Material transfer method of silicon carbide epitaxial growth equipment

Abstract

The invention provides a material transfer method for silicon carbide epitaxial growth equipment, which comprises the following steps of: recovering a substrate slice temporary storage chamber to normal pressure before loading a substrate slice into the substrate slice temporary storage chamber, and adjusting the pressure of the substrate slice temporary storage chamber to growth pressure before transferring the substrate slice into a transmission chamber. Before the epitaxial wafer is transferred into the epitaxial wafer temporary storage chamber, the pressure in the epitaxial wafer temporary storage chamber is adjusted to growth pressure, and before the epitaxial wafer is taken out of the epitaxial wafer temporary storage chamber, the pressure in the epitaxial wafer temporary storage chamber is recovered to normal pressure. According to the material transfer method of the silicon carbide epitaxial growth equipment, only the pressure of the substrate slice temporary storage chamber and the pressure of the epitaxial slice temporary storage chamber need to be adjusted when the substrate slice or the epitaxial slice is transferred, the space of the substrate slice temporary storage chamber and the space of the epitaxial slice temporary storage chamber are small, pressure adjustment can be rapidly carried out, and the growth time is saved. And the growth chamber always keeps the production pressure, and pressure adjustment is not needed, so that the cleanliness of the growth chamber can be better guaranteed.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a material transfer method for silicon carbide epitaxial growth equipment. Background Art

[0002] Silicon carbide epitaxial growth generally needs to be carried out in a low-pressure environment (50-150mbar) in the growth chamber. After the growth is completed, the silicon carbide epitaxial wafer needs to be transferred out. Before transferring out, the pressure of the growth chamber needs to be restored to normal pressure. The pressure of the growth chamber needs to fluctuate back and forth between normal pressure and low pressure. The growth chamber environment is relatively complex and the cavity is large. The pressure needs to change slowly, which is time-consuming. In addition, by-products will be produced during the growth of silicon carbide and attached to the growth chamber. Frequent changes in pressure may cause the attachments to fall off and affect the chamber environment. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a material transfer method for a silicon carbide epitaxial growth device, which aims to solve the problem that the pressure of the growth chamber for silicon carbide growth in the related art needs to be repeatedly switched between normal pressure and low pressure, which wastes time, and the frequent pressure changes may cause the attachments on the inner wall of the growth chamber to fall off and affect the chamber environment.

[0004] The present invention provides a material transfer method for a silicon carbide epitaxial growth device, the silicon carbide epitaxial growth device comprises a cavity, a valve group and a pressure control component, the cavity is provided with a growth chamber, a transmission chamber, a substrate sheet temporary storage chamber and an epitaxial wafer temporary storage chamber, the growth chamber, the substrate sheet temporary storage chamber and the epitaxial wafer temporary storage chamber are all connected with the transmission chamber, and a material transfer mechanism is provided in the transmission chamber, the valve group is used to connect or cut off the growth chamber, the substrate sheet temporary storage chamber and / or the epitaxial wafer temporary storage chamber with the transmission chamber, the pressure control component is used to adjust the pressure in the growth chamber, the transmission chamber, the substrate sheet temporary storage chamber and the epitaxial wafer temporary storage chamber, and the material transfer method comprises:

[0005] Cutting off the communication between the growth chamber, the substrate temporary storage chamber and the epitaxial wafer temporary storage chamber and the transfer chamber through the valve group, and adjusting the pressure in the growth chamber and the transfer chamber to the production pressure through the pressure control component;

[0006] The pressure in the substrate temporary storage chamber is adjusted to normal pressure by the pressure control component, and then the substrate temporary storage chamber is opened, and a substrate is placed in the substrate temporary storage chamber, and then the substrate temporary storage chamber is closed;

[0007] The pressure in the substrate temporary storage chamber is adjusted to the production pressure by the pressure control component, and then the substrate temporary storage chamber and the transfer chamber are connected by the valve group, and the substrate in the substrate temporary storage chamber is transferred to the transfer chamber by the material transfer mechanism, and then the connection between the substrate temporary storage chamber and the transfer chamber is cut off by the valve group;

[0008] The transfer chamber and the growth chamber are connected by the valve group, and then the substrate sheet in the transfer chamber is transferred to the growth chamber by the material transfer mechanism, and then the connection between the growth chamber and the transfer chamber is cut off by the valve group;

