A low-scattering antenna array based on artificial magnetic conductor structure

Abstract

The application relates to the technical field of antennas and electromagnetic stealth, and particularly discloses a low-scattering antenna array based on an artificial magnetic conductor structure, which comprises an upper dielectric layer, an air layer and a lower dielectric layer arranged in sequence from top to bottom; a plurality of groups of patch units A and a plurality of groups of patch units B are arranged in an array on the upper surface of the upper dielectric layer; each group of patch units A comprises a plurality of groups of slotted cut patch units arranged periodically and having cut seams; each group of patch units B comprises a plurality of groups of common patch units arranged periodically; an upper microstrip feed line strip is arranged on the upper surface of the lower dielectric layer; a metal floor is arranged on the lower surface of the lower dielectric layer, the metal floor is provided with a lower strip-shaped gap corresponding to the upper microstrip feed line strip and a coaxial cable connected with the upper microstrip feed line strip. The application realizes the radiation and scattering integrated antenna array with wideband radiation performance and wideband low-scattering performance by the mechanism of the artificial magnetic conductor orthogonal reflection screen which utilizes the interference cancellation of reflected wave phase difference.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of antennas and electromagnetic stealth, and more particularly, to a low-scattering antenna array based on an artificial magnetic conductor structure. BACKGROUND

[0002] With the continuous development of radar wireless detection technology, the demand for broadband scattering reduction performance of stealth antennas is also increasing; this requires the antenna to have a wideband radiation performance while having a wideband radar cross section (RCS) reduction capability to ensure the low detectability of the aircraft.

[0003] Currently, antenna scattering reduction techniques include traditional shape modification techniques, coating with wave-absorbing materials, and using super surface structures for scattering cancellation and diffuse reflection. Common super surface structures for scattering reduction include artificial magnetic conductors, electromagnetic bandgap structures, and polarization rotation surfaces.

[0004] However, super surface structures are only placed as additional structures around the antenna, which has a large physical area overall and may deteriorate the radiation performance of the antenna. In existing work, it is rare to have an antenna array that has good radiation performance and low scattering performance without introducing additional structures. Therefore, developing a low-scattering antenna array that has both radiation and electromagnetic stealth characteristics is particularly important to meet the increasingly stringent high-bandwidth and low-detectability requirements in engineering. SUMMARY

[0005] The technical problem to be solved by the present application is to provide a low-scattering antenna array based on an artificial magnetic conductor structure.

[0006] The solution adopted by the present application to solve the technical problem is:

[0007] A low-scattering antenna array based on an artificial magnetic conductor structure, comprising an upper dielectric layer, an air layer and a lower dielectric layer arranged in order from top to bottom.

[0008] An upper surface of the upper dielectric layer is arranged with a plurality of groups of patch units A and a plurality of groups of patch units B in an array staggered manner;

[0009] Each group of patch units A includes a plurality of groups of slotted cut seam patches arranged periodically and having cut seams; and each group of patch units B includes a plurality of groups of ordinary patches arranged periodically;

[0010] An upper microstrip feed line strip corresponding to the slotted cut seam patches and the ordinary patches is arranged on an upper surface of the lower dielectric layer;

[0011] The lower surface of the lower medium layer is provided with a metal floor, and the metal floor is provided with a lower strip-shaped gap corresponding to the upper microstrip feed line and a coaxial cable connected with the upper microstrip feed line.

[0012] In some possible embodiments, the slotted slot patch is provided with two groups of first slots located on the same straight line, and a slot unit arranged on the straight line and in a symmetrical arrangement.

[0013] The two groups of first slots are formed with a gap at one end close to each other; and the other end of the two groups of first slots extends to the opposite two end faces of the slotted slot patch.

[0014] In some possible embodiments, the slot unit comprises a second slot, a slot group arranged on the side away from the first slot of the second slot; the first slot, the second slot and the slot group are arranged at equal intervals; and the two ends of the second slot penetrate through the opposite two end faces of the slotted slot patch.

[0015] In some possible embodiments, the slot group comprises a third slot arranged on the side away from the first slot of the second slot, and a fourth slot arranged on the side away from the second slot of the third slot.

[0016] The first slot, the second slot, the third slot and the fourth slot are arranged at equal intervals and the gap is B; the length of the second slot is a, the length of the third slot is b, and the length of the fourth slot is c, a > b > c.

[0017] The midpoint of the straight line where the two groups of first slots are located, the midpoint of the second slot, the midpoint of the third slot and the midpoint of the fourth slot are on the same straight line.

