Method for manufacturing display device and laser ablation device

Abstract

The invention relates to a method for manufacturing a display device and a laser ablation device. A method for manufacturing a display device includes: forming a flexible substrate on a first side of a carrier substrate; forming a display element layer on the flexible substrate; sequentially irradiating a first laser beam and a second laser beam at a first time interval to a second side of the carrier substrate opposite to the first side in a first region of the carrier substrate that overlaps or is adjacent to an edge portion of the flexible substrate in a plan view; and sequentially irradiating the first laser beam and the second laser beam at a second time interval different from the first time interval in a second region of the carrier substrate in which the display element layer is formed.

Description

Technical Field

[0001] Embodiments generally provide a method for manufacturing a display device and a laser ablation device. More particularly, embodiments relate to a method for manufacturing a flexible display device and a laser ablation device. Background Art

[0002] As information technology develops, the importance of display devices as a communication medium between users and information is becoming increasingly prominent. Therefore, the use of display devices such as liquid crystal display devices, organic light emitting display devices, plasma display devices, etc. is increasing.

[0003] A display device can be implemented as flexible using a plastic substrate having excellent flexibility. However, since the flexible substrate has great flexibility, it is desirable to support the flexible substrate during the manufacturing process of the display device. Therefore, after the flexible substrate is formed on a carrier substrate made of a material such as glass, the display device manufacturing process is performed, and then the carrier substrate is removed.

[0004] The carrier substrate can be removed by various methods. For example, as a method for removing the carrier substrate, a laser lift-off method using laser is being actively studied. Summary of the invention

[0005] An embodiment provides a method of manufacturing a display device using an excimer laser.

[0006] An embodiment provides a laser ablation apparatus used in a method for manufacturing a display apparatus.

[0007] A method for manufacturing a display device according to an embodiment of the present disclosure includes: forming a flexible substrate on a first side of a carrier substrate; forming a display element layer on the flexible substrate; sequentially irradiating a first laser beam and a second laser beam at a first time interval toward a second side of the carrier substrate opposite to the first side in a first region of the carrier substrate that overlaps or is adjacent to an edge portion of the flexible substrate in a plan view; and sequentially irradiating the first laser beam and the second laser beam at a second time interval different from the first time interval in a second region of the carrier substrate where the display element layer is formed.

[0008] In an embodiment, the first time interval may be smaller than the second time interval.

[0009] In an embodiment, the energy intensity of the first laser beam may be substantially the same as the energy intensity of the second laser beam.

[0010] In an embodiment, each of the first laser beam and the second laser beam may be an excimer laser.

[0011] In an embodiment, the method may further include: after forming the display element layer, placing the flexible substrate on which the display element layer is formed and the carrier substrate on a stage. While irradiating the first laser beam and the second laser beam, the stage may move in one direction together with the carrier substrate, the flexible substrate and the display element layer.

[0012] In an embodiment, a moving speed of the stage when the first laser beam and the second laser beam irradiate the first region may be different from a moving speed of the stage when the first laser beam and the second laser beam irradiate the second region.

[0013] In an embodiment, a moving speed of the stage when the first laser beam and the second laser beam irradiate the first region may be lower than a moving speed of the stage when the first laser beam and the second laser beam irradiate the second region.

[0014] In an implementation, the flexible substrate may include a first polyimide layer and a second polyimide layer formed on the first polyimide layer.

[0015] In an embodiment, when the first laser beam and the second laser beam are sequentially irradiated at a first time interval and sequentially irradiated at a second time interval, the first laser beam and the second laser beam may irradiate the carrier substrate using a scanning method.

[0016] In an embodiment, when the first laser beam and the second laser beam are sequentially irradiated at a first time interval and sequentially irradiated at a second time interval, the first laser beam and the second laser beam may irradiate the carrier substrate in a direction parallel to a long side of the carrier substrate using a scanning method.

[0017] In an embodiment, each of the first laser beam and the second laser beam may have a line beam shape in a plan view.

[0018] In an embodiment, after irradiating the first laser beam and the second laser beam toward the second side of the carrier substrate, the carrier substrate may be ablated from the flexible substrate.

[0019] In an embodiment, the carrier substrate may include glass.

[0020] A laser ablation device according to an embodiment of the present disclosure includes: a stage on which a carrier substrate, a flexible substrate disposed on a first side of the carrier substrate, and a display element layer disposed on the flexible substrate are disposed; and a light source portion configured to sequentially irradiate a first laser beam and a second laser beam at a first time interval in a first region of the carrier substrate that overlaps or is adjacent to an edge portion of the flexible substrate in a plan view toward a second side of the carrier substrate that is opposite to the first side, and sequentially irradiate the first laser beam and the second laser beam at a second time interval different from the first time interval in a second region of the carrier substrate where the display element layer is disposed.

