Wafer electroplating device and control method thereof

Abstract

The invention discloses a wafer electroplating device and a control method thereof. The wafer electroplating device comprises a support for supporting a wafer and a baffle plate arranged on one side of the support, and the shape of the baffle plate corresponds to that of a flat edge notch of the wafer; the shielding plate can move between a shielding position and a pause position; the shielding position is located on one side of the flat edge of the wafer, and the pause position is far away from the wafer. Controlling the wafer to rotate and move to an electroplating plane; in response to the fact that the wafer rotates to the electroplating position, the shielding plate is moved to be close to the wafer to the shielding position of the wafer; and in response to the fact that the wafer rotates away from the electroplating position, the shielding plate is moved away from the wafer to the pause position of the wafer. According to the wafer electroplating device and the control method thereof, when the wafer rotates to the electroplating position, the shielding plate is controlled to move to the shielding position, then the shielding plate and the wafer are spliced into a whole circle, electroplating uniformity is guaranteed, and when the wafer rotates to other positions, the shielding plate is controlled to be away from the wafer, and interference between the shielding plate and the wafer is prevented.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing, and in particular to an electroplating device in semiconductor wafer processing and a control method thereof. Background Art

[0002] In the current semiconductor electroplating technology, electroplating uniformity is the key to the electroplating process, and electroplating uniformity will be affected by many factors, such as electric field. For wafer-level packaging processes, there are relatively strict standards for the overall height of process products. The height of the electroplating layer near the wafer flat edge notch can easily have a negative impact on product yield and output. In the electroplating process, to ensure the uniformity of electroplating, the stability and uniformity of the working ion transport current should be ensured first. For wafers with flat edges, the wafer flat edge and the surrounding area of ​​the flat edge cause the wafer to differentiate, which leads to the difference in electroplating electric field strength in the wafer circumference and flat edge area. The influence of different electric field strengths leads to a higher thickness of the electroplating layer in the area near the wafer flat edge notch. Uneven electroplating coating ultimately leads to low reliability of semiconductor devices.

[0003] In the prior art, there is no particularly effective method to solve the difference in the electric field edge effect caused by the flat edge of the wafer, which will result in poor uniformity of the wafer flat edge coating. The uneven wafer coating will have many adverse effects on the reliability of the final semiconductor product; how to reduce the adverse effects of the electric field caused by the flat edge of the wafer on the coating needs to be solved. Summary of the invention

[0004] The technical problem to be solved by the present invention is to overcome the defects in the prior art and provide a wafer electroplating device and a control method which can effectively solve the problem of uneven plating on wafer plates.

[0005] The present invention solves the above technical problems through the following technical solutions: A wafer electroplating device includes a bracket for supporting a wafer, characterized in that it also includes:

[0006] A shielding plate provided on one side of the bracket, wherein the shape of the shielding plate corresponds to the shape of the flat edge notch of the wafer;

[0007] The shielding plate can move between its shielding position and the pause position;

[0008] The shielding position is located at one side of the flat edge of the wafer when the wafer is in the electroplating position of its electroplating plane, and the pause position is away from the wafer.

[0009] Preferably, the direction of movement of the shielding plate between its shielding position and the pause position is perpendicular to the direction of the flat edge of the wafer at the electroplating position.

[0010] Preferably, the shielding plate moves horizontally between the pause position and the shielding position, and the plane on which the shielding plate moves horizontally is the electroplating plane, or is located below the electroplating plane.

[0011] Preferably, it also includes a first detection component on the flat edge detection plane for detecting that the wafer rotates to the electroplating position, and the flat edge detection plane is located above the electroplating plane.

[0012] Preferably, the first detection component includes a first laser emitter and a first laser receiver that are arranged opposite to each other, and the first laser emitter and the first laser receiver are arranged on the outer sides of both ends of the flat edge of the electroplating position of the wafer, and the connecting line between the first laser emitter and the first laser receiver is parallel to the flat edge when the wafer is in the electroplating position.

[0013] Preferably, it also includes a signal emitting plane between the flat edge detection plane and the electroplating plane, and a first signal trigger is provided on one side of the signal emitting plane for generating a trigger signal to control the horizontal movement of the baffle when the wafer moves to the signal emitting plane.

