Method for manufacturing light-emitting device and light-emitting device

Abstract

The invention provides a method for manufacturing a light-emitting device and a light-emitting device capable of improving light-emitting characteristics. This method for manufacturing a light-emitting device is provided with: a step for preparing a structure that has a substrate and a light source unit that has an element substrate and a plurality of light-emitting units, each of which has a semiconductor structure, and that is disposed on the substrate; a semiconductor structure having a first surface facing the element substrate and a second surface located on the opposite side of the first surface; and a step for disposing a first resin part, in which a structure is disposed between the upper mold and the lower mold, a resin material is supplied into the mold in a state in which the upper surface of the element substrate is covered by a covering member, the covering member is removed after the resin material is cured, and the first resin part is disposed in the mold. Arranging a first resin portion between the second surface of each semiconductor structure and the upper surface of the substrate; and removing the element substrate from the light source part.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a light emitting device and the light emitting device. Background Art

[0002] For example, Patent Document 1 discloses forming a resin member between a light emitting element and a substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-23156 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] An object of the embodiments of the present disclosure is to provide a method for manufacturing a light-emitting device and a light-emitting device capable of improving light-emitting characteristics.

[0008] Technical solutions for solving technical problems

[0009] According to one aspect of the present disclosure, a method for manufacturing a light-emitting device comprises: a process of preparing a structure, wherein the structure has a substrate and a light source portion, the substrate has a plurality of pairs of wiring portions on an upper surface, the light source portion has an element substrate and a plurality of light-emitting portions, and is arranged on the substrate, wherein each of the light-emitting portions has a semiconductor structure and a pair of electrode portions, the semiconductor structure has a first surface opposite to the element substrate, and a second surface located on the opposite side of the first surface, the pair of electrode portions are arranged on the second surface of the semiconductor structure and are electrically connected to the pair of wiring portions of the substrate; a process of preparing a mold, wherein the mold has an upper mold and a lower mold; a process of arranging a first resin portion, arranging the structure between the upper mold and the lower mold, and supplying a resin material into the mold in a state where the upper surface of the element substrate is covered by a covering member, and after the resin material is cured, removing the covering member, thereby arranging the first resin portion between the second surface of each of the semiconductor structures and the upper surface of the substrate; and a process of removing the element substrate from the light source portion.

[0010] According to one aspect of the present disclosure, a light-emitting device comprises: a first structure having a substrate, a plurality of light-emitting portions arranged on the upper surface of the substrate, and a first resin portion that holds the plurality of light-emitting portions and exposes the upper surfaces of the light-emitting portions; a second structure having a plurality of wavelength conversion components arranged on each of the light-emitting portions, and a second resin portion arranged between the plurality of wavelength conversion components, wherein the first resin portion has a light reflecting portion with high light reflectivity, and a light absorbing portion arranged above the light reflecting portion and having a light absorbency higher than that of the light reflecting portion, and the second resin portion is arranged on the light absorbing portion.

[0011] Effects of the Invention

[0012] According to the embodiments of the present disclosure, it is possible to provide a method for manufacturing a light-emitting device and a light-emitting device capable of achieving good light-emitting characteristics. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a schematic top view of the light emitting device according to the first embodiment.

[0014] Figure 2 yes Figure 1 Schematic cross-sectional view of line II-II.

[0015] Figure 3 It is a schematic bottom view of the light emitting portion and the bonding member in the light emitting device according to the first embodiment.

[0016] Figure 4A This is a schematic plan view for explaining one step of the method for manufacturing the light emitting device according to the first embodiment.

[0017] Figure 4B yes Figure 4A Schematic cross-sectional view of line IVB-IVB.

[0018] Figure 4C This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the first embodiment.

[0019] Figure 4D This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the first embodiment.

[0020] Figure 4E This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the first embodiment.

[0021] Figure 4F This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the first embodiment.

[0022] Figure 5A This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the first embodiment.

[0023] Figure 5B This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the first embodiment.

[0024] Figure 5C This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the first embodiment.

[0025] Figure 5D This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the first embodiment.

[0026] Fig. 6A This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the first embodiment.

[0027] Figure 6B This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the first embodiment.

[0028] Figure 6C This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the first embodiment.

[0029] Fig.6D This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the first embodiment.

[0030] Figure 7 It is a schematic plan view of a light emitting device according to a second embodiment.

[0031] Figure 8 yes Figure 7 Schematic cross-sectional view along line VIII-VIII.

[0032] Fig. 9 It is a schematic cross-sectional view of a light emitting device according to a third embodiment.

[0033] Fig. 10A This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the third embodiment.

[0034] Fig. 10B This is a schematic plan view for explaining one step of the method for manufacturing the light emitting device according to the third embodiment.

[0035] Fig. 10C yes Fig. 10B Schematic cross-sectional view of the XC-XC line.

[0036] Fig. 10D This is a schematic plan view for explaining one step of the method for manufacturing the light emitting device according to the third embodiment.

[0037] Fig.10Eyes Fig. 10D Schematic cross-sectional view of the XE-XE line.

[0038] Fig.10F This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the third embodiment.

[0039] Figure 10G This is a schematic cross-sectional view for explaining one step of the method for manufacturing the light emitting device according to the third embodiment. DETAILED DESCRIPTION

[0040] Hereinafter, the manufacturing method and the light-emitting device of the embodiment of the present disclosure will be described with reference to the accompanying drawings. The manner shown below illustrates the manufacturing method and the light-emitting device for embodying the technical idea of ​​the present embodiment, but is not limited to the following content. In addition, unless otherwise specified, the size, material, shape, relative configuration, etc. of the constituent parts described in the embodiment are not intended to limit the scope of the present disclosure, but are simply illustrative examples. It should be noted that in order to make the description clear, the size, positional relationship, etc. of the components shown in each drawing are sometimes magnified. In addition, in the following description, the same name and figure mark represent the same or homogeneous components, and the detailed description is appropriately omitted. In addition, as a sectional view, an end view showing only the cut surface is sometimes shown.

[0041] In the following description, sometimes use the terminology (for example, "upper", "lower" and other terms including these terms) to indicate a specific direction or position. However, these terms are used only to make it easy to understand the relative direction or position in the referenced drawings. As long as the relative direction or position relationship of the terms such as "upper" and "lower" in the referenced drawings is the same, it is also possible that the configuration is not the same as the referenced drawings in the drawings other than the present disclosure, the actual product, etc. The positional relationship expressed as "upper (or lower)" in this specification, for example, when assuming that there are two components, also includes the situation where the two components are connected, and the situation where the two components are not connected and one component is located above (or below) another component. In addition, in this specification, as long as there is no specific description, the component covers the coating object, including the situation where the component is in contact with the coating object and directly covers the coating object, and the situation where the component and the coating object indirectly cover the coating object without contact. In addition, in this specification, the width, distance, and thickness of the component in a specific direction respectively represent the maximum values ​​of the width, distance, and thickness in a specific direction. In addition, the top view in the terms of the embodiment refers to observing the object from above. In addition, in this specification, in addition to a part that can be directly recognized from above, a part that cannot be directly recognized from above may also be described using the term "viewed from above" as if it can be seen through.

[0042] In the following figures, directions are sometimes represented by the X-axis, the Y-axis, and the Z-axis. The direction along the X-axis (for example, set as the first direction X) represents a predetermined direction within the light-emitting surface of the light-emitting device of the embodiment. The direction along the Y-axis (for example, set as the second direction Y) represents a direction orthogonal to the first direction X within the above-mentioned light-emitting surface. The light-emitting surface of the light-emitting device is parallel to the XY plane. The direction along the Z-axis (for example, set as the third direction Z) represents a direction orthogonal to the light-emitting surface of the light-emitting device.

[0043] In addition, in this specification, the following terms defined in JIS K6800 are used as terms indicating the cured state of a resin.

[0044] Stage A: The initial stage of the thermosetting resin formation reaction. The resin in this stage is still molten in a certain solvent and melts when heated.

[0045] Stage B: The intermediate state of curing of thermosetting resins. The resin in this state softens when heated and swells when exposed to certain solvents, but is not completely melted or dissolved.

[0046] Stage C: The final state of the curing reaction of the thermosetting resin. The resin in this state is insoluble and infusible, and the completely cured thermosetting resin is in this state.

[0047] [First embodiment]

[0048] Reference Figure 1 to Figure 3 A light emitting device 1 according to the first embodiment will be described. The light emitting device 1 includes a first structure body 101 and a second structure body 102. The second structure body 102 is disposed on the first structure body 101.

[0049] <First structure>

[0050] The first structure body 101 includes a substrate 10 , a plurality of light emitting sections 20 , and a first resin section 30 . The plurality of light emitting sections 20 are arranged on the substrate 10 , and are integrally held by the first resin section 30 .

[0051] As a plurality of light emitting units 20, Figure 1 9 light emitting units 20 are arranged in a matrix in the first direction X and the second direction Y. Figure 2 , three light emitting units 20 adjacent to each other in the first direction X are shown. It should be noted that the arrangement and number of the plurality of light emitting units 20 are not limited thereto, and can be changed according to the light emitting characteristics required by the light emitting device 1. For example, the plurality of light emitting units 20 may also be 5×5 or 7×9 light emitting units arranged in a matrix in the first direction X and the second direction Y.

[0052] The light emitting device 1 can be used as a flash light source of a photographing device, for example. The photographing device can be mounted on a mobile communication terminal, for example. When the light emitting device 1 is used as a flash light source of a photographing device, for example, it is possible to switch between a narrow-angle mode in which only the light emitting unit 20 arranged in the center when viewed from above emits light and a wide-angle mode in which all the light emitting units 20 emit light to irradiate light. The irradiation angle of light in the narrow-angle mode is narrower than that in the wide-angle mode. The light emitting device 1 can switch the irradiated light corresponding to the narrow-angle mode and the wide-angle mode, thereby, for example, enabling photographing corresponding to photographing modes such as telephoto or close-up of the photographing device. In addition, in the wide-angle mode, the irradiation angle can be adjusted by controlling the light emission intensity of each light emitting unit 20.

[0053] (Luminous part)

[0054] like Figure 2 As shown, a plurality of light emitting units 20 are arranged on the upper surface of the substrate 10. Each light emitting unit 20 has a semiconductor structure 21. The semiconductor structure 21 has a first surface 21A and a second surface 21B located on the opposite side of the first surface 21A in the third direction Z. For example, the first surface 21A is the upper surface, and the second surface 21B is the lower surface.

[0055] The semiconductor structure 21 includes a nitride semiconductor. In this specification, for example, a nitride semiconductor includes a x Al y Ga 1－x－y Semiconductors of all compositions in which the composition ratios x and y vary within various ranges in the chemical formula represented by N (0≤x≤1, 0≤y≤1, x+y≤1). In addition, in the above chemical formula, semiconductors containing group V elements other than N (nitrogen) and semiconductors containing various elements added to control various physical properties such as the conductivity type of the semiconductor are also included in nitride semiconductors. The semiconductor structure 21 includes an active layer. The active layer is a light-emitting layer that emits light, such as an MQW (Multiple Quantum well) structure having multiple barrier layers and multiple well layers. The light emitted by the active layer is, for example, visible light or ultraviolet light. For example, a plurality of light-emitting units 20 whose deviations in optical properties (brightness, chromaticity, etc.) converge within a specified range are screened out and used in the light-emitting device 1. The light-emitting unit 20 may also include a protective film for protecting the semiconductor structure 21.

