Perovskite assembly processing method and perovskite assembly

Abstract

The invention provides a processing method of a perovskite component and the perovskite component. The perovskite component comprises a substrate, a front electrode layer, at least one group of heterojunction layers and a back electrode layer which are stacked in sequence, the group of heterojunction layers closest to the back electrode layer comprises a first charge transport layer, a perovskite layer and a second charge transport layer which are stacked in sequence, and the second charge transport layer is in contact with the back electrode layer; the second charge transport layer has a first orthographic projection on the perovskite layer, and the edge of the first orthographic projection is located in the area where the perovskite layer is located and does not coincide with the edge of the area where the perovskite layer is located; the back electrode layer has a second orthographic projection on the perovskite layer, and the edge of the second orthographic projection is located in the area where the perovskite layer is located and does not coincide with the edge of the area where the perovskite layer is located. According to the invention, the edge microstructure of the perovskite assembly is limited, and the risk of short circuit or electric leakage of the assembly can be effectively avoided.

Description

Technical Field

[0001] The present invention belongs to the technical field of photovoltaic devices and relates to a processing method of a perovskite component and a perovskite component. Background Art

[0002] Currently, the packaging of perovskite battery modules is inseparable from the cleaning of the edges on all sides. By cleaning the edges, a smooth and stable glass surface can be exposed, which facilitates subsequent packaging operations and provides a safe and stable packaging foundation for perovskite battery modules.

[0003] High-power laser edge cleaning is a commonly used method in the industry. While it offers the advantage of rapid edge cleaning, it can also leave a chipping morphology on the edge of the back electrode layer of the battery module, resulting in severe burrs. During subsequent lamination and packaging operations, these chipping burrs can contact the front electrode layer, causing short circuits or leakage in the battery module. Therefore, a solution is urgently needed to address this issue. Summary of the Invention

[0004] In response to the shortcomings of the prior art, the present invention aims to provide a method for processing a perovskite module and a perovskite module. The present invention defines the edge microstructure of the perovskite module, allowing the portion of the perovskite layer that extends beyond the back electrode layer and the second charge transport layer to isolate chipping burrs at the edge of the back electrode layer during subsequent lamination and packaging, preventing these chipping burrs from contacting the front electrode layer, thereby effectively mitigating the risk of module short circuits or leakage.

[0005] To achieve this object, the present invention adopts the following technical solutions:

[0006] In a first aspect, the present invention provides a perovskite component, comprising a substrate, a front electrode layer, at least one set of heterojunction layers, and a back electrode layer stacked in sequence.

[0007] A group of heterojunction layers closest to the back electrode layer includes a first charge transport layer, a perovskite layer, and a second charge transport layer stacked in sequence, and the second charge transport layer is in contact with the back electrode layer; the second charge transport layer has a first orthographic projection on the perovskite layer, and the edge of the first orthographic projection is located inside the area where the perovskite layer is located, and does not overlap with the edge of the area where the perovskite layer is located; the back electrode layer has a second orthographic projection on the perovskite layer, and the edge of the second orthographic projection is located inside the area where the perovskite layer is located, and does not overlap with the edge of the area where the perovskite layer is located.

[0008] The at least one group of heterojunction layers can be, for example, 1 group, 2 groups, 3 groups, 4 groups, 5 groups, 8 groups, 10 groups or 15 groups, etc., but is not limited to the listed values. Other unlisted values ​​within the numerical range are also applicable.

[0009] It should be noted that when a perovskite module contains only one set of heterojunction layers, this set of heterojunction layers is the set of heterojunction layers closest to the back electrode layer. When a perovskite module includes at least two sets of heterojunction layers, the perovskite module is also called a perovskite tandem cell.

[0010] The present invention defines the relationship between the projected edges of the back electrode layer and the second charge transport layer in the perovskite component and the area where the perovskite layer is located, so that the perovskite component has a special edge microstructure. The portion of the perovskite layer that extends beyond the back electrode layer and the second charge transport layer can isolate the edge chipping burrs of the back electrode layer during subsequent lamination and packaging, so that the edge chipping burrs of the back electrode layer will not contact the front electrode layer, thereby effectively avoiding the risk of component short circuit or leakage.

[0011] Preferably, the first orthographic projection and the second orthographic projection coincide with each other.

[0012] Preferably, the distance between the edge of the second orthographic projection and the edge of the region where the perovskite layer is located is ≥0.05 mm, for example, it can be 0.05 mm, 0.08 mm, 0.1 mm, 0.2 mm, 0.5 mm, 0.8 mm, 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, 3.5 mm, 4 mm, 4.5 mm, 5 mm, 5.5 mm, 6 mm, 6.5 mm, 7 mm, 7.5 mm, 8 mm, 8.5 mm, 9 mm, 9.5 mm, 10 mm or 11 mm, etc., but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable, preferably 0.05-10 mm.