[0021] In an embodiment, the first time interval may be smaller than the second time interval.

[0022] In an embodiment, the energy intensity of the first laser beam may be substantially the same as the energy intensity of the second laser beam.

[0023] In an embodiment, each of the first laser beam and the second laser beam may be an excimer laser.

[0024] In an embodiment, the laser ablation apparatus may further include a transfer portion configured to move the stage together with the carrier substrate, the flexible substrate, and the display element layer in one direction when the first laser beam and the second laser beam are irradiated.

[0025] In an embodiment, a moving speed of the stage when the first laser beam and the second laser beam irradiate the first region may be different from a moving speed of the stage when the first laser beam and the second laser beam irradiate the second region.

[0026] In an implementation, the flexible substrate may include a first polyimide layer and a second polyimide layer disposed on the first polyimide layer.

[0027] In the method for manufacturing a display device according to an embodiment of the present disclosure, the first laser beam and the second laser beam may be sequentially irradiated toward one side of the carrier substrate at a first time interval in a first region and a third region overlapping or adjacent to an edge portion of the flexible substrate in a plan view, and the first laser beam and the second laser beam may be sequentially irradiated toward one side of the carrier substrate at a second time interval different from the first time interval in a second region where a display element layer is formed. The first time interval may be smaller than the second time interval. Therefore, the carrier substrate may be easily ablated from the flexible substrate. In addition, foreign matter due to the organic insulating layer may not be generated in a region overlapping or adjacent to an edge portion of the flexible substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Illustrative, non-limiting embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings.

[0029] Figure 1 , Figure 2 , Figure 3 and Figure 4 is a cross-sectional view for explaining a method for manufacturing a display device according to an embodiment of the present disclosure.

[0030] Figure 5 yes Figure 3 An enlarged cross-sectional view of area A.

[0031] Figure 6is a cross-sectional view showing a laser ablation device according to an embodiment of the present disclosure.

[0032] Figure 7 is a plan view illustrating a method of ablating a carrier substrate from a flexible substrate using a first laser beam and a second laser beam.

[0033] Figure 8 It is used to explain Figure 6 A graph of the moving speed of the platform over time.

[0034] Fig. 9 is the explanation Figure 6 and Figure 7 A waveform diagram of an oscillation signal of each of the first laser beam and the second laser beam over time.

[0035] Fig.10 is the explanation Fig. 9 A graph of the energy intensity of each of the first laser beam and the second laser beam over time. DETAILED DESCRIPTION

[0036] The terms used herein are only used for the purpose of describing specific embodiments, rather than being intended to be limited. As used herein, "one", "the", "at least one" do not represent the limitation of quantity, and are intended to include both the singular and the plural, unless the context clearly indicates otherwise. For example, "an element" has the same meaning as "at least one element", unless the context clearly indicates otherwise. "At least one" should not be interpreted as limiting "one" or "one". "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items. It will also be understood that the terms "comprising" and / or "comprising", or "comprising" and / or "comprising" when used in this specification, specify the existence of stated features, regions, wholes, steps, operations, elements and / or parts, but do not exclude the existence or addition of one or more other features, regions, wholes, steps, operations, elements, parts and / or their groups.

[0037] It will be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, without departing from the teachings herein, the "first element", "first component", "first region", "first layer" or "first section" discussed below may be referred to as a second element, second component, second region, second layer or second section.

[0038] It will be understood that when an element is referred to as being "on" or "connected to" another element, it can be directly on or directly connected to the other element, or intervening elements may exist between them. Conversely, when an element is referred to as being "directly on" another element, there are no intervening elements.

[0039] As used herein, "about" or "approximately" includes the stated value and means within an acceptable range of deviation for the particular value determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "substantially the same" can mean within one or more standard deviations, such as within ±30%, ±20%, ±10%, ±5% of the stated value.

[0040] Hereinafter, a method for manufacturing a display device and a laser ablation device according to an embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same components in the drawings, and redundant descriptions of the same components will be omitted.

[0041] Figure 1 , Figure 2 , Figure 3 and Figure 4 is a cross-sectional view for explaining a method for manufacturing a display device according to an embodiment of the present disclosure.

[0042] refer to Figure 1 , a carrier substrate CS may be provided. The carrier substrate CS may include a rigid material to be used as a support during the manufacturing process of the display device DD. In addition, the carrier substrate CS may include a transparent material because it is desired that light can be transmitted during the separation process of the carrier substrate CS.

[0043] In an embodiment, the carrier substrate CS may include glass. Specifically, the carrier substrate CS may include a 2 ) as a main component. For example, the carrier substrate CS may include borosilicate glass, fused silica glass, quartz glass, etc. These may be used alone or in combination with each other.

