Heating control apparatus and heating control method for semiconductor device

Abstract

The invention provides a heating control device and a heating control method of semiconductor equipment, the heating control device of the semiconductor equipment comprises a heating layer, the heating layer is provided with a plurality of sub-heating circuits connected in series, each sub-heating circuit comprises a first circuit formed by connecting a heating element and a temperature protection element in series, the heating control device comprises a first circuit comprising a temperature protection part and a second circuit comprising an on-off control part, the first circuit and the second circuit are arranged in parallel, the temperature protection part is configured to be closed or opened in response to the sensed temperature so as to control the on-off state of the first circuit, and when the temperature protection part of the first circuit is opened in response to the sensed temperature, the heating control device controls the on-off state of the first circuit. The second circuit where the on-off control piece is located and the first circuit in the adjacent sub-heating circuits form a current path, so that normal heating of the other sub-heating circuits on the corresponding heating area cannot be affected due to disconnection of the first circuit of any sub-heating circuit, and adverse effects on the temperature controlled device due to abnormal heating are reduced or avoided.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor equipment, and more specifically, relates to a heating control device and a heating control method for semiconductor equipment. Background Art

[0002] Temperature controlled devices of semiconductor equipment, such as gas pipelines used to transport reaction sources, need to keep the reaction sources at a certain temperature during the reaction source transportation process to meet process requirements, or substances in the exhaust pipeline are easily deposited in the pipeline during the discharge process, or the cavity needs to be kept warm. Therefore, it is necessary to monitor and control the temperature of these temperature controlled devices.

[0003] In the prior art, since the controlled area of ​​the temperature-controlled device of the semiconductor equipment either extends over a long length (such as an air intake pipe or an exhaust pipe) or has a large surface area (such as the outer wall of a cavity that needs to be temperature-controlled), in order to improve the temperature control efficiency, the method for temperature monitoring and controlling the temperature of the above-mentioned temperature-controlled device is generally to set a heating circuit including a plurality of heating elements (such as resistance wires) connected in series in a sleeve covering these temperature-controlled devices, and control the heating elements to generate heat to achieve heating of the temperature-controlled devices.

[0004] Since the heating elements are connected in series, if one heating element malfunctions, such as heating the heated area causing abnormal local temperature rise, in order to prevent the abnormal temperature rise from adversely affecting the material in the temperature-controlled device, the current of the heating element will be controlled to be interrupted, but the control of interrupting the output current will stop all heating elements from heating. If maintenance is not carried out in time in this case, the rapidly cooled pipe will have a great impact on the state of the material in the temperature-controlled device, such as the rapid cooling of the reaction source in the intake pipe, the condensation of the material in the exhaust pipe, or the poor thermal insulation performance of the cavity, which will seriously affect the normal operation of the process carried out in the semiconductor equipment. Summary of the invention

[0005] The object of the present invention is to provide a heating control device and a heating control method for semiconductor equipment, so as to reduce or avoid the adverse effects of abnormal heating on the temperature controlled device in the event of abnormal heating.

[0006] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is: In a first aspect, the present invention provides a heating control device for semiconductor equipment, comprising: A heating layer, the heating layer is used to be sleeved on the temperature controlled device of the semiconductor device; the heating layer is provided with a plurality of sub-heating circuits connected in series, each of the sub-heating circuits includes a first circuit formed by a heating element and a temperature protection element connected in series, and a second circuit including an on-off control element, the first circuit and the second circuit are arranged in parallel; The temperature protection element is configured to close or open in response to the sensed temperature to control the on / off state of the first circuit; When each of the on-off control elements is in an off state, each of the first circuits forms a current path connected in series; When at least one of the on-off control elements is in a closed state, the second circuit where the on-off control element is located and the first circuit in the adjacent sub-heating circuit form a current path.

[0007] Furthermore, the heating layer includes a main heating layer and a protective layer which are sequentially arranged from the inside to the outside, each of the heating elements is located in the main heating layer, each of the temperature protection elements and each of the on-off control elements are located in the protective layer, and the heating elements and the temperature protection elements of the same sub-heating circuit are separated by at least part of the main heating layer and / or at least part of the protective layer.

[0008] Further, the heating element and the temperature protection element are arranged on the same side of the circumferential direction of the temperature-controlled device, and the heating element and the temperature protection element are staggered; or, the heating element and the temperature protection element are respectively arranged on opposite sides of the circumferential direction of the temperature-controlled device.

[0009] Further, the first circuit includes a first lead-in wire electrically connected to the heating element, a first intermediate wire electrically connected to the heating element and the temperature protection element, and a first lead-out wire electrically connected to the temperature protection element to realize the series connection of the heating element and the temperature protection element, and the second circuit includes a second lead-in wire and a second lead-out wire electrically connected to the on-off control element, the first lead-out wire and the second lead-out wire intersect to form a second intermediate wire located between the temperature protection element and the on-off control element, and the first lead-in wire and the second lead-in wire of adjacent first circuits are electrically connected to the second intermediate wire respectively.

[0010] Furthermore, the heating control device also includes a control module, which is electrically connected to the input wire and the output wire of the control module. The number of the sub-heating circuits is N, where N is a positive integer greater than or equal to 2. The first lead-in wire and the second lead-in wire of the first sub-heating circuit are electrically connected to the input wire respectively, and the second intermediate wire of the Nth sub-heating circuit is electrically connected to the lead-out wire.

[0011] Furthermore, each of the sub-heating circuits is arranged sequentially along a first direction. In the sub-heating circuit, the first intermediate wire is electrically connected to the heating element and then extends a preset length along the first direction, then extends a predetermined length along a second direction opposite to the first direction, and then is electrically connected to the temperature protection element.

[0012] Furthermore, the heating element includes a heating resistor, the temperature protection element includes a temperature control switch, and the on-off control element includes a jump switch.

[0013] Furthermore, the temperature control switch and the on-off switch are interlocked.

[0014] Furthermore, the heating control device also includes a temperature measuring layer and a heat-insulating layer which are sequentially sleeved outside the heating layer, the temperature measuring layer includes at least one temperature measuring element, the heat-insulating layer includes a glass fiber fabric with a pore structure, and the glass fiber fabric with a pore structure includes glass fiber needle-punched felt, each of the temperature measuring elements is arranged in a one-to-one correspondence with each of the sub-heating circuits, or the number of the temperature measuring elements is less than the number of the sub-heating circuits.

[0015] Furthermore, each of the on-off control components is electrically connected to the control module.

[0016] Furthermore, it also includes a dielectric insulation layer, the main heating layer is sleeved outside the dielectric insulation layer, the dielectric insulation layer is configured to allow the heat generated by the heating element to pass through and produce a heating effect on the temperature-controlled device of the semiconductor equipment, and the dielectric insulation layer is provided with at least one leak detection device.

