Display device

Abstract

A display device is disclosed. The display device includes: a substrate including a display area and a non-display area extending from the display area; a light emitting diode disposed on the substrate and including an anode, a light emitting layer, and a cathode; a dam disposed on the substrate in the non-display area; and a step relief pattern disposed in a portion of a surface of the dam. The dam includes a first insulating layer and a second insulating layer on the first insulating layer, and the step relief pattern is disposed to surround a lower portion of a side surface of the first insulating layer and a side surface of the second insulating layer. Accordingly, a step of the dam surface is mitigated to minimize the generation of cracks and seams of the encapsulation layer and suppress the inflow of foreign matter particles through the cracks and seams of the encapsulation layer.

Description

Technical Field

[0001] The present disclosure relates to a display device, and more particularly, to a display device for alleviating a step of a dam to minimize or reduce the penetration of oxygen and moisture through a seam of an inorganic encapsulation layer. Background Art

[0002] Liquid crystal display (LCD) devices and organic light emitting display (OLED) devices, which have been widely used so far, have gradually expanded their applicable scopes.

[0003] Unlike a liquid crystal display (LCD) device including a backlight, an organic light emitting display (OLED) device does not require a separate light source. Therefore, the organic light emitting display device can be manufactured to be thin and light, has process advantages, and has low power consumption in accordance with low voltage driving. First, the organic light emitting display device includes a self-luminous element and includes a layer formed of an organic thin film, so that flexibility and elasticity are superior to other display devices.

[0004] The description provided in the description of the background technology section should not be assumed to be prior art simply because it is mentioned in the description of the background technology section or is associated with the description of the background technology section. The description of the background technology section may include information describing one or more aspects of the subject technology, and the description in this part does not limit the present invention. Summary of the invention

[0005] The inventors have recognized that the step on the dam surface causes seams and cracks in the inorganic encapsulation layer. Therefore, the present disclosure aims to provide a display device that alleviates the step on the dam surface to minimize or reduce the generation of seams and cracks in the inorganic encapsulation layer.

[0006] Another object to be achieved by the present disclosure is to provide a display device that suppresses the penetration of moisture through seams and cracks of an inorganic encapsulation layer.

[0007] Another object of the present disclosure is to provide a display device that suppresses hydrogen diffusion into transistors.

[0008] Another object of the present disclosure is to provide a display device with improved reliability and display quality.

[0009] The objects of the present disclosure are not limited to the above objects, and other objects not mentioned above can be clearly understood by those skilled in the art from the following description.

[0010] According to one aspect of the present disclosure, a display device includes: a substrate including a display area and a non-display area surrounding the display area; a light-emitting diode disposed on the substrate and including an anode, a light-emitting layer, and a cathode; a dam disposed on the substrate in the non-display area; and a step relief pattern disposed in a portion of a surface of the dam. The dam includes a first insulating layer and a second insulating layer located on the first insulating layer, and the step relief pattern is disposed to surround a side surface of the first insulating layer and a lower portion of a side surface of the second insulating layer. Therefore, the step of the dam surface is relieved to minimize or reduce the generation of seams and cracks of the encapsulation layer, and to inhibit foreign particles from flowing in through the seams and cracks of the encapsulation layer, thereby improving reliability and improving display quality.

[0011] Additional details of example embodiments are included in the Detailed Description and the Drawings.

[0012] According to an exemplary embodiment of the present disclosure, the step of the dam surface is alleviated to minimize or reduce the generation of joints and cracks.

[0013] According to the exemplary embodiment of the present disclosure, cracks generated in the encapsulation layer due to the step of the dam surface may be suppressed.

[0014] According to the exemplary embodiment of the present disclosure, degradation of transistor characteristics due to hydrogen can be suppressed.

[0015] According to the exemplary embodiments of the present disclosure, reliability and display quality may be improved.

[0016] The effects of the present disclosure are not limited to the above-mentioned effects, and other effects not mentioned above will be clearly understood by those of ordinary skill in the art from the following description.

[0017] Additional details of example embodiments are included in the Detailed Description and the Drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and other aspects, features and other advantages of the present disclosure will be more clearly understood through the following detailed description in conjunction with the accompanying drawings, in which:

[0019] Figure 1 is a schematic diagram of a display device according to an exemplary embodiment of the present disclosure;

[0020] Figure 2 is along Figure 1 A cross-sectional view taken along line II-II';

[0021] Figure 3 is along Figure 1 A cross-sectional view taken along line III-III';

[0022] Figure 4 is a cross-sectional view of a display device according to another exemplary embodiment of the present disclosure;

[0023] Figure 5 is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure;

[0024] Figure 6 is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure;

[0025] Figure 7 is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure;

[0026] Figure 8 is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure;

[0027] Fig. 9 is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure;

[0028] Fig.10 is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure;

[0029] Fig.11 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure; and

[0030] Fig.12 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure.

[0031] Throughout the drawings and detailed description, unless otherwise described, the same drawing reference numerals should be understood to refer to the same elements, features, and structures. The relative sizes and depictions of these elements may be exaggerated for clarity, illustration, and convenience. DETAILED DESCRIPTION

[0032] By referring to the exemplary embodiments described in detail below in conjunction with the accompanying drawings, the advantages and characteristics of the present disclosure and the methods for achieving the advantages and characteristics will be clear. However, the present disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. The exemplary embodiments are provided only by way of example so that those skilled in the art can fully understand the disclosure of the present disclosure and the scope of the present disclosure.

[0033] The shapes, sizes, areas, ratios, angles, quantities, etc. shown in the drawings used to describe the exemplary embodiments of the present disclosure are only examples, and the present disclosure is not limited thereto. Throughout the specification, similar reference numerals generally represent similar elements. In addition, in the following description of the present disclosure, a detailed explanation of known related art may be omitted to avoid unnecessarily obscuring the subject matter of the present disclosure. Terms such as "comprising", "having", "including", "containing", "constituting", "made of", "formed of", "composed of" used herein are generally intended to allow the addition of other components, unless such terms are used together with the term "only". Unless otherwise expressly stated, any reference to the singular may include the plural.

[0034] Even if not explicitly stated, the components are interpreted as including the ordinary error range.

[0035] When terms such as "on," "over," "above," "below," "below," "beside," "below," "near," "near," "adjacent," "on the side of," and "close" are used to describe the positional relationship between two components, one or more components may be located between the two components unless these terms are used together with the terms "immediately" or "directly."

[0036] Spatially relative terms, such as "below," "below," "under," "lower," "above," "upper," etc., may be used herein to describe the relationship of one element or feature to another element or feature as shown in the figures. It should be understood that in addition to the orientation shown in the figures, spatially relative terms may also include different orientations of elements in use or operation. For example, if the elements in the figures are inverted, elements described as "below" or "below" other elements or features will be oriented "above" other elements or features. Therefore, the exemplary term "below" may include both below and above orientations. Similarly, the exemplary terms "above" or "above" may include both "above" and "below" orientations.

[0037] When describing a temporal relationship, terms such as "after", "subsequently", "next", "following", "before", etc. may include any situation where two events are not consecutive, unless terms such as "immediately", "directly" or "directly" are explicitly used.

[0038] When an element or layer is referred to as being “on” another element or layer, the further layer or element may be directly interposed on the other element or layer.

[0039] Although the terms "first", "second", "A", "B", "a", and "b" are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, the first component to be mentioned below may be the second component in the technical concept of the present disclosure.

[0040] In addition, when describing the components of the present disclosure, terms such as first, second, A, B, (a), (b), etc. may be used herein. Each of these terms is not used to limit the nature, order or sequence of the corresponding components, but is only used to distinguish the corresponding components from other components. In the case of describing that a certain structural element or layer is "connected", "coupled", "bonded" or "joined" to another structural element or layer, it is generally interpreted that the other structural element or layer can be directly or indirectly "connected", "coupled", "bonded" or "joined" to the structural element or layer.

[0041] The term "at least one" should be understood to include any and all combinations of one or more associated listed items. For example, the meaning of "at least one of the first, second, and third items" means the combination of all items proposed from two or more of the first, second, and third items as well as the first, second, or third item.

[0042] The term "device" as used herein may refer to a display device including a display panel and a driver for driving the display panel. Examples of display devices may include light emitting devices, etc. In addition, examples of devices may include laptop computers, televisions, computer monitors, automotive devices, wearable devices, and automotive equipment devices, as well as complete electronic devices (or devices) or complete sets of devices (or devices) that include light emitting devices, etc. as complete products or final products, for example, mobile electronic devices such as smart phones or electronic tablets, but embodiments of the present disclosure are not limited thereto.

[0043] Like reference numerals generally refer to like elements throughout the specification.

[0044] For convenience of description, the size and thickness of each component shown in the drawings are shown, and the present disclosure is not limited to the size and thickness of the components shown.

