Ceramic substrate copper plating method

Abstract

The invention discloses a ceramic substrate copper plating method, and relates to the technical field of ceramic substrate copper plating. The method comprises the following steps: S100, forming a circuit pattern on a ceramic substrate; s200, a grinding needle is used for grinding along the formed circuit pattern, and a rough surface is formed on the inner wall of the circuit pattern; s300, after the ceramic substrate is subjected to activation soaking treatment, copper foil brazing is carried out; s400, etching is carried out on the ceramic substrate; the purposes that copper is directly plated on the low-cost ceramic substrate, and the binding property of a plating layer and the ceramic substrate is good are achieved.

Description

Technical Field

[0001] The invention relates to the technical field of ceramic-based copper plating, in particular to a ceramic substrate copper plating method. Background Art

[0002] DPC technology, i.e. direct copper plating on ceramic substrates, is an advanced process that combines semiconductor micromachining technology and printed circuit board (PCB) preparation technology, and has the following characteristics: Process flow: The preparation of DPC ceramic substrates usually includes pre-treatment, sputtering coating, photolithography development, electroplating hole filling, surface grinding and etching. First, a Ti / Cu layer is deposited on the surface of the ceramic substrate as a seed layer by vacuum sputtering, then the circuit pattern is made using photoresist, and finally the circuit thickness is increased by electroplating or chemical plating.

[0003] It has the characteristics of high precision and high thermal conductivity. The DPC substrate adopts a thin film process, which can achieve a line width design of 10~50μm, and realizes vertical interconnection through laser drilling and electroplating hole filling technology, which is suitable for high-precision electronic device packaging. At the same time, it can be prepared at low temperature, and the DPC process is completed below 300℃, avoiding the adverse effects of high temperature on materials and circuit structures, while reducing production costs. In addition, the finished substrate also has excellent mechanical properties and reliability. The DPC substrate has good thermal cycling performance, shape stability and high thermal conductivity, and is suitable for the packaging of high-temperature and high-current devices.

[0004] Ceramic substrate copper plating technology has significant technical advantages and broad application prospects, but its bonding strength and cost control are still areas that need further research and improvement. Summary of the invention

[0005] The object of the present invention is to provide a method for copper plating on a ceramic substrate, so as to achieve low-cost direct copper plating on the ceramic substrate and ensure good bonding between the plating layer and the ceramic substrate.

[0006] In order to achieve the above object, the present invention adopts the following technical means: A method for copper plating a ceramic substrate comprises the following steps: S100. Forming a circuit pattern on a ceramic substrate; S200. Grinding along the formed circuit pattern using a grinding needle to form a rough surface on the inner wall of the circuit pattern; S300. After the ceramic substrate is activated and soaked, the copper foil is brazed; S400. Etching the ceramic substrate.

[0007] Furthermore, the step S100 includes: S110. Using a laser beam to perform a first scan on the entire surface of the ceramic substrate; S120. Perform a second scan to form a circuit pattern on the ceramic substrate using the second scan; S130. Finally, a third scan is performed along the direction of the line pattern, with the same parameters as the first scan.

[0008] Preferably, the power of the first scan and the third scan is 5-10W, and the power of the second scan is 15-20W. Furthermore, in the step S200, the lower end and the side wall of the grinding needle are configured as rough surfaces, and the roughness of the grinding needle is 100-200 meshes.

[0009] Furthermore, in step S300, the activation solution is a colloidal palladium activation solution, and the colloidal palladium activation solution is composed of 30-40% tin chloride and 60-70% palladium chloride.

[0010] Furthermore, in step S400, the etching solution is cupric chloride etching solution.

[0011] During use, the present invention has the following beneficial effects: After forming the circuit pattern on the ceramic substrate, the inner wall of the circuit pattern is roughened by using a grinding needle. In this way, during the subsequent activation, the inner wall of the circuit pattern can be combined with more activation sites. When brazing the copper foil, the copper layer can not only ensure uniform thickness coverage, but also better bonding between the copper layer and the inner wall of the circuit pattern, and the copper layer and the ceramic substrate have excellent bonding performance. DETAILED DESCRIPTION

[0012] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in combination with the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments.