[0017] Further, the medium insulation layer includes an insulation sleeve and a medium contained in the insulation sleeve, the medium includes water, heat transfer oil or liquid metal; or the medium insulation layer includes a vacuum sleeve, a heat radiation element arranged in the vacuum sleeve, and a functional circuit sealed and electrically connected to the vacuum sleeve and electrically connected to the heat radiation element, so that the heat radiation element is driven by the functional circuit to form heat radiation, and the heat radiation element includes a nickel-chromium alloy element or a tungsten element.

[0018] A second aspect of the present invention provides a heating control method for semiconductor equipment, which is applied to a temperature-controlled device of a semiconductor equipment, wherein the temperature-controlled device of the semiconductor equipment is provided with a heating control device, wherein the heating control device comprises a heating layer, wherein the heating layer is sleeved on the temperature-controlled device of the semiconductor equipment; wherein the heating layer is provided with a plurality of sub-heating circuits connected in series, wherein each of the sub-heating circuits comprises a first circuit formed by a heating element and a temperature protection element connected in series, and a second circuit comprising an on-off control element, wherein the first circuit and the second circuit are arranged in parallel; wherein the temperature protection element is configured to turn on or off the first circuit in response to a sensed temperature; and wherein the heating control method comprises: S1: Control each of the temperature protection components to be in a closed state to turn on each of the first circuits, control each of the on-off control components to be in an open state, and control each of the heating components of the first circuits to heat the temperature-controlled device; S2: determining that the temperature of the area where at least one of the sub-heating circuits is located is abnormal; S3: Control the on-off control element in the temperature abnormality area to be in a closed state, so that the second circuit where the on-off control element is located is connected to the first circuit of the adjacent sub-heating circuit.

[0019] Furthermore, the heating control device further comprises at least one temperature measuring element, and one of the temperature measuring elements is arranged in the area where the M sub-heating circuits are connected in series. In the step S2, the step of judging the temperature abnormality in the area where at least one of the sub-heating circuits is located comprises judging that the measured temperature in the area where the M sub-heating circuits are located is higher than the preset comparison temperature and becomes an over-temperature area through the measured temperature information fed back by the temperature measuring element, and judging that each of the temperature protection elements in the M sub-heating circuits is in a closed state; In step S3, the step of controlling the on-off control element in the temperature abnormality area to be in a closed state includes controlling one of the M on-off control elements to be in a closed state, where M is a positive integer greater than or equal to 2; After step S3 is completed, the following steps are performed: S4: After a preset interval time period, it is determined that the temperature of the area where the M sub-heating circuits are located is higher than the preset comparison temperature through the temperature information fed back by the temperature measuring component: S5: Control the on-off control component in the closed state to be in the open state or the closed state to complete the on-off debugging, and then perform the on-off debugging on at least part of the remaining on-off control components respectively, until it is determined through the temperature information fed back by the temperature measuring component that the measured temperature of the area where the M sub-heating circuits are located is not higher than the preset comparison temperature.

[0020] Further, in step S4, after a preset interval time period, the temperature information fed back by the temperature measuring component is used to determine that the measured temperature of the area where the M sub-heating circuits are located is not lower than the measured temperature of the area where the M sub-heating circuits are located obtained in step S2, and step S5 includes: S51: after controlling the on-off control element in the closed state to be in the open state to complete the on-off debugging, controlling one of the remaining on-off control elements that has not been debugged to be in the closed state; S52: Repeat step S51 to complete the on-off debugging of at least two on-off control components in the M sub-heating circuits.

[0021] Further, in step S4, after a preset interval time period, it is determined through the temperature information fed back by the temperature measuring component that the measured temperature of the area where the M sub-heating circuits are located is lower than the measured temperature of the area where the M sub-heating circuits are located obtained in step S2, and is higher than the preset comparison temperature, and step S5 includes: S51: after controlling the on-off control element in the closed state to remain in the closed state to complete the on-off debugging, controlling one of the remaining on-off control elements that has not undergone the on-off debugging to be in the closed state; S52: Repeat step S51 to complete the on-off debugging of at least two on-off control components.

[0022] Furthermore, in step S2, the step of determining that the temperature of at least one area where the first circuit is located is abnormal includes determining that the temperature of the area where the corresponding temperature protection component is located is abnormal after determining that the corresponding temperature protection component is in an open state based on feedback information from at least one of the temperature protection components.

[0023] The heating control device of the semiconductor device provided by the present invention comprises a heating layer, the heating layer is used to be set on the temperature controlled device of the semiconductor device, the heating layer is provided with a plurality of sub-heating circuits connected in series, each of the sub-heating circuits comprises a first circuit formed by a heating element and a temperature protection element connected in series, and a second circuit comprising an on-off control element, the first circuit and the second circuit are arranged in parallel, the temperature protection element is configured to close or open in response to the sensed temperature to control the on-off state of the first circuit, when each of the on-off control elements is in an off state, each of the first circuits constitutes a current path connected in series, when at least one of the on-off control elements is in a closed state, the second circuit where the on-off control element is located and the first circuit in the adjacent sub-heating circuit constitute a current path. In the heating control device, when the temperature protection element of the first circuit is opened in response to the sensed temperature, the second circuit where the on-off control element is located and the first circuit in the adjacent sub-heating circuit constitute a current path, so that the normal heating of the corresponding heating area by other sub-heating circuits will not be affected by the disconnection of the first circuit of the sub-heating circuit, thereby reducing or avoiding the adverse effects of abnormal heating on the temperature controlled device. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0025] Figure 1 A schematic diagram of a planar unfolding structure of a heating control device for semiconductor equipment provided by an embodiment of the present invention; the planar unfolding refers to a structure obtained by cutting apart the side walls of each layer along the axial direction and then unfolding them in sequence; Figure 2 A schematic diagram of a structure in which a plurality of sub-heating circuits are connected in series in a temperature control device for a semiconductor device provided by an embodiment of the present invention; Figure 3 A schematic diagram of a relative position relationship between a heating element and a temperature response element in a sub-heating circuit of a semiconductor device provided by an embodiment of the present invention and a main heating layer and a protective layer; Figure 4 A schematic diagram of another relative position relationship between a heating element and a temperature response element in a sub-heating circuit of a semiconductor device provided by an embodiment of the present invention and a main heating layer and a protective layer; Figure 5 A schematic structural diagram of a sub-heating circuit of a heating control device for semiconductor equipment provided by an embodiment of the present invention.