[0045] The features of the various embodiments of the present disclosure may be partially or completely attached or combined with each other, and may be technically interlocked and operated in various ways, and the embodiments may be performed independently or in association with each other.

[0046] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the example embodiments belong. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an idealized or overly formal sense unless explicitly defined as such in this article.

[0047] In aspects of the present disclosure, for ease of description, source electrodes and drain electrodes are distinguished from each other. However, source electrodes and drain electrodes may be used interchangeably. A source electrode may be a drain electrode, and a drain electrode may be a source electrode. In addition, a source electrode in any aspect of the present disclosure may be a drain electrode in another aspect of the present disclosure, and a drain electrode in any aspect of the present disclosure may be a source electrode in another aspect of the present disclosure.

[0048] Hereinafter, a display device according to an exemplary embodiment of the present disclosure will be described in detail with reference to the accompanying drawings.

[0049] Figure 1 is a schematic diagram of a display device according to an exemplary embodiment of the present disclosure. Figure 2 is along Figure 1 A cross-sectional view taken along line II-II'. Figure 3 is along Figure 1 For ease of description, Figure 1 , among the various components of the display device 100, only the display panel PN, the flexible film 140 and the printed circuit board 150 are shown, but the components of the display device 100 of the present disclosure are not limited thereto. In addition, all components of each display device according to all embodiments of the present disclosure are operably connected and configured.

[0050] Reference Figure 1 , the display device 100 may include a display panel PN, a flexible film 140 and a printed circuit board 150 , and the display panel PN includes a plurality of sub-pixels SP.

[0051] The display panel PN is a device that displays an image to a user and may include a plurality of sub-pixels SP. In the display panel PN, a display area AA and a non-display area NA disposed near, surrounding, or around the display area AA may be defined.

[0052] Display area AA is the area where the image is displayed in the display device 100. In display area AA, multiple pixel areas can be arranged in a matrix form along multiple row lines and column lines. Multiple pixel areas may include pixel areas that display different colors (e.g., red (R), green (G) and blue (B) or red (R), green (G), blue (B) and white). At this time, adjacent red (R), green (G) and blue (B) pixel areas or adjacent red (R), green (G), blue (B) and white pixel areas can be used as unit pixels for displaying color images.

[0053] In the display area AA, a plurality of sub-pixels SP constituting a plurality of pixels and a circuit for driving the plurality of sub-pixels may be provided. The plurality of sub-pixels SP are the minimum units constituting the display area AA, and n sub-pixels SP may form one pixel. Each of the plurality of sub-pixels SP may emit light having a wavelength different from each other. The plurality of sub-pixels may include a first sub-pixel, a second sub-pixel, and a third sub-pixel emitting light of different colors from each other. For example, the plurality of sub-pixels SP may include a red sub-pixel SPR as a first sub-pixel, a green sub-pixel SPG as a second sub-pixel, and a blue sub-pixel SPB as a third sub-pixel. In addition, the plurality of sub-pixels SP may further include a white sub-pixel.

[0054] For example, a plurality of sub-pixels SP may include a red sub-pixel, a green sub-pixel, and a blue sub-pixel, wherein the red sub-pixel, the green sub-pixel, and the blue sub-pixel may be arranged in a repeated manner. Alternatively, a plurality of sub-pixels SP may include a red sub-pixel, a green sub-pixel, a blue sub-pixel, and a white sub-pixel, wherein the red sub-pixel, the green sub-pixel, the blue sub-pixel, and the white sub-pixel may be arranged in a repeated manner, or the red sub-pixel, the green sub-pixel, the blue sub-pixel, and the white sub-pixel may be arranged in a quadrilateral type. For example, the red sub-pixel, the blue sub-pixel, and the green sub-pixel may be arranged sequentially along the row direction, or the red sub-pixel, the blue sub-pixel, the green sub-pixel, and the white sub-pixel may be arranged sequentially along the row direction. However, in the example embodiments of the present disclosure, the color type, arrangement type, and arrangement order of the sub-pixels are not limited, and may be configured in various forms according to the luminous characteristics, device life, and device specifications.

[0055] In addition, the sub-pixels may have different light-emitting areas according to the light-emitting characteristics. For example, a sub-pixel emitting light of a color different from the color of the blue sub-pixel may have a light-emitting area different from the light-emitting area of ​​the blue sub-pixel. For example, a red sub-pixel, a blue sub-pixel, and a green sub-pixel, or a red sub-pixel, a blue sub-pixel, a white sub-pixel, and a green sub-pixel may each have a different light-emitting area.

[0056] In each of the plurality of sub-pixels SP, a light emitting diode and a thin film transistor for driving the light emitting diode may be provided. Depending on the type of the display panel, the plurality of light emitting diodes may be defined in different ways. For example, when the display panel PN is an inorganic light emitting display panel, the light emitting element may be an inorganic light emitting diode (LED) or a micro light emitting diode (micro LED), and when the display panel is an organic light emitting display panel, the light emitting diode may be an organic light emitting diode (OLED), and the embodiments of the present disclosure are not limited thereto.

[0057] A plurality of lines are provided in the display area AA, through which various signals are transmitted to the plurality of sub-pixels SP. For example, the plurality of lines may include a plurality of data lines DL through which a data voltage is supplied to each of the plurality of sub-pixels SP, a plurality of scan lines SL through which a scan signal is supplied to each of the plurality of sub-pixels SP, and the like. The plurality of scan lines SL may extend along one direction in the display area AA and may be connected to the plurality of sub-pixels SP, and the plurality of data lines DL may extend along a direction different from one direction in the display area AA and may be connected to the plurality of sub-pixels SP. In addition, although a low potential power line, a high potential power line, and the like may be further provided in the display area AA, the present disclosure is not limited thereto.

[0058] The non-display area NA is an area where no image is displayed, and thus the non-display area NA may be defined as an area extending from the display area AA. In the non-display area NA, a link line for transmitting a signal to the sub-pixel SP of the display area AA, a pad electrode, or a driver IC such as a gate driver IC and a data driver IC may be provided.

[0059] A plurality of flexible films 140 may be provided at one end of the display device 100. The plurality of flexible films 140 are films in which various components are provided on a base film having extensibility to supply signals to a plurality of sub-pixels SP of the display area AA. The plurality of flexible films 140 are provided at one end of the non-display area NA of the display device 100 to supply data voltages, etc., to a plurality of sub-pixels SP of the display area AA.

[0060] In the plurality of flexible films 140, a driver such as a gate driver or a data driver may be provided. Depending on the mounting method, the driver may be provided by chip on glass (COG), chip on film (COF), or tape carrier package (TCP) technology, but is not limited thereto. In addition, Figure 1 The shapes and numbers of the plurality of flexible films 140 shown are illustrative, and the shapes and numbers of the flexible films 140 may be changed in various forms as needed without being limited thereto.

[0061] The printed circuit board 150 may be connected to the plurality of flexible films 140. The printed circuit board 150 is a component that supplies a signal to the driving IC. Various components may be provided in the printed circuit board 150 to supply various driving signals, such as a driving signal or a data voltage, to the driving IC.

[0062] Reference Figure 1 and Figure 2 , the display panel PN may include a substrate 110. The substrate 110 is a supporting member for supporting other components of the display device 100, and may be composed of an insulating material. For example, the substrate 110 may be formed of glass, resin, or the like. In addition, the substrate 110 may be configured to include a plastic such as a polymer or polyimide (PI), or may be formed of a flexible material. In some example embodiments, the substrate 110 may be made of a flexible plastic material or a flexible polymer film. For example, the flexible polymer film may be made of any one of polyimide (PI), polyethylene terephthalate (PET), acrylonitrile-butadiene-styrene copolymer (ABS), polymethyl methacrylate (PMMA), polyethylene naphthalate (PEN), polycarbonate (PC), polyether sulfone (PES), polyarylate (PAR), polysulfone (PSF), cyclic olefin copolymer (COC), triacetyl cellulose (TAC), polyvinyl alcohol (PVA), and polystyrene (PS), and the present disclosure is not limited thereto.

[0063] A light shielding layer LS may be provided on the substrate 110. The light shielding layer LS blocks light incident on the active layer ACT of the plurality of transistors to minimize leakage current. For example, the light shielding layer LS is provided below the active layer ACT of the driving transistor DT to block light incident on the active layer ACT. If light is irradiated onto the active layer ACT, leakage current is generated, which reduces the reliability of the driving transistor DT. Therefore, a light shielding layer LS that blocks light is provided on the substrate 110 to improve the reliability of the transistor DT. The light shielding layer LS may be formed of an opaque conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr) or an alloy thereof, but is not limited thereto.