[0013] In the present invention, if the distance between the second orthographic projection edge in the perovskite component and the edge of the area where the perovskite layer is located is too small, the chipped edge burrs at the edge of the back electrode layer will easily overlap the front electrode layer, causing a leakage risk; if the distance between the second orthographic projection edge in the perovskite component and the edge of the area where the perovskite layer is located is too large, a large amount of effective area will be lost, which is not conducive to improving product performance.

[0014] Preferably, the substrate has a film-carrying area and a marginal blank area surrounding the film-carrying area, and the film-carrying area is used to carry the front electrode layer, at least one set of heterojunction layers and the back electrode layer.

[0015] Preferably, the substrate comprises glass.

[0016] Preferably, the first charge transport layer and the second charge transport layer transport charges of opposite electrical properties.

[0017] In the present invention, the first and second charge transport layers transport charges of opposite electrical properties, with one layer transporting electrons and the other layer transporting holes. When the first charge transport layer is an electron transport layer, the second charge transport layer is a hole transport layer. When the first charge transport layer is a hole transport layer, the second charge transport layer is an electron transport layer. The same applies to other layers.

[0018] Preferably, when the perovskite component includes at least two groups of heterojunction layers, except for one group of heterojunction layers closest to the back electrode layer, each of the remaining groups of heterojunction layers includes a charge transfer layer A, a perovskite absorption layer and a charge transfer layer B stacked in sequence along the direction from the front electrode layer to the back electrode layer; the charge transfer layer A and the charge transfer layer B transfer charges with opposite electrical properties.

[0019] It should be noted that, in the remaining heterojunction layers except for the group of heterojunction layers closest to the back electrode layer, the material and thickness of the charge transport layer A in each group of heterojunction layers can be the same or different. The same applies to the perovskite absorption layer and the charge transport layer B.

[0020] Preferably, when the perovskite component includes at least two groups of heterojunction layers, a tunneling composite layer is provided between two adjacent groups of heterojunction layers.

[0021] Preferably, the thickness of the front electrode layer is 0.1-1000nm, for example, it can be 0.1nm, 0.2nm, 0.5nm, 1nm, 2nm, 5nm, 10nm, 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm or 1000nm, etc., but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0022] Preferably, the thickness of each group of heterojunction layers is independently 0.3-3000 nm, for example, it can be 0.3 nm, 0.5 nm, 1 nm, 2 nm, 5 nm, 10 nm, 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, 800 nm, 850 nm, 900 nm, 950 nm, 1000 nm, 1500 nm, 2000 nm, 2500 nm or 3000 nm, etc., but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0023] Preferably, the thickness of the back electrode layer is 0.1-1000nm, for example, it can be 0.1nm, 0.2nm, 0.5nm, 1nm, 2nm, 5nm, 10nm, 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm or 1000nm, etc., but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0024] Preferably, in a group of heterojunction layers closest to the back electrode layer, the thickness of the first charge transfer layer is 0.1-1000nm, for example, it can be 0.1nm, 0.2nm, 0.5nm, 1nm, 2nm, 5nm, 10nm, 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm or 1000nm, etc., but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0025] Preferably, in a group of heterojunction layers closest to the back electrode layer, the thickness of the perovskite layer is 0.1-1000nm, for example, it can be 0.1nm, 0.2nm, 0.5nm, 1nm, 2nm, 5nm, 10nm, 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm or 1000nm, etc., but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0026] Preferably, the thickness of the portion of the perovskite layer extending beyond the back electrode layer and the second charge transport layer is ≤ the thickness of the region of the perovskite layer covered by the second charge transport layer.

[0027] In the present invention, even if the thickness of the portion of the perovskite layer extending beyond the back electrode layer and the second charge transport layer is reduced, it can still play a role in isolating the chipped burrs at the edge of the back electrode layer.

[0028] Preferably, in a group of heterojunction layers closest to the back electrode layer, the thickness of the second charge transfer layer is 0.1-1000nm, for example, it can be 0.1nm, 0.2nm, 0.5nm, 1nm, 2nm, 5nm, 10nm, 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm or 1000nm, etc., but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0029] Preferably, the thickness range of the charge transport layer A, the perovskite absorption layer, the charge transport layer B and the tunneling composite layer is independently 0.1-1000 nm, for example, it can be 0.1 nm, 0.2 nm, 0.5 nm, 1 nm, 2 nm, 5 nm, 10 nm, 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, 800 nm, 850 nm, 900 nm, 950 nm or 1000 nm, etc., but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0030] The present invention does not specifically limit the type of material for the front electrode layer in the perovskite component, including but not limited to transparent conductive oxides (TCO), such as indium tin oxide (ITO), fluorine-doped tin oxide (FTO) or aluminum-doped zinc oxide (AZO).

