Slit type gas supply device and coating equipment

Abstract

The present invention relates to the field of semiconductor manufacturing, and in particular to a slit-type gas supply device and a coating device. The slit-type gas supply device includes a gas supply device, a first shunt pipe and a first diffuser, wherein the first shunt pipe is provided with a first gas inlet and a plurality of first spray holes all connected to the first shunt pipe, the first gas inlet is connected to the gas supply device through a pipeline, a first uniform gas space is provided in the first diffuser, all the first spray holes are connected to the first uniform gas space, a first slit connected to the first uniform gas space is provided on the first diffuser, and the first slit is used to release the gas in the first uniform gas space. By installing a slit diffuser on the dotted line side of the gas outlet, the uniformity of the released gas is improved, and uniformly distributed process gas is accurately provided to the workpiece, thereby avoiding ineffective diffusion of the process gas and saving space in the vacuum chamber.

Description

Technical Field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a slit-type gas supply device and a coating device. Background Art

[0002] By using PVD, CVD and dry etching process technologies, specific film materials required for various thin film devices can be accurately deposited or partially removed on semiconductor substrates. These processes are crucial for the manufacture of microelectronic devices, optoelectronic devices and other thin film technology applications.

[0003] At present, the traditional gas supply device usually adopts the two-way flow method in the plane. This design allows the gas to be evenly distributed to different areas from a point-like gas source. However, this gas distribution system often occupies a large vacuum chamber space, which not only reduces the space utilization of the equipment, but also easily causes corrosion and contamination problems of the device because the system is exposed to a highly corrosive and polluting environment, which in turn affects the quality of thin film deposition and the long-term stability of the equipment. Summary of the invention

[0004] The technical problem to be solved by the present invention is to solve one or more technical problems existing in the prior art and at least provide a beneficial choice or create conditions.

[0005] The solution of the present invention to its technical problem is: a slit-type gas supply device, which includes a gas supply device, and the slit-type gas supply device also includes a first diverter pipe and a first diffuser, the first diverter pipe is provided with a first gas inlet and multiple first spray holes all connected to the first diverter pipe, the first gas inlet is connected to the gas supply device through a pipeline, a first uniform gas space is provided in the first diffuser, all the first spray holes are connected to the first uniform gas space, and a first slit connected to the first uniform gas space is provided on the first diffuser, and the first slit is used to release the gas in the first uniform gas space.

[0006] The beneficial effects of the present invention are as follows: the gas supply equipment transports gas to the first diversion pipe through a connecting pipeline, and performs preliminary diversion through a plurality of evenly distributed nozzles. After the gas is diffused and homogenized in the first diffuser, it is evenly released into the vacuum chamber through the slit to ensure even distribution of the gas. By adding a slit diffuser to the dotted and line-shaped gas outlet side, the uniformity of the released gas is improved, so that the gas outlet can be closer to the workpiece, thereby being able to accurately provide evenly distributed process gas to the workpiece, effectively avoiding the ineffective diffusion of process gas, not only improving the efficiency of gas use, but also saving precious space in the vacuum chamber.

[0007] As a further improvement of the above technical solution, the slit-type gas supply device also includes a second diffuser, which is arranged on the first diffuser or the first diverter pipe, and a second uniform gas space is provided in the second diffuser. The first slit connects the first uniform gas space and the second uniform gas space, and a second slit connecting the second uniform gas space is provided on the second diffuser, and the second slit is used to release the gas in the second uniform gas space.

[0008] As a further improvement of the above technical solution, the slit-type gas supply device also includes a diffusion group, which is arranged on the first diffuser or the first diverter pipe. The diffusion group includes a plurality of third diffusers connected end to end, each of the third diffusers is provided with a third uniform gas space, the first slit connects the first uniform gas space and the adjacent third uniform gas space, a third slit is provided on the third diffuser, and adjacent third diffusers are connected to two adjacent third uniform gas spaces through the third slit, and the third slit at the end is used to release the gas in the third uniform gas space.