[0056] The plurality of light emitting units 20 may be composed of light emitting units 20 having the same peak wavelength, or may include light emitting units 20 having different peak wavelengths. It should be noted that the light emitting units 20 having the same peak wavelength may have peak wavelengths within a range of ±5 nm.

[0057] exist Figure 2The light-emitting portion 20 shown does not have an element substrate used to grow the semiconductor structure 21. As a result, the light emitted by the active layer that is reflected on the side of the element substrate and returned to the semiconductor structure 21 can be reduced, and the light extraction efficiency can be improved. In addition, the light-emitting portion 20 does not have an element substrate, thereby reducing the spread of light in the light-emitting portion 20 caused by the light emitted by the active layer propagating into the element substrate, and the illumination of the light of each light-emitting portion 20 on the irradiated surface can be improved. The upper surface 20A of the light-emitting portion 20 can be the first surface 21A of the semiconductor structure 21, or when there is a protective film covering the first surface 21A on the first surface 21A, it can be the upper surface of the protective film.

[0058] Each light emitting unit 20 further includes a pair of electrode units 22 disposed on the second surface 21B of the semiconductor structure 21. One of the pair of electrode units 22 functions as an anode electrode, and the other functions as a cathode electrode. The pair of electrode units 22 only needs to include an anode electrode and a cathode electrode, and may include three or more electrode units.

[0059] The first surface 21A of the semiconductor structure 21 may include a rough surface. The arithmetic mean roughness of the rough surface on the first surface 21A is, for example, 0.5 μm or more and 10 μm or less. The first surface 21A of the semiconductor structure 21 includes a rough surface, thereby improving the light extraction efficiency from the first surface 21A of the semiconductor structure 21.

[0060] (Substrate)

[0061] The plurality of light emitting units 20 are arranged on the upper surface of the substrate 10 so as to be separated from each other in the first direction X and the second direction Y. The substrate 10 functions as a supporting member for the light emitting unit 20. The thickness of the substrate 10 is thicker than the thickness of each light emitting unit 20 without the element substrate and the thickness of the first resin unit 30. By setting the thickness of the substrate 10 as described above, the mechanical strength can be improved, and the thin light emitting unit 20 and the first resin unit 30 can be reduced from being damaged during the operation of the light emitting device 1. In addition, in the process of removing the element substrate described later, the influence on the light emitting unit 20 and the first resin unit 30 caused by the vibration generated when the element substrate is removed can be reduced. The thickness of the substrate 10 is, for example, 80 μm or more and 500 μm or less, preferably 150 μm or more and 300 μm or less. Thus, the mechanical strength of the substrate 10 can be improved, and the light emitting device 1 can be made small. The thickness of the light emitting unit 20 is, for example, 3 μm or more and 30 μm or less, or 5 μm or more and 15 μm or less. The thickness of the first resin portion 30 is greater than the thickness of the light emitting portion 20 by at least the thickness of the bonding member 80 and the like. The thickness of the first resin portion 30 is, for example, 8 μm to 200 μm, or 8 μm to 100 μm.

[0062] The substrate 10 also functions as a wiring component that electrically connects the light-emitting portion 20 to an external circuit. The substrate 10 has a plurality of pairs of wiring portions 11 on the upper surface. Specifically, the substrate 10 has an insulating substrate 13 and a plurality of first wiring portions 11 disposed on an upper surface 13A of the insulating substrate 13. A pair of first wiring portions 11 is disposed with respect to one light-emitting portion 20. One of the pair of first wiring portions 11 is electrically connected to one of the pair of electrode portions 22 of the light-emitting portion 20, and the other of the pair of first wiring portions 11 is electrically connected to the other of the pair of electrode portions 22 of the light-emitting portion 20. A pair of wiring portions 11 only needs to include an anode-side wiring portion and a cathode-side wiring portion, and may also include three or more wiring portions.

[0063] The insulating substrate 13 has a lower surface 13B located on the opposite side of the upper surface 13A in the third direction Z. The substrate 10 can also have a second wiring portion 12 arranged on the lower surface 13B of the insulating substrate 13. The second wiring portion 12 can be electrically connected to the first wiring portion 11 via a conductive member that penetrates the insulating substrate 13, for example. The second wiring portion 12 functions as an external connection terminal electrically connected to the mounting substrate on which the light-emitting device 1 is mounted. It should be noted that the substrate 10 is not limited to a two-layer wiring structure of the first wiring portion 11 and the second wiring portion 12, and can have a multi-layer wiring structure with three or more layers.

[0064] As the material of the insulating substrate 13, for example, aluminum nitride, aluminum oxide, or silicon nitride can be used. When aluminum nitride is used as the material of the insulating substrate 13, the heat dissipation of the substrate 10 can be improved, and the heat generated by the light emission of the light emitting portion 20 can be efficiently released. In addition, when silicon nitride is used as the material of the insulating substrate 13, the thickness of the substrate 10 can be reduced while maintaining the mechanical strength of the substrate 10.

[0065] (First resin part)

[0066] The first resin portion 30 holds a plurality of light-emitting portions 20. The first resin portion 30 is disposed on the upper surface of the substrate 10 and disposed between the second surface 21B of the semiconductor structure 21 and the upper surface of the substrate 10. The first resin portion 30 is disposed between adjacent light-emitting portions 20 and covers the side surfaces of the light-emitting portions 20. In addition, the first resin portion 30 covers the outermost side surface of the light-emitting portion 20 located at the outermost side when viewed from above among the plurality of light-emitting portions 20. The side surface of the light-emitting portion 20 includes the side surface 21C of the semiconductor structure 21 and the side surface of the electrode portion 22. The first resin portion 30 is not disposed on the upper surface 20A of the light-emitting portion 20, and the upper surface 20A of the light-emitting portion 20 is exposed from the first resin portion 30. The first resin portion 30 is disposed between a pair of electrode portions 22 in each light-emitting portion 20. The first resin portion 30 has insulating properties and does not short-circuit the pair of electrode portions 22.

[0067] The first resin portion 30 includes the resin portion of the base material and the metal oxide contained in the resin portion of the base material. Figure 2 In the light emitting device 1 shown, the first resin part 30 includes: a light reflecting part 31 having light reflectivity with respect to the light emitted by the light emitting part 20; and a light absorbing part 32 arranged on the light reflecting part 31. The reflectivity of the light reflecting part 31 is higher than that of the light absorbing part 32, and the light absorbing part 32 has a higher light absorbing rate than that of the light reflecting part 31. The light absorbing part 32 is arranged at least between adjacent light emitting parts 20. With respect to light with a peak emission wavelength of 450nm, the reflectivity of the light reflecting part 31 is 70% or more, 80% or more, or 90% or more. With respect to light with a peak emission wavelength of 450nm, the reflectivity of the light absorbing part 32 is 50% or less, 40% or less, or 30% or less. With respect to light with a peak emission wavelength of 450nm, the light absorbing rate of the light reflecting part 31 is 30% or less, 20% or less, or 10% or less. With respect to light with a peak emission wavelength of 450nm, the light absorbing rate of the light absorbing part 32 is 50% or more, 60% or more, or 70% or more. The reflectance and light absorption rate can be measured using, for example, a spectrophotometer.

[0068] exist Figure 2 In the light emitting device 1 shown, the upper surface of the light absorbing portion 32 is the upper surface 30A of the first resin portion 30 between adjacent light emitting portions 20. The light absorbing portion 32 is located, for example, above the active layer of the semiconductor structure 21 between adjacent light emitting portions 20. Thus, a portion of the light emitted from the active layer of the semiconductor structure 21 can be absorbed by the light absorbing portion 32, and the light emitted from the light emitting portion 20 to the adjacent light emitting portion 20 can be reduced. For example, the light absorbing portion 32 is located on the first surface 21A side of the semiconductor structure 21 at a position that is 1 / 2 of the thickness of the semiconductor structure 21. The thickness of the semiconductor structure 21 is, for example, not less than 2 μm and not more than 25 μm, or not less than 4 μm and not more than 15 μm. The thickness of the light absorbing portion 32 is, for example, not more than 2 μm.

[0069] A light reflecting portion 31 is provided between adjacent light emitting portions 20, so that when one light emitting portion 20 emits light and the light emitting portion 20 adjacent to the one light emitting portion 20 does not emit light, the light emitted by the one light emitting portion 20 can be reduced from irradiating the non-emitting light emitting portion 20. Thus, a light emitting device 1 having a high contrast ratio (ratio of brightness between the light emitting area and the non-light emitting area) can be manufactured. In addition, a light absorbing portion 32 is further provided between adjacent light emitting portions 20, so that the contrast ratio of the light emitting device 1 can be further improved.

[0070] In addition, the light absorbing portion 32 is provided on the side of the upper surface 21A of the light emitting portion 20, which serves as the light emitting surface. This can reduce multiple reflections at the interface between the side surface of the light emitting portion 20 and the first resin portion 30 near the light emitting surface of the light emitting portion 20, compared with the case where the light reflecting portion 31 is provided. As a result, when the light emitting device 1 is viewed from above, the bright line above the interface between the light emitting portion 20 and the first resin portion 30, which appears to emit strong light, can be reduced.

[0071] In addition, a portion of the first resin portion 30 is located outside the plurality of light-emitting portions 20 when viewed from above. The light-reflecting portion 31 covers the outermost side of the light-emitting portion 20 located at the outermost side when viewed from above among the plurality of light-emitting portions 20. Thus, it is possible to reduce the emission of light outside the region (non-light-emitting region) where the plurality of light-emitting portions 20 are arranged, and to produce a light-emitting device 1 with a high contrast.

[0072] For example, on the upper surface of the first structure 101, the upper surface 20A of the light emitting portion 20 and the upper surface 30A of the first resin portion 30 are located on the same plane. After the element substrate is removed as described later, the light emitting device 1 preferably performs a grinding process on the upper surface of the first structure 101. By performing the grinding process, the upper surface 20A of the light emitting portion 20 and the upper surface 30A of the first resin portion 30 are located on the same plane, and cracks in the semiconductor layer caused by the process of removing the element substrate can be removed. It should be noted that, as another embodiment, the first resin portion 30 may also have a portion located on the same plane as the upper surface 20A of the light emitting portion 20, and a portion different in height direction from the upper surface 20A of the light emitting portion 20. For example, the first resin portion 30 may have a portion located on the same plane as the upper surface 20A of the light emitting portion 20 in a region adjacent to the upper surface 20A of the light emitting portion 20, and a region located outside the plurality of light emitting portions 20 in a plan view includes a convex portion or a concave portion.

[0073] The first resin part 30 can include, for example, a resin matrix and a metal oxide. As the material of the resin matrix, thermosetting resins such as silicone resin, silicone modified resin, epoxy resin, epoxy modified resin or phenolic resin can be used. Among them, silicone resin or its modified resin with excellent light resistance and heat resistance is particularly preferred. As the metal oxide, for example, titanium oxide can be used. For example, the light absorption part 32 can be made by irradiating the upper surface 30A side of the first resin part 30 with a laser so that the light absorption rate of titanium oxide is changed. The light absorption rate of the light absorption part 32 containing the changed titanium oxide is higher than the light absorption rate of the light reflection part 31 containing the titanium oxide before the change. It should be noted that the first resin part 30 may not contain metal oxides, and may also contain silicon oxide or the like instead of metal oxides. Alternatively, the light absorption part 32 can include a resin matrix and light absorbing substances such as carbon black.

