Wafer compression ring structure and wafer deposition device

Abstract

The invention relates to the technical field of wafer deposition devices, in particular to a wafer compression ring structure and a wafer deposition device. The wafer compression ring structure comprises a compression ring body which is used for pressing the periphery of a wafer on a carrying table, and is characterized in that a bearing ring body is arranged above the compression ring body, a gap is reserved between the compression ring body and the bearing ring body, the bearing ring body shields the top surface of the compression ring body, and the top surface of the compression ring body is covered with the bearing ring body. And the inner circle edge of the bearing ring body is turned outwards along the direction opposite to the compression ring body, the wafer compression ring structure can effectively prevent the problem that the compression ring and the wafer are bonded in the deposition process, and the wafer compression ring structure has the advantages of simple structure and low cost.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer deposition devices, and in particular to a wafer pressure ring structure and a wafer deposition device. Background Art

[0002] In the existing semiconductor manufacturing process, physical vapor deposition equipment is often used to deposit metal on the surface of the wafer. The deposited metal layer serves as a contact layer to form the metal electrode required in the chip manufacturing process.

[0003] During the metal deposition process, except for the wafer itself, other parts of the wafer cavity will be covered by shield-shaped metal spare parts to prevent the cavity body from being deposited with metal. The spare part that mainly protects the wafer is called a pressure ring.

[0004] In actual production, when thick metal is deposited on a wafer, higher power and longer time are usually required, and the temperature of the wafer surface will continue to rise. Figure 1 At high temperatures, the metal deposited on the surface of the pressure ring gradually melts and flows, and then deposits on the contact area between the wafer and the edge of the pressure ring to bond the wafer and the pressure ring. When the metal deposition is completed, the carrier used to carry the wafer descends, and the wafer is stuck to the pressure ring and cannot descend with the carrier platform. The wafer that is bonded and hung up will fall and break later, or it is easy to collide with the wafer when the arm is extended into the deposition chamber to take the wafer, resulting in scratches or damage to the wafer, as well as machine downtime, production capacity loss and product scrapping.

[0005] At present, there are improvements to the pressure ring structure to avoid the pressure ring structure from bonding with the wafer. Currently, the inner edge of the pressure ring is set as an inclined surface so that the molten metal deposited on the pressure ring can be unloaded to the surface of the wafer without gathering on the pressure ring, thereby avoiding the pressure ring and the wafer from bonding. However, after high temperature and long-term deposition work, more molten metal will also accumulate on the surface of the pressure ring and bond with the wafer.

[0006] In addition, the middle of the pressure ring is set as a hollow structure, and a coolant is passed into the hollow structure to reduce the temperature of the pressure ring to prevent the metal on the pressure ring from melting and sticking. However, the relevant cooling channel is only set on the pressure ring body, and the pressure ring body itself is close to the wafer. The temperature on the pressure ring body is inevitably affected by the wafer temperature. Especially when depositing a thicker metal layer, the cooling effect is limited. Summary of the invention

[0007] The purpose of the present invention is to avoid the deficiencies in the prior art and provide a wafer pressure ring structure, which can effectively prevent the problem of adhesion between the pressure ring and the wafer during the deposition process, and the wafer pressure ring structure has the advantages of simple structure and low cost.

[0008] To achieve the above object, the present invention provides the following technical solutions:

[0009] A wafer pressure ring structure is provided, including a pressure ring body, wherein the pressure ring body is used to press the periphery of the wafer on the carrier, and is characterized in that a supporting ring body is provided above the pressure ring body, a spacing is left between the pressure ring body and the supporting ring body, the supporting ring body blocks the top surface of the pressure ring body, and a concave surface is provided on the surface of the supporting ring body facing away from the pressure ring body.

[0010] The pressing ring body is directly pressed onto the wafer on the stage, so that the wafer can be stably attached to the stage. The supporting ring body is arranged above the pressing ring body, which can effectively shield the pressing ring body, so that the metal deposits are deposited on the supporting ring body but not on the pressing ring body, and the inner circle side of the supporting ring body is turned outward, which can prevent the metal deposits from flowing onto the wafer and causing the pressing ring structure to adhere to the wafer.

