IGBT layout structure based on three-level inverter

Abstract

The invention relates to the technical field of inverters, in particular to an IGBT layout structure based on a three-level inverter, and mainly solves the technical problems that an existing IGBT layout structure based on the three-level inverter is large in occupied space and poor in heat dissipation effect. The IGBT layout structure based on the three-level inverter comprises a radiator, an air inlet of the radiator is formed in the right side wall of the radiator, an air outlet of the radiator is formed in the bottom wall of the radiator, a U-phase assembly, a V-phase assembly and a W-phase assembly and a chopping assembly are attached to the top face of the radiator, and the U-phase assembly, the V-phase assembly and the W-phase assembly are sequentially distributed at intervals from front to back. Each group of phase assemblies comprises a clamping diode and an inversion power device which are distributed at an interval in the left-right direction, the clamping diode is located on the left side of the inversion power device, and each inversion power device comprises an upper bridge arm IGBT and a lower bridge arm IGBT which are distributed at an interval in the front-back direction; and the two chopping IGBTs are respectively distributed at the left side of the U-phase assembly and the left side of the V-phase assembly at intervals.

Description

Technical Field

[0001] The present invention relates to the technical field of inverters, and in particular to an IGBT layout structure based on a three-level inverter. Background Art

[0002] The country's new energy technology faces problems such as power generation being greatly affected by external factors and power cannot be output stably. The use of high-power converters is the key to solving this problem, and three-level inverters can meet the high-voltage and high-power requirements of high-power converters.

[0003] The three-level inverter is generally provided with a heat sink, and then multiple IGBTs such as inverter IGBT and chopper IGBT are distributed on the outer surface of the heat sink to meet the heat dissipation requirements.

[0004] The existing IGBT layout structure based on three-level inverter has the following defects: first, the IGBT is arranged in a rectangular or triangular shape, which occupies a large space; second, the chopper IGBT is close to the inverter IGBT, and the inverter IGBT corresponds to the middle of the heat sink, so the heat dissipation effect is poor. Therefore, a new IGBT layout structure is urgently needed to overcome the above two defects. Summary of the invention

[0005] In order to overcome the technical defects of the existing IGBT layout structure based on the three-level inverter, such as large occupied space and poor heat dissipation effect, the present invention provides an IGBT layout structure based on the three-level inverter.

[0006] The IGBT layout structure based on the three-level inverter provided by the present invention comprises a radiator, wherein the air inlet of the radiator is arranged on the right side wall thereof and the air outlet is arranged on the bottom wall thereof, and the top surface of the radiator is provided with three groups of phase components, namely, a U-phase component, a V-phase component and a W-phase component, and a chopper component, wherein the U-phase component, the V-phase component and the W-phase component are sequentially spaced from front to back, and each group of phase components comprises a clamping diode and an inverter power device spaced from left to right, and the clamping diode is located on the left side of the inverter power device, and each inverter power device comprises an upper bridge arm IGBT and a lower bridge arm IGBT spaced from front to back, and the chopper component comprises two chopper IGBTs, and the two chopper IGBTs are spaced on the left side of the U-phase component and the left side of the V-phase component, respectively.

[0007] Optionally, the upper bridge arm IGBT of the U-phase component is located in front of its lower bridge arm IGBT, and the upper bridge arm IGBTs of the V-phase component and the W-phase component are located in rear of their lower bridge arm IGBTs.

[0008] Optionally, an anti-parallel diode in an IGBT is used as the clamping diode.

[0009] Optionally, the configuration plate of the upper bridge arm IGBT and the configuration plate of the lower bridge arm IGBT are both facing the right side, the configuration plate of the clamping diode of the U-phase component and the configuration plate of the chopper IGBT of the corresponding U-phase component are both facing the front side, and the configuration plate of the clamping diode of the V-phase component and the configuration plate of the chopper IGBT of the corresponding V-phase component and the configuration plate of the clamping diode of the W-phase component are all facing the rear side.

[0010] Optionally, the length direction of the upper bridge arm IGBT and the length direction of the lower bridge arm IGBT are both arranged left to right, and the length direction of the chopper IGBT and the length direction of the clamping diode are both arranged front to back.

