ICMOS chip light cone coupling method, ICMOS chip, microprocessor and solar blind ultraviolet light detection equipment

Abstract

The invention relates to a light cone coupling method of an ICMOS chip, the ICMOS chip, a microprocessor and solar blind ultraviolet light detection equipment, and relates to the technical field of solar blind ultraviolet light detection. By adopting the method, the utilization rate of the optical signal can be effectively improved. The method comprises the following steps: cleaning a light-sensitive surface of the CMOS chip by using analytically pure alcohol; cutting the small plane of the light cone, and when the light cone is coupled and bonded, leaving two rows of pixel units at the edge of the pixel region of the light-sensitive surface of the CMOS chip; the surface of the light cone is cleaned through analytically pure alcohol, and an ITO thin film is evaporated between the small end face of the light cone and the CMOS chip to serve as a grounded conducting layer; after a CMOS chip, a light cone and an image intensifier are aligned, the CMOS chip, the light cone and the image intensifier are horizontally separated respectively, epoxy glue with the glue mixing proportion of 3: 1 is dripped on the surface of a light sensing face, the CMOS chip is placed behind a three-dimensional precise displacement table, adjustment is conducted while observation is conducted on the other plane of the light cone, meanwhile, the light cone is slightly pressed, and the CMOS chip is placed on the three-dimensional precise displacement table. And the epoxy glue is uniformly coated in the light-sensitive surface and does not generate bubbles.

Description

Technical Field

[0001] The present application relates to the technical field of solar-blind ultraviolet light detection, and in particular to a light cone coupling method of an ICMOS chip, an ICMOS chip, a microprocessor and a solar-blind ultraviolet light detection device. Background Art

[0002] Sunlight is a complex light with multiple wavelengths. When it passes through the atmosphere and enters the earth, the light in the solar-blind ultraviolet band (200-280 nm) will be absorbed by the ozone layer. Therefore, the solar-blind ultraviolet light from the sun can hardly reach the earth's surface. Since there is no interference from the sun, the largest source of solar-blind ultraviolet light, solar-blind ultraviolet detection has the advantage of low background noise. When abnormalities occur in transmission lines and power equipment, a large amount of ultraviolet light will be generated due to corona discharge, especially ultraviolet light in the solar-blind band. This characteristic can be used to capture such abnormalities, so solar-blind ultraviolet imaging technology is used in corona discharge detection.

[0003] In traditional technology, ICMOS chips with image enhancement function are usually used to obtain solar-blind ultraviolet images, where ICMOS chips refer to enhanced CMOS (Complementary Metal-Oxide-Semiconductor) chips. However, the current ICMOS chip coupling technology mainly uses relay mirrors for lens coupling. This method will result in a large volume and total amount of the entire device (movement), which is not suitable for the miniaturization and modularization of integrated movements, and its application in handheld and portable devices is limited, and the utilization rate of optical signals is also low. Summary of the invention

[0004] Based on this, it is necessary to provide a light cone coupling method for an ICMOS chip, an ICMOS chip, a microprocessor and a day-blind ultraviolet light detection device to address the above technical problems.

[0005] In a first aspect, the present application provides a light cone coupling method for an ICMOS chip, comprising the following steps:

[0006] Before starting to couple and bond the CMOS chip and the light cone, remove the protective glass window on the surface of the CMOS chip, and use analytical pure alcohol to clean the photosensitive surface of the CMOS chip;

[0007] Cutting the small plane of the light cone, and leaving two rows of pixel units at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip when the light cone is coupled and bonded;

[0008] The surface of the light cone is cleaned with analytical pure alcohol, and after air drying without leaving any marks, an ITO film is evaporated between the small end face of the light cone and the CMOS chip as a grounding conductive layer; the conductive layer is used to separate the fluorescent screen from the CMOS chip;

[0009] After aligning the CMOS chip, the light cone and the image intensifier, separate them horizontally, drip epoxy glue with a mixing ratio of 3:1 on the surface of the photosensitive surface, place the CMOS chip on a three-dimensional precision translation stage, adjust it while observing the other plane of the light cone, and press the light cone slightly at the same time to make the epoxy glue evenly coated on the photosensitive surface without generating bubbles.