[0064] The buffer layer 111 may be disposed on the light shielding layer LS. The buffer layer 111 may reduce the penetration of moisture or impurities through the substrate 110. For example, the buffer layer 111 may be composed of a single layer, a double layer or more layers of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. For example, the buffer layer 111 may be formed by a single layer or a multilayer inorganic film, for example, the single layer of the inorganic film may be a silicon oxide (SiOx) film or a silicon nitride (SiNx) film, and the multilayer inorganic film may be formed by alternately stacking one or more layers of silicon oxide (SiOx) film, one or more layers of silicon nitride (SiNx) film and one or more layers of amorphous silicon (a-Si), but the present disclosure is not limited thereto. However, the buffer layer 111 may be omitted depending on the type of the substrate 110 or the type of the driving transistor DT, but is not limited thereto.

[0065] A driving transistor DT including an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE may be disposed on the buffer layer 111 .

[0066] First, the active layer ACT of the driving transistor DT may be disposed on the buffer layer 111. The active layer ACT may be formed of a semiconductor material, such as an oxide semiconductor, an amorphous semiconductor, or a polycrystalline semiconductor, but is not limited thereto.

[0067] Oxide semiconductor materials can have excellent effects of preventing leakage current and relatively cheap manufacturing costs. Oxide semiconductors can be made of metal oxides such as zinc (Zn), indium (In), gallium (Ga), tin (Sn) and titanium (Ti) or metals such as zinc (Zn), indium (In), gallium (Ga), tin (Sn) or titanium (Ti) and combinations of their oxides. Specifically, oxide semiconductors can include zinc oxide (ZnO), zinc tin oxide (ZTO), zinc indium oxide (ZIO), indium oxide (InO), titanium oxide (TiO), indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), indium zinc oxide (IZO), indium gallium tin oxide (IGTO) and indium gallium oxide (IGO), but are not limited thereto.

[0068] The polycrystalline semiconductor material has a fast moving speed of carriers such as electrons and holes, and thus has high mobility, and has low power consumption and excellent reliability. The polycrystalline semiconductor may be made of polycrystalline silicon (poly-Si), but is not limited thereto.

[0069] The amorphous semiconductor material may be made of amorphous silicon (a-Si), but is not limited thereto.

[0070] In addition, even if not shown in the figure, other transistors other than the driving transistor DT, such as a switching transistor, a sensing transistor, and a light emission control transistor, may be further provided. The active layers of these transistors may also be formed of semiconductor materials, such as oxide semiconductors, amorphous silicon, or polycrystalline silicon, but are not limited thereto. The active layers of transistors such as the driving transistor DT, the switching transistor, the sensing transistor, and the light emission control transistor included in the pixel circuit may be formed of the same material, or may be formed of different materials.

[0071] The gate insulating layer 112 may be disposed on the active layer ACT. The gate insulating layer 112 is an insulating layer that electrically insulates the active layer ACT from the gate electrode GE, and may be composed of a single layer, a double layer, or more layers of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. For example, the gate insulating layer 112 may be formed by a single layer or a multi-layer inorganic film, for example, the single-layer inorganic film may be a silicon oxide (SiOx) film or a silicon nitride (SiNx) film, and the multi-layer inorganic film may be formed by alternately stacking one or more layers of silicon oxide (SiOx) film, one or more layers of silicon nitride (SiNx) film, and one or more layers of amorphous silicon (a-Si), but the present disclosure is not limited thereto. In addition, even in Figure 2 2 , it is illustrated that the gate insulating layer 112 is provided only in the region overlapping with the gate electrode GE, but it is not limited thereto, and the gate insulating layer 112 may be provided to overlap with the entire substrate 110 .

[0072] The gate electrode GE may be disposed on the gate insulating layer 112. The gate electrode GE may be made of a conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0073] The interlayer insulating layer 113 may be disposed on the gate electrode GE. In the interlayer insulating layer 113, contact holes through which the source electrode SE and the drain electrode DE are each connected to the active layer ACT may be formed. The interlayer insulating layer 113 is an insulating layer that protects the components below the interlayer insulating layer 113, and may be composed of a single layer, a double layer, or more layers of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. For example, the interlayer insulating layer 113 may be formed by a single layer or a multilayer inorganic film, for example, the single layer inorganic film may be a silicon oxide (SiOx) film or a silicon nitride (SiNx) film, and the multilayer inorganic film may be formed by alternately stacking one or more layers of silicon oxide (SiOx) film, one or more layers of silicon nitride (SiNx) film, and one or more layers of amorphous silicon (a-Si), but the present disclosure is not limited thereto.

[0074] The source electrode SE and the drain electrode DE electrically connected to the active layer ACT may be disposed on the interlayer insulating layer 113. The drain electrode DE may be electrically connected to the light shielding layer LS through the contact holes of the buffer layer 111 and the interlayer insulating layer 113. The source electrode SE and the drain electrode DE may be made of a conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but are not limited thereto.

[0075] The passivation layer 114 may be disposed on the source electrode SE and the drain electrode DE. The passivation layer 114 is an insulating layer for protecting the configuration below the passivation layer 114. For example, the passivation layer 114 may be formed of an insulating inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx) or an insulating organic material, but is not limited thereto.

[0076] The first planarization layer 115a and the second planarization layer 115b may be disposed on the passivation layer 114. The first planarization layer 115a and the second planarization layer 115b may planarize the upper portion of the pixel circuit including the driving transistor DT. The first planarization layer 115a and the second planarization layer 115b may be composed of a single layer, a double layer or more layers, for example, composed of benzocyclobutene (BCB) or an acrylic organic material, but not limited thereto. At this time, the thickness of the first planarization layer 115a and the second planarization layer 115b may be about 1.3 μm to 1.8 μm, respectively, for example, the thickness of the first planarization layer 115a and the second planarization layer 115b may be about 1.5 μm, respectively, but not limited thereto. In addition, the thickness of the first planarization layer 115a and the second planarization layer 115b may be the same or different.

[0077] The connection electrode CE may be disposed between the first planarization layer 115a and the second planarization layer 115b. The connection electrode CE is disposed under the light emitting diode 120 to electrically connect the anode 121 of the light emitting diode 120 with the drain electrode DE through the contact hole of the passivation layer 114 and the first planarization layer 115a. The connection electrode CE may be formed of a material including titanium (Ti) or an alloy thereof, but is not limited thereto.

[0078] A plurality of light emitting diodes 120 are disposed in each of the plurality of sub-pixels SP on the second planarization layer 115b. The light emitting diode 120 is an element that emits light by current, and may include a red light emitting diode that emits red light, a green light emitting diode that emits green light, and a light emitting diode that emits blue light, and may realize light having various colors including white through a combination thereof. For example, the light emitting diode 120 may be an organic light emitting diode, an inorganic light emitting diode, or a micro light emitting diode, but is not limited thereto.

[0079] The light emitting diode 120 may include an anode 121 , a light emitting layer 122 , and a cathode 123 .

[0080] The anode 121 may be disposed on the second planarization layer 115b. The anode 121 is a layer for supplying holes to the light emitting layer 122. When the display device 100 is a top emission type, the anode 121 may include a reflective layer to allow the light emitted from the light emitting layer 122 to be reflected by the anode 121 to be guided upward, that is, to the cathode 123 above it. The reflective layer may be formed of an opaque conductive material with high reflectivity, such as silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr) or an alloy thereof, but is not limited thereto. Further, the anode 121 may also include a transparent conductive layer, which is disposed on the reflective layer and supplies holes to the light emitting layer 122. Therefore, the anode 121 may have a structure in which a layer formed of indium tin oxide (ITO), a layer formed of molybdenum titanium (MoTi) and a layer formed of indium tin oxide (ITO) are laminated, but is not limited thereto. When the display device 100 is a bottom emission type, a reflective layer is omitted in the anode 121 to allow light emitted from the light emitting layer 122 to be reflected by the cathode 123 to be guided downward, ie, to the anode 121 therebelow, and the anode 121 may be composed of the above-mentioned transparent conductive layer.

[0081] The embankment 116 may be disposed on the second planarization layer 115b and the anode 121. The embankment 116 may cover the edge of the anode 121 of the light emitting diode 120 to define a light emitting area. That is, the embankment 116 may divide a plurality of sub-pixels SP. The embankment 116 may be formed of an insulating material to insulate the anodes 121 of adjacent sub-pixels SP from each other. In addition, the embankment 116 may be formed of a black embankment having a high light absorption rate to suppress color mixing between adjacent sub-pixels SP. For example, the embankment 116 may be formed of a polyimide resin, an acrylic resin, or a benzocyclobutene (BCB) resin, but is not limited thereto. The thickness of the embankment 116 may be less than the thickness of each of the first planarization layer 115a and the second planarization layer 115b, for example, the thickness of the embankment 116 may be approximately to For example, the thickness of the bank 116 may be about But it is not limited to this.

[0082] In addition, even though not shown in the drawings, a spacer may be provided on the bank 116. The spacer is a layer that maintains a predetermined distance between the deposition mask and the bank 116 to suppress damage caused by contact with the deposition mask. Like the bank 116, the spacer may be formed of a polyimide resin, an acrylic resin, or a benzocyclobutene (BCB) resin, but is not limited thereto.