[0011] In some embodiments, the concave surface includes a grooved surface and / or a corrugated surface.

[0012] The surface of the support ring body facing away from the pressure ring body is configured as a groove surface or a corrugated surface to form a better support groove, so that the metal deposits can be stably located in the groove surface or the corrugated surface without flowing, thereby avoiding the problem of the metal deposits flowing and adhering to the wafer. In addition, the groove surface or the corrugated surface can better lock the metal deposits.

[0013] In some embodiments, a protrusion is provided on the side of the pressure ring body close to the carrier, the pressure ring body is pressed against the periphery of the wafer through the protrusion, and the protrusion and the side of the pressure ring body form a step surface, and the step surface faces the carrier.

[0014] The side of the pressure ring body close to the carrier is used for pressing with the wafer, so a protrusion is provided on the side. The protrusion can make the pressure ring body and the wafer have only a small contact area, effectively preventing the pressure ring body from bonding with the wafer due to the large contact area with the wafer. In addition, the protrusion can form a step surface facing the carrier with the side of the pressure ring body. The step surface can play a shielding role, effectively reducing the metal deposition at the contact point between the pressure ring body and the wafer, which is beneficial to reduce the probability of bonding between the pressure ring body and the carrier.

[0015] In some embodiments, the inner circular side edge of the pressure ring body is tilted toward one side of the wafer.

[0016] Since the inner circular side of the pressure ring body is tilted toward one side of the wafer, if metal deposits are deposited on the pressure ring body, they will also be unloaded onto the wafer through the tilted surface, avoiding the problem of deposition on the pressure ring body causing the pressure ring body and the wafer to adhere to each other.

[0017] Preferably, the inner circular side of the pressure ring body is inclined toward one side of the wafer to form a lake surface, and the inner edges of the main pressure ring and the supporting ring body are designed to be arc surfaces, which effectively reduces the atomic collision force during the metal deposition process, thereby reducing particles.

[0018] In some embodiments, the relationship between the diameter H of the wafer, the outer diameter D of the concave surface, and the inner diameter d of the concave surface is as follows:

[0019] d≤H±2mm, D≤d+200mm.

[0020] This range enables the concave surface to better shield the periphery of the wafer, so that metal deposits do not fall down.

[0021] In some embodiments, the pressure ring body and the opposite surfaces of the support ring body are sealed and connected to form a heat exchange cavity, and the heat exchange cavity is filled with a coolant.

[0022] The pressure ring body and the supporting ring body are sealed, and a coolant can be filled in the heat exchange cavity, so that both the pressure ring body and the supporting ring body can be cooled by the coolant. The heat exchange cavity is arranged between the pressure ring body and the supporting ring body, which can effectively avoid cooling only the pressure ring body. That is, although the concave surface on the supporting ring body is not easy to flow to the wafer due to the stability of the concave surface, the metal deposits on the supporting ring body are reduced in melting under the cooling effect of the coolant, further avoiding the problem of bonding.

[0023] In some embodiments, a cooling channel is further provided in the supporting ring body and / or in the pressing ring body.

[0024] Since the pressing ring body and the supporting ring body are two ring bodies, and the pressing ring body is actually a traditional pressing ring body, a cooling channel can be opened on the pressing ring body to ensure the cooling effect of the entire pressing ring structure.

[0025] In some embodiments, the coolant is a liquid coolant or a gas coolant.

[0026] In some embodiments, the liquid coolant includes industrial cooling water, ethylene glycol or deionized water. In practical applications, other liquid coolants may also be used.

[0027] In some embodiments, the gas coolant includes argon, helium or nitrogen. In practical applications, other gas coolants may also be used.

[0028] In some embodiments, the gas coolant has a pressure of 20 psi to 60 psi in the heat exchange cavity, and a gas flow rate of 10 sccm to 50 sccm.

[0029] When using a gas coolant, in order to avoid displacement of the pressure ring structure, the gas pressure and gas flow rate of the gas coolant need to be limited.