[0011] Optionally, the upper bridge arm IGBT, the lower bridge arm IGBT, the clamping diode and the chopper IGBT are all double-tube packages.

[0012] Optionally, a thyristor is also attached to the top surface of the heat sink, and the thyristors are distributed at intervals on the left side of the W-phase component.

[0013] Optionally, a current sensor is also attached to the top surface of the radiator, and two current sensors are provided and are spaced apart and distributed on the right side of the U-phase component and the right side of the V-phase component.

[0014] Optionally, a supporting capacitor is provided on the left side of the radiator.

[0015] The technical solution provided by the present invention has the following advantages compared with the prior art: The IGBT layout structure based on the three-level inverter provided by the present invention has a compact overall layout structure and occupies a small space; the inverter power device with relatively high heat loss is closer to the air inlet, and the heat dissipation effect is better. At the same time, the chopper IGBT and the inverter power device are separated by a clamping diode, which can avoid the chopper IGBT from being overheated, and the overall heat dissipation effect is better. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0017] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0018] Figure 1 A schematic plan view showing the layout structure of an IGBT in an embodiment of the present invention; Figure 2A dimension diagram showing the IGBT layout structure in an embodiment of the present invention; Figure 3 A circuit topology diagram showing a three-level inverter according to an embodiment of the present invention; Figure 4 A heat dissipation simulation diagram is shown in an embodiment of the present invention; Figure 5 A top view showing the arrangement of a composite busbar in an embodiment of the present invention; Figure 6 A front view showing the arrangement of the composite busbar in an embodiment of the present invention.

[0019] In the figure: 1. Upper bridge arm IGBT; 2. Lower bridge arm IGBT; 3. Clamping diode; 4. Chopper IGBT; 5. Configuration board; 6. Thyristor; 7. Current sensor; 8. Support capacitor; 9. Composite busbar; 100. Radiator. DETAILED DESCRIPTION

[0020] In order to more clearly understand the above-mentioned objectives, features and advantages of the present invention, the scheme of the present invention will be further described below. It should be noted that the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

[0021] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein; it is obvious that the embodiments in the specification are only part of the embodiments of the present invention, rather than all of the embodiments.

[0022] Combine the following Figures 1 to 6 The specific embodiments of the present invention are described in detail.

[0023] The present embodiment provides an IGBT layout structure based on a three-level inverter, including a heat sink 100, wherein the air inlet of the heat sink 100 is arranged on the right side wall thereof and the air outlet is arranged on the bottom wall thereof, and the top surface of the heat sink 100 is provided with three groups of phase components, namely, a U-phase component, a V-phase component and a W-phase component, and a chopper component, wherein the U-phase component, the V-phase component and the W-phase component are sequentially spaced from front to back, and each group of phase components includes a clamping diode 3 and an inverter power device spaced from left to right, and the clamping diode 3 is located on the left side of the inverter power device, and each inverter power device includes an upper bridge arm IGBT1 and a lower bridge arm IGBT2 spaced from front to back, and the chopper component includes two chopper IGBT4, and the two chopper IGBT4 are spaced on the left side of the U-phase component and the left side of the V-phase component, respectively.

[0024] Specifically, the top surface size of the heat sink 100 of this embodiment is 475 mm long and 355 mm wide. The spacing between the U-phase component and the V-phase component is 23 mm, the spacing between the V-phase component and the W-phase component is 26.6 mm, the spacing between the clamping diode 3 of the U-phase component and the V-phase component and the inverter power device is 16 mm, the spacing between the clamping diode 3 of the W-phase component and the inverter power device is 16.1 mm, the spacing between the upper bridge arm IGBT1 and the lower bridge arm IGBT2 of each phase component is 13 mm, and the spacing between the chopper IGBT4 and the corresponding phase component is 16 mm.

[0025] Specifically, the upper bridge arm IGBT1 of the U-phase assembly of this embodiment is located in front of its lower bridge arm IGBT2, and the upper bridge arm IGBT1 of the V-phase assembly and the W-phase assembly are located behind their lower bridge arm IGBT2. Figure 3 It can be seen that the upper and lower bridge arms of the V phase and the W phase are interchanged, which is beneficial to the fourth layer wiring of the composite busbar 9. It should be noted that the composite busbar 9 of this embodiment has four layers, which are respectively a positive busbar, a negative busbar, a zero potential busbar and a fourth layer busbar.