[0010] In one embodiment, aligning the CMOS chip, the light cone and the image intensifier comprises:

[0011] The CMOS chip, the light cone and the image intensifier are respectively placed on a three-dimensional precision displacement platform for position alignment, so that the large end face of the light cone is aligned with the fluorescent screen of the image intensifier, and the small end face of the light cone is aligned with the photosensitive surface; the CMOS chip, the light cone and the image intensifier are adjusted and aligned in XYZ directions, so that the optical axes of the CMOS chip, the light cone and the image intensifier overlap and are on the same straight line.

[0012] In one embodiment, the step of evaporating an ITO film between the small end face of the light cone and the CMOS chip comprises:

[0013] The ITO film was prepared on the small end face of the light cone by DC magnetron sputtering, and an ITO ceramic target with a ratio of indium oxide to tin oxide of 9:1 was selected. The sputtering gas was argon, the reaction gas was oxygen with an oxygen content of 1.9±0.1%, the deposition temperature was 180±20°C, and the sputtering power was 3.5±0.5 kW. The ITO film was pre-deposited for 15 minutes to remove residual alcohol and impurities on the surface, and then deposited for 60 minutes.

[0014] In one embodiment, the cutting of the small plane of the light cone and leaving two rows of pixel units at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip when the light cone is coupled and bonded include:

[0015] The small plane of the light cone is cut using numerical control processing equipment CNC and a small grinding wheel until the plane in the light cone coupled with the CMOS chip is processed into a matching square surface, and when the light cone is coupled and bonded, two rows of pixel units are left at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip, so that the square surface fits the photosensitive surface of the CMOS chip.

[0016] In one embodiment, before dripping epoxy glue with a mixing ratio of 3:1 on the surface of the photosensitive surface, the method further includes:

[0017] The epoxy resin and the acid anhydride curing agent are configured in a ratio of 3:1, and after being mixed and stirred evenly in a clean environment, the epoxy glue with a mixing ratio of 3:1 is obtained.

[0018] In one embodiment, the step of dripping epoxy glue with a mixing ratio of 3:1 on the surface of the photosensitive surface includes:

[0019] The epoxy glue with a mixing ratio of 3:1 is left to stand for more than 30 minutes until the bubbles in the epoxy glue are completely eliminated; and the epoxy glue with a mixing ratio of 3:1 is evenly dropped on the surface of the photosensitive surface.

[0020] In one embodiment, the step of uniformly dripping the epoxy glue having a mixing ratio of 3:1 onto the surface of the photosensitive surface includes:

[0021] Use a 10 ml syringe to drip 2-3 drops at the center of the photosensitive surface, ensuring that the coating is as thin as possible; use the miniature force sensors at the four corners to maintain absolute parallelism of the coupling surfaces for a period of time; repeat the above steps to couple the other plane of the light cone to the fluorescent screen of the image intensifier.

[0022] In a second aspect, the present application further provides an ICMOS chip, which is prepared according to the light cone coupling method of the ICMOS chip described in the aforementioned embodiment.

[0023] In a third aspect, the present application also provides a microprocessor, comprising the above-mentioned ICMOS chip.

[0024] In a fourth aspect, the present application also provides a solar-blind ultraviolet light detection device, comprising the above-mentioned microprocessor.

[0025] The light cone coupling method of the above-mentioned ICMOS chip, the ICMOS chip, the microprocessor and the day-blind ultraviolet light detection device, when coupling, the large end of the light cone is attached to the fluorescent screen of the image intensifier, and the small end of the light cone is attached to the CMOS input window, and the image transmission between two devices of different sizes is realized by image doubling of the light cone. On the one hand, this effectively solves the defects of the traditional coupling scheme such as large volume and total amount, difficulty in miniaturization and modularization, which leads to limited application in handheld detection equipment and portable detection equipment. On the other hand, high-precision coupling is achieved through a simple process, which can solve the technical problem of reduced imaging resolution under light cone coupling and effectively improve the utilization rate of optical signals.

