Semiconductor device

Abstract

Embodiments provide a semiconductor device capable of suppressing occurrence of defects. According to one embodiment, a semiconductor device includes first and second conductive members, a semiconductor chip, a conductive connection plate, first and second conductive bonding materials, and a resin portion. The second conductive component comprises a first part and a second part. The first portion is separated from the first conductive feature in the first direction. The second portion extends and protrudes from an end portion of the first portion in the second direction and includes a lead portion. The semiconductor chip is provided between the first portion and the first conductive member in the first direction, and is electrically connected to the first conductive member. The connection plate is disposed between the semiconductor chip and the first portion in the first direction. The first bonding material is located between the semiconductor chip and the connecting plate. The second bonding material is located between the first portion and the connecting plate. The resin portion covers the semiconductor chip, the connection plate, and the first portion. A portion of the lead portion and a portion of the first conductive member are exposed from the resin portion.

Description

[0001] Reference to related applications

[0002] This application claims the priority of Japanese Patent Application No. 2023-156394 (filing date: September 21, 2023) as a basic application. The present application incorporates all the contents of the basic application by reference. Technical Field

[0003] Embodiments of the present invention relate to a semiconductor device. Background Art

[0004] There is a semiconductor device (semiconductor package) in which a semiconductor chip is sealed. A conductive component including a lead is connected to the semiconductor chip using a conductive bonding material such as solder. In such a semiconductor device, peeling sometimes occurs in the bonding material that electrically connects the semiconductor chip to the conductive component. For example, in the manufacturing process of the semiconductor device, the load received from the fixture is transmitted to the lead, and peeling occurs in the solder on the semiconductor chip. As a result, the characteristics of the semiconductor device may be reduced. Summary of the invention

[0005] An object of the present invention is to provide a semiconductor device capable of suppressing the occurrence of malfunctions.

[0006] A semiconductor device of an embodiment includes a first conductive component, a second conductive component, a semiconductor chip, a conductive connecting plate, a conductive first bonding material, a conductive second bonding material, and a resin portion. The second conductive component includes a first portion and a second portion. The first portion is separated from the first conductive component in a first direction. The second direction intersects with the first direction. The second portion extends from the end of the first portion in the second direction and includes a lead portion. The semiconductor chip is disposed between the first portion and the first conductive component in the first direction and is electrically connected to the first conductive component. The connecting plate is disposed between the semiconductor chip and the first portion in the first direction. The first bonding material is located between the semiconductor chip and the connecting plate and electrically connects the semiconductor chip to the connecting plate. The second bonding material is located between the first portion and the connecting plate and electrically connects the first portion to the connecting plate. The resin portion covers the semiconductor chip, the connecting plate, and the first portion. A portion of the lead portion and a portion of the first conductive component are exposed from the resin portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 It is a schematic perspective view illustrating the semiconductor device according to the first embodiment.

[0008] Figure 2It is a schematic plan view illustrating the semiconductor device according to the first embodiment.

[0009] Figure 3 This is a schematic perspective view illustrating a part of the semiconductor device according to the first embodiment.

[0010] Figure 4 This is a schematic plan view illustrating a portion of the semiconductor device according to the first embodiment.

[0011] Figure 5 This is a schematic cross-sectional view illustrating a portion of the semiconductor device according to the first embodiment.

[0012] Figure 6 (a) is a schematic cross-sectional view illustrating a semiconductor device of a reference example, Figure 6 (b) is a schematic cross-sectional view of a semiconductor device according to an exemplary embodiment.

[0013] Figure 7 It is a graph diagram illustrating the characteristics of a semiconductor device.

[0014] Figure 8 (a)~ Figure 8 (c) is a schematic diagram illustrating the manufacturing process of the semiconductor device according to the first embodiment.

[0015] Fig. 9 This is a schematic cross-sectional view illustrating a portion of another semiconductor device according to the first embodiment.

[0016] Fig.10 It is a schematic plan view illustrating a part of the semiconductor device according to the second embodiment.

[0017] Fig.11 This is a schematic cross-sectional view illustrating a portion of a semiconductor device according to a second embodiment.

[0018] Fig.12 (a)~ Fig.12 (c) is a schematic cross-sectional view illustrating a manufacturing process of the second conductive component according to the embodiment.

[0019] Fig.13 This is a schematic cross-sectional view illustrating a portion of another semiconductor device according to the second embodiment.

[0020] Description of Reference Numerals

[0021] 10: first conductive component, 10b: lower surface, 10e: end, 10r, 10s: side, 10t: upper surface, 10ta, 10tb: end, 11, 12: protrusion, 20: second conductive component, 21: first portion, 21e, 21f: end, 21g: outer edge, 22: second portion, 23: lead portion, 23e: front end, 23f: rear end, 23t: terminal, 24: middle portion, 25: first folded portion, 25a, 25b: end, 26: second folded portion, 26a, 26b: end, 30: third conductive component, 31: connecting portion, 33: lead portion, 40: connecting plate, 40b: lower surface, 40e, 40f: end, 40t: upper surface, 51: first conductive component A bonding material, 51e: end, 52: a second bonding material, 52e: end, 60: a semiconductor chip, 61, 62, 63: electrodes, 62g: an outer edge, 70: a resin portion, 70p, 70q, 70r, 70s: a side, 70t: an upper surface, 71, 72: a recess, 100 to 104, 190: a semiconductor device, Df: a folding direction, M1: a lower mold, M1a: a lower portion, M1b: a convex portion, M2: an upper mold, M2a: an upper portion, M2b, Mc2: a convex portion, P1: a metal plate, Wp: a peeling width, f1: a first surface, f1e: an end, f2: a second surface, g1, g2: a groove, gb: a bottom, gc1, gc2: a side, r51, r52: an end, θ, φ: an angle. DETAILED DESCRIPTION

[0022] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0023] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the size between parts, etc. are not necessarily the same as in reality. Even when the same part is shown, the mutual size and ratio may be shown differently depending on the drawings.