[0009] As a further improvement of the above technical solution, a rectifying plate is provided in the first uniform air space, and the rectifying plate is arranged on the first diffuser. An air intake gap is formed between the rectifying plate and the inner wall of the first diffuser, so that the gas changes its flow direction in the first uniform air space and is evenly distributed.

[0010] As a further improvement of the above technical solution, the first slit includes a plurality of first flow channels, adjacent first flow channels are connected end to end, and turns are provided between adjacent first flow channels.

[0011] As a further improvement of the above technical solution, the extension directions of the first spray hole and the first slit on the horizontal plane are both inclined in the clockwise direction or in the counterclockwise direction.

[0012] As a further improvement of the above technical solution, the gas output direction of the first nozzle forms an angle α with the tangent of the inner wall of the first diffuser, and the gas output direction of the first slit forms an angle β with the tangent of the inner wall of the first diffuser, α is 0 to 60°, and β is 0 to 60°.

[0013] As a further improvement of the above technical solution, the first diversion pipe includes a main channel and a multi-stage diversion channel, the air inlet end of the main channel is connected to the first gas inlet, the air inlet ends of all the diversion channels are connected to the air outlet end of the previous channel, and the air outlet end of the final diversion channel is connected to the first nozzle.

[0014] As a further improvement of the above technical solution, the slit-type gas supply device also includes a second diverter pipe, which is arranged on one side of the first diffuser. The second diverter pipe is provided with a second gas inlet and a plurality of second spray holes. The second gas inlet is connected to the gas supply equipment through a pipeline, and the second spray holes connect the internal space of the second diverter pipe and the first uniform gas space.

[0015] As a further improvement of the above technical solution, the first diverter tube is in a circular or polygonal shape, the first diverter tube encloses a workpiece placement space, the first diffuser is arranged in the workpiece placement space, the first diffuser is connected to the first diverter tube through the first nozzle, and the first slit is arranged on the first diffuser on a side close to the workpiece placement space.

[0016] A coating device comprises the slit-type gas supply device as described in any one of the above items.

[0017] The beneficial effect of the present invention is that the slit-type gas supply device can achieve highly uniform gas distribution during the coating process, significantly improving the quality and consistency of the coating layer. Specifically, the combination of the diffuser and the slit structure allows the gas to be homogenized and rectified multiple times before being released, effectively reducing airflow turbulence and uneven velocity. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a schematic diagram of the assembly of the first shunt pipe and the first diffuser of the first embodiment of the present invention;

[0019] Figure 2 is an assembly cross-sectional view of a first shunt pipe and a first diffuser according to a first embodiment of the present invention;

[0020] Figure 3 is a schematic diagram of the assembly of a first shunt pipe, a first diffuser and a second diffuser in a second embodiment of the present invention;

[0021] Figure 4 is an assembly cross-sectional view of a first shunt pipe, a first diffuser, and a second diffuser in a second embodiment of the present invention;

[0022] Figure 5 is a schematic diagram of the assembly of the first shunt pipe and the first diffuser of the fourth embodiment of the present invention;

[0023] Figure 6 is an assembly cross-sectional view of a first shunt pipe and a first diffuser according to a fourth embodiment of the present invention;

[0024] Figure 7 is an assembly cross-sectional view of a first shunt pipe and a first diffuser of a fifth embodiment of the present invention;

[0025] Figure 8is an assembly cross-sectional view of a first manifold and a first diffuser of a sixth embodiment of the present invention;

[0026] Fig. 9 is an assembly diagram of a first shunt pipe and a first diffuser of Embodiment 7 of the present invention;

[0027] Fig.10 is an assembly cross-sectional view of a first shunt pipe, a second shunt pipe, and a first diffuser according to an eighth embodiment of the present invention;

[0028] Fig.11 It is an assembly top view of the first diverter pipe and the first diffuser of the ninth embodiment of the present invention.

