Preparation method of mesoporous structure based trans-structure perovskite solar cell and trans-structure perovskite solar cell

Abstract

The present application relates to the technical field of solar cells, and particularly relates to a preparation method of a trans-structure perovskite solar cell based on a mesoporous structure and the trans-structure perovskite solar cell. The preparation steps are as follows: etched transparent conductive glass is sequentially cleaned with a preset solution by ultrasonic, dried, and treated with ultraviolet ozone to obtain a transparent conductive oxide substrate; the transparent conductive oxide substrate is sequentially prepared with a hole transport layer, a mesoporous layer, and a self-assembled monomolecular material layer; a prepared perovskite precursor solution is spin-coated on the self-assembled monomolecular material layer, and an anti-solvent is added dropwise; the perovskite light absorption film layer is placed on a hot stage for annealing, which improves the wettability of the perovskite solution on the substrate, greatly improves the film-forming property of the perovskite film, and obtains a good interface energy level matching, improves the extraction rate of photo-generated carriers, reduces the non-radiative recombination loss at the interface, and thus a trans-structure perovskite solar cell suitable for large-area production is obtained.

Description

Technical Field

[0001] This invention relates to the field of solar cell technology, and in particular to a method for preparing a perovskite solar cell based on a mesoporous inverted structure, and a perovskite solar cell. Background Technology

[0002] In recent years, solar cells based on organic-inorganic hybrid perovskite materials have developed rapidly. Currently, the highest photoelectric conversion efficiency of a single-cell perovskite solar cell is 26.7%, which is very close to the best performance level of silicon-based solar cells. The structure of perovskite solar cells includes inverted structure and formal structure. The formal structure can be further divided into formal planar structure and formal mesoporous structure.

[0003] Compared to conventional perovskite solar cells, inverted perovskite solar cells offer advantages such as simpler fabrication processes, lower hysteresis, lower annealing temperatures, compatibility with flexible substrates, and the ability to construct high-efficiency tandem cells. Currently, most inverted perovskite solar cells are planar, with p-interface materials often being nickel oxide or self-assembled monolayers, and n-interface materials mostly being fullerenes and their derivatives (such as C60 and PCBM). Experiments have shown that the wettability of perovskite solutions on these materials, whether nickel oxide or self-assembled monolayer substrates, is not ideal. This can lead to pinholes on the perovskite film surface, causing short circuits, and poor perovskite film coverage, resulting in severe performance dispersion. These problems become even more pronounced when scaling up from small-area to large-area perovskite solar cells.

[0004] Perovskite solar cells containing mesoporous layers offer numerous advantages. Taking zirconia mesoporous layers as an example, the introduction of these layers significantly improves the wettability of the perovskite solution on the substrate, helping to obtain a uniformly covered, pinhole-free perovskite film. Secondly, the mesoporous zirconia layer prevents direct contact between the back electrode and the bottom charge transport layer or electrode layer, reducing the likelihood of short circuits. Furthermore, some conductive mesoporous materials, such as TiO2 mesoporous layers, can act as a support layer for the perovskite light-absorbing layer, increasing the contact area with the perovskite layer and thus improving electron extraction and transport efficiency. Currently, perovskite solar cells based on TiO2 mesoporous layers have achieved a photoelectric conversion efficiency of 26.5%. However, these formal perovskite solar cells suffer from drawbacks such as complex manufacturing processes, high hysteresis, high annealing temperatures, and unsuitability for flexible or tandem solar cells. Summary of the Invention

[0005] To address the shortcomings of existing technologies, this invention provides a method for fabricating a mesoporous inverted perovskite solar cell and a perovskite solar cell.

[0006] The present invention adopts the following technical solution:

[0007] A method for fabricating a mesoporous inverse perovskite solar cell includes the following:

[0008] step:

[0009] S1: Preparation of transparent conductive oxide substrate: The etched transparent conductive glass is ultrasonically cleaned sequentially with deionized water, acetone, glass cleaner, deionized water, and isopropanol; dried in a forced-air drying oven; the dried transparent conductive glass is treated with ultraviolet ozone to obtain a transparent conductive oxide substrate.

