Light-emitting chip packaging structure and manufacturing method thereof

Abstract

The invention discloses a light-emitting chip packaging structure and a manufacturing method thereof, and the light-emitting chip packaging structure comprises a light-emitting chip unit which is provided with a light-emitting surface; the light-blocking substrate is located on the light-emitting surface of the light-emitting chip unit, and a first through hole is formed in the light-blocking substrate and corresponds to the light-emitting chip unit; the color conversion layer is arranged in the first through hole of the light blocking substrate; and the reflecting material is at least filled between the inner wall of the first through hole of the light blocking substrate and the color conversion layer, and the reflecting material is a non-light-absorbing material with reflecting nanoparticles. According to the light-emitting chip packaging structure and the manufacturing method thereof, the light extraction rate can be greatly increased, and the brightness and the lighting effect are greatly improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of chip packaging, and in particular relates to a light-emitting chip packaging structure and a manufacturing method thereof. Background Art

[0002] ‌RGB chip is an integrated circuit widely used in display and lighting fields. RGB stands for red, green and blue, which are the three most common colors in the spectrum visible to the human eye. The basic principle of RGB chip is to produce different colors of light by controlling the brightness and mixing ratio of red, green and blue lights.‌

[0003] Conventional sapphire substrate RGB chips need to be coated with black light-blocking material around each chip unit before use to improve the contrast between pixels and eliminate the phenomenon of light crosstalk between pixels. Silicon-based substrate RGB chips can produce Si walls through etching to achieve the effect of light blocking.

[0004] However, the Si wall of the silicon-based RGB chip has the shortcoming of side wall light absorption and greatly reduced light output.

[0005] The information disclosed in this background technology section is only intended to enhance the understanding of the overall background of the invention and should not be regarded as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to a person skilled in the art. Summary of the invention

[0006] The object of the present invention is to provide a light-emitting chip packaging structure and a manufacturing method thereof, which can greatly increase the light extraction rate, brightness and light efficiency.

[0007] In order to achieve the above object, a technical solution provided by a specific embodiment of the present invention is as follows: A light-emitting chip packaging structure, comprising: The light emitting chip unit has a light emitting surface; A light-blocking substrate is located on the light-emitting surface of the light-emitting chip unit, and a first through hole is formed on the light-blocking substrate at a position corresponding to the light-emitting chip unit; a color conversion layer, disposed in the first through hole of the light-blocking substrate; and The reflective material is filled at least between the inner wall of the first through hole of the light-blocking substrate and the color conversion layer, and the reflective material is a non-light-absorbing material having reflective nanoparticles.

[0008] In one or more embodiments of the present invention, the number of the light emitting chip units is multiple, and the multiple light emitting chip units are arranged at intervals from each other; The light-blocking substrate is provided with a plurality of first through holes spaced apart from each other, and each of the first through holes corresponds to one of the light-emitting chip units.

[0009] In one or more embodiments of the present invention, a color conversion layer is disposed in each of the first through holes, and the plurality of color conversion layers output light of different colors.

[0010] In one or more embodiments of the present invention, a plurality of communication channels are provided on the light-blocking substrate, and a plurality of the first through holes are connected to each other through the communication channels.

[0011] In one or more embodiments of the present invention, the communication channel is recessed from a surface of the light-blocking substrate away from the light-emitting chip unit along a thickness direction of the light-blocking substrate.

[0012] In one or more embodiments of the present invention, a depth of the communication channel is less than or equal to a depth of the first through hole.

[0013] In one or more embodiments of the present invention, the reflective material completely covers the inner wall of the first through hole of the light-blocking substrate.

[0014] In one or more embodiments of the present invention, the reflective material includes epoxy resin having titanium dioxide and zirconium dioxide nanoparticles.

[0015] In one or more embodiments of the present invention, a metal reflective layer is further formed between the inner wall of the first through hole of the light-blocking substrate and the reflective material.

[0016] A method for manufacturing a light-emitting chip packaging structure, comprising: Providing a light-blocking substrate, the light-blocking substrate having a first surface and a second surface disposed opposite to each other; Fabricate a light-emitting chip unit on the first surface of the light-blocking substrate; forming an annular groove structure penetrating the light-blocking substrate and corresponding to the light-emitting chip unit on the second surface of the light-blocking substrate; Filling the annular groove structure with a reflective material; The light-blocking substrate in the annular groove structure is removed, and a light conversion material is filled to form a color conversion layer.

[0017] In one or more embodiments of the present invention, a plurality of light-emitting chip units are fabricated on the first surface of the light-blocking substrate; A plurality of annular groove structures are formed on the second surface of the light-blocking substrate, wherein each of the annular groove structures corresponds to one of the light-emitting chip units; A plurality of communication channels are formed on the second surface of the light-blocking substrate, and the plurality of annular groove structures are connected to each other through the communication channels; The reflective material is filled into at least one of the annular groove structures and / or the connecting channel, so that the reflective material flows along the connecting channel and fills all the annular groove structures.