[0013] Therefore, the following detailed description of the embodiments of the present invention is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0014] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features of the embodiments may be combined with each other.

[0015] Example 1 A method for copper plating a ceramic substrate comprises the following steps: S100. Forming a circuit pattern on a ceramic substrate; S200. Grinding along the formed circuit pattern using a grinding needle to form a rough surface on the inner wall of the circuit pattern; S300. After the ceramic substrate is activated and soaked, the copper foil is brazed; S400. Etching the ceramic substrate.

[0016] Furthermore, the step S100 includes: S110. Using a laser beam to perform a first scan on the entire surface of the ceramic substrate; S120. Perform a second scan to form a circuit pattern on the ceramic substrate using the second scan; S130. Finally, a third scan is performed along the direction of the line pattern, with the same parameters as the first scan.

[0017] Preferably, the power of the first scan and the third scan is 5W, and the power of the second scan is 15W. Furthermore, in the step S200, the lower end and the side wall of the grinding needle are configured as rough surfaces, and the roughness of the grinding needle is 100-200 meshes.

[0018] Furthermore, in step S300, the activation solution is a colloidal palladium activation solution, and the colloidal palladium activation solution is composed of 30-40% tin chloride and 60-70% palladium chloride.

[0019] Furthermore, in step S400, the etching solution is cupric chloride etching solution.

[0020] During use, the present invention has the following beneficial effects: After forming the circuit pattern on the ceramic substrate, the inner wall of the circuit pattern is roughened by using a grinding needle. In this way, during the subsequent activation, the inner wall of the circuit pattern can be combined with more activation sites. When brazing the copper foil, the copper layer can not only ensure uniform thickness coverage, but also better bonding between the copper layer and the inner wall of the circuit pattern, and the copper layer and the ceramic substrate have excellent bonding performance.

[0021] Example 2 A method for copper plating a ceramic substrate comprises the following steps: S100. Forming a circuit pattern on a ceramic substrate; S200. Grinding along the formed circuit pattern using a grinding needle to form a rough surface on the inner wall of the circuit pattern; S300. After the ceramic substrate is activated and soaked, the copper foil is brazed; S400. Etching the ceramic substrate.

[0022] Furthermore, the step S100 includes: S110. Using a laser beam to perform a first scan on the entire surface of the ceramic substrate; S120. Perform a second scan to form a circuit pattern on the ceramic substrate using the second scan; S130. Finally, a third scan is performed along the direction of the line pattern, with the same parameters as the first scan.

[0023] Preferably, the power of the first scan and the third scan is 7W, and the power of the second scan is 18W. Furthermore, in the step S200, the lower end and the side wall of the grinding needle are configured as rough surfaces, and the roughness of the grinding needle is 100-200 meshes.

[0024] Furthermore, in step S300, the activation solution is a colloidal palladium activation solution, and the colloidal palladium activation solution is composed of 30-40% tin chloride and 60-70% palladium chloride.

[0025] Furthermore, in step S400, the etching solution is cupric chloride etching solution.

[0026] During use, the present invention has the following beneficial effects: After forming the circuit pattern on the ceramic substrate, the inner wall of the circuit pattern is roughened by using a grinding needle. In this way, during the subsequent activation, the inner wall of the circuit pattern can be combined with more activation sites. When brazing the copper foil, the copper layer can not only ensure uniform thickness coverage, but also better bonding between the copper layer and the inner wall of the circuit pattern, and the copper layer and the ceramic substrate have excellent bonding performance.

[0027] Example 3 A method for copper plating a ceramic substrate comprises the following steps: S100. Forming a circuit pattern on a ceramic substrate; S200. Grinding along the formed circuit pattern using a grinding needle to form a rough surface on the inner wall of the circuit pattern; S300. After the ceramic substrate is activated and soaked, the copper foil is brazed; S400. Etching the ceramic substrate.