[0029] In the accompanying drawings: 1-first shunt pipe, 101-first gas inlet, 102-first spray hole, 2-first diffuser, 201-first slit, 202-rectifier plate, 3-second diffuser, 301-second slit, 4-second shunt pipe, 401-second gas inlet, 402-second spray hole. DETAILED DESCRIPTION

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the above briefly describes the drawings required for use in the description of the embodiments. Obviously, the drawings described are only part of the embodiments of the present invention, not all of the embodiments, and those skilled in the art can also obtain other design solutions and drawings based on these drawings without creative work.

[0031] The following will clearly and completely describe the concept, specific structure and technical effects of the present invention in combination with the embodiments and drawings, so as to fully understand the purpose, characteristics and effects of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, other embodiments obtained by technicians in this field without creative work are all within the scope of protection of the present invention. In addition, all the connection / connection relationships mentioned in the text do not refer to the direct connection of components, but refer to the formation of a better connection structure by adding or reducing connection accessories according to the specific implementation situation. The various technical features in the present invention can be combined interchangeably without conflicting with each other.

[0032] By using PVD, CVD and dry etching process technologies, specific film materials required for various thin film devices can be accurately deposited or partially removed on semiconductor substrates. These processes are crucial for the manufacture of microelectronic devices, optoelectronic devices and other thin film technology applications.

[0033] At present, the traditional gas supply device usually adopts the two-way flow method in the plane. This design allows the gas to be evenly distributed to different areas from a point-like gas source. However, this gas distribution system often occupies a large vacuum chamber space, which not only reduces the space utilization of the equipment, but also easily causes corrosion and contamination problems of the device because the system is exposed to a highly corrosive and polluting environment, which in turn affects the quality of thin film deposition and the long-term stability of the equipment.

[0034] To this end, the present invention proposes a slit-type gas supply device. In the first embodiment, referring to Figure 1-2 , which includes a gas supply device, the slit-type gas supply device also includes a first shunt pipe 1 and a first diffuser 2, the first shunt pipe 1 is provided with a first gas inlet 101 and a plurality of first spray holes 102 all connected to the first shunt pipe 1, the first gas inlet 101 is connected to the gas supply device through a pipeline, a first uniform gas space is provided in the first diffuser 2, all the first spray holes 102 are connected to the first uniform gas space, a first slit 201 connected to the first uniform gas space is provided on the first diffuser 2, and the first slit 201 is used to release the gas in the first uniform gas space.

[0035] The gas supply equipment transports gas to the first diversion pipe 1 through a connecting pipeline, and performs preliminary diversion through a plurality of evenly distributed nozzles. After being diffused and homogenized in the first diffuser 2, the gas is evenly released into the vacuum chamber through the slit to ensure even distribution of the gas. By adding a slit diffuser to the dotted and line-shaped gas outlet side, the uniformity of the released gas is improved, so that the gas outlet can be closer to the workpiece, thereby being able to accurately provide evenly distributed process gas to the workpiece, effectively avoiding the ineffective diffusion of process gas, which not only improves the efficiency of gas use, but also saves precious space in the vacuum chamber.

[0036] When in use, the gas supply equipment provides the required gas and transports it to the first gas inlet 101 of the first diverter pipe 1 through a connecting pipe. The gas entering the first diverter pipe 1 is initially diverted through multiple first nozzles 102. The nozzles are evenly distributed on the diverter pipe to ensure that the gas can flow evenly to the first diffuser 2. The gas enters the first uniform gas space of the first diffuser 2 from the nozzles. In the uniform gas space, the gas undergoes a diffusion and homogenization process to ensure that it is evenly distributed before release. The homogenized gas is evenly released into the vacuum chamber through the first slit 201 on the first diffuser 2.