[0074] The light absorbing portion 32 is, for example, a resin portion that is located at the portion irradiated with laser light and contains titanium oxide (hereinafter referred to as modified titanium oxide) that lacks oxygen components when the laser light is irradiated from the upper surface 30A side of the first resin portion 30. The band gap energy of the modified titanium oxide is smaller than that of the titanium oxide before the laser light irradiation. In addition, the band gap energy of the modified titanium oxide contained in the light absorbing portion 32 is smaller than that of the titanium oxide contained in the light reflecting portion 31. The titanium oxide before the laser light irradiation is, for example, titanium oxide having a rutile crystal structure.

[0075] <Second structure>

[0076] The second structure body 102 is disposed on the first structure body 101. The second structure body 102 includes a plurality of wavelength conversion members 40 and a second resin portion 50. The plurality of wavelength conversion members 40 are integrally held by the second resin portion 50.

[0077] (Wavelength conversion component)

[0078] A plurality of wavelength conversion members 40 are disposed on each light emitting unit 20. The wavelength conversion member 40 converts the wavelength of at least a portion of the light emitted by the light emitting unit 20. The light emitting device 1 emits light that is a mixture of the light emitted by the light emitting unit 20 and the light converted by the wavelength conversion member 40.

[0079] The distance between two adjacent light emitting units 20 among the plurality of light emitting units 20 can be set to be greater than 1 μm and less than 15 μm. By setting the distance between two adjacent light emitting units 20 to be as narrow as described above, a larger light emitting unit 20 can be used when the top view area of ​​the light emitting device 1 and the number of light emitting units 20 are assumed to be the same. As a result, light extraction of the light emitting device 1 is improved. The distance between two adjacent wavelength conversion components 40 among the plurality of wavelength conversion components 40 can be greater than 10 μm and less than 80 μm, and can be set to be greater than 15 μm and less than 40 μm.

[0080] like Figure 1 As shown, the shape of the light-emitting portion 20 and the shape of the wavelength conversion component 40 can be made into a rectangle when viewed from above. The length of the long side of the light-emitting portion 20 is, for example, not less than 100 μm and not more than 2000 μm, or not less than 200 μm and not more than 1000 μm. The length of the long side of the wavelength conversion component 40 is, for example, not less than 150 μm and not more than 950 μm. It should be noted that when the shape of the light-emitting portion 20 and the shape of the wavelength conversion component 40 are square, the long side of the light-emitting portion 20 or the wavelength conversion component 40 can be replaced by one side of the light-emitting portion 20 or the wavelength conversion component 40.

[0081] When viewed from above, the outer edge 40E of the wavelength conversion component 40 is located on the inner side of the outer edge 20E of the light emitting section 20. Thus, each light emitting section 20 can emit light of a narrow angle with reduced light spread, compared with the case where the outer edge 40E of the wavelength conversion component 40 coincides with the outer edge 20E of the light emitting section 20 or is located outside the outer edge 20E of the light emitting section 20 when viewed from above. In addition, when viewed from above, the wavelength conversion component 40 is arranged at a position that does not overlap with the light absorbing section 32. Thus, it is possible to reduce the light that has been wavelength-converted or reflected by the wavelength conversion material or light diffusion material contained in the wavelength conversion component 40 and returns to the light emitting section 20 side, and a part of the light is absorbed by the light absorbing section 32. Thus, the light extraction efficiency of the light emitting device 1 can be improved. It should be noted that the outer edge 40E of the wavelength conversion component 40 may coincide with the outer edge 20E of the light emitting section 20 or be located outside the outer edge 20E of the light emitting section 20 when viewed from above.

[0082] The light-emitting device 1 can also include a bonding component 80 that bonds a pair of electrode portions 22 of the light-emitting portion 20 and a pair of first wiring portions 11 of the substrate 10 corresponding thereto. The electrode portion 22 and the first wiring portion 11 are electrically connected via the bonding component 80. As a material for the bonding component 80, for example, a gold-tin alloy can be used. Compared to a case where the electrode portion 22 and the first wiring portion 11 are bonded using a gold bump, if a gold-tin alloy is used as the material for the bonding component 80, the contact area between the electrode portion 22 and the bonding component 80 can be increased. As a result, the electrical resistance or thermal resistance between the electrode portion 22 and the first wiring portion 11 can be reduced, and the bonding strength between the electrode portion 22 and the first wiring portion 11 can be increased. Figure 3 As shown, in a plan view, the area where the bonding member 80 contacts the electrode portion 22 can be set to be, for example, 70% or more of the area of ​​the electrode portion 22. It should be noted that the bonding member 80 may be a known bonding member such as a gold bump.

[0083] like Figure 2 As shown, the wavelength conversion member 40 can include a fluorescent layer 41 disposed on the first surface 21A of the semiconductor structure 21 , a light diffusion layer 42 disposed on the fluorescent layer 41 , and a light-transmitting layer 43 disposed on the light diffusion layer 42 .

[0084] The phosphor layer 41 includes, for example, the same resin matrix as the first resin portion 30 and a wavelength conversion substance. As the wavelength conversion substance, for example, a yttrium-aluminum-garnet phosphor (for example, (Y, Gd) 3 (Al, Ga) 5 O 12 :Ce), lutetium·aluminum·garnet-based phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium·aluminum·garnet phosphors (for example, Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate phosphors (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate phosphors (e.g., (Ba, Sr, Ca, Mg)2SiO4:Eu), β-sialon phosphors (e.g., (Si, Al)3(O, N)4:Eu), or α-sialon phosphors (e.g., Ca(Si, Al) 12 (O, N) 16 : Eu) and other nitride oxide phosphors, LSN phosphors (e.g., (La, Y)3Si6N 11 :Ce), BSESN phosphors (e.g., (Ba, Sr)2Si5N8:Eu), SLA phosphors (e.g., SrLiAl3N4:Eu), CASN phosphors (e.g., CaAlSiN3:Eu) or SCASN phosphors (e.g., (Sr, Ca)AlSiN3:Eu), etc., nitride phosphors, KSF phosphors (e.g., K2SiF6:Mn), KSAF phosphors (e.g., K2(Si 1－x Al x )F 6－x :Mn, where x satisfies 0<x<1) or fluoride-based phosphors such as MGF-based phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), quantum dots with a perovskite structure (e.g., (Cs, FA, MA)(Pb, Sn)(F, Cl, Br, I)3, where FA and MA represent formamidine and methylammonium, respectively), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP) or quantum dots with a chalcopyrite structure (e.g., (Ag, Cu)(In, Ga)(S, Se)2), etc.

[0085] The phosphor layer 41 may contain one type of wavelength conversion substance, or may contain a plurality of types of wavelength conversion substances.

[0086] The light diffusion layer 42 diffuses the light emitted by the light emitting portion 20 and the light converted in wavelength by the fluorescent layer 41. The light diffusion layer 42 can, for example, include the same resin matrix as the first resin portion 30 and a light diffusion substance. As the light diffusion substance, for example, titanium oxide or silicon oxide can be used. When the light emitting device 1 is observed from the light emitting surface side in non-luminous state, the body color of the wavelength conversion component 40 and the body color of the second resin portion 50 can be made close by the light diffusion layer 42, so that a light emitting device having an excellent appearance in non-luminous state can be made. The concentration of the light diffusion substance in the light diffusion layer 42 is preferably lower than the concentration of the light reflective substance in the second resin portion 50. Thus, it is possible to easily extract light from the wavelength conversion component 40.

[0087] The light-transmitting layer 43 may include, for example, the same resin matrix as the first resin portion 30. The light-transmitting layer 43 does not include a light diffusing substance. The light-transmitting layer 43 has a higher transmittance than the light diffusing layer 42 with respect to the light emitted by the light-emitting portion 20 and the light converted in wavelength by the phosphor layer 41.

[0088] (Second resin part)

[0089] The second resin portion 50 is disposed between the plurality of wavelength conversion members 40. The second resin portion 50 has light reflectivity with respect to the light emitted by the light emitting portion 20 and the light converted in wavelength by the wavelength conversion member 40. The second resin portion 50 can be made into, for example, the same structure as the light reflecting portion 31 of the first resin portion 30. In addition, the second resin portion 50 may contain silicon oxide or the like as a light reflective substance, not limited to metal oxides.

[0090] By providing the second resin portion 50 between adjacent wavelength conversion components 40, when one light emitting portion 20 emits light and a light emitting portion 20 adjacent to the one light emitting portion 20 does not emit light, the incidence of light emitted from the one light emitting portion 20 on the wavelength conversion component 40 on the non-emitting light emitting portion 20 can be reduced, and the wavelength conversion material contained in the wavelength conversion component 40 on the non-emitting light emitting portion 20 emits light. Thus, a light emitting device 1 with high contrast can be manufactured.

[0091] The second resin portion 50 is disposed on the light absorbing portion 32. Thus, in the case where the body color of the light absorbing portion 32 is black, for example, when the adjacent light emitting portions 20 are all emitting light, the region between the adjacent light emitting portions 20 can be reduced from looking black. In addition, compared with the case where the second resin portion 50 is not disposed or the second resin portion 50 is light-transmissive, the light absorbing portion 32 is not recognizable when the light emitting device 1 is viewed from above, and thus a light emitting device having an excellent appearance when not emitting light can be made. A light emitting device having an excellent appearance refers to, for example, a light emitting device having few colors and a simple appearance. For example, when the light emitting device 1 is used as a flash light source in a mobile communication terminal, the light emitting device 1 can be recognizable from the outside of the frame. In this case, as long as the light emitting device 1 is a light emitting device having a simple appearance, the overall appearance of the mobile communication terminal will not be impaired, and the degree of freedom in the design of the mobile communication terminal is increased.

[0092] exist Figure 2 In the light emitting device shown, the second resin portion 50 does not cover the outer side surface of the wavelength conversion component 40 located at the outermost side in a plan view. It should be noted that the light emitting device of the present disclosure is not limited thereto, and the second resin portion 50 may also cover the outer side surface of the wavelength conversion component 40 located at the outermost side in a plan view.

[0093] The light emitting device 1 may further include a third resin portion 60, which covers at least the side surface of the first resin portion 30 and a portion of the upper surface of the substrate 10. The third resin portion 60 is arranged on the outer peripheral portion 10C on the upper surface of the substrate 10 where the first resin portion 30 and the light emitting portion 20 are not arranged, and covers the outermost side surface of the first resin portion 30. The third resin portion 60 has light reflectivity with respect to the light emitted by the light emitting portion 20 and the light converted in wavelength by the wavelength conversion member 40. The third resin portion 60 can further reduce the emission of light to the outside (non-light emitting area) of the area where the plurality of light emitting portions 20 are arranged, and can be made into a light emitting device 1 with high contrast.

[0094] The third resin portion 60 can also be located outside the plurality of wavelength conversion components 40 when viewed from above. The third resin portion 60 is arranged on the first resin portion 30 and on the outer peripheral portion 10C of the upper surface of the substrate 10 outside the plurality of wavelength conversion components 40, and covers the outermost side of the wavelength conversion component 40. Thus, it is possible to reduce the emission of light to the outside (non-luminescent region) of the region where the plurality of wavelength conversion components 40 are arranged, and to produce a light-emitting device 1 with high contrast. In addition, the third resin portion 60 can be made into the same structure as the second resin portion 50, for example. Thus, when viewed from above, the body color of the second resin portion 50 and the body color of the third resin portion 60 can be made close, and a light-emitting device with excellent appearance when non-luminescent can be produced.