[0026] Among them, the reference numerals in the figure are: 1-heating layer; 2-temperature controlled device; 3-contact layer; 4-temperature measuring layer; 5-insulating layer; 6-protective layer; 7-medium insulating layer; 11-sub-heating circuit; 12-main heating layer; 13-protective layer; 41-temperature measuring element; 71-leakage-proof layer; 72-leakage detection device; 101-first lead-in wire; 102-first intermediate wire; 103-first lead-out wire; 104-second lead-in wire; 105-second lead-out wire; 106-second intermediate wire; 107-input wire; 108-output wire; 111-heating element; 112-temperature protection element; 113-on-off control element; 114-fuse device. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0028] In the description of the present invention, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0029] It should be understood that the orientation or position relationship indicated by terms such as "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0030] Furthermore, in the description of the present invention, unless otherwise specified, “plurality” means two or more.

[0031] The heating control device and heating control method for semiconductor equipment provided by the present invention are described in detail below in conjunction with specific embodiments.

[0032] See also Figure 1 to Figure 2 A first aspect of an embodiment of the present invention provides a heating control device for a semiconductor device, comprising a heating layer 1, wherein the heating layer 1 is used to be mounted on a temperature-controlled device 2 of the semiconductor device; the heating layer 1 is provided with a plurality of sub-heating circuits 11 connected in series.

[0033] Each of the sub-heating circuits 11 includes a first circuit formed by a heating element 111 and a temperature protection element 112 connected in series, and a second circuit including an on-off control element 113, and the first circuit and the second circuit are arranged in parallel; the temperature protection element 112 is configured to close or open in response to the sensed temperature to control the on-off state of the first circuit.

[0034] The temperature controlled device 2 of this embodiment is not limited to a pipeline, but may also be a cavity whose internal temperature needs to be controlled, such as a process cavity.

[0035] In some embodiments, a plurality of heating circuits 11 are sequentially arranged in series along the axial direction of the pipeline, wherein the heating element 111 of the sub-heating circuit 11 is used to generate heat to heat the temperature-controlled device 2 .

[0036] Take the temperature controlled device 2 as an example of a pipeline for explanation: the vapor deposition reaction in the MOCVD semiconductor device requires that the incoming reaction source gas be in a gaseous state, and some substances used as reaction source gases, such as trimethyl gallium which is liquid at normal pressure, need to be vaporized at a certain temperature and pressure and have a stable vapor pressure, and then enter the air intake pipeline under the carrier gas (such as hydrogen or nitrogen). Therefore, it is necessary to maintain a certain temperature and pressure in the air intake pipeline to ensure that the reaction source gas is in a gaseous state during the transportation process. The air intake pipeline for transporting the reaction source gas serves as the temperature controlled device of the semiconductor device in this embodiment.

[0037] In the initial state, each on-off control element 113 is in an off state, and each temperature protection element 112 is in a closed state. In the process of controlling each heating element 111 to generate heat to heat the temperature-controlled device 2, under normal heating control, the temperature of the area where the corresponding temperature protection element 112 is located rises until it reaches the equilibrium temperature (for example, the temperature range is T ~ T'), and each temperature protection element 112 is selected so that the preset temperature threshold is lower than T' and is in a closed state, and each first circuit is in a conducting state. When the temperature of the area where the temperature protection element 112 senses is higher than T', it is in an open state, so that the first circuit where it is located is in a disconnected state.

[0038] If the temperature sensed by a temperature protection component 112 exceeds its preset temperature threshold, it means that the area where the temperature protection component 112 is located becomes an over-temperature area, and the temperature rises abnormally. The temperature protection component 112 will be disconnected, so that the first circuit where it is located is disconnected. If the second circuits are not provided, but the first circuits are connected in series, for example Figure 1 After the first circuit at the far left is disconnected, even if the temperature protection components 112 in the other first circuits except the first circuit are in the closed state, the current of the heating control cannot flow through the heating elements of the subsequent first circuits so that each heating element stops heating. In this case, the temperature abnormality in one area causes the temperature control of the entire temperature-controlled device to fail. If the over-temperature problem of the over-temperature area is not improved in time, for example, the technical personnel intervene for a long time for maintenance, the temperature-controlled device with rapid cooling will have a great impact on the state of the substances in the temperature-controlled device, such as the rapid cooling of the reaction source in the intake pipe, the condensation of the substances in the exhaust pipe in the pipe, or the poor thermal insulation performance of the cavity, all of which will seriously affect the normal operation of the process carried out in the semiconductor equipment.

[0039] Therefore, the present embodiment also provides a second circuit connected in parallel with the first circuit and including an on-off control element. In the initial state, the on-off control element 113 of each second circuit is in an off state, and each first circuit constitutes a current path connected in series. By controlling the current path, the heating current flows through the current path to make each heating element 111 generate heat, thereby achieving heating of the temperature-controlled device. When the temperature protection element 112 of the sub-heating circuit 11 senses the abnormal temperature and opens to disconnect the first circuit, the on-off control element 113 of the second circuit in the sub-heating circuit 11 is controlled to close so that the second circuit in which it is located forms a current path with the first circuit in the adjacent sub-heating circuit, so that the normal heating of the temperature-controlled device 2 by other sub-heating circuits 11 will not be affected by the disconnection of the temperature protection element 112 of the sub-heating circuit 11.

[0040] In this embodiment, after the temperature sensed by the temperature protection element 112 is lower than its preset temperature threshold, the temperature control switch is closed, and at this time the first circuit is in a conducting state.

[0041] Exemplarily, the heating element 111 is a heating resistor, and the temperature protection element 112 is a temperature control switch. In some more specific embodiments, the temperature control switch is a self-resetting temperature control switch.

[0042] In some embodiments, the temperature control switch may also be a manual reset temperature control switch.

[0043] In some embodiments, the on / off control element 113 is a jump switch.

[0044] The inner side of the heating layer 1 of this embodiment is provided with a contact layer 3, and the material of the contact layer 3 can be aluminum foil composite glass cloth. By providing the contact layer 3 on the inner side of the heating layer 1 in direct contact with the outer wall of the pipeline, heat transfer can be promoted and heat transfer resistance can be reduced. The aluminum foil composite glass fiber cloth has better tensile strength and surface stiffness, which is convenient for close fitting with the heating pipeline, and the aluminum foil material can reflect part of the heat emitted by the pipeline.

[0045] In some embodiments, the temperature protection element 112 is configured to close or open in response to the sensed temperature to control the on / off state of the first circuit, and the temperature protection element 112 of the same sub-heating circuit is interlocked with the on / off control element 113. Exemplarily, in the same sub-heating circuit, the temperature protection element 112 opens to disconnect the first circuit after sensing that the temperature exceeds its preset temperature threshold, and the on / off control element 113 of the second circuit is in a closed state, so that the second circuit where the on / off control element 113 is located forms a current path with the first circuit in the adjacent sub-heating circuit; when the temperature protection element 112 senses that the temperature is not higher than its preset temperature threshold and closes to reopen the first circuit, the on / off control element 113 of the second circuit is opened, so that the first circuit of the sub-heating circuit can form a current path connected in series with the first circuit of the adjacent sub-heating circuit.

