Wafer surface oxidation film processing device and processing method

Abstract

The invention provides a wafer surface oxidation film treatment device and method, the wafer surface oxidation film treatment device comprises a gas source, a film layer treatment module and a waste gas treatment module, the film layer treatment module comprises an input port, a bearing table, a height monitoring device, an indicator titration device and an output port, the input port is connected with a gas supply port of the gas source through a first pipeline, the at least one bearing table is used for bearing a wafer, the height monitoring device is fixed on the bearing table, and the indicator titration device is located above the bearing table and is spaced from the upper surface of the bearing table by a preset distance; and the waste gas treatment module is connected with the output port through a second pipeline. Through the combination of the height monitoring device and the indicator titrated by the indicator titration device, the etching end point of the oxide film is convenient to monitor, the etching time does not need to be determined by measuring the film thickness of the oxide film, the precision of subsequent testing is improved, the utilization rate of an etching agent is improved, and the cost of chemicals is reduced.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor integrated circuit manufacturing, and relates to a wafer surface oxide film processing device and a processing method. Background Art

[0002] The silicon wafer surface treatment system is widely used in semiconductor wafer micro-contamination detection, and is mainly used to collect metal contamination impurities on the surface of silicon wafers. In the early stage, the surface of the silicon wafer is mainly treated to remove the oxide film on the surface of the silicon wafer. Usually, hydrofluoric acid or hydrofluoric acid gas is introduced into the silicon wafer surface treatment instrument to etch the oxide layer on the surface of the silicon wafer, so that the surface of the silicon wafer changes from hydrophilic to hydrophobic, and then the equipment is used to scan the liquid to collect the metal on the surface of the silicon wafer. At present, in the etching stage, the etching degree is controlled by fixing the time and gas flow of the hydrofluoric acid gas. For the naturally oxidized oxide layer, its thickness is thinner and the processing time required is shorter; for silicon wafers with thicker oxide layers, the processing time required is longer, so the thickness of the oxide film on the surface of the silicon wafer must be measured in advance, which increases the preparation work before the test. Before each batch of tests, it is necessary to understand the sample information to increase the efficiency of laboratory testing. However, in actual production, the oxide film thickness of each wafer is usually not tested before processing. Only a fixed amount of hydrofluoric acid is introduced, and the amount of hydrofluoric acid introduced is determined by fixing the time of introducing hydrofluoric acid. This etching method, which cannot adjust the etching time or amount of hydrofluoric acid in real time according to the actual film thickness, usually leads to insufficient or excessive hydrofluoric acid being introduced. Insufficient hydrofluoric acid introduction will cause insufficient etching of the oxide film, the surface will not become hydrophobic, and the scanning component will not be able to collect metal on the surface of the silicon wafer, resulting in pre-treatment failure, thereby wasting samples and reducing equipment production capacity. Excessive hydrofluoric acid will cause the water produced by etching to accumulate on the surface of the silicon wafer, resulting in changes in the test volume, and even subsequent measurement errors, affecting the accuracy of the test, and also wasting the work efficiency of the instrument. This method of removing the oxide film on the surface of the silicon wafer by fixing the amount of hydrofluoric acid or etching time greatly affects the test efficiency, capacity improvement and test accuracy of the equipment.

[0003] Therefore, there is an urgent need to find a method for treating the oxide film on the surface of a wafer that does not require pre-test preparation and can promptly reflect the progress of etching. Summary of the invention

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a wafer surface oxide film processing device and a processing method, which is used to solve the problem in the prior art that the etching time or etching dose cannot be adjusted in real time when processing the wafer surface oxide film without measuring the film thickness.

[0005] In order to achieve the above-mentioned object and other related objects, the present invention provides a wafer surface oxide film processing device, comprising:

[0006] Gas source;

[0007] A film processing module, comprising an input port, a carrier, a height monitoring device, an indicator titration device and an output port, wherein the input port is connected to the gas supply port of the gas source through a first pipeline, at least one of the carriers is used to carry a wafer, the height monitoring device is fixed on the carrier, and the indicator titration device is located above the carrier and is spaced a preset distance from the upper surface of the carrier;

[0008] The exhaust gas treatment module is connected to the output port through a second pipeline.