[0030] In some embodiments, the pressure ring body is provided with an opening for coolant to enter the heat exchange cavity.

[0031] The opening can facilitate the passage of coolant.

[0032] Beneficial effects of a wafer pressure ring structure of the present invention:

[0033] (1) The wafer pressure ring structure of the present invention has a supporting ring body additionally provided outside the pressure ring body. The supporting ring body shields the pressure ring body so as to support the deposited metal deposited on the pressure ring. Since the pressure ring body itself has a heat insulation effect and the supporting ring body has its own heat insulation effect, the heat insulation effect of the entire pressure ring structure is effectively improved, thereby preventing the metal deposits on the supporting ring body from melting at high temperature and flowing to the lower pressure ring so as to contact the wafer and cause wafer sticking. In addition, a concave surface is provided on the surface of the supporting ring body facing away from the pressure ring body, so that the upper surface of the supporting ring body forms a concave surface that can lock the metal deposits, thereby preventing the metal deposits on the supporting ring body from flowing to the wafer. At the same time, the concave surface allows the metal deposits to accumulate upwards, thereby effectively preventing the metal deposits on the supporting ring body from continuously contacting the wafer and causing wafer sticking.

[0034] (2) The wafer pressure ring structure of the present invention effectively reduces the temperature of the contact area between the wafer and the pressure ring.

[0035] (3) The wafer pressure ring structure of the present invention improves the risk of wafer sticking caused by the metal deposition thick film pressure ring, effectively reduces the probability of wafer sticking and wafer breakage, and greatly reduces the losses caused by wafer sticking, such as cavity contamination, machine downtime, production capacity loss, and product scrapping.

[0036] A wafer deposition device is also provided, comprising a carrier, wherein the carrier is used to place a wafer on which metal is to be deposited, and the carrier is provided with the above-mentioned wafer pressure ring structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 It is a structural schematic diagram of a traditional wafer pressure ring structure.

[0038] Figure 2 It is a structural schematic diagram of a wafer pressure ring structure according to an embodiment of the present invention.

[0039] Figure 3 4 is a bottom view of the wafer pressure ring structure according to an embodiment of the present invention.

[0040] Figure 4 4 is a top view of the wafer pressure ring structure according to an embodiment of the present invention.

[0041] Figure 54 is a working state diagram of a wafer deposition device according to an embodiment of the present invention.

[0042] Reference numerals

[0043] 1. Pressure ring body; 2. Wafer; 3. Carrier; 4. Concave surface; 5. Protrusion; 6. Step surface; 7. Heat exchange cavity; 8. Orifice; 9. Cavity shielding; 10. Support ring body. DETAILED DESCRIPTION

[0044] The preferred embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although the preferred embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to make the present invention more thorough and complete, and to fully convey the scope of the present invention to those skilled in the art.

[0045] The terms used in the present invention are only for the purpose of describing specific implementation regulations, and are not intended to limit the present invention. The singular forms "a", "the" used in the present invention and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used in this article refers to and includes any or all possible combinations of one or more associated listed items.

[0046] It should be understood that although the terms "first", "second", "third", etc. may be used to describe various information in the present invention, such information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present invention, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0047] Example 1

[0048] At present, there are improvements to the pressure ring structure to prevent the pressure ring structure from bonding with the wafer 2. Currently, the inner edge of the pressure ring is set as an inclined surface so that the molten metal deposited on the pressure ring can be unloaded onto the surface of the wafer 2 without gathering on the pressure ring, thereby preventing the pressure ring from bonding with the wafer 2. However, after high temperature and long-term deposition work, more molten metal will also accumulate on the surface of the pressure ring and bond with the wafer 2.

[0049] In addition, the middle of the pressure ring is set as a hollow structure, and a coolant is passed into the hollow structure to reduce the temperature of the pressure ring to prevent the metal on the pressure ring from melting and bonding. However, the relevant cooling channel is only set on the pressure ring body 1, and the pressure ring body 1 itself is close to the wafer 2. The temperature on the pressure ring body 1 is inevitably affected by the temperature of the wafer 2. Especially when depositing a thicker metal layer, the cooling effect is limited.

