Light cone coupling method of ICMOS chip, ICMOS chip, microprocessor and solar-blind ultraviolet light detection device

Abstract

This application relates to a light cone coupling method for an ICMOS chip, an ICMOS chip, a microprocessor, and a solar-blind ultraviolet light detection device, and relates to the field of solar-blind ultraviolet light detection technology. This method can effectively improve the utilization rate of light signals. The method comprises: using analytical-grade alcohol to clean the photosensitive surface of the CMOS chip; cutting the small facet of the light cone, and leaving two rows of pixel cells at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip when the light cone is coupled and bonded; cleaning the surface of the light cone with analytical-grade alcohol; vapor-depositing an ITO film between the small end face of the light cone and the CMOS chip as a grounding conductive layer; after aligning the CMOS chip, light cone, and image intensifier, separating them horizontally, applying epoxy glue with a 3:1 glue ratio to the surface of the photosensitive surface, placing the CMOS chip on a three-dimensional precision translation stage, and adjusting while observing the other plane of the light cone. Simultaneously, gently pressing the light cone to ensure that the epoxy glue is evenly coated on the photosensitive surface without generating bubbles.

Description

Technical Field

[0001] The present application relates to the technical field of solar-blind ultraviolet light detection, and in particular to a light cone coupling method for an ICMOS chip, an ICMOS chip, a microprocessor, and a solar-blind ultraviolet light detection device. Background Art

[0002] Sunlight is a complex light source consisting of multiple wavelengths. When it passes through the atmosphere and reaches Earth, light in the solar-blind ultraviolet band (200-280 nm) is absorbed by the ozone layer. Therefore, this solar-blind ultraviolet light from the sun is virtually incapable of reaching the Earth's surface. Without interference from the sun, the largest source of solar-blind ultraviolet light, solar-blind ultraviolet detection offers the advantage of low background noise. When power transmission lines and electrical equipment experience anomalies, they generate large amounts of ultraviolet light due to corona discharge, particularly in the solar-blind band. This characteristic can be exploited to capture such anomalies, and solar-blind ultraviolet imaging technology has been applied to corona discharge detection.

[0003] Traditionally, ICMOS chips with image intensification capabilities have been used to acquire solar-blind ultraviolet images. ICMOS chips refer to enhanced CMOS (Complementary Metal-Oxide-Semiconductor) chips. However, current ICMOS chip coupling technology primarily relies on lens coupling via relay lenses. This method results in a large device (core) and large overall size, making it unsuitable for miniaturization and modularization of integrated cores. This limits its application in handheld and portable devices, and also results in low optical signal utilization. Summary of the Invention

[0004] Based on this, it is necessary to provide a light cone coupling method for an ICMOS chip, an ICMOS chip, a microprocessor and a solar-blind ultraviolet light detection device to address the above technical problems.

[0005] In a first aspect, the present application provides a light cone coupling method for an ICMOS chip, comprising the following steps:

[0006] Before starting to couple and bond the CMOS chip and the light cone, remove the protective glass window on the surface of the CMOS chip and clean the photosensitive surface of the CMOS chip with analytical pure alcohol;

[0007] Cutting the small plane of the light cone, and leaving two rows of pixel units at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip when the light cone is coupled and bonded;

[0008] The surface of the light cone is cleaned with analytical pure alcohol and air-dried to leave no marks. An ITO film is then evaporated between the small end face of the light cone and the CMOS chip as a grounding conductive layer; the conductive layer is used to separate the fluorescent screen from the CMOS chip;

[0009] After aligning the CMOS chip, the light cone, and the image intensifier, the three are separated horizontally. Epoxy glue with a mixing ratio of 3:1 is dripped onto the surface of the photosensitive surface. The CMOS chip is placed on a three-dimensional precision translation stage and adjusted while observing the other plane of the light cone. At the same time, the light cone is slightly pressed to ensure that the epoxy glue is evenly coated on the photosensitive surface without generating bubbles.