[0018] In some possible embodiments, the gap A between the two groups of first slots is A = 5.9 mm ± 0.1 mm; and B = 4.6 mm ± 0.1 mm.

[0019] In some possible embodiments, the slotted slot patch in each group of the patch unit A is four groups, and the four groups of slotted slot patches are distributed in two rows and two columns; and the ordinary patch in the patch unit B is four groups, and the four groups of ordinary patches are distributed in two rows and two columns.

[0020] In some possible embodiments, the widths of the first slot, the second slot, the third slot and the fourth slot are all 1 mm, and the lengths of the first slot, the second slot, the third slot and the fourth slot are 15 mm, 36 mm, 19 mm and 17 mm, respectively.

[0021] In some possible embodiments, the slotted slot patch and the ordinary patch are both square structures, the sizes of the slotted slot patch and the ordinary patch are the same, and the side lengths of the slotted slot patch and the ordinary patch are both 38 mm.

[0022] The upper medium layer, the air layer and the lower medium layer are all square structures, and the side length of the upper medium layer, the air layer and the lower medium layer is all 240m.

[0023] In some possible embodiments, the length of the upper microstrip feed line strip is 26.5mm, and the width is 4mm; the length of the lower strip-shaped slot is 47mm, and the width is 0.5mm.

[0024] The thickness of the upper medium layer is 2mm, the thickness of the air layer is 7mm, and the thickness of the lower medium layer is 5mm.

[0025] In some possible embodiments, the upper microstrip feed line strip is connected with the coaxial cable through a metallized via; the material of the upper medium layer and the lower medium layer is RT / duroid 5880.

[0026] Compared with the prior art, the present application has the following beneficial effects:

[0027] The present application uses two slotted slot patches with the same shape and size and different structural forms as radiation units, and the radiation characteristics are close but the electromagnetic wave reflection phases are different.

[0028] The present application realizes the radiation and scattering integrated antenna array surface with wideband radiation performance and wideband low scattering performance through the mechanism of interference cancellation of the artificial magnetic conductor orthogonal reflection screen by using the reflection wave phase difference.

[0029] The present application has the advantages of low profile, simple structure and strong robustness, and realizes the antenna array surface with low scattering characteristics without introducing additional scattering reduction structure, the impedance bandwidth is 2-2.5GHz, the radar scattering cross section reduction 8dB bandwidth is 2-4GHz, and when the installation space is limited, it can provide a better solution for the stealth antenna. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 It is a schematic diagram of the overall structure of the present application.

[0031] Figure 2 It is a schematic diagram of the structure of the lower medium layer in the present application.

[0032] Figure 3 It is a schematic diagram of the upper surface of the lower medium layer in the present application.

[0033] Figure 4 It is a schematic diagram of the lower surface of the lower medium layer in the present application.

[0034] Figure 5 It is a schematic diagram of the structure of the slotted slot patch in the present application.

[0035] Figure 6 S(1,1) curve chart of the present application;

[0036] Figure 7 RCS reduction curve chart of the present application;

[0037] wherein:

[0038] 1, upper dielectric layer;

[0039] 11, slotted slot patch;

[0040] 111, first slot;

[0041] 112, second slot;

[0042] 113, third slot;

[0043] 114, fourth slot;

[0044] 12, general patch;

[0045] 2, air layer;

[0046] 3, lower dielectric layer;

[0047] 31, upper microstrip feed line strip;

[0048] 32, metal floor;

[0049] 33, lower strip slot;

[0050] 4, coaxial cable. DETAILED DESCRIPTION

[0051] In the present application, unless otherwise clearly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements. The "first", "second" and similar words mentioned in the present application do not represent any order, quantity or importance, but only distinguish different components. Similarly, "one" or "a" and the like do not represent a quantity limit, but represent the existence of at least one. In the implementation of the present application, the association relationship between the associated objects is described as "and / or", which means that there can be three relationships, for example, A and / or B, which means that there are three cases of A alone, A and B together, and B alone. In the description of the embodiments of the present application, unless otherwise specified, the meaning of "multiple" is two or more. For example, multiple positioning columns refer to two or more positioning columns. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0052] The application will be described in detail below.