[0083] The light emitting layer 122 may be disposed on the anode 121. The light emitting layer 122 is a layer where electrons and holes are coupled to emit light, and may further include a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer, but is not limited thereto.

[0084] The cathode 123 may be disposed on the light emitting layer 122. The cathode 123 is a layer that supplies electrons to the light emitting layer 122. For example, when the display device is a top emission type, the cathode 123 may be formed of a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto. When the display device 100 is a bottom emission type, the cathode 123 may include a reflective layer to allow light emitted from the light emitting layer 122 to be reflected by the cathode 123 to be guided downward, that is, to the anode 121 below it, and the anode 121 may be composed of the above-mentioned transparent conductive layer. The reflective layer may be formed of an opaque conductive material having a high reflectivity, such as silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr) or an alloy thereof, but is not limited thereto.

[0085] A cover layer CPL may be disposed on the cathode 123. The cover layer CPL may improve the optical characteristics of the organic light emitting diode 120. In addition, the cover layer CPL may protect the cathode 123 from being oxidized or degraded. For example, the cover layer CPL may be formed of a material such as a polymer, silicon oxide (SiOx), or silicon nitride (SiNx), but is not limited thereto. However, the present disclosure is not limited thereto, and the cover layer CPL may be omitted according to design.

[0086] The encapsulation layer 130 may be disposed on the light emitting diode 120. The encapsulation layer 130 may protect the light emitting diode 120 from moisture, oxygen, and external impact. The encapsulation layer 130 may be formed with a multilayer structure in which an inorganic layer formed of an inorganic insulating material and an organic layer formed of an organic material are laminated. For example, the encapsulation layer 130 may be composed of at least one organic layer and at least two inorganic layers, and have a multilayer structure in which inorganic layers and organic layers are alternately laminated, but is not limited thereto. For example, the encapsulation layer 130 may have a three-layer structure, including a first inorganic encapsulation layer 131, an organic encapsulation layer 132, and a second inorganic encapsulation layer 133. In this case, the first inorganic encapsulation layer 131 and the second inorganic encapsulation layer 133 may be independently formed of one or more selected from silicon nitride (SiNx), silicon oxide (SiOx), aluminum oxide (AlOx), and silicon oxynitride (SiON), but is not limited thereto. In addition, the organic encapsulation layer 132 may be formed of one or more selected from epoxy resin, polyimide resin, polyethylene resin, and silicon oxycarbide (SiOC), but is not limited thereto.

[0087] In addition, the encapsulation layer is not limited to three layers, and for example, may include n layers (where n is an integer greater than 3) in which inorganic encapsulation layers and organic encapsulation layers are alternately stacked.

[0088] Reference Figures 1 to 3In the non-display area NA, a dam DAM may be provided on the passivation layer 114. The dam DAM is provided to control the overflow of the organic encapsulation layer 132 of the encapsulation layer 130. The dam DAM may be formed of a single layer or a plurality of layers. The dam DAM is provided to suppress the overflow of the organic encapsulation layer 132, so that the first inorganic encapsulation layer 131 and the second inorganic encapsulation layer 133 may be provided to contact each other on the dam DAM.

[0089] Specifically, the dam DAM may include a first insulating layer DAM1 and a second insulating layer DAM2. The first insulating layer DAM1 may be formed on the same layer as the first planarization layer 115a, and may be formed of the same material as the first planarization layer 115a, but is not limited thereto. For example, the first insulating layer DAM1 may be composed of a single layer, a double layer or more layers, for example, benzocyclobutene (BCB) or an acrylic organic material, but is not limited thereto. At this time, similar to the first planarization layer 115a, the thickness of the first insulating layer DAM1 may be about 1.3 μm to 1.8 μm, for example, the thickness of the first insulating layer DAM1 may be about 1.5 μm, but is not limited thereto.

[0090] The second insulating layer DAM2 may be formed on the first insulating layer DAM1 and may be formed on the same layer as the second planarization layer 115b and may be formed of the same material as the second planarization layer 115b, but is not limited thereto. For example, the second insulating layer DAM2 may be composed of a single layer, a double layer or more layers, for example, benzocyclobutene (BCB) or an acrylic organic material, but is not limited thereto. At this time, the second insulating layer DAM2 may be arranged to expose a portion of the top surface of the first insulating layer DAM1. At this time, the thickness of the second insulating layer DAM2 may be about 1.3 μm to 1.8 μm, the same as the second planarization layer 115b, for example, the thickness of the second insulating layer DAM2 may be about 1.5 μm, but is not limited thereto.

[0091] The step relief pattern SCP may be provided in a portion of the surface of the dam DAM. The step relief pattern SCP relieves the step between the first insulating layer DAM1 and the second insulating layer DAM2 of the dam DAM to suppress the generation of seams and cracks in the first inorganic encapsulation layer 131 and the second inorganic encapsulation layer 133. Specifically, the step relief pattern SCP extends from a portion of the top surface of the passivation layer 114 that is not covered by the first insulating layer DAM1 to surround the side surface of the first insulating layer DAM1 and the lower portion of the side surface of the second insulating layer DAM2. In addition, the step relief pattern may be provided to contact a portion of the top surface of the first insulating layer DAM1 that is exposed by the second insulating layer DAM2. At this time, one end of the step relief pattern SCP may be provided on the same plane as one end of the first insulating layer DAM1.

[0092] For example, the step relief pattern SCP may be formed of a conductive material different from the anode 121. In addition, in order to suppress degradation of characteristics of the driving transistor DT due to diffusion of hydrogen of the encapsulation layer 130 into the driving transistor DT, the step relief pattern SCP may include a material containing titanium (Ti) or an alloy thereof, such as molybdenum titanium (MoTi), but is not limited thereto.

[0093] In the non-display area NA, a plurality of structures ST may be disposed inside and outside the dam DAM. Figure 1 As shown, the plurality of structures ST may be arranged in a closed loop shape.

[0094] The plurality of structures ST may include a first structure ST1 , a second structure ST2 , and a third structure ST3 , but is not limited thereto.

[0095] The first structure ST1 may be disposed inside the dam DAM, that is, between the display area AA and the dam DAM. The first structure ST1 may be formed using a structure in which a first layer ST1a, a second layer ST1b, and a third layer ST1c are laminated, but is not limited thereto. The first layer ST1a is formed of the same material as the interlayer insulating layer 113, the second layer ST1b is formed on the first layer ST1a with the same material as the passivation layer 114, and the third layer ST1c is formed on the second layer ST1b with the same material as the anode 121. For example, the first layer ST1a may be composed of a single layer, a double layer, or more layers of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. For example, the first layer ST1a can be formed by a single-layer or multi-layer inorganic film. For example, the single-layer inorganic film can be a silicon oxide (SiOx) film or a silicon nitride (SiNx) film, and the multi-layer inorganic film can be formed by alternately stacking one or more layers of silicon oxide (SiOx) film, one or more layers of silicon nitride (SiNx) film and one or more layers of amorphous silicon (a-Si), but the present disclosure is not limited to this.

[0096] For example, the second layer ST1b may be formed of an insulating inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx) or an insulating organic material, but is not limited thereto.

[0097] For example, when the display device 100 is a top emission type, the anode 121 may include a reflective layer to allow the light emitted from the light emitting layer 122 to be reflected by the anode 121 to be guided upward, that is, to the cathode 123 above it. The reflective layer may be formed of an opaque conductive material having a high reflectivity, such as silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr) or an alloy thereof, but is not limited thereto. At this time, the third layer ST1c may be formed of an opaque conductive material having a high reflectivity, such as silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr) or an alloy thereof, but is not limited thereto. Further, the anode 121 may also include a transparent conductive layer, which is disposed on the reflective layer and supplies holes to the light emitting layer 122. Therefore, the anode 121 may have a structure in which a layer formed of indium tin oxide (ITO), a layer formed of molybdenum titanium (MoTi) and a layer formed of indium tin oxide (ITO) are laminated, but is not limited thereto. At this time, the third layer ST1c may have a structure in which a layer formed of indium tin oxide (ITO), a layer formed of molybdenum titanium (MoTi), and a layer formed of indium tin oxide (ITO) are laminated, but is not limited thereto. When the display device 100 is a bottom emission type, a reflective layer is omitted in the anode 121 to allow light emitted from the light emitting layer 122 to be reflected by the cathode 123 to be guided downward, that is, to the anode 121 thereunder, and the anode 121 may be composed of the above-mentioned transparent conductive layer. At this time, the third layer ST1c may be composed of the above-mentioned transparent conductive layer.

[0098] The second structure ST2 and the third structure ST3 may be provided to surround the dam DAM at the outer side of the dam DAM.