[0018] A method for manufacturing a light-emitting chip packaging structure, comprising: Providing a light-blocking substrate, the light-blocking substrate having a first surface and a second surface disposed opposite to each other; Fabricate a light-emitting chip unit on the first surface of the light-blocking substrate; forming a second through hole exposing the light emitting chip unit on the second surface of the light blocking substrate; Filling the second through hole with a light conversion material to form a color conversion layer; forming an annular groove structure penetrating the light-blocking substrate along the edge of the color conversion layer on the second surface of the light-blocking substrate; The annular groove structure is filled with a reflective material.

[0019] In one or more embodiments of the present invention, a plurality of light-emitting chip units are fabricated on the first surface of the light-blocking substrate; A plurality of second through holes are formed on the second surface of the light-blocking substrate, wherein each of the second through holes corresponds to one of the light-emitting chip units; Filling a plurality of the second through holes with a light conversion material to form a color conversion layer; Forming a plurality of annular groove structures penetrating the light-blocking substrate along a plurality of edges of the color conversion layer on the second surface of the light-blocking substrate; A plurality of communication channels are formed on the second surface of the light-blocking substrate, and the plurality of annular groove structures are connected to each other through the communication channels; The reflective material is filled into at least one of the annular groove structures and / or the connecting channel, so that the reflective material flows along the connecting channel and fills all the annular groove structures.

[0020] Compared with the prior art, the light-emitting chip packaging structure and the manufacturing method thereof of the present invention, by arranging a non-light-absorbing material containing reflective nanoparticles in the through hole of the light-blocking substrate as a reflective material, offsets the absorption of light by the light-blocking substrate by the strong diffuse reflection effect of the reflective nanoparticles in the reflective material, thereby greatly reducing the absorption of light by the light-blocking substrate (material that limits the light-emitting direction) between the light-emitting chip units, greatly increasing the light extraction rate, and greatly improving the brightness and light efficiency.

[0021] The light-emitting chip packaging structure and the manufacturing method thereof of the present invention can greatly simplify the manufacturing process difficulty, improve the manufacturing efficiency, and improve the product yield and reliability by providing a connecting channel connecting the areas where multiple light-emitting chip units are located on the light-blocking substrate.

[0022] The light-emitting chip packaging structure and the manufacturing method thereof of the present invention use a non-light-absorbing material containing reflective nanoparticles as a reflective material, thereby solving the problem that most of the light in the light-blocking substrate is annihilated in the color conversion layer due to the mirror reflection of the inner wall of the through hole, thereby reducing the light extraction rate. At the same time, because the reflective material has a diffuse reflection effect, the requirements for the morphology flatness of the inner wall of the through hole on the light-blocking substrate can be greatly reduced, and the difficulty of etching the light-blocking substrate can be reduced.

[0023] The light-emitting chip packaging structure and the manufacturing method thereof of the present invention require cheap equipment, have a short manufacturing process, simple procedures, and are extremely cost-effective. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0025] Figure 1 is a top view of the light emitting chip packaging structure in Embodiment 1 of the present invention; Figure 2 is a cross-sectional view of the light-emitting chip packaging structure in Embodiment 1 of the present invention; Figure 3a-3f A method for manufacturing the light-emitting chip packaging structure in Embodiment 1 of the present invention; Figure 4a-4g Another method for manufacturing the light emitting chip packaging structure in Embodiment 1 of the present invention; Figure 5 is a top view of the light emitting chip packaging structure in Embodiment 2 of the present invention; Figure 6a It is an AA cross-sectional view of the light-emitting chip packaging structure in Embodiment 2 of the present invention; Figure 6b It is an AA cross-sectional view of another light-emitting chip packaging structure in Embodiment 2 of the present invention; Figure 7 It is a BB cross-sectional view of the light-emitting chip packaging structure in Embodiment 2 of the present invention; Figure 8a-8g A method for manufacturing the light emitting chip packaging structure in Embodiment 2 of the present invention; Figure 9a-9h Another method for manufacturing the light emitting chip packaging structure in Embodiment 2 of the present invention; Fig.10 It is a top view of the light-emitting chip packaging structure in Embodiment 3 of the present invention. DETAILED DESCRIPTION

[0026] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0027] As mentioned in the background technology, in existing RGB chips, each chip unit is coated with black light-blocking material to improve the contrast between pixels and eliminate the phenomenon of light crosstalk. However, while preventing light crosstalk, the black light-blocking material can also absorb light, thereby greatly reducing the light output efficiency of the RGB chip.

[0028] Based on this, the present invention proposes a light-emitting chip packaging structure and a manufacturing method thereof. Firstly, a first through hole corresponding to a light-emitting chip unit is directly opened on a light-blocking substrate, and the light-blocking substrate itself is used as a light-blocking structure between adjacent light-emitting chip units to achieve a light-blocking effect. Secondly, a non-light-absorbing material having reflective nanoparticles is arranged on the inner wall of the first through hole as a reflective material, and the strong diffuse reflection effect of the reflective nanoparticles in the reflective material is utilized to offset the absorption of light by the light-blocking substrate, thereby greatly increasing the light output rate, and greatly improving the brightness and light effect. At the same time, the requirements for the morphology flatness of the inner wall of the first through hole on the light-blocking substrate can be greatly reduced, and the difficulty of etching the light-blocking substrate can be reduced. Then, a connecting channel connecting the first through holes where multiple light-emitting chip units are located is arranged on the light-blocking substrate, so that the difficulty of the process can be greatly simplified when the reflective material is filled, the manufacturing efficiency can be improved, and the product yield and reliability can be improved.