[0026] In combination with the implementation scheme of the present application, compared with the prior art, its significant advantages are:

[0027] (1) Abandon the relay mirror coupling scheme in traditional technology, because the method of lens coupling through relay mirrors will lead to a large volume and total amount of the entire device (movement), which is not suitable for the miniaturization and modularization of the integrated movement, and its application in handheld devices and portable devices is limited, and the utilization rate of optical signals is also low; the innovation of this application is conducive to the miniaturization, modularization, total amount reduction and size reduction of the integrated movement on the one hand, and is conducive to its application in handheld devices and portable devices on the other hand.

[0028] (2) The assembly of the relay lens group involves optical matching calculations, water vapor isolation, and glue bonding during the assembly process. It is necessary to minimize the contamination of the glue on the effective area of ​​the lens. The preparation process is complex and has high requirements for the preparation process and environment. The present application uses a coupling process to ensure that the distance between the light cone and the CMOS chip is reduced to the smallest possible, which has a high utilization rate of the light signal and solves the technical problem of reduced imaging resolution under light cone coupling.

[0029] (3) The innovative coupling process avoids the occurrence of gold wire leads and interference fringes that may damage the CMOS chip. The ITO coating is grounded to protect the CMOS components and avoid damage caused by the high voltage of the image intensifier tube. At the same time, the ITO film further ensures the conductivity and transmittance of the film, thereby improving the efficiency of optical signal transmission.

[0030] (4) The bonding medium between the light cone and the effective surface of the CMOS chip is a high-transmittance epoxy glue drop with good fluidity. The mixing ratio is 3:1. The refractive index of the ring glue after fixation is equivalent to the refractive index data of the effective surface of the CMOS chip, ensuring the transmission efficiency of the optical signal and the imaging resolution of the CMOS chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the drawings required for use in the embodiments of the present application or related technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0032] Figure 1 A schematic diagram of a process of a light cone coupling method of an ICMOS chip in one embodiment;

[0033] Figure 2 Schematic diagram of the structure of a solar-blind ultraviolet ICMOS chip in one embodiment. DETAILED DESCRIPTION

[0034] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0036] In one embodiment, Figure 1 As shown, a light cone coupling method for an ICMOS chip is provided, comprising the following steps:

[0037] Step S101, before starting to couple and bond the CMOS chip and the light cone, remove the protective glass window on the surface of the CMOS chip, and use analytical pure alcohol to clean the photosensitive surface of the CMOS chip.

[0038] Step S102, cutting the small plane of the light cone, and leaving two rows of pixel units at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip when the light cone is coupled and bonded.

[0039] Step S103, using analytical pure alcohol to clean the surface of the light cone, after air drying without leaving any marks, evaporate an ITO film between the small end face of the light cone and the CMOS chip as a grounding conductive layer; the conductive layer is used to separate the fluorescent screen from the CMOS chip.

[0040] Step S104, after aligning the CMOS chip, light cone and image intensifier, separate the three horizontally, use epoxy glue with a mixing ratio of 3:1 to drip on the surface of the photosensitive surface, place the CMOS chip on the three-dimensional precision translation stage, adjust it while observing it on the other plane of the light cone, and press the light cone slightly at the same time to make the epoxy glue evenly coated on the photosensitive surface without generating bubbles.

[0041] In the light cone coupling method of the above-mentioned ICMOS chip, when coupling is performed, the larger end is attached to the fluorescent screen of the image intensifier, and the smaller end of the light cone is attached to the CMOS input window. The image transmission between two devices of different sizes is achieved through image shrinkage of the light cone. This effectively solves the defects of traditional coupling solutions, such as large volume and total amount, and difficulty in miniaturization and modularization, which leads to limited application in handheld detection equipment and portable detection equipment. On the other hand, high-precision coupling is achieved through a simple process, which can solve the technical problem of reduced imaging resolution under light cone coupling and effectively improve the utilization rate of optical signals.