[0009] Optionally, the wafer surface oxide film processing device also includes a data processing unit and a display unit, the data processing unit is used to receive and process the measurement data of the height monitoring device in real time, and the display unit is used to display the processing results of the measurement data of the height monitoring device in real time.

[0010] The present invention also provides a method for processing an oxide film on a wafer surface, comprising the following steps:

[0011] Provide a wafer to be processed and the wafer surface oxide film processing device as described above;

[0012] Placing the wafer on the carrier, and using the indicator titration device to form a preset volume of indicator on the upper surface of the wafer;

[0013] Turning on the height monitoring device to monitor the height of the indicator in real time, and turning on the gas source to introduce the etchant gas into the film layer processing module;

[0014] The change of the height of the indicator is observed in real time based on the output result of the height monitoring device. When the height of the indicator does not change within a preset time, the introduction of the etchant gas is stopped and the wafer is taken out of the film layer processing module.

[0015] Optionally, the indicator comprises pure water.

[0016] Optionally, the volume range of the indicator is 0.05 ml to 5.0 ml.

[0017] Optionally, the height monitoring device comprises a laser height measurer.

[0018] Optionally, the laser height meter includes a laser and a laser receiver, the laser receiver is located at the intersection of the optical path of the laser and the edge of the supporting platform, and the laser and the laser receiver can move up and down.

[0019] Optionally, the indicator is located in the optical path of the laser.

[0020] Optionally, the etchant gas includes hydrofluoric acid gas.

[0021] Optionally, the wafer surface oxide film processing device also includes a data processing unit and a display unit, the data processing unit receives and processes the measurement data of the height monitoring device in real time, and the display unit displays the processing results of the measurement data of the height monitoring device in real time.

[0022] As described above, the wafer surface oxide film processing device and processing method of the present invention improve the structure of the processing device for processing the wafer surface oxide film, and set an indicator titration device above the carrier to titrate a preset amount of the indicator on the wafer, and use the hydrophilicity and hydrophobicity of the wafer surface when an oxide film is formed and when there is no oxide film, respectively, to make the indicator spread and gather, thereby causing the height of the indicator to change, and at the end of etching, the surface of the wafer is completely hydrophobic, and the height of the indicator no longer changes, and the height monitoring device is set on the carrier to monitor the indicator in real time. The change in height of the indicator can be used to conveniently determine the endpoint of etching by the change in the height of the indicator. The etching endpoint is determined by only using the change in the height of the indicator. There is no need to consider the effect of the thickness of the oxide film on the etching time, which eliminates the need to test the thickness of the oxide film on the wafer surface and set the etching time before processing, thereby improving sample production efficiency. At the same time, the oxide film on the wafer surface can be completely removed, thereby improving the success rate of sample preparation, improving equipment utilization efficiency and reducing sample costs, thereby avoiding the effect of too long etching time on the test results of metal contaminants on the wafer surface, effectively improving the utilization rate of the etchant, reducing the cost of chemicals, and having high industrial utilization value. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a partial structural schematic diagram of a film layer processing module of the wafer surface oxide film processing device of the present invention.

[0024] Figure 2 Shown is a process flow chart of the wafer surface oxide film processing method of the present invention.

[0025] Figure 3 It is a partial structural schematic diagram of a film layer processing module after forming an indicator in the wafer surface oxide film processing method of the present invention.

[0026] Figure 4 It is a partial structural schematic diagram of a film layer processing module after etching of the wafer surface oxide film processing method of the present invention is completed.

[0027] Description of Figure Numbers

[0028] 1. Film processing module

[0029] 11. Loading platform

[0030] 12 Height monitoring device

[0031] 121 Laser

[0032] 122 Laser Receiver

[0033] 2 Wafer

[0034] 3 Indicator DETAILED DESCRIPTION

[0035] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0036] See also Figures 1 to 4 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0037] Embodiment 1

[0038] This embodiment provides a wafer surface oxide film processing device, such as Figure 1 As shown, it is a partial structural schematic diagram of a film layer processing module of a wafer surface oxide film processing device, including a gas source (not shown), a film layer processing module 1 and an exhaust gas treatment module (not shown), wherein the film layer processing module 1 includes an input port (not shown), a carrier platform 11, a height monitoring device 12, an indicator titration device (not shown) and an output port (not shown), the input port is connected to the gas supply port of the gas source through a first pipeline (not shown), at least one of the carrier platforms 11 is used to carry wafers, the height monitoring device 12 is fixed on the carrier platform 11, the indicator titration device is located above the carrier platform 11 and is spaced a preset distance from the upper surface of the carrier platform 11; the exhaust gas treatment module is connected to the output port through a second pipeline.