[0095] The light emitting device 1 may further include a light-transmitting adhesive layer 70, which is disposed between the first structure 101 and the second structure 102. The adhesive layer 70 continuously covers the upper surface 20A of each light emitting portion 20 and the upper surface of the light absorbing portion 32. The light emitting portion 20 and the wavelength conversion member 40 are bonded together, and the first resin portion 30 and the second resin portion 50 are bonded together.

[0096] The adhesive layer 70 is translucent to the light emitted by the light emitting unit 20 so that the light emitted by the light emitting unit 20 is incident on the wavelength conversion member 40. As the material of the adhesive layer 70, for example, a thermoplastic resin such as acryl, polycarbonate, cyclic polyolefin, polyethylene terephthalate or polyester, or a thermosetting resin such as epoxy or silicon can be used. The thickness of the adhesive layer 70 is, for example, not less than 1 μm and not more than 15 μm, or not less than 5 μm and not more than 10 μm.

[0097] The adhesive layer 70 can also cover the upper surface of the first resin portion 30 located outside the plurality of light-emitting portions 20 when viewed from above. The light-absorbing portion 32 can also be arranged below the adhesive layer 70 covering the upper surface of the first resin portion 30 located outside the plurality of light-emitting portions 20. In other words, the adhesive layer 70 can be arranged on the light-absorbing portion 32. Thus, in the area outside the plurality of light-emitting portions 20, the light emitted by the light-emitting portions 20 can be absorbed by the light-absorbing portion 32. Furthermore, the light propagating in the light-transmitting adhesive layer 70 can be absorbed by the light-absorbing portion 32. Thus, the light emitted to the area outside the plurality of light-emitting portions 20 can be reduced, and a light-emitting device 1 with a high contrast can be manufactured.

[0098] When the third resin portion 60 is provided, the adhesive layer 70 located outside the plurality of light emitting portions 20 can bond the third resin portion 60 to the first resin portion 30 and to the outer peripheral portion 10C of the upper surface of the substrate 10 .

[0099] The first resin portion 30 is not arranged at the peripheral portion 10C of the upper surface of the substrate 10, so that the adhesive layer 70 can be arranged continuously and curvedly on the peripheral portion 10C of the upper surface of the substrate 10, the side surface of the first structure 101 (the outermost side surface of the first resin portion 30), and the upper surface of the first structure 101 in a cross-sectional view. The cross section here refers to a cross section when cut along a plane passing through the center of the light-emitting device 1 and extending along one of the first direction X and the second direction Y in which the plurality of light-emitting portions 20 are arranged. The adhesive layer 70 is curved along the stepped portion of the peripheral portion 10C of the upper surface of the substrate 10 and the upper surface 30A of the first resin portion 30, so that light propagating in the light-transmitting adhesive layer 70 can be difficult to be emitted from the end 70E of the adhesive layer 70 to the outside of the light-emitting device 1.

[0100] It should be noted that the light emitting device 1 may also directly bond the lower surface of the wavelength conversion component 40 and the upper surface 21A of the semiconductor structure 21 without using the adhesive layer 70. For example, as described later, the layer located at the lower layer of the wavelength conversion component 40 is made into a softenable component. Thus, when the second structure 102 is arranged on the first structure 101, the first structure 101 and the second structure 102 can also be bonded by softening and curing the layer.

[0101] Next, refer to Figures 4A to 6D A method for manufacturing the light emitting device according to the first embodiment will be described.

[0102] The method for manufacturing a light emitting device according to the first embodiment includes: a step of preparing a structure; a step of preparing a mold; a step of disposing a first resin portion; and a step of removing an element substrate from a light source portion.

[0103] <Steps for preparing the structure>

[0104] like Figure 4A and Figure 4B As shown, the structure 100 includes a substrate 10 and a light source unit 103 disposed on the substrate 10. The substrate 10 includes a plurality of pairs of first wiring units 11 on the upper surface as described above. The light source unit 103 includes an element substrate 200 and a plurality of light emitting units 20. The plurality of light emitting units 20 are disposed on the element substrate 200 in a manner separated from each other in the first direction X and the second direction Y. Each light emitting unit 20 includes a semiconductor structure 21 and a pair of electrode units 22 disposed on the second surface 21B of the semiconductor structure 21 as described above. The semiconductor structure 21 is formed on the element substrate 200 by, for example, MOCVD (metal organic chemical vapor deposition). After a semiconductor film is grown on the element substrate 200, the semiconductor film is separated into a plurality of semiconductor structures 21 on the element substrate 200 by, for example, etching by RIE (Reactive Ion Etching). The first surface 21A of the semiconductor structure 21 faces the element substrate 200. The pair of electrode portions 22 are electrically connected to the pair of first wiring portions 11 of the substrate 10 via, for example, the above-mentioned bonding member 80 .

[0105] <Mold preparation process>

[0106] like Figure 4C As shown in FIG. 1 , the mold 300 includes an upper mold 301 and a lower mold 302. The upper mold 301 has a concave portion 301A. Figure 4C and Figure 4D In the figure, the second wiring portion 12 on the lower surface of the substrate 10 disposed in the structure 100 of the mold 300 is omitted.

[0107] <Step of arranging the first resin portion>

[0108] The structure 100 is disposed between the upper mold 301 and the lower mold 302. The structure 100 is supported on the lower mold 302 with the lower surface of the substrate 10 facing the upper surface of the lower mold 302. The light source unit 103 is disposed in the recess 301A of the upper mold 301 with the upper surface 200A of the element substrate 200 facing upward.

[0109] Next, the upper surface 200A of the element substrate 200 is covered with the covering member 303. Figure 4CIn the example shown, a covering member 303 is pre-arranged on the inner wall surface of the recess 301A, and at least the upper surface 200A of the element substrate 200 is covered by the covering member 303. In addition, a part of the covering member 303 extends to the outside of the recess 301A and is clamped between the lower end of the upper mold 301 and the upper surface of the lower mold 302. The covering member 303 is embedded in at least the upper part of the element substrate 200. Specifically, in addition to the upper surface 200A of the element substrate 200, the covering member 303 may also cover the upper part 200C1 of the side surface 200C of the element substrate 200 located on the upper surface 200A side. The covering member 303 may also cover the lower part 200C2 of the side surface 200C of the element substrate 200 located on the lower surface 200B side. The lower surface 200B of the element substrate 200 and the second surface 21B of the semiconductor structure 21 are not covered by the coating member 303 and are exposed in the space within the mold 300. The coating member 303 is, for example, a resin film made of a fluorine-based material. The thickness of the coating member 303 is, for example, not less than 100 μm and not more than 300 μm. In the case where the coating member 303 is a resin film, by using a resin film thicker than a conventional resin film (for example, a resin film for demolding used in mold molding) for the coating member 303, the unevenness tracking property of the coating member 303 is improved. As a result, the resin material 130 can be reduced from flowing between the upper surface 200A of the element substrate 200 and the coating member 303.

[0110] In a state where at least the upper surface 200A of the element substrate 200 is covered by the covering member 303, as shown in FIG. Figure 4D As shown in FIG. 1 , a resin material 130 having fluidity is supplied into the mold 300. For example, a liquid resin material 130 is supplied into the mold 300. Then, for example, the resin material 130 is cured by heating. After the resin material 130 is cured, the upper mold 301 is moved upward to remove the covering member 303. Figure 4E As shown, the first resin portion 30 solidified by the resin material 130 is disposed at least between the second surface 21B of each semiconductor structure 21 and the upper surface of the substrate 10. The first resin portion 30 may also be disposed between the lower surface 200B of the element substrate 200 and the upper surface of the substrate 10. The first resin portion 30 disposed between the lower surface 200B of the element substrate 200 and the upper surface of the substrate 10 can cover the side surface of the light emitting portion 20.

[0111] The first resin portion 30 is formed, for example, by transfer molding or compression molding. For example, when the first resin portion 30 is formed by compression molding, after the substrate 10 is disposed on the upper surface of the lower mold, a resin material 130 having fluidity is disposed on the upper surface of the substrate 10. Thereafter, the upper mold is closed, and the uncured resin material 130 is compressed and molded.

[0112] <Step of removing the element substrate from the light source section>

[0113] After the first resin portion 30 is disposed, the element substrate 200 is removed from the light source portion 103. Figure 4F As shown, in the first structure 101 after the element substrate 200 is removed, the first surface 21A of the semiconductor structure 21 and the upper surface 30A of the first resin portion 30 are exposed.

[0114] In the step of preparing the structure 100, for example, the element substrate 200 is a sapphire substrate and the semiconductor structure 21 contains gallium nitride (GaN). In this case, in the step of removing the element substrate 200 from the light source unit 103, for example, the element substrate 200 can be removed by laser lift-off.

[0115] In the laser lift-off method, laser is irradiated from the upper surface 200A side of the element substrate 200 toward the first surface 21A of the semiconductor structure 21 (the interface between the lower surface 200B of the element substrate 200 and the first surface 21A of the semiconductor structure 21). The laser has a wavelength that transmits the element substrate 200 and is in the absorption region relative to the semiconductor structure 21. The laser is, for example, light with a peak emission wavelength of not less than 190 nm and not more than 380 nm. Gallium nitride absorbs the energy of the laser and thermally decomposes. By irradiation with laser, gallium nitride is decomposed into nitrogen and gallium on the first surface 21A, so that the element substrate 200 is peeled off from the semiconductor structure 21. At this time, the gas (nitrogen) generated during the decomposition can cause the element substrate 200 to be peeled off from a portion of the first resin portion 30.

[0116] In reference Figure 4D In the described process of disposing the first resin portion 30, the upper surface 200A of the element substrate 200 is covered by the covering member 303, and therefore, the first resin portion 30 is not disposed on the upper surface 200A of the element substrate 200. Alternatively, even if the resin material 130 flows between the upper surface 200A of the element substrate 200 and the covering member 303, the amount of the first resin portion 30 disposed on the upper surface 200A of the element substrate 200 can be reduced compared to the case where the covering member 303 is not used. By not disposing the first resin portion 30 on the upper surface 200A of the element substrate 200, or by reducing the amount of the first resin portion 30 disposed on the upper surface 200A of the element substrate 200, it is possible to reduce the absorption or scattering of the laser by the first resin portion 30 on the upper surface 200A of the element substrate 200 during the above-mentioned laser lift-off method. As a result, uneven irradiation of the laser can be reduced, and the element substrate 200 can be easily removed from the light source unit 103.

[0117] When the resin material 130 flows between the upper surface 200A of the element substrate 200 and the covering member 303, it is preferable to provide a process of removing the first resin portion 30 disposed on the upper surface 200A of the element substrate 200. For example, the first resin portion 30 disposed on the upper surface 200A of the element substrate 200 can be removed by wet sandblasting. In the wet sandblasting, a solution containing an abrasive can be sprayed toward the upper surface 200A of the element substrate 200, and the first resin portion 30 disposed on the upper surface 200A of the element substrate 200 can be removed by using the impact force. When the amount of the first resin portion 30 disposed on the upper surface 200A of the element substrate 200 is large, the removal efficiency of the first resin portion 30 is improved by increasing the spray force of the solution containing an abrasive. However, if the spray force of the solution containing an abrasive is increased, the upper surface 200A of the element substrate 200 is easily damaged, and the laser light in the above-mentioned laser lift-off method is easily scattered or reflected on the upper surface 200A of the element substrate 200. As a result, a portion of the semiconductor layer sometimes remains in an undecomposed state at the interface between the lower surface 200B of the element substrate 200 and the first surface 21A of the semiconductor structure 21. If the element substrate 200 is removed in this state, stress is applied to the portion of the semiconductor layer remaining in an undecomposed state, and the semiconductor layer sometimes has defects.