[0037] During the thin film deposition process, uneven gas distribution may lead to uneven film thickness, affecting the performance and reliability of the product. Figure 3-4The slit-type gas supply device further includes a second diffuser 3, which is arranged on the first diffuser 2 or the first manifold 1. A second uniform gas space is arranged in the second diffuser 3. The first slit 201 connects the first uniform gas space and the second uniform gas space. A second slit 301 connecting the second uniform gas space is arranged on the second diffuser 3. The second slit 301 is used to release the gas in the second uniform gas space. After the first uniform gas space of the first diffuser 2 is preliminarily homogenized, the gas enters the second uniform gas space of the second diffuser 3 through the first slit 201 for further homogenization. This double homogenization process can more effectively reduce the concentration gradient in the gas, so that the gas can achieve higher uniformity before being released into the vacuum chamber. By adding the second diffuser 3 and the second gas homogenization space, the local concentration difference of the gas during release can be further reduced, thereby improving the uniformity and consistency of thin film deposition or etching. The introduction of the second diffuser 3 and the second slit 301 provides more possibilities for adjusting the gas flow rate. By changing the width, number or arrangement of the first slit 201 and the second slit 301, the gas flow rate and distribution can be flexibly adjusted to meet different process requirements.

[0038] Preferably, a second diffuser 3 is added at the gas outlet of the first diffuser 2, and a plurality of third spray holes are provided at the gas outlet of the first diffuser 2, and the first uniform gas space in the first diffuser 2 and the second uniform gas space in the second diffuser 3 are connected through the third spray holes.

[0039] During the film deposition process, uneven gas distribution may lead to uneven film thickness, affecting the performance and reliability of the product. Therefore, in one embodiment, the slit-type gas supply device also includes a diffusion group, which is arranged on the first diffuser 2 or the first shunt pipe 1, and the diffusion group includes a plurality of third diffusers connected end to end, each of the third diffusers is provided with a third uniform gas space, the first slit 201 connects the first uniform gas space and the adjacent third uniform gas space, and the third diffuser is provided with a third slit, and the adjacent third diffusers are connected to the adjacent two third uniform gas spaces through the third slit, and the third slit at the end is used to release the gas in the third uniform gas space. The first slit 201 connects the first uniform gas space with the adjacent third uniform gas space, so that the gas can flow from the first uniform gas space to the first third uniform gas space in the diffusion group, and the third slit on each third diffuser connects the adjacent two third uniform gas spaces, so that the gas can flow step by step and evenly in the diffusion group, and the slit on the third diffuser at the end of the diffusion group releases the evenly distributed gas into the external environment. Through the multi-stage (i.e., multiple third diffusers) and slit design, the gas can be fully mixed and evenly distributed in each uniform gas space, thereby ensuring that the gas released from the third slit at the end is highly uniform. The design of the multi-stage diffuser helps to stabilize the flow rate and pressure of the gas, and can maintain a relatively stable gas supply state even when the pressure or flow rate of the gas source changes. By increasing or decreasing the number of third diffusers, the scale of the diffusion group and the gas supply capacity can be easily adjusted to adapt to different application scenarios and needs.

[0040] The gas ejected from the first nozzle 102 may form an uneven airflow in the first uniform air space, resulting in a large local concentration difference of the gas in the first uniform air space, which affects the uniformity of the gas subsequently released through the slit to the vacuum chamber or the workpiece. Figure 5-6 , a rectifying plate 202 is provided in the first uniform air space, and the rectifying plate 202 is arranged on the first diffuser 2, and an air intake gap is formed between the rectifying plate 202 and the inner wall of the first diffuser 2, so that the gas changes its flow direction in the first uniform air space and is evenly distributed. The rectifying plate 202 can guide the gas ejected from the first spray hole 102 to form a more uniform airflow in the air intake gap, which helps to reduce the local concentration difference of the gas in the first uniform air space, thereby improving the uniformity of gas distribution. The rectifying effect helps to reduce the eddy current and turbulence of the gas during the flow process, reduce energy loss, and improve the utilization efficiency of the gas.