[0050] For this technical question, please refer to Figure 2 The present embodiment discloses a wafer 2 pressure ring structure, including a pressure ring body 1, wherein the pressure ring body 1 is used to press the periphery of the wafer 2 on the carrier 3, and a supporting ring body 10 is provided above the pressure ring body 1, and a spacing is left between the pressure ring body 1 and the supporting ring body 10, and the supporting ring body 10 blocks the top surface of the pressure ring body 1, and the inner circle edge of the supporting ring body 10 is turned outward along the direction away from the pressure ring body 1.

[0051] The pressing ring body 1 is directly pressed onto the wafer 2 on the stage 3, so that the wafer 2 can be stably attached to the stage 3. The supporting ring body 10 is arranged above the pressing ring body 1, which can effectively shield the pressing ring body 1, so that the metal deposits are deposited on the supporting ring body 10 but not on the pressing ring body 1, and the inner circle side of the supporting ring body 10 is turned outward, which can prevent the metal deposits from flowing onto the wafer 2, causing the pressing ring structure to adhere to the wafer 2.

[0052] The wafer 2 pressure ring structure of the present invention is further provided with a supporting ring body 10 outside the pressure ring body 1. The supporting ring body 10 shields the pressure ring body 1 so as to support the deposited metal deposited on the pressure ring. Since the pressure ring body 1 itself has a heat insulation effect and the supporting ring body 10 has its own heat insulation effect, the heat insulation effect of the entire pressure ring structure is effectively improved, and the metal deposits on the supporting ring body 10 are prevented from melting at high temperature and flowing to the lower pressure ring, thereby preventing the contact with the wafer 2 and causing adhesion. In addition, the surface of the supporting ring body 10 facing away from the pressure ring body is set as a concave surface, so that the upper surface of the supporting ring body 10 forms a surface that can lock the metal deposits, preventing the metal deposits on the supporting ring body 10 from flowing to the wafer 2. At the same time, the outward-turned portion allows the metal deposits to accumulate upwards, which can effectively prevent the metal deposits on the supporting ring body 10 from continuously contacting the wafer 2 and causing the wafer 2 to stick.

[0053] Example 2

[0054] Since the metal deposits are still easy to move on the surface of the supporting ring 10, in order to solve this problem, based on Example 1, refer to Figure 2 This embodiment discloses that the surface of the supporting ring body 10 facing away from the pressure ring body 1 is constructed as a grooved surface or a corrugated surface, and the grooved surface causes the inner circular edge of the supporting ring body 10 to be turned outward.

[0055] The surface of the support ring body 10 facing away from the pressure ring body 1 is constructed as a groove surface or a corrugated surface, which forms a good support groove, so that the metal deposit can be stably located in the groove surface or the corrugated surface without flowing, thereby avoiding the problem of the metal deposit flowing and bonding with the wafer 2. In addition, the groove surface or the corrugated surface can better lock the metal deposit.

[0056] Specifically,

[0057] The surface of the support ring body 10 facing away from the pressure ring body 1 is designed as a groove surface or a corrugated surface, which helps to form a better support groove for stably supporting metal deposits.

[0058] The design of the grooved surface or the corrugated surface allows the metal deposit to be stably located in the grooved surface, reducing the problem of adhesion to the wafer 2 due to flow. This surface structure can better lock the metal deposit and prevent it from moving due to vibration or other factors during the process, thereby avoiding contact with the wafer 2.

[0059] Example 3

[0060] Since the pressing ring body 1 is pressed on the surface of the wafer 2, it will not prevent the contact with the metal deposits on the wafer 2, and the pressing ring structure and the wafer 2 still have the problem of pressing and bonding. To solve this problem, based on Example 2, refer to Figure 2 This embodiment discloses that a protrusion 5 is provided on the side of the pressure ring body 1 close to the carrier 3, the pressure ring body 1 is pressed against the periphery of the wafer 2 through the protrusion 5, and the protrusion 5 and the side of the pressure ring body 1 form a step surface 6, and the step surface 6 faces the carrier 3.