[0009] The transfer chamber and the growth chamber are connected by the valve group, and then the epitaxial wafer grown in the growth chamber is transferred to the transfer chamber by the material transfer mechanism, and then the connection between the growth chamber and the transfer chamber is cut off by the valve group;

[0010] The pressure in the epitaxial wafer temporary storage chamber is adjusted to the production pressure by the pressure control component, and then the epitaxial wafer temporary storage chamber and the transfer chamber are connected by the valve group, and the epitaxial wafer in the transfer chamber is transferred to the epitaxial wafer temporary storage chamber by the material transfer mechanism, and then the connection between the epitaxial wafer temporary storage chamber and the transfer chamber is cut off by the valve group;

[0011] The pressure in the epitaxial wafer temporary storage chamber is adjusted to normal pressure through the pressure control component, and then the epitaxial wafer temporary storage chamber is opened and the epitaxial wafer is taken out.

[0012] According to the material transfer method of silicon carbide epitaxial growth equipment provided by the present invention, the production pressure is any value between 50 mbar and 150 mbar.

[0013] According to the material transfer method of the silicon carbide epitaxial growth equipment provided by the present invention, the valve group includes:

[0014] A first switch valve is disposed between the substrate temporary storage chamber and the transfer chamber;

[0015] a second switch valve, disposed between the transmission chamber and the growth chamber;

[0016] The third switch valve is arranged between the transmission chamber and the epitaxial wafer temporary storage chamber.

[0017] According to the material transfer method of silicon carbide epitaxial growth equipment provided by the present invention, the first switch valve, the second switch valve and the third switch valve are all gate valves.

[0018] According to the material transfer method of the silicon carbide epitaxial growth equipment provided by the present invention, the pressure control component comprises:

[0019] A first pressure controller, used for adjusting the pressure in the substrate temporary storage chamber;

[0020] A second pressure controller, used to adjust the pressure in the epitaxial wafer temporary storage chamber;

[0021] A third pressure controller, wherein the number of the third pressure controller is one and the third pressure controller is used to adjust the pressure in the growth chamber and the transfer chamber, or the number of the third pressure controller is two and the two third pressure controllers are respectively used to control the pressure in the corresponding growth chamber or the transfer chamber.

[0022] According to the material transfer method of the silicon carbide epitaxial growth equipment provided by the present invention, the pressure control range of the first pressure controller, the second pressure controller and the third pressure controller is at least 50 mbar to normal pressure.

[0023] According to the material transfer method of silicon carbide epitaxial growth equipment provided by the present invention, the material transfer mechanism includes a robot.

[0024] The present invention adopts the above technical solution, which has the following advantages:

