High-current diode with double-layer anode structure for radiation field focusing and use method of high-current diode

Abstract

The invention discloses a double-layer anode structure high-current diode for radiation field focusing and a use method. The double-layer anode structure high-current diode comprises an annular cathode plate, an outer-layer anode annular plate, an inner-layer anode annular plate and an anode target surface, the anode target surfaces are arranged on the side surface of the inner-layer anode annular plate side by side, the annular cathode plate sleeves the outer sides of the inner-layer anode annular plate and the anode target surfaces, and a first cavity is formed among the annular cathode plate, the inner-layer anode annular plate and the anode target surfaces; the outer-layer anode annular plate sleeves the outer side of the annular cathode plate, and a second cavity is formed between the outer-layer anode annular plate and the annular cathode plate; and the first cavity and the second cavity are communicated at the anode target surface. Through the design of the double-layer anode structure (the inner-layer anode annular plate and the outer-layer anode annular plate), flowing and focusing of electron beams can be more effectively controlled. The structure is helpful for maintaining the stable form of the annular electron beam and reducing the diffusion and defocusing of the electron beam in the transmission process.

Description

Technical Field

[0001] The invention belongs to the technical field of high-current diodes, and in particular relates to a high-current diode with a double-layer anode structure for radiation field focusing and a use method thereof. Background Art

[0002] The high-current electron beam diode is mainly composed of a cathode and an anode in a vacuum. It is a device that can generate and accelerate high-current density electron beams. It plays an important role in many fields. Generating strong radiation X (γ) rays is one of the main uses of high-power high-current electron beam diodes. Among them, the strong pinch diode usually has a strong electron beam focusing effect, so the electron beam bombarding the anode will produce a very strong thermodynamic destructive effect, causing serious damage to the anode of the diode. At the same time, due to the high energy and intensity of the electron beam, the electrons emitted by the cathode are focused toward the center of the target by the pinch effect caused by the self-magnetic field, which will cause the electron beam to have a large incident angle and uneven radiation field.

[0003] In current pulse power devices, single-anode ring-plate configuration or rod-pinch diodes are more commonly used. In the strong pinch mode, the landing point of the electron beam on the anode moves over time, and is generally finally pinched and focused on the center of the target surface. High-energy radiation may cause serious damage to the target surface of the diode, affecting its long-term stability and performance. Summary of the invention

[0004] The object of the present invention is to provide a double-layer anode structure high-current diode for radiation field focusing and a method of using the same to solve the above-mentioned problems.

[0005] To achieve the above object, the present invention adopts the following technical solutions: A double-layer anode structure high-current diode for radiation field focusing comprises: an annular cathode plate, an outer anode annular plate, an inner anode annular plate and an anode target surface; the anode target surface is arranged side by side on the side of the inner anode annular plate, the annular cathode plate is sleeved on the outer side of the inner anode annular plate and the anode target surface, and a first cavity is formed between the inner anode annular plate and the anode target surface; the outer anode annular plate is sleeved on the outer side of the annular cathode plate, and a second cavity is formed between the outer anode annular plate and the annular cathode plate; the first cavity and the second cavity are connected at the anode target surface.

[0006] Furthermore, the openings of the first cavity and the second cavity away from the anode target surface are respectively an inner layer high-current pulse input port and an outer layer high-current pulse input port.

[0007] Furthermore, the annular cathode plate, the outer anode annular plate, the inner anode annular plate and the anode target surface are all cylindrical structures with openings at both ends.

[0008] Furthermore, the annular cathode plate, the outer anode annular plate and the inner anode annular plate at the inner high-current pulse input port and the outer high-current pulse input port are all extended outwardly and connected to the insulating support.

[0009] Furthermore, the inner anode annular plate and the anode target surface have the same diameter and are connected side by side; the anode target surface and one end of the outer anode annular plate are fixedly connected via an annular end plate.

[0010] Furthermore, the connection between the inner anode annular plate and the anode target surface is separated by a partition.

[0011] Furthermore, the axial length of the annular cathode plate is smaller than the axial length of the outer anode annular plate.

[0012] Furthermore, the materials used for the annular cathode plate, the outer annular anode plate and the inner annular anode plate are stainless steel; and the target surface material used for the anode target is tungsten or tantalum.