[0061] The side of the pressure ring body 1 close to the carrier 3 is used for pressing with the wafer 2, so a protrusion 5 is set on the side. The protrusion 5 can make the pressure ring body 1 and the wafer 2 have only a small contact area, effectively preventing the pressure ring body 1 from bonding with the wafer 2 due to the large contact area with the wafer 2. In addition, the protrusion 5 can form a step surface 6 facing the carrier 3 with the side of the pressure ring body 1. The step surface 6 can play a shielding role, effectively reducing the metal deposition at the contact point between the pressure ring body 1 and the wafer 2, which is beneficial to reducing the probability of bonding between the pressure ring body 1 and the carrier 3.

[0062] Specifically,

[0063] A protrusion 5 is provided on the side of the pressure ring body 1 close to the carrier 3, and the protrusion 5 is used to press fit with the periphery of the wafer 2. By providing the protrusion 5, the contact area between the pressure ring body 1 and the wafer 2 is effectively reduced. This can reduce the bonding problem between the pressure ring body 1 and the wafer 2 caused by the large contact area. The protrusion 5 and the side of the pressure ring body 1 together form a step surface 6 facing the carrier 3. The design of this step surface 6 helps to shield metal deposits and reduce the possibility of their direct deposition in the contact area between the pressure ring body 1 and the wafer 2. The design of the step surface 6 effectively reduces the metal deposition at the contact point between the pressure ring body 1 and the wafer 2, thereby reducing the probability of bonding between the pressure ring body 1 and the carrier 3. By reducing unnecessary metal deposition, the risk of wafer 2 sticking is reduced, and the stability and yield of the production process are improved.

[0064] The design of the protrusion 5 may also enhance the structural stability of the pressure ring body 1 because it provides a clear pressing point, which helps to evenly distribute the pressure and reduce the damage to the wafer 2 caused by uneven pressure.

[0065] In this embodiment, the inner circular side edge of the pressure ring body 1 is tilted toward one side of the wafer 2 .

[0066] Since the inner circular side edge of the pressure ring body 1 is tilted toward one side of the wafer 2, if metal deposits are deposited on the pressure ring body 1, they will also be unloaded onto the wafer 2 through the tilted surface, avoiding the problem of deposition on the pressure ring body 1 causing the pressure ring body 1 and the wafer 2 to adhere to each other.

[0067] Preferably, the inclined surface is an inclined surface with an arc, which can buffer the tilting speed.

[0068] Specifically,

[0069] The inner circular side of the pressing ring body 1 is designed to be inclined toward the side of the wafer 2. This design helps the metal deposit to be transferred from the pressing ring body 1 to the wafer 2 instead of being deposited on the pressing ring body 1, thereby avoiding the bonding problem between the pressing ring body 1 and the wafer 2.

[0070] Through the inclined design, metal deposits are more inclined to slide onto the wafer 2 along the inclined surface during the deposition process, rather than staying on the pressure ring body 1, which helps to reduce direct contact between the pressure ring body 1 and the wafer 2 and reduce the risk of bonding.

[0071] The inclined surface is designed to be an inclined surface with a curvature. This design can provide a smoother transition, buffer the sliding speed of the metal deposit, and reduce uneven deposition or impact on the wafer 2 that may be caused by rapid sliding.

[0072] Improve stability and uniformity: The inner edges of the main body pressure ring and the supporting ring are designed to be arc surfaces, which effectively reduce the atomic collision force during the metal deposition process, thereby reducing particles.

[0073] Example 4

[0074] In order to prevent the supporting ring 10 from affecting the metal deposition on the wafer 2, in order to solve this problem, based on the embodiment 3, refer to Figures 3-4 , this embodiment discloses that the relationship between the diameter H of the wafer 2 and the outer diameter D of the concave surface and the inner diameter d of the concave surface is as follows:

[0075] d≤H±2mm, D≤d+200mm.

[0076] This range enables the concave surface to better shield the periphery of the wafer, so that metal deposits do not fall down.