[0025] The present invention provides a material transfer method for a silicon carbide epitaxial growth device, wherein the silicon carbide epitaxial growth device comprises a chamber, a valve group and a pressure control component. A growth chamber, a transmission chamber, a substrate sheet temporary storage chamber and an epitaxial wafer temporary storage chamber are arranged in the chamber, and the growth chamber, the substrate sheet temporary storage chamber and the epitaxial wafer temporary storage chamber are all connected to the transmission chamber, and a material transfer mechanism is arranged in the transmission chamber. The valve group is used to connect or cut off the growth chamber, the substrate sheet temporary storage chamber and / or the epitaxial wafer temporary storage chamber with the transmission chamber. The pressure control component is used to adjust the pressure in the growth chamber, the transmission chamber, the substrate sheet temporary storage chamber and the epitaxial wafer temporary storage chamber. The material transfer method comprises: cutting off the connection between the growth chamber, the substrate sheet temporary storage chamber and the epitaxial wafer temporary storage chamber and the transmission chamber by the valve group, adjusting the pressure in the growth chamber and the transmission chamber to the production pressure by the pressure control component, and adjusting the pressure in the substrate sheet temporary storage chamber to normal pressure by the pressure control component, and then opening the substrate sheet temporary storage chamber, and placing the substrate sheet in the substrate sheet temporary storage chamber. The pressure in the substrate storage chamber is adjusted to the production pressure by the pressure control component, and then the substrate storage chamber and the transmission chamber are connected by the valve group, and the substrate in the substrate storage chamber is transferred to the transmission chamber by the material transfer mechanism, and then the connection between the substrate storage chamber and the transmission chamber is cut off by the valve group. The transmission chamber and the growth chamber are connected by the valve group, and then the substrate in the transmission chamber is transferred to the growth chamber by the material transfer mechanism, and then the connection between the growth chamber and the transmission chamber is cut off by the valve group. The transmission chamber and the growth chamber are connected by the valve group, and then the epitaxial wafer grown in the growth chamber is transferred to the transmission chamber by the material transfer mechanism, and then the connection between the growth chamber and the transmission chamber is cut off by the valve group. The pressure in the epitaxial wafer temporary storage chamber is adjusted to the production pressure by the pressure control component, and then the epitaxial wafer temporary storage chamber and the transmission chamber are connected by the valve group, and the epitaxial wafer in the transmission chamber is transferred to the epitaxial wafer temporary storage chamber by the material transfer mechanism, and then the connection between the epitaxial wafer temporary storage chamber and the transmission chamber is cut off by the valve group. The pressure in the epitaxial wafer temporary storage chamber is adjusted to normal pressure through the pressure control component, and then the epitaxial wafer temporary storage chamber is opened and the epitaxial wafer is taken out. The material transfer method of the silicon carbide epitaxial growth equipment provided by the present invention only needs to adjust the pressure of the substrate sheet temporary storage chamber and the epitaxial wafer temporary storage chamber when transferring the substrate sheet or epitaxial wafer. Since the space of the substrate sheet temporary storage chamber and the epitaxial wafer temporary storage chamber is small, the pressure can be adjusted quickly to save growth time. The growth chamber always maintains the production pressure, and no pressure adjustment is required, which can better ensure the cleanliness of the growth chamber.

[0026] Furthermore, in the pressure control method of the silicon carbide epitaxial growth equipment provided by the present invention, since it is implemented based on the above-mentioned silicon carbide epitaxial growth equipment, it has the same advantages as described above. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0028] Figure 1 It is a flow chart of a material transfer method of a silicon carbide epitaxial growth device provided by one embodiment of the present invention;

[0029] Figure 2 It is a schematic structural diagram of a silicon carbide epitaxial growth device provided in one embodiment of the present invention.

[0030] Reference numerals:

[0031] 110: growth chamber; 120: transfer chamber; 130: substrate wafer temporary storage chamber; 140: epitaxial wafer temporary storage chamber; 210: first switch valve; 220: second switch valve; 230: third switch valve; 310: first pressure controller; 320: second pressure controller. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0034] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is more than two, unless otherwise clearly and specifically defined.

[0035] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0036] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0037] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0038] The material transfer method of the silicon carbide epitaxial growth equipment provided by the present invention first cuts off the connection between the growth chamber, the substrate sheet temporary storage chamber and the epitaxial sheet temporary storage chamber and the transmission chamber through a valve group, and adjusts the pressure in the growth chamber and the transmission chamber to the production pressure through a pressure control component, and adjusts the pressure in the substrate sheet temporary storage chamber to normal pressure through a pressure control component, then opens the substrate sheet temporary storage chamber, and puts the substrate sheet into the substrate sheet temporary storage chamber. The pressure in the substrate sheet temporary storage chamber is adjusted to the production pressure through a pressure control component, and then the substrate sheet temporary storage chamber and the transmission chamber are connected through a valve group, and the substrate sheet in the substrate sheet temporary storage chamber is transferred to the transmission chamber through a material transfer mechanism, and then the connection between the substrate sheet temporary storage chamber and the transmission chamber is cut off through a valve group. The transmission chamber and the growth chamber are connected through a valve group, and then the substrate sheet in the transmission chamber is transferred to the growth chamber through a material transfer mechanism, and then the connection between the growth chamber and the transmission chamber is cut off through a valve group. The transmission chamber and the growth chamber are connected by a valve group, and then the epitaxial wafer grown in the growth chamber is transferred to the transmission chamber by a material transfer mechanism, and then the connection between the growth chamber and the transmission chamber is cut off by the valve group. The pressure in the epitaxial wafer temporary storage chamber is adjusted to the production pressure by a pressure control component, and then the epitaxial wafer temporary storage chamber and the transmission chamber are connected by a valve group, and the epitaxial wafer in the transmission chamber is transferred to the epitaxial wafer temporary storage chamber by a material transfer mechanism, and then the connection between the epitaxial wafer temporary storage chamber and the transmission chamber is cut off by a valve group. The pressure in the epitaxial wafer temporary storage chamber is adjusted to normal pressure by a pressure control component, and then the epitaxial wafer temporary storage chamber is opened and the epitaxial wafer is taken out. The material transfer method of the silicon carbide epitaxial growth equipment provided by the present invention only needs to adjust the pressure of the substrate wafer temporary storage chamber and the epitaxial wafer temporary storage chamber when transferring the substrate wafer or epitaxial wafer. Since the space of the substrate wafer temporary storage chamber and the epitaxial wafer temporary storage chamber is small, the pressure can be adjusted quickly to save growth time. The growth chamber always maintains production pressure without the need for pressure adjustment, which can better ensure the cleanliness of the growth chamber.