[0046] See also Figure 1 , Figure 3 , Figure 4 The heating layer 1 includes a main heating layer 12 and a protective layer 13 which are sequentially arranged from the inside to the outside, each heating element 111 is located in the main heating layer 12, and each temperature protection element 112 and each on-off control element 113 are located in the protective layer 13.

[0047] In some embodiments, the heating element 111 and the temperature protection element 112 of the same sub-heating circuit 11 are separated by at least a portion of the main heating layer 12 and / or at least a portion of the protection layer 13. The heating element 111 and the temperature protection element 112 of the heating control device are separated by at least a portion of the main heating layer 12 and / or at least a portion of the protection layer 13, which reduces or avoids the heating element 111 and the temperature protection element 112 in the same sub-heating circuit 11 being too close to each other, so that the heating element 111 has an adverse effect on the temperature response sensitivity of the temperature protection element 112.

[0048] In order to further reduce or avoid the adverse effect of the heating element 111 on the temperature response sensitivity of the temperature protection element 112 due to the heating element 111 and the temperature protection element 112 in the same sub-heating circuit 11 being too close, please refer to Figure 3 : In some embodiments, in the same sub-heating circuit 11, the heating element 111 and the temperature protection element 112 are arranged on the same side of the temperature controlled device 2 in the circumferential direction, and the heating element 111 and the temperature protection element 112 are arranged in a staggered manner. The heating element 111 and the temperature protection element 112 are arranged on the same side of the temperature controlled device 2 in the circumferential direction, which means that the connecting line of the heating element 111 and the temperature protection element 112 does not pass through the center of the circle in the circumferential direction. Please refer to Figure 4 In some embodiments, the heating element 111 and the temperature protection element 112 are arranged on opposite sides of the temperature controlled device 2 in the circumferential direction. Specifically, the connecting line of the heating element 111 and the temperature protection element 112 passes through the center of the circle in the circumferential direction, and this arrangement further increases the spacing between the heating element 111 and the temperature protection element 112 in the circumferential direction.

[0049] In this embodiment, please refer to Figure 2 A plurality of sub-heating circuits 11 connected in series are arranged in sequence along the axial direction of the temperature controlled device 2, wherein there is a certain interval between the first circuits of adjacent sub-heating circuits, and there is also a certain interval between the second circuits of adjacent sub-heating circuits.

[0050] The spacing between adjacent sub-heating circuits is reasonably adjusted according to heating requirements, so that the temperature controlled device 2 can be heated in different zones. In some specific embodiments, the heating elements 111 of each sub-heating circuit 11 are arranged in sequence along the same axis of the temperature controlled device 2 .

[0051] In one specific embodiment, see Figure 5The first circuit includes the heating element 111, a first lead-in wire 101 electrically connected to the heating element 111, the temperature protection element 112, a first intermediate wire 102 electrically connected to the heating element 111 and the temperature protection element 112, and a first lead-out wire 103 electrically connected to the temperature protection element 112, so as to realize the series connection of the heating element 111 and the temperature protection element 112 through the first intermediate wire 102. The second circuit includes an on-off control element 113, a second lead-in wire 104 electrically connected to the on-off control element 113, and a second lead-out wire 105, the first lead-out wire 103 and the second lead-out wire 105 intersect to form a second intermediate wire 106 located between the temperature protection element and the on-off control element.

[0052] In a specific embodiment, in two adjacent first circuits, the first lead-in conductor 101 and the second lead-in conductor 104 of one first circuit are respectively electrically connected to the second intermediate conductor 106 of the other first circuit, so that the first circuit including the first lead-in conductor 101, the heating element 111, the first intermediate conductor 102, the temperature protection element 112 and the first lead-out conductor 103 is arranged in parallel with the second circuit including the second lead-in conductor 104, the on-off control element 113 and the second lead-out conductor 105.

[0053] In a specific embodiment, the heating control device further comprises a control module, and an input wire and an output wire of the control module are electrically connected. Figure 2 and Figure 5 The first lead-in wire 101 and the second lead-in wire 104 of the first sub-heating circuit are electrically connected to the input wire 107, respectively, and the second intermediate wire 106 of the Nth sub-heating circuit is electrically connected to the output wire 108. The input wire 107 and the output wire 108 are connected to a control module (not shown in the figure).

[0054] The control module of this embodiment controls the heating of the heating element 111, for example, provides current to the heating element 111, and the current generates heat after flowing through the heating element 111 with resistance, so that the heating control device of the semiconductor device can control the temperature of the temperature-controlled device 2. In some specific embodiments, the control module is a host computer, a PLC and a PSU (Power Supply Unit) that are electrically connected in sequence, the PLC performs conversion and transmission of the control instructions of the host computer, and the PSU responds to the converted control instructions to perform power control and output current.

[0055] In some embodiments, the number of the sub-heating circuits is N, where N is a positive integer greater than or equal to 2. The N sub-heating circuits are connected in series in sequence, the first lead-in wire 101 and the second lead-in wire 104 of the first sub-heating circuit are electrically connected to the input wire respectively, and the second intermediate wire 106 of the Nth sub-heating circuit is electrically connected to the output wire.

[0056] In some embodiments, each of the sub-heating circuits 11 is arranged sequentially along a first direction, and the first intermediate conductor 102 is electrically connected to the heating element 111, and then extends a preset length along the first direction, and then extends a predetermined length along a second direction opposite to the first direction, and then is electrically connected to the temperature protection element 112. The heating layer 1 of this embodiment is surrounded by a hollow cylinder, and the first intermediate conductor 102 extends a certain length toward one end of the hollow cylinder, and then extends a certain length toward the other end of the hollow cylinder, and then is electrically connected to the temperature protection element 112. After the first intermediate conductor 102 of this embodiment is connected to the heating element 111, it extends a certain length toward one end of the hollow cylinder, and then extends a certain length toward the other end of the hollow cylinder, and then is electrically connected to the temperature protection element 112, so that a connection is formed between the heating element 111 and the temperature protection element 112. Figure 2 The reciprocating fold line structure shown facilitates flexible adjustment of the spacing between the heating element 111 and the temperature protection element 112, and also makes the layout of each sub-heating circuit 11 compact, and can adjust the proximity between adjacent heating elements 111 as much as possible, and set more heating elements 111 to perform fine temperature control of the temperature-controlled device.