[0029] The light emitting chip packaging structure and the manufacturing method thereof of the present invention are described in detail below in combination with a plurality of embodiments and corresponding drawings.

[0030] Example 1

[0031] refer to Figure 1 to Figure 2 As shown, in Embodiment 1 of the present invention, a light-emitting chip packaging structure is disclosed, including a light-emitting chip unit 10 , a light-blocking substrate 20 , a reflective material 30 and a color conversion layer 40 .

[0032] The light emitting chip unit 10 is preferably a blue light LED chip. The light emitting chip unit 10 has a light emitting surface.

[0033] The light-blocking substrate 20 is preferably a silicon substrate. The light-blocking substrate 20 is located on the light-emitting surface of the light-emitting chip unit 10. A first through hole 21 is provided on the light-blocking substrate 20 at a position corresponding to the light-emitting chip unit 10.

[0034] It is understandable that when manufacturing the light emitting chip unit 10, the light blocking substrate 20 can be directly used as a substrate, and the light emitting chip unit 10 can be manufactured on the light blocking substrate 20. The light blocking substrate 20 is then turned over, and the first through hole 21 is directly etched on the surface of the light blocking substrate 20 on one side away from the light emitting chip unit 10 to expose the light emitting chip unit 10 on the other side.

[0035] The color conversion layer 40 is disposed in the first through hole 21 of the light blocking substrate 20. The color conversion layer 40 can change the wavelength of the incident light (from the light emitting chip unit 10). The color conversion layer 40 can include a red conversion material, a green conversion material, or a blue conversion material. The red conversion material can convert the light emitted by the blue LED chip into red light with a wavelength between 600nm and 660nm. The green conversion material can convert the light emitted by the blue LED chip into green light with a wavelength between 500nm and 580nm, and the blue conversion material can convert the light emitted by the blue LED chip into blue light with a wavelength between 400nm and 470nm.

[0036] The reflective material 30 is at least filled between the inner wall of the first through hole 21 of the light-blocking substrate 20 and the color conversion layer 40. Preferably, the reflective material 30 completely covers the inner wall of the first through hole 21 of the light-blocking substrate 20. The reflective material 30 is a non-light-absorbing material having reflective nanoparticles. Preferably, the reflective material 30 includes an epoxy resin having nanoparticles such as titanium dioxide and zirconium dioxide.

[0037] Since the reflective nanoparticles in the reflective material 30 have diffuse reflection effect, the topography flatness requirement of the inner wall of the first through hole 21 on the light-blocking substrate 20 can be greatly reduced, and the difficulty of etching the light-blocking substrate 20 can be reduced.

[0038] In this embodiment 1, in order to further improve the light extraction efficiency and reduce the absorption of light by the light blocking substrate 20, a metal reflective layer is further provided between the inner wall of the first through hole 21 and the reflective material 30. The material of the metal reflective layer may include Al or Ag.

[0039] refer to Figure 3a to Figure 3f As shown, in Embodiment 1 of the present invention, a method for manufacturing the above-mentioned light-emitting chip packaging structure is also disclosed, which specifically comprises the following steps: A light-blocking substrate 20 is provided. The light-blocking substrate 20 is preferably a silicon-based substrate. The light-blocking substrate 20 has a first surface 20a and a second surface 20b that are opposite to each other.

[0040] The flip-chip light-emitting chip unit 10 is manufactured on the first surface 20 a of the light-blocking substrate 20 by using an existing manufacturing process.

[0041] Exemplarily, the epitaxial layer 100 required for the light-emitting chip unit 10 is grown on the first surface 20 a of the light-blocking substrate 20 , and then the epitaxial layer 100 is etched and coated with a film and an electrode to form the light-emitting chip unit 10 .

[0042] The light emitting chip unit 10 is preferably a blue light LED chip. The light emitting surface of the light emitting chip unit 10 is the surface where the light blocking substrate 20 is located.

[0043] An annular groove structure 22 is etched on the second surface 20b of the light-blocking substrate 20 to penetrate the light-blocking substrate 20 and correspond to the light-emitting chip unit 10. The outer diameter of the annular groove structure 22 must be greater than or equal to the size of the light-emitting chip unit 10. The groove width of the annular groove structure 22 can be adjusted as needed.

[0044] The annular groove structure 22 is filled with a reflective material 30. The reflective material 30 completely fills the annular groove structure 22. The reflective material 30 is a non-light-absorbing material having reflective nanoparticles. Preferably, the reflective material 30 includes an epoxy resin having nanoparticles such as titanium dioxide and zirconium dioxide.

[0045] The light-blocking substrate 20 within the enclosed range of the annular groove structure 22 is removed, and a light conversion material is filled in the light-blocking substrate removal area to form a color conversion layer 40. Preferably, the color conversion layer 40 can fill the removal area. The color conversion layer 40 can change the wavelength of the incident light (from the light-emitting chip unit 10). The color conversion layer 40 may include a red conversion material, a green conversion material, or a blue conversion material. The red conversion material can convert the light emitted by the blue light LED chip into red light with a wavelength between 600nm and 660nm. The green conversion material can convert the light emitted by the blue light LED chip into green light with a wavelength between 500nm and 580nm, and the blue conversion material can convert the light emitted by the blue light LED chip into blue light with a wavelength between 400nm and 470nm.