[0039] Specifically, the gas source is used to provide the film layer processing module 1 with etchant gas. The gas source may be a device for storing and delivering etchant gas, or a device for generating and delivering etchant gas.

[0040] Specifically, the first pipeline is used to transport the etchant gas in the gas source to the input port. While ensuring the convenience of inputting the etchant gas, the cross-sectional size, shape and length of the first pipeline can be selected according to actual conditions and are not limited here.

[0041] Specifically, at least one first flow control valve (not shown) is disposed on the first pipeline or at the input port to control the flow rate and flow velocity of the etchant gas.

[0042] Specifically, the input port is used to introduce the etchant gas into the film layer processing module. While ensuring that the etchant gas is conveniently introduced into the film layer processing module, the position, opening size and shape of the input port can be set according to actual conditions and are no longer restricted here.

[0043] Specifically, under the condition that the carrier platform 11 does not react with the etchant gas for etching the wafer, the material of the carrier platform 11 can be selected according to actual conditions, and is not limited here.

[0044] Specifically, the size of the carrier 11 is not less than the size of the wafer to be processed, so that the wafer to be processed can be stably placed on the carrier 11 .

[0045] Specifically, under the condition that the carrier platform 11 can stably place the wafer to be processed, the thickness and shape of the carrier platform 11 can be selected according to actual conditions, and are not limited here.

[0046] Specifically, the upper surface of the carrier 11 is also provided with a card slot (not shown) with the same size and shape as the wafer to be processed, and the depth of the card slot is not less than the thickness of the wafer to be processed, so as to facilitate the wafer to be processed to be fixed on the carrier 11 and make only the upper surface of the wafer to be processed exposed, and also facilitate the indicator titration device to titrate the indicator on the exposed upper surface of the wafer to be processed.

[0047] Specifically, under the condition that the wafer to be processed is stably placed on the carrier 11 , the slot may be a slot structure with a fixed size or a fixing structure with an adjustable size.

[0048] Specifically, the height monitoring device 12 is used to monitor the height change of the indicator dropped by the indicator titration device on the upper surface of the wafer to be processed, and output the indicator height change data on the upper surface of the wafer to be processed in real time.

[0049] Specifically, the height monitoring device 12 is fixed to the periphery of the card slot in the carrier 11. In this embodiment, the height monitoring device 12 is fixed to the edge of the carrier 11 at the periphery of the card slot.

[0050] Specifically, the indicator titration device is used to titrate a preset volume of indicator on the surface of the wafer to be processed.

[0051] Specifically, under the condition of ensuring that the indicator can be titrated in a preset area on the upper surface of the wafer to be processed, the indicator titration device located above the wafer to be processed can be movable or fixed.

[0052] Specifically, while ensuring convenient titration of the indicator on the upper surface of the wafer to be processed, the position of the vertical projection of the indicator titration port of the indicator titration device on the wafer to be processed can be selected according to actual conditions and is no longer restricted here; the distance between the indicator titration port of the indicator titration device and the upper surface of the wafer to be processed can be selected according to actual conditions and is no longer restricted here.

[0053] Specifically, under the condition that the oxide film processing device on the surface of the wafer to be processed is convenient for processing the oxide film on the surface of the wafer to be processed, the position, size and shape of the output port can be selected according to actual conditions and are not limited here.

[0054] Specifically, the second pipeline is used to transport the exhaust gas in the membrane layer treatment module 12 to the exhaust gas treatment module. While ensuring that the exhaust gas in the membrane layer treatment module 12 is convenient to transport, the cross-sectional size, shape and length of the second pipeline can be selected according to actual conditions and are no longer restricted here.

[0055] Specifically, at least one second flow control valve (not shown) is disposed on the second pipeline or at the output port to control the flow rate and velocity of the exhaust gas in the membrane treatment module 12 .