[0053] As Figures 1-5 shown:

[0054] A low-scattering antenna array based on an artificial magnetic conductor structure, comprising an upper dielectric layer 1, an air layer 2 and a lower dielectric layer 3 arranged in sequence from top to bottom;

[0055] A plurality of groups of patch units A and a plurality of groups of patch units B are arranged in an array on the upper surface of the upper dielectric layer 1; that is, the distribution of the plurality of groups of patch units A and the plurality of groups of patch units B is similar to the distribution of black and white squares on a chessboard; the patch units A and the patch units B are distributed in an alternating and spaced manner;

[0056] Each group of the patch units A comprises a plurality of groups of slotted slot patches 11 arranged periodically and having a slot; each group of the patch units B comprises a plurality of groups of ordinary patches 12 arranged periodically;

[0057] The slotted slot patch 11 and the ordinary patch 12 are the same in shape and size, which can be circular or square; the slotted slot patch 11 and the ordinary patch 12 are the same in material as the antenna array in the prior art, which will not be described in detail here;

[0058] An upper microstrip feed line 31 corresponding to the slotted slot patch 11 and the ordinary patch 12 is arranged on the upper surface of the lower dielectric layer 3;

[0059] A metal floor 32 is arranged on the lower surface of the lower dielectric layer 3, and a lower strip-shaped gap 33 corresponding to the upper microstrip feed line 31 and a coaxial cable 4 connected to the upper microstrip feed line 31 are arranged on the metal floor 32; specifically, the upper microstrip feed line 31 is connected to the coaxial cable 4 arranged on the metal floor 32 through a metalized via hole; the standard load of the coaxial cable 4 is preferably 50 ohms.

[0060] The air layer 2 is used for impedance matching of antenna coupling feeding, and the materials of the upper dielectric layer 1 and the lower dielectric layer 3 are preferably RT / duro i d5880 high-frequency boards;

[0061] The slotted slot patch 11 and the ordinary patch 12 simultaneously serve as two kinds of artificial magnetic conductor units; the mechanism of the artificial magnetic conductor unit orthogonal reflection screen using reflection wave phase difference for interference cancellation realizes a radiation, scattering integrated antenna array with wideband radiation performance and wideband low scattering performance;

[0062] The slotting and slitting operation is performed on the slotted and slit patch 11, so that the upper surface of the slotted and slit patch 11 has a slit, and the structure is changed while the radiation performance of the square microstrip antenna is not changed, so that the phase difference of the reflected beam is close to 180° of the original structure, the artificial magnetic conductor characteristic is formed, and scattering cancellation is used.

[0063] The upper microstrip feed line 31 is used for impedance matching and coupling feeding, and excites the slotted and slit patch 11 and the common patch 12 on the upper surface of the dielectric layer 1, so that the radiation performance of the antenna can be independently controlled.

[0064] In some possible embodiments, the slotted and slit patch 11 is provided with two groups of first slits 111 located on the same straight line, and a slit unit arranged symmetrically on the straight line where the two groups of first slits 111 are located.

[0065] The two groups of first slits 111 are formed with a gap at one end close to each other, and the other end of the two groups of first slits 111 extends to the opposite two end surfaces of the slotted and slit patch 11.

[0066] In some possible embodiments, the slit unit includes a second slit 112 and a slit group arranged on the side of the second slit 112 away from the first slit 111; the first slit 111, the second slit 112, and the slit group are arranged at equal intervals; and the two ends of the second slit 112 penetrate through the opposite two end surfaces of the slotted and slit patch 11.

[0067] In some possible embodiments, the slit group includes a third slit 113 arranged on the side of the second slit 112 away from the first slit 111, and a fourth slit 114 arranged on the side of the third slit 113 away from the second slit 112.

[0068] The first slit 111, the second slit 112, the third slit 113, and the fourth slit 114 are arranged at equal intervals and have a gap B; the length of the second slit 112 is a, the length of the third slit 113 is b, and the length of the fourth slit 114 is c, and a > b > c.

[0069] The midpoint of the straight line where the two groups of first slits 111 are located, the midpoint of the second slit 112, the midpoint of the third slit 113, and the midpoint of the fourth slit 114 are on the same straight line.

[0070] In some possible embodiments, the gap A between the two groups of first slits 111 is A = 5.9 mm ± 0.1 mm, and B = 4.6 mm ± 0.1 mm.

[0071] In some possible implementation manners, the slotted cutout patch 11 in each of the patch units A is four groups, and the four groups of slotted cutout patches 11 are arranged in two rows and two columns; the common patch 12 in the patch unit B is four groups, and the four groups of common patches 12 are arranged in two rows and two columns.

[0072] In some possible implementation manners, the widths of the first slit 111, the second slit 112, the third slit 113 and the fourth slit 114 are all 1 mm, and the lengths of the first slit 111, the second slit 112, the third slit 113 and the fourth slit 114 are 15 mm, 36 mm, 19 mm and 17 mm respectively.