[0024] In the present specification and each drawing, the same reference numerals are given to the same elements as those already described, and detailed description thereof will be appropriately omitted.

[0025] (First Embodiment)

[0026] Figure 1 It is a schematic perspective view illustrating the semiconductor device according to the first embodiment.

[0027] Figure 2 It is a schematic plan view illustrating the semiconductor device according to the first embodiment.

[0028] like Figure 1 as well as Figure 2As shown, the semiconductor device 100 according to the embodiment includes a first conductive member 10 , a second conductive member 20 , a third conductive member 30 , and a resin portion 70 .

[0029] Figure 3 This is a schematic perspective view illustrating a part of the semiconductor device according to the first embodiment.

[0030] Figure 4 This is a schematic plan view illustrating a portion of the semiconductor device according to the first embodiment.

[0031] Figure 5 This is a schematic cross-sectional view illustrating a portion of the semiconductor device according to the first embodiment.

[0032] Figure 3 to Figure 5 Illustration of the resin portion 70 is omitted, and the internal structure of the resin portion 70 is shown. Figure 5 Show Figure 3 The cross section along the A-B line is shown.

[0033] For example Figure 5 As shown, the semiconductor device 100 further includes a semiconductor chip 60 , a connection board 40 , a first bonding material 51 , and a second bonding material 52 .

[0034] The first conductive member 10 is a conductive substantially rectangular flat plate extending along the XY plane. The second conductive member 20 includes a conductive first portion 21 and a conductive second portion 22 .

[0035] In the description of the embodiment, an XYZ orthogonal coordinate system is used. The direction from the first conductive component 10 toward the first part 21 is set to the Z direction (first direction). Two directions perpendicular to the Z direction and orthogonal to each other are set to the X direction (second direction) and the Y direction (third direction). In addition, for the sake of explanation, the direction from the first conductive component 10 toward the first part 21 is called "up", and the opposite direction is called "down". These directions are based on the relative positional relationship between the first conductive component 10 and the first part 21 and are independent of the direction of gravity. The Z direction is, for example, a direction perpendicular to the upper surface of the first conductive component 10.

[0036] For example Figure 5 As shown, the first portion 21 is separated from the first conductive component 10 in the Z direction. The first portion 21 is a conductive flat plate extending along the XY plane. The second portion 22 extends from an end 21e of the first portion 21 in the X direction. The second portion 22 is conductive and includes a lead portion 23 and an intermediate portion 24.

[0037] The lead portion 23 extends in the X direction. The lead portion 23 is branched into a plurality of terminals 23t extending in the X direction at the front end side (the side opposite to the first portion 21) (see Figure 3 as well as Figure 4 The middle portion 24 connects the lead portion 23 and the end portion 21e of the first portion 21. The middle portion 24 is located between the lead portion 23 and the first portion 21 in the X direction. The middle portion 24 is inclined downward from the lead portion 23 toward the first portion 21.

[0038] The semiconductor chip 60 is located between the first conductive component 10 and the first portion 21 in the Z direction. In addition, "the first element is located between the second element and the third element in a certain direction" means that the position of the first element in the corresponding direction is between the position of the second element in the corresponding direction and the position of the third element in the corresponding direction. The semiconductor chip 60 is electrically connected to the first conductive component 10.

[0039] In this example, the semiconductor chip 60 is a semiconductor chip including a vertical MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Figure 5 As shown, the semiconductor chip 60 has an electrode 61 provided on the lower surface of the semiconductor chip 60 . The electrode 61 is, for example, a drain electrode of a MOSFET. The electrode 61 is formed on the entire lower surface of the semiconductor chip 60 .

[0040] For example, a conductive bonding material (for example, solder) (not shown) is provided between the first conductive member 10 and the electrode 61 . The bonding material is in contact with the first conductive member 10 and the electrode 61 , and electrically connects the first conductive member 10 and the electrode 61 .

[0041] The connecting plate 40 is located between the semiconductor chip 60 and the first portion 21 in the Z direction. The connecting plate 40 is conductive and is in the shape of a flat plate extending along the XY plane. Figure 5 As shown, the connection plate 40 has a lower surface 40 b and an upper surface 40 t. The lower surface 40 b is in contact with the first bonding material 51 , and the upper surface 40 t is in contact with the second bonding material 52 .

[0042] No components other than the connection plate 40, such as the resin portion 70, are arranged between the upper surface 40t and the lower surface 40b of the connection plate 40. That is, the connection plate 40 is continuous from the upper surface 40t to the lower surface 40b between the upper surface 40t and the lower surface 40b. In other words, the connection plate 40 is continuous from the upper surface 40t to the lower surface 40b in the Z direction within a range overlapping the upper surface 40t and the lower surface 40b in the Z direction.

[0043] In addition, the plate (flat plate) may not only have a flat surface (upper surface 40t, lower surface 40b, etc.) but may also have a surface with irregularities.

[0044] The first bonding material 51 is located between the semiconductor chip 60 and the connection board 40. The first bonding material 51 is conductive and electrically connects the semiconductor chip 60 and the connection board 40. The first bonding material 51 is in contact with the semiconductor chip 60 and the connection board 40.