[0056] As an example, the wafer surface oxide film processing device also includes a data processing unit (not shown) and a display unit (not shown), wherein the data processing unit is used to receive and process the measurement data of the height monitoring device 12 in real time, and the display unit is used to display the processing results of the measurement data of the height monitoring device 12 in real time.

[0057] Specifically, the data processing unit can also be used to control the operation of the indicator titration device, the support platform and the height monitoring device, and at the same time control the flow rate of the etchant gas at the etchant gas input end and the exhaust gas removal speed at the exhaust gas output end. The display unit is used to display the control parameters of each component.

[0058] Specifically, the exhaust gas treatment module collects and treats the exhaust gas in the film layer treatment module through the output port and the second pipeline, so as to prevent chemical gases from escaping into the air and polluting the air during the process of removing the oxide film on the surface of the wafer.

[0059] Specifically, by setting the indicator titration device and the height monitoring device 12 on the wafer surface oxide film processing device, the titration of the indicator is facilitated. At the same time, due to the setting of the height monitoring device 12, the height change of the indicator on the upper surface of the wafer to be tested during the processing can be monitored in real time, and the etching condition of the oxide film on the upper surface of the wafer can be judged based on the height change of the indicator, so as to facilitate the timely stopping of the processing process at the end of etching, so as to avoid too long processing time, which will cause more liquid to accumulate on the surface of the wafer to be tested, affecting the results of subsequent detection of metal contaminants on the wafer surface.

[0060] The wafer surface oxide film processing device of this embodiment can monitor the height change of the indicator on the upper surface of the wafer in real time during the processing process by setting the height monitoring device 2 on the supporting platform 11, and judge the etching condition of the oxide film on the upper surface of the wafer based on the height change of the indicator, so as to stop the processing process in time when the etching is finished, so as to avoid too long processing time, which will cause more liquid to accumulate on the surface of the wafer to be tested, affecting the results of subsequent detection of metal contaminants on the wafer surface.

[0061] Embodiment 2

[0062] This embodiment provides a method for treating an oxide film on a wafer surface. Figure 2 FIG. 1 is a process flow chart of the method for treating the oxide film on the surface of a wafer, comprising the following steps:

[0063] S1: providing a wafer to be processed and a wafer surface oxide film processing device as described in Embodiment 1;

[0064] S2: placing the wafer on the carrier, and using the indicator titration device to form a preset volume of indicator on the upper surface of the wafer;

[0065] S3: turning on the height monitoring device to monitor the height of the indicator in real time, and turning on the gas source to introduce the etchant gas into the film layer processing module;

[0066] S4: observing the change of the height of the indicator in real time based on the output result of the height monitoring device, and when the height of the indicator does not change within a preset time, stopping the introduction of the etchant gas and taking out the wafer from the wafer surface oxide film processing device.

[0067] Specifically, the step S1 and the step S2 are performed: providing a wafer 3 to be processed and a wafer surface oxide film processing device described in Example 1; placing the wafer 2 on the carrier 11, and using the indicator titration device to form a preset volume of indicator 3 on the upper surface of the wafer 2.

[0068] Specifically, the material of the wafer 2 includes silicon, silicon germanium or other suitable semiconductor materials. In this embodiment, the wafer 2 is a silicon wafer.

[0069] Specifically, the size of the wafer 2 is determined by actual production conditions and is not limited here.

[0070] Specifically, the wafer 2 is placed in a designated area of ​​the carrier 11 , and a method of placing the wafer 2 on the carrier 11 includes robot arm transmission, belt transmission, or other suitable transmission methods.

[0071] Specifically, a slot is provided on the carrier 11 , and the wafer 2 is located in the slot so that the wafer 2 can be placed on the carrier 11 more stably.

[0072] Specifically, Figure 3 As shown, it is a schematic diagram of the structure after the indicator 3 is formed (the dotted line in the figure is a laser beam). After the wafer 2 is placed at a specified position on the carrier 1, the indicator titration device moves to a preset position above the wafer 2 to titrate the indicator 3 toward the upper surface of the wafer 2, or the indicator titration device fixed above the wafer 2 titrates the indicator 3 toward the upper surface of the wafer 2, that is, the indicator titration device can be fixed or movable.