[0031] The present invention does not specifically limit the type of material for the back electrode layer in the perovskite component, including but not limited to metal materials, carbon materials, conductive polymers, transparent conductive oxides, and composite materials composed of different conductive materials. The metal material can be, for example, gold, silver, or copper, the carbon material can be, for example, graphite, carbon nanotubes, or graphene, the conductive polymer can be, for example, polyaniline, and the transparent conductive oxide can be, for example, indium tin oxide (ITO) or fluorine-doped tin oxide (FTO).

[0032] The present invention does not specifically limit the type of perovskite material used in the perovskite module, including but not limited to organic-inorganic hybrid perovskite materials, all-inorganic perovskite materials, or perovskite quantum dots. Examples of organic-inorganic hybrid perovskite materials include methylamine lead iodide, methylamine tin iodide, formamidine lead iodide, or methylamine / formamidine mixed cation perovskite. Examples of all-inorganic perovskite materials include cesium lead halide.

[0033] The present invention does not specifically limit the type of material for the electron transport layer in the perovskite component, including but not limited to tin dioxide, titanium dioxide, zinc oxide, C 60 or fullerene derivatives, etc.

[0034] The present invention does not specifically limit the type of material for the hole transport layer in the perovskite component, including but not limited to nickel oxide, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT:PSS), Spiro-OMeTAD or poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), etc.

[0035] The present invention does not impose any specific restrictions on the type of material of the tunneling composite layer in the perovskite component, including but not limited to nickel oxide, molybdenum disulfide or graphene.

[0036] In a second aspect, the present invention provides a method for processing the perovskite component according to the first aspect, the processing method comprising:

[0037] (1) Providing a perovskite component to be processed, the perovskite component to be processed comprising a substrate, and a front electrode layer to be processed, at least one group of heterojunction layers to be processed, and a back electrode layer to be processed, which are sequentially stacked on the substrate; a group of heterojunction layers to be processed closest to the back electrode layer to be processed comprises a first charge transport layer to be processed, a perovskite layer to be processed, and a second charge transport layer to be processed, which are sequentially stacked, and the second charge transport layer to be processed is in contact with the back electrode layer to be processed; the perovskite component to be processed is divided into an effective area and a processing area from the center to the edge.

[0038] (2) The area formed by extending outward from the edge of the effective area in the processing area by a first length is set as the first edge cleaning area, and a laser is used to perform first edge cleaning in the first edge cleaning area along a direction perpendicular to the substrate to remove the second charge transfer layer to be processed and the back electrode layer to be processed in the first edge cleaning area; then, the area formed by extending outward from the second length from the edge of the effective area in the processing area is set as the second edge cleaning area, and a laser is used to perform second edge cleaning in the second edge cleaning area along a direction perpendicular to the substrate to remove all layers to be processed in the second edge cleaning area to obtain a perovskite component, wherein 0 < second length ≤ first length.

[0039] The present invention can obtain the perovskite component described in the first aspect by performing the first edge cleaning and the second edge cleaning operations on the perovskite component to be processed.

[0040] In the present invention, the second length corresponds to the distance between the edge of the second orthographic projection of the perovskite component and the edge of the region where the perovskite layer is located. After the second edge cleaning, the edge surface of the substrate is exposed, corresponding to the edge blank area of ​​the substrate.

[0041] Preferably, the power of the laser used in the first edge cleaning is less than the power of the laser used in the second edge cleaning.

[0042] In the present invention, a lower power laser is used for the first edge cleaning, which will form smaller explosive edge chipping burrs on the edge of the back electrode layer. The tiny burrs are more easily isolated by the portion of the perovskite layer that extends beyond the back electrode layer and the second charge transfer layer, which is beneficial to further reduce the risk of component short circuit or leakage.

[0043] Preferably, the wavelength of the laser used for the first edge cleaning is greater than 800 nm, for example, it can be 810 nm, 980 nm, 1064 nm or 1550 nm, etc., but it is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0044] Preferably, the power of the laser used for the first edge cleaning is 1-400W, for example, it can be 1W, 2W, 5W, 10W, 20W, 50W, 100W, 150W, 200W, 250W, 300W, 350W or 400W, but is not limited to the listed values. Other values ​​not listed within this numerical range are also applicable.