[0073] In some possible implementation manners, the slotted cutout patch 11 and the common patch 12 are both square structures, and the sizes of the slotted cutout patch 11 and the common patch 12 are the same, and the side lengths of the slotted cutout patch 11 and the common patch 12 are both 38 mm.

[0074] The upper dielectric layer 1, the air layer 2 and the lower dielectric layer 3 are all square structures, and the side lengths of the upper dielectric layer 1, the air layer 2 and the lower dielectric layer 3 are all 240 mm.

[0075] In some possible implementation manners, the length of the upper microstrip feed line 31 is 26.5 mm, and the width is 4 mm; the length of the lower strip-shaped slit 33 is 47 mm, and the width is 0.5 mm.

[0076] In some possible implementation manners, the total thickness of the antenna array surface is 14 mm, the thickness of the upper dielectric layer 1 is 2 mm, the thickness of the air layer 2 is 7 mm, and the thickness of the lower dielectric layer 3 is 5 mm.

[0077] Embodiment 1:

[0078] The embodiment provides a low-scattering antenna array based on an artificial magnetic conductor structure, which is based on the structure; specifically, the gap A between the two groups of first slots 111 is 5.9 m; the first slot 111, the second slot 112, the third slot 113 and the third slot 113 are arranged at equal intervals and the gap is B; B is 4.6 mm; the total thickness of the antenna array is 14 mm, the thickness of the upper dielectric layer 1 is 2 mm, the thickness of the air layer 2 is 7 mm, and the thickness of the lower dielectric layer 3 is 5 mm; the length of the upper microstrip feed line 31 is 26.5 mm, and the width is 4 mm; the length of the lower strip slot 33 is 47 mm, and the width is 0.5 mm; the upper dielectric layer 1, the air layer 2 and the lower dielectric layer 3 are all square structures, and the side length of the upper dielectric layer 1, the air layer 2 and the lower dielectric layer 3 is all 240 m; the slotted slot patch 11 in each group of the patch unit A is four groups, and the four groups of slotted slot patches 11 are distributed in two rows and two columns; the ordinary patch 12 in the patch unit B is four groups, and the four groups of ordinary patches 12 are distributed in two rows and two columns; the slotted slot patch 11 and the ordinary patch 12 are both square structures, the size of the slotted slot patch 11 and the ordinary patch 12 is the same, and the side length is 38 mm; the width of the first slot 111, the second slot 112, the third slot 113 and the fourth slot 114 is all 1 mm, and the length of the first slot 111, the second slot 112, the third slot 113 and the fourth slot 114 is 15 mm, 36 mm, 19 mm and 17 mm respectively. The material of the upper dielectric layer 1 and the lower dielectric layer 3 is preferably RT / duroid 5880 high-frequency board; and the standard load of the coaxial cable 4 is 50 ohms.

[0079] The application starts from a traditional rectangular microstrip antenna, and improves the traditional rectangular microstrip antenna to widen the impedance bandwidth of the microstrip antenna; the mechanism of artificial magnetic conductor orthogonal reflection screen interference cancellation is applied to the microstrip antenna, so that the design of the low-scattering antenna array with radiation characteristics and electromagnetic stealth characteristics is realized.

[0080] The application uses two patches with the same size and different structures as radiation units, the radiation characteristics of the two patches are close to each other and the electromagnetic wave reflection phases of the two patches are different; the mechanism of artificial magnetic conductor orthogonal reflection screen interference cancellation is used to realize the radiation and scattering integrated antenna array with wideband radiation performance and wideband low-scattering performance.

[0081] The application increases and prolongs the path of the antenna surface induced current by introducing the slotted slot patch 11, and improves the impedance bandwidth of the antenna.

[0082] The application makes the patch antenna unit have a reflection phase difference of about 180 degrees in a wide frequency range for incident electromagnetic waves by introducing the slotted cut patch 11, and the scattering wave beams can be counteracted by the arrangement and combination of the slotted cut patch 11 and the ordinary patch 12, so that the single-station RCS reduction is realized without introducing additional stealth structures.

[0083] The slot structure (the first slot 111, the second slot 112, the third slot 113 and the fourth slot 114) in the slotted cut patch 11 is symmetrical in the upper half plane and the lower half plane, and the left half plane and the right half plane are also symmetrical with each other, so that the polarization insensitivity characteristic is achieved, and the RCS reduction and the antenna electromagnetic stealth under different polarized electromagnetic wave incidence can be realized.