[0014] Preferably, it also includes a movement control mechanism for controlling the horizontal movement of the shielding plate, the movement control mechanism includes a control mechanism, a driving mechanism and a transmission mechanism, the control mechanism is used to control the movement of the shielding plate; the control mechanism is connected to the transmission mechanism and the driving mechanism.

[0015] Preferably, it further comprises a second signal trigger, wherein the second signal trigger is used to generate a trigger signal for triggering the movement of the shielding plate when the wafer rotates on the electroplating plane;

[0016] and / or,

[0017] It also includes a second detection component for detecting whether the wafer is rotated to the electroplating position on the electroplating plane.

[0018] Another aspect of the present invention provides a control method for a wafer electroplating device, characterized in that, the control method comprises the following steps:

[0019] Controlling the wafer to rotate and move to the electroplating plane;

[0020] In response to the wafer rotating to the electroplating position, moving the shielding plate close to the wafer to its shielding position;

[0021] In response to the wafer rotating away from the electroplating position, the shielding plate is moved away from the wafer to its pause position.

[0022] Preferably, the step of controlling the wafer to rotate and move to the electroplating plane specifically includes:

[0023] Controlling the wafer to move from top to bottom toward the electroplating plane;

[0024] In response to the wafer reaching the flat edge detection plane above the electroplating plane, acquiring each time when the wafer rotates to the electroplating position;

[0025] In response to the wafer moving to the signal emission plane between the flat edge detection plane and the electroplating plane, a trigger signal is generated to drive the shielding plate to move horizontally.

[0026] Preferably, in response to the wafer rotating to the electroplating position, the shielding plate is moved close to the wafer to its shielding position, specifically,

[0027] Before the wafer rotates to the electroplating position, a trigger signal is generated to drive the shielding plate to move to its shielding position.

[0028] The positive and progressive effect of the present invention is that the wafer electroplating device and the control method thereof of the present invention can control the baffle plate to move to the blocking position when the wafer rotates to the electroplating position, and then be spliced ​​with the wafer into a whole circle to ensure the uniformity of the electroplating. When the wafer is rotated to other positions, the baffle plate is controlled to stay away from the wafer to prevent interference between the two. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a schematic diagram of a conventional wafer;

[0030] Figure 2 is a side view of the electroplating device according to embodiment 1 of the present invention;

[0031] Figure 3 is a schematic diagram of the electroplating device in another direction according to Embodiment 1 of the present invention;

[0032] Figure 4 It is a partial structural schematic diagram of an electroplating device according to Embodiment 1 of the present invention;

[0033] Figure 5 It is a schematic diagram of the framework of the electroplating device of Example 1 of the present invention;

[0034] Figure 6 is a schematic block diagram of another electroplating device according to embodiment 1 of the present invention;

[0035] Figure 7 is a schematic block diagram of another electroplating device according to embodiment 1 of the present invention;

[0036] Figure 8 Schematic diagram of a flow chart of a control method for an electroplating device according to Embodiment 2 of the present invention;

[0037] Fig. 9 This is a schematic diagram of a specific flow chart of step S101 of embodiment 2 of the present invention. DETAILED DESCRIPTION

[0038] The present invention is further described below by way of examples, but the present invention is not limited to the scope of the examples.

[0039] Wafer electroplating is an essential process in the semiconductor chip manufacturing process and packaging process. The wafer is placed in the electroplating chamber, and the wafer is electrochemically reacted. There is electroplating liquid in the chamber; the metal to be electroplated at the bottom of the electroplating chamber serves as the anode of the electroplating, and the wafer serves as the cathode. In existing electroplating equipment, most of the equipment chambers contain multiple anodes, such as Figure 1 As shown, it consists of two different positive electrodes. The central circle represents the first electrode, which is located in the central area of ​​the electroplating chamber; the ring is the second electrode, which is located on the periphery of the electroplating chamber; these two electrodes serve as electroplating anodes. Since the circle and the ring are both symmetrical structures, the electric field formed by the anode is also symmetrical and uniform. Ideally, the wafer to be electroplated should be a perfect circle; such a perfect circle electroplated under a uniform and symmetrical electric field can obtain a relatively ideal and uniform electroplating layer.