[0010] S2: Preparation of hole transport layer: The transparent conductive oxide substrate is placed in a glove box under a nitrogen atmosphere, and a hole transport layer is prepared on the transparent conductive oxide substrate by coating method; the hole transport layer is selected from one of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and self-assembled monolayer, and the material is prepared by solution method;

[0011] S3: Preparation of the mesoporous layer: One of Al2O3 or ZrO2 slurry was selected and stirred with Al2O3 and ZrO2 nanoparticle solutions and a dispersing solvent to form a solution. The nanoparticle size was set to 5 nm-500 nm, and the solution concentration was set to 0.1 mg / mL. -1 -20 mg mL -1 A mesoporous layer is prepared on the hole transport layer using a coating method;

[0012] S4: Preparation of self-assembled monomolecular material layers: At least one of the self-assembled monomolecular materials 2PACz, MeO-2PACz, and Me-4PACz is selected and mixed according to a preset ratio. The solvent is at least one of isopropanol and ethanol, with a concentration of 0.1 mg / mL. -1 -5 mg mL -1 After being mixed evenly, a self-assembled monomolecule material layer is prepared on the mesoporous layer by coating method.

[0013] S5: Preparation of perovskite light-absorbing thin film layer: After adding the perovskite precursor material to the corresponding solvent in a preset proportion, stir and vibrate to obtain a perovskite precursor solution;

[0014] The perovskite precursor solution was spin-coated onto the self-assembled monomolecule material layer using a spin coater. Chlorobenzene anti-solvent was added dropwise during spin coating. After spin coating, the obtained perovskite light-absorbing thin film layer was placed on a hot plate for annealing at a temperature of 100°C to 300°C for 5 min to 2 h.

[0015] S6: Fabrication of the electron transport layer:

[0016] The perovskite light-absorbing thin film layer was transferred to an organic material evaporation chamber, where an electron transport layer of C60 with a thickness of 10-50 nm was deposited, followed by the deposition of copper bath with a thickness of 2-10 nm at a deposition rate of 0.1-5 Å / s. -1 ;

[0017] S7: Fabrication of the metal electrode layer:

[0018] Metal electrodes are deposited in a metal evaporation chamber. The electrode material is selected from gold, silver, and copper, with a thickness of 60-200 nm and a deposition rate of 0.1-10 Å / s. -1 .

[0019] In some embodiments, in S1, the ultrasonic cleaning time intervals for deionized water, acetone, glass cleaner, deionized water, and isopropanol are set to 10-30 min, and the time is the same for all of them. The glass is then placed in a 60°C forced-air drying oven to dry, and the dried transparent conductive glass is treated with ultraviolet ozone for 15 min.

[0020] In some embodiments, in S1, the transparent conductive glass is selected from FTO or ITO conductive glass.

[0021] In some embodiments, in S2, a preset self-assembled monomolecule material is selected and added to an ethanol solvent to achieve a concentration of 0.1-5 mg / mL. -1 Using a spin coater, the solution is evenly coated onto the transparent conductive oxide substrate. The spin coating speed is 1000-10000 rpm and the spin coating time is 10-90 s. After spin coating, the substrate is transferred to a hot table at 80-150°C and heated for 5-30 min.

[0022] In some embodiments, in S3, a spin coater is used to uniformly coat the preset solution onto the hole transport layer. The spin coater speed is 1000-10000 rpm, the spin coater time is 10-90 s, and after spin coatering, the solution is transferred to a hot table at 80-300°C for 5-30 min.

[0023] In some embodiments, in S4, a spin coater is used to uniformly coat the pre-set solution onto the mesoporous layer. The spin coater speed is 1000-10000 rpm, the spin coater time is 10-90 s, and after spin coatering, the solution is transferred to a hot table at 80-300°C for 5-30 min.