[0084] The application has the advantages of low profile, simple structure and strong robustness, and realizes the antenna array surface design with low scattering characteristics without introducing additional scattering reduction structures.

[0085] As shown in Figure 6 and Figure 7 , by simulating the embodiment 1, it is obtained that the impedance bandwidth is 2-2.5GHz, and the radar scattering cross section reduction 8dB bandwidth is 2-4GHz, so it can be seen that the application will be a good stealth antenna solution for limited installation space.

[0086] The application is not limited to the foregoing specific embodiments. The application extends to any novel feature or any new combination described in this specification, and any new method or process steps or any new combination disclosed.

Claims

1. A low-scattering artificial magnetic conductor structure based antenna array, characterized in that, The upper medium layer, the air layer and the lower medium layer are sequentially arranged from top to bottom. A plurality of groups of patch units A and a plurality of groups of patch units B are arranged in an array on the upper surface of the upper medium layer. Each group of the patch units A comprises a plurality of groups of slotted slot patches arranged periodically and having a slot; An upper microstrip feed line corresponding to the slotted slot patch and the ordinary patch is arranged on the upper surface of the lower medium layer. A metal floor is arranged on the lower surface of the lower medium layer, and the metal floor is provided with a lower strip-shaped gap corresponding to the upper microstrip feed line and a coaxial cable connected with the upper microstrip feed line.

2. The low-scattering antenna array based on artificial magnetic conductor structure according to claim 1, characterized in that, The slotted slot patch is provided with two groups of first gaps located on the same straight line and a gap unit arranged on the straight line where the two groups of first gaps are located and symmetrically arranged. The two groups of first gaps are formed with a gap at one end close to each other, and the other end of the two groups of first gaps extends to the opposite two end faces of the slotted slot patch.

3. The low-scattering antenna array based on artificial magnetic conductor structure according to claim 2, characterized in that, The gap unit comprises a second gap, a gap group arranged on the side of the second gap away from the first gap; the first gap, the second gap and the gap group are arranged at equal intervals; and the two ends of the second gap penetrate through the opposite two end faces of the slotted slot patch.

4. The low-scattering antenna array plane based on artificial magnetic conductor structure according to claim 3, characterized in that, The gap group comprises a third gap arranged on the side of the second gap away from the first gap and a fourth gap arranged on the side of the third gap away from the second gap. The first gap, the second gap, the third gap and the fourth gap are arranged at equal intervals and have a gap B; the length of the second gap is a, the length of the third gap is b, and the length of the fourth gap is c, a > b > c; The midpoint of the straight line where the two groups of first gaps are located, the midpoint of the second gap, the midpoint of the third gap and the midpoint of the fourth gap are on the same straight line.

5. The low-scattering antenna array plane based on artificial magnetic conductor structure according to claim 4, characterized in that, The gap A between the two groups of first gaps is 5.9m±0.1mm, and B=4.6mm±0.1mm.

6. The low-scattering antenna array plane based on artificial magnetic conductor structure according to claim 4, characterized in that, The slotted slot patch in each group of the patch units A is four groups, and the four groups of slotted slot patches are distributed in two rows and two columns; the ordinary patch in the patch unit B is four groups, and the four groups of ordinary patches are distributed in two rows and two columns.

7. The low-scattering antenna array based on artificial magnetic conductor structure according to claim 4, characterized in that, The width of the first gap, the second gap, the third gap and the fourth gap is 1mm, and the length of the first gap, the second gap, the third gap and the fourth gap is 15mm, 36mm, 19mm and 17mm respectively.

8. A low-scattering antenna array based on a HMC structure according to any one of claims 1-7, characterized in that, The slotted slot patch and the ordinary patch are both square structures, and the size of the slotted slot patch and the ordinary patch is the same, and the side length is 38mm. The upper medium layer, the air layer and the lower medium layer are all square structures, and the side length of the upper medium layer, the air layer and the lower medium layer is 240m.

9. A low-scattering antenna array based on a HMC structure according to any one of claims 1-7, characterized in that, The length of the upper microstrip feed line is 26.5mm, and the width is 4mm; the length of the lower strip-shaped gap is 47mm, and the width is 0.5mm. The thickness of the upper medium layer is 2mm, the thickness of the air layer is 7mm, and the thickness of the lower medium layer is 5mm.

10. A low-scattering antenna array based on a structure of artificial magnetic conductor according to any one of claims 1-7, characterized in that, The upper microstrip feed line is connected with the coaxial cable through a metallized via hole; and the material of the upper medium layer and the lower medium layer is RT / duroid5880.

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