[0039] Combine the following Figure 1 and Figure 2 The material transfer method of the silicon carbide epitaxial growth equipment of the present invention is described.

[0040] An embodiment of the present invention provides a material transfer method for a silicon carbide epitaxial growth device, wherein the silicon carbide epitaxial growth device includes a chamber, a valve group, and a pressure control component. A growth chamber 110, a transmission chamber 120, a substrate sheet temporary storage chamber 130, and an epitaxial wafer temporary storage chamber 140 are arranged in the chamber, and the growth chamber 110, the substrate sheet temporary storage chamber 130, and the epitaxial wafer temporary storage chamber 140 are all connected to the transmission chamber 120. The valve group is used to connect or disconnect the growth chamber 110, the substrate sheet temporary storage chamber 130, and / or the epitaxial wafer temporary storage chamber 140 with the transmission chamber 120. The pressure control component is used to adjust the pressure in the growth chamber 110, the transmission chamber 120, the substrate sheet temporary storage chamber 130, and the epitaxial wafer temporary storage chamber 140.

[0041] The material transfer method includes the following steps:

[0042] Step S100, the connection between the growth chamber 110, the substrate storage chamber 130 and the epitaxial wafer storage chamber 140 and the transfer chamber 120 is cut off by a valve group, and the pressure in the growth chamber 110 and the transfer chamber 120 is adjusted to the production pressure by a pressure control component.

[0043] Specifically, this step mainly involves the preparation work before silicon carbide growth. First, the valve group is used to cut off the connection between the transfer chamber 120 and the substrate wafer temporary storage chamber 130 and the epitaxial wafer temporary storage chamber 140, and then the valve group is used to keep the transfer chamber 120 and the growth chamber 110 connected, and then the pressure in the transfer chamber 120 and the growth chamber 110 is adjusted to the production pressure together through the pressure control component, or the connection between the transfer chamber 120 and the growth chamber 110 is cut off through the valve group, and then the pressure control component is used to adjust the transfer chamber 120 and the growth chamber 110 to the production pressure respectively.

[0044] Step S200 , adjusting the pressure in the substrate temporary storage chamber 130 to normal pressure through the pressure control component, then opening the substrate temporary storage chamber 130 , placing the substrate into the substrate temporary storage chamber 130 , and then closing the substrate temporary storage chamber 130 .

[0045] Specifically, before opening the substrate temporary storage chamber 130, firstly, the pressure in the substrate temporary storage chamber 130 is adjusted to normal pressure by using the pressure control component to make it consistent with the external pressure, and then the substrate temporary storage chamber 130 is opened, and then the substrate is placed in the substrate temporary storage chamber 130. Then, the substrate temporary storage chamber 130 is closed to make the substrate temporary storage chamber 130 airtight.

[0046] Step S300, adjusting the pressure in the substrate temporary storage chamber 130 to the production pressure through the pressure control component, then connecting the substrate temporary storage chamber 130 and the transfer chamber 120 through the valve group, and transferring the substrate in the substrate temporary storage chamber 130 to the transfer chamber 120 through the material transfer mechanism, and then cutting off the connection between the substrate temporary storage chamber 130 and the transfer chamber 120 through the valve group.