[0010] In one embodiment, aligning the CMOS chip, the light cone, and the image intensifier includes:

[0011] The CMOS chip, the light cone, and the image intensifier are respectively placed on a three-dimensional precision displacement stage for position alignment, so that the large end face of the light cone is aligned with the fluorescent screen of the image intensifier, and the small end face of the light cone is aligned with the photosensitive surface; the CMOS chip, the light cone, and the image intensifier are adjusted and aligned in the XYZ directions so that the optical axes of the CMOS chip, the light cone, and the image intensifier coincide and are on the same straight line.

[0012] In one embodiment, the step of evaporating an ITO film between the small end face of the light cone and the CMOS chip includes:

[0013] The ITO film was prepared on the small end face of the light cone by DC magnetron sputtering. An ITO ceramic target with an indium oxide:tin oxide ratio of 9:1 was selected. The sputtering gas was argon, the reaction gas was oxygen with an oxygen content of 1.9±0.1%, the deposition temperature was 180±20°C, and the sputtering power was 3.5±0.5 kW. The ITO film was pre-deposited for 15 minutes to remove residual alcohol and impurities on the surface, and then deposited for 60 minutes.

[0014] In one embodiment, the cutting of the facets of the light cone and leaving two rows of pixel units at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip when the light cones are coupled and bonded include:

[0015] Use numerical control (CNC) machining equipment and a small grinding wheel to cut the small plane of the light cone until the plane in the light cone coupled with the CMOS chip is processed into a matching square surface. When the light cone is coupled and bonded, two rows of pixel units are left at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip, so that the square surface fits the photosensitive surface of the CMOS chip.

[0016] In one embodiment, before dripping epoxy glue with a mixing ratio of 3:1 on the surface of the photosensitive surface, the method further includes:

[0017] Epoxy resin and anhydride curing agent are configured in a ratio of 3:1, and after being mixed and stirred evenly in a clean environment, the epoxy adhesive with a mixing ratio of 3:1 is obtained.

[0018] In one embodiment, the step of dripping epoxy glue having a mixing ratio of 3:1 onto the surface of the photosensitive surface includes:

[0019] The epoxy glue with a mixing ratio of 3:1 is left to stand for more than 30 minutes until bubbles in the epoxy glue are completely eliminated; and the epoxy glue with a mixing ratio of 3:1 is evenly dropped on the surface of the photosensitive surface.

[0020] In one embodiment, the step of uniformly dripping the epoxy glue having a mixing ratio of 3:1 onto the surface of the photosensitive surface includes:

[0021] Use a 10 ml syringe to drip 2-3 drops at the center of the photosensitive surface, ensuring that the coating is as thin as possible; use the micro force sensors at the four corners to maintain absolute parallelism of the coupling surface for a period of time; repeat the above steps to couple the other plane of the light cone to the fluorescent screen of the image intensifier.

[0022] In a second aspect, the present application further provides an ICMOS chip, which is manufactured according to the light cone coupling method of the ICMOS chip described in the aforementioned embodiment.

[0023] In a third aspect, the present application also provides a microprocessor comprising the above-mentioned ICMOS chip.

[0024] In a fourth aspect, the present application also provides a solar-blind ultraviolet light detection device, comprising the above-mentioned microprocessor.

[0025] The light cone coupling method of the above-mentioned ICMOS chip, the ICMOS chip, the microprocessor and the day-blind ultraviolet light detection device, when coupling, the large end of the light cone is attached to the fluorescent screen of the image intensifier, and the small end of the light cone is attached to the CMOS input window, and image transmission between two devices of different sizes is achieved through image scaling of the light cone. On the one hand, this effectively solves the defects of traditional coupling solutions such as large volume and total amount, difficulty in miniaturization and modularization, which lead to limited application in handheld detection equipment and portable detection equipment. On the other hand, high-precision coupling is achieved through a simple process, which can solve the technical problem of reduced imaging resolution under light cone coupling and effectively improve the utilization rate of light signals.