[0041] Preferably, the rectifying plate 202 is configured as an arc-shaped plate. The design of the rectifying plate 202 takes into account the flow characteristics and pressure distribution of the gas. By adjusting the shape, position and size of the air intake gap of the rectifying plate 202, the rectifying effect of the gas can be further optimized.

[0042] If the gas does not have enough time and opportunity to be fully mixed and diffused, it may cause a large local concentration difference when the gas is released into the vacuum chamber or on the workpiece, affecting the uniformity and consistency of thin film deposition or etching. Figure 7 The first slit 201 includes a plurality of first flow channels, adjacent first flow channels are connected end to end, and there are turns between adjacent first flow channels. The tortuous slit structure greatly extends the flow path of the gas in the first uniform gas space, provides more mixing and diffusion opportunities for the gas, and enables the gas to more fully interact with other gases in the first uniform gas space during the flow process, thereby achieving a more uniform distribution. The gas undergoes multiple direction changes and speed adjustments when passing through the slit, which helps to break any concentration gradient in the gas and further promote the homogenization of the gas.

[0043] Traditional vertical or parallel designs often easily cause gas turbulence at the nozzle outlet, affecting the uniform distribution and stability of the gas. Therefore, in one embodiment, the extension directions of the first nozzle 102 and the first slit 201 on the horizontal plane are both inclined clockwise or counterclockwise. The inclined slit structure helps to optimize the release angle of the gas, so that the gas can cover the entire uniform gas space more smoothly and evenly when released, which can improve the utilization efficiency of the gas, reduce the waste caused by uneven gas distribution, help reduce the resistance of the gas during the release process, reduce energy consumption, and improve the energy efficiency of the entire device.

[0044] Preferably, the inclination angle can be adjusted according to actual application requirements to ensure that the gas can form a more ideal flow trajectory when entering the first uniform gas space. Through this design, not only can the turbulence of the gas at the nozzle outlet be effectively reduced, but also the uniform distribution effect of the gas in the uniform gas space can be further improved. In addition, the inclined slit structure also helps to optimize the release angle of the gas, so that the gas can be more stable when released, thereby improving the working efficiency and gas utilization efficiency of the entire device.

[0045] The irregular flow of gas inside the diffuser will affect the diffusion effect and uniform distribution of the gas. Figure 8, the gas output direction of the first nozzle 102 forms an angle α with the tangent of the inner wall of the first diffuser 2, and the gas output direction of the first slit 201 forms an angle β with the tangent of the inner wall of the first diffuser 2, α is 0-60°, and β is 0-60°. By controlling the size of the angles α and β, the gas can be guided more evenly during the entry and release process, thereby improving the diffusion effect of the gas, helping the gas to form a more even distribution inside the diffuser, and reducing the phenomenon of local concentration being too high or too low. When the angle α is appropriately increased, the gas will be guided more evenly when entering the diffuser, which helps to reduce the collision and turbulence of the gas at the nozzle outlet and reduce the pressure loss. The appropriate increase in the angle β helps the gas to diffuse more smoothly into the entire diffuser when released, improving the uniformity and stability of the gas.

[0046] When the gas enters the nozzle, it may generate turbulence and eddy current due to uneven flow velocity or sudden change in direction, which will not only increase the energy loss of the gas, but also destroy the laminar flow state of the gas, resulting in uneven distribution of the gas at the nozzle. Fig. 9 The first shunt pipe 1 includes a main channel and a multi-stage shunt channel. The air inlet end of the main channel is connected to the first gas inlet 101, the air inlet ends of all the shunt channels are connected to the air outlet end of the previous channel, and the air outlet end of the final shunt channel is connected to the first nozzle 102. By introducing a multi-stage channel structure, the gas undergoes more detailed distribution and adjustment before entering the nozzle, which helps to reduce the turbulence and eddy flow of the gas at the nozzle, so that the gas can be diffused to the target area more smoothly and evenly. The design of the multi-stage channel also increases the flow path of the gas in the shunt pipe, prolongs the residence time of the gas, and is conducive to more complete mixing and uniform distribution of the gas.