[0042] In one embodiment, in the above step S104, aligning the CMOS chip, the light cone and the image intensifier specifically includes the following steps:

[0043] The CMOS chip, light cone and image intensifier are placed on a three-dimensional precision displacement stage for position alignment, so that the large end face of the light cone is aligned with the fluorescent screen of the image intensifier, and the small end face of the light cone is aligned with the photosensitive surface; the CMOS chip, light cone and image intensifier are adjusted and aligned in XYZ directions, so that the optical axes of the CMOS chip, light cone and image intensifier overlap and are on the same straight line.

[0044] Specifically, the CMOS chip, light cone and image intensifier are placed on a three-dimensional precision translation stage for position alignment. For example, the large end of the light cone faces the fluorescent screen (circular) of the image intensifier, and the small end faces the photosensitive surface of the CMOS chip (leaving 2 pixel units empty at the edge). Through XYZ adjustment and alignment, the optical axes of the three are made to overlap and be on the same straight line.

[0045] In one embodiment, in the above step S103, the ITO film is evaporated between the small end face of the light cone and the CMOS chip, which specifically includes the following steps:

[0046] The ITO film was prepared on the small end face of the light cone by DC magnetron sputtering. An ITO ceramic target with an indium oxide:tin oxide ratio of 9:1 was selected. The sputtering gas was argon, the reaction gas was oxygen with an oxygen content of 1.9±0.1%, the deposition temperature was 180±20℃, and the sputtering power was 3.5±0.5 kW. The ITO film was pre-deposited for 15 minutes to remove residual alcohol and impurities on the surface, and then deposited for 60 minutes.

[0047] Specifically, the ITO film was prepared on the small end face of the light cone (an end face coupled to the CMOS chip) by DC magnetron sputtering, and an ITO ceramic target with an indium oxide: tin oxide = 9:1 was selected. The sputtering gas was argon, the reaction gas was oxygen with an oxygen content of 1.9±0.1%, the deposition temperature was 180±20 ℃, and the sputtering power was 3.5±0.5 kW; the pre-deposition time was 15 minutes to remove residual alcohol and impurities on the surface, and the deposition time was 60 minutes.

[0048] In one embodiment, in the above step S102, the small plane of the light cone is cut, and when the light cone is coupled and bonded, two rows of pixel units are left at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip, which specifically includes the following steps:

[0049] Use CNC machining equipment and a small grinding wheel to cut the small plane of the light cone until the plane in the light cone that is coupled with the CMOS chip is processed into a matching square surface. When the light cone is coupled and bonded, two rows of pixel units are left at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip, so that the square surface fits the photosensitive surface of the CMOS chip.

[0050] Specifically, since the two planes of the light cone are circular, they cannot directly fit with the photosensitive surface of the CMOS sensor. Therefore, it is necessary to use CNC machining equipment and a small grinding wheel to cut the small plane of the light cone and process the plane coupled with the CMOS chip into a matching square. When the light cone is coupled and bonded, two rows of pixel units need to be left blank at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip so that the square surface can fit the photosensitive surface of the CMOS chip while avoiding touching the CMOS chip and leading to wire solder joints. At the same time, the size of the other larger circular end face matches the fluorescent screen of the image intensifier.

[0051] In one embodiment, before dripping epoxy glue with a mixing ratio of 3:1 on the surface of the photosensitive surface, the method of the present application further includes the following steps:

[0052] Epoxy resin and anhydride curing agent are configured in a ratio of 3:1, and after mixing and stirring evenly in a clean environment, an epoxy adhesive with a mixing ratio of 3:1 is obtained.

[0053] Specifically, epoxy resin: anhydride curing agent is configured in a ratio of 3:1. The epoxy glue has high transmittance and good fluidity. The anhydride curing agent can react with the epoxy resin at room temperature to complete the curing, and has good heat resistance and optical properties. A too high ratio will slow down the curing speed and affect the curing efficiency. A too low ratio will cause over-curing and make the cured part brittle, affecting the strength of use. The refractive index of the 3:1 epoxy glue after fixation is 1.53, which is consistent with the refractive index of the CMOS effective surface. The closer the refractive indices of the two are, the lowest the reflection loss.