[0026] Specifically, this embodiment uses an anti-parallel diode in the IGBT as the clamping diode 3 .

[0027] It is easy to understand that each IGBT is provided with a configuration plate 5 at one end in the length direction.

[0028] More specifically, the configuration board 5 of the upper bridge arm IGBT1 and the configuration board 5 of the lower bridge arm IGBT2 of this embodiment are both facing the right side, the configuration board 5 of the clamping diode 3 of the U phase component and the configuration board 5 of the chopper IGBT4 of the corresponding U phase component are both facing the front side, and the configuration board 5 of the clamping diode 3 of the V phase component and the configuration board 5 of the chopper IGBT4 of the corresponding V phase component and the configuration board 5 of the clamping diode 3 of the W phase component are all facing the rear side. The configuration boards 5 are all facing the surroundings of the heat sink 100, which can reduce the opening avoidance of the composite busbar 9, is more conducive to the processing of the composite busbar 9, optimizes the processing technology of the composite busbar 9, and reduces the stray inductance of the composite busbar 9.

[0029] More specifically, the length direction of the upper bridge arm IGBT1 and the length direction of the lower bridge arm IGBT2 of this embodiment are both arranged left and right, and the length direction of the chopper IGBT4 and the length direction of the clamping diode 3 are both arranged front and back. Such a distribution is conducive to improving space utilization, so that the IGBT occupies a smaller space.

[0030] More specifically, the upper bridge arm IGBT1, the lower bridge arm IGBT2, the clamping diode 3 and the chopper IGBT4 of this embodiment are all double-tube packages.

[0031] Furthermore, a thyristor 6 is attached to the top surface of the heat sink 100, and the thyristor 6 is spaced and distributed on the left side of the W-phase component. Since the two chopper IGBTs 4 are respectively distributed on the left side of the U-phase component and the V-phase component, a vacancy is formed on the left side of the W-phase component, and the vacancy is used to install the thyristor 6, and the spatial distribution is more reasonable.

[0032] Furthermore, a current sensor 7 is attached to the top surface of the heat sink 100. Two current sensors 7 are provided and are spaced apart on the right side of the U-phase component and the right side of the V-phase component. Since a thyristor 6 is provided on the left side of the W-phase, and the width of the thyristor 6 is greater than the width of the chopper IGBT 4, two current sensors 7 are respectively provided on the right side of the U-phase component and the V-phase component, which is more conducive to improving space utilization.

[0033] Furthermore, a supporting capacitor 8 is provided on the left side of the heat sink 100 .

[0034] It should be noted that the supporting capacitor 8 is not disposed on the top surface of the radiator 100 , but is located on the left side of the radiator 100 .

[0035] It should be noted that Figure 3 Among them, V1 is a chopper circuit, and V2 to V4 are U-phase circuit, V-phase circuit and W-phase circuit respectively.

[0036] In the IGBT layout structure based on the three-level inverter of this embodiment, the IGBT occupies less space, has better heat dissipation effect, and is conducive to the wiring of the composite busbar 9. At the same time, the composite busbar 9 has a simpler structure and is more conducive to the processing of the composite busbar 9.

[0037] The power consumption and heat dissipation of this embodiment are simulated below to verify the heat dissipation performance of this IGBT layout structure.

[0038] I. Device selection parameters: project parameter Output capacity S (kVA) 300 Rated input voltage Udc (V, DC) 1500 Input voltage range (V, DC) DC1400V~1800V Rated input current Idc (A, DC) 157 Rated output voltage Uo (V, AC) 990 Maximum output voltage Uo (V, AC) 1273 Rated output current Io (A, AC) 175 Output frequency (satisfying 50,000 rpm, 1 pole pair) 833Hz Through calculation, it is known that the upper bridge arm IGBT1, the lower bridge arm IGBT2, the chopper IGBT4 and the clamping diode 3 all use double-tube package 1200V / 600A tubes. However, whether the 11 IGBTs can work reliably on a heat sink 100 requires detailed calculation and simulation of the power consumption and heat dissipation of the devices.