[0118] According to the present embodiment, in the process of configuring the first resin portion 30, the upper surface 200A of the element substrate 200 is covered by the covering member 303, so that even if the resin material 130 is arranged on the upper surface 200A of the element substrate 200, its amount can be reduced. Therefore, the ejection force of the solution containing the abrasive can be weakened, and the upper surface 200A of the element substrate 200 is not easily damaged, and the scattering or reflection of the laser on the upper surface 200A of the element substrate 200 during the laser lift-off method can be reduced. As a result, the uneven irradiation of the laser can be reduced, and the element substrate 200 can be easily removed from the light source unit 103.

[0119] As a material of the first resin portion 30 suitable for peeling off the element substrate 200 based on the laser lift-off method, silicone resin or epoxy resin can be used. After irradiation with laser, for example, the element substrate 200 can be sucked and lifted upward by a nozzle to peel the element substrate 200 from the light-emitting portion 20 and the first resin portion 30. At this time, the first resin portion 30 can also be pulled upward by the element substrate 200. As a result, the force of lifting the first resin portion 30 is applied to the periphery of the semiconductor structure 21, which may cause defects in the periphery of the semiconductor structure 21. The adhesion between silicone resin and the element substrate 200 is weaker than that of epoxy resin. Therefore, compared with the case of using epoxy resin, if silicone resin is used as the material of the first resin portion 30, it is not easy to be pulled by the element substrate 200, and it is not easy to cause defects in the periphery of the semiconductor structure 21. Preferably, as the silicone resin, a silicone modified resin such as SMC resin can be used. The hardness of silicone modified resins such as SMC resin is higher than that of epoxy resin. Therefore, compared with the case of using epoxy resin, if a silicon-modified resin such as SMC resin is used as the material of the first resin portion 30 , the impact when the element substrate 200 is peeled off is stronger, and the first resin portion 30 is less likely to crack.

[0120] In the laser lift-off method, the laser is also irradiated onto the upper surface 30A of the first resin portion 30. As a result, the light absorbing portion 32 described above can be formed on the upper surface 30A side of the first resin portion 30. The metal oxide (e.g., titanium oxide) contained in the first resin portion 30 absorbs the energy of the laser and changes, thereby forming the light absorbing portion 32 with high light absorptivity on the upper surface 30A side of the first resin portion 30.

[0121] Thus, the first structure 101 can be obtained. It should be noted that in this specification, a structure that has undergone a grinding process or a roughening process described later, which is performed after the process of removing the element substrate from the light source unit, is sometimes described as the first structure 101. It should be noted that the above-mentioned structure 100 and the first structure 101 can also be prepared by transfer including purchase.

[0122] <Step of Removing a Part of the First Surface Side of the Semiconductor Structure and a Part of the First Resin Part>

[0123] The method for manufacturing the light emitting device of the first embodiment may further include a step of removing a portion of the first surface 21A side of the semiconductor structure 21 and a portion of the first resin portion 30 after removing the element substrate 200 .

[0124] When the element substrate 200 is removed, cracks may be generated on the first surface 21A of the semiconductor structure 21. If cracks are generated on the first surface 21A of the semiconductor structure 21, there is a possibility that the light-emitting characteristics of the light-emitting portion 20 are reduced, and the cracks are extended when the light-emitting device 1 is operated, and the light-emitting portion 20 may not light up. Therefore, it is preferable to remove a portion of the first surface 21A side of the semiconductor structure 21 (a portion in the thickness direction) after removing the element substrate 200, thereby removing the cracks on the first surface 21A of the semiconductor structure 21.

[0125] For example, while a processing liquid is dripped on the first surface 21A of the semiconductor structure 21 and the upper surface 30A of the first resin portion 30, a rotating disc-shaped grinding member is brought into contact with the first surface 21A of the semiconductor structure 21 and the upper surface 30A of the first resin portion 30 to grind and remove a portion of the first surface 21A side of the semiconductor structure 21. At this time, a portion of the upper surface 30A side of the first resin portion 30 is also ground and removed at the same time. The grinding member includes a soft grindstone. As a result, the roughness and defect of the first surface 21A of the semiconductor structure 21 can be reduced compared to the case where a grinding member including a hard grindstone is used.

[0126] The first surface 21A of the semiconductor structure 21 and the upper surface 30A of the first resin portion 30 are simultaneously ground using a disk-shaped grinding member. In terms of the grinding amount, for example, a thickness of 30% or less is ground relative to the thickness of the semiconductor structure 21 before grinding. After grinding, the first surface 21A of the semiconductor structure 21 and the upper surface 30A of the first resin portion 30 are located on the same plane.

[0127] For example, when the first resin portion 30 has a convex portion on the upper surface 30A side, the convex portion may be removed by blade processing or laser processing instead of performing the above-mentioned grinding step.

[0128] <Roughening of the first surface of the semiconductor structure>

[0129] The manufacturing method of the light-emitting device of the first embodiment can perform a roughening treatment on the first surface 21A of the semiconductor structure 21 after the above-mentioned grinding process. Thereby, the light extraction efficiency from the first surface 21A of the semiconductor structure 21 can be improved. The arithmetic mean roughness of the first surface 21A before the roughening treatment is, for example, greater than 0 μm and less than 0.5 μm, and the arithmetic mean roughness of the first surface 21A after the roughening treatment is, for example, greater than 0.5 μm and less than 10 μm. For example, the roughening treatment can be performed by an RIE method based on a chlorine-containing gas or wet etching using an alkaline solution such as TMAH (Tetramethylammonium hydroxide).

[0130] <Step of arranging the second structure>

[0131] Then, if Figure 6B As shown, the method for manufacturing the light emitting device of the first embodiment further comprises: in the first structure 101 obtained after removing the element substrate 200, a step of arranging the second structure 102 on the first surface 21A of the semiconductor structure 21. The second structure 102 has a plurality of wavelength conversion components 40, and a second resin portion 50 that holds the plurality of wavelength conversion components 40 and is arranged between the plurality of wavelength conversion components 40. As described above, the wavelength conversion component 40 has a phosphor layer 41 arranged on the first surface 21A of the semiconductor structure 21, a light diffusion layer 42 arranged on the phosphor layer 41, and a light-transmitting layer 43 arranged on the light diffusion layer 42.

[0132] The second structure 102 can be prepared by transfer including purchase. Alternatively, the process of preparing the second structure 102 can include Figure 5A to Figure 5D The process shown.

[0133] exist Figure 5A In the process shown, the wavelength conversion sheet 140 is disposed on the support 400. The wavelength conversion sheet 140 includes a phosphor layer 41 disposed on the support 400, a light diffusion layer 42 disposed on the phosphor layer 41, and a light-transmitting layer 43 disposed on the light diffusion layer 42.

[0134] exist Figure 5B In the process shown, the wavelength conversion sheet 140 is separated into a plurality of wavelength conversion components 40. For example, the wavelength conversion sheet 140 is separated into a plurality of wavelength conversion components 40 by forming grooves 140A on the wavelength conversion sheet 140 by blade processing or laser processing. The grooves 140A penetrate the phosphor layer 41, the light diffusion layer 42, and the light-transmitting layer 43, and reach the upper surface of the support portion 400.

[0135] exist Figure 5C In the process shown, the second resin portion 50 is disposed on the support portion 400 so as to cover the plurality of wavelength conversion members 40. The second resin portion 50 is formed by compression molding using a mold, etc. The second resin portion 50 is also disposed in contact with the groove 140A on the support portion 400. Figure 5C The second resin portion 50 shown also covers the upper surface of the light-transmitting layer 43 .

[0136] Next, the structure 500 on the support portion 400 is Figure 5D In the process shown, the second resin portion 50 is cut and separated into a plurality of second structures 102, for example, by blade processing or laser processing. In the second structure 102, the second resin portion 50 is arranged between adjacent wavelength conversion components 40 and covers the upper surface of the wavelength conversion component 40, that is, the upper surface of the light-transmitting layer 43.

[0137] It should be noted that, in the process of forming the groove 140A, the groove 140A may reach a part of the support portion 400, forming a depression on the upper surface of the support portion 400. In this case, in the process of configuring the second resin portion 50, the second resin portion 50 may be configured in the depression. Figure 5C The structure 500 or Figure 5D The second structure 102 shown is obtained by removing the support portion 400, and removing the second resin portion 50 disposed in the recess by grinding or the like on the side (the phosphor layer 41 side) where the support portion 400 is removed. Thus, when the phosphor layer 41 side of the second structure 102 is disposed opposite to the first structure 101, the second structure 102 can be less likely to be disposed in an inclined position.

[0138] In addition, as a modified example, when the second structure 102 is disposed on the first structure 101, a supporting substrate such as glass may be disposed on the upper surface side (light-transmitting layer 43 side) of the second structure 102. Figure 5D The upper surface of the second structure 102 obtained in the process. If the second structure 102 is formed into the second resin portion 50 by compression molding or the like, warping may occur due to the difference in linear expansion coefficient between the wavelength conversion member 40 and the second resin portion 50. Therefore, by arranging a supporting substrate such as glass on the upper surface side of the second structure 102, the second structure 102 can be arranged on the first structure 101 in a state where the warping is reduced.

[0139] <Step of arranging the third resin portion on the substrate>

[0140] The method for manufacturing the light emitting device of the first embodiment may further include: after the second structure body 102 is arranged, Figure 6C As shown, the third resin portion 60 covering the first structure body 101 and the second structure body 102 is disposed on the substrate 10 . Figure 6C The third resin portion 60 shown also covers the upper surface of the second resin portion 50 covering the upper surface of the light-transmitting layer 43 .

[0141] <Step of Simultaneously Removing the Third Resin Part, the Second Resin Part Covering the Upper Surface of the Light Transmitting Layer, and a Part of the Upper Surface Side of the Light Transmitting Layer>

[0142] The manufacturing method of the light emitting device of the first embodiment may further include: a step of simultaneously removing the third resin portion 60, the second resin portion 50 covering the upper surface of the light transmissive layer 43, and a portion of the upper surface side of the light transmissive layer 43. It should be noted that the term "simultaneously" here means that the third resin portion 60, the second resin portion 50 covering the upper surface of the light transmissive layer 43, and a portion of the upper surface side of the light transmissive layer 43 are removed during a series of actions from the start of removal to the end of removal. For example, the third resin portion 60, the second resin portion 50 covering the upper surface of the light transmissive layer 43, and a portion of the upper surface side of the light transmissive layer 43 are simultaneously removed from the upper surface side of the third resin portion 60 using a grinding device or the like. Through this step, as Fig.6D As shown, the upper surface of the light-transmitting layer 43 is exposed from the second resin portion 50 and the third resin portion 60. The upper surface of the light-transmitting layer 43, the upper surface of the second resin portion 50, and the upper surface of the third resin portion 60 are located on the same plane.