[0077] Example 5

[0078] In order to improve the cooling effect of the pressure ring structure and achieve the maximum cooling effect, in order to solve this problem, based on the above embodiment, refer to Figure 5 This embodiment discloses that the pressure ring body 1 and the opposite surfaces of the supporting ring body 10 are sealed and connected to form a heat exchange cavity 7, and the heat exchange cavity 7 is filled with a coolant.

[0079] The pressure ring body 1 and the supporting ring body 10 are sealed, and the coolant can be filled in the heat exchange cavity 7, so that both the pressure ring body 1 and the supporting ring body 10 can be cooled by the coolant. The heat exchange cavity 7 is arranged between the pressure ring body 1 and the supporting ring body 10, which can effectively avoid cooling only the pressure ring body 1. That is, although the concave surface 4 on the supporting ring body 10 is not easy to flow to the wafer 2 due to the stability of the concave surface 4, the metal deposits on the supporting ring body 10 are reduced in melting under the cooling effect of the coolant, further avoiding the problem of bonding.

[0080] Specifically,

[0081] The opposing surfaces of the pressure ring body 1 and the supporting ring body 10 are sealed to form a heat exchange cavity 7. This sealing design ensures that the coolant can be retained in the heat exchange cavity 7, while preventing the external environment from affecting the cooling system.

[0082] The heat exchange cavity 7 formed between the pressure ring body 1 and the support ring body 10 is used to be filled with a coolant. The design of this cavity allows the coolant to cool the pressure ring body 1 and the support ring body 10 simultaneously.

[0083] The coolant is filled in the heat exchange cavity 7, which can effectively cool the pressing ring body 1 and the supporting ring body 10. This design avoids the situation where only the pressing ring body 1 is cooled, and ensures the temperature control of the entire pressing ring structure.

[0084] Due to the design of the concave surface 4 on the support ring 10, the metal deposits are not easy to flow to the wafer 2. Under the cooling effect of the coolant, the melting of the metal deposits on the support ring 10 is reduced, further avoiding the problem of the metal deposits and the wafer 2 being bonded.

[0085] Through effective cooling, the melting and flow of metal deposits caused by high temperatures can be reduced, thereby improving the stability and yield of the semiconductor manufacturing process.

[0086] The design of the heat exchange chamber 7 allows for precise temperature control of the pressure ring body 1 and the support ring body 10, which is critical to maintaining accuracy and consistency during semiconductor manufacturing.

[0087] In this embodiment, a cooling channel is further provided in the supporting ring body 10 and / or in the pressing ring body 1 .

[0088] Since the pressure ring body 1 and the supporting ring body 10 are two ring bodies, and the pressure ring body 1 is substantially a traditional pressure ring body 1, a cooling channel can be opened on the pressure ring body 1 or the supporting ring body 10 to ensure the cooling effect of the entire pressure ring structure.

[0089] Specifically,

[0090] A cooling channel is provided in the support ring body 10, which helps to directly cool the support ring body 10. Similarly, a cooling channel can also be provided on the pressure ring body 1 to ensure the cooling effect of the entire pressure ring structure. By providing cooling channels in both the pressure ring body 1 and the support ring body 10, a dual cooling effect can be provided to ensure that the temperature of both rings can be effectively controlled. This helps to achieve a more uniform temperature distribution in the entire pressure ring structure and reduce process problems caused by local overheating.

[0091] Effective cooling can reduce the melting and flow of metal deposits and reduce the risk of wafer 2 sticking, thereby improving production efficiency and product quality.

[0092] In this embodiment, the coolant is a liquid coolant or a gas coolant.

[0093] In this embodiment, the liquid coolant includes industrial cooling water, ethylene glycol or deionized water. In practical applications, it can also be other liquid coolants.

[0094] In this embodiment, the gas coolant includes argon, helium or nitrogen. In practical applications, other gas coolants may also be used.

[0095] In this embodiment, the gas pressure of the gas coolant in the heat exchange cavity 7 is 20 psi to 60 psi, and the gas flow rate is 10 sccm to 50 sccm.

[0096] When the gas pressure or flow rate is high, the pressure ring may be offset, affecting the metal deposition process or the indentation on the surface of the wafer 2, causing process abnormality. To avoid the pressure ring structure offset, the gas pressure and gas flow rate of the gas coolant need to be limited.