[0057] In one specific embodiment, see Figure 1 , and also includes a temperature measuring layer 4 and a heat-insulating layer 5 which are sequentially sleeved outside the heating layer 1, the temperature measuring layer 4 includes at least one temperature measuring element 41, the heat-insulating layer 5 includes a glass fiber fabric with a pore structure, and the glass fiber fabric with a pore structure includes glass fiber needle felt, each of the temperature measuring elements 41 is arranged in a one-to-one correspondence with each of the sub-heating circuits 11, or the number of the temperature measuring elements 41 is less than the number of the sub-heating circuits 11.

[0058] The temperature measuring layer 4 of this embodiment is used to measure the temperature of the area where the corresponding heating element 111 is located. By measuring the temperature of the area where the corresponding heating element 111 is located, the temperature of the corresponding area of ​​the temperature-controlled device 2 of the semiconductor device can be obtained according to the pre-stored corresponding relationship. The temperature measuring layer 4 of this embodiment is provided with a temperature measuring element 41. The temperature obtained by the temperature measuring element 41 in this embodiment can realize real-time monitoring of the operating temperature of the temperature-controlled device 2 of the semiconductor device, timely discover temperature abnormalities, eliminate safety operation hazards caused by overheating, and avoid economic losses caused thereby. The temperature measuring element 41 of this embodiment can be a thermocouple, which has high measurement accuracy, a wide temperature measurement range, simple operation and high stability.

[0059] In this embodiment, the thermal insulation layer 5 is used to keep the temperature controlled device 2 warm. The thermal insulation layer 5 of this embodiment is composed of a material with a relatively low thermal conductivity. The material with a relatively low thermal conductivity has good thermal insulation performance and can effectively prevent heat transfer. In this embodiment, by providing the thermal insulation layer 5, the heat loss of the gas phase medium in the pipeline during the transportation process can be reduced, thereby saving energy and improving the economy of the system operation. In addition, a protective layer 6 is usually provided on the outer layer of the thermal insulation layer 5 to protect the thermal insulation layer 5 from external mechanical damage and moisture erosion.

[0060] The thermal insulation layer 5 of this embodiment is a glass fiber fabric with a porous structure, and the glass fiber fabric with a porous structure includes glass fiber needle felt. Glass fiber needle felt has a low heat transfer coefficient and has very good thermal insulation and heat resistance. Glass fiber needle felt has thousands of tiny air pockets and irregular fiber layout, which can reduce energy outflow.

[0061] In a specific embodiment, each of the on-off control elements 113 is electrically connected to the control module, and the control module controls the closing and opening of each of the on-off control elements 113 , thereby controlling the conduction and disconnection of the corresponding second circuit.

[0062] In a specific embodiment, the control module Figure 2 The input wire 107, the output wire 108 and the wires of the first circuit shown electrically connect each temperature protection element 112 to the control module. When each temperature protection element 112 automatically closes or opens in response to the sensed temperature, for example, it is a self-resetting temperature control switch. The temperature protection element 112 can send its status information to the control module for the control module to determine whether it is in a closed state or an open state.

[0063] In some embodiments, reference Figure 1 The input wire of the heating circuit 1 is provided with a fuse device 114, which is blown in the case of an internal short circuit overload to protect the heating elements and the temperature response elements in the heating circuit. The fuse device 114 can be a fuse.

[0064] See also Figure 1 In a specific embodiment, the heating control device of the semiconductor equipment also includes a dielectric insulation layer 7, the main heating layer 12 is sleeved outside the dielectric insulation layer 7, the dielectric insulation layer 7 is configured to allow the heat generated by the heating element to pass through and produce a heating effect on the temperature-controlled device 2 of the semiconductor equipment, and the dielectric insulation layer 7 is provided with at least one leak detection device 71.

[0065] The dielectric insulation layer 7 of this embodiment is arranged on the outside of the contact layer 3 of the outer wall of the temperature controlled device 2 of the semiconductor equipment. The dielectric insulation layer 7 can still keep the temperature controlled device 2 warm when an emergency occurs in the heating circuit, such as when heating is stopped, to avoid adverse effects on the temperature controlled device 2 due to excessive temperature loss.

[0066] The medium insulation layer 7 includes an insulation sleeve and a heat medium contained in the insulation sleeve, and the heat medium includes water, heat transfer oil or liquid metal with a certain temperature. The specific heat capacity of water is large, and it can effectively absorb heat when the heating circuit is heated, and can effectively release heat when the heating circuit stops heating, so as to maintain the stability of the temperature in the temperature-controlled device 2. Thermal oil has better thermal stability than water, less coking, and longer service life. In addition, the vapor pressure of thermal oil is not high, the evaporation loss is small, and it will not catch fire and burn within the allowable temperature range and in a sealed state, so it is safer. Thermal oil also has the characteristics of low toxicity and tastelessness, and the pollution to the environment is very small, and it will not corrode equipment like medium water. Liquid metal has excellent thermal conductivity and specific heat capacity.

[0067] Since the dielectric insulation layer 7 contains flowing medium, in some embodiments, a leak-proof layer 71 is provided between the dielectric insulation layer 7 and the main heating layer 12, and the leak-proof layer 71 is provided with a leak detection device 72 to facilitate timely monitoring of leakage of the dielectric insulation layer 7 and further prevent the normal operation of the heating circuit from being affected by leakage.

[0068] In a specific embodiment, the dielectric insulation layer 7 includes a vacuum sleeve, a heat radiation element arranged in the vacuum sleeve, and a functional circuit sealed and electrically connected to the vacuum sleeve, so as to drive the heat radiation element to form heat radiation through the functional circuit, thereby achieving insulation of the temperature controlled device 2. Optionally, the heat radiation element includes a nickel-chromium alloy element or a tungsten element. The nickel-chromium alloy element can be a nickel-chromium alloy wire, and the tungsten element can be a tungsten wire. The heating working principle of the nickel-chromium alloy or tungsten wire is that resistance heat is generated when current passes through the resistance material. The nickel-chromium alloy has a high resistivity. When current passes through, more heat is generated, thereby achieving a heating effect. The resistance temperature coefficient of the tungsten wire is large, and the resistivity increases significantly with the increase of temperature. The heat radiation element is arranged in the vacuum sleeve of the dielectric insulation layer 7, which can provide stable and efficient heat energy conversion and heat dissipation effects. The nickel-chromium alloy element or tungsten element of this embodiment is located in the vacuum sleeve, so that the insulation effect is more durable.

[0069] A second aspect of an embodiment of the present invention provides a heating control method for semiconductor equipment, which is applied to a temperature-controlled device of semiconductor equipment. The heating control method includes the following steps S1, S2 and S3.