[0026] Compared with the prior art, the present invention has the following significant advantages:

[0027] (1) Abandon the relay mirror coupling scheme in traditional technology, because the method of lens coupling through relay mirrors will lead to a large volume and total amount of the entire device (core), which is not suitable for the miniaturization and modularization of the integrated core, and its application in handheld devices and portable devices is limited, and the utilization rate of optical signals is also low; the innovation of this application is conducive to the miniaturization, modularization, total amount reduction and volume reduction of the integrated core on the one hand, and is conducive to its application in handheld devices and portable devices on the other hand.

[0028] (2) The assembly of the relay lens group involves optical matching calculations, water vapor isolation, and glue bonding during the assembly process. It is necessary to minimize the contamination of the glue on the effective area of ​​the lens. The preparation process is complex and has high requirements for the preparation process and environment. This application uses a coupling process to ensure that the distance between the light cone and the CMOS chip is reduced to the smallest possible, with high utilization of the light signal, solving the technical problem of reduced imaging resolution under light cone coupling.

[0029] (3) The innovative coupling process avoids the occurrence of gold wire leads and interference fringes that damage the CMOS chip. The CMOS components are protected by ITO coating grounding to avoid damage caused by the high voltage of the image intensifier tube. At the same time, the ITO film further ensures the conductivity and transmittance of the film, thereby improving the efficiency of optical signal transmission.

[0030] (4) The bonding medium between the light cone and the effective surface of the CMOS chip is a high-transmittance epoxy glue drop with good fluidity. The mixing ratio is 3:1. The refractive index of the ring glue after fixation is equivalent to the refractive index data of the effective surface of the CMOS chip, ensuring the transmission efficiency of the optical signal and the CMOS imaging resolution. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments of the present application or related technical descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying any creative work.

[0032] Figure 1 Schematic diagram of a process for a light cone coupling method of an ICMOS chip in one embodiment;

[0033] Figure 2 Schematic diagram of the structure of a solar-blind ultraviolet ICMOS chip in one embodiment. DETAILED DESCRIPTION

[0034] To facilitate understanding of the present application, a more comprehensive description of the present application will be provided below with reference to the accompanying drawings. The drawings illustrate preferred embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the present disclosure.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0036] In one embodiment, Figure 1 As shown, a light cone coupling method for an ICMOS chip is provided, comprising the following steps:

[0037] Step S101: before starting to couple and bond the CMOS chip and the light cone, remove the protective glass window on the surface of the CMOS chip and use analytical pure alcohol to clean the photosensitive surface of the CMOS chip.

[0038] Step S102 , cutting the small planes of the light cone, and leaving two rows of pixel units at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip when the light cone is coupled and bonded.

[0039] In step S103, the surface of the light cone is cleaned with analytical pure alcohol and air-dried to leave no marks. Then, an ITO film is evaporated between the small end face of the light cone and the CMOS chip as a grounded conductive layer; the conductive layer is used to separate the fluorescent screen from the CMOS chip.

[0040] In step S104, after aligning the CMOS chip, light cone, and image intensifier, separate them horizontally. Epoxy glue with a 3:1 ratio is dripped onto the photosensitive surface. The CMOS chip is placed on a three-dimensional precision translation stage and adjusted while observing the other plane of the light cone. At the same time, the light cone is gently pressed to ensure that the epoxy glue is evenly coated on the photosensitive surface without generating bubbles.

[0041] In the light cone coupling method for the aforementioned ICMOS chip, during coupling, the larger end of the light cone is attached to the fluorescent screen of the image intensifier, and the smaller end of the light cone is attached to the CMOS input window. Image transmission between two devices of different sizes is achieved through image scaling of the light cone. This effectively addresses the drawbacks of traditional coupling schemes, such as large volume and total volume, as well as difficulty in miniaturization and modularization, which limit their application in handheld and portable detection equipment. Furthermore, high-precision coupling is achieved through a simple process, which resolves the technical issue of reduced imaging resolution under light cone coupling and effectively improves the utilization rate of optical signals.

[0042] In one embodiment, in step S104, aligning the CMOS chip, the light cone, and the image intensifier specifically includes the following steps:

[0043] The CMOS chip, light cone, and image intensifier are placed on a three-dimensional precision translation stage for position alignment, so that the large end of the light cone is aligned with the fluorescent screen of the image intensifier, and the small end of the light cone is aligned with the photosensitive surface; the CMOS chip, light cone, and image intensifier are adjusted and aligned in the XYZ directions so that the optical axes of the CMOS chip, light cone, and image intensifier coincide and are on the same straight line.