[0046] refer to Figure 4a to Figure 4g As shown, another method for manufacturing the above-mentioned light-emitting chip packaging structure is also disclosed in Embodiment 1 of the present invention, which specifically includes the following steps: A light-blocking substrate 20 is provided. The light-blocking substrate 20 is preferably a silicon-based substrate. The light-blocking substrate 20 has a first surface 20a and a second surface 20b that are opposite to each other.

[0047] The flip-chip light-emitting chip unit 10 is manufactured on the first surface 20 a of the light-blocking substrate 20 by using an existing manufacturing process.

[0048] Exemplarily, the epitaxial layer 100 required for the light-emitting chip unit 10 is grown on the first surface 20 a of the light-blocking substrate 20 , and then the epitaxial layer 100 is etched and coated with a film and an electrode to form the light-emitting chip unit 10 .

[0049] The light emitting chip unit 10 is preferably a blue light LED chip. The light emitting surface of the light emitting chip unit 10 is the surface where the light blocking substrate 20 is located.

[0050] A second through hole 23 exposing the light emitting chip unit 10 is formed on the second surface 20b of the light blocking substrate 20. The size of the second through hole 23 is equal to, larger than, or slightly smaller than that of the light emitting chip unit 10.

[0051] A light conversion material is filled in the second through hole 23 to form a color conversion layer 40. Preferably, the color conversion layer 40 can fill the second through hole 23. The color conversion layer 40 can change the wavelength of the incident light (from the light-emitting chip unit 10). The color conversion layer 40 may include a red conversion material, a green conversion material, or a blue conversion material. The red conversion material can convert the light emitted by the blue LED chip into red light with a wavelength between 600nm and 660nm. The green conversion material can convert the light emitted by the blue LED chip into green light with a wavelength between 500nm and 580nm, and the blue conversion material can convert the light emitted by the blue LED chip into blue light with a wavelength between 400nm and 470nm.

[0052] An annular groove structure 22 is formed by etching along the edge of the color conversion layer 40 on the second surface 20b of the light-blocking substrate 20 to penetrate the light-blocking substrate 20. The outer diameter of the annular groove structure 22 must be greater than or equal to the size of the light-emitting chip unit 10. The groove width of the annular groove structure 22 can be adjusted as needed. The sum of the range of the annular groove structure 22 and the second through hole 23 is the range of the first through hole 21. Preferably, in the thickness direction of the light-blocking substrate 20, the projection of the light-emitting chip unit 10 is located within the projection range of the annular groove structure 22.

[0053] The annular groove structure 22 is filled with a reflective material 30. The reflective material 30 completely fills the annular groove structure 22. The reflective material 30 is a non-light-absorbing material having reflective nanoparticles. Preferably, the reflective material 30 includes an epoxy resin having nanoparticles such as titanium dioxide and zirconium dioxide.

[0054] Example 2

[0055] refer to Figures 5 to 7 As shown, embodiment 2 of the present invention discloses a light-emitting chip packaging structure, including a plurality of light-emitting chip units 10 , a light-blocking substrate 20 , a reflective material 30 and a plurality of color conversion layers 40 .

[0056] The plurality of light emitting chip units 10 are preferably blue light LED chips. Each light emitting chip unit 10 has a light emitting surface. The plurality of light emitting chip units 10 can be arranged and combined in any form.

[0057] The light-blocking substrate 20 is preferably a silicon substrate. The light-blocking substrate 20 is located on the light-emitting surfaces of the plurality of light-emitting chip units 10. The plurality of light-emitting chip units 10 are spaced apart from each other, and light is isolated between adjacent light-emitting chip units 10 by a metal reflective layer. A first through hole 21 is provided on the light-blocking substrate 20 corresponding to each light-emitting chip unit 10. The plurality of first through holes 21 are also spaced apart from each other.

[0058] It is understandable that when manufacturing the light-emitting chip unit 10, the light-blocking substrate 20 can be directly used as a substrate, and multiple light-emitting chip units 10 can be manufactured on the light-blocking substrate 20. The light-blocking substrate 20 is then flipped over, and the first through hole 21 is directly etched on the surface of the light-blocking substrate 20 on one side away from the light-emitting chip unit 10 to expose the light-emitting chip unit 10 on the other side.

[0059] The light-blocking substrate 20 is also provided with a plurality of connecting channels 24, through which the plurality of first through holes 21 are connected to each other. The connecting channels 24 are formed by being recessed from the surface of the light-blocking substrate 20 away from the light-emitting chip unit 10 along the thickness direction of the light-blocking substrate 20. In one embodiment, the depth of the connecting channels 24 may be equal to the depth of the first through holes 21. Figure 6a In another embodiment, the depth of the communication channel 24 may be smaller than the depth of the first through hole 21. Figure 6b Preferably, the depth of the connecting channel 24 is equal to the depth of the first through hole 21 , so as to facilitate the subsequent flow of the reflective material 30 in the connecting channel 24 and the first through hole 21 .