[0024] In some embodiments, in S5, the perovskite precursor material is selected from lead iodide, lead bromide, formamidine iodide, methylamine bromide, cesium iodide, and rubidium iodide, mixed in a preset ratio, with a mixed solution of DMF and DMSO as the solvent, and stirred and vibrated in a preset ratio to obtain a perovskite precursor solution Rb. 0.05 Cs 0.05 MA 0.05 FA 0.85 Pb(I 0.95 Br 0.05 3;

[0025] A suitable amount of the perovskite precursor solution was spin-coated onto the self-assembled monomolecule material layer using a spin coater. The process of adding an anti-solvent during spin coating included:

[0026] First, a suitable amount of perovskite precursor solution is dropped onto the self-assembled monolayer. Then, a spin coater is turned on for the first step: the rotation speed is selected in the range of 300-1000 rpm, and the speed increase rate is 200 rpm / s. -1 Step 1: Time 10s; Step 2: Select a speed range of 2000-8000 rpm, with a speed increase rate of 2000 rpm per second. -1 The total spin coating time for the first and second steps is set to be 30-90 seconds. 150 μL of the antisolvent chlorobenzene is added 10 seconds before the end of the spin coating. The amount of antisolvent is 100 μL to 5 mL.

[0027] In some embodiments, in S6, the perovskite light-absorbing thin film layer is transferred to an organic material evaporation chamber, where an electron transport layer C60 with a thickness of 30 nm is deposited, followed by the deposition of a copper bath with a thickness of 7 nm at a deposition rate of 0.3 Å / s. -1 .

[0028] In some embodiments, in S7, a metal electrode is deposited in a metal evaporation chamber. The metal electrode material is silver, with a thickness of 100 nm, and the evaporation rate is 0.1-10 Å / s. -1 A stepped rate control was employed, with a rate of 0.1 Å s when the metal thickness was 0-10 nm. -1 When the thickness is 10-20 nm, the rate is 0.2 Å s. -1 When the thickness is 20-30 nm, the rate is 0.3 Å s. -1 When the thickness is 30-40 nm, the rate is 0.3 Å s. -1 When the thickness is 40-50 nm, the velocity is 0.4 Å s. -1 When the thickness is 50-60 nm, the velocity is 0.5 Å s. -1When the thickness is 60-70 nm, the velocity is 0.6 Å s. -1 When the thickness is 70-100 nm, the velocity is 1-10 Å s. -1 .

[0029] The present invention also includes an inverted perovskite solar cell, which is prepared using the above-described method for preparing an inverted perovskite solar cell based on a mesoporous structure. Beneficial effects

[0030] This invention discloses a method for fabricating a mesoporous inverted perovskite solar cell, a perovskite thin film, and an inverted perovskite solar cell. Compared with the prior art, this invention has the following advantages:

[0031] This invention discloses a method for fabricating high-performance inverted perovskite solar cells based on a mesoporous structure. By fabricating a mesoporous layer on a hole transport layer, and then fabricating a self-assembled monolayer on the mesoporous layer, the advantages of both the mesoporous layer and the self-assembled monolayer are comprehensively utilized. This improves the wettability of the perovskite solution on the substrate, significantly enhances the film-forming properties of the perovskite film, achieves good interfacial energy level matching, increases the extraction rate of photogenerated carriers, and reduces non-radiative recombination losses at the interface. This results in a highly efficient, stable, and high-yield inverted perovskite solar cell suitable for large-area production. Furthermore, the inverted perovskite solar cell offers advantages such as simple fabrication process, low hysteresis, low annealing temperature, compatibility with flexible substrates, and the ability to construct high-efficiency tandem cells. Experiments show that the photoelectric conversion efficiency of the inverted perovskite solar cell obtained using the process of this invention is 25.12%, with a yield of 98%, while the photoelectric conversion efficiency of existing inverted perovskite solar cells is only 23.51%, with a yield of only 60%. Attached Figure Description

[0032] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below, constituting a part of the present invention. The illustrative embodiments of the present invention and their descriptions explain the present invention and do not constitute an improper limitation of the present invention; in the accompanying drawings:

[0033] Figure 1 A flowchart illustrating the fabrication method of a mesoporous inverted perovskite solar cell according to an embodiment of the present invention;

[0034] Figure 2 This is a schematic diagram of the structure formed during the fabrication process of the inverted perovskite solar cell based on a mesoporous structure, as provided in an embodiment of the present invention.