[0143] When exposing the upper surface of the light-transmitting layer 43, the number of steps can be reduced by removing the second resin portion 50 and the third resin portion 60 at the same time, compared to the case where each resin portion is removed. In addition, by removing a portion of the upper surface side of the light-transmitting layer 43, the thickness of the light-transmitting layer 43 becomes thinner. In the process of removing the second resin portion 50 and the third resin portion 60, the light-transmitting layer 43 functions as a layer of the light-diffusing layer 42 that is not removed. Since the light-diffusing layer 42 is not removed, the deviation in the thickness of the light-diffusing layer 42 can be reduced. Thus, the deviation in the light-diffusing function between the light-emitting portions 20 can be reduced. In addition, when viewed from above, the deviation in the color tone of each light-emitting portion 20 when not emitting light can be reduced, and a light-emitting device with an excellent appearance when not emitting light can be made.

[0144] Thereafter, for example, the third resin portion 60 and the substrate 10 are cut using a blade in a region where the first resin portion 30 is not arranged, thereby individualizing the substrate 10 into individual pieces. Figure 2 The light emitting device 1 is shown.

[0145] In addition, Figure 6B In the step of arranging the second structure body 102 shown, the second structure body 102 can be arranged on the first surface 21A of the semiconductor structure 21 and on the first resin portion 30 via the adhesive layer 70 .

[0146] like Fig. 6AAs shown, for example, a liquid adhesive layer 70 is supplied to the upper surface of the substrate 10, the side surface of the first resin part 30, the upper surface of the first resin part 30, and the first surface 21A of the semiconductor structure 21 by a spray coating method and then cured. The cured adhesive layer 70 is continuously and curvedly arranged on the upper surface of the substrate 10, the side surface of the first resin part 30, the upper surface of the first resin part 30, and the first surface 21A of the semiconductor structure 21. As described above, the adhesive layer 70 has light transparency. The adhesive layer 70 is curved along the step portion of the upper surface of the substrate 10 and the upper surface of the first resin part 30, thereby making it difficult for light propagating in the light-transmitting adhesive layer 70 to be emitted from the end of the adhesive layer 70 to the outside of the light-emitting device.

[0147] It should be noted that in the manufacturing method of the light-emitting device disclosed in the present invention, the second structure 102 can be directly bonded to the first structure 101 without using the adhesive layer 70. As an example, the layer located below the wavelength conversion component 40 is made into a softenable component. Thus, when the second structure 102 is arranged on the first structure 101, the first structure 101 and the second structure 102 can also be joined by softening and curing the layer. For example, when preparing the second structure 102, the phosphor layer 41 in the B stage state can also be arranged in the lower layer of the wavelength conversion component 40. After the wavelength conversion component 40 is arranged on the semiconductor structure 21, the phosphor layer 41 is heated and cured to the C stage state.

[0148] In the manufacturing method of the light-emitting device of the first embodiment, the Shore hardness of the first resin part 30 after curing is preferably HSD70 or more. In addition, the difference between the linear expansion coefficient of the first resin part 30 after curing and the linear expansion coefficient of the semiconductor structure 21 is preferably 30 ppm or less. By using the first resin part 30 having the above-mentioned Shore hardness, the first resin part 30 can be made less likely to crack or the like relative to the impact strength when the element substrate 200 is peeled off. In addition, by reducing the difference between the linear expansion coefficient of the first resin part 30 and the linear expansion coefficient of the semiconductor structure 21, in the process of removing the element substrate 200, when heat is applied to the semiconductor structure 21 by laser, the first resin part 30 is easily deformed in a manner that follows the expansion or contraction of the semiconductor structure 21. As a result, the first resin part 30 can be made less likely to crack or the like.

[0149] [Second embodiment]

[0150] Reference Figure 7 and Figure 8 A light emitting device 2 according to a second embodiment will be described.

[0151] like Figure 7 As shown, the light emitting device 2 of the second embodiment includes, for example, 25 light emitting units 20. In the first direction X and the second direction Y, the light emitting units 20 are arranged in a pattern of 5×5.

[0152] In the light-emitting device 2 , the structure of the second structure body 202 mainly differs from the second structure body 102 of the light-emitting device 1 of the first embodiment.

[0153] The second structure 202 has a peripheral wavelength conversion member 40A arranged outside the plurality of light emitting sections 20 in a plan view. The peripheral wavelength conversion member 40A has the same structure as the wavelength conversion member 40 described above, and has a phosphor layer 41, a light diffusion layer 42, and a light-transmitting layer 43. In a plan view, the plurality of peripheral wavelength conversion members 40A surround the plurality of light emitting sections 20 and the plurality of wavelength conversion members 40 arranged on the plurality of light emitting sections 20. The second resin portion 50 is arranged between the peripheral wavelength conversion member 40A and the wavelength conversion member 40 adjacent to the peripheral wavelength conversion member 40A.

[0154] The light emitting unit 20 is not disposed below the peripheral wavelength conversion member 40A. A portion (peripheral portion) of the first resin portion 30 and the third resin portion 60 are disposed below the peripheral wavelength conversion member 40A. The third resin portion 60 covers the side surface of the first resin portion 30 at the peripheral portion 10C of the upper surface of the substrate 10.

[0155] There is no light emitting unit 20 below the peripheral wavelength conversion member 40A. Therefore, light emitted from the light emitting unit 20 located inside the peripheral wavelength conversion member 40A in a plan view is blocked by the first resin portion 30, the second resin portion 50, and the third resin portion 60 and is difficult to enter the peripheral wavelength conversion member 40A.

[0156] In addition, since the light emitting device 2 includes the peripheral wavelength conversion member 40A, the wavelength conversion member is arranged at the periphery when viewed from above, and the amount of the light reflective member arranged at the periphery is reduced. Therefore, compared with a light emitting device in which only the light reflective member is arranged at the periphery, the deviation in appearance between the peripheral area and the inner area surrounded by the peripheral area is alleviated, so that a light emitting device having an excellent appearance when not emitting light can be made.

[0157] [Third Embodiment]

[0158] Reference Fig. 9 A light emitting device 3 according to a third embodiment will be described.

[0159] The light emitting device 3 includes a first structure 101 and a second structure 203. The light emitting device 3 is different from the light emitting device 2 of the second embodiment mainly in that a cutout portion 500 is formed on the peripheral wavelength conversion component 40A of the second structure 203, an adhesive layer 70 is not arranged between the first structure 101 and the second structure 203, and the wavelength conversion component 40 is directly bonded to the light emitting portion 20.

[0160] The first resin portion 30 of the first structure body 101 includes a first inner portion 30C located between the plurality of light emitting portions 20 and a first outer peripheral portion 30D located outside the plurality of light emitting portions 20 in a plan view.

[0161] The second structure 203 includes a plurality of wavelength conversion members 40 and a second resin portion 50 disposed between the plurality of wavelength conversion members 40. The second resin portion 50 includes a second inner portion 50C disposed on the first inner portion 30C of the first resin portion 30 and a second outer peripheral portion 50D disposed on the first outer peripheral portion 30D of the first resin portion 30.

[0162] Similar to the second embodiment, the plurality of wavelength conversion components 40 have peripheral wavelength conversion components 40A arranged outside the plurality of light emitting units 20 in a plan view, and no light emitting unit 20 is arranged below the peripheral wavelength conversion components 40A. The third resin portion 50E covers the side surface of the first peripheral portion 30D of the first resin portion 30 on the peripheral portion 10C of the upper surface of the substrate 10. The peripheral wavelength conversion component 40A is arranged on the third resin portion 50E. In this embodiment, the second resin portion 50C, the second resin portion 50D, and the third resin portion 50E are made of the same material and are connected to each other.

[0163] First, if Figure 4B As shown, a structure 100 including a substrate 10 and a light source unit 103 is prepared. It should be noted that, as an example, the light source unit 103 of the present embodiment includes a 5×5 light-emitting unit 20. The light source unit 103 is manufactured, for example, as follows. First, a single-chip substrate in a wafer state in which a plurality of predetermined light source units of the light source unit 103 are connected after being singulated is prepared. Each predetermined light source unit includes a 5×5 light-emitting unit 20 and an element substrate 200. Next, the single-chip substrate is cut and singulated, thereby obtaining a plurality of light source units 103. At this time, when the single-chip substrate is cut, a wide margin is set in the area where the single-chip substrate is cut so that the stress during cutting is not easy to affect the light-emitting unit 20. In other words, when viewed from above, a wide space is ensured between the position where the single-chip substrate is cut and the adjacent light-emitting unit 20.

[0164] Next, the first resin portion 30 is arranged between the lower surface 200B of the element substrate 200 and the upper surface of the substrate 10. At this time, due to the margin set when the individual substrates are cut, the width of the first outer peripheral portion 30D arranged at the outer peripheral portion of the lower surface 200B of the element substrate 200 is larger than the width of the first inner portion 30C located between the plurality of light-emitting portions 20. For example, the width of the first inner portion 30C is greater than 1 μm and less than 30 μm, and the width of the first outer peripheral portion 30D is greater than 50 μm and less than 500 μm. Therefore, when the light-absorbing portion 32 is formed on the upper surface side of the first resin portion 30 by irradiation of the above-mentioned laser, the width of the light-absorbing portion 32 of the first outer peripheral portion 30D is greater than the width of the light-absorbing portion 32 of the first inner portion 30C. As a result, in the appearance of the light-emitting device when non-light-emitting is observed from the light-emitting surface side, the color tone of the light-absorbing portion 32 of the first outer peripheral portion 30D is easily conspicuous, and there is a possibility that a deviation in color tone occurs between the outer peripheral portion and the inner portion of the light-emitting device.

[0165] The light emitting device 3 of the third embodiment has a cutout portion 500 below the peripheral wavelength conversion component 40A. By providing the cutout portion 500 below the peripheral wavelength conversion component 40A, the width of the lower surface of the second peripheral portion 50D becomes wider. In more detail, the width of the lower surface of the second peripheral portion 50D arranged between the peripheral wavelength conversion component 40A and the adjacent wavelength conversion component 40 becomes wider. Thus, compared with the case where the cutout portion 500 is not provided, a larger area of ​​the upper surface of the first peripheral portion 30D can be covered by the second peripheral portion 50D. The second peripheral portion 50D preferably covers the entire upper surface of the light absorbing portion 32. Thus, the color tone of the light absorbing portion 32 of the peripheral portion when not emitting light can be made less noticeable, and a light emitting device 3 with an excellent appearance when not emitting light can be made. In addition, in Fig. 9 In the cross-sectional view shown, by providing the cutout 500 only below the peripheral wavelength conversion component 40A, in other words, by not providing the cutout 500 above the peripheral wavelength conversion component 40A, the width of the upper surface of the second peripheral portion 50D can be made equal to the width of the upper surface of the second inner portion 50C. That is, by providing the cutout 500 only below the peripheral wavelength conversion component 40A, the width of the lower surface of the second peripheral portion 50D can be widened without changing the width of the upper surface of the second peripheral portion 50D. As a result, when not emitting light, the widths of the second resin portion 50C and the second resin portion 50D when viewed from above can be made equal, and the color tone of the light absorbing portion 32 of the peripheral portion can be made less conspicuous. As a result, a light emitting device 3 having an excellent appearance when not emitting light can be manufactured.