[0028] Furthermore, the step S100 includes: S110. Using a laser beam to perform a first scan on the entire surface of the ceramic substrate; S120. Perform a second scan to form a circuit pattern on the ceramic substrate using the second scan; S130. Finally, a third scan is performed along the direction of the line pattern, with the same parameters as the first scan.

[0029] Preferably, the power of the first scan and the third scan is 10W, and the power of the second scan is 20W. Furthermore, in the step S200, the lower end and the side wall of the grinding needle are configured as rough surfaces, and the roughness of the grinding needle is 100-200 meshes.

[0030] Furthermore, in step S300, the activation solution is a colloidal palladium activation solution, and the colloidal palladium activation solution is composed of 30-40% tin chloride and 60-70% palladium chloride.

[0031] Furthermore, in step S400, the etching solution is cupric chloride etching solution.

[0032] During use, the present invention has the following beneficial effects: After forming the circuit pattern on the ceramic substrate, the inner wall of the circuit pattern is roughened by using a grinding needle. In this way, during the subsequent activation, the inner wall of the circuit pattern can be combined with more activation sites. When brazing the copper foil, the copper layer can not only ensure uniform thickness coverage, but also better bonding between the copper layer and the inner wall of the circuit pattern, and the copper layer and the ceramic substrate have excellent bonding performance.

[0033] Example 4 A method for copper plating a ceramic substrate comprises the following steps: S100. Forming a circuit pattern on a ceramic substrate; S200. Grinding along the formed circuit pattern using a grinding needle to form a rough surface on the inner wall of the circuit pattern; S300. After the ceramic substrate is activated and soaked, the copper foil is brazed; S400. Etching the ceramic substrate.

[0034] Furthermore, the step S100 includes: S110. Using a laser beam to perform a first scan on the entire surface of the ceramic substrate; S120. Perform a second scan to form a circuit pattern on the ceramic substrate using the second scan; S130. Finally, a third scan is performed along the direction of the line pattern, with the same parameters as the first scan.

[0035] Preferably, the power of the first scan and the third scan is 7W, and the power of the second scan is 18W. Furthermore, in the step S200, the lower end and the side wall of the grinding needle are configured as rough surfaces, and the roughness of the grinding needle is 100 mesh.

[0036] Furthermore, in step S300, the activation solution is a colloidal palladium activation solution, and the colloidal palladium activation solution is composed of 30-40% tin chloride and 60-70% palladium chloride.

[0037] Furthermore, in step S400, the etching solution is cupric chloride etching solution.

[0038] During use, the present invention has the following beneficial effects: After forming the circuit pattern on the ceramic substrate, the inner wall of the circuit pattern is roughened by using a grinding needle. In this way, during the subsequent activation, the inner wall of the circuit pattern can be combined with more activation sites. When brazing the copper foil, the copper layer can not only ensure uniform thickness coverage, but also better bonding between the copper layer and the inner wall of the circuit pattern, and the copper layer and the ceramic substrate have excellent bonding performance.

[0039] Example 5 A method for copper plating a ceramic substrate comprises the following steps: S100. Forming a circuit pattern on a ceramic substrate; S200. Grinding along the formed circuit pattern using a grinding needle to form a rough surface on the inner wall of the circuit pattern; S300. After the ceramic substrate is activated and soaked, the copper foil is brazed; S400. Etching the ceramic substrate.

[0040] Furthermore, the step S100 includes: S110. Using a laser beam to perform a first scan on the entire surface of the ceramic substrate; S120. Perform a second scan to form a circuit pattern on the ceramic substrate using the second scan; S130. Finally, a third scan is performed along the direction of the line pattern, with the same parameters as the first scan.

[0041] Preferably, the power of the first scan and the third scan is 7W, and the power of the second scan is 18W. Furthermore, in the step S200, the lower end and the side wall of the grinding needle are configured as rough surfaces, and the roughness of the grinding needle is 200 meshes.