[0035] Figure 3JV curve of an inverted perovskite solar cell provided for an embodiment of the invention. Detailed Implementation

[0036] The following description, in conjunction with the accompanying drawings, illustrates exemplary embodiments of the present invention, including various details to aid understanding. These details should be considered merely exemplary. Therefore, those skilled in the art will recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the invention. Similarly, for clarity and brevity, descriptions of well-known functions and structures are omitted in the following description.

[0037] In the description of this invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0038] like Figure 1 - Figure 3 As shown, the technical solution of the present invention is as follows:

[0039] A method for fabricating an inverted perovskite solar cell based on a mesoporous structure includes the following steps:

[0040] S1: Preparation of transparent conductive oxide substrate: The etched transparent conductive glass is ultrasonically cleaned sequentially with deionized water, acetone, glass cleaner, deionized water, and isopropanol; dried in a forced-air drying oven; the dried transparent conductive glass is treated with ultraviolet ozone to obtain a transparent conductive oxide substrate.

[0041] S2: Preparation of hole transport layer: The transparent conductive oxide substrate is placed in a glove box under a nitrogen atmosphere, and a hole transport layer is prepared on the transparent conductive oxide substrate by coating method; the hole transport layer is selected from one of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and self-assembled monolayer, and the material is prepared by solution method;

[0042] S3: Preparation of the mesoporous layer: One of Al2O3 or ZrO2 slurry was selected and stirred with Al2O3 and ZrO2 nanoparticle solutions and a dispersing solvent to form a solution. The nanoparticle size was set to 5 nm-500 nm, and the solution concentration was set to 0.1 mg / mL. -1 -20 mg mL -1A mesoporous layer is prepared on the hole transport layer using a coating method;

[0043] S4: Preparation of self-assembled monomolecular material layers: At least one of the self-assembled monomolecular materials 2PACz, MeO-2PACz, and Me-4PACz is selected and mixed according to a preset ratio. The solvent is at least one of isopropanol and ethanol, with a concentration of 0.1 mg / mL. -1 - 5 mg mL -1 After being mixed evenly, a self-assembled monomolecule material layer is prepared on the mesoporous layer by coating method.

[0044] S5: Preparation of perovskite light-absorbing thin film layer: After adding the perovskite precursor material to the corresponding solvent in a preset proportion, stir and vibrate to obtain a perovskite precursor solution;

[0045] The perovskite precursor solution was spin-coated onto the self-assembled monomolecule material layer using a spin coater. Chlorobenzene anti-solvent was added dropwise during spin coating. After spin coating, the obtained perovskite light-absorbing thin film layer was placed on a hot plate for annealing at a temperature of 100°C to 300°C for 5 min to 2 h.

[0046] S6: Fabrication of the electron transport layer:

[0047] The perovskite light-absorbing thin film layer was transferred to an organic material evaporation chamber, where an electron transport layer of C60 with a thickness of 10-50 nm was deposited, followed by the deposition of copper bath with a thickness of 2-10 nm at a deposition rate of 0.1-5 Å / s. -1 ;

[0048] S7: Fabrication of the metal electrode layer:

[0049] Metal electrodes are deposited in a metal evaporation chamber. The electrode material is selected from gold, silver, and copper, with a thickness of 60-200 nm and a deposition rate of 0.1-10 Å / s. -1 .