[0097] Specifically,

[0098] The control of the pressure and flow rate of the gas coolant is crucial because they directly affect the stability of the pressure ring structure and the accuracy of the metal deposition process. The pressure of the gas coolant in the heat exchange chamber 7 is controlled between 20psi and 60psi, and the gas flow rate is controlled between 10sccm and 50sccm. This control is necessary because excessive pressure or flow rate may cause the pressure ring to deviate, affecting the metal deposition process or the indentation on the surface of the wafer 2, thereby causing process abnormalities.

[0099] In order to prevent the pressure ring structure from shifting due to excessive gas pressure and flow of the gas coolant, the gas pressure and flow of the gas coolant need to be limited. This is because excessive gas pressure or flow may generate additional force on the pressure ring structure, causing its position to shift, which in turn affects the stability and accuracy of the entire semiconductor manufacturing process. Selection of gas coolant: In practical applications, the gas coolant can be argon, helium or nitrogen, etc. These gases usually have good thermal conductivity and chemical stability, and are suitable for cooling in the semiconductor manufacturing process.

[0100] The gas pressure and flow rate of the gas coolant are two adjustable and measurable intuitive parameters that can be adjusted according to specific process requirements. By adjusting these two parameters, the cooling effect can be optimized to ensure temperature control of the pressure ring structure and the wafer 2 during the metal deposition process.

[0101] In this embodiment, the pressure ring body 1 is provided with a hole 8 for the coolant to enter the heat exchange cavity 7 .

[0102] The orifice 8 can facilitate the passage of coolant. The orifice 8 is connected to a bellows. Preferably, the orifice 8 is arranged on the bottom surface of the pressure ring body 1, so that metal deposits can be prevented from clogging the orifice 8. More specifically, two orifices 8 are provided, which are used to input coolant and output coolant respectively, so as to realize cooling circulation and maintain cooling effect. Swagelok joints are commonly used to connect the orifice 8 to the inlet bellows and the outlet bellows respectively.

[0103] Example 5

[0104] To further illustrate the use of the wafer 2 pressure ring structure in wafer 2 deposition, this embodiment discloses

[0105] The wafer 2 deposition device comprises a carrier 3, wherein the carrier 3 is used to place the wafer 2 on which metal is to be deposited. The wafer 2 is provided with a pressure ring structure on the carrier 3, and a cavity shield 9 is provided on the periphery of the pressure ring structure.

[0106] The use process of wafer 2 deposition device:

[0107] When the carrier 3 is raised, the wafer 2 is lifted to contact the pressure ring body 1, and rises together with the supporting ring body 10 to separate from the cavity shielding 9 and rise to the metal deposition height; after the metal deposition is completed, the carrier 3 lowers the wafer 2 and the pressure ring structure to the cavity shielding 9, and the cavity shielding 9 supports the pressure ring body 1 of the pressure ring structure. The wafer 2 continues to descend and separates from the pressure ring body 1. As the wafer 2 continues to descend, it will be supported by the four support columns in the center of the carrier 3 and separate from the carrier 3.

[0108] Specifically,

[0109] The carrier 3 is used to place the wafer 2 on which the metal is to be deposited.

[0110] The wafer 2 pressing ring structure is located on the carrier 3 and is used for pressing the wafer 2 .

[0111] Cavity screen: Located on the periphery of the pressure ring structure, it is used to provide support and protection during the deposition process.

[0112] Usage process:

[0113] When the carrier platform 3 rises, the wafer 2 rises accordingly and contacts the pressure ring body 1 , and at the same time, the supporting ring body 10 also rises and separates from the cavity shield 9 .

[0114] The wafer 2 and the pressure ring structure are raised together to a height suitable for metal deposition.

[0115] After the metal deposition is completed, the carrier 3 lowers the wafer 2 together with the pressure ring structure and returns to the position of the cavity shield 9 .

[0116] The cavity shield 9 at this time plays a role in supporting the pressure ring body 1 to ensure structural stability.

[0117] The wafer 2 continues to descend and separates from the pressure ring body 1 .