[0073] Specifically, the indicator 3 on the upper surface of the wafer 2 is located in the central area of ​​the wafer 2 .

[0074] As an example, the indicator 3 includes pure water or other suitable indicating reagents. In this embodiment, pure water is used as the indicator 3.

[0075] Specifically, due to the presence of the oxide film layer on the surface of the wafer 2, the surface of the wafer 2 is hydrophilic, so that the indicator 3 on the upper surface of the wafer 2 that has not been treated with the oxide film is spread flat on the upper surface of the wafer 2, thereby making the height of the indicator 3 lower.

[0076] As an example, the volume range of the indicator 3 is 0.05 ml to 5.0 ml, which is convenient for observing the height change of the indicator 3 and does not affect the subsequent detection results of metal pollutants.

[0077] Specifically, the step S3 and the step S4 are performed: the height monitoring device 12 is turned on to monitor the height of the indicator 3 in real time, and the gas source is turned on to introduce the etchant gas into the film layer processing module 1; based on the output result of the height monitoring device 12, the change of the height of the indicator 3 is observed in real time, and when the height of the indicator 3 does not change within a preset time, the introduction of the etchant gas is stopped and the wafer 2 is taken out of the film layer processing module 1.

[0078] As an example, the height monitoring device 12 includes a laser height measuring device or other suitable height measuring instruments.

[0079] As an example, the laser height meter includes a laser 121 and a laser receiver 122 . The laser receiver 122 is located at the intersection of the optical path of the laser 121 and the edge of the support platform 11 . The laser 121 and the laser receiver 122 can move up and down.

[0080] Specifically, the laser height meter is used as the height monitoring device 12, with high measurement accuracy. The laser and the laser receiver can move up and down, which is convenient for measurement and can measure the height change of the indicator 3 in real time and output the measurement data, thereby facilitating timely understanding of the oxide film treatment status of the surface of the wafer 2.

[0081] Specifically, the position of the indicator 2 on the upper surface of the wafer 2 can be selected according to actual conditions while ensuring that the height monitoring device 2 can measure and monitor the height change of the indicator 3 on the upper surface of the wafer 2. In this embodiment, the indicator 3 is located in the central area of ​​the wafer 2.

[0082] As an example, the indicator 3 is located in the optical path of the laser 121 .

[0083] Specifically, since the indicator 3 is located on the optical path of the laser 121 , the height of the indicator 3 is measured by utilizing the difference in the propagation paths of the light emitted by the laser 121 in the air and in the propagation paths of the light from the air into the indicator 3 and through the indicator 3 .

[0084] Specifically, after the gas source is turned on, the etchant gas in the gas source enters the film layer processing module 1 through the first pipeline and the input port.

[0085] Specifically, at least one first flow control valve is arranged on the first pipeline or at the input port. By setting the first flow control valve on the flow path of the etchant gas between the gas source and the film layer processing module 1, the first flow control valve can be regulated to regulate the flow rate and flow velocity of the etchant gas from the gas source to the film layer processing module 1.

[0086] As an example, the etchant gas includes hydrofluoric acid (HF) gas or other suitable etching gas. In this embodiment, since the wafer 2 is a silicon wafer, the oxide film on the surface of the silicon wafer is silicon oxide, and the HF gas only reacts with the silicon oxide on the surface of the silicon wafer, and does not react with the silicon in the silicon wafer, and the HF gas is very soluble in water to form hydrofluoric acid, and can still etch the silicon oxide layer of the part of the silicon wafer surface covered by pure water, which can ensure the complete removal of the silicon oxide layer on the surface of the silicon wafer, and facilitate the subsequent detection of metal contaminants. Therefore, HF gas is selected as the etchant gas, which can achieve complete removal of the silicon oxide film layer on the surface of the silicon wafer without damaging the silicon layer in the silicon wafer.