[0045] More specifically, the first bonding material 51 and the electrode 62 of the semiconductor chip 60 (see Figure 4 ) and the connecting plate 40. Figure 4 As shown, an electrode 62 and an electrode 63 are provided on a part of the upper surface of the semiconductor chip 60. The area of ​​the electrode 62 is larger than the area of ​​the electrode 63. The electrode 62 is, for example, a source electrode of a MOSFET, and the electrode 63 is, for example, a gate electrode of the MOSFET.

[0046] like Figure 5 As shown, the second bonding material 52 is located between the first portion 21 and the connection plate 40. The second bonding material 52 is conductive and electrically connects the first portion 21 and the connection plate 40. The second bonding material 52 is connected to the first portion 21 and the connection plate 40.

[0047] For example Figure 4 As shown in FIG. 1 , the planar shape of the first portion 21 is substantially the same as the planar shape of the electrode 62. More specifically, Figure 4 In such a plan view, the outer edge 21g of the first portion 21 is located inside the outer edge 62g of the electrode 62 and extends along the outer edge 62g of the electrode 62. The area of ​​the first portion 21 is narrower than that of the electrode 62.

[0048] Similar to the planar shape of the first portion 21, the planar shape of the connecting plate 40, the planar shape of the first bonding material 51, and the planar shape of the second bonding material 52 are respectively substantially the same as the planar shape of the electrode 62. In a plan view, similar to the outer edge 21g of the first portion 21, the outer edge of the connecting plate 40, the outer edge of the first bonding material 51, and the outer edge of the second bonding material 52 are respectively located on the inner side of the outer edge 62g of the electrode 62 and extend along the outer edge 62g of the electrode 62.

[0049] The planar shape of the connecting plate 40, the planar shape of the first bonding material 51, and the planar shape of the second bonding material 52 may also be respectively the same as the planar shape of the first portion 21. When viewed from above, the outer edge of the connecting plate 40, the outer edge of the first bonding material 51, and the outer edge of the second bonding material 52 may also be respectively at the same position as the outer edge of the first portion 21.

[0050] In addition, for example Figure 3 as well as Figure 4As shown, the third conductive component 30 includes a connection portion 31 and a lead portion 33 electrically connected to the connection portion 31. An unillustrated conductive bonding material (e.g., solder) is provided between the electrode 63 and the connection portion 31. The bonding material is in contact with the electrode 63 and the connection portion 31, and electrically connects the electrode 63 and the connection portion 31. The lead portion 33 is arranged in the Y direction with the lead portion 23 and extends in the X direction.

[0051] The semiconductor chip 60, the first bonding material 51, the connection plate 40, the second bonding material 52, the first portion 21, and the connection portion 31 stacked in this manner are Figure 1 as well as Figure 2 The resin portion 70 shown covers.

[0052] like Figure 1 As shown, the resin portion 70 has an upper surface 70t, a side surface 70p, a side surface 70q, a side surface 70r, and a side surface 70s. The side surface 70q is a surface facing the X direction. The side surface 70p is a surface facing the side opposite to the side surface 70q. The side surface 70s is a surface facing the Y direction. The side surface 70r is a surface facing the side opposite to the side surface 70s.

[0053] The terminal 23t of the lead portion 23 of the second conductive member 20 protrudes from the side surface 70p. The terminal 23t extends from the side surface 70p in the direction opposite to the X direction. The resin portion 70 covers the middle portion 24 of the second conductive member 20 (see Figure 3 etc.), and does not cover the terminal 23t of the lead portion 23.

[0054] Likewise, the resin portion 70 covers the connection portion 31 of the third conductive member 30. The lead portion 33 of the third conductive member 30 protrudes from the side surface 70p.

[0055] like Figure 1 as well as Figure 2 As shown, the end 10e of the first conductive component 10 in the X direction extends from the side surface 70q in the X direction. The resin portion 70 does not cover the end 10e. In addition, the resin portion 70 does not cover the lower surface 10b of the first conductive component 10 (see Figure 1 ).

[0056] A recess 71 (groove) is provided in the center of the side surface 70r in the X direction. An end 10ta in the Y direction of the upper surface 10t of the first conductive member 10 is exposed from the resin portion 70 in the recess 71. The recess 71 extends from the upper surface 70t of the resin portion 70 in the Z direction to the end 10ta of the upper surface 10t.

[0057] Similarly, a recess 72 (groove) is provided in the center of the side surface 70s in the X direction. Figure 2) is exposed from the resin portion 70 at the recessed portion 72. The recessed portion 72 extends from the upper surface 70t of the resin portion 70 along the Z direction to the end portion 10tb of the upper surface 10t.

[0058] For example, the end portion 10ta of the upper surface 10t is the protrusion 11 of the first conductive member 10 (see Figure 4 ) on the upper surface. Figure 4 As shown, the convex portion 11 is provided on the side surface 10r of the first conductive component 10. For example, the end portion 10tb of the upper surface 10t is the convex portion 12 of the first conductive component 10 (see Figure 4 ) on the upper surface. Figure 4 As shown, the protrusion 12 is provided on the side surface 10s of the first conductive member 10. The side surface 10s is a side surface facing the Y direction, and the side surface 10r is a side surface facing the opposite side to the side surface 10s.

[0059] The resin portion 70 covers the first conductive member 10 except for the end portion 10 e , the end portion 10 ta , the end portion 10 tb , and the lower surface 10 b .

[0060] An example of the material of each element of the semiconductor device 100 is described.

[0061] For example, a metal material including at least one of copper, iron, and nickel is used for the first conductive member 10, the second conductive member 20, and the third conductive member 30. The metal material used for each conductive member may include, for example, an alloy of copper and iron or an alloy of iron and nickel.