[0040] However, as the variety of wafer semiconductors gradually increases, wafers are usually provided with flat edge notches, such as Figure 3 As shown in the figure, the wafer flat edge notch is mainly used for alignment and positioning. The overall electroplating of the area near the wafer flat edge is the most common processing type in production requirements. The electric field edge differentiation caused by the flat edge notch is the main reason for the uneven thickness of this wafer electroplating. In addition, in some requirements, the chip dies on the wafer are unevenly distributed, which will produce irregular non-electroplating areas. There will be many photoresist openings in the area where the chips are distributed on the wafer. These openings can play a conductive role and metal will be deposited during electroplating; while there are no photoresist openings in the area where the chips are not distributed, which cannot conduct electricity and lead to no metal deposition. These two differences lead to different conductive current intensities and electroplating rates in two different areas, which ultimately lead to uneven electroplating thickness in different areas and a point or area with a very high thickness on the wafer surface, and poor reliability of semiconductor devices. In short, the wafer flat edge notch has a great impact on the wafer electroplating effect. If the impact caused by this cannot be properly resolved, the electroplating effect of the flat edge notch wafer will be greatly limited.

[0041] Example 1

[0042] like Figure 2-5As shown, a semiconductor wafer electroplating device is disclosed, including a support 2 for supporting a wafer 1, and a shielding plate 3 located on one side of the support 2. The support 2 can drive the wafer 1 to move up and down, and rotate around the center of a circle. The movement and rotation of the support 2 are based on the control of the control unit. Preferably, a transmission or driving mechanism can also be included to drive the support 2 to move up and down and rotate.

[0043] The shielding plate matches the flat edge 11 of the wafer 1, and the shielding plate 3 is of a size that matches the flat edge notch of the wafer 1, that is, the wafer 1 plus the shielding plate 3 form a complete circular wafer shape. When the wafer 1 is located on its electroplating plane and rotates horizontally around the center of the circle to the electroplating position, as shown in FIG. Figure 3 As shown, the shielding plate 3 can be moved to be adjacent to the flat edge 11, as shown in FIG. Figure 3 As shown, in the top view, the wafer 1 and the shielding plate 3 form a complete circle. At this time, the shielding plate 3 moves to a position where it is spliced ​​with the flat edge, which is the shielding position, and the shielding plate 3 moves to a position away from the wafer 1, which is the pause position.

[0044] The shielding plate 3 can move between the pause position and the shielding position under the drive of the movement control mechanism. The movement of the shielding plate 3 can be horizontal movement, vertical movement, or tilted movement; it can be linear movement or curved movement, as long as it can reach its shielding position at the appropriate time. Preferably, the movement of the shielding plate 3 between the pause position and the shielding position is horizontal movement, more preferably, linear horizontal movement, which is fast and efficient.

[0045] The electroplating device includes a first detection component for detecting a flat edge detection position, which is the state in which the wafer is rotated to its electroplating position. The first detection component is located on the flat edge detection plane 10, above the electroplating plane 30, and includes a group of first laser emitting / receiving components arranged opposite to each other, specifically including a first laser emitter 21 and a first laser receiver 22, and the line between the first laser emitter 21 and the first laser receiver 22 should be located at both ends of the flat edge 11 of the wafer and parallel to the flat edge 11. When the wafer is on the flat edge detection plane 10 and rotated to the point where the flat edge 11 is parallel to the line connecting the first laser emitter / receiver, the first laser receiver 22 can receive the signal from the first laser emitter 21.

[0046] Therefore, as the wafer rotates on the flat edge detection plane 10, multiple specific moments when the wafer rotates to the electroplating position can be obtained according to the first detection component, that is, multiple specific moments of the electroplating position can be determined, which is used to trigger the extension and retraction of the baffle plate, and then control the electroplating at the appropriate time.

[0047] A signal emitting plane 20 is also provided between the flat edge detection plane 10 and the wafer electroplating plane 30. A first signal trigger is also provided on one side of the signal emitting plane 20, which is used to generate a signal to control the shielding plate 3 to extend to the shielding position when the wafer 1 moves up and down to the signal emitting plane 20, so that when the wafer further descends to the electroplating plane 30, the shielding plate 3 moves just to form a complete circle with the flat edge 11, and then electroplating can be carried out.

[0048] Preferably, the first signal trigger is a positioning laser 23, which is located on the signal emission plane 20, outside the flat edge 11 of the wafer electroplating position. The electroplating position is the position where the flat edge on the wafer electroplating plane is perpendicular and relative to the laser emission direction of the positioning laser 23.