[0060] The connecting channel 24 can be formed simultaneously with the first through hole 21 in the same etching step, or can be formed separately in two etching steps. The setting of the connecting channel 24 can simplify the manufacturing process of the light-emitting chip packaging structure, so that the subsequent filling of the reflective material 30 does not need to correspond to each first through hole 21; instead, the reflective material 30 only needs to be filled in at least one connecting channel 24, and the fluidity of the reflective material 30 is used to make the reflective material 30 flow along the connecting channel 24 to fill the inner walls of all the first through holes 21.

[0061] The areas between the adjacent first through holes 21 on the light-blocking substrate 20 where the communication channels 24 are not provided are all light-blocking substrates 20, so that the adjacent light-emitting chip units 10 are optically isolated by the light-blocking substrates 20. Figure 7 shown.

[0062] The color conversion layer 40 is arranged in the first through hole 21 of the light-blocking substrate 20. The color conversion layer 40 can change the wavelength of the incident light (from the light-emitting chip unit 10). Among them, a color conversion layer 40 is arranged in each first through hole 21, and multiple color conversion layers 40 can output light of different colors. The color conversion layer 40 may include a red conversion material or a green conversion material or a blue conversion material. The red conversion material can convert the light emitted by the blue light LED chip into red light with a wavelength between 600nm and 660nm. The green conversion material can convert the light emitted by the blue light LED chip into green light with a wavelength between 500nm and 580nm, and the blue conversion material can convert the light emitted by the blue light LED chip into blue light with a wavelength between 400nm and 470nm.

[0063] The reflective material 30 is at least filled between the inner wall of each first through hole 21 of the light-blocking substrate 20 and the color conversion layer 40, and may also be further filled in the connecting channel 24. Preferably, the reflective material 30 completely covers the inner wall of the first through hole 21 of the light-blocking substrate 20. The reflective material 30 is a non-light-absorbing material having reflective nanoparticles. Preferably, the reflective material 30 includes an epoxy resin having nanoparticles such as titanium dioxide and zirconium dioxide.

[0064] Since the reflective nanoparticles in the reflective material 30 have diffuse reflection effect, the topography flatness requirement of the inner wall of the first through hole 21 on the light-blocking substrate 20 can be greatly reduced, and the difficulty of etching the light-blocking substrate 20 can be reduced.

[0065] In this embodiment 2, in order to further improve the light extraction efficiency and reduce the absorption of light by the light blocking substrate 20, a metal reflective layer may be provided between the inner wall of the first through hole 21 and the reflective material 30. The material of the metal reflective layer may include Al or Ag.

[0066] refer to Figure 8a to Figure 8g As shown, in Embodiment 2 of the present invention, a method for manufacturing the above-mentioned light-emitting chip packaging structure is also disclosed, which specifically includes the following steps: A light-blocking substrate 20 is provided. The light-blocking substrate 20 is preferably a silicon-based substrate. The light-blocking substrate 20 has a first surface 20a and a second surface 20b that are opposite to each other.

[0067] A plurality of flip-chip light-emitting chip units 10 are manufactured by existing manufacturing processes on the first surface 20a of the light-blocking substrate 20. Adjacent light-emitting chip units 10 are light-isolated by arranging a metal reflective layer.

[0068] Exemplarily, the epitaxial layer 100 required for the plurality of light-emitting chip units 10 is grown on the first surface 20a of the light-blocking substrate 20, and then the epitaxial layer 100 is etched, plated, plated with a metal reflective layer, plated with electrodes, etc., to form a plurality of light-isolated light-emitting chip units 10.

[0069] The light emitting chip unit 10 is preferably a blue light LED chip. The light emitting surface of the light emitting chip unit 10 is the surface where the light blocking substrate 20 is located.

[0070] A plurality of annular groove structures 22 are etched on the second surface 20b of the light-blocking substrate 20 to penetrate the light-blocking substrate 20 and correspond one-to-one to the plurality of light-emitting chip units 10. The outer diameter of each annular groove structure 22 must be greater than or equal to the size of the corresponding light-emitting chip unit 10. The groove width of the annular groove structure 22 can be adjusted as needed.

[0071] A plurality of communication channels 24 are formed on the second surface 20b of the light blocking substrate 20 to communicate with the plurality of annular groove structures 22. The plurality of annular groove structures 22 are connected to each other through the communication channels 24.

[0072] The communication channel 24 is formed by being recessed from the second surface 20b of the light-blocking substrate 20 along the thickness direction of the light-blocking substrate 20. The depth of the communication channel 24 may be less than or equal to the depth of the annular groove structure 22. Preferably, the depth of the communication channel 24 is equal to the depth of the annular groove structure 22, so as to facilitate the subsequent circulation of the reflective material 30 in the communication channel 24 and the annular groove structure 22.

[0073] It is understandable that the connecting channel 24 can be formed simultaneously with the annular groove structure 22 in the same etching step, or can be formed separately in two etching steps. The setting of the connecting channel 24 can simplify the manufacturing process of the light-emitting chip packaging structure, so that the subsequent filling of the reflective material 30 does not need to correspond to each annular groove structure 22; instead, the reflective material 30 only needs to be filled in at least one connecting channel 24 or one annular groove structure 22, and the fluidity of the reflective material 30 is used to make the reflective material 30 flow along the connecting channel 24 to fill all the annular groove structures 22.