[0050] The preferred embodiments disclosed in this invention, such as... Figures 1-3 As shown:

[0051] This invention discloses a method for fabricating an inverted perovskite solar cell based on a mesoporous structure, comprising the following steps:

[0052] S1: Fabrication of transparent conductive oxide substrate:

[0053] The etched transparent conductive glass was ultrasonically cleaned sequentially with deionized water, acetone, glass cleaner, deionized water, and isopropanol. The transparent conductive glass is usually FTO or ITO conductive glass. In this embodiment, FTO transparent conductive glass was selected. The ultrasonic cleaning time was set to 10-30 min. In this embodiment, the ultrasonic cleaning time was set to 10 min. Then, it was placed in a 60°C forced-air drying oven to dry. The dried transparent conductive glass was treated with ultraviolet ozone for 15 min to obtain a transparent conductive oxide substrate.

[0054] S2: Fabrication of the hole transport layer:

[0055] The FTO transparent conductive oxide substrate is placed in a glove box with a nitrogen atmosphere and the water and oxygen content in the glove box is less than 0.01 ppm. A hole transport layer is prepared on the transparent conductive oxide substrate. The hole transport layer is made of one of the following materials: poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and self-assembled monolayer. The preparation method of the material includes solution method, sol-gel method, magnetron sputtering method, atomic layer deposition method, and combustion method. This invention selects solution method.

[0056] A self-assembled monolayer, MeO-2PACz, was selected and ethanol solvent was added to adjust the concentration to 0.1-5 mg / mL. -1 In this example, the concentration is 0.3 mg / mL. -1 Spin coaters, slot coaters, doctor blade coaters, and inkjet printers can be used. In this embodiment, a LEBO spin coater is selected. The spin speed is 1000-10000 rpm, and in this embodiment, it is set to 3000 rpm. The spin time is 10-90 seconds, and in this embodiment, it is set to 30 seconds. After spin coating, the spin coater is transferred to a 100°C hot table for 10 minutes. In this embodiment, the spin speed is 3000 rpm, the spin time is 30 seconds, and after spin coating, the spin coater is transferred to an 80-150°C hot table for 5-30 minutes. In this embodiment, the spin coater is selected to be heated at 100°C for 10 minutes.

[0057] S3: Preparation of the mesoporous layer:

[0058] One of Al2O3 slurry or ZrO2 slurry is selected; in this embodiment, Al2O3 slurry is selected. The mixture is stirred and vibrated with Al2O3 and ZrO2 nanoparticle solutions and a dispersing solvent to form a solution. The nanoparticle size is set to 5 nm-500 nm, and the solution concentration is set to 0.1 mg / mL. -1 -20 mg mL -1 In this embodiment, nanoparticles with a size of 50 nm were selected, ethanol was used as the dispersing solvent, and the solution concentration was 10 mg / mL. -1The preset solution is evenly coated onto the hole transport layer using a spin coater. The spin coater speed is 1000-10000 rpm, and in this embodiment, the spin coater speed is 3000 rpm. The spin coater time is 10-90 s, and the spin coater time is 30 s. After spin coatering, the solution is transferred to a hot stage at 80-300°C and heated for 5-30 min. In this embodiment, a hot stage at 100°C is selected and heated for 10 min.

[0059] S4: Preparation of self-assembled monolayer materials:

[0060] At least one of the self-assembled monomolecular materials 2PACz, MeO-2PACz, and Me-4PACz is selected and mixed in a predetermined ratio. The solvent is at least one of isopropanol and ethanol, with a concentration of 0.1 mg / mL. -1 Up to 5 mg mL -1 In this embodiment, the self-assembled single-molecule material selected is MeO-2PACz, with a concentration of 0.3 mg / mL. -1 The solvent is ethanol. After mixing evenly, the preset solution is evenly coated onto the mesoporous layer using a spin coater. The spin coating speed is 1000-10000 rpm and the spin coating time is 10-90 s. In this embodiment, the spin coating speed is 3000 rpm and the spin coating time is 30 s. After spin coating, the solution is transferred to a hot stage at 80-300°C and heated for 5-30 min. In this embodiment, the solution is heated to 100°C for 10 min.