[0054] In one embodiment, in the above step S104, epoxy glue with a mixing ratio of 3:1 is dripped onto the surface of the photosensitive surface, which specifically includes the following steps:

[0055] Let the epoxy glue with a mixing ratio of 3:1 stand for more than 30 minutes until the bubbles in the epoxy glue are completely eliminated; drop the epoxy glue with a mixing ratio of 3:1 evenly on the surface of the photosensitive surface.

[0056] In the above steps, the epoxy glue with a mixing ratio of 3:1 is evenly dripped on the surface of the photosensitive surface, which specifically includes the following steps:

[0057] Use a 10 ml syringe to place 2-3 drops at the center of the photosensitive surface, making sure the coating is as thin as possible; use the miniature force sensors at the four corners to keep the coupling surfaces absolutely parallel for a period of time; repeat the above steps to couple the other plane of the light cone to the fluorescent screen of the image intensifier.

[0058] Specifically, after mixing and stirring evenly in proportion in an environment as clean as possible, let it stand for more than 30 minutes to eliminate bubbles; then use a 10 ml syringe to drip 2-3 drops at the center of the photosensitive surface of the CMOS chip to ensure that the coating is as thin as possible, use the micro force sensors at the four corners to keep the coupling surfaces absolutely parallel for a period of time, and repeat this step to couple the other plane of the light cone to the fluorescent screen of the image intensifier.

[0059] It should be noted that if Figure 2 As shown, the present application realizes coupling from the image intensifier to the CMOS chip through a light cone coupling component. In this way, the distance between the light cone and the CMOS chip needs to be reduced to as small as possible, and it is necessary to avoid large pressure that damages the CMOS chip and causes functional impairment. Improper handling will lead to a reduction in coupling resolution and optical signal transmission efficiency. The light cone in the light cone coupling is a special optical fiber bundle. One end of the optical fiber panel can be processed into a reduced end face by stretching, namely the light cone. By stretching the size of the two end faces, the image can be enlarged or reduced. The image can be enlarged or reduced by transmitting the image through the light cone. In the application of the present application, when coupling is performed, the large end is attached to the fluorescent screen of the image intensifier, and the small end of the light cone is attached to the input window of the CMOS chip. The image transmission between two devices of different sizes is realized by doubling the image of the light cone.

[0060] The light cone coupling method of the ICMOS chip, the ICMOS chip, the microprocessor and the solar-blind ultraviolet light detection device proposed in this application have the following beneficial effects:

[0061] (1) Abandoning the traditional relay mirror coupling scheme and using light cone coupling is conducive to miniaturization and modularization, reducing the total amount and size, and is also conducive to application in handheld and portable devices.

[0062] (2) Through the coupling process, the distance between the light cone and the CMOS chip is reduced to the smallest possible, which is beneficial to improving the utilization rate of the optical signal and solving the technical problem of reduced imaging resolution under light cone coupling.

[0063] (3) The innovative coupling process avoids the occurrence of gold wire leads and interference fringes that may damage the CMOS chip. The CMOS chip is protected by ITO coating grounding to avoid damage caused by the high voltage of the image intensifier tube. At the same time, the ITO film further ensures the conductivity and transmittance of the film, thereby improving the efficiency of optical signal transmission.

[0064] (4) The bonding medium between the light cone and the effective surface of the CMOS chip is a high-transmittance epoxy glue drop with good fluidity. The mixing ratio is 3:1. The refractive index of the ring glue after fixation is equivalent to the refractive index data of the CMOS effective surface, ensuring the transmission efficiency of the optical signal and the imaging resolution of the CMOS.

[0065] In one embodiment, an ICMOS chip is further provided, which is prepared according to the light cone coupling method of the ICMOS chip of the above-mentioned embodiment.

[0066] In one embodiment, a microprocessor is provided, comprising the above-mentioned ICMOS chip.

[0067] In one embodiment, a solar-blind ultraviolet light detection device is also provided, comprising the above-mentioned microprocessor.

[0068] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.