[0042] Furthermore, in step S300, the activation solution is a colloidal palladium activation solution, and the colloidal palladium activation solution is composed of 30-40% tin chloride and 60-70% palladium chloride.

[0043] Furthermore, in step S400, the etching solution is cupric chloride etching solution.

[0044] During use, the present invention has the following beneficial effects: After forming the circuit pattern on the ceramic substrate, the inner wall of the circuit pattern is roughened by using a grinding needle. In this way, during the subsequent activation, the inner wall of the circuit pattern can be combined with more activation sites. When brazing the copper foil, the copper layer can not only ensure uniform thickness coverage, but also better bonding between the copper layer and the inner wall of the circuit pattern, and the copper layer and the ceramic substrate have excellent bonding performance.

[0045] Example 6 A method for copper plating a ceramic substrate comprises the following steps: S100. Forming a circuit pattern on a ceramic substrate; S200. Grinding along the formed circuit pattern using a grinding needle to form a rough surface on the inner wall of the circuit pattern; S300. After the ceramic substrate is activated and soaked, the copper foil is brazed; S400. Etching the ceramic substrate.

[0046] Furthermore, the step S100 includes: S110. Using a laser beam to perform a first scan on the entire surface of the ceramic substrate; S120. Perform a second scan to form a circuit pattern on the ceramic substrate using the second scan; S130. Finally, a third scan is performed along the direction of the line pattern, with the same parameters as the first scan.

[0047] Preferably, the power of the first scan and the third scan is 7W, and the power of the second scan is 18W. Furthermore, in the step S200, the lower end and the side wall of the grinding needle are configured as rough surfaces, and the roughness of the grinding needle is 150 meshes.

[0048] Furthermore, in step S300, the activation solution is a colloidal palladium activation solution, and the colloidal palladium activation solution is composed of 30-40% tin chloride and 60-70% palladium chloride.

[0049] Furthermore, in step S400, the etching solution is cupric chloride etching solution.

[0050] During use, the present invention has the following beneficial effects: After forming the circuit pattern on the ceramic substrate, the inner wall of the circuit pattern is roughened by using a grinding needle. In this way, during the subsequent activation, the inner wall of the circuit pattern can be combined with more activation sites. When brazing the copper foil, the copper layer can not only ensure uniform thickness coverage, but also better bonding between the copper layer and the inner wall of the circuit pattern, and the copper layer and the ceramic substrate have excellent bonding performance.

[0051] Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for copper plating a ceramic substrate, characterized in that: The following steps are involved: S100. Forming a circuit pattern on a ceramic substrate; S200. Grinding along the formed circuit pattern using a grinding needle to form a rough surface on the inner wall of the circuit pattern; S300. After the ceramic substrate is activated and soaked, the copper foil is brazed; S400. Etching the ceramic substrate.

2. A method for copper plating a ceramic substrate according to claim 1, characterized in that: The step S100 includes: S110. Using a laser beam to perform a first scan on the entire surface of the ceramic substrate; S120. Perform a second scan to form a circuit pattern on the ceramic substrate using the second scan; S130. Finally, a third scan is performed along the direction of the line pattern, with the same parameters as the first scan.

3. A method for copper plating a ceramic substrate according to claim 2, characterized in that: The power of the first scan and the third scan is 5-10W, and the power of the second scan is 15-20W.

4. A method for copper plating a ceramic substrate according to claim 1, characterized in that: In the step S200, the lower end and the side wall of the grinding needle are configured as rough surfaces, and the roughness of the grinding needle is 100-200 meshes.

5. A method for copper plating a ceramic substrate according to claim 1, characterized in that: In the step S300, the activation solution is a colloidal palladium activation solution, and the colloidal palladium activation solution is composed of 30-40% tin chloride and 60-70% palladium chloride.

6. A method for copper plating a ceramic substrate according to claim 1, characterized in that: In the step S400, the etching solution is cupric chloride etching solution.