[0045] In the present invention, a lower-power laser is used for the first edge cleaning, which will form smaller explosive edge chipping burrs on the edge of the back electrode layer. The length of the formed burrs is often less than 0.1 mm. Such tiny burrs are more easily isolated by the portion of the perovskite layer that extends beyond the back electrode layer and the second charge transfer layer, which is beneficial to further reduce the risk of component short circuit or leakage.

[0046] Preferably, the frequency of the laser used for the first edge cleaning is 10-1000kHz, for example, it can be 10kHz, 20kHz, 50kHz, 100kHz, 200kHz, 300kHz, 400kHz, 500kHz, 600kHz, 700kHz, 800kHz, 900kHz or 1000kHz, etc., but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0047] Preferably, the wavelength of the laser used for the second edge cleaning is greater than 800 nm, for example, it can be 810 nm, 980 nm, 1064 nm or 1550 nm, etc., but it is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0048] Preferably, the power of the laser used for the second edge cleaning is 500-2000W, for example, it can be 500W, 600W, 700W, 800W, 1000W, 1200W, 1500W, 1800W or 2000W, but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0049] Preferably, the frequency of the laser used for the second edge cleaning is 1-500kHz, for example, it can be 1kHz, 2kHz, 5kHz, 10kHz, 20kHz, 50kHz, 100kHz, 200kHz, 300kHz, 400kHz or 500kHz, etc., but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0050] The numerical range described in the present invention includes not only the point values ​​listed above, but also any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0051] Compared with the prior art, the present invention has the following beneficial effects:

[0052] The present invention defines the relationship between the projected edges of the back electrode layer and the second charge transport layer in the perovskite component and the area where the perovskite layer is located, so that the perovskite component has a special edge microstructure. The portion of the perovskite layer that extends beyond the back electrode layer and the second charge transport layer can isolate the edge chipping burrs of the back electrode layer during subsequent lamination and packaging, so that the edge chipping burrs of the back electrode layer will not contact the front electrode layer, thereby effectively avoiding the risk of component short circuit or leakage. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] Figure 1 This is a schematic diagram of the edge structure of one side of the perovskite component provided in Example 1 of the present invention.

[0054] Figure 2 This is a schematic diagram of the edge structure of one side of the perovskite component provided in Example 4 of the present invention.

[0055] Figure 3 This is a schematic diagram of the edge structure of one side of the perovskite component provided in Comparative Example 1 of the present invention.

[0056] Among them, 1-substrate; 2-front electrode layer; 3-first charge transport layer; 4-perovskite layer; 5-second charge transport layer; 6-back electrode layer; 7-charge transport layer A; 8-perovskite absorption layer; 9-charge transport layer B; 10-tunneling composite layer. DETAILED DESCRIPTION

[0057] It should be understood that in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", etc. are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, features defined as "first", "second", etc. may explicitly or implicitly include one or more of such features.

[0058] The technical solution of the present invention is further illustrated below through specific implementation methods.

[0059] Example 1

[0060] This embodiment provides a method for processing a perovskite component, comprising the following steps:

[0061] (1) Providing a perovskite component to be processed, wherein the perovskite component to be processed comprises a substrate, a front electrode layer to be processed, a first charge transport layer to be processed, a perovskite layer to be processed, a second charge transport layer to be processed, and a back electrode layer to be processed, which are stacked in sequence from bottom to top.

[0062] The substrate is glass; the material of the front electrode layer to be processed is FTO with a thickness of 500nm; the first charge transport layer to be processed is used to transport holes, and the specific material is nickel oxide with a thickness of 20nm; the material of the perovskite layer to be processed is MAPbBrI2 with a thickness of 500nm; the second charge transport layer to be processed is used to transport electrons, and includes C 60 layer and tin dioxide layer, C 60 The thickness of the layer is 10nm, and the thickness of the tin dioxide layer is 20nm; the material of the back electrode layer to be processed is ITO, with a thickness of 150nm; the perovskite component to be processed is divided into an effective area and a processing area from the center to the edge.

[0063] (2) A first infrared laser with a wavelength of 1064 nm and a second infrared laser with a wavelength of 1064 nm are placed above the back electrode layer, the power of the first infrared laser is set to 100 W and the frequency is set to 100 kHz, and the area formed by starting from the edge of the effective area and extending outward by 3 mm in the processing area is set as the first edge cleaning area, so that the first infrared laser performs the first edge cleaning in the first edge cleaning area along a direction perpendicular to the substrate to remove the second charge transfer layer to be processed and the back electrode layer to be processed in the first edge cleaning area; then the power of the second infrared laser is set to 1000 W and the frequency is set to 50 kHz, and the area formed by starting from 0.5 mm from the edge of the effective area and extending outward by 10 mm in the processing area is set as the second edge cleaning area, so that the second infrared laser performs the second edge cleaning in the second edge cleaning area along a direction perpendicular to the substrate to remove all the layers to be processed in the second edge cleaning area, thereby forming an edge blank area on the substrate, and a perovskite component is obtained after the edge cleaning is completed.