[0039] II. IGBT loss calculation: The power loss of a single IGBT when working as a switch is 1.13KW, the power loss of a single IGBT when working as a diode is 0.35KW, and the power loss when working as a chopper is 0.93KW.

[0040] P 总 =P 逆 +P斩 +P 极 =1.13×6+0.93×2+0.35×3=9.69KW; III. Heat dissipation simulation: When the design requires that the ambient temperature is 40°C, the maximum temperature of the heat sink 100 substrate is designed to be less than 110°C, which can meet the requirement.

[0041] The simulation structure is as follows Figure 4 As shown in the figure, the temperature of the highest point on the surface of the heat sink 100 is 105° C., which is lower than the theoretically calculated heat sink surface temperature of 110° C. This air-cooled heat dissipation design fully meets the design requirements, and this IGBT layout structure is completely feasible.

[0042] The above is only a specific implementation of the present invention, which enables those skilled in the art to understand or implement the present invention. Although detailed descriptions are given with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments, and they should all be covered by the protection scope of the claims.

Claims

1. An IGBT layout structure based on a three-level inverter, characterized in that: The invention comprises a heat sink (100), wherein the air inlet of the heat sink (100) is arranged on the right side wall thereof and the air outlet is arranged on the bottom wall thereof; the top surface of the heat sink (100) is provided with three groups of phase components, namely, a U-phase component, a V-phase component and a W-phase component, and a chopper component; the U-phase component, the V-phase component and the W-phase component are sequentially spaced from front to back; each group of phase components comprises a clamping diode (3) and an inverter power device spaced from left to right, and the clamping diode (3) is located on the left side of the inverter power device; each inverter power device comprises an upper bridge arm IGBT (1) and a lower bridge arm IGBT (2) spaced from front to back; the chopper component comprises two chopper IGBTs (4); the two chopper IGBTs (4) are spaced from left to right of the U-phase component and from left to right of the V-phase component, respectively.

2. The IGBT layout structure based on the three-level inverter according to claim 1, characterized in that: The upper bridge arm IGBT (1) of the U-phase component is located on the front side of its lower bridge arm IGBT (2), and the upper bridge arm IGBT (1) of the V-phase component and the W-phase component are located on the rear side of their lower bridge arm IGBT (2).

3. The IGBT layout structure based on the three-level inverter according to claim 1, characterized in that: An anti-parallel diode in an IGBT is used as the clamping diode (3).

4. The IGBT layout structure based on the three-level inverter according to claim 3, characterized in that: The configuration plate (5) of the upper bridge arm IGBT (1) and the configuration plate (5) of the lower bridge arm IGBT (2) are both facing the right side, the configuration plate (5) of the clamping diode (3) of the U-phase component and the configuration plate (5) of the chopper IGBT (4) of the corresponding U-phase component are both facing the front side, and the configuration plate (5) of the clamping diode (3) of the V-phase component and the configuration plate (5) of the chopper IGBT (4) of the corresponding V-phase component and the configuration plate (5) of the clamping diode (3) of the W-phase component are all facing the rear side.

5. The IGBT layout structure based on the three-level inverter according to claim 3, characterized in that: The length direction of the upper bridge arm IGBT (1) and the length direction of the lower bridge arm IGBT (2) are both arranged left to right, and the length direction of the chopper IGBT (4) and the length direction of the clamping diode (3) are both arranged front to back.

6. The IGBT layout structure based on the three-level inverter according to claim 3, characterized in that: The upper bridge arm IGBT (1), the lower bridge arm IGBT (2), the clamping diode (3) and the chopper IGBT (4) are all double-tube packages.

7. The IGBT layout structure based on a three-level inverter according to any one of claims 1 to 6, characterized in that: Thyristors (6) are also attached to the top surface of the heat sink (100), and the thyristors (6) are distributed at intervals on the left side of the W-phase component.

8. The IGBT layout structure based on the three-level inverter according to claim 7, characterized in that: A current sensor (7) is also attached to the top surface of the radiator (100), and two current sensors (7) are provided and are respectively spaced apart and distributed on the right side of the U-phase component and the right side of the V-phase component.

9. The IGBT layout structure based on a three-level inverter according to any one of claims 1 to 6, characterized in that: A supporting capacitor (8) is provided on the left side of the heat sink (100).

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