[0062] For example, a metal material including at least one of copper, iron, and nickel is used for the connection plate 40. The metal material used for the connection plate 40 may include, for example, an alloy of copper and iron or an alloy of iron and nickel.

[0063] For example, solder is used as the first bonding material 51 and the second bonding material 52 .

[0064] The semiconductor chip 60 includes a semiconductor substrate containing a semiconductor material. As the semiconductor material, for example, silicon, silicon carbide, gallium nitride, or gallium arsenide can be cited. The semiconductor substrate may also contain n-type impurities (for example, arsenic or phosphorus) and p-type impurities (for example, boron). For example, the resistivity of the semiconductor substrate is higher than the resistivity of each of the first conductive component 10, the second conductive component 20, and the third conductive component 30. For example, at least one metal material selected from aluminum, nickel, and copper is used in each of the electrodes 61, 62, and 63 provided on the semiconductor chip 60.

[0065] The operation of the semiconductor device 100 will be described.

[0066] For example, a positive voltage relative to the electrode 62 (source electrode) is applied to the electrode 61 (drain electrode) of the semiconductor chip 60 via the first conductive component 10. The on / off of the transistor is controlled by the voltage applied to the electrode 63 (gate electrode) via the third conductive component 30. If the voltage of the electrode 63 relative to the electrode 62 exceeds the threshold voltage, the transistor formed on the semiconductor chip 60 is turned on. Thus, the on-current of the transistor flows from the component 10 via the electrode 61, the electrode 62, the first bonding material 51, the connecting plate 40, the second bonding material 52, and the first part 21 to the lead portion 23. When the voltage of the electrode 63 relative to the electrode 62 is below the threshold, the transistor is turned off and the above-mentioned on-current does not flow.

[0067] In addition, although the semiconductor chip 60 includes a MOSFET, the semiconductor element included in the semiconductor chip 60 is not limited thereto. For example, the semiconductor chip 60 may include an IGBT (Insulated Gate Bipolar Transistor). Alternatively, the electrode 61 may be a collector electrode of the IGBT, the electrode 62 may be an emitter electrode of the IGBT, and the electrode 63 may be a gate electrode of the IGBT.

[0068] According to the present embodiment, the occurrence of delamination in the first bonding material 51 can be suppressed, thereby suppressing the occurrence of a problem of the semiconductor device 100 such as an increase in on-resistance. The risk of a problem such as an increase in on-resistance can be reduced.

[0069] The lead portion 23 and the first conductive member 10 are sometimes subjected to a force that pulls the lead portion 23 and the first conductive member 10 apart from each other in the Z direction. For example, as described later, in the manufacturing process of the semiconductor device 100, before the semiconductor chip 60 is sealed with the resin portion 70, the first conductive member 10 is sometimes pressed downward while the position of the lead portion 23 is fixed in the mold. If such a force is applied, there is a possibility that peeling occurs in the second bonding material 52. That is, the second bonding material 52 may be peeled off from the connection plate 40 or the first portion 21.

[0070] As described above, the lead portion 23 extends in the X direction at the second portion 22 extending from the end of the first portion 21. In the state where the position of the lead portion 23 is fixed, if a force is applied to pull the lead portion 23 and the first conductive member 10 apart in the Z direction, for example Figure 5The illustrated region R (the end portion 52e of the second bonding material 52 on the lead portion 23 side) is prone to peeling of the second bonding material 52 and the second conductive component 20. When peeling occurs in the second bonding material 52 as described above, the force applied to the first bonding material 51 is mitigated, thereby suppressing the occurrence of peeling in the first bonding material 51. For example, the second bonding material 52 is sacrificed and peeling occurs, thereby absorbing the load and suppressing the peeling in the first bonding material 51.

[0071] By suppressing the occurrence of peeling in the first bonding material 51, it is possible to suppress the occurrence of a problem in the semiconductor device 100 such as an increase in on-resistance. Figure 6 (a) Figure 6 (b) and Figure 7 Provide explanation.

[0072] Figure 6 (a) is a schematic cross-sectional view illustrating a semiconductor device of a reference example, Figure 6 (b) is a schematic cross-sectional view of a semiconductor device according to an exemplary embodiment.

[0073] exist Figure 6 In the semiconductor device 190 of the reference example shown in (a), the connection plate 40 and the second bonding material 52 are not provided. In the semiconductor device 190 , the electrode 62 of the semiconductor chip 60 is electrically connected to the first portion 21 of the second conductive member 20 by the first bonding material 51 . Figure 6 The semiconductor device 101 of the embodiment shown in (b) includes the first conductive member 10 , the semiconductor chip 60 , the first bonding material 51 , the connection plate 40 , the second bonding material 52 , and the second conductive member 20 , similarly to the semiconductor device 100 described above.

[0074] like Figure 6 As shown in (a) of FIG. 1 , in the first bonding material 51 of the semiconductor device 190, the on-resistance is calculated when peeling occurs at the end r51 on the lead portion 23 side. Figure 6 As shown in (b), the on-resistance is calculated when peeling occurs at the end r52 on the lead portion 23 side in the second bonding material 52 of the semiconductor device 101. The peeling width Wp is the length in the X direction of the region where each bonding material is peeled. Figure 7 The calculation results are shown in .

[0075] Figure 7 It is a graph diagram illustrating the characteristics of a semiconductor device.