[0064] The edge structure of one side of the perovskite component is as follows Figure 1 As shown, the perovskite component includes a substrate 1, which has a film-carrying area and an edge blank area surrounding the film-carrying area. A front electrode layer 2, a first charge transport layer 3, a perovskite layer 4, a second charge transport layer 5 and a back electrode layer 6 are stacked in sequence from bottom to top in the film-carrying area; the second charge transport layer 5 has a first orthographic projection on the perovskite layer 4, and the edge of the first orthographic projection is located inside the area where the perovskite layer 4 is located, and does not overlap with the edge of the area where the perovskite layer 4 is located; the back electrode layer 6 has a second orthographic projection on the perovskite layer 4, and the edge of the second orthographic projection is located inside the area where the perovskite layer 4 is located, and does not overlap with the edge of the area where the perovskite layer 4 is located; the first orthographic projection and the second orthographic projection overlap; the distance between the edge of the second orthographic projection and the edge of the area where the perovskite layer 4 is located is 0.5 mm.

[0065] Example 2

[0066] The difference between this embodiment and embodiment 1 is that in step (2), the first infrared laser and the second infrared laser are placed below the substrate.

[0067] The remaining parameters remain the same as those in Example 1.

[0068] Example 3

[0069] This embodiment provides a method for processing a perovskite component, comprising the following steps:

[0070] (1) Providing a perovskite component to be processed, wherein the perovskite component to be processed comprises a substrate, a front electrode layer to be processed, a first charge transport layer to be processed, a perovskite layer to be processed, a second charge transport layer to be processed, and a back electrode layer to be processed, which are stacked in sequence from bottom to top.

[0071] Among them, the substrate is glass; the material of the front electrode layer to be processed is FTO, with a thickness of 500nm; the first charge transport layer to be processed is used to transport holes, and the specific material is nickel oxide, with a thickness of 20nm; the material of the perovskite layer to be processed is FA 0.3 MA 0.7 PbBrI2, with a thickness of 500nm; the second charge transport layer to be processed is used to transport electrons, including C 60 layer and tin dioxide layer, C 60 The thickness of the layer is 10nm, and the thickness of the tin dioxide layer is 20nm; the material of the back electrode layer to be processed is ITO, with a thickness of 150nm; the perovskite component to be processed is divided into an effective area and a processing area from the center to the edge.

[0072] (2) A first infrared laser with a wavelength of 1064 nm and a second infrared laser with a wavelength of 1064 nm are placed below the substrate, the power of the first infrared laser is set to 200 W, the frequency is set to 100 kHz, and the area formed by starting from the edge of the effective area and extending outward by 2 mm in the processing area is set as the first edge cleaning area, so that the first infrared laser performs the first edge cleaning in the first edge cleaning area along a direction perpendicular to the substrate to remove the second charge transfer layer to be processed and the back electrode layer to be processed in the first edge cleaning area; then the power of the second infrared laser is set to 1300 W, the frequency is set to 100 kHz, and the area formed by starting from 1 mm from the edge of the effective area and extending outward by 11 mm in the processing area is set as the second edge cleaning area, so that the second infrared laser performs the second edge cleaning in the second edge cleaning area along a direction perpendicular to the substrate to remove all the layers to be processed in the second edge cleaning area, thereby forming an edge blank area on the substrate, and a perovskite component is obtained after the edge cleaning is completed.

[0073] The perovskite component includes a substrate, which has a film-carrying area and an edge blank area surrounding the film-carrying area. A front electrode layer, a first charge transport layer, a perovskite layer, a second charge transport layer and a back electrode layer are stacked in sequence from bottom to top in the film-carrying area; the second charge transport layer has a first orthographic projection on the perovskite layer, and the edge of the first orthographic projection is located inside the area where the perovskite layer is located, and does not overlap with the edge of the area where the perovskite layer is located; the back electrode layer has a second orthographic projection on the perovskite layer, and the edge of the second orthographic projection is located inside the area where the perovskite layer is located, and does not overlap with the edge of the area where the perovskite layer is located; the first orthographic projection and the second orthographic projection overlap; and the distance between the edge of the second orthographic projection and the edge of the area where the perovskite layer is located is 1 mm.