[0061] S5: Preparation of perovskite light-absorbing thin film layer:

[0062] After adding the perovskite precursor material to the corresponding solvent in a preset proportion, the mixture is stirred and vibrated to obtain a perovskite precursor solution.

[0063] The perovskite precursor materials selected are lead iodide (PbI₂), lead bromide (PbBr₂), formamidine iodide (FAI), methylamine bromide (MABr), cesium iodide (CsI), and rubidium iodide (RbI), mixed in a predetermined ratio. For example, to prepare 1 mL of perovskite solution, 19.5 mg CsI, 15.9 mg RbI, 8.4 mg MABr, 219.5 mg FAI, 656.9 mg PbI₂, and 27.5 mg PbBr₂ are added, with a concentration of 1.5 M. The solvent is a mixed solution of DMF and DMSO, with a DMF:DMSO ratio of 4:1. The mixture is stirred and shaken to obtain the perovskite precursor solution Rb. 0.05 Cs 0.05 MA 0.05 FA 0.85 Pb(I 0.95 Br 0.05 3.

[0064] A suitable amount of the perovskite precursor solution was spin-coated onto the self-assembled monomolecule material layer using a spin coater. Chlorobenzene anti-solvent was added dropwise during the spin coating process. The process included:

[0065] First, a suitable amount of perovskite precursor solution is dropped onto the self-assembled monomolecule material layer, and then the spin coater is turned on for spin coating:

[0066] Step 1: Select a speed range of 300-1000 rpm, with a speed increase rate of 200 rpm per second. -1 The time is 10 seconds, and the rotation speed is selected as 1000 rpm in this embodiment;

[0067] Step 2: Select a speed range of 2000-8000 rpm, with a speed increase rate of 2000 rpm per second. -1 In this embodiment, the rotation speed is selected as 5000 rpm; the total spin coating time range of the first and second steps is set to 30-90s, and in this embodiment, the total spin coating time is selected as 35s; the amount of antisolvent is 100 μL to 5 mL, and 150 μL of antisolvent chlorobenzene is added dropwise 10 s before the end of spin coating. The film is placed on a hot plate with a temperature of 100℃ to 300℃, and the annealing time is 5 min to 2 h. In this embodiment, the film is placed on a hot plate with a temperature of 100℃, and the annealing time is 30 min.

[0068] S6: Fabrication of the electron transport layer:

[0069] The perovskite light-absorbing thin film layer was transferred to an organic material evaporation chamber, where an electron transport layer of C60 with a thickness of 10-50 nm was deposited (30 nm in this embodiment). Following this, copper bath ester (BCP) with a thickness of 2-10 nm (7 nm in this embodiment) was deposited at a deposition rate of 0.1-5 Å / s. -1 The evaporation rate is 0.3 Å s. -1 .

[0070] S7: Fabrication of the metal electrode layer:

[0071] Metal electrodes are deposited in a metal evaporation chamber. The electrode material is selected from gold, silver, and copper, with a thickness of 60-200 nm and a deposition rate of 0.1-10 Å / s. -1 In this embodiment, silver is selected as the vapor-deposited metal electrode material, with a thickness of 100 nm. A stepped rate control is used, with a rate of 0.1 Å / s when the vapor-deposited metal thickness is 0-10 nm. -1 When the thickness is 10-20 nm, the velocity is 0.2 Å s. -1 When the thickness is 20-30 nm, the rate is 0.3 Å s. -1When the thickness is 30-40 nm, the rate is 0.3 Å s. -1 When the thickness is 40-50 nm, the velocity is 0.4 Å s. -1 When the thickness is 50-60 nm, the velocity is 0.5 Å s. -1 When the thickness is 60-70 nm, the velocity is 0.6 Å s. -1 When the thickness is 70-100 nm, the velocity is 1-10 Å s. -1 ,like Figure 1 , Figure 2 As shown.