[0047] Some processes require precise proportioning and mixing of multiple gases to achieve specific process effects. In processes that require the treatment of multiple gases, multiple treatments will increase production costs and reduce production efficiency. Fig.10The slit-type gas supply device also includes a second shunt pipe 4, which is arranged on one side of the first diffuser 2. The second shunt pipe 4 is provided with a second gas inlet 401 and a plurality of second spray holes 402. The second gas inlet 401 is connected to the gas supply device through a pipeline, and the second spray holes 402 connect the internal space of the second shunt pipe 4 and the first uniform gas space. The first diffuser 2 is not only connected to the first spray hole 102 of the first shunt pipe 1, but also arranged on one side of the second shunt pipe 4, so that the second spray hole 402 can also introduce the gas it transports into the first uniform gas space, so that the slit-type gas supply device can process two or more different gases at the same time. Each gas enters its own shunt pipe separately, and enters the same diffuser through its own spray hole system. Different gases are mixed in the diffuser to form the required gas atmosphere or chemical reaction conditions. This multi-gas mixing capability provides great convenience for various complex gas processing processes.

[0048] Taking the four-level diversion channel as an example, a two-diversion pipe is set in the diversion channel of the first level; two two-diversion pipes are set in the diversion channel of the second level, and the air inlet end of the two-diversion pipe of the second level is connected to the air outlet end of the two-diversion pipe of the first level in a one-to-one correspondence; four two-diversion pipes are set in the diversion channel of the third level, and similarly, the air inlet ends of the four third-level two-diversion pipes are connected to the air outlet ends of the two second-level two-diversion pipes in a one-to-one correspondence; eight two-diversion pipes are set in the diversion channel of the fourth level, and similarly, the air inlet ends of the eight fourth-level two-diversion pipes are connected to the air outlet ends of the four third-level two-diversion pipes in a one-to-one correspondence.

[0049] When the workpiece is round, it is difficult to ensure that the gas can evenly cover the entire workpiece surface, which may affect the process effect and product quality. Fig.11 , the first shunt pipe 1 is in the shape of a ring or a polygon, the first shunt pipe 1 encloses a workpiece delivery space, the first diffuser 2 is arranged in the workpiece delivery space, the first diffuser 2 is connected to the first shunt pipe 1 through the first spray hole 102, and the first slit 201 is arranged on the first diffuser 2 on the side close to the workpiece delivery space. The first shunt pipe 1 is designed to be in the shape of a ring, surrounding and forming a central area, namely the workpiece delivery space, so that the gas can be evenly and efficiently supplied around the circular workpiece, the first slit 201 is arranged on the side of the first diffuser 2 close to the workpiece delivery space, namely the inner side of the ring, when the gas passes through the shunt pipe and the diffuser and reaches the slit, it can be directly and evenly sprayed onto the workpiece. By designing the shunt pipe and the diffuser to be in the shape of a ring and forming an installation space around the workpiece, the waste of gas can be minimized, the gas can be directly sprayed onto the workpiece, and the ineffective flow in the pipeline and space is reduced.

[0050] A coating device comprises the slit-type gas supply device as described in any one of the above items.

[0051] The slit-type gas supply device can achieve highly uniform gas distribution during the coating process, significantly improving the quality and consistency of the coating layer. Specifically, the combination of the diffuser and the slit structure allows the gas to be homogenized and rectified multiple times before release, effectively reducing airflow turbulence and uneven velocity.

[0052] The preferred embodiments of the present invention are described in detail above, but the present invention is not limited to the embodiments. Those skilled in the art may make various equivalent modifications or substitutions without violating the spirit of the present invention. These equivalent modifications or substitutions are all included in the scope defined by the claims of this application.