[0074] Example 4

[0075] This embodiment provides a method for processing a perovskite component, comprising the following steps:

[0076] (1) Providing a perovskite component to be processed, wherein the perovskite component to be processed includes a substrate, a front electrode layer to be processed, a charge transport layer A to be processed, a perovskite absorption layer to be processed, a charge transport layer B to be processed, a tunneling composite layer to be processed, a first charge transport layer to be processed, a perovskite layer to be processed, a second charge transport layer to be processed, and a back electrode layer to be processed, which are stacked in sequence from bottom to top.

[0077] The substrate is glass; the material of the front electrode layer to be processed is FTO with a thickness of 500nm; the charge transport layer A to be processed is used to transport holes, and the specific material is nickel oxide with a thickness of 20nm; the material of the perovskite absorption layer to be processed is Cs 0.2 FA 0.8 PbI 1.8 Br 1.2 , with a thickness of 300nm; the charge transport layer B to be processed is used to transport electrons, including C 60 layer and tin dioxide layer, C 60 The thickness of the layer is 10nm, the thickness of the tin dioxide layer is 40nm; the material of the tunneling composite layer to be processed is gold, with a thickness of 1nm; the first charge transport layer to be processed is used to transport holes, and the specific material is PEDOT:PSS, with a thickness of 25nm; the material of the perovskite layer to be processed is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3, with a thickness of 700nm; the second charge transport layer to be processed is used to transport electrons, including C 60 layer and tin dioxide layer, C 60 The thickness of the layer is 10nm, and the thickness of the tin dioxide layer is 40nm; the back electrode layer to be processed includes an ITO layer and a Cu layer stacked in sequence in a direction away from the substrate, the thickness of the ITO layer is 50nm, and the thickness of the Cu layer is 100nm; the perovskite component to be processed is divided into an effective area and a processing area from the center to the edge.

[0078] (2) A first infrared laser with a wavelength of 1064 nm and a second infrared laser with a wavelength of 1064 nm are placed above the back electrode layer, the power of the first infrared laser is set to 300 W and the frequency is set to 500 kHz, and the area formed by starting from the edge of the effective area and extending outward by 5 mm in the processing area is set as the first edge cleaning area, so that the first infrared laser performs the first edge cleaning in the first edge cleaning area along a direction perpendicular to the substrate to remove the second charge transfer layer to be processed and the back electrode layer to be processed in the first edge cleaning area; then the power of the second infrared laser is set to 2000 W and the frequency is set to 400 kHz, and the area formed by starting from 5 mm from the edge of the effective area and extending outward by 12 mm in the processing area is set as the second edge cleaning area, so that the second infrared laser performs the second edge cleaning in the second edge cleaning area along a direction perpendicular to the substrate to remove all the layers to be processed in the second edge cleaning area, thereby forming an edge blank area on the substrate, and a perovskite component is obtained after the edge cleaning is completed.

[0079] The edge structure of one side of the perovskite component is as follows Figure 2 As shown, the perovskite component includes a substrate 1, which has a film-carrying area and an edge blank area surrounding the film-carrying area. A front electrode layer 2, a charge transport layer A7, a perovskite absorption layer 8, a charge transport layer B9, a tunneling composite layer 10, a first charge transport layer 3, a perovskite layer 4, a second charge transport layer 5 and a back electrode layer 6 are stacked in sequence from bottom to top in the film-carrying area; the second charge transport layer 5 has a first orthographic projection on the perovskite layer 4, and the edge of the first orthographic projection is located inside the area where the perovskite layer 4 is located, and does not overlap with the edge of the area where the perovskite layer 4 is located; the back electrode layer 6 has a second orthographic projection on the perovskite layer 4, and the edge of the second orthographic projection is located inside the area where the perovskite layer 4 is located, and does not overlap with the edge of the area where the perovskite layer 4 is located; the first orthographic projection and the second orthographic projection overlap; the distance between the edge of the second orthographic projection and the edge of the area where the perovskite layer 4 is located is 5 mm.

[0080] Example 5

[0081] The difference between this embodiment and embodiment 1 is that the power of the first infrared laser is adjusted to 1500 W and the frequency is adjusted to 250 kHz.

[0082] The remaining parameters remain the same as those in Example 1.

[0083] Example 6

[0084] The difference between this embodiment and embodiment 1 is that the distance between the edge of the second orthographic projection in the perovskite component and the edge of the region where the perovskite layer is located is 0.02 mm.

[0085] The remaining parameters remain the same as those in Example 1.

[0086] Comparative Example 1

[0087] The difference between this comparative example and Example 1 is that the first edge cleaning operation is omitted.