[0013] Furthermore, the thickness of the annular cathode plate is 10 to 20 mm, and the thickness of the outer annular anode plate and the inner annular anode plate is 10 to 15 mm.

[0014] Furthermore, a method for using a double-layer anode structure high-current diode for radiation field focusing comprises the following steps: In the initial stage of the outer voltage pulse, the current at the input port of the outer strong current pulse is small. During this period, the electron beam flows vertically from the cathode to the anode without producing a pinch effect. The voltage and current at the outer layer high current pulse input port are increased, and the self-magnetic field causes the outer layer electron orbit to bend, thereby gradually forming a weak pinch. At this time, the voltage pulse at the inner layer high current pulse input port is in the initial stage, and no pinch is generated at the inner layer high current pulse input port; The voltage of the outer layer high current pulse input port is raised to the peak value, the impedance is stable, the outer layer electron beam current is obviously pinched, forming a strong pinch electron current, and at the same time, as the voltage pulse at the inner layer high current pulse input port increases, the inner layer electron orbit is affected by the self-magnetic field and bends to produce weak pinch; The inner and outer electron beams are both in a strongly pinched state. The two electron beams are stably focused onto the anode target surface under the influence of the strong self-magnetic field and the interaction, so that the electron beams stably bombarding the anode target surface interact with it to produce X-rays or gamma rays.

[0015] Compared with the prior art, the present invention has the following technical effects: The present invention can more effectively control the flow and focusing of the electron beam through the design of a double-layer anode structure (an inner anode ring plate and an outer anode ring plate). This structure helps to maintain the shape stability of the annular electron beam and reduce the diffusion and defocusing of the electron beam during transmission.

[0016] The double-layer anode structure helps reduce the electron beam current density on a single path by dispersing the flow path of the electron beam. This can not only reduce the direct damage of the electron beam to the target surface, but also improve the uniformity of the radiation field.

[0017] The design of the double-layer anode structure enables the electron beam to be more evenly distributed before bombarding the anode target surface, thus forming a larger radiation field. This is conducive to the interaction between the electron beam and the target surface, and improves the generation efficiency and focusing effect of X-rays or gamma rays.

[0018] In the traditional single-anode ring-plate configuration or rod-pinch diode in the strong pinch mode, the electron beam tends to focus on the center of the target surface, resulting in uneven radiation field distribution. The double-layer anode structure can effectively avoid this problem by dispersing the flow and focus point of the electron beam.

[0019] Due to the reduction of electron beam current density and the uniform distribution of radiation field, the double-layer anode structure can significantly reduce the direct damage of electron beam to the target surface and extend the service life of the target surface.

[0020] The material selection mentioned in the technical solution (such as stainless steel and tungsten or tantalum) has good conductivity and corrosion resistance, and is suitable for the manufacture of high-current diodes. This technical solution is suitable for various application scenarios that require the generation and focusing of X-rays or gamma rays, such as medical, scientific research, industrial detection and other fields.

[0021] The use method of the present invention is optimized: by controlling the voltage and current of the outer layer high-current pulse input port and the inner layer high-current pulse input port in stages, the pinching and focusing process of the electron beam can be accurately controlled to improve the stability and focusing effect of the radiation field. When both the inner and outer layer electron beams are in a strong pinching state, the electron beams of the two layers are stably focused on the anode target surface under the influence of the strong self-magnetic field and the interaction, thereby improving the interaction efficiency between the electron beam and the target surface and the generation efficiency of X-rays or gamma rays.

[0022] In summary, this technical solution effectively solves the problems of uneven radiation field and severe target surface damage in the traditional single anode structure under the strong pinch mode by optimizing the design of the double-layer anode structure and the use method, improves the stability and focusing effect of the electron beam, and has broad practicality and promotion value. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram of the structure of the present invention.

[0024] Figure 2 It is a schematic diagram of the process of the present invention.

[0025] Figure 3 It is a schematic diagram of the connection between the present invention and the insulating support.