Claims

1. A slit-type gas supply device, comprising a gas supply device, characterized in that: The slit-type gas supply device further comprises a first shunt pipe (1) and a first diffuser (2); the first shunt pipe (1) is provided with a first gas inlet (101) and a plurality of first spray holes (102) all connected to the first shunt pipe (1); the first gas inlet (101) is connected to the gas supply device via a pipeline; a first uniform gas space is provided in the first diffuser (2); all the first spray holes (102) are connected to the first uniform gas space; a first slit (201) connected to the first uniform gas space is provided on the first diffuser (2); the first slit (201) is used to release gas in the first uniform gas space; The extension directions of the first spray hole (102) and the first slit (201) on the horizontal plane are both inclined in the clockwise direction or in the counterclockwise direction; The gas output direction of the first spray hole (102) forms an angle α with the tangent line of the inner wall of the first diffuser (2), and the gas output direction of the first slit (201) forms an angle β with the tangent line of the inner wall of the first diffuser (2), α is 0 to 60 degrees, and β is 0 to 60 degrees.

2. A slit type gas supply device according to claim 1, characterized in that: The slit-type gas supply device further comprises a second diffuser (3), the second diffuser (3) being arranged on the first diffuser (2) or the first shunt pipe (1), a second uniform gas space being arranged in the second diffuser (3), the first slit (201) being connected to the first uniform gas space and the second uniform gas space, a second slit (301) being connected to the second uniform gas space being arranged on the second diffuser (3), the second slit (301) being used to release gas in the second uniform gas space.

3. A slit type gas supply device according to claim 1, characterized in that: The slit-type gas supply device further comprises a diffusion group, the diffusion group being arranged on the first diffuser (2) or the first shunt pipe (1), the diffusion group comprising a plurality of third diffusers connected end to end, each of the third diffusers being provided with a third uniform gas space, the first slit (201) connecting the first uniform gas space and the adjacent third uniform gas space, the third diffuser being provided with a third slit, the adjacent third diffusers being connected to two adjacent third uniform gas spaces via the third slit, and the third slit at the end being used to release the gas in the third uniform gas space.

4. The slit type gas supply device according to claim 1, characterized in that: A rectifying plate (202) is provided in the first uniform air space, the rectifying plate (202) being arranged on the first diffuser (2), and an air intake gap is formed between the rectifying plate (202) and the inner wall of the first diffuser (2), so that the gas changes its flow direction in the first uniform air space and is evenly distributed.

5. The slit type gas supply device according to claim 1, characterized in that: The first slit (201) comprises a plurality of first flow channels, adjacent first flow channels are connected end to end, and turns are provided between adjacent first flow channels.

6. The slit type gas supply device according to claim 1, characterized in that: The first flow diversion pipe (1) comprises a main channel and a multi-stage flow diversion channel, the air inlet end of the main channel is connected to the first gas inlet (101), the air inlet ends of all the flow diversion channels are connected to the air outlet end of the preceding channel, and the air outlet end of the final flow diversion channel is connected to the first spray hole (102).

7. The slit type gas supply device according to claim 1, characterized in that: The slit-type gas supply device further comprises a second shunt pipe (4), the second shunt pipe (4) being arranged on one side of the first diffuser (2), the second shunt pipe (4) being provided with a second gas inlet (401) and a plurality of second spray holes (402), the second gas inlet (401) being connected to the gas supply device via a pipeline, and the second spray holes (402) being connected to the internal space of the second shunt pipe (4) and the first uniform gas space.

8. The slit type gas supply device according to claim 1, characterized in that: The first flow diversion pipe (1) is in the shape of a ring or a polygon, the first flow diversion pipe (1) encloses a workpiece placement space, the first diffuser (2) is arranged in the workpiece placement space, the first diffuser (2) is connected to the first flow diversion pipe (1) through the first spray hole (102), and the first slit (201) is arranged on a side of the first diffuser (2) close to the workpiece placement space.

9. A coating device, characterized in that: It comprises the slit-type gas supply device as described in any one of claims 1 to 8.

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