[0088] The remaining parameters remain the same as those in Example 1.

[0089] The edge structure of one side of the perovskite component obtained in this comparative example is as follows Figure 3 As shown, the perovskite component includes a substrate 1, the substrate 1 has a film-carrying area and an edge blank area surrounding the film-carrying area, and a front electrode layer 2, a first charge transport layer 3, a perovskite layer 4, a second charge transport layer 5 and a back electrode layer 6 are stacked in sequence from bottom to top in the film-carrying area; the front electrode layer 2, the first charge transport layer 3, the perovskite layer 4, the second charge transport layer 5 and the back electrode layer 6 have their orthographic projections on the substrate 1 overlap.

[0090] Comparative Example 2

[0091] The difference between this comparative example and Example 2 is that the first edge cleaning operation is omitted.

[0092] The remaining parameters remain the same as those in Example 2.

[0093] The perovskite component obtained in this comparative example includes a substrate, which has a film-carrying area and an edge blank area surrounding the film-carrying area, and a front electrode layer, a first charge transport layer, a perovskite layer, a second charge transport layer and a back electrode layer are stacked in sequence from bottom to top in the film-carrying area; the orthographic projections of the front electrode layer, the first charge transport layer, the perovskite layer, the second charge transport layer and the back electrode layer on the substrate all overlap.

[0094] test:

[0095] (1) Appearance inspection:

[0096] The length of chipping burrs at the edge of the back electrode layer in the perovskite components provided in the above embodiments and comparative examples is detected by an industrial camera. If the length of the chipping burrs is greater than 0.3 mm, the component appearance is considered to be poor; if the length of the chipping burrs is ≤ 0.3 mm, the component appearance is considered to be qualified.

[0097] (2) Yield test:

[0098] Based on the methods of the above embodiments and comparative examples, perovskite components were prepared in batches.

[0099] The specific steps for laminating and encapsulating perovskite components include: ① Applying butyl tape to the blank area at the edge of the substrate; ② Applying drainage strips to the component electrodes, leading the electrodes out of the glass; ③ Covering the surface of each layer on the substrate with POE film; ④ Covering with backplane glass; ⑤ Entering the laminator for vacuum hot lamination, and outputting after cooling.

[0100] The IV test method for component performance testing in the IEC61215 standard was used to test the power of the perovskite component before and after step ⑤, that is, the power of the perovskite component before lamination and the power of the perovskite component after lamination were tested respectively.

[0101] The yield of pre-lamination perovskite modules = the number of pre-lamination perovskite modules with a power ≥ 100 W / the total number of tested pre-lamination perovskite modules.

[0102] The yield of laminated perovskite modules = the number of laminated perovskite modules with a power ≥ 100 W / the total number of laminated perovskite modules tested.

[0103] The test results are shown in Table 1.

[0104] Table 1

[0105]

[0106] analyze:

[0107] As can be seen from Examples 1-4, the present invention can obtain a perovskite component with an edge microstructure through the first edge cleaning and the second edge cleaning operations, and the first edge cleaning uses a lower laser power for cleaning, which can make the edge chipping burrs generated at the edge of the back electrode layer smaller. Therefore, with the help of the first edge cleaning and the second edge cleaning, the partial area of ​​the perovskite layer that exceeds the back electrode layer and the second charge transfer layer can serve as a protection zone. During laminate packaging, the protection zone can isolate the tiny edge chipping burrs generated by laser edge cleaning at the edge of the back electrode layer, so that the edge chipping burrs at the edge of the back electrode layer will not contact the front electrode layer, thereby effectively avoiding the risk of component short circuit or leakage. In addition, the edge microstructure and processing method of the present invention are applicable to single-junction perovskite components and are also applicable to stacked perovskite components.

[0108] It can be seen from Examples 1 and 5 that if a high-power, low-frequency laser is used for the first edge cleaning, the edge chipping burrs on the back electrode layer will be larger, often greater than 0.3 mm, resulting in a large number of back electrode layer burrs with a high probability of overlapping the edge of the front electrode layer exposed by the second edge cleaning, causing leakage loss.

[0109] It can be seen from Examples 1 and 6 that if the distance between the second orthographic projection edge and the edge of the area where the perovskite layer is located in the perovskite component is too small, the clearance area is too narrow, resulting in the inability to effectively isolate the burrs on the back electrode layer from the edge of the front electrode layer exposed by the second clear edge. Some relatively large burrs will cross the isolation of the clearance area, causing leakage loss.