[0087] Specifically, since the surface of the wafer 2 not covered with an oxide film is hydrophobic, the etchant gas gradually removes the oxide film layer on the surface of the wafer 2, and the hydrophobicity of the wafer 2 becomes more and more obvious. The indicator 3 located on the upper surface of the wafer 2 gradually gathers together, and the height of the indicator 3 gradually increases. When the oxide film on the surface of the wafer 2 is completely removed, the indicator 3 forms an aggregated state, and the height of the indicator 3 reaches a maximum and does not change. Then, the end point of the oxide film layer etching can be determined by the change in the height of the indicator 3, thereby achieving effective and controllable etching for different oxide film layer thicknesses on the surface of the wafer 2, thereby avoiding the oxide film layer on the surface of the wafer 2 being not completely removed due to too short etching time, resulting in sample processing failure, or the etching time being too long, resulting in more water accumulating on the surface of the wafer 2, resulting in changes in the test volume of subsequent metal contaminant detection, and making the subsequent metal contaminant detection results inaccurate.

[0088] As an example, the wafer surface oxide film processing device also includes a data processing unit and a display unit. The data processing unit receives and processes the measurement data of the height monitoring device 12 in real time, and the display unit displays the processing results of the measurement data of the height monitoring device 12 in real time to facilitate the judgment of the end point of etching the oxide film layer on the surface of the wafer 2.

[0089] Specifically, in the process of etching the oxide film layer on the surface of the wafer 2, the height monitoring device 12 is used to transmit the measurement data to the data processing unit in real time. The data processing unit processes the measurement data fed back by the height monitoring device 12 and presents the processing results in the form of a graph on the display interface of the display unit. The operator can judge the end point of etching according to the height change of the indicator 3 displayed on the display unit, effectively controlling the accuracy of the etching time, avoiding the problem of etching time being too short or too long, and ensuring the success rate of removing the oxide film on the surface of the wafer.

[0090] Specifically, under the condition that the liquid accumulated on the surface of the wafer 2 has no influence on the subsequent detection results, the time range in which the height of the indicator 3 remains unchanged can be selected according to actual conditions and is not limited here.

[0091] Specifically, the method of taking the wafer 2 out of the film processing module 1 includes robot arm transmission, conveyor belt transmission or other suitable transmission methods.

[0092] Specifically, Figure 4 As shown, it is a schematic diagram of the structure after etching. When an oxide film is formed on the surface of the wafer 2, its surface has hydrophilic properties. When there is no oxide film on the surface of the wafer 2, its surface has hydrophobic properties. In the process of etching the oxide film on the surface of the wafer 2, the surface of the wafer 2 will change from hydrophilic to hydrophobic. The indicator 3 spreads on the hydrophilic surface and gathers on the hydrophobic surface, and then the height of the indicator 3 will change. By using the wafer surface oxide film processing device described in Example 1 to process the oxide film on the surface of the wafer 2, the change in the height of the indicator 3 can be observed in real time, the end point of etching can be determined and the etching process can be terminated. The etching end point is easy to judge, and the processing time can be automatically controlled based on the film thickness of the oxide film on the surface of the wafer 2, thereby effectively controlling the etching time.

[0093] Specifically, by using the wafer surface oxide film processing device described in Example 1 to process the oxide film on the surface of the wafer 2, it is ensured that the oxide film on the surface of the wafer 2 is completely removed, thereby improving the success rate of sample preparation, improving equipment utilization efficiency and reducing sample costs, avoiding the influence of excessive etching time on the metal contaminant test results on the surface of the wafer 2, effectively improving the utilization rate of the etchant, reducing the cost of chemicals, and at the same time eliminating the step of measuring the oxide film thickness on the surface of the wafer 2 before etching, thereby improving sample production efficiency.

[0094] The wafer surface oxide film processing method of the present embodiment utilizes that when the surface of the wafer 2 has an oxide film and when it does not have an oxide film, the surface of the wafer 2 is hydrophilic and hydrophobic respectively, and the indicator 3 is formed on the surface of the wafer 2. The indicator 3 spreads on the hydrophilic surface and gathers on the hydrophobic surface, thereby causing the height of the indicator 3 to change. The oxide film on the surface of the wafer 2 is processed by the wafer surface oxide film processing device described in Example 1, and the height of the indicator 3 is monitored in real time, which is convenient for judging the etching endpoint. The processing time can be automatically controlled based on the film thickness of the oxide film on the surface of the wafer 2, and there is no need to test the film thickness of the oxide film on the surface of the wafer 2 before processing, thereby improving the sample production efficiency; at the same time, it is ensured that the oxide film on the surface of the wafer 2 can be completely removed, thereby improving the success rate of sample preparation, improving the equipment utilization efficiency and reducing the sample cost, avoiding the influence of the metal contaminant test result on the surface of the wafer 2 due to the etching time being too long, effectively improving the utilization rate of the etchant and reducing the cost of chemicals.