[0074] The reflective material 30 is filled in at least one annular groove structure 22 and / or the connecting channel 24, so that the reflective material 30 flows along the connecting channel 24 to and fills all the annular groove structures 22. The reflective material 30 completely fills the annular groove structure 22 and the connecting channel 24. The reflective material 30 is a non-light-absorbing material having reflective nanoparticles. Preferably, the reflective material 30 includes an epoxy resin having nanoparticles such as titanium dioxide and zirconium dioxide.

[0075] The light-blocking substrate 20 within the enclosed range of the annular groove structure 22 is removed, and a light conversion material is filled in the light-blocking substrate removal area to form a color conversion layer 40. Preferably, the color conversion layer 40 can fill the removal area. The color conversion layer 40 can change the wavelength of the incident light (from the light-emitting chip unit 10). The color conversion layer 40 may include a red conversion material, a green conversion material, or a blue conversion material. The red conversion material can convert the light emitted by the blue light LED chip into red light with a wavelength between 600nm and 660nm. The green conversion material can convert the light emitted by the blue light LED chip into green light with a wavelength between 500nm and 580nm, and the blue conversion material can convert the light emitted by the blue light LED chip into blue light with a wavelength between 400nm and 470nm.

[0076] refer to Figure 9a to Figure 9h As shown, another method for manufacturing the above-mentioned light-emitting chip packaging structure is also disclosed in Embodiment 2 of the present invention, which specifically includes the following steps: A light-blocking substrate 20 is provided. The light-blocking substrate 20 is preferably a silicon-based substrate. The light-blocking substrate 20 has a first surface 20a and a second surface 20b that are opposite to each other.

[0077] A plurality of flip-chip light-emitting chip units 10 are manufactured by existing manufacturing processes on the first surface 20a of the light-blocking substrate 20. Adjacent light-emitting chip units 10 are light-isolated by arranging a metal reflective layer.

[0078] Exemplarily, the epitaxial layer 100 required for the plurality of light-emitting chip units 10 is grown on the first surface 20a of the light-blocking substrate 20, and then the epitaxial layer 100 is etched, plated, plated with a metal reflective layer, plated with electrodes, etc., to form a plurality of light-isolated light-emitting chip units 10.

[0079] The light emitting chip unit 10 is preferably a blue light LED chip. The light emitting surface of the light emitting chip unit 10 is the surface where the light blocking substrate 20 is located.

[0080] A plurality of second through holes 23 exposing the light emitting chip units 10 are formed on the second surface 20b of the light blocking substrate 20. Each second through hole 23 corresponds to a light emitting chip unit 10. The size of each second through hole 23 is equal to, larger than, or slightly smaller than the size of the light emitting chip unit 10 corresponding thereto.

[0081] A light conversion material is filled in each second through hole 23 to form a color conversion layer 40. The color conversion layer 40 in the plurality of second through holes 23 outputs light of different colors. Preferably, the color conversion layer 40 can fill the second through holes 23. The color conversion layer 40 can change the wavelength of the incident light (from the light-emitting chip unit 10). The color conversion layer 40 may include a red conversion material, a green conversion material, or a blue conversion material. The red conversion material can convert the light emitted by the blue LED chip into red light having a wavelength between 600nm and 660nm. The green conversion material can convert the light emitted by the blue LED chip into green light having a wavelength between 500nm and 580nm, and the blue conversion material can convert the light emitted by the blue LED chip into blue light having a wavelength between 400nm and 470nm.

[0082] A plurality of annular groove structures 22 are formed by etching along the edges of the plurality of color conversion layers 40 on the second surface 20b of the light-blocking substrate 20, penetrating the light-blocking substrate 20. Each color conversion layer 40 corresponds to an annular groove structure 22. The inner diameter of each annular groove structure 22 must be greater than or equal to the size of the corresponding light-emitting chip unit 10. The groove width of the annular groove structure 22 can be adjusted as needed. Preferably, in the thickness direction of the light-blocking substrate 20, the projection of the light-emitting chip unit 10 is located within the projection range of the annular groove structure 22.

[0083] A plurality of communication channels 24 are formed on the second surface 20b of the light blocking substrate 20 to communicate with the plurality of annular groove structures 22. The plurality of annular groove structures 22 are connected to each other through the communication channels 24.

[0084] The communication channel 24 is formed by being recessed from the second surface 20b of the light-blocking substrate 20 along the thickness direction of the light-blocking substrate 20. The depth of the communication channel 24 may be less than or equal to the depth of the annular groove structure 22. Preferably, the depth of the communication channel 24 is equal to the depth of the annular groove structure 22, so as to facilitate the subsequent circulation of the reflective material 30 in the communication channel 24 and the annular groove structure 22.

[0085] It is understandable that the connecting channel 24 can be formed simultaneously with the annular groove structure 22 in the same etching step, or can be formed separately in two etching steps. The setting of the connecting channel 24 can simplify the manufacturing process of the light-emitting chip packaging structure, so that the subsequent filling of the reflective material 30 does not need to correspond to each annular groove structure 22; instead, the reflective material 30 only needs to be filled in at least one connecting channel 24 or one annular groove structure 22, and the fluidity of the reflective material 30 is used to make the reflective material 30 flow along the connecting channel 24 to fill all the annular groove structures 22.