[0166] In addition, since the volume of the second resin portion 50 on the outer periphery of the first structure 101 increases, the light emitted by the light emitting portion 20 located outside is easily reflected toward the upper light emitting surface side by the second outer periphery 50D of the second resin portion 50. Thus, the light emitted from the outer surface of the peripheral wavelength conversion member 40A to the outside of the light emitting device 3 can be reduced.

[0167] In addition, in the present embodiment, the wavelength conversion member 40 is directly bonded to the light emitting unit 20. In other words, no adhesive member or the like is arranged between the wavelength conversion member 40 and the light emitting unit 20. As a result, the light emitted from the light emitting unit 20 propagates inside the adhesive member and spreads in the horizontal direction, and the light can be reduced from being emitted to the side of the adjacent light emitting unit 20. As a result, a light emitting device with high contrast can be manufactured.

[0168] exist Fig. 9 In the light emitting device 3 shown, the third resin portion 50E is arranged outside the first peripheral portion 30D. It should be noted that the light emitting device of the present embodiment may not include the third resin portion 50E. In this case, for example, instead of the third resin portion 50E, the first peripheral portion 30D is arranged to reach the outer side surface of the light emitting device 3. In addition, the upper surface of the first resin portion 30D includes a region where the light absorbing portion 32 is arranged and a region where the light absorbing portion 32 is not arranged. For example, on the upper surface of the first resin portion 30D, the region where the light absorbing portion 32 is arranged is an inner annular region adjacent to the light emitting portion 20, and the region where the light absorbing portion 32 is not arranged is a region arranged outside the region where the light absorbing portion 32 is arranged. In this case, the second peripheral portion 50D is arranged on the region where the light absorbing portion 32 is arranged, and the peripheral wavelength conversion component 40A is arranged on the region where the light absorbing portion 32 is not arranged.

[0169] Reference Figures 10A to 10G A method for manufacturing the light emitting device according to the third embodiment will be described.

[0170] like Figure 10G As shown, the method for manufacturing a light emitting device according to the third embodiment includes a step of arranging a second structure body 203 on a first structure body 101 obtained after removing an element substrate 200 .

[0171] The step of disposing the second structure body 203 includes: a step of preparing the wavelength conversion sheet 140 ; ​​a step of forming a groove portion on the wavelength conversion sheet 140 ; ​​and a step of disposing the second resin portion 50 in the groove portion.

[0172] like Fig. 10AAs shown, in the process of preparing the wavelength conversion sheet 140, the wavelength conversion sheet 140 having the phosphor layer 41, the light-transmitting layer 43, and the light-diffusing layer 42 located between the phosphor layer 41 and the light-transmitting layer 43 is prepared. In the process of preparing the wavelength conversion sheet 140, the resin material of the phosphor layer 41 is in the B-stage state, and the resin materials of the light-transmitting layer 43 and the light-diffusing layer 42 are in the C-stage state. The B-stage state of the resin material of the phosphor layer 41 is maintained until the resin material of the phosphor layer 41 is cured by the second heat treatment process described later. For example, the wavelength conversion sheet 140 is obtained by performing a heat treatment process after laminating the uncured light-diffusing layer 42 and the uncured light-transmitting layer 43, thereby obtaining the light-diffusing layer 42 and the light-transmitting layer 43 that are in the C-stage state and formed integrally with each other. Thereafter, the phosphor layer 41 in the B-stage state is laminated to the light-diffusing layer 42 side, thereby obtaining the wavelength conversion sheet 140. The wavelength conversion sheet 140 is supported by a supporting member so that the fluorescent layer 41 is relatively upward. Fig. 10A The upper surface of the phosphor layer 41 is set as the first sheet surface 140B of the wavelength conversion sheet 140. In the step of arranging the second structure 203 on the first structure 101, the first sheet surface 140B faces the first structure 101.

[0173] The manufacturing method of the light emitting device of the present embodiment may include: a first heat treatment step of heat-treating the phosphor layer 41 in the wavelength conversion sheet 140 under a first condition. The resin material of the phosphor layer 41 after the first heat treatment step is in a B-stage state. By performing the first heat treatment step on the wavelength conversion sheet 140, it is possible to maintain a predetermined adhesive force on the surface of the phosphor layer 41 while improving the hardness of the phosphor layer 41. By improving the hardness of the phosphor layer 41, when the groove is formed by a blade or the like later, it is possible to reduce the collapse of the groove, etc. The first heat treatment step may also be referred to as a step of adjusting the hardness of the phosphor layer 41. In addition, after the step of preparing the wavelength conversion sheet 140, in other words, after the phosphor layer 41 and the light diffusion layer 42 are bonded together, the first heat treatment step is performed, thereby making it possible to bond the phosphor layer 41 having a higher adhesive force than after the first heat treatment step to the light diffusion layer 42, and thus, the adhesion between the phosphor layer 41 and the light diffusion layer 42 can be improved. This can reduce the occurrence of peeling or the like at the interface between the fluorescent material layer 41 and the light diffusion layer 42 when the grooves are formed.

[0174] The first condition in the first heat treatment step includes a first temperature and a first heating time. For example, the first temperature can be set to 80° C. to 130° C., and the first heating time can be set to 10 minutes to 120 minutes.

[0175] In the present embodiment, for example, the viscosity of the resin material of the phosphor layer 41 after the first heat treatment step is 20% to 90% of the viscosity of the resin material of the phosphor layer 41 before the first heat treatment step.

[0176] Then, if Fig. 10B and Fig. 10C As shown, grooves are formed on the wavelength conversion sheet 140. The step of forming the grooves on the wavelength conversion sheet 140 includes the step of forming a plurality of first grooves 141 from the first sheet surface 140B side to the wavelength conversion sheet 140. Fig. 10B As shown in FIG. 1 , when viewed from above, the plurality of first grooves 141 extend along the first direction X and the second direction Y. Fig. 10C As shown, the plurality of first grooves 141 penetrate the phosphor layer 41 and the light diffusion layer 42 from the first sheet surface 140B and reach a portion of the light-transmitting layer 43. The bottom of the first groove 141 is located below the interface between the light diffusion layer 42 and the light-transmitting layer 43. Among the plurality of first grooves 141, the first groove 141 located at the periphery when viewed from above is referred to as the peripheral first groove 141A.

[0177] like Fig. 10D and Fig.10E As shown in FIG. 1 , the step of forming the grooves on the wavelength conversion sheet 140 further includes the step of forming the second groove 142 extending from the outer first groove 141A to the outside of the outer first groove 141A from the first sheet surface 140B side to the wavelength conversion sheet 140. The depth of the second groove 142 from the first sheet surface 140B is shallower than the depth of the first groove 141 from the first sheet surface 140B. The bottom of the second groove 142 is located in the phosphor layer 41.

[0178] The second groove portion 142 extends in the first direction X and the second direction Y along the peripheral first groove portion 141A. The second groove portion 142 extending in the second direction Y is continuous with the peripheral first groove portion 141A in the first direction X. The second groove portion 142 extending in the first direction X is continuous with the peripheral first groove portion 141A in the second direction Y. Among the plurality of groove portions, the peripheral groove portion 143A located at the periphery when viewed from above is composed of the peripheral first groove portion 141A and the second groove portion 142. Among the plurality of groove portions, the inner groove portion 143B located on the inner side of the peripheral groove portion 143A when viewed from above is composed of the first groove portion 141 and does not include the second groove portion 142. The width of the opening of the peripheral groove portion 143A on the first sheet surface 140B side is larger than the width of the opening of the inner groove portion 143B on the first sheet surface 140B side.

[0179] The first groove portion 141 and the second groove portion 142 can be formed by, for example, blade processing or laser processing.

[0180] The process of forming the first groove 141 and the second groove 142 is not limited to forming the second groove 142 after forming the first groove 141. The first groove 141 may be formed after forming the second groove 142. Alternatively, the first groove 141 and the second groove 142 may be formed simultaneously.

[0181] After the first groove portion 141 and the second groove portion 142 are formed, Fig.10F As shown, the wavelength conversion sheet 140 is arranged on the first structure 101. In the process of arranging the wavelength conversion sheet 140 on the first structure 101, the wavelength conversion sheet 140 is arranged in such a manner that the phosphor layer 41 is located on the light emitting portion 20, the inner groove portion 143B is located on the first inner portion 30C of the first resin portion 30, and the outer peripheral groove portion 143A is located on the first outer peripheral portion 30D of the first resin portion 30. The upper surface of the first outer peripheral portion 30D is opposite to the opening of the outer peripheral groove portion 143A.

[0182] Next, a second heat treatment process is performed to heat treat the resin material of the phosphor layer 41 under a second condition and solidify the resin material of the phosphor layer 41. Through the heating in the second heat treatment process, the resin material of the phosphor layer 41 is temporarily softened from the B stage state and then solidified to the C stage state. The light diffusion layer 42, which is already in the C stage state, is not softened in the second heat treatment process. Through this second heat treatment process, the phosphor layer 41 is fixed on the light emitting part 20. Thus, the light emitting part 20 and the phosphor layer 41 are directly bonded. In addition, the phosphor layer 41 and the light diffusion layer 42 are also fixed to each other. The second condition in the second heat treatment process includes a second temperature and a second heating time. For example, the second temperature can be set to be above 140°C and below 160°C, and the second heating time can be set to be above 100 minutes and below 200 minutes.

[0183] The process of disposing the second structure 203 includes: after disposing the wavelength conversion sheet 140 on the first structure 101, Figure 10G As shown in the figure, the process of placing the second resin member 50 in the outer peripheral groove portion 143A and the inner groove portion 143B. For example, after a liquid resin material is poured into the outer peripheral groove portion 143A and the inner groove portion 143B using a mold, the resin material is cured by heating, and the second resin member 50 is placed in the outer peripheral groove portion 143A and the inner groove portion 143B. The second outer peripheral portion 50D of the second resin portion 50 is placed in the outer peripheral groove portion 143A so as to cover the entire upper surface of the light absorbing portion 32. In addition, a part of the above-mentioned resin material covers the side surface of the first outer peripheral portion 30D of the first resin portion 30 as the third resin portion 50E.

[0184] In the process of disposing the second structure 203, after disposing the second resin portion 50, a portion of the light-transmitting layer 43 on the surface side opposite to the light-diffusing layer 42 is removed using, for example, a grinding device, so that the second resin portion 50 is exposed. Fig. 9 As shown, the second structure body 203 including a plurality of wavelength conversion members 40 and a second resin portion 50 disposed between the plurality of wavelength conversion members 40 is disposed on the first structure body 101 .

[0185] The process of disposing the second structure 203 may further include: after forming the groove on the wavelength conversion sheet 140 and before disposing the second resin part 50 in the groove, subjecting the wavelength conversion sheet 140 to plasma treatment. In this way, the filling property of the second resin part 50 into the groove can be improved. Fig.10F Specifically, after the wavelength conversion sheet 140 is disposed on the first structure 101 and before the second resin portion 50 is disposed in the groove portion, the wavelength conversion sheet 140 is preferably subjected to plasma treatment. By performing the plasma treatment before the second resin portion 50 is disposed in the groove portion, the variation in the filling property of the second resin portion 50 in the groove portion is reduced. In this case, for example, Fig.10F Plasma is irradiated on the upper side of the light-transmitting layer 43 in the wavelength conversion sheet 140, and surface treatment is performed near the opening of the groove portion located on the outer side surface of the wavelength conversion sheet 140. As a result, the wettability near the opening of the groove portion is improved, and the resin material that becomes the second resin portion 50 easily flows in from the opening of the groove portion. For example, by performing plasma treatment on the surface of the resin part, a polar functional group is formed on the surface of the resin part. As a result, the affinity between the resin part and other resin materials (for example, the resin material that becomes the second resin portion 50) is improved, and the wettability is improved. In addition, by performing plasma treatment, contaminated organic substances located on the surface of the resin part are removed, thereby improving the wettability of the surface of the resin part.