[0026] in: 1. Annular cathode plate; 2. Outer anode annular plate; 3. Inner anode annular plate; 4. Outer high-current pulse input port; 5. Inner high-current pulse input port; 6. Anode target surface; 7. Annular end plate; 8. Partition plate; 9. Insulation support. DETAILED DESCRIPTION

[0027] The present invention is further described below in conjunction with the accompanying drawings: Example 1, please refer to Figure 1 The present invention provides a double-layer anode structure high-current diode for radiation field focusing, comprising: an annular cathode plate 1, an outer anode annular plate 2, an inner anode annular plate 3 and an anode target surface 6; the anode target surface 6 is arranged side by side on the side of the inner anode annular plate 3, the annular cathode plate 1 is sleeved on the outer side of the inner anode annular plate 3 and the anode target surface 6, and a first cavity is formed between the inner anode annular plate 3 and the anode target surface 6; the outer anode annular plate 2 is sleeved on the outer side of the annular cathode plate 1, and a second cavity is formed between the outer anode annular plate 1; the first cavity and the second cavity are connected at the anode target surface 6.

[0028] The double-layer anode structure (inner anode ring plate and outer anode ring plate) combined with the annular cathode plate forms a complex but highly controllable electron beam transmission path. This structure allows the electron beam to be more finely controlled during transmission, which helps to achieve more precise focusing.

[0029] Through the design of the double-layer anode structure, the electron beam can be more evenly distributed before reaching the anode target surface. This helps to reduce the non-uniformity of the radiation field and improve the overall quality and consistency of the radiation field.

[0030] The connection design between the first cavity and the second cavity at the anode target surface enables the electron beam to form a more concentrated and uniform radiation field when bombarding the target surface, which is crucial for improving the generation efficiency and focusing effect of X-rays or gamma rays.

[0031] The double-layer anode structure effectively reduces the electron beam current density on a single path by dispersing the flow path of the electron beam. This not only helps to reduce the direct damage of the electron beam to the target surface, but also prolongs the service life of the target surface. At the same time, due to the reduction of the electron beam current density, the risk of the target surface being heated and damaged is also reduced accordingly, thereby improving the stability and reliability of the entire diode.

[0032] The design of the double-layer anode structure enables the electron beam to interact more fully with the target surface material when bombarding the anode target surface, improving the efficiency of X-ray or gamma ray generation. In addition, due to the optimization of the radiation field and the reduction of the electron beam current density, the radiation efficiency of the entire diode has been significantly improved.

[0033] The double-layer anode structure provides more flexibility for voltage and current control. By adjusting the voltage and current of the outer layer high-current pulse input port and the inner layer high-current pulse input port respectively, the electron beam pinching and focusing process can be precisely controlled. This flexibility enables the diode to adapt to different application scenarios and requirements, improving its practicality and versatility.

[0034] In summary, the double-layer anode structure high-current diode for radiation field focusing provided by the present invention, through its unique design and optimization, realizes more precise control of the electron beam, optimizes the radiation field distribution, reduces the electron beam current density and target surface damage, improves the radiation efficiency, provides flexible voltage and current control, and maintains the characteristics of compact structure and easy manufacturing. These technical effects make the diode have broad application prospects and huge potential in the fields of radiation field focusing and X-ray or gamma ray generation.

[0035] Embodiment 2, the present invention provides a double-layer anode structure high-current diode for radiation field focusing, specifically comprising: The double-layer anode structure high-current diode for radiation field focusing mainly includes an annular cathode plate 1, an outer anode annular plate 2, an inner anode annular plate 3 and an anode target surface 6. Among them, the side of the inner anode annular plate 3 is closely arranged with the anode target surface 6, and the annular cathode plate 1 is sleeved on the outer side of the inner anode annular plate 3 and the anode target surface 6, and together they form a first cavity. The outer anode annular plate 2 is further sleeved on the outer side of the annular cathode plate 1, and a second cavity is formed between the annular cathode plate 1. The first cavity and the second cavity are interconnected at the position of the anode target surface 6, and such a design is conducive to the transmission and focusing of the electron beam.