[0086] The reflective material 30 is filled in at least one annular groove structure 22 and / or the connecting channel 24, so that the reflective material 30 flows along the connecting channel 24 to and fills all the annular groove structures 22. The reflective material 30 completely fills the annular groove structure 22 and the connecting channel 24. The reflective material 30 is a non-light-absorbing material having reflective nanoparticles. Preferably, the reflective material 30 includes an epoxy resin having nanoparticles such as titanium dioxide and zirconium dioxide.

[0087] Example 3

[0088] refer to Fig.10 As shown, in Embodiment 3 of the present invention, a light-emitting chip packaging structure is disclosed, which includes a plurality of light-emitting chip units 10 , a light-blocking substrate 20 , a reflective material 30 and a plurality of color conversion layers 40 .

[0089] The plurality of light emitting chip units 10 are preferably blue light LED chips. Each light emitting chip unit 10 has a light emitting surface. The plurality of light emitting chip units 10 can be arranged and combined in any form.

[0090] The light-blocking substrate 20 is preferably a silicon substrate. The light-blocking substrate 20 is located on the light-emitting surfaces of the plurality of light-emitting chip units 10. The plurality of light-emitting chip units 10 are spaced apart from each other, and light is isolated between adjacent light-emitting chip units 10 by a metal reflective layer. A first through hole 21 is provided on the light-blocking substrate 20 corresponding to each light-emitting chip unit 10. The plurality of first through holes 21 are also spaced apart from each other.

[0091] It is understandable that when manufacturing the light-emitting chip unit 10, the light-blocking substrate 20 can be directly used as a substrate, and multiple light-emitting chip units 10 can be manufactured on the light-blocking substrate 20. The light-blocking substrate 20 is then flipped over, and the first through hole 21 is directly etched on the surface of the light-blocking substrate 20 on one side away from the light-emitting chip unit 10 to expose the light-emitting chip unit 10 on the other side.

[0092] The color conversion layer 40 is arranged in the first through hole 21 of the light-blocking substrate 20. The color conversion layer 40 can change the wavelength of the incident light (from the light-emitting chip unit 10). Among them, a color conversion layer 40 is arranged in each first through hole 21, and multiple color conversion layers 40 can output light of different colors. The color conversion layer 40 may include a red conversion material or a green conversion material or a blue conversion material. The red conversion material can convert the light emitted by the blue light LED chip into red light with a wavelength between 600nm and 660nm. The green conversion material can convert the light emitted by the blue light LED chip into green light with a wavelength between 500nm and 580nm, and the blue conversion material can convert the light emitted by the blue light LED chip into blue light with a wavelength between 400nm and 470nm.

[0093] The reflective material 30 is filled between the inner wall of each first through hole 21 of the light-blocking substrate 20 and the color conversion layer 40. Preferably, the reflective material 30 completely covers the inner wall of the first through hole 21 of the light-blocking substrate 20. The reflective material 30 is a non-light-absorbing material having reflective nanoparticles. Preferably, the reflective material 30 includes an epoxy resin having nanoparticles such as titanium dioxide and zirconium dioxide.

[0094] Since the reflective nanoparticles in the reflective material 30 have diffuse reflection effect, the topography flatness requirement of the inner wall of the first through hole 21 on the light-blocking substrate 20 can be greatly reduced, and the difficulty of etching the light-blocking substrate 20 can be reduced.

[0095] In this embodiment 3, in order to further improve the light extraction efficiency and reduce the absorption of light by the light blocking substrate 20, a metal reflective layer may be provided between the inner wall of the first through hole 21 and the reflective material 30. The material of the metal reflective layer may include Al or Ag.

[0096] Compared with the prior art, the light-emitting chip packaging structure and the manufacturing method thereof of the present invention, by arranging a non-light-absorbing material containing reflective nanoparticles in the through hole of the light-blocking substrate as a reflective material, offsets the absorption of light by the light-blocking substrate by the strong diffuse reflection effect of the reflective nanoparticles in the reflective material, thereby greatly reducing the absorption of light by the light-blocking substrate (material that limits the light-emitting direction) between the light-emitting chip units, greatly increasing the light extraction rate, and greatly improving the brightness and light efficiency.

[0097] The light-emitting chip packaging structure and the manufacturing method thereof of the present invention can greatly simplify the manufacturing process difficulty, improve the manufacturing efficiency, and improve the product yield and reliability by providing a connecting channel connecting the areas where multiple light-emitting chip units are located on the light-blocking substrate.

[0098] The light-emitting chip packaging structure and the manufacturing method thereof of the present invention use a non-light-absorbing material containing reflective nanoparticles as a reflective material, thereby solving the problem that most of the light in the light-blocking substrate is annihilated in the color conversion layer due to the mirror reflection of the inner wall of the through hole, thereby reducing the light extraction rate. At the same time, because the reflective material has a diffuse reflection effect, the requirements for the morphology flatness of the inner wall of the through hole on the light-blocking substrate can be greatly reduced, and the difficulty of etching the light-blocking substrate can be reduced.

[0099] The light-emitting chip packaging structure and the manufacturing method thereof of the present invention require cheap equipment, have a short manufacturing process, simple procedures, and are extremely cost-effective.