[0095] In summary, the wafer surface oxide film processing device and processing method of the present invention improve the structure of the processing device for processing the oxide film on the wafer surface, and set an indicator titration device above the carrier platform for titrating the indicator on the wafer, and use the hydrophilicity and hydrophobicity of the wafer surface when there is an oxide film and when there is no oxide film, respectively, so that the indicator shows the phenomenon of spreading and gathering, and then the height of the indicator changes, and at the end of etching, the height of the indicator no longer changes, and a height monitoring device is set on the carrier platform for real-time monitoring of the change of the indicator height, which is convenient for judging the end point of etching, and the etching time can be adjusted based on the film thickness, and the etching end point is judged by the indicator, and there is no need to test the oxide film thickness of the wafer surface before processing and set the etching time, which improves the sample production efficiency; at the same time, the oxide film on the wafer surface can be completely removed, which improves the success rate of sample preparation, improves the equipment utilization efficiency and reduces the sample cost, avoids the etching time being too long to affect the metal contaminant test results on the wafer surface, effectively improves the utilization rate of the etchant, and reduces the cost of chemicals. Therefore, the present invention effectively overcomes the various shortcomings in the prior art and has a high industrial utilization value.

[0096] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A wafer surface oxide film processing device, characterized in that: include: Gas source; A film processing module, comprising an input port, a carrier, a height monitoring device, an indicator titration device and an output port, wherein the input port is connected to the gas supply port of the gas source through a first pipeline, at least one of the carriers is used to carry a wafer, the height monitoring device is fixed on the carrier, and the indicator titration device is located above the carrier and is spaced a preset distance from the upper surface of the carrier; The exhaust gas treatment module is connected to the output port through a second pipeline.

2. The method for treating an oxide film on a wafer surface according to claim 1, wherein: The wafer surface oxide film processing device also includes a data processing unit and a display unit. The data processing unit is used to receive and process the measurement data of the height monitoring device in real time, and the display unit is used to display the processing results of the measurement data of the height monitoring device in real time.

3. A method for treating an oxide film on a wafer surface, characterized in that: The following steps are involved: Provide a wafer to be processed and a wafer surface oxide film processing device as claimed in any one of claims 1 to 2; Placing the wafer on the carrier, and using the indicator titration device to form a preset volume of indicator on the upper surface of the wafer; Turning on the height monitoring device to monitor the height of the indicator in real time, and turning on the gas source to introduce the etchant gas into the film layer processing module; The change of the height of the indicator is observed in real time based on the output result of the height monitoring device. When the height of the indicator does not change within a preset time, the introduction of the etchant gas is stopped and the wafer is taken out of the film layer processing module.

4. The method for treating an oxide film on a wafer surface according to claim 3, characterized in that: The indicator includes pure water.

5. The method for treating an oxide film on a wafer surface according to claim 3, characterized in that: The volume range of the indicator is 0.05ml to 5.0ml.

6. The method for treating an oxide film on a wafer surface according to claim 3, characterized in that: The height monitoring device comprises a laser height measurer.

7. The method for treating an oxide film on a wafer surface according to claim 6, wherein: The laser height measuring device includes a laser and a laser receiver. The laser receiver is located at the intersection of the optical path of the laser and the edge of the supporting platform. The laser and the laser receiver can move up and down.

8. The method for treating an oxide film on a wafer surface according to claim 7, wherein: The indicator is located in the optical path of the laser.

9. The method for treating an oxide film on a wafer surface according to claim 3, characterized in that: The etchant gas includes hydrofluoric acid gas.

10. The method for treating an oxide film on a wafer surface according to claim 3, characterized in that: The wafer surface oxide film processing device also includes a data processing unit and a display unit. The data processing unit receives and processes the measurement data of the height monitoring device in real time, and the display unit displays the processing results of the measurement data of the height monitoring device in real time.

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