[0044] Specifically, the CMOS chip, light cone, and image intensifier are placed on a three-dimensional precision translation stage for position alignment. For example, the large end of the light cone faces the fluorescent screen (circular) of the image intensifier, and the small end faces the photosensitive surface of the CMOS chip (leaving two pixel units empty at the edge). Through XYZ adjustment and alignment, the optical axes of the three are made to coincide and be on the same straight line.

[0045] In one embodiment, in the above step S103, the ITO thin film is evaporated between the small end face of the light cone and the CMOS chip, specifically comprising the following steps:

[0046] Indium tin oxide (ITO) thin films were prepared on the small end facet of the light cone by DC magnetron sputtering. An ITO ceramic target with an indium oxide:tin oxide ratio of 9:1 was selected. The sputtering gas was argon, the reaction gas was oxygen with an oxygen content of 1.9±0.1%, the deposition temperature was 180±20℃, and the sputtering power was 3.5±0.5 kW. The ITO film was pre-deposited for 15 minutes to remove residual alcohol and impurities on the surface, and then deposited for 60 minutes.

[0047] Specifically, the ITO film was prepared on the small end face of the light cone (the end face coupled to the CMOS chip) by DC magnetron sputtering. An ITO ceramic target with an indium oxide: tin oxide ratio of 9:1 was selected. The sputtering gas was argon, the reaction gas was oxygen with an oxygen content of 1.9±0.1%, the deposition temperature was 180±20°C, and the sputtering power was 3.5±0.5 kW. The pre-deposition time was 15 minutes to remove residual alcohol and impurities on the surface, and the deposition time was 60 minutes.

[0048] In one embodiment, in the above step S102, the facets of the light cone are cut, and when the light cones are coupled and bonded, two rows of pixel units are left at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip, which specifically includes the following steps:

[0049] Use CNC machining equipment and a small grinding wheel to cut the small plane of the light cone until the plane in the light cone that couples with the CMOS chip is processed into a matching square surface. When the light cone is coupled and bonded, two rows of pixel units are left at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip, so that the square surface fits the photosensitive surface of the CMOS chip.

[0050] Specifically, since the two planes of the light cone are circular, they cannot directly fit with the photosensitive surface of the CMOS sensor. Therefore, it is necessary to use CNC machining equipment and a small grinding wheel to cut the small plane of the light cone and process the plane coupled with the CMOS chip into a matching square. In addition, when the light cone is coupled and bonded, two rows of pixel units need to be left blank at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip so that the square surface can fit the photosensitive surface of the CMOS chip while avoiding touching the CMOS chip and leading to wire solder joints. At the same time, the size of the other larger circular end face matches the fluorescent screen of the image intensifier.

[0051] In one embodiment, before dripping epoxy glue having a mixing ratio of 3:1 onto the surface of the photosensitive surface, the method of the present application further includes the following steps:

[0052] Epoxy resin and anhydride curing agent are configured in a ratio of 3:1, and after mixing and stirring evenly in a clean environment, an epoxy adhesive with a mixing ratio of 3:1 is obtained.

[0053] Specifically, a 3:1 ratio of epoxy resin to anhydride curing agent is used. The epoxy adhesive has high transmittance and good fluidity. The anhydride curing agent reacts with the epoxy resin to complete the cure at room temperature, and exhibits excellent heat resistance and optical properties. A high ratio slows down the cure speed and affects efficiency, while a low ratio can lead to over-curing, making the cured portion brittle and affecting durability. The refractive index of the 3:1 epoxy adhesive after curing is 1.53, which matches the refractive index of the CMOS effective surface. The closer the two refractive indices are, the lower the reflection loss.

[0054] In one embodiment, in the above step S104, epoxy glue with a mixing ratio of 3:1 is dripped onto the surface of the photosensitive surface, which specifically includes the following steps:

[0055] Let the epoxy glue with a mixing ratio of 3:1 stand for more than 30 minutes until the bubbles in the epoxy glue are completely eliminated; evenly drop the epoxy glue with a mixing ratio of 3:1 on the surface of the photosensitive surface.