[0049] The initial position of wafer 1 is usually above the electroplating plane, but not on the electroplating plane. When wafer 1 is above the electroplating plane, positioning laser 23 cannot detect the light emitted by itself and reflected by the wafer. Only when wafer 1 moves up and down to signal emission plane 20, positioning laser 21 can receive the laser signal emitted by itself, and then send the signal to the moving control mechanism of shielding plate 3, drive shielding plate 3 to move horizontally, and wait until wafer 1 further descends to electroplating plane 30, at which time shielding plate 3 just moves to its shielding position and splices with wafer to form a whole circle, and electroplating can start.

[0050] Preferably, the positioning laser 23 is located outside the flat edge of the wafer 1 , and the direction in which the laser is emitted is perpendicular to the flat edge of the wafer in the electroplating position, and the direction in which the laser is emitted is toward the center of the wafer 1 .

[0051] The shielding plate 3 can be horizontally moved closer to or away from the wafer 1 , and the plane of horizontal movement is the electroplating plane, or is located below the electroplating plane of the wafer 1 .

[0052] like Figure 4 As shown, the electroplating device also includes a mobile control mechanism for controlling the horizontal movement of the shielding plate 3, and the mobile control mechanism includes a control mechanism, a driving mechanism 31 and a transmission mechanism 32, and the control mechanism is connected to the driving mechanism 31 and the transmission mechanism 32. In addition, the control mechanism is also used to connect with the first detection component and the first signal trigger to control the movement of the shielding plate 3; the driving mechanism 31 includes a motor, and the transmission mechanism 32 may include a common mechanism such as a screw nut, which can drive the shielding plate 3 to make a horizontal reciprocating motion in a direction perpendicular to the flat edge of the electroplating position, so that the shielding plate 3 is away from or close to the wafer 1.

[0053] According to the various moments when the wafer rotates to the electroplating position detected at the flat edge detection position, the specific moment when the wafer rotates to each electroplating position can be determined, and then on the electroplating plane, the wafer maintains the original rotation speed, that is, the specific moment of each electroplating position is still determined, then the movement control mechanism of the baffle plate 3 can control the baffle plate 3 to move horizontally back and forth between the blocking position and the pause position according to the specific moment of each electroplating position, thereby ensuring that at the specific moment of each electroplating position, the baffle plate 3 can be extended to the blocking position, forming a whole circle with the wafer, thereby filling the gap caused by the flat edge, balancing the influence of the electric field at this position, and reducing the adverse effects of uneven electric field.

[0054] For example, it can be possible at a time when the wafer is not rotated to the electroplating position, e.g. Figure 3 As shown, when the electroplating position is reached, assuming that the rotation angle of the wafer is 0 degrees at this time, a signal is sent to the mobile control mechanism of the shielding plate 3 at -20 degrees, thereby driving the shielding plate 3 to move horizontally. When the shielding plate 3 moves horizontally to its blocking position, the wafer just rotates to 0 degrees, that is, the electroplating position. Of course, those skilled in the art can also understand that the above-mentioned specific moment can be determined and adjusted according to the moving speed of the shielding plate 3 and the rotation speed of the wafer. When the wafer 1 reaches the electroplating position, the moment when the shielding plate 3 moves horizontally away from the wafer can be controlled according to the moving speed of the shielding plate 3 and the rotation speed of the wafer. Then, during the rotation of the wafer, the approach and distance of the shielding plate 3 are controlled, and uniform electroplating of the wafer is achieved at the corresponding moments of each electroplating position. This method is that the software automatically calculates and controls the horizontal movement of the shielding plate 3.

[0055] like Figure 6 As shown, a second signal trigger for detecting the rotation position of the wafer can also be set at certain angles of wafer rotation, such as a certain position before the electroplating position, and a certain position before or after the electroplating position. The second signal trigger is used to generate a trigger signal for triggering the horizontal movement of the shielding plate 3 when the wafer rotates on the electroplating plane. The second signal trigger can be connected to the movement control mechanism to generate a trigger signal to control the movement of the shielding plate 3. The specific location of the second signal trigger can also be adjusted as needed.

[0056] like Figure 7As shown, as another optional embodiment, the electroplating device may further include a second detection component for detecting whether the wafer 1 is rotated to the electroplating position on the electroplating plane. The second detection component may be arranged corresponding to the upper and lower intervals of the first detection component, and include a second laser emitter and a second laser receiver, which are respectively located at the outer sides of the two ends of the flat edge of the electroplating position of the wafer 1. When the wafer is rotated to the electroplating position, the flat edge 11 is parallel to the line connecting the second laser emitter and the second laser receiver. When the shielding plate 3 has not moved into place, the laser emitted by the second laser emitter can be received by the second laser receiver.