[0076] Figure 7 The increase ratio of the on-resistance when peeling occurs relative to the on-resistance when peeling does not occur (Wp=0) is illustrated. Figure 7] The cases where the peeling width Wp is 0 mm, 0.25 mm, 0.5 mm, 0.75 mm, and 1.0 mm are shown.

[0077] like Figure 7 As shown, for example, when the peeling width Wp is 0.25 mm, the increase rate of the on-resistance in the semiconductor device 190 is 1.72%, and the increase rate of the on-resistance in the semiconductor device 101 is 0.49%. For example, when the peeling width Wp is 1.0 mm, the increase rate of the on-resistance in the semiconductor device 190 is 17.18%, and the increase rate of the on-resistance in the semiconductor device 101 is 2.71%. In this way, in the embodiment, the increase of the on-resistance when the bonding material peels off can be suppressed. Therefore, the risk of the occurrence of a bad situation can be reduced.

[0078] For example, in the semiconductor device 190 of the reference example, if peeling occurs in the first bonding material 51, the path of the current flowing from the semiconductor chip 60 to the first bonding material 51 becomes narrower. As a result, the on-resistance increases. On the other hand, in the semiconductor device 101, even if peeling occurs in the second bonding material 52, the path of the current flowing from the semiconductor chip 60 to the first bonding material 51 will not become narrower. If peeling occurs in the second bonding material 52, for example, the path of the current flowing from the connecting plate 40 to the second bonding material 52 becomes narrower. If the path of the current to the second bonding material 52 becomes narrower, it is considered that, for example, the path through which the current flows in the connecting plate 40 in order to flow to the second bonding material 52 becomes longer. Here, since the connecting plate 40 is conductive, it is considered that the effect of the elongated current path is relatively small. As a result, it is considered that the increase in on-resistance can be suppressed.

[0079] Figure 8 (a)~ Figure 8 (c) is a schematic diagram illustrating the manufacturing process of the semiconductor device according to the first embodiment.

[0080] Figure 8 (a)~ Figure 8 (c) is a schematic side view illustrating a molding step of sealing the bonded semiconductor chip 60 and the like (the first conductive member 10 , the semiconductor chip 60 , the connection plate 40 , and the second conductive member 20 ) with the resin portion 70 .

[0081] like Figure 8 As shown in (a), the joined semiconductor chip 60 and the like are arranged above the lower mold M1. The lower mold M1 includes a lower portion M1a and a convex portion M1b extending upward from the lower portion M1a. The second conductive component 20 and the semiconductor chip 60 are arranged above the lower portion M1a. The lead portion 23 is in contact with the upper surface of the convex portion M1b.

[0082] like Figure 8As shown in (b) of FIG. 1 , the upper mold M2 is arranged above the bonded semiconductor chip 60 etc. That is, the bonded semiconductor chip 60 etc. is arranged between the lower mold M1 and the upper mold M2.

[0083] The upper mold M2 includes an upper portion M2a, a convex portion M2b, and a convex portion M2c. The convex portion M2b and the convex portion M2c extend downward from the upper portion M2a, respectively. A portion of the first conductive component 10, the semiconductor chip 60, the connecting plate 40, and the first portion 21 are arranged below the upper portion M2a. That is, a portion of the first conductive component 10, the semiconductor chip 60, the connecting plate 40, and the first portion 21 are arranged in the space between the lower portion M1a and the upper portion M2a.

[0084] The lead portion 23 is in contact with the lower surface of the protrusion M2b. That is, the lead portion 23 is clamped by the protrusion M1b and the protrusion M2b, and the position of the lead portion 23 is fixed. In addition, the lower end of the protrusion M2c of the upper mold M2 is in contact with the end 10ta of the upper surface 10t of the first conductive component 10. Similarly, the other protrusion M2c (not shown) of the upper mold M2 is in contact with the end 10tb (see Figure 2 ) are connected.

[0085] Then, the mold is closed. That is, the semiconductor chip 60 and the like to be bonded are pressed against the lower mold M1 by the upper mold M2. The first conductive component 10 is sometimes pressed downward at the end 10ta and the end 10tb by the convex portion M2c of the upper mold M2 and moves downward. Thus, for example, the lower surface 10b of the first conductive component 10 is in contact with the lower portion M1a of the lower mold M1. On the other hand, the lead portion 23 is clamped by the lower mold M1 (convex portion M1b) and the upper mold M2 (convex portion M2b), so it does not move. In this way, a force is applied to the lead portion 23 and the first conductive component 10 to pull the lead portion 23 and the first conductive component 10 apart from each other in the Z direction. Thus, for example, peeling occurs in the second bonding material 52. For example, when the distance in the Z direction between the lead portion 23 and the first conductive component 10 is shortened due to manufacturing deviations, peeling is likely to occur.

[0086] Then, if Figure 8 As shown in (b) of FIG. 1 , a resin material is injected into the space between the lower portion M1a and the upper portion M2a to form a resin portion 70. Then, as shown in FIG. Figure 8 As shown in (c) , the lower mold M1 and the upper mold M2 are separated from the resin portion 70 , and the semiconductor device 100 is manufactured.

[0087] Thus, in the manufacturing process of the semiconductor device 100, the first conductive component 10 is sometimes pressed downward relative to the lead portion 23. In this case, peeling sometimes occurs in the second bonding material 52. Even if peeling occurs in the second bonding material 52, the first portion 21 and the connecting plate 40 located above and below the second bonding material 52 are easy to flow current, so the increase in on-resistance can be suppressed. Thus, for example, the defective rate of the product can be reduced.