[0099] The second structure ST2 may be formed using a structure in which a first layer ST2a, a second layer ST2b, and a third layer ST2c are laminated, but is not limited thereto. The first layer ST2a is formed of the same material as the interlayer insulating layer 113, the second layer ST2b is formed on the first layer ST2a with the same material as the passivation layer 114, and the third layer ST2c is formed on the second layer ST2b with the same material as the anode 121.

[0100] The third structure ST3 may be formed to surround the second structure ST2 at the outermost periphery of the substrate 110. The third structure ST3 may be formed using a structure in which a first layer ST3a, a second layer ST3b, and a third layer ST3c are laminated, but is not limited thereto. The first layer ST3a is formed of the same material as the interlayer insulating layer 113, and the second layer ST3b is formed on the first layer ST3a with the same material as the passivation layer 114, and the third layer ST3c is formed on the second layer ST3b with the same material as the anode 121.

[0101] The plurality of structures ST may be formed with an undercut shape to extend the permeation path of moisture or oxygen from the outside of the display device 100, thereby delaying the permeation of moisture and oxygen. That is, the area of ​​the bottom surface of the third layer ST1c of the first structure ST1 may be greater than the area of ​​the top surface of the second layer ST1b of the first structure ST1. The area of ​​the bottom surface of the third layer ST2c of the second structure ST2 may be greater than the area of ​​the top surface of the second layer ST2b of the second structure ST2. The area of ​​the bottom surface of the third layer ST3c of the third structure ST3 may be greater than the area of ​​the top surface of the second layer ST3b of the third structure ST3. However, the present disclosure is not limited thereto. At this time, the first inorganic encapsulation layer 131 is provided to surround the surface of the plurality of structures ST, and the second inorganic encapsulation layer 133 is provided to surround the surface of the second structure ST2 and the third structure ST3. Therefore, the permeation path of moisture and oxygen from the outside of the display device 100 is extended to delay the permeation of moisture and oxygen.

[0102] The pad electrode PAD may be disposed outside the plurality of structures ST. Figure 3 Not shown, but Figure 1 As shown, a plurality of flexible films 140 may be disposed on the pad electrode PAD. The pad electrode PAD may include a first conductive layer PE1, a second conductive layer PE2, and a third conductive layer PE3. The first conductive layer PE1 may be formed of the same material as the active layer ACT, but is not limited thereto. For example, the first conductive layer PE1 may be formed of a semiconductor material, such as an oxide semiconductor, an amorphous semiconductor, or a polycrystalline semiconductor, but is not limited thereto. The second conductive layer PE2 may be disposed on the first conductive layer PE1. The second conductive layer PE2 may be formed of the same material as the gate electrode GE, but is not limited thereto. The second conductive layer PE2 may be composed of a conductive material, such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto. The third conductive layer PE3 may be disposed on the second conductive layer PE2. The third conductive layer PE3 may be formed of the same material as the source electrode SE and the drain electrode DE, but is not limited thereto. For example, the third conductive layer PE3 may be made of a conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr) or an alloy thereof, but is not limited thereto.

[0103] At this time, the first inorganic encapsulation layer 131 and the second inorganic encapsulation layer 133 disposed between the plurality of structures ST and the pad electrode PAD may be removed by an etching process. That is, the first inorganic encapsulation layer 131 and the second inorganic encapsulation layer 133 disposed outside the third structure ST3 may be disconnected. This is to suppress the lifting phenomenon from propagating to the display area AA even if the first inorganic encapsulation layer 131 and the second inorganic encapsulation layer 133 are lifted during the pad opening process.

[0104] In the process of manufacturing the display device, foreign matter may be introduced through various paths. At this time, in order to suppress the degradation of the light-emitting diode due to the penetration of oxygen or moisture, an encapsulation layer may be provided on the light-emitting diode. Typically, the encapsulation layer is formed with a multilayer structure in which an inorganic encapsulation layer formed of an inorganic insulating material and an organic encapsulation layer formed of an organic insulating material are laminated. At this time, the organic encapsulation layer is generally coated on a substrate in a liquid state and then formed by a curing process. The organic encapsulation layer has fluidity before the curing process, so that there may be an overflow problem on the area where the encapsulation layer is to be formed. In order to suppress the overflow of the organic encapsulation layer, a dam may be provided in a non-display area. Typically, the dam has a double-layer structure laminated with a plurality of organic insulating layers. For example, the dam DAM includes a first insulating layer DAM1 and a second insulating layer DAM2. However, the number of layers of the dam DAM is not limited thereto.

[0105] In addition, an inorganic encapsulation layer is formed by deposition. When there are steps on the surface of the deposited inorganic encapsulation layer, there is a problem of uneven deposition of the inorganic encapsulation layer. Specifically, near the boundary with the steps, seams or cracks may be generated in the inorganic encapsulation layer. Unlike the organic encapsulation layer, the inorganic encapsulation layer is arranged outside the dam. At this time, when the steps between the multiple organic insulating layers constituting the dam are large, seams or cracks are generated in the inorganic encapsulation layer during the deposition process of the inorganic encapsulation layer. In addition, when oxygen or moisture penetrates through the seams or cracks to propagate to the light-emitting layer arranged in the display area, the reliability of the display device may be reduced.

[0106] Therefore, in the display device 100 according to the exemplary embodiment of the present disclosure, the step relief pattern SCP is provided on the surface of the dam DAM to relieve the step between the first insulating layer DAM1 and the second insulating layer DAM2 constituting the dam DAM. Therefore, it is possible to suppress the generation of seams and cracks in the first inorganic encapsulation layer 131 and the second inorganic encapsulation layer 133. Therefore, it is possible to suppress the penetration of moisture through the seams and cracks of the first inorganic encapsulation layer 131 and the second inorganic encapsulation layer 133.

[0107] That is, in the display device 100 according to the exemplary embodiment of the present disclosure, the step relief pattern SCP is disposed on the surface of the dam DAM to minimize or reduce inflow of foreign matter through seams and cracks of the encapsulation layer 130. Therefore, reliability can be improved and display quality can be enhanced.

[0108] In addition, in the display device 100 according to the exemplary embodiment of the present disclosure, a step relief pattern SCP including titanium (Ti) or an alloy thereof is provided on the surface of the dam DAM to capture hydrogen generated in the encapsulation layer 130. Therefore, the diffusion of hydrogen of the encapsulation layer 130 to the driving transistor DT is suppressed to minimize or reduce the degradation of the characteristics of the driving transistor DT due to hydrogen. In addition, in the display device 100 according to the exemplary embodiment of the present disclosure, a plurality of structures ST having an undercut shape are provided inside and outside the dam DAM. For example, the plurality of structures ST may include a first structure ST1, a second structure ST2, and a third structure ST3. For example, the area of ​​the bottom surface of the third layer ST1c of the first structure ST1 may be greater than the area of ​​the top surface of the second layer ST1b of the first structure ST1. The area of ​​the bottom surface of the third layer ST2c of the second structure ST2 may be greater than the area of ​​the top surface of the second layer ST2b of the second structure ST2. The area of ​​the bottom surface of the third layer ST3c of the third structure ST3 may be greater than the area of ​​the top surface of the second layer ST3b of the third structure ST3. In addition, the first and second inorganic encapsulating layers 131 and 133 are disposed to surround the surface of the plurality of structures ST having an undercut shape to extend a path through which oxygen or moisture permeates. That is, the permeation of oxygen or moisture through the encapsulating layer 130 may be delayed.

[0109] Figure 4 is a cross-sectional view of a display device according to another exemplary embodiment of the present disclosure. Figure 4 The display device 200 and Figures 1 to 3 The difference between the display devices 100 is the step relief pattern SCP, but other components are substantially the same, and thus redundant description will be omitted.

[0110] refer to Figure 4 , the step relief pattern SCP may be formed of the same material as the anode 121. Therefore, the step relief pattern SCP may be formed simultaneously in the deposition process of the anode 121 without adding a separate mask. In addition, in order to suppress the degradation of the characteristics of the driving transistor DT due to the diffusion of hydrogen of the encapsulation layer 130 into the driving transistor DT, the step relief pattern SCP may include a material containing titanium (Ti) or an alloy thereof, such as molybdenum titanium (MoTi), but is not limited thereto.

[0111] In the display device 200 according to another exemplary embodiment of the present disclosure, a step relief pattern SCP formed of a material including titanium (Ti) or an alloy thereof is provided on the surface of the dam DAM to minimize or reduce the inflow of foreign matter through the seams and cracks of the encapsulation layer 130. Therefore, reliability can be improved, and characteristic degradation of the driving transistor DT due to hydrogen diffusion of the encapsulation layer 130 can be improved.

[0112] Specifically, in the display device 200 according to another exemplary embodiment of the present disclosure, the step mitigation pattern SCP is formed simultaneously with the anode 121 without a separate mask adding process, so that process efficiency may be improved and manufacturing cost may be reduced.