[0057] The second detection component is used to detect whether the wafer 1 is rotated to the electroplating position on the electroplating plane, and can also be used to detect whether the shielding plate 3 is moved to the correct position, because if the shielding plate is always moved to its corresponding shielding position at the electroplating position of the wafer, the second detection component should never detect any signal. However, this effect is limited to when the shielding plate is located on the electroplating plane.

[0058] When the shielding plate is not located on the electroplating plane, but moves horizontally below the electroplating plane, a third detection component can be provided to detect whether the shielding plate 3 is moved into place, specifically, to detect whether the shielding plate 3 moves into place between the shielding position and the pause position, such as Figure 4 The detection device shown is located below the electroplating plane. The third detection component can be a vertical or horizontal laser emitting / receiving device, or other magnetic or capacitive coupling detection devices. The third detection component is used to detect whether the shielding plate is moved into place, thereby better controlling the movement of the shielding plate 3.

[0059] Example 2

[0060] like Figure 8 As shown, a control method for a wafer electroplating device is disclosed. The wafer electroplating device, as shown in embodiment 1, comprises:

[0061] S101, controlling the wafer to rotate and move to an electroplating plane;

[0062] S102, in response to the wafer rotating to the electroplating position, moving the shielding plate close to the wafer to its shielding position;

[0063] S103, in response to the wafer rotating away from the electroplating position, moving the shielding plate away from the wafer to its pause position.

[0064] The step S101 controls the wafer to rotate and move to the electroplating plane, which specifically includes moving the wafer from top to bottom to the electroplating plane while the wafer rotates. The bracket 2 realizes the up and down movement and horizontal rotation of the wafer.

[0065] The step S101 specifically includes: Fig. 9 As shown,

[0066] Step S1011, controlling the wafer to move from top to bottom toward the electroplating plane;

[0067] Step S1012, in response to the wafer reaching the flat edge detection plane above the electroplating plane, obtaining each moment when the wafer rotates to the electroplating position; wherein each moment of the electroplating position is obtained by the first detection component.

[0068] Step S1013, in response to the wafer moving to the signal transmission plane between the flat edge detection plane and the electroplating plane, a trigger signal is generated. The trigger signal is generated by a first signal trigger and is used to drive the horizontal movement of the shielding plate.

[0069] In the control method of the wafer electroplating device, the rotation speed of the wafer and the current position of the wafer can be obtained by obtaining the various moments when the wafer rotates to the electroplating position on the flat edge detection plane, and then the horizontal movement of the shielding plate can be controlled to match the movement of the shielding plate with the rotation speed of the wafer. When the wafer rotates to the electroplating position, the shielding plate just moves to its shielding position, and the shielding plate and the wafer are spliced ​​into a full circle, thereby ensuring the uniformity of the electroplating. When the wafer rotates away from the electroplating position, the shielding plate can be kept away from the wafer to prevent interference between the two.

[0070] In the step S102, in response to the wafer rotating to the electroplating position, the shielding plate is moved close to the wafer to its shielding position; specifically,

[0071] Before the wafer rotates to the electroplating position, a trigger signal is generated to drive the shielding plate to move to its shielding position;

[0072] Specifically, this step is to generate a trigger signal by software calculation, or to generate the trigger signal by a second signal trigger that detects wafer rotation.

[0073] The horizontal movement of the shielding plate 3 is controlled by the mobile control mechanism. The second signal trigger is connected to the mobile control mechanism, and the second signal trigger is used to detect the rotation position of the wafer when it rotates on the electroplating plane, and then generate a trigger signal at a suitable position to control the shielding plate 3 to move to its shielding position, so that when the wafer rotates to the electroplating position, the shielding plate 3 is exactly located at its shielding position.

[0074] At the same time, the generation of the trigger signal can also be coordinated by a second detection component, which can be the same as the first detection component, except that it can be set on the electroplating plane to detect whether the wafer is rotated to its electroplating position. Specifically, the second detection component is used to obtain the various moments when the wafer rotates to the electroplating position on the electroplating plane, and then generate a corresponding trigger signal or control signal to cooperate with controlling the horizontal movement of the shielding plate 3.