[0088] For example, the strength of the second bonding material 52 bonding the first portion 21 to the connecting plate 40 is lower than the strength of the first bonding material 51 bonding the semiconductor chip 60 to the connecting plate 40. As a result, for example, peeling is more likely to occur in the second bonding material 52 than in the first bonding material 51. The strength (resistance to breakage) of the bonding material is confirmed, for example, by a tensile strength test. For example, in a test of a bonding material bonding two bonding materials, the bonding body on one side is stretched in the Z direction in such a manner as to separate the bonding body on the other side, and the force at which the bonding material is broken is measured.

[0089] For example, the composition of the second bonding material 52 is different from the composition of the first bonding material 51. Thus, the strength of each bonding material can be adjusted. For example, the strength of the second bonding material 52 can be made lower than the strength of the first bonding material 51. As an example, the second bonding material 52 contains lead. The second bonding material 52, for example, contains lead solder (Pb5Sn). The first bonding material 51, for example, contains lead-free solder (Sn 3.0 Ag 0.5 Alternatively, the concentration of lead in the first bonding material 51 (mass %) is lower than the concentration of lead in the second bonding material 52 (mass %).

[0090] Fig. 9 This is a schematic cross-sectional view illustrating a portion of another semiconductor device according to the first embodiment.

[0091] Fig. 9 and Figure 5 Similarly, FIG. 2 shows a cross section of a portion of the semiconductor device 102. The semiconductor device 102 is arranged in a manner similar to that of FIG. Figure 5 The semiconductor device 100 shown is different.

[0092] like Fig. 9 As shown, the connection plate 40 has an end 40e and an end 40f in the X direction. The end 40e is an end on the lead portion 23 side. That is, in the X direction, the end 40e is located between at least a part of the lead portion 23 and the end 40f.

[0093] In this example, the second bonding material 52 is not in contact with the end 40e of the connection plate 40. For example, the solder forming the second bonding material 52 is not applied to the end 40e on the lead portion 23 side of the connection plate 40. Thus, for example, when a load is applied to the end 52e of the second bonding material 52, the load applied to the end 51e on the lead portion 23 side of the first bonding material 51 can be suppressed. The occurrence of peeling in the first bonding material 51 can be further suppressed.

[0094] The first bonding material 51 is in contact with the end 40e of the connection plate 40. For example, solder forming the first bonding material 51 is applied to the end 40e on the lead portion 23 side of the connection plate 40. This can suppress the occurrence of peeling in the first bonding material 51.

[0095] The first bonding material 51 and the second bonding material 52 are respectively connected to the end 40f of the connection plate 40. That is, for example, on the opposite side of the lead portion 23, the solder forming the first bonding material 51 and the second bonding material 52 is applied to the end 40f of the connection plate 40. Thus, on the opposite side of the lead portion 23, the first bonding material 51 and the second bonding material 52 can be prevented from peeling off.

[0096] For example, the width of the first bonding material 51 in the X direction is substantially the same as the width of the connection plate 40 in the X direction. The width of the second bonding material 52 in the X direction is narrower than the width of the connection plate 40 in the X direction. The width of the first portion 21 in the X direction may be substantially the same as the width of the second bonding material 52 in the X direction, or may be wider than the width of the second bonding material 52 in the X direction.

[0097] (Second Embodiment)

[0098] Fig.10 It is a schematic plan view illustrating a part of the semiconductor device according to the second embodiment.

[0099] Fig.11 This is a schematic cross-sectional view illustrating a portion of a semiconductor device according to a second embodiment.

[0100] Fig.11 Show Fig.10 The cross section along the C-D line is shown.

[0101] exist Fig.10 as well as Fig.11The semiconductor device 103 shown in the figure also includes the first conductive member 10, the semiconductor chip 60, the first bonding material 51, the second conductive member 20, the third conductive member 30, and the resin portion 70 (not shown) as in the semiconductor device 100. In the semiconductor device 103, the shape of the second conductive member 20 is different from that of the semiconductor device 100. In the semiconductor device 103, the connection plate 40 and the second bonding material 52 are not provided.

[0102] In this example, the first bonding material 51 is located between the second conductive component 20 (first portion 21) and the semiconductor chip 60, and electrically connects the second conductive component 20 and the semiconductor chip 60. The first bonding material 51 is connected to the first portion 21 and the semiconductor chip 60. The resin portion 70 (not shown) is connected to the semiconductor chip 60 by the bonding agent. Figure 8 (a)~ Figure 8 The same manufacturing process as described in (c) is used to form a portion of the first conductive member 10 , the semiconductor chip 60 , the first bonding material 51 , and the second conductive member 20 (except the lead portion 23 ).

[0103] like Fig.11 As shown, the second conductive component 20 includes a first portion 21 , a lead portion 23 , a first folded portion 25 , and a second folded portion 26 .

[0104] The first portion 21 extends in the X direction and includes an end 21e and an end 21f in the X direction. The end 21e is an end on the lead portion 23 side. That is, in the X direction, the end 21e is located between at least a portion of the lead portion 23 and the end 21f.

[0105] The lead portion 23 includes a front end portion 23e and a rear end portion 23f, and extends in the X direction. The rear end portion 23f is away from the front end portion 23e in the X direction. The rear end portion 23f is located between the front end portion 23e and the first portion 21 in the X direction.

[0106] The first folding portion 25 includes an end portion 25a and an end portion 25b. The end portion 25b is away from the end portion 25a. The end portion 25a is continuous with the rear end portion 23f of the lead portion 23. The first folding portion 25 folds back from the X direction to the folding direction Df. That is, the first folding portion 25 extends from the end portion 25a to the X direction, folds back to the folding direction Df, and extends to the end portion 25b. For example, at least a portion of the first folding portion 25 is arranged (overlapped) with a portion of the first portion 21, a portion of the semiconductor chip 60, and a portion of the first bonding material 51 in the Z direction. The first folding portion 25 is located between the center of the first bonding material 51 in the X direction and the lead portion 23 in the X direction.