[0113] Figure 5 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure. Figure 5 The display device 300 and Figure 4 The difference between the display devices 200 is the number of dams DAM, but other components are substantially the same, so redundant description will be omitted.

[0114] refer to Figure 5 , a plurality of dams DAM may be provided to minimize or reduce overflow of the organic encapsulation layer 132. Figure 5 Two dams DAM are shown in FIG. 1 , but the number of dams DAM is not limited thereto. For example, three or more dams DAM may be provided.

[0115] Furthermore, although not shown in the drawings, a structure ST may be added between the plurality of dams DAM.

[0116] In the display device 300 according to still another exemplary embodiment of the present disclosure, a step relief pattern SCP formed of a material including titanium (Ti) or an alloy thereof is provided on the surface of the dam DAM to minimize or reduce the inflow of foreign matter through the seams and cracks of the encapsulation layer 130. Therefore, reliability can be improved, and characteristic degradation of the driving transistor DT due to hydrogen diffusion of the encapsulation layer 130 can be improved.

[0117] Specifically, in the display device 300 according to still another exemplary embodiment of the present disclosure, a plurality of dams DAM are provided to more effectively suppress overflow of the organic encapsulation layer 132 .

[0118] Figure 6 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure. Figure 6 The display device 400 and Figure 4 The difference between the display devices 200 is the presence or absence of the third insulating layer DAM3 and the fourth insulating layer DAM4 in the configuration of the dam DAM, but other components are substantially the same, and thus redundant description will be omitted.

[0119] Reference Figure 6 The dam DAM may include a first insulating layer DAM1, a second insulating layer DAM2, a third insulating layer DAM3, and a fourth insulating layer DAM4.

[0120] The first insulating layer DAM1 may be formed on the same layer as the first planarization layer 115a and may be formed of the same material as the first planarization layer 115a, but is not limited thereto. At this time, the thickness of the first insulating layer DAM1 may be about 1.5 μm, but is not limited thereto.

[0121] The second insulating layer DAM2 may be disposed on the first insulating layer DAM1 and may be formed on the same layer as the second planarization layer 115b and may be formed of the same material as the second planarization layer 115b, but is not limited thereto. At this time, the second insulating layer DAM2 may be disposed to expose a portion of the top surface of the first insulating layer DAM1. At this time, the thickness of the second insulating layer DAM2 may be about 1.5 μm, similar to the first insulating layer DAM1, but is not limited thereto.

[0122] The third insulating layer DAM3 may be disposed on the second insulating layer DAM2 and may be formed on the same layer with the same material as the bank 116, but is not limited thereto. For example, the third insulating layer DAM3 may be formed of an insulating material. For example, the third insulating layer DAM3 may be formed of a polyimide resin, an acrylic resin, or a benzocyclobutene (BCB) resin, but is not limited thereto.

[0123] The fourth insulating layer DAM4 may be disposed on the third insulating layer DAM3 and may be formed on the same layer with the spacer using the same material, but is not limited thereto. For example, the fourth insulating layer DAM4 may be formed of an insulating material. For example, the fourth insulating layer DAM4 may be formed of a polyimide resin, an acrylic resin, or a benzocyclobutene (BCB) resin, but is not limited thereto.

[0124] Therefore, the third and fourth insulating layers DAM3 and DAM4 may be thinner than the first and second insulating layers DAM1 and DAM2 , but are not limited thereto.

[0125] In addition, the thickness of the third insulating layer DAM3 and the fourth insulating layer DAM4 is less than the thickness of the first insulating layer DAM1 and the second insulating layer DAM2. Therefore, seams and cracks caused by the steps of the third insulating layer DAM3 and the fourth insulating layer DAM4 may not be generated in the first inorganic encapsulation layer 131 and the second inorganic encapsulation layer 133. Therefore, the step relief pattern SCP contacting the side surface of the third insulating layer DAM3 and the fourth insulating layer DAM4 may not be required.

[0126] In the display device 400 according to still another exemplary embodiment of the present disclosure, a step relief pattern SCP formed of a material including titanium (Ti) or an alloy thereof may be provided on the surface of the dam DAM to minimize or reduce the inflow of foreign matter through seams and cracks of the encapsulation layer 130. Therefore, reliability may be improved, and characteristic degradation of the driving transistor DT due to hydrogen diffusion of the encapsulation layer 130 may be improved.

[0127] Specifically, in the display device 400 according to another exemplary embodiment of the present disclosure, the dam DAM may include not only the first insulating layer DAM1 and the second insulating layer DAM2 but also the third insulating layer DAM3 and the fourth insulating layer DAM4 to be configured higher. Therefore, it is more effective to suppress overflow of the organic encapsulation layer 130.

[0128] Figure 7 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure. Figure 7 The display device 500 and Figure 4 The difference between the display devices 200 is the presence or absence of the metal layer ML, but other configurations are substantially the same, so redundant description will be omitted.

[0129] refer to Figure 7 , the metal layer ML may be disposed between the first insulating layer DAM1 and the second insulating layer DAM2 of the dam DAM. Specifically, the metal layer ML may be disposed on the same layer as the connection electrode CE, and may be formed of the same material as the connection electrode CE. For example, the metal layer ML may be formed of a material including titanium (Ti) or an alloy thereof, but is not limited thereto. The metal layer ML may capture hydrogen so as not to degrade the characteristics of the transistor DT due to hydrogen of the encapsulation layer 130. Therefore, the metal layer ML may be formed of a material that can provide a stable bond with hydrogen, such as a material including titanium (Ti) or an alloy thereof, but is not limited thereto.

[0130] In the display device 500 according to still another exemplary embodiment of the present disclosure, a step relief pattern SCP formed of a material including titanium (Ti) or an alloy thereof is provided on the surface of the dam DAM to minimize or reduce the inflow of foreign matter through the seams and cracks of the encapsulation layer 130. Therefore, reliability can be improved, and characteristic degradation of the driving transistor DT due to hydrogen diffusion of the encapsulation layer 130 can be improved.

[0131] Specifically, in the display device 500 according to another exemplary embodiment of the present disclosure, a metal layer ML including titanium (Ti) or an alloy thereof is further provided between the first insulating layer DAM1 and the second insulating layer DAM2 of the dam DAM. Therefore, hydrogen of the encapsulation layer 130 is more effectively captured, so that the characteristic degradation of the driving transistor DT caused by hydrogen diffusion can be further advantageously improved.

[0132] Figure 8 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure. Figure 8 The display device 600 and Figures 1 to 3 The difference between the display devices 100 is the placement of the light emitting layer 122, the cathode 123, and the cover layer CPL, but other components are substantially the same, so redundant description will be omitted. Figure 8 is the edge of the display device 600 Figure 1 A cross-sectional view of a region taken along line VIII-VIII' is shown.

[0133] refer to Figure 8 , the light emitting layer 122 , the cathode 123 , and the capping layer CPL may be disposed over the entire surface of the substrate 110 .

[0134] In order to reduce the bezel area, according to another exemplary embodiment of the present disclosure, after the light emitting layer 122, the cathode 123, and the cover layer CPL are placed over the entire surface of the substrate 110, the outer area is cut by a scribing method to manufacture the display device 600. Therefore, one end of the light emitting layer 122, one end of the cathode 123, and one end of the cover layer CPL may be disposed on the same plane as one end of the substrate 110.

[0135] At this time, the light emitting layer 122, the cathode 123, and the cover layer CPL may be disconnected during the formation process due to the undercut shape of the plurality of structures ST. That is, the light emitting layer 122, the cathode 123, and the cover layer CPL may be partially disposed above the plurality of structures ST and may be disposed spaced apart from each other relative to the plurality of structures ST. For example, the light emitting layer 122, the cathode 123, and the cover layer CPL may be disposed discontinuously between the plurality of structures ST, and may be disposed to cover a portion of the top surface of the buffer layer 111 disposed between the plurality of structures ST, but is not limited thereto. Therefore, it is possible to suppress moisture and oxygen from penetrating from the outside of the display device 600 through the light emitting layer 122 disposed in the non-display area NA into the display area AA.

[0136] In the display device 600 according to another exemplary embodiment of the present disclosure, the step relief pattern SCP is provided on the surface of the dam DAM to relieve the step between the first insulating layer DAM1 and the second insulating layer DAM2 constituting the dam DAM. Therefore, it is possible to suppress the generation of seams and cracks in the first inorganic encapsulation layer 131 and the second inorganic encapsulation layer 133. Therefore, it is possible to suppress the penetration of moisture through the seams and cracks of the first inorganic encapsulation layer 131 and the second inorganic encapsulation layer 133.

[0137] That is, in the display device 600 according to still another exemplary embodiment of the present disclosure, the step relief pattern SCP is disposed on the surface of the dam DAM to minimize or reduce inflow of foreign matter through seams and cracks of the encapsulation layer 130. Therefore, reliability may be improved and display quality may be enhanced.