[0110] It can be seen from Examples 1-2 and Comparative Examples 1-2 that if the first edge cleaning operation is omitted and the second edge cleaning is performed directly, the edge of the back electrode layer will have larger chipped burrs, which will result in a high probability that more burrs on the back electrode layer will overlap the edge of the front electrode layer, causing leakage loss.

[0111] The above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention fall within the protection scope and disclosure scope of the present invention.

Claims

1. A perovskite component, characterized in that: The perovskite component comprises a substrate, a front electrode layer, at least one set of heterojunction layers and a back electrode layer which are stacked in sequence; A group of heterojunction layers closest to the back electrode layer includes a first charge transport layer, a perovskite layer, and a second charge transport layer stacked in sequence, and the second charge transport layer is in contact with the back electrode layer; The second charge transport layer has a first orthographic projection on the perovskite layer, and an edge of the first orthographic projection is located inside the region where the perovskite layer is located, and does not overlap with an edge of the region where the perovskite layer is located; The back electrode layer has a second orthographic projection on the perovskite layer, and an edge of the second orthographic projection is located inside the region where the perovskite layer is located and does not overlap with an edge of the region where the perovskite layer is located.

2. The perovskite component according to claim 1, characterized in that The first orthographic projection and the second orthographic projection coincide with each other; Preferably, the distance between the edge of the second orthographic projection and the edge of the region where the perovskite layer is located is ≥0.05 mm, preferably 0.05-10 mm.

3. The perovskite component according to claim 1 or 2, characterized in that: The substrate comprises a film-carrying region and an edge blank region surrounding the film-carrying region, wherein the film-carrying region is used for carrying the front electrode layer, at least one group of heterojunction layers and the back electrode layer.

4. The perovskite component according to any one of claims 1 to 3, characterized in that: The first charge transport layer and the second charge transport layer transport charges of opposite electrical properties; Preferably, when the perovskite component includes at least two groups of heterojunction layers, a tunneling composite layer is provided between two adjacent groups of heterojunction layers.

5. The perovskite component according to any one of claims 1 to 4, characterized in that: The thickness of the front electrode layer is 0.1-1000nm; Preferably, the thickness of each group of heterojunction layers is independently 0.3-3000 nm; Preferably, the thickness of the back electrode layer is 0.1-1000 nm.

6. The perovskite component according to any one of claims 1 to 5, characterized in that: In a group of heterojunction layers closest to the back electrode layer, the thickness of the first charge transport layer is 0.1-1000 nm; Preferably, in a group of heterojunction layers closest to the back electrode layer, the thickness of the perovskite layer is 0.1-1000 nm; Preferably, in a group of heterojunction layers closest to the back electrode layer, the thickness of the second charge transport layer is 0.1-1000 nm.

7. A method for processing a perovskite component according to any one of claims 1 to 6, characterized in that: The processing method comprises: (1) providing a perovskite component to be processed, the perovskite component to be processed comprising a substrate, and a front electrode layer to be processed, at least one group of heterojunction layers to be processed and a back electrode layer to be processed, which are sequentially stacked on the substrate; a group of heterojunction layers to be processed closest to the back electrode layer to be processed comprises a first charge transport layer to be processed, a perovskite layer to be processed and a second charge transport layer to be processed, which are sequentially stacked, and the second charge transport layer to be processed is in contact with the back electrode layer to be processed; the perovskite component to be processed is divided into an effective area and a processing area from the center to the edge; (2) The processing area is set to start from the edge of the effective area and expand outward by a first length as the first edge cleaning area, and a laser is used in the first edge cleaning area to perform a first edge cleaning along a direction perpendicular to the substrate to remove the second charge transfer layer to be processed and the back electrode layer to be processed in the first edge cleaning area; then the processing area is set to start from a second length from the edge of the effective area and expand outward to form a second edge cleaning area, and a laser is used in the second edge cleaning area to perform a second edge cleaning along a direction perpendicular to the substrate to remove all layers to be processed in the second edge cleaning area to obtain a perovskite component, wherein 0<second length≤first length.

8. The processing method according to claim 7, characterized in that: The power of the laser used in the first edge cleaning is less than the power of the laser used in the second edge cleaning.

9. The processing method according to claim 7 or 8, characterized in that: The wavelength of the laser used in the first edge cleaning is greater than 800nm; Preferably, the power of the laser used in the first edge cleaning is 1-400W; Preferably, the frequency of the laser used in the first edge cleaning is 10-1000 kHz.

10. The processing method according to any one of claims 7 to 9, characterized in that: The wavelength of the laser used in the second edge cleaning is greater than 800nm; Preferably, the power of the laser used in the second edge cleaning is 500-2000W; Preferably, the frequency of the laser used in the second edge cleaning is 1-500 kHz.

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