[0186] The manufacturing method of the light-emitting device of the third embodiment may further include: before the second structure 203 is arranged on the first structure 101 obtained after the element substrate 200 is removed, a step of removing a portion of the upper surface side of the first peripheral portion 30D of the first resin portion 30. As a result, the light absorption portion 32 on the upper surface side of the first peripheral portion 30D can be removed, and a light-emitting device 3 having an excellent appearance when not emitting light can be made. For example, a portion of the upper surface side of the first peripheral portion 30D can be removed by CO2 laser processing, blade processing, or injection of sublimated particles (for example, solid carbon dioxide), injection of microparticles (for example, micro-ice particle injection method), etc. It should be noted that in the case of performing the step of removing a portion of the upper surface side of the first peripheral portion 30D, the cutout portion 500 may not be formed on the peripheral wavelength conversion component 40A.

[0187] [Modifications]

[0188] In the light-emitting devices of the first to third embodiments, the first structure and the light source unit have a plurality of light-emitting units. It should be noted that the light source unit and the first structure may also have only one light-emitting unit. That is, the light source unit may have one light-emitting unit relative to one element substrate. In addition, the first structure may have a substrate, a light-emitting unit arranged on the upper surface of the substrate, and a first resin unit that holds the light-emitting unit and exposes the upper surface of the light-emitting unit.

[0189] The embodiments of the present disclosure are described above with reference to specific examples. However, the present disclosure is not limited to these specific examples. As long as the main purpose of the present disclosure is included, all the ways that those skilled in the art can appropriately design changes and implement based on the above-mentioned embodiments of the present disclosure belong to the scope of the present disclosure. In addition, within the scope of the idea of ​​the present disclosure, those skilled in the art can think of various variations and modifications, and these variations and modifications also belong to the scope of the present disclosure.

[0190] Description of Reference Numerals

[0191] 1~3 light emitting devices

[0192] 10 substrates

[0193] 11First wiring section

[0194] 12 Second wiring section

[0195] 13 Insulation substrate

[0196] 20 light emitting part

[0197] 21Semiconductor structure

[0198] 21A first page

[0199] 21B Side 2

[0200] 22 Electrode part

[0201] 30First resin part

[0202] 30C first inner part

[0203] 30D first outer periphery

[0204] 31 light reflecting part

[0205] 32 light absorption part

[0206] 40Wavelength conversion components

[0207] 41 Phosphor layer

[0208] 42 light diffusion layer

[0209] 43 light-transmitting layer

[0210] 50 Second resin part

[0211] 50C second inner part

[0212] 50D second outer periphery

[0213] 50E Third Resin Department

[0214] 60 Third resin part

[0215] 70 bonding layer

[0216] 80 Joint parts

[0217] 100 structures

[0218] 101 First Structure

[0219] 102 Second Structure

[0220] 103 Light source

[0221] 130 resin material

[0222] 140 Wavelength conversion sheet

[0223] 140B first sheet surface

[0224] 141 first groove

[0225] 141A Outer periphery first groove

[0226] 142 second groove

[0227] 143A Outer groove

[0228] 143B inner groove

[0229] 200 element substrate

[0230] 202, 203 Second structure

[0231] 300 mold

[0232] 301 upper mold

[0233] 301A concave part

[0234] 302 lower mold

[0235] 303 cladding parts

[0236] 400 support part

[0237] 500 incision section.

Claims

1. A method for manufacturing a light emitting device, comprising: A step of preparing a structure having a substrate and a light source unit, wherein the substrate has a plurality of pairs of wiring units on an upper surface, and the light source unit has an element substrate and a plurality of light-emitting units and is arranged on the substrate, wherein: Each of the light emitting portions comprises a semiconductor structure and a pair of electrode portions, the semiconductor structure comprising a first surface facing the element substrate and a second surface located on the opposite side of the first surface, the pair of electrode portions being arranged on the second surface of the semiconductor structure and being electrically connected to the pair of wiring portions of the substrate; A step of preparing a mold, wherein the mold has an upper mold and a lower mold; a step of arranging a first resin portion, wherein the structure is arranged between the upper mold and the lower mold, and a resin material is supplied into the mold in a state where the upper surface of the element substrate is covered by a covering member, and after the resin material is cured, the covering member is removed, thereby arranging the first resin portion between the second surface of each of the semiconductor structures and the upper surface of the substrate; a step of removing the element substrate from the light source portion.

2. The method for manufacturing a light emitting device according to claim 1, wherein: The step of arranging the first resin portion includes a step of removing the first resin portion arranged on the upper surface of the element substrate.

3. The method for manufacturing a light emitting device according to claim 2, wherein: In the step of removing the first resin portion, the first resin portion is removed by wet sandblasting.

4. The method for manufacturing a light emitting device according to any one of claims 1 to 3, wherein: Also available: A step of removing a portion of the first surface side of the semiconductor structure and a portion of the first resin portion after removing the element substrate.

5. The method for manufacturing a light emitting device according to any one of claims 1 to 3, wherein: In the step of preparing the structure, the element substrate is a sapphire substrate, the semiconductor structure contains gallium nitride, In the process of removing the element substrate from the light source portion, laser is irradiated from the upper surface side of the element substrate toward the first surface of the semiconductor structure, thereby decomposing the gallium nitride into nitrogen and gallium on the first surface, and the element substrate and a portion of the first resin portion are peeled off using the gas generated during the decomposition.

6. The method for manufacturing a light emitting device according to any one of claims 1 to 3, wherein: Also available: a step of disposing a second structure on the first surface of the semiconductor structure in the first structure obtained after removing the element substrate; The second structure includes a plurality of wavelength conversion members and a second resin portion that holds the plurality of wavelength conversion members and is disposed between the plurality of wavelength conversion members.

7. The method for manufacturing a light emitting device according to claim 6, wherein: The wavelength conversion member includes a fluorescent layer disposed on the first surface, a light diffusion layer disposed on the fluorescent layer, and a light-transmitting layer disposed on the light diffusion layer.

8. The method for manufacturing a light emitting device according to claim 7, wherein: The second resin portion covers the upper surface of the light-transmitting layer, and the method for manufacturing the light-emitting device further comprises: After the second structure is disposed on the first surface, a third resin portion covering the first structure and the second structure is disposed on the substrate; A step of simultaneously removing the third resin portion, the second resin portion covering the upper surface of the light-transmitting layer, and a portion of the upper surface side of the light-transmitting layer.

9. The method for manufacturing a light emitting device according to claim 6, wherein: In the step of arranging the second structure, the second structure is arranged on the first surface via an adhesive layer. The adhesive layer is disposed on the upper surface of the substrate, the side surface of the first resin portion, the upper surface of the first resin portion, and the first surface of the semiconductor structure in a continuous and curved manner by spray coating.

10. The method for manufacturing a light emitting device according to any one of claims 1 to 3, wherein: The Shore hardness of the first resin portion after curing is HSD70 or more. The difference between the linear expansion coefficient of the first resin portion after curing and the linear expansion coefficient of the semiconductor structure is 30 ppm or less.

11. The method for manufacturing a light emitting device according to any one of claims 1 to 3, wherein: Also available: a step of disposing a second structure on the first structure obtained after removing the element substrate, The second structure has a plurality of wavelength conversion components and a second resin portion disposed between the plurality of wavelength conversion components. The second resin portion has a second inner portion arranged on the first inner portion of the first resin portion located between the multiple light-emitting portions, and a second outer peripheral portion arranged on the first outer peripheral portion of the first resin portion located outside the multiple light-emitting portions, and the second outer peripheral portion covers the entire upper surface of the first outer peripheral portion.

12. The method for manufacturing a light emitting device according to claim 11, wherein: The step of configuring the second structure includes: A process for preparing a wavelength conversion sheet; forming a groove on the wavelength conversion sheet; a step of disposing the second resin portion in the groove portion, The process of forming the groove portion includes: A step of forming a plurality of first grooves from a first sheet surface side of the wavelength conversion sheet facing the first structure; A step of forming a second groove portion from the first sheet surface side, the second groove portion extending from an outer peripheral first groove portion located at the outer periphery of the plurality of first groove portions toward the outside of the outer peripheral first groove portion and being shallower than the first groove portion.

13. The method for manufacturing a light emitting device according to claim 12, wherein: The step of configuring the second structure further comprises: A step of subjecting the wavelength conversion sheet to plasma treatment after the groove portion is formed and before the second resin portion is disposed.

14. A light emitting device comprising: A first structure having a substrate, a plurality of light emitting portions arranged on an upper surface of the substrate, and a first resin portion that holds the plurality of light emitting portions and exposes upper surfaces of the light emitting portions; a second structure having a plurality of wavelength conversion components arranged on each of the light emitting portions, and a second resin portion arranged between the plurality of wavelength conversion components, The first resin portion includes a light reflecting portion having high light reflectivity and a light absorbing portion disposed on the light reflecting portion and having higher light absorbency than the light reflecting portion. The second resin portion is disposed on the light absorbing portion.

15. The light emitting device according to claim 14, wherein: Each of the light emitting sections includes a semiconductor structure and a pair of electrode sections disposed on a lower surface of the semiconductor structure.

16. The light emitting device according to claim 14, wherein: On an upper surface of the first structure body, the upper surface of the light emitting portion and an upper surface of the first resin portion are located on the same plane.

17. The light emitting device according to claim 14, wherein: A third resin portion is further provided that covers at least the side surfaces of the first resin portion and a portion of the upper surface of the substrate.

18. The light emitting device according to any one of claims 14 to 17, wherein: further comprising a light-transmitting adhesive layer which continuously covers the upper surface of each of the light-emitting portions and the upper surface of the light-absorbing portion, The adhesive layer has a thickness of 1 μm or more and 15 μm or less.

19. The light emitting device according to claim 18, wherein: The adhesive layer further covers the upper surface of the first resin portion located outside the plurality of light-emitting portions in a plan view. The light absorbing portion is further arranged below the adhesive layer covering the upper surface of the first resin portion located outside the plurality of light emitting portions.

20. The light emitting device according to claim 18, wherein: The adhesive layer is disposed continuously and curvedly on a portion of the upper surface of the substrate, a side surface of the first structure, and an upper surface of the first structure.

21. The light emitting device according to any one of claims 14 to 17, wherein: The first resin portion contains a metal oxide.

22. The light emitting device according to any one of claims 14 to 17, wherein: A distance between two adjacent light emitting portions among the plurality of light emitting portions is greater than or equal to 1 μm and less than or equal to 15 μm.

23. The light emitting device according to any one of claims 14 to 17, wherein: In a plan view, an outer edge of the wavelength conversion member is located inside an outer edge of the light emitting portion.

24. The light emitting device according to any one of claims 14 to 17, wherein: A bonding member is further provided, which bonds a pair of electrode portions of the light emitting portion and a pair of wiring portions of the substrate. In a plan view, an area where the bonding member is in contact with the electrode portion accounts for 70% or more of an area of ​​the electrode portion.

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