[0047] Specifically, this step mainly involves the transfer of the substrate, specifically, transferring it from the substrate temporary storage chamber 130 to the transfer chamber 120. First, the pressure of the substrate temporary storage chamber 130 is adjusted to the growth pressure by using the pressure control component to ensure that the pressure of the substrate temporary storage chamber 130 and the transfer chamber 120 are consistent before the substrate temporary storage chamber 130 is connected to the transfer chamber 120.

[0048] Then, the substrate sheet temporary storage chamber 130 and the transfer chamber 120 are connected through the valve group, and the substrate sheet in the substrate sheet temporary storage chamber 130 is transferred to the transfer chamber 120 by the material transfer mechanism, and then the substrate sheet temporary storage chamber 130 and the transfer chamber 120 are cut off by the valve group to keep the transfer chamber 120 airtight.

[0049] Step S400, connecting the transfer chamber 120 and the growth chamber 110 through the valve group, then transferring the substrate sheet in the transfer chamber 120 to the growth chamber 110 through the material transfer mechanism, and then cutting off the connection between the growth chamber 110 and the transfer chamber 120 through the valve group.

[0050] Specifically, this step mainly involves transferring the substrate sheet, specifically transferring it from the transfer chamber 120 to the growth chamber 110 .

[0051] First, the transfer chamber 120 and the growth chamber 110 are connected by a valve group, and the substrate sheet in the transfer chamber 120 is transferred to the growth chamber 110 by using a material transfer mechanism. Then, the transfer chamber 120 and the growth chamber 110 are cut off by the valve group, so that the transfer chamber 120 and the growth chamber 110 are each kept sealed.

[0052] Step S500, connecting the transfer chamber 120 and the growth chamber 110 through the valve group, then transferring the epitaxial wafer grown in the growth chamber 110 to the transfer chamber 120 through the material transfer mechanism, and then cutting off the connection between the growth chamber 110 and the transfer chamber 120 through the valve group.

[0053] Specifically, this step mainly involves transferring the grown epitaxial wafer, specifically transferring it from the growth chamber 110 to the transfer chamber 120 .

[0054] First, the transfer chamber 120 and the growth chamber 110 are connected by a valve group, and the epitaxial wafer in the growth chamber 110 is transferred to the transfer chamber 120 by using a material transfer mechanism. Then, the transfer chamber 120 and the growth chamber 110 are cut off by the valve group, so that the transfer chamber 120 and the growth chamber 110 are each kept closed.

[0055] Step S600, adjusting the pressure in the epitaxial wafer temporary storage chamber 140 to the production pressure through the pressure control component, then connecting the epitaxial wafer temporary storage chamber 140 and the transfer chamber 120 through the valve group, and transferring the epitaxial wafer in the transfer chamber 120 to the epitaxial wafer temporary storage chamber 140 through the material transfer mechanism, and then cutting off the connection between the epitaxial wafer temporary storage chamber 140 and the transfer chamber 120 through the valve group.

[0056] Specifically, this step mainly involves transferring the epitaxial wafer, specifically transferring it from the transfer chamber 120 to the epitaxial wafer temporary storage chamber 140 .

[0057] First, the pressure in the epitaxial wafer temporary storage chamber 140 is adjusted to the production pressure by using the pressure regulating assembly to ensure that the pressure in the epitaxial wafer temporary storage chamber 140 is consistent with the pressure in the transmission chamber 120 before the transmission chamber 120 and the epitaxial wafer temporary storage chamber 140 are connected. Then, the epitaxial wafer temporary storage chamber 140 and the transmission chamber 120 are connected by using a valve group, and then the epitaxial wafer in the transmission chamber 120 is transferred to the epitaxial wafer temporary storage chamber 140 by using the material transfer mechanism.

[0058] Step S700: adjusting the pressure in the epitaxial wafer temporary storage chamber 140 to normal pressure through the pressure control component, then opening the epitaxial wafer temporary storage chamber 140 and taking out the epitaxial wafer.

[0059] Specifically, this step mainly involves taking out the epitaxial wafer. First, the pressure of the epitaxial wafer temporary storage chamber 140 is adjusted to normal pressure by using a pressure control component, so that the pressure in the epitaxial wafer temporary storage chamber 140 is consistent with the external environmental pressure. Then, the epitaxial wafer temporary storage chamber 140 is opened and the epitaxial wafer is taken out.