[0072] Inverted perovskite solar cells were fabricated using a method based on mesoporous structures.

[0073] Experiments showed that the photoelectric conversion efficiency of the inverted perovskite solar cell obtained based on the process of this invention was 25.12%, with a yield rate of 98%. Figure 3 As shown; Figure 3 The image shows the JV curve of the inverted perovskite solar cell according to an embodiment of the present invention; while the photoelectric conversion efficiency of the inverted perovskite solar cell in the prior art is 23.51%, and the yield is only 60%.

[0074] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of the present invention.

Claims

1. A method for fabricating an inverted perovskite solar cell based on a mesoporous structure, characterized in that: Includes the following steps: S1: Preparation of transparent conductive oxide substrate: The etched transparent conductive glass is ultrasonically cleaned sequentially with deionized water, acetone, glass cleaner, deionized water, and isopropanol; dried in a forced-air drying oven; the dried transparent conductive glass is treated with ultraviolet ozone to obtain a transparent conductive oxide substrate. S2: Preparation of hole transport layer: The transparent conductive oxide substrate is placed in a glove box under a nitrogen atmosphere, and a hole transport layer is prepared on the transparent conductive oxide substrate by coating method; the hole transport layer is selected from one of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and self-assembled monolayer, and the material is prepared by solution method; S3: Preparation of the mesoporous layer: One of Al2O3 or ZrO2 slurry was selected and stirred with Al2O3 and ZrO2 nanoparticle solutions and a dispersing solvent to form a solution. The nanoparticle size was set to 5 nm-500 nm, and the solution concentration was set to 0.1 mg / mL. -1 -20 mg mL -1 A mesoporous layer is prepared on the hole transport layer using a coating method; S4: Preparation of self-assembled monomolecular material layers: At least one of the self-assembled monomolecular materials 2PACz, MeO-2PACz, and Me-4PACz is selected and mixed according to a preset ratio. At least one of isopropanol and ethanol is selected as the solvent, with a concentration of 0.1 mg / mL. -1 - 5 mg mL -1 After being mixed evenly, a self-assembled monomolecule material layer is prepared on the mesoporous layer by coating method. S5: Preparation of perovskite light-absorbing thin film layer: After adding the perovskite precursor material to the corresponding solvent in a preset proportion, stir and vibrate to obtain a perovskite precursor solution; The perovskite precursor solution was spin-coated onto the self-assembled monomolecule material layer using a multi-step continuous spin-coating method with a spin coater. Chlorobenzene anti-solvent was added dropwise during spin-coating. After spin-coating, the obtained perovskite light-absorbing thin film layer was placed on a hot plate for annealing at a temperature of 100°C to 300°C for 5 min to 2 h. S6: Preparation of the electron transport layer: The perovskite light-absorbing thin film layer is transferred to an organic material evaporation chamber, and an electron transport layer C60 with a thickness of 10-50 nm is deposited by evaporation. Subsequently, a copper bath with a thickness of 2-10 nm is deposited at a evaporation rate of 0.1-5 Å / s. -1 ; S7: Preparation of the metal electrode layer: Metal electrodes are deposited in a metal evaporation chamber. The metal electrode material is selected from gold, silver, and copper, with a thickness of 60-200 nm and a deposition rate of 0.1-10 Å / s. -1 .

2. The method for fabricating a mesoporous inverted perovskite solar cell according to claim 1, characterized in that: In S1, the ultrasonic cleaning time range for deionized water, acetone, glass cleaner, deionized water and isopropanol is set to 10-30 min, and the time is the same for all of them. The glass is then dried in a 60℃ forced-air drying oven. The dried transparent conductive glass is then treated with ultraviolet ozone for 15 min.

3. The method for fabricating a mesoporous inverted perovskite solar cell according to claim 1, characterized in that: In S1, the transparent conductive glass is selected from FTO or ITO conductive glass.