[0069] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A light cone coupling method for an ICMOS chip, characterized in that: The steps include: Before starting to couple and bond the CMOS chip and the light cone, remove the protective glass window on the surface of the CMOS chip, and use analytical pure alcohol to clean the photosensitive surface of the CMOS chip; Cutting the small plane of the light cone, and leaving two rows of pixel units at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip when the light cone is coupled and bonded; The surface of the light cone is cleaned with analytical pure alcohol, and after air drying without leaving any marks, an ITO film is evaporated between the small end face of the light cone and the CMOS chip as a grounding conductive layer; The conductive layer is used to separate the fluorescent screen from the CMOS chip; After aligning the CMOS chip, the light cone and the image intensifier, separate them horizontally, drip epoxy glue with a mixing ratio of 3:1 on the surface of the photosensitive surface, place the CMOS chip on a three-dimensional precision translation stage, adjust it while observing the other plane of the light cone, and press the light cone slightly at the same time to make the epoxy glue evenly coated on the photosensitive surface without generating bubbles.

2. The method according to claim 1, characterized in that: The aligning of the CMOS chip, the light cone and the image intensifier comprises: The CMOS chip, the light cone and the image intensifier are respectively placed on a three-dimensional precision displacement stage for position alignment, so that the large end face of the light cone is aligned with the fluorescent screen of the image intensifier, and the small end face of the light cone is aligned with the photosensitive surface; The CMOS chip, the light cone and the image intensifier are adjusted and aligned in XYZ directions so that the optical axes of the CMOS chip, the light cone and the image intensifier coincide with each other and are on the same straight line.

3. The method according to claim 1, characterized in that The step of evaporating an ITO film between the small end face of the light cone and the CMOS chip comprises: The ITO film is prepared on the small end face of the light cone by a DC magnetron sputtering method, an ITO ceramic target with an indium oxide:tin oxide ratio of 9:1 is selected, argon is used as the sputtering gas, oxygen is used as the reaction gas, the oxygen content is 1.9±0.1%, the deposition temperature is 180±20°C, and the sputtering power is 3.5±0.5 kW; The ITO film was pre-deposited for 15 minutes to remove residual alcohol and impurities on the surface, and then deposited for 60 minutes.

4. The method according to claim 1, characterized in that: The step of cutting the small plane of the light cone and leaving two rows of pixel units at the edge of the photosensitive surface pixel area of ​​the CMOS chip when the light cone is coupled and bonded comprises: CNC machining equipment CNC and a small grinding wheel are used to cut the small plane of the light cone until the plane in the light cone coupled with the CMOS chip is processed into a matching square surface, and when the light cone is coupled and bonded, two rows of pixel units are left at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip, so that the square surface fits the photosensitive surface of the CMOS chip.

5. The method according to claim 1, characterized in that Before dripping epoxy glue with a mixing ratio of 3:1 on the surface of the photosensitive surface, the method further includes: The epoxy resin and the acid anhydride curing agent are configured in a ratio of 3:1, and after being mixed and stirred evenly in a clean environment, the epoxy glue with a mixing ratio of 3:1 is obtained.

6. The method according to claim 5, characterized in that The epoxy glue with a mixing ratio of 3:1 is dripped on the surface of the photosensitive surface, including: The epoxy glue with a mixing ratio of 3:1 is allowed to stand for more than 30 minutes until the bubbles in the epoxy glue are completely eliminated; The epoxy glue with a mixing ratio of 3:1 is evenly dropped on the surface of the photosensitive surface.

7. The method according to claim 6, characterized in that The step of uniformly dripping the epoxy glue having a mixing ratio of 3:1 onto the surface of the photosensitive surface comprises: Use a 10 ml syringe to drip 2-3 drops at the center of the photosensitive surface, making sure the coating is as thin as possible; Use micro force sensors at the four corners to keep the coupling surfaces absolutely parallel for a period of time; Repeat the above steps to couple another plane of the light cone to the phosphor screen of the image intensifier.

8. An ICMOS chip, characterized in that: The ICMOS chip is manufactured according to the light cone coupling method according to any one of claims 1 to 7.

9. A microprocessor, characterized in that: Comprising the ICMOS chip as claimed in claim 8.

10. A solar-blind ultraviolet light detection device, characterized in that: Comprising the microprocessor as claimed in claim 9.

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