[0060] During the silicon carbide growth process, the silicon carbide epitaxial growth device provided by the present invention only needs to adjust the pressure of the substrate temporary storage chamber 130 and the epitaxial wafer temporary storage chamber 140. Since the space of the substrate temporary storage chamber 130 and the epitaxial wafer temporary storage chamber 140 is small, the pressure can be adjusted quickly to save growth time. The growth chamber 110 always maintains the production pressure without the need for pressure adjustment, which can better ensure the cleanliness of the growth chamber 110.

[0061] In some embodiments, the production pressure is any value between 50 mbar and 150 mbar, for example, 60 mbar, 70 mbar, 80 mbar, 90 mbar, 100 mbar, 110 mbar, 120 mbar, 130 mbar, or 140 mbar.

[0062] In some embodiments, the valve group includes a first switch valve 210 , a second switch valve 220 , and a third switch valve 230 , and the first switch valve 210 , the second switch valve 220 , and the third switch valve 230 may all be gate valves.

[0063] The first switch valve 210 is disposed between the substrate temporary storage chamber 130 and the transfer chamber 120, and is used to control the connection or disconnection between the substrate temporary storage chamber 130 and the transfer chamber 120. The second switch valve 220 is disposed between the transfer chamber 120 and the growth chamber 110, and is used to control the connection or disconnection between the transfer chamber 120 and the growth chamber 110. The third switch valve 230 is disposed between the transfer chamber 120 and the epitaxial wafer temporary storage chamber 140, and is used to control the connection or disconnection between the transfer chamber 120 and the epitaxial wafer temporary storage chamber 140.

[0064] In some embodiments, the material transfer mechanism may be a manipulator. The manipulator may transfer the substrate in the substrate temporary storage chamber 130 to the transfer chamber 120 when the first switch valve 210 is opened, may transfer the substrate in the transfer chamber 120 to the growth chamber 110 when the second switch valve 220 is opened, may transfer the epitaxial wafer grown in the growth chamber 110 to the transfer chamber 120 when the second switch valve 220 is opened, and may transfer the epitaxial wafer in the transfer chamber 120 to the epitaxial wafer temporary storage chamber 140 when the third switch valve 230 is opened.

[0065] In some embodiments, the pressure control assembly may include a first pressure controller 310 , a second pressure controller 320 , and a third pressure controller.

[0066] The first pressure controller 310 is used to adjust the pressure in the substrate temporary storage chamber 130. The second pressure controller 320 is used to adjust the pressure in the epitaxial wafer temporary storage chamber 140. The number of the third pressure controllers can be one, and the third pressure controller is used to adjust the pressure in the growth chamber 110 and the transfer chamber 120; or the number of the third pressure controllers can be two, and the two third pressure controllers are used to control the pressure in the corresponding growth chamber 110 or the transfer chamber 120 respectively.

[0067] The pressure control range of the first pressure controller 310, the second pressure controller 320 and the third pressure controller is at least 50 mbar to normal pressure.

[0068] Since the growth pressure of the silicon carbide epitaxial growth process is between 50mbar and 150mbar, the minimum control pressure of the first pressure controller 310, the second pressure controller 320 and the third pressure controller can reach at least 50mbar, and the pressure of the external environment is normal pressure. Therefore, the maximum control pressure of the first pressure controller 310, the second pressure controller 320 and the third pressure controller can reach at least normal pressure.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application, and they should all be included in the scope of the claims and specification of the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