[0036] At a position away from the anode target surface 6, the first cavity and the second cavity are respectively provided with an inner layer high current pulse input port 5 and an outer layer high current pulse input port 4. These ports provide convenience for the injection and regulation of the electron beam. In addition, the annular cathode plate 1, the outer layer anode annular plate 2, the inner layer anode annular plate 3 and the anode target surface 6 are all designed as cylindrical structures with openings at both ends. This structure not only ensures the smooth transmission of the electron beam, but also facilitates processing and assembly. The inner layer anode annular plate 3 and the anode target surface 6 have the same diameter and are connected side by side. They are fixedly connected to one end of the outer layer anode annular plate 2 through an annular end plate 7, ensuring the stability and reliability of the entire structure. The annular cathode plate 1, the outer layer anode annular plate 2 and the inner layer anode annular plate 3 at the inner layer high current pulse input port 5 and the outer layer high current pulse input port 4 all extend outward and are connected to the insulating support 9.

[0037] At the same time, the connection between the inner anode annular plate 3 and the anode target surface 6 is also separated by a partition 8 to avoid unnecessary interference of the electron beam during the transmission process.

[0038] In terms of material selection, the annular cathode plate 1, the outer annular anode plate 2 and the inner annular anode plate 3 are all made of stainless steel, which has good conductivity and corrosion resistance and is suitable for the manufacture of high-current diodes. The anode target surface 6 is made of target materials such as tungsten or tantalum, which can produce strong X-rays or gamma rays when bombarded by electron beams. In terms of size parameters, the axial length of the annular cathode plate 1 is designed to be smaller than the axial length of the outer anode annular plate 2. This design helps to optimize the transmission path and focusing effect of the electron beam. At the same time, the thickness of the annular cathode plate 1 is controlled between 10 and 20 mm, while the thickness of the outer annular anode plate 2 and the inner annular anode plate 3 is controlled between 10 and 15 mm. The selection of these size parameters not only ensures the strength of the structure, but also avoids unnecessary material waste.

[0039] The present invention adopts the above technical scheme and designs a high-current diode with a double-layer anode structure, which can stabilize the annular electron beam shape, and can maintain a large radiation field while reducing the electron beam current density, which is conducive to the focusing of the rays generated after the electron beam bombards the anode. The double-layer anode structure well solves the disadvantages of the currently commonly used single-anode ring-plate configuration or rod pinch diode, in which the electron beam is focused on the center of the target surface in the strong pinch mode, the radiation field is uneven, and the target surface is seriously damaged, and is suitable for wide promotion and application.

[0040] Working principle: large voltage pulses are injected from the outer layer high current pulse input port 4 and the inner layer high current pulse input port 5 respectively, so that the cathode emits electrons to form an electron beam under the action of a strong electric field. At the same time, the focusing position of the electron beam can be adjusted by adjusting the delay time of the inner and outer layer voltage pulses. In this process, the currents of the inner and outer layers of the diode are significantly increased. Subsequently, under the action of the self-magnetic field, the electrons of the inner and outer layers are axially offset and begin to enter a pinched state. Under the combined influence of the electric field and the self-magnetic field, the electron beams of the two layers can be stably focused to the corresponding position of the anode target surface, so that the electron beam can stably bombard the anode target surface and interact with it to produce X-rays or gamma rays.

[0041] When the voltage pulse input from the inner layer is delayed by a certain period of time from the voltage pulse input from the outer layer, the basic working process is shown as follows: Figure 2 As shown, it is divided into the following four stages: 1) Non-pinching stage of the outer electron beam: In the initial stage of the outer voltage pulse, the current is very small and the self-magnetic field can be ignored. During this period, the electron beam basically flows vertically from the cathode to the anode, and the electron beam current is very weak and does not produce a pinching effect.

[0042] 2) Outer electron beam weak pinching and inner non-pinching stage: As the outer input voltage and current continue to rise, the influence of the self-magnetic field begins to expand, causing the outer electron orbit to bend and gradually form a weak pinch. At this time, the inner voltage pulse is in the initial stage, the self-magnetic field it generates can be ignored, and the inner electron beam does not pinch.

[0043] 3) The stage of strong pinching of the outer electron beam and weak pinching of the inner layer: In this stage, the outer layer input is near the voltage peak and the impedance is stable. The Lorentz force generated by the extremely high current causes the outer electron beam to pinch significantly, thus forming an extremely strong pinched electron flow. At the same time, as the inner layer voltage pulse increases, the inner layer electron orbit is affected by the self-magnetic field and bends to produce weak pinching.