[0070] The step S1 includes controlling each of the temperature protection components to be in a closed state to turn on each of the first circuits, controlling each of the on-off control components to be in an open state, and controlling each of the heating components of the first circuits to heat the temperature-controlled device.

[0071] In step S1 of some specific embodiments, current is provided to each sub-heating circuit 11 through the control module via the input wire 107. Since each of the temperature protection components 112 is in a closed state and each of the on-off control components 113 is in an open state in the initial state, current flows through each of the first circuits in sequence and causes each of the heating components 111 to generate heat, thereby achieving heating of the temperature-controlled device.

[0072] The step S2 includes determining whether the temperature of the area where at least one of the sub-heating circuits is located is abnormal.

[0073] In step S2 of some embodiments, the step of determining whether the temperature in the area where at least one of the sub-heating circuits is located is abnormal includes determining whether the temperature in the area where the corresponding temperature protection component is located is abnormal after determining that the corresponding temperature protection component is in an open state based on feedback information from at least one of the temperature protection components.

[0074] In step S2 of some specific embodiments, when a heating element 111 generates abnormal heat, the corresponding temperature protection element 112 (i.e., the temperature protection element 112 provided in the same sub-heating circuit as the heating element 111) responds to the sensed temperature exceeding its preset temperature threshold. The temperature protection element 112 automatically disconnects and sends disconnection status information to the control module. The control module determines that the temperature in the area of ​​the sub-heating circuit where the temperature protection element 112 is located is abnormal based on the received disconnection status information.

[0075] The step S3 includes controlling the on-off control element where the temperature abnormality area is located to be in a closed state, so that the second circuit where the on-off control element is located is connected to the first circuit of the adjacent sub-heating circuit.

[0076] In step S3 of some specific embodiments, the temperature protection component and the on-off control component of the same sub-heating circuit are interlocked. Specifically, after the control module determines that the temperature in the area of ​​the sub-heating circuit where the temperature protection component 112 is located is abnormal through the received disconnection state information, the control module controls the on-off control component 113 corresponding to the temperature protection component 112 (that is, the on-off control component 113 provided in the same sub-heating circuit as the temperature protection component 112) to be closed. After the temperature sensed by the temperature protection component 112 exceeds its preset temperature threshold, the temperature protection component 112 opens, and the first circuit where it is located is in the disconnected state. Since the on-off control components in the other sub-heating circuits connected in series with the sub-heating circuit where the first circuit is located are all in the disconnected state, the current cannot flow to the first circuits of the other sub-heating circuits through the first circuit in the disconnected state. If the maintenance of the first circuit in the disconnected state is not intervened in time, the temperature control of the entire temperature-controlled device will fail. Therefore, the control module controls the on-off control component 113 in the sub-heating circuit in the temperature abnormality area to be closed, so that the second circuit where the on-off control component 113 is located is turned on, and the second circuit is connected to the first circuit of the adjacent sub-heating circuit, and also to the second circuit of the adjacent sub-heating circuit. Since the second circuits of the adjacent sub-heating circuit and other sub-heating circuits are disconnected, the first circuits are interconnected, so that the current can be transmitted to the first circuits of other sub-heating circuits through the second circuit in the sub-heating circuit in the temperature abnormality area, thereby not affecting the heating effect of other sub-heating circuits on the corresponding area.

[0077] In step S3 of some specific embodiments, the control module determines that there are at least two areas with abnormal temperatures based on the disconnection information of the received temperature protection element, and the control module controls the on-off control element of the neutron heating circuit in each area with abnormal temperature to be turned on.

[0078] In a specific embodiment, the heating control device further comprises at least one temperature measuring element. In a more specific embodiment, each temperature measuring element is arranged in a one-to-one correspondence with the area where each sub-heating circuit is located. Specifically, the control module is electrically connected to each temperature measuring element to obtain measured temperature information.

[0079] When the first circuit of a certain area stops heating the area, or the heating abnormality becomes an over-temperature area, the temperature of the area will not drop or rise significantly immediately, and the control module is electrically connected to the temperature protection element of the area and will receive its status information in real time. Therefore, for the safety of the temperature control process, after receiving the disconnection information of the temperature protection element, the control module controls the on-off control element set in a sub-heating unit corresponding to the temperature protection element to close.

[0080] In some embodiments, the control module determines that the measured temperature of the area where the sub-heating circuit is located is higher than the preset comparison temperature and becomes an over-temperature area through the measured temperature information fed back by each of the temperature measuring components, and the control module controls the on-off control component in the sub-heating circuit to close. In particular, when the control module determines that the temperature protection component is in a closed state based on the information received from the temperature protection component, and determines that the area becomes an over-temperature area based on the measured temperature information fed back by the temperature measuring component in the area, in this case, it may be that the temperature protection component fails abnormally or has abnormal sensitivity and does not respond or does not respond in time to disconnect the first circuit. If the temperature abnormality information is not obtained through the temperature measuring component, this over-temperature situation will become more and more obvious.

[0081] In some embodiments, the number of temperature measuring elements is less than the number of sub-heating circuits, that is, one temperature measuring element is used to monitor the working conditions of M sub-heating circuits, where M is a positive integer greater than or equal to 2.

[0082] In some embodiments, one temperature measuring element is preferably arranged corresponding to the area where two or three sub-heating circuits are located.

[0083] In step S2 of some embodiments, a temperature measuring component is arranged in the area where the M sub-heating circuits are connected in series, and the step of judging the temperature abnormality in the area where at least one sub-heating circuit is located includes judging that the measured temperature in the area where the M sub-heating circuits are located is higher than the preset comparison temperature and becomes an over-temperature area through the measured temperature information fed back by the temperature measuring component, and judging that each of the temperature protection components in the M sub-heating circuits is in a closed state. In step S3, one of the M on-off control components is controlled to be in a closed state. Further, the following steps are performed: S4: After a preset interval time period, it is determined that the temperature of the area where the M sub-heating circuits are located is higher than the preset comparison temperature through the temperature information fed back by the temperature measuring component: S5: Control the on-off control component in the closed state to be in the open state or the closed state to complete the on-off debugging, and then perform the on-off debugging on at least part of the remaining on-off control components respectively, until it is determined through the temperature information fed back by the temperature measuring component that the measured temperature of the area where the M sub-heating circuits are located is not higher than the preset comparison temperature.

[0084] In one embodiment, in step S4, after a preset interval time period, it is determined through the temperature information fed back by the temperature measuring component that the measured temperature of the area where the M sub-heating circuits are located is not lower than the measured temperature of the area where the M sub-heating circuits are located obtained in step S2, and step S5 includes: S51: after controlling the on-off control element in the closed state to be in the open state to complete the on-off debugging, controlling one of the remaining on-off control elements that has not been debugged to be in the closed state; S52: Repeat step S51 to complete the on-off debugging of at least two on-off control components in the M sub-heating circuits.