[0056] In the above steps, the epoxy glue with a mixing ratio of 3:1 is evenly dripped on the surface of the photosensitive surface, which specifically includes the following steps:

[0057] Use a 10 ml syringe to apply 2-3 drops to the center of the photosensitive surface, ensuring that the coating is as thin as possible; use the miniature force sensors at the four corners to maintain absolute parallelism of the coupling surface for a period of time; repeat the above steps to couple the other plane of the light cone to the fluorescent screen of the image intensifier.

[0058] Specifically, after mixing and stirring in proportion in the cleanest possible environment, let it stand for more than 30 minutes to eliminate bubbles; then use a 10 ml syringe to drip 2-3 drops at the center of the photosensitive surface of the CMOS chip to ensure that the coating is as thin as possible, use the micro force sensors at the four corners to keep the coupling surface absolutely parallel for a period of time, and repeat this step to couple the other plane of the light cone to the fluorescent screen of the image intensifier.

[0059] It should be noted that if Figure 2 As shown, the present application realizes coupling from the image intensifier to the CMOS chip through a light cone coupling component. In this way, the distance between the light cone and the CMOS chip needs to be reduced to as small as possible, and it is necessary to avoid large pressure that damages the CMOS chip and causes functional impairment. Improper handling will lead to a decrease in coupling resolution and optical signal transmission efficiency. The light cone in the light cone coupling is a special optical fiber bundle. One end of the optical fiber panel can be stretched and processed into a reduced end face, namely the light cone. By stretching the size of the two end faces, the image can also be enlarged or reduced. The image can be enlarged and reduced by transmitting the image through the light cone. In the application of the present application, when coupling is performed, the large end is attached to the fluorescent screen of the image intensifier, and the small end of the light cone is attached to the input window of the CMOS chip. The image transmission between two devices of different sizes is achieved by multiplying the image of the light cone.

[0060] The light cone coupling method for an ICMOS chip, the ICMOS chip, the microprocessor, and the solar-blind ultraviolet light detection device proposed in this application bring the following beneficial effects:

[0061] (1) Abandoning the traditional relay mirror coupling scheme and using light cone coupling is conducive to miniaturization and modularization, reducing the total amount and volume, and is also conducive to application in handheld devices and portable devices.

[0062] (2) Through the coupling process, the distance between the light cone and the CMOS chip is reduced to as small as possible, which is beneficial to improving the utilization rate of the light signal and solving the technical problem of reduced imaging resolution under light cone coupling.

[0063] (3) The innovative coupling process avoids the occurrence of gold wire leads and interference fringes that damage the CMOS chip. The CMOS chip is protected by ITO coating grounding to avoid damage caused by the high voltage of the image intensifier tube. At the same time, the ITO film further ensures the conductivity and transmittance of the film, thereby improving the efficiency of optical signal transmission.

[0064] (4) The bonding medium between the light cone and the effective surface of the CMOS chip is a high-transmittance epoxy glue drop with good fluidity. The mixing ratio is 3:1. The refractive index of the ring glue after fixation is equivalent to the refractive index data of the CMOS effective surface, ensuring the transmission efficiency of the optical signal and the imaging resolution of the CMOS.

[0065] In one embodiment, an ICMOS chip is further provided, which is manufactured according to the light cone coupling method of the ICMOS chip of the above embodiment.

[0066] In one embodiment, a microprocessor is provided, comprising the above-mentioned ICMOS chip.

[0067] In one embodiment, a solar-blind ultraviolet light detection device is also provided, comprising the above-mentioned microprocessor.

[0068] The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.

[0069] The above embodiments merely illustrate several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art may make various modifications and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the present application shall be determined by the appended claims.