[0100] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

[0101] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A light-emitting chip packaging structure, characterized in that: include: The light-emitting chip unit (10) has a light-emitting surface; A light-blocking substrate (20) is located on the light-emitting surface of the light-emitting chip unit (10), and a first through hole (21) is provided on the light-blocking substrate (20) at a position corresponding to the light-emitting chip unit (10); A color conversion layer (40) is arranged in the first through hole (21) of the light-blocking substrate (20); as well as The reflective material (30) is filled at least between the inner wall of the first through hole of the light-blocking substrate (20) and the color conversion layer (40), and the reflective material (30) is a non-light-absorbing material having reflective nanoparticles.

2. The light emitting chip packaging structure according to claim 1, characterized in that: The number of the light emitting chip units (10) is multiple, and the multiple light emitting chip units (10) are arranged at intervals from each other; The light-blocking substrate (20) is provided with a plurality of first through holes (21) spaced apart from each other, and each of the first through holes (21) corresponds to one of the light-emitting chip units (10).

3. The light emitting chip packaging structure according to claim 2, characterized in that: A color conversion layer (40) is arranged in each of the first through holes (21), and the plurality of color conversion layers (40) output light of different colors.

4. The light emitting chip packaging structure according to claim 2, characterized in that: A plurality of communication channels (24) are provided on the light-blocking substrate (20), and a plurality of the first through holes (21) are connected to each other via the communication channels (24).

5. The light emitting chip packaging structure according to claim 4, characterized in that: The communication channel (24) is formed by being recessed from a surface of the light-blocking substrate (20) away from the light-emitting chip unit (10) along a thickness direction of the light-blocking substrate (20); and / or, The depth of the communication channel (24) is less than or equal to the depth of the first through hole (21).

6. The light emitting chip packaging structure according to claim 1, characterized in that: The reflective material (30) completely covers the inner wall of the first through hole (21) of the light-blocking substrate (20); and / or, The reflective material (30) comprises epoxy resin containing titanium dioxide and zirconium dioxide nanoparticles; and / or, A metal reflective layer is also formed between the inner wall of the first through hole (21) of the light-blocking substrate (20) and the reflective material (30).

7. A method for manufacturing a light-emitting chip packaging structure, characterized in that: include: Providing a light-blocking substrate (20), wherein the light-blocking substrate (20) has a first surface and a second surface that are arranged opposite to each other; Manufacturing a light-emitting chip unit (10) on the first surface of the light-blocking substrate (20); An annular groove structure (22) is formed on the second surface of the light-blocking substrate (20) and penetrates the light-blocking substrate (20) and corresponds to the light-emitting chip unit (10); Filling a reflective material (30) in the annular groove structure (22); The light-blocking substrate in the annular groove structure (22) is removed, and a light conversion material is filled to form a color conversion layer (40).

8. The method for manufacturing a light emitting chip packaging structure according to claim 7, characterized in that: Manufacturing a plurality of light-emitting chip units (10) on the first surface of the light-blocking substrate (20); A plurality of annular groove structures (22) are formed on the second surface of the light-blocking substrate (20), wherein each of the annular groove structures (22) corresponds to one of the light-emitting chip units (10); A plurality of communication channels (24) are formed on the second surface of the light-blocking substrate (20), and the plurality of annular groove structures (22) are connected to each other via the communication channels (24); The reflective material (30) is filled into at least one of the annular groove structures (22) and / or the connecting channel (24), so that the reflective material (30) flows along the connecting channel (24) toward and fills all the annular groove structures (22).

9. A method for manufacturing a light-emitting chip packaging structure, characterized in that: include: Providing a light-blocking substrate (20), wherein the light-blocking substrate (20) has a first surface and a second surface that are arranged opposite to each other; Manufacturing a light-emitting chip unit (10) on the first surface of the light-blocking substrate (20); forming a second through hole (23) exposing the light-emitting chip unit (10) on the second surface of the light-blocking substrate (20); Filling the second through hole (23) with a light conversion material to form a color conversion layer (40); An annular groove structure (22) is formed on the second surface of the light-blocking substrate (20) along the edge of the color conversion layer (40) and penetrates the light-blocking substrate (20); A reflective material (30) is filled in the annular groove structure (22).

10. The method for manufacturing a light emitting chip packaging structure according to claim 9, characterized in that: Manufacturing a plurality of light-emitting chip units (10) on the first surface of the light-blocking substrate (20); A plurality of second through holes (23) are formed on the second surface of the light-blocking substrate (20), wherein each of the second through holes (23) corresponds to one of the light-emitting chip units (10); Filling a plurality of the second through holes (23) with a light conversion material to form a color conversion layer (40); A plurality of annular groove structures (22) penetrating the light-blocking substrate (20) are formed on the second surface of the light-blocking substrate (20) along the edges of the plurality of color conversion layers (40); A plurality of communication channels (24) are formed on the second surface of the light-blocking substrate (20), and the plurality of annular groove structures (22) are connected to each other via the communication channels (24); The reflective material (30) is filled into at least one of the annular groove structures (22) and / or the connecting channel (24), so that the reflective material (30) flows along the connecting channel (24) toward and fills all the annular groove structures (22).

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