[0085] In step S3, one of the M on-off control components corresponding to the over-temperature area is controlled to be in a closed state, and through step S4, after a preset interval time period, it is determined that the measured temperature of the area where the M sub-heating circuits are located is not lower than the measured temperature of the area where the M sub-heating circuits are located obtained in step S2, indicating that the over-temperature area is not the area where the sub-heating circuit where the on-off control component in the closed state in S5 is located, and the heating element in the first circuit corresponding to the sub-heating circuit is generating heat normally, so it is necessary to control the on-off control component to be in an off state through step S51, so that the heating current still flows through the heating element of the sub-heating current to play a normal heating role, and then continue to debug the on-off control components in other sub-heating currents. This control method can still locate the abnormal temperature area when the temperature protection component is abnormal, such as when the sensed temperature sensitivity is reduced or the temperature protection component fails, and close the on-off control component of the sub-heating circuit where the abnormal temperature area is located, so as to avoid the danger of local rapid heating of the temperature controlled device.

[0086] In some embodiments, the preset interval time period in step S4 can be obtained by performing a heating test on the temperature measuring element and the corresponding sub-heating circuit monitored by it when the temperature controlled device is unloaded. For example, the temperature controlled device is a pipeline, and no controlled substance is introduced into the pipeline. In a heating test process, step S1 is executed to make each heating element heat the pipeline until the temperature equilibrium is reached, and then the on-off control element of a sub-heating circuit is closed through the control module, and the temperature is measured by the corresponding temperature measuring element monitoring the area, and the corresponding relationship between the temperature and time of the area is obtained. According to the corresponding relationship between the temperature and time of the area, the duration of the temperature drop in the area is determined. Perform multiple heating test processes to heat the pipeline to different temperatures, and obtain the corresponding relationship between different pipeline temperatures and the duration of the temperature drop in the area. The preset interval time period in step S4 can be selected according to the corresponding relationship and used as pre-stored information. In some embodiments, a certain time can be appropriately extended based on the duration obtained by the corresponding selection according to the corresponding relationship. The degree of appropriate extension is necessary to avoid negative impact on the material in the temperature-controlled device and the temperature-controlled device itself, for example, the temperature-controlled device, such as the pipe, will not cause abnormal pressure increase due to severe local overheating. Even if the first circuit of the sub-heating circuit where the controlled on-off control element is located in step S3 is in a normal state, after the on-off control element in the sub-heating circuit is controlled to be closed in step S5, the resistance of its second circuit will be much lower than that of its first circuit, and most of the current will bypass the first circuit and flow through the second circuit, so that this normal sub-heating circuit cannot play a normal heating role through its heating element, and the temperature of the area is actually reduced. If the preset interval time period in step S4 is too long, the over-temperature area is not detected and controlled in time, and the over-temperature area has a local overheating problem, and the area that should be heated normally will cool down instead.

[0087] In step S4 of some embodiments, after a preset interval time period, it is determined through the temperature information fed back by the temperature measuring component that the measured temperature of the area where the M sub-heating circuits are located is lower than the measured temperature of the area where the M sub-heating circuits are located obtained in step S2, and is higher than the preset comparison temperature; after step S4 is executed, the following steps are performed: S51: after controlling the on-off control element in the closed state to remain in the closed state to complete the on-off debugging, controlling one of the remaining on-off control elements that has not undergone the on-off debugging to be in the closed state; S52: Repeat step S51 to complete the on-off debugging of at least two on-off control components.

[0088] After a preset interval time period, when it is determined that the measured temperatures of the areas where the M sub-heating circuits are located are lower than the measured temperatures of the areas where the M sub-heating circuits are located obtained in step S2, and are higher than the preset comparison temperature, it indicates that the over-temperature area is not only the area where the sub-heating circuit where the on-off control component controlled to be closed in S3 is located, but there are other over-temperature areas. Therefore, it is necessary to keep the controlled on-off control component in a closed state in S51, so that the resistance of the second circuit where the controlled on-off control component is located is much lower than that of the first circuit, and most of the current will bypass the first circuit and flow through the second circuit, thereby reducing or even eliminating the heating effect of the heating component in the over-temperature area. The control method can quickly cool down the over-temperature area of ​​the temperature-controlled device, which is beneficial to maintaining a certain temperature of the temperature-controlled device.

[0089] In the above description, the description with reference to the terms "an embodiment", "some embodiments", "example", "specific example" and the like means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0090] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments may still be modified, or some or all of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A heating control device for semiconductor equipment, characterized in that: include: A heating layer, the heating layer is used to be sleeved on the temperature controlled device of the semiconductor device; the heating layer is provided with a plurality of sub-heating circuits connected in series, each of the sub-heating circuits includes a first circuit formed by a heating element and a temperature protection element connected in series, and a second circuit including an on-off control element, the first circuit and the second circuit are arranged in parallel; The temperature protection element is configured to close or open in response to the sensed temperature to control the on / off state of the first circuit; When each of the on-off control elements is in an off state, each of the first circuits forms a current path connected in series; When at least one of the on-off control elements is in a closed state, the second circuit where the on-off control element is located and the first circuit in the adjacent sub-heating circuit form a current path.

2. The heating control device for semiconductor equipment according to claim 1, characterized in that: The heating layer includes a main heating layer and a protective layer which are sequentially arranged from the inside to the outside, each heating element is located in the main heating layer, each temperature protection element and each on-off control element are located in the protective layer, and the heating element and the temperature protection element of the same sub-heating circuit are separated by at least part of the main heating layer and / or at least part of the protective layer.

3. The heating control device for semiconductor equipment according to claim 1, characterized in that: The heating element and the temperature protection element are arranged on the same side of the temperature controlled device in the circumferential direction, and the heating element and the temperature protection element are staggered; or, the heating element and the temperature protection element are respectively arranged on opposite sides of the temperature controlled device in the circumferential direction.

4. The heating control device for semiconductor equipment according to claim 1, characterized in that: The first circuit includes a first lead-in wire electrically connected to the heating element, a first intermediate wire electrically connected to the heating element and the temperature protection element, and a first lead-out wire electrically connected to the temperature protection element to realize the series connection of the heating element and the temperature protection element, and the second circuit includes a second lead-in wire and a second lead-out wire electrically connected to the on-off control element, the first lead-out wire and the second lead-out wire intersect to form a second intermediate wire located between the temperature protection element and the on-off control element, and the first lead-in wire and the second lead-in wire of the adjacent first circuits are electrically connected to the second intermediate wire respectively.