[0107] The second folded portion 26 includes an end 26a and an end 26b. The end 26b is away from the end 26a. The end 26a is continuous with the end 25b. The second folded portion 26 is folded back from the folding direction Df to the X direction. That is, the second folded portion 26 extends from the end 26a to the folding direction Df, folds back to the X direction, and extends to the end 26b. The end 21e of the first part 21 is continuous with the end 26b. For example, at least a portion of the second folded portion 26 is arranged (overlapped) with a portion of the lead portion 23, a portion of the semiconductor chip 60, and a portion of the first bonding material 51 in the Z direction. At least a portion of the second folded portion 26 is located on the front end portion 23e side of the lead portion 23 than the first folded portion 25.

[0108] like Fig.11 As shown, the angle θ between the X direction and the folding direction Df is, for example, larger than 90° and equal to or smaller than 180°.

[0109] In this example, the cross-sectional shape of the second conductive component 20 is Z-shaped. Fig.11 As shown, the first folded portion 25 has a first surface f1 and a second surface f2. The first surface f1 is along the X direction. The second surface f2 extends from the end f1e of the first surface f1 in the X direction to the folding direction Df. At the end f1e, the angle between the first surface f1 and the second surface f2 is an acute angle. Similarly, the second folded portion 26 is also folded back at an acute angle.

[0110] According to the present embodiment, the occurrence of delamination in the first bonding material 51 can be suppressed, thereby suppressing the occurrence of a defect of the semiconductor device 100 such as an increase in on-resistance. The risk of occurrence of a defect such as an increase in on-resistance can be reduced.

[0111] As described above, the second conductive component 20 includes the first folded portion 25 and the second folded portion 26. When the first conductive component 10 is pressed down by the mold in a state where the position of the lead portion 23 is fixed, the load is absorbed by the first folded portion 25 and the second folded portion 26. As a result, the load applied to the end 51e of the first bonding material 51 can be reduced. The occurrence of peeling in the first bonding material 51 can be suppressed. The risk of occurrence of adverse conditions such as increased on-resistance can be reduced.

[0112] Fig.12 (a)~ Fig.12 (c) is a schematic cross-sectional view illustrating a manufacturing process of the second conductive component according to the embodiment.

[0113] For example, the second conductive member 20 is a single metal plate P1 bent at the first folded portion 25 and the second folded portion 26. That is, the lead portion 23, the first folded portion 25, the second folded portion 26 and the first portion 21 are a continuous, integrated conductive member made of the same material.

[0114] For example Fig.12 Prepare a metal plate P1 as in (a). Fig.12 As shown in (b), the upper surface and the lower surface of the metal plate P1 are provided with grooves g1 and g2 extending in the Y direction, respectively. The grooves g1 and g2 have a bottom gb and two side surfaces gc1 and gc2 intersecting the bottom gb, respectively. The angle φ between the side surfaces gc1 and gc2 is larger than 90°.

[0115] like Fig.12 As shown in (c), the first folded portion 25 is formed by folding the metal plate P1 at the groove g2. The second folded portion 26 is formed by folding the metal plate P1 at the groove g1.

[0116] Fig.13 This is a schematic cross-sectional view illustrating a portion of another semiconductor device according to the second embodiment.

[0117] Fig.13 The semiconductor device 104 shown is different from the semiconductor device 103 in the shape of the second conductive component 20 .

[0118] In this example, the cross-sectional shape of the second conductive member 20 is an S-shaped shape. For example, the first folded portion 25 has a curved shape convex in the X direction. The second folded portion 26 has a curved shape convex in the direction opposite to the X direction.

[0119] In this example, the folding direction Df is opposite to the X direction. That is, the angle between the X direction and the folding direction Df is 180°.

[0120] In the semiconductor device 104, the load received from the mold is also absorbed by the first folded portion 25 and the second folded portion 26. Thus, the load applied to the end 51e of the first bonding material 51 can be reduced. It is possible to suppress the occurrence of peeling in the first bonding material 51. It is possible to reduce the risk of occurrence of adverse conditions such as increased on-resistance.

[0121] The embodiment may include the following configurations.

[0122] (Composition 1)

[0123] A semiconductor device comprising:

[0124] a first conductive member;

[0125] A second conductive component including a first portion and a second portion, the first portion being separated from the first conductive component in a first direction, the second portion extending from an end of the first portion in a second direction intersecting the first direction and including a lead portion;

[0126] a semiconductor chip, disposed between the first portion and the first conductive component in the first direction and electrically connected to the first conductive component;

[0127] a conductive connection plate, disposed between the semiconductor chip and the first portion in the first direction;

[0128] A first conductive bonding material is located between the semiconductor chip and the connection board to electrically connect the semiconductor chip and the connection board;

[0129] a second conductive bonding material, located between the first portion and the connection plate, to electrically connect the first portion and the connection plate; and

[0130] The resin portion covers the semiconductor chip, the connection plate, and the first portion, and a portion of the lead portion and a portion of the first conductive member are exposed from the resin portion.

[0131] (Composition 2)

[0132] According to the semiconductor device of configuration 1, the connection plate includes an end portion in the second direction located on the lead portion side.

[0133] The second bonding material is not in contact with the end portion of the connection plate.

[0134] (Composition 3)

[0135] According to the semiconductor device according to Configuration 2, the first bonding material is in contact with the end portion of the connection plate.