[0075] The control method of the wafer electroplating device can control the horizontal movement of the baffle plate while controlling the wafer to rotate for electroplating. When the wafer rotates to the electroplating position, the baffle plate can just move to its blocking position to form a full circle with the wafer to ensure the uniformity of the electroplating. When the wafer rotates to other positions, the baffle plate can move away from the wafer to prevent interference between the two.

[0076] Although the specific embodiments of the present invention are described above, it should be understood by those skilled in the art that this is only for illustration and the protection scope of the present invention is defined by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present invention, but these changes and modifications all fall within the protection scope of the present invention.

Claims

1. A wafer electroplating device, comprising a support (2) for supporting a wafer (1), characterized in that: Also includes, A shielding plate (3) is arranged on one side of the support (2), and the shape of the shielding plate (3) corresponds to the shape of the flat edge notch of the wafer (1); The shielding plate (3) can move between its shielding position and a pause position; The shielding position is located at one side of the flat edge of the wafer when the wafer is in the electroplating position of its electroplating plane, and the pause position is away from the wafer.

2. The wafer electroplating device according to claim 1, characterized in that: The direction of movement of the shielding plate (3) between its shielding position and the pause position is perpendicular to the direction of the flat edge of the wafer (1) when it is in the electroplating position.

3. The wafer electroplating device according to claim 1, characterized in that: The shielding plate (3) moves horizontally between the pause position and the shielding position, and the plane on which the shielding plate (3) moves horizontally is the electroplating plane, or is located below the electroplating plane.

4. The wafer electroplating device according to claim 1, characterized in that: It also includes a first detection component on a flat edge detection plane (10) for detecting the rotation of the wafer to the electroplating position, wherein the flat edge detection plane (10) is located above the electroplating plane.

5. The wafer electroplating device according to claim 4, characterized in that: The first detection component comprises a first laser emitter (21) and a first laser receiver (22) which are arranged opposite to each other. The first laser emitter (21) and the first laser receiver (22) are arranged outside two ends of a flat edge of the electroplating position of the wafer. The connection line between the first laser emitter (21) and the first laser receiver (22) is parallel to the flat edge of the wafer when it is at the electroplating position.

6. The wafer electroplating device according to claim 1, characterized in that: It also includes a signal emitting plane between the flat edge detection plane and the electroplating plane. A first signal trigger is provided on one side of the signal emitting plane for generating a trigger signal to control the horizontal movement of the shielding plate when the wafer moves to the signal emitting plane.

7. The wafer electroplating device according to claim 1, characterized in that: It also comprises a movement control mechanism for controlling the movement of the shielding plate (3), the movement control mechanism comprising a control mechanism, a driving mechanism (31) and a transmission mechanism (32), the control mechanism being used to control the movement of the shielding plate; the control mechanism is connected to the transmission mechanism and the driving mechanism.

8. The wafer electroplating device according to claim 1, characterized in that: It also includes a second signal trigger, which is used to generate a trigger signal for triggering the movement of the shielding plate (3) when the wafer rotates on the electroplating plane; and / or, It also includes a second detection component for detecting whether the wafer is rotated to the electroplating position on the electroplating plane.

9. A control method for a wafer electroplating device, characterized in that: The wafer electroplating device is as described in any one of claims 1 to 8, and the control method comprises the following steps: Controlling the wafer to rotate and move to the electroplating plane; In response to the wafer rotating to the electroplating position, moving the shielding plate close to the wafer to its shielding position; In response to the wafer rotating away from the electroplating position, the shielding plate is moved away from the wafer to its pause position.

10. The control method of the wafer electroplating device according to claim 9, characterized in that: The controlling of the wafer to rotate and move to the electroplating plane specifically includes: Controlling the wafer to move from top to bottom toward the electroplating plane; In response to the wafer reaching the flat edge detection plane above the electroplating plane, acquiring each time when the wafer rotates to the electroplating position; In response to the wafer moving to the signal emission plane between the flat edge detection plane and the electroplating plane, a trigger signal is generated to drive the shielding plate to move horizontally.

11. The control method of the wafer electroplating device according to claim 8, characterized in that: In response to the wafer rotating to the electroplating position, the shielding plate is moved close to the wafer to its shielding position, specifically, Before the wafer rotates to the electroplating position, a trigger signal is generated to drive the shielding plate to move to its shielding position.

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