4. The method for fabricating a mesoporous inverted perovskite solar cell according to claim 1, characterized in that: In S2, a pre-selected self-assembled monomolecule material is added to an ethanol solvent to achieve a concentration of 0.1-5 mg / mL. -1 Using a spin coater, the solution is evenly coated onto the transparent conductive oxide substrate. The spin coating speed is 1000-10000 rpm and the spin coating time is 10-90 s. After spin coating, the substrate is transferred to a hot table at 80-150°C and heated for 5-30 min.

5. The method for fabricating a mesoporous inverted perovskite solar cell according to claim 1, characterized in that: In step S3, a spin coater is used to evenly coat the preset solution onto the hole transport layer. The spin coater speed is 1000-10000 rpm and the spin coater time is 10-90 s. After spin coatering, the solution is transferred to a hot table at 80-300°C and heated for 5-30 min.

6. The method for fabricating a mesoporous inverse perovskite solar cell according to claim 1, characterized in that: In step S4, a spin coater is used to evenly coat the pre-set solution onto the mesoporous layer. The spin coater speed is 1000-10000 rpm and the spin coater time is 10-90 s. After spin coatering, the solution is transferred to a hot table at 80-300°C and heated for 5-30 min.

7. The method for fabricating a mesoporous inverted perovskite solar cell according to claim 1, characterized in that: In step S5, the perovskite precursor material is selected from lead iodide, lead bromide, formamidine iodide, methylamine bromide, cesium iodide, and rubidium iodide, which are mixed in a preset ratio. The solvent is a mixed solution of DMF and DMSO. The mixture is stirred and shaken in a preset ratio to obtain the perovskite precursor solution Rb. 0.05 Cs 0.05 MA 0.05 FA 0.85 Pb(I 0.95 Br 0.05 3; A suitable amount of the perovskite precursor solution was spin-coated onto the self-assembled monomolecule material layer using a spin coater. The process of adding an anti-solvent during spin coating included: First, a suitable amount of perovskite precursor solution is dropped onto the self-assembled monolayer. Then, a spin coater is turned on for the first step: the rotation speed is selected in the range of 300-1000 rpm, and the speed increase rate is 200 rpm / s. -1 Step 1: Time 10s; Step 2: Select a speed range of 2000-8000 rpm, with a speed increase rate of 2000 rpm per second. -1 The total spin coating time for the first and second steps is set to be 30-90 seconds. 150 μL of the antisolvent chlorobenzene is added 10 seconds before the end of the spin coating. The amount of antisolvent is 100 μL to 5 mL.

8. The method for fabricating a mesoporous inverted perovskite solar cell according to claim 1, characterized in that: In step S6, the perovskite light-absorbing thin film layer is transferred to an organic material evaporation chamber, where an electron transport layer C60 with a thickness of 30 nm is deposited, followed by the deposition of a copper bath with a thickness of 7 nm at a deposition rate of 0.3 Å / s. -1 .

9. The method for fabricating a mesoporous inverted perovskite solar cell according to claim 1, characterized in that: In S7 Metal electrodes were deposited in a metal evaporation chamber. The electrode material was silver, with a thickness of 100 nm, and the deposition rate was 0.1–10 Å / s. -1 A stepped rate control was employed, with a rate of 0.1 Å s when the metal thickness was 0-10 nm. -1 When the thickness is 10-20 nm, the rate is 0.2 Å s. -1 When the thickness is 20-30 nm, the rate is 0.3 Å s. -1 When the thickness is 30-40 nm, the rate is 0.3 Å s. -1 When the thickness is 40-50 nm, the velocity is 0.4 Å s. -1 When the thickness is 50-60 nm, the velocity is 0.5 Å s. -1 When the thickness is 60-70 nm, the velocity is 0.6 Å s. -1 When the thickness is 70-100 nm, the velocity is 1-10 Å s. -1 .

10. A trans-structured perovskite solar cell, characterized in that, It is prepared using the method for preparing a mesoporous inverted perovskite solar cell according to any one of claims 1-9.

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