[0138] Furthermore, in the display device 600 according to still another exemplary embodiment of the present disclosure, a step relief pattern SCP including titanium (Ti) or an alloy thereof is provided on the surface of the dam DAM to capture hydrogen generated in the encapsulation layer 130. Therefore, diffusion of hydrogen of the encapsulation layer 130 to the driving transistor DT is suppressed to minimize or reduce degradation of characteristics of the driving transistor DT due to hydrogen.

[0139] In addition, in the display device 600 according to another exemplary embodiment of the present disclosure, a plurality of structures ST having an undercut shape are provided inside and outside the dam DAM. For example, the plurality of structures ST may include a first structure ST1, a second structure ST2, and a third structure ST3. For example, the area of ​​the bottom surface of the third layer ST1c of the first structure ST1 may be greater than the area of ​​the top surface of the second layer ST1b of the first structure ST1. The area of ​​the bottom surface of the third layer ST2c of the second structure ST2 may be greater than the area of ​​the top surface of the second layer ST2b of the second structure ST2. The area of ​​the bottom surface of the third layer ST3c of the third structure ST3 may be greater than the area of ​​the top surface of the second layer ST3b of the third structure ST3. In addition, the first inorganic encapsulation layer 131 and the second inorganic encapsulation layer 133 are provided to surround the surface of the plurality of structures ST having an undercut shape to extend the path through which oxygen or moisture permeates. That is, the penetration of oxygen or moisture through the encapsulation layer 130 may be delayed.

[0140] Specifically, in the display device 600 according to another exemplary embodiment of the present disclosure, even if the light emitting layer 122 is formed on the entire surface of the substrate 110, the light emitting layer is provided to be spaced apart by the plurality of structures ST. Therefore, it is possible to suppress the penetration of moisture and oxygen from the outside into the display area AA through the light emitting layer 122 provided in the non-display area NA.

[0141] Fig. 9 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure. Fig. 9 The display device 700 and Figure 8 The difference between the display devices 600 is the step relief pattern SCP, but other components are substantially the same, so redundant description will be omitted.

[0142] refer to Fig. 9, the step relief pattern SCP may be formed of the same material as the anode 121. Therefore, the step relief pattern SCP may be formed simultaneously in the deposition process of the anode 121 without adding a separate mask. In addition, in order to suppress the degradation of the characteristics of the driving transistor DT due to the diffusion of hydrogen of the encapsulation layer 130 into the driving transistor DT, the step relief pattern SCP may include a material containing titanium (Ti) or an alloy thereof, such as molybdenum titanium (MoTi), but is not limited thereto.

[0143] In the display device 700 according to still another exemplary embodiment of the present disclosure, a step relief pattern SCP formed of a material including titanium (Ti or an alloy thereof) is provided on the surface of the dam DAM to minimize or reduce the inflow of foreign matter through the seams and cracks of the encapsulation layer 130. Therefore, reliability can be improved, and characteristic degradation of the driving transistor DT due to hydrogen diffusion of the encapsulation layer 130 can be improved.

[0144] Specifically, in the display device 700 according to still another exemplary embodiment of the present disclosure, the step mitigation pattern SCP is formed simultaneously with the anode 121 without a separate mask adding process, so that process efficiency may be improved and manufacturing cost may be reduced.

[0145] In addition, in the display device 700 according to another exemplary embodiment of the present disclosure, even if the light emitting layer 122 is formed on the entire surface of the substrate 110, the light emitting layer is provided to be spaced apart by the plurality of structures ST. Therefore, it is possible to suppress the penetration of moisture and oxygen from the outside into the display area AA through the light emitting layer 122 provided in the non-display area NA.

[0146] Fig.10 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure. Fig.10 The display device 800 and Fig. 9 The difference between the display devices 700 is the number of dams DAM, but other components are substantially the same, so redundant description will be omitted.

[0147] refer to Fig.10 , a plurality of dams DAM may be provided to minimize or reduce overflow of the organic encapsulation layer 132. Fig.10 Two dams DAM are shown in FIG. 1 , but the number of dams DAM is not limited thereto. For example, three or more dams DAM may be provided.

[0148] Furthermore, although not shown in the drawings, a structure ST may be added between the plurality of dams DAM.

[0149] In the display device 800 according to still another exemplary embodiment of the present disclosure, a step relief pattern SCP formed of a material including titanium (Ti) or an alloy thereof is provided on the surface of the dam DAM to minimize or reduce the inflow of foreign matter through the seams and cracks of the encapsulation layer 130. Therefore, reliability can be improved, and characteristic degradation of the driving transistor DT due to hydrogen diffusion of the encapsulation layer 130 can be improved.

[0150] Specifically, in the display device 800 according to still another exemplary embodiment of the present disclosure, a plurality of dams DAM are provided to more effectively suppress overflow of the organic encapsulation layer 132 .

[0151] In addition, in the display device 800 according to another exemplary embodiment of the present disclosure, even if the light emitting layer 122 is formed over the entire surface of the substrate 110, the light emitting layer is provided to be spaced apart by a plurality of structures ST. Therefore, it is possible to suppress the penetration of moisture and oxygen from the outside into the display area AA through the light emitting layer 122 provided in the non-display area NA.

[0152] Fig.11 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure. Fig.11 The display device 900 and Fig. 9 The difference between the display devices 700 is the presence or absence of the third insulating layer DAM3 and the fourth insulating layer DAM4 in the configuration of the dam DAM, but other components are substantially the same, and thus redundant description will be omitted.

[0153] Reference Fig.11 The dam DAM may include a first insulating layer DAM1, a second insulating layer DAM2, a third insulating layer DAM3, and a fourth insulating layer DAM4.

[0154] The first insulating layer DAM1 may be formed on the same layer as the first planarization layer 115a and may be formed of the same material as the first planarization layer 115a, but is not limited thereto. At this time, the thickness of the first insulating layer DAM1 may be about 1.5 μm, but is not limited thereto.

[0155] The second insulating layer DAM2 may be disposed on the first insulating layer DAM1 and may be formed on the same layer as the second planarization layer 115b and may be formed of the same material as the second planarization layer 115b, but is not limited thereto. At this time, the second insulating layer DAM2 may be disposed to expose a portion of the top surface of the first insulating layer DAM1. At this time, the thickness of the second insulating layer DAM2 may be about 1.5 μm, similar to the first insulating layer DAM1, but is not limited thereto.

[0156] The third insulating layer DAM3 may be disposed on the second insulating layer DAM2 and may be formed on the same layer with the same material as the bank 116, but is not limited thereto. For example, the third insulating layer DAM3 may be formed of an insulating material. For example, the third insulating layer DAM3 may be formed of a polyimide resin, an acrylic resin, or a benzocyclobutene (BCB) resin, but is not limited thereto.

[0157] The fourth insulating layer DAM4 may be disposed on the third insulating layer DAM3 and may be formed on the same layer with the spacer using the same material, but is not limited thereto. For example, the fourth insulating layer DAM4 may be formed of an insulating material. For example, the fourth insulating layer DAM4 may be formed of a polyimide resin, an acrylic resin, or a benzocyclobutene (BCB) resin, but is not limited thereto.

[0158] Therefore, the third and fourth insulating layers DAM3 and DAM4 may be thinner than the first and second insulating layers DAM1 and DAM2 , but are not limited thereto.

[0159] In addition, the thickness of the third insulating layer DAM3 and the fourth insulating layer DAM4 is less than the thickness of the first insulating layer DAM1 and the second insulating layer DAM2. Therefore, seams and cracks due to the steps of the third insulating layer DAM3 and the fourth insulating layer DAM4 may not be generated in the first inorganic encapsulation layer 131 and the second inorganic encapsulation layer 133. Therefore, the step relief pattern SCP contacting the side surface of the third insulating layer DAM3 and the fourth insulating layer DAM4 may not be required.

[0160] In the display device 900 according to still another exemplary embodiment of the present disclosure, a step relief pattern SCP formed of a material including titanium (Ti) or an alloy thereof is provided on the surface of the dam DAM to minimize or reduce the inflow of foreign matter through the seams and cracks of the encapsulation layer 130. Therefore, reliability can be improved, and characteristic degradation of the driving transistor DT due to hydrogen diffusion of the encapsulation layer 130 can be improved.

[0161] Specifically, in the display device 900 according to another exemplary embodiment of the present disclosure, the dam DAM includes not only the first insulating layer DAM1 and the second insulating layer DAM2 but also the third insulating layer DAM3 and the fourth insulating layer DAM4 to be configured higher. Therefore, it is more effective to suppress overflow of the organic encapsulation layer 130.

[0162] In addition, in the display device 900 according to another exemplary embodiment of the present disclosure, even if the light emitting layer 122 is formed on the entire surface of the substrate 110, the light emitting layer is provided to be spaced apart by the plurality of structures ST. Therefore, it is possible to suppress the penetration of moisture and oxygen from the outside into the display area AA through the light emitting layer 122 provided in the non-display area NA.