[0136] (Composition 4)

[0137] According to the semiconductor device according to any one of Configurations 1 to 3, the second bonding material has a lower strength than the first bonding material.

[0138] (Composition 5)

[0139] According to the semiconductor device of any one of Configurations 1 to 4, a composition of the second bonding material is different from a composition of the first bonding material.

[0140] (Composition 6)

[0141] According to the semiconductor device according to configuration 5, the second bonding material contains lead.

[0142] The first bonding material does not contain lead, or a concentration of lead in the first bonding material is lower than a concentration of lead in the second bonding material.

[0143] (Composition 7)

[0144] A semiconductor device comprising:

[0145] a first conductive member;

[0146] The second conductive component comprises: a first portion separated from the first conductive component in a first direction and extending in a second direction intersecting the first direction; a lead portion comprising a front end portion and a rear end portion away from the front end portion in the second direction and extending in the second direction; a first folded portion, at least a portion of which is arranged with the first portion in the first direction and is continuous with the rear end portion of the lead portion, the first folded portion folds back from the second direction to the folded direction; and a second folded portion, which is continuous with the first folded portion, folds back from the folded direction to the second direction, and extends to the end of the first portion in the second direction;

[0147] a semiconductor chip disposed between the first portion and the first conductive component in the first direction and electrically connected to the first conductive component; and

[0148] A conductive bonding material is provided between the semiconductor chip and the first portion, is in contact with the semiconductor chip and the first portion, and electrically connects the semiconductor chip and the first portion.

[0149] (Composition 8)

[0150] According to the semiconductor device of configuration 7, the first folded portion has a curved shape that is convex in the second direction.

[0151] (Composition 9)

[0152] According to the semiconductor device of configuration 7, the first folded portion includes a first surface along the second direction and a second surface extending from an end of the first surface in the second direction in the folded direction.

[0153] An angle formed by the first surface and the second surface is an acute angle.

[0154] (Composition 10)

[0155] According to the semiconductor device of any one of Configurations 7 to 9, the second conductive member is a metal plate bent at the first folded portion and the second folded portion.

[0156] According to the embodiment, a semiconductor device capable of suppressing occurrence of a malfunction can be provided.

[0157] In the present specification, “electrically connected” includes not only a case of direct contact connection but also a case of connection via other conductive members or the like.

[0158] Several embodiments of the present invention are illustrated above, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other ways, and various omissions, substitutions, changes, etc. can be made without departing from the scope of the main purpose of the invention. These embodiments and their modifications are included in the scope and main purpose of the invention, and are included in the invention described in the claims and the scope of their equivalents. In addition, the aforementioned embodiments can be implemented in combination with each other.

Claims

1. A semiconductor device, characterized in that: have: a first conductive member; A second conductive component including a first portion and a second portion, the first portion being separated from the first conductive component in a first direction, the second portion extending from an end of the first portion in a second direction intersecting the first direction and including a lead portion; a semiconductor chip, disposed between the first portion and the first conductive component in the first direction and electrically connected to the first conductive component; a conductive connection plate, disposed between the semiconductor chip and the first portion in the first direction; A first conductive bonding material is located between the semiconductor chip and the connection board to electrically connect the semiconductor chip and the connection board; A second conductive bonding material is located between the first portion and the connection plate to electrically connect the first portion and the connection plate; as well as The resin portion covers the semiconductor chip, the connection plate, and the first portion, and a portion of the lead portion and a portion of the first conductive member are exposed from the resin portion.

2. The semiconductor device according to claim 1, wherein: The connecting plate includes an end portion in the second direction located on one side of the lead portion, The second bonding material is not in contact with the end portion of the connection plate.

3. The semiconductor device according to claim 2, wherein: The first bonding material is in contact with the end portion of the connection plate.

4. The semiconductor device according to any one of claims 1 to 3, characterized in that The second bonding material has a lower strength than the first bonding material.

5. The semiconductor device according to any one of claims 1 to 3, characterized in that The composition of the second bonding material is different from the composition of the first bonding material.

6. The semiconductor device according to claim 5, wherein: The second bonding material contains lead, The first bonding material does not contain lead, or a concentration of lead in the first bonding material is lower than a concentration of lead in the second bonding material.

7. A semiconductor device, characterized in that: have: a first conductive member; The second conductive component comprises: a first portion separated from the first conductive component in a first direction and extending in a second direction intersecting the first direction; a lead portion comprising a front end portion and a rear end portion away from the front end portion in the second direction and extending in the second direction; a first folded portion, at least a portion of which is arranged with the first portion in the first direction and is continuous with the rear end portion of the lead portion, the first folded portion folds back from the second direction to the folded direction; and a second folded portion, which is continuous with the first folded portion, folds back from the folded direction to the second direction, and extends to the end of the first portion in the second direction; a semiconductor chip, disposed between the first portion and the first conductive component in the first direction and electrically connected to the first conductive component; as well as A conductive bonding material is provided between the semiconductor chip and the first portion, and is in contact with the semiconductor chip and the first portion to electrically connect the semiconductor chip and the first portion.

8. The semiconductor device according to claim 7, wherein: The first folded portion has a curved shape convex toward the second direction.

9. The semiconductor device according to claim 7, wherein: The first folded portion includes a first surface along the second direction and a second surface extending from an end of the first surface in the second direction toward the folded direction. An angle formed by the first surface and the second surface is an acute angle.

10. The semiconductor device according to any one of claims 7 to 9, characterized in that The second conductive member is a metal plate bent at the first folded portion and the second folded portion.

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