[0044] 4) Stable focusing stage of inner and outer electron beams: The inner and outer electron beams are both in a strong pinch state. Under the influence of the strong self-magnetic field and the interaction, the two layers of electron beams can be stably focused to a certain position on the anode target surface, thereby stably bombarding the anode target surface and interacting with it to produce X-rays or gamma rays.

[0045] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A double-layer anode structure high-current diode for radiation field focusing, characterized in that: include: An annular cathode plate (1), an outer anode annular plate (2), an inner anode annular plate (3) and an anode target surface (6); the anode target surface (6) is arranged side by side on the side of the inner anode annular plate (3); the annular cathode plate (1) is sleeved on the outer side of the inner anode annular plate (3) and the anode target surface (6), and a first cavity is formed between the inner anode annular plate (3) and the anode target surface (6); the outer anode annular plate (2) is sleeved on the outer side of the annular cathode plate (1), and a second cavity is formed between the annular cathode plate (1); the first cavity and the second cavity are connected at the anode target surface (6).

2. The double-layer anode structure high-current diode for radiation field focusing according to claim 1, characterized in that: The openings of the first cavity and the second cavity away from the anode target surface (6) are respectively an inner layer high current pulse input port (5) and an outer layer high current pulse input port (4).

3. The double-layer anode structure high-current diode for radiation field focusing according to claim 2, characterized in that: The annular cathode plate (1), the outer anode annular plate (2), the inner anode annular plate (3) and the anode target surface (6) are all cylindrical structures with openings at both ends.

4. The double-layer anode structure high-current diode for radiation field focusing according to claim 3, characterized in that: The annular cathode plate (1), the outer anode annular plate (2) and the inner anode annular plate (3) at the inner layer high current pulse input port (5) and the outer layer high current pulse input port (4) all extend outwards and are connected to the insulating support (9).

5. The double-layer anode structure high-current diode for radiation field focusing according to claim 3, characterized in that: The inner anode annular plate (3) and the anode target surface (6) have the same diameter and are connected side by side; the anode target surface (6) and one end of the outer anode annular plate (2) are fixedly connected via an annular end plate (7).

6. The double-layer anode structure high-current diode for radiation field focusing according to claim 5, characterized in that: The connection between the inner anode annular plate (3) and the anode target surface (6) is separated by a partition (8).

7. The double-layer anode structure high current diode for radiation field focusing according to claim 1, characterized in that: The axial length of the annular cathode plate (1) is smaller than the axial length of the outer anode annular plate (2).

8. The double-layer anode structure high-current diode for radiation field focusing according to claim 1, characterized in that: The materials used for the annular cathode plate (1), the outer annular anode plate (2) and the inner annular anode plate (3) are stainless steel; and the target surface material used for the anode target (6) is tungsten or tantalum.

9. The double-layer anode structure high current diode for radiation field focusing according to claim 1, characterized in that: The thickness of the annular cathode plate (1) is 10 to 20 mm, and the thickness of the outer annular anode plate (2) and the inner annular anode plate (3) are 10 to 15 mm.

10. A method for using a double-layer anode structure high-current diode for radiation field focusing, characterized in that: The double-layer anode structure high-current diode for radiation field focusing according to any one of claims 1 to 9 comprises the following steps: In the initial stage of the outer voltage pulse, the current at the input port of the outer strong current pulse is small. During this period, the electron beam flows vertically from the cathode to the anode without producing a pinch effect. The voltage and current of the outer layer high current pulse input port are increased, and the self-magnetic field causes the outer layer electron orbit to bend, thereby gradually forming a weak pinch. At this time, the voltage pulse at the inner layer high current pulse input port is in the initial stage, and no pinch is generated at the inner layer high current pulse input port; The voltage of the outer layer high current pulse input port is raised to the peak value, the impedance is stable, the outer layer electron beam current is obviously pinched, forming a strong pinch electron current, and at the same time, as the voltage pulse at the inner layer high current pulse input port increases, the inner layer electron orbit is affected by the self-magnetic field and bends to produce weak pinch; The inner and outer electron beams are both in a strongly pinched state. The two electron beams are stably focused onto the anode target surface under the influence of the strong self-magnetic field and the interaction, so that the electron beams stably bombarding the anode target surface interact with it to produce X-rays or gamma rays.

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