[0163] Fig.12 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure. Fig.12 The display device 1000 and Fig. 9 The only difference between the display devices 700 is the presence or absence of the metal layer ML, but other configurations are substantially the same, so redundant description will be omitted.

[0164] refer to Fig.12 , the metal layer ML may be disposed between the first insulating layer DAM1 and the second insulating layer DAM2 of the dam DAM. Specifically, the metal layer ML is disposed on the same layer as the connection electrode CE and may be formed of the same material as the connection electrode CE. The metal layer ML may capture hydrogen so as not to degrade the characteristics of the transistor DT due to hydrogen of the encapsulation layer 130. Therefore, the metal layer ML may be formed of a material that can form a stable bond with hydrogen, such as a material including titanium (Ti) or an alloy thereof, but is not limited thereto.

[0165] In the display device 1000 according to still another exemplary embodiment of the present disclosure, a step relief pattern SCP formed of a material including titanium (Ti) or an alloy thereof is provided on the surface of the dam DAM to minimize or reduce the inflow of foreign matter through seams and cracks of the encapsulation layer 130. Therefore, reliability can be improved, and characteristic degradation of the driving transistor DT due to hydrogen diffusion of the encapsulation layer 130 can be improved.

[0166] Specifically, in the display device 1000 according to another exemplary embodiment of the present disclosure, a metal layer ML including titanium (Ti) or an alloy thereof is further provided between the first insulating layer DAM1 and the second insulating layer DAM2 of the dam DAM. Therefore, hydrogen of the encapsulation layer 130 is more effectively captured, so that the characteristic degradation of the driving transistor DT caused by hydrogen diffusion can be further advantageously improved.

[0167] In addition, in the display device 1000 according to another exemplary embodiment of the present disclosure, even if the light-emitting layer 122 is formed over the entire surface of the substrate 110, the light-emitting layer is arranged to be separated by a plurality of structures ST, and thus, moisture and oxygen can be suppressed from penetrating from the outside into the display area AA through the light-emitting layer 122 arranged in the non-display area NA.

[0168] Exemplary embodiments of the present disclosure may also be described as follows:

[0169] According to one aspect of the present disclosure, a display device is provided. The display device includes: a substrate including a display area and a non-display area extending from the display area; a light-emitting diode disposed on the substrate and including an anode, a light-emitting layer, and a cathode; a dam disposed in the non-display area of ​​the substrate; and a step relief pattern disposed in a portion of a surface of the dam. The dam includes a first insulating layer and a second insulating layer located on the first insulating layer, and the step relief pattern is disposed to surround the side surface of the first insulating layer and the lower portion of the side surface of the second insulating layer.

[0170] The second insulating layer may be disposed to expose a portion of a top surface of the first insulating layer.

[0171] The step relief pattern may contact a portion of a top surface of the first insulating layer exposed by the second insulating layer.

[0172] One end of the step relief pattern may be disposed on the same plane as one end of the first insulating layer.

[0173] The step relief pattern may be formed of the same material as the anode.

[0174] The step relief pattern may be formed of a conductive material different from that of the anode.

[0175] The step relief pattern may be formed of a material including titanium (Ti).

[0176] The display device may further include a bank and a spacer disposed in the display region of the substrate. The dam may further include a third insulating layer disposed on the second insulating layer and formed of the same material as the bank and a fourth insulating layer disposed on the third insulating layer and formed of the same material as the spacer.

[0177] The display device may further include a metal layer disposed between the first insulating layer and the second insulating layer.

[0178] The display device may further include a connection electrode disposed below the light emitting diode to be electrically connected to the anode. The metal layer may be disposed on the same layer with the connection electrode using the same material.

[0179] The metal layer may be formed of a material including titanium (Ti).

[0180] The display device may further include a covering layer disposed on the light emitting diode. One end of the light emitting layer, one end of the cathode, and one end of the covering layer may be disposed on the same plane as one end of the substrate.

[0181] The display device may further include a plurality of structures disposed at inner and outer sides of the dam. The plurality of structures may be formed with an undercut shape.

[0182] Each of the plurality of structures may include an upper layer and a lower layer, and an area of ​​a bottom surface of the upper layer is greater than an area of ​​a top surface of the lower layer.

[0183] The upper layer and the lower layer are formed of different materials.

[0184] The upper layer is formed of a conductive material, and the lower layer is formed of an insulating material.

[0185] Each of the plurality of structures may include a first layer, a second layer, and a third layer, and an area of ​​a bottom surface of the third layer is greater than an area of ​​a top surface of the second layer.

[0186] The third layer is formed of a conductive material, and the first layer and the second layer are formed of an insulating material.

[0187] The third layer is formed of the same material as that of the anode, and the first layer and the second layer are formed of an insulating material.

[0188] The display device may further include a cover layer disposed on the light emitting diode. The light emitting layer, the cathode and the cover layer may be disposed to be spaced apart from each other by a plurality of structures.

[0189] Although the exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and can be embodied in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all aspects and do not limit the present disclosure. All technical concepts within the equivalent scope of the present disclosure should be understood to fall within the scope of the present disclosure.

[0190] CROSS-REFERENCE TO RELATED APPLICATIONS

[0191] This application claims the benefit of priority from Korean Patent Application No. 10-2023-0123962 filed in the Korean Intellectual Property Office on September 18, 2023, the entire contents of which are expressly incorporated herein for all purposes.

Claims

1. A display device, comprising: a substrate, the substrate comprising a display area and a non-display area extending from the display area; a light emitting diode, the light emitting diode being disposed on the substrate and comprising an anode, a light emitting layer and a cathode; a dam, the dam being disposed in the non-display area of ​​the substrate; as well as a step relief pattern provided in a portion of a surface of the dam, The dam includes a first insulating layer and a second insulating layer located on the first insulating layer, and the step relief pattern is arranged to surround a side surface of the first insulating layer and a lower portion of a side surface of the second insulating layer.

2. The display device according to claim 1, wherein: The second insulating layer is disposed to expose a portion of a top surface of the first insulating layer.

3. The display device according to claim 2, wherein: The step relief pattern contacts the portion of the top surface of the first insulating layer exposed by the second insulating layer.

4. The display device according to claim 1, wherein: One end of the step relief pattern and one end of the first insulating layer are arranged on the same plane.

5. The display device according to claim 1, wherein: The step relief pattern is formed of the same material as that of the anode.

6. The display device according to claim 1, wherein: The step relief pattern is formed of a conductive material different from a material of the anode.

7. The display device according to claim 1, wherein: The step relief pattern is formed of a material including titanium Ti.

8. The display device according to claim 1, further comprising: banks and spacers disposed in the display region of the substrate, The dam further includes a third insulating layer disposed on the second insulating layer and formed of the same material as that of the bank, and a fourth insulating layer disposed on the third insulating layer and formed of the same material as that of the spacer.

9. The display device according to claim 1, further comprising: A metal layer is disposed between the first insulating layer and the second insulating layer.

10. The display device according to claim 9, further comprising: a connecting electrode, the connecting electrode being arranged below the light emitting diode to be electrically connected to the anode, The metal layer and the connecting electrode are made of the same material and arranged on the same layer.

11. The display device according to claim 9, wherein: The metal layer is formed of a material including titanium Ti.

12. The display device according to claim 1, further comprising: a covering layer, the covering layer being arranged on the light emitting diode, Wherein, one end of the light-emitting layer, one end of the cathode, one end of the covering layer and one end of the substrate are arranged on the same plane.

13. The display device according to claim 1, further comprising: A plurality of structures are arranged on the inner and outer sides of the dam, Wherein, the plurality of structures are formed with an undercut shape.

14. The display device according to claim 13, in, Each of the plurality of structures includes an upper layer and a lower layer, and Wherein, the area of ​​the bottom surface of the upper layer is larger than the area of ​​the top surface of the lower layer.

15. The display device according to claim 14, wherein: The upper layer and the lower layer are formed of different materials.

16. The display device according to claim 15, wherein: The upper layer is formed of a conductive material, and the lower layer is formed of an insulating material.

17. The display device according to claim 13, in, Each of the plurality of structures includes a first layer, a second layer, and a third layer, and Wherein, an area of ​​a bottom surface of the third layer is greater than an area of ​​a top surface of the second layer.

18. The display device according to claim 17, wherein: The third layer is formed of a conductive material, and the first layer and the second layer are formed of an insulating material.

19. The display device according to claim 17, in, The third layer is formed of the same material as that of the anode, and Wherein, the first layer and the second layer are formed of insulating material.

20. The display device according to claim 13, further comprising: a covering layer, the covering layer being arranged on the light emitting diode, The light emitting layer, the cathode and the cover layer are spaced apart from each other by the plurality of structures.

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