Claims

1. A material transfer method for a silicon carbide epitaxial growth device, characterized in that: The silicon carbide epitaxial growth equipment comprises a chamber, a valve group and a pressure control component. A growth chamber (110), a transmission chamber (120), a substrate temporary storage chamber (130) and an epitaxial wafer temporary storage chamber (140) are arranged in the chamber. The growth chamber (110), the substrate temporary storage chamber (130) and the epitaxial wafer temporary storage chamber (140) are all connected to the transmission chamber (120), and a material transfer mechanism is arranged in the transmission chamber (120). The valve group is used to connect or disconnect the growth chamber (110), the substrate temporary storage chamber (130) and / or the epitaxial wafer temporary storage chamber (140) with the transmission chamber (120). The pressure control component is used to adjust the pressure in the growth chamber (110), the transmission chamber (120), the substrate temporary storage chamber (130) and the epitaxial wafer temporary storage chamber (140). The material transfer method comprises: The valve group is used to cut off the communication between the growth chamber (110), the substrate temporary storage chamber (130) and the epitaxial wafer temporary storage chamber (140) and the transfer chamber (120), and the pressure in the growth chamber (110) and the transfer chamber (120) is adjusted to the production pressure through the pressure control component; The pressure in the substrate sheet temporary storage chamber (130) is adjusted to normal pressure by the pressure control component, and then the substrate sheet temporary storage chamber (130) is opened, and a substrate sheet is placed in the substrate sheet temporary storage chamber (130), and then the substrate sheet temporary storage chamber (130) is closed; The pressure in the substrate temporary storage chamber (130) is adjusted to the production pressure by the pressure control component, and then the substrate temporary storage chamber (130) and the transfer chamber (120) are connected by the valve group, and the substrate in the substrate temporary storage chamber (130) is transferred to the transfer chamber (120) by the material transfer mechanism, and then the connection between the substrate temporary storage chamber (130) and the transfer chamber (120) is cut off by the valve group; The transfer chamber (120) and the growth chamber (110) are connected via the valve group, and then the substrate sheet in the transfer chamber (120) is transferred to the growth chamber (110) via the material transfer mechanism, and then the connection between the growth chamber (110) and the transfer chamber (120) is cut off via the valve group; The transfer chamber (120) and the growth chamber (110) are connected by the valve group, and then the epitaxial wafer grown in the growth chamber (110) is transferred to the transfer chamber (120) by the material transfer mechanism, and then the connection between the growth chamber (110) and the transfer chamber (120) is cut off by the valve group; The pressure in the epitaxial wafer temporary storage chamber (140) is adjusted to the production pressure through the pressure control component, and then the epitaxial wafer temporary storage chamber (140) and the transfer chamber (120) are connected through the valve group, and the epitaxial wafer in the transfer chamber (120) is transferred to the epitaxial wafer temporary storage chamber (140) through the material transfer mechanism, and then the communication between the epitaxial wafer temporary storage chamber (140) and the transfer chamber (120) is cut off through the valve group; The pressure in the epitaxial wafer temporary storage chamber (140) is adjusted to normal pressure through the pressure control component, and then the epitaxial wafer temporary storage chamber (140) is opened and the epitaxial wafer is taken out.

2. The material transfer method of silicon carbide epitaxial growth equipment according to claim 1, characterized in that: The production pressure is any value between 50 mbar and 150 mbar.

3. The material transfer method of silicon carbide epitaxial growth equipment according to claim 1, characterized in that: The valve group comprises: A first switch valve (210) is arranged between the substrate temporary storage chamber (130) and the transmission chamber (120); A second switch valve (220) is disposed between the transmission chamber (120) and the growth chamber (110); The third switch valve (230) is arranged between the transmission chamber (120) and the epitaxial wafer temporary storage chamber (140).

4. The material transfer method of silicon carbide epitaxial growth equipment according to claim 3, characterized in that: The first switch valve (210), the second switch valve (220) and the third switch valve (230) are all gate valves.

5. The material transfer method of silicon carbide epitaxial growth equipment according to claim 1, characterized in that: The pressure control assembly comprises: A first pressure controller (310) for adjusting the pressure in the substrate temporary storage chamber (130); A second pressure controller (320) for adjusting the pressure in the epitaxial wafer temporary storage chamber (140); A third pressure controller, wherein there is one third pressure controller and the third pressure controller is used to adjust the pressure in the growth chamber (110) and the transfer chamber (120); or there are two third pressure controllers and the two third pressure controllers are used to control the pressure in the corresponding growth chamber (110) or the transfer chamber (120), respectively.

6. The material transfer method of silicon carbide epitaxial growth equipment according to claim 5, characterized in that: The pressure control range of the first pressure controller (310), the second pressure controller (320) and the third pressure controller is at least 50 mbar to normal pressure.

7. The material transfer method of silicon carbide epitaxial growth equipment according to claim 1, characterized in that: The material transfer mechanism includes a manipulator.

Images