Claims

1. A light cone coupling method for an ICMOS chip, characterized in that: The steps include: Before starting to couple and bond the CMOS chip and the light cone, remove the protective glass window on the surface of the CMOS chip and clean the photosensitive surface of the CMOS chip with analytical pure alcohol; Cutting the small plane of the light cone, and leaving two rows of pixel units at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip when the light cone is coupled and bonded; The surface of the light cone is cleaned with analytical pure alcohol and air-dried to leave no marks, and an ITO film is evaporated between the small end face of the light cone and the CMOS chip as a grounding conductive layer; The conductive layer is used to separate the fluorescent screen from the CMOS chip; After aligning the CMOS chip, the light cone, and the image intensifier, the three are separated horizontally. Epoxy glue with a mixing ratio of 3:1 is dripped onto the surface of the photosensitive surface. The CMOS chip is placed on a three-dimensional precision translation stage and adjusted while observing the other plane of the light cone. At the same time, the light cone is slightly pressed to ensure that the epoxy glue is evenly coated on the photosensitive surface without generating bubbles.

2. The method according to claim 1, characterized in that Aligning the CMOS chip, the light cone, and the image intensifier includes: Placing the CMOS chip, the light cone, and the image intensifier on a three-dimensional precision translation stage for position alignment, such that the large end face of the light cone is aligned with the fluorescent screen of the image intensifier, and the small end face of the light cone is aligned with the photosensitive surface; The CMOS chip, the light cone and the image intensifier are adjusted and aligned in XYZ directions so that the optical axes of the CMOS chip, the light cone and the image intensifier coincide with each other and are on the same straight line.

3. The method according to claim 1, characterized in that The evaporation of an ITO film between the small end face of the light cone and the CMOS chip comprises: The ITO film was deposited on the small end face of the light cone by DC magnetron sputtering. An ITO ceramic target with an indium oxide:tin oxide ratio of 9:1 was selected. The sputtering gas was argon, the reaction gas was oxygen with an oxygen content of 1.9±0.1%, the deposition temperature was 180±20°C, and the sputtering power was 3.5±0.5 kW. The ITO film was pre-deposited for 15 minutes to remove residual alcohol and impurities on the surface, and then deposited for 60 minutes.

4. The method according to claim 1, wherein The step of cutting the facet of the light cone and leaving two rows of pixel units at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip when the light cones are coupled and bonded comprises: Use numerical control (CNC) machining equipment and a small grinding wheel to cut the small plane of the light cone until the plane in the light cone coupled with the CMOS chip is processed into a matching square surface. When the light cone is coupled and bonded, two rows of pixel units are left at the edge of the pixel area of ​​the photosensitive surface of the CMOS chip, so that the square surface fits the photosensitive surface of the CMOS chip.

5. The method according to claim 1, wherein Before dripping epoxy glue with a mixing ratio of 3:1 on the surface of the photosensitive surface, the method further includes: Epoxy resin and anhydride curing agent are configured in a ratio of 3:1, and after being mixed and stirred evenly in a clean environment, the epoxy adhesive with a mixing ratio of 3:1 is obtained.

6. The method according to claim 5, characterized in that The epoxy glue having a mixing ratio of 3:1 is dripped onto the surface of the photosensitive surface, including: The epoxy glue having a mixing ratio of 3:1 was allowed to stand for more than 30 minutes until the bubbles in the epoxy glue were completely eliminated; The epoxy glue with a mixing ratio of 3:1 is evenly dropped on the surface of the photosensitive surface.

7. The method according to claim 6, characterized in that The step of uniformly dripping the epoxy glue having a mixing ratio of 3:1 onto the surface of the photosensitive surface comprises: Use a 10 ml syringe to apply 2-3 drops of the solution to the center of the photosensitive surface, ensuring that the coating is as thin as possible. Use the miniature force sensors at the four corners to keep the coupling surfaces absolutely parallel for a period of time; Repeat the above steps to couple another plane of the light cone to the phosphor screen of the image intensifier.

8. An ICMOS chip, characterized in that: The ICMOS chip is manufactured according to the light cone coupling method according to any one of claims 1 to 7.

9. A microprocessor, characterized in that: Comprising the ICMOS chip according to claim 8.

10. A solar-blind ultraviolet light detection device, characterized in that: Includes the microprocessor according to claim 9.

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