5. The heating control device for semiconductor equipment according to claim 4, characterized in that: It also includes a control module, which is electrically connected to the input wire and the output wire of the control module. The number of the sub-heating circuits is N, where N is a positive integer greater than or equal to 2. The first lead-in wire and the second lead-in wire of the first sub-heating circuit are electrically connected to the input wire respectively, and the second intermediate wire of the Nth sub-heating circuit is electrically connected to the lead-out wire.

6. The heating control device for semiconductor equipment according to claim 4, characterized in that: Each of the sub-heating circuits is arranged sequentially along a first direction. In the sub-heating circuit, the first intermediate conductor is electrically connected to the heating element and then extends a preset length along the first direction, then extends a predetermined length along a second direction opposite to the first direction, and then is electrically connected to the temperature protection element.

7. The heating control device for semiconductor equipment according to claim 1, characterized in that: The heating element includes a heating resistor, the temperature protection element includes a temperature control switch, and the on-off control element includes a jump switch.

8. The heating control device for semiconductor equipment according to claim 7, characterized in that: The temperature control switch and the on-off switch are interlocked.

9. The heating control device for semiconductor equipment according to claim 2, characterized in that: It also includes a temperature measuring layer and a heat-insulating layer which are sequentially sleeved outside the heating layer, the temperature measuring layer includes at least one temperature measuring element, the heat-insulating layer includes a glass fiber fabric with a porous structure, the glass fiber fabric with a porous structure includes glass fiber needle-punched felt, each of the temperature measuring elements is arranged in a one-to-one correspondence with each of the sub-heating circuits, or the number of the temperature measuring elements is less than the number of the sub-heating circuits.

10. The heating control device for semiconductor equipment according to claim 5, characterized in that: Each of the on-off control components is electrically connected to the control module.

11. The heating control device for semiconductor equipment according to claim 2, characterized in that: It also includes a dielectric insulation layer, the main heating layer is sleeved outside the dielectric insulation layer, the dielectric insulation layer is configured to allow the heat generated by the heating element to pass through and produce a heating effect on the temperature controlled device of the semiconductor equipment, and the dielectric insulation layer is provided with at least one leak detection device.

12. The heating control device for semiconductor equipment according to claim 11, characterized in that: The medium insulation layer includes an insulation sleeve and a medium contained in the insulation sleeve, wherein the medium includes water, heat-conducting oil or liquid metal; or the medium insulation layer includes a vacuum sleeve, a heat radiation element arranged in the vacuum sleeve, and a functional circuit sealed and electrically connected to the vacuum sleeve and electrically connected to the heat radiation element, so that the heat radiation element is driven by the functional circuit to form heat radiation, and the heat radiation element includes a nickel-chromium alloy element or a tungsten element.

13. A method for controlling heating of a semiconductor device, characterized in that: A temperature controlled device applied to a semiconductor device, wherein the temperature controlled device of the semiconductor device is provided with a heating control device, wherein the heating control device comprises a heating layer, wherein the heating layer is sleeved on the temperature controlled device of the semiconductor device; wherein the heating layer is provided with a plurality of sub-heating circuits connected in series, wherein each of the sub-heating circuits comprises a first circuit formed by a heating element and a temperature protection element connected in series, and a second circuit comprising an on-off control element, wherein the first circuit and the second circuit are arranged in parallel; wherein the temperature protection element is configured to turn on or off the first circuit in response to a sensed temperature; and wherein the heating control method comprises: S1: Control each of the temperature protection components to be in a closed state to turn on each of the first circuits, control each of the on-off control components to be in an open state, and control each of the heating components of the first circuits to heat the temperature-controlled device; S2: determining that the temperature of the area where at least one of the sub-heating circuits is located is abnormal; S3: Control the on-off control element in the temperature abnormality area to be in a closed state, so that the second circuit where the on-off control element is located is connected to the first circuit of the adjacent sub-heating circuit.

14. The method for controlling heating of a semiconductor device according to claim 13, wherein: The heating control device further comprises at least one temperature measuring element, wherein the temperature measuring element is arranged in an area where the M sub-heating circuits connected in series are located; In the step S2, the step of determining that the temperature of the area where at least one of the sub-heating circuits is located is abnormal includes determining that the measured temperatures of the areas where the M sub-heating circuits are located are higher than the preset comparison temperature and become over-temperature areas through the measured temperature information fed back by the temperature measuring component, and determining that each of the temperature protection components in the M sub-heating circuits is in a closed state; In step S3, the step of controlling the on-off control element in the temperature abnormality area to be in a closed state includes controlling one of the M on-off control elements to be in a closed state, where M is a positive integer greater than or equal to 2; After step S3 is completed, the following steps are performed: S4: After a preset interval time period, it is determined that the temperature of the area where the M sub-heating circuits are located is higher than the preset comparison temperature through the temperature information fed back by the temperature measuring component: S5: Control the on-off control component in the closed state to be in the open state or the closed state to complete the on-off debugging, and then perform the on-off debugging on at least part of the remaining on-off control components respectively, until it is determined through the temperature information fed back by the temperature measuring component that the measured temperature of the area where the M sub-heating circuits are located is not higher than the preset comparison temperature.

15. The method for controlling heating of a semiconductor device according to claim 14, wherein: In the step S4, after a preset interval time period, it is determined through the temperature information fed back by the temperature measuring component that the measured temperature of the area where the M sub-heating circuits are located is not lower than the measured temperature of the area where the M sub-heating circuits are located obtained in the step S2, and the step S5 includes: S51: after controlling the on-off control element in the closed state to be in the open state to complete the on-off debugging, controlling one of the remaining on-off control elements that has not been debugged to be in the closed state; S52: Repeat step S51 to complete the on-off debugging of at least two on-off control components in the M sub-heating circuits.

16. The method for controlling heating of a semiconductor device according to claim 14, wherein: In the step S4, after a preset interval time period, it is determined through the temperature information fed back by the temperature measuring component that the measured temperatures of the areas where the M sub-heating circuits are located are lower than the measured temperatures of the areas where the M sub-heating circuits are located obtained in the step S2, and are higher than the preset comparison temperature, and the step S5 includes: S51: after controlling the on-off control element in the closed state to remain in the closed state to complete the on-off debugging, controlling one of the remaining on-off control elements that has not undergone the on-off debugging to be in the closed state; S52: Repeat step S51 to complete the on-off debugging of at least two on-off control components.

17. The method for controlling heating of a semiconductor device according to claim 13, wherein: In step S2, the step of determining whether the temperature in the area where at least one of the sub-heating circuits is located is abnormal includes determining whether the temperature in the area where the corresponding temperature protection component is located is abnormal after determining that the corresponding temperature protection component is in an open state based on feedback information from at least one of the temperature protection components.

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