[0044] A flexible substrate FS may be formed on the first surface S1 of the carrier substrate CS. For example, the flexible substrate FS may be formed by coating a polyimide solution on the carrier substrate CS using a spin coating method and then curing the polyimide solution. Alternatively, the flexible substrate FS may be formed by attaching a film-type polyimide substrate to the carrier substrate CS with an adhesive material or by lamination. However, embodiments of the present disclosure are not necessarily limited thereto.

[0045] refer to Figure 2, a display element layer DL may be formed on the flexible substrate FS. For example, the display element layer DL may include at least one circuit element (eg, Figure 5 A transistor TR) and at least one light emitting element driven by the circuit element (e.g., Figure 5 Light emitting element LED).

[0046] An encapsulation layer EN may be formed on the display element layer DL. The encapsulation layer EN may prevent impurities, moisture, etc. from penetrating into the display element layer DL from the outside. Thus, a display device DD including the flexible substrate FS, the display element layer DL, and the encapsulation layer EN may be manufactured.

[0047] refer to Figure 3 , a protection film PF may be formed on the encapsulation layer EN. The protection film PF may prevent the encapsulation layer EN from being damaged during a separation process of the carrier substrate CS. The protection film PF may be removed after the carrier substrate CS is separated.

[0048] In an embodiment, in a process of manufacturing the display device DD, the flexible substrate FS, the display element layer DL, and the encapsulation layer EN may be sequentially formed on the carrier substrate CS in a thickness direction (ie, the third direction DR3 ).

[0049] After forming the protection film PF on the encapsulation layer EN, the carrier substrate CS on which the display device DD and the protection film PF are formed may be disposed on a stage (eg, Figure 6 on the platform 100).

[0050] After the carrier substrate CS is disposed on the stage, the carrier substrate CS may be separated from the display device DD. The separation process of the carrier substrate CS may be divided into ablating the carrier substrate CS and removing the ablated carrier substrate CS.

[0051] When abling the carrier substrate CS, a laser beam having a predetermined energy intensity may be irradiated to the interface between the carrier substrate CS and the flexible substrate FS. In this case, the laser beam having the predetermined energy intensity may be absorbed on the side of the flexible substrate FS facing the first surface S1 of the carrier substrate CS. If the absorbed energy exceeds a certain level, the carrier substrate CS may be ablated from the flexible substrate FS. A detailed description of this will be provided later.

[0052] refer to Figure 4 , after ablating the carrier substrate CS from the flexible substrate FS, the carrier substrate CS may be removed.

[0053] Figure 5 yes Figure 3 For example, Figure 5 yes Figure 3Specifically, Figure 5 It is a schematic diagram showing the arrangement of Figure 3 A cross-sectional view of a region of one pixel of a display device DD.

[0054] refer to Figure 3 and Figure 5 The display device DD may include a flexible substrate FS, a display element layer DL and an encapsulation layer EN. The display element layer DL may include a buffer layer BFR, a transistor TR, a gate insulating layer GI, an interlayer insulating layer ILD, a via insulating layer VIA, a pixel defining layer PDL and a light emitting element LED.

[0055] Here, the transistor TR may include an active pattern ACT, a gate electrode GAT, a source electrode SE, and a drain electrode DE, and the light emitting element LED may include an anode electrode ADE, a light emitting layer EL, and a cathode electrode CTE.

[0056] The flexible substrate FS may include a transparent material or an opaque material. The flexible substrate FS may be made of a transparent resin substrate. Examples of the transparent resin substrate include a polyimide substrate.

[0057] In an embodiment, the flexible substrate FS may include a first polyimide layer PI1, a barrier layer BAR disposed on the first polyimide layer PI1, and a second polyimide layer PI2 disposed on the barrier layer BAR. The barrier layer BAR may prevent moisture penetration, etc. For example, the barrier layer BAR may include an inorganic material.

[0058] For example, each of the first polyimide layer PI1 and the second polyimide layer PI2 may include colored polyimide. Alternatively, each of the first polyimide layer PI1 and the second polyimide layer PI2 may include transparent polyimide.

[0059] The buffer layer BFR may be disposed on the flexible substrate FS. The buffer layer BFR may prevent metal atoms or impurities from diffusing from the flexible substrate FS to the transistor TR. In addition, when the surface of the flexible substrate FS is uneven, the buffer layer BFR may improve the flatness of the surface of the flexible substrate FS. For example, the buffer layer BFR may include an inorganic material such as silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ) etc. These may be used alone or in combination with each other.

[0060] The active pattern ACT may be disposed on the buffer layer BFR. The active pattern ACT may include a metal oxide semiconductor, an inorganic semiconductor (eg, amorphous silicon, polycrystalline silicon, etc.), or an organic semiconductor. The active pattern ACT may include a source region, a drain region, and a channel region between the source region and the drain region.

[0061] Metal oxide semiconductors may include binary compounds (AB) containing indium (