[0118] As the wafer 2 further descends, the wafer 2 will be supported by the four support pillars at the center of the carrier platform 3 , thereby completely separating from the carrier platform 3 .

[0119] By precisely controlling the lifting of the carrier 3, the contact and separation process between the wafer 2 and the pressure ring body 1 is ensured to be accurate. The cavity shield 9 not only provides protection for the pressure ring structure during the deposition process, but also provides necessary support to ensure the stability of the pressure ring structure. By using the cavity shield 9, the possible contamination of the wafer 2 during the metal deposition process can be reduced. Improve efficiency: During the whole process, the lifting and separation process of the wafer 2 are precisely controlled, which helps to improve the efficiency and quality of the deposition of the wafer 2.

[0120] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps described in these embodiments do not limit the scope of the present application. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the drawings are not drawn according to the actual proportional relationship. The technology, methods and equipment known to ordinary technicians in the relevant field may not be discussed in detail, but in appropriate cases, the technology, methods and equipment should be regarded as a part of the authorization specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0121] In the description of the present application, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction, and therefore cannot be understood as limiting the scope of protection of the present application; the directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0122] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0123] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of this application.

[0124] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A wafer pressing ring structure, comprising a pressing ring body (1), wherein the pressing ring body (1) is used to press the periphery of a wafer (2) on a carrier (3), characterized in that: A supporting ring body (10) is provided above the pressure ring body (1), a distance is left between the pressure ring body (1) and the supporting ring body (10), the supporting ring body (10) covers the top surface of the pressure ring body (1), and a concave surface is provided on the surface of the supporting ring body (10) facing away from the pressure ring body (1).

2. The wafer pressure ring structure according to claim 1, characterized in that: The concave surface includes a groove surface and / or a corrugated surface.

3. The wafer pressure ring structure according to claim 1, characterized in that: A protrusion (5) is provided on the side of the pressure ring body (1) close to the carrier (3), and the pressure ring body (1) is pressed against the periphery of the wafer (2) through the protrusion (5), and the protrusion (5) and the side of the pressure ring body (1) form a step surface (6), and the step surface (6) faces the carrier (3).

4. The wafer pressure ring structure according to claim 3, characterized in that: The inner circular side edge of the pressure ring body (1) is arranged to be inclined toward one side of the wafer (2).

5. The wafer pressure ring structure according to claim 1, characterized in that: The relationship between the diameter H of the wafer (2), the outer diameter D of the concave surface, and the inner diameter d of the concave surface is as follows: d≤H±2mm, D≤d+200mm.

6. The wafer pressure ring structure according to claim 1, characterized in that: The opposing surfaces of the pressure ring body (1) and the supporting ring body (10) are sealed and connected to form a heat exchange cavity (7), and the heat exchange cavity (7) is filled with a coolant.

7. The wafer pressure ring structure according to claim 6, characterized in that: A cooling channel is also provided in the supporting ring body (10) and / or in the pressing ring body (1).

8. The wafer pressure ring structure according to claim 6, characterized in that: The coolant is a liquid coolant or a gas coolant.

9. The wafer pressure ring structure according to claim 8, characterized in that: The liquid coolant includes industrial cooling water, ethylene glycol or deionized water.

10. The wafer pressure ring structure according to claim 8, characterized in that: The gas coolant includes argon, helium or nitrogen.

11. The wafer pressure ring structure according to claim 10, characterized in that: The gas pressure of the gas coolant in the heat exchange cavity (7) is 20 psi to 60 psi, and the gas flow rate is 10 sccm to 50 sccm.

12. The wafer pressure ring structure according to claim 6, characterized in that: The pressure ring body (1) is provided with an orifice (8) for coolant to enter the heat exchange cavity (7) and an orifice (8) for coolant to exit the heat exchange cavity (7).

13. A wafer deposition device, characterized in that: The invention comprises a carrier (3), the carrier (3) being used to place a wafer (2) on which a metal is to be deposited, and the carrier (3) is provided with a wafer pressure ring structure as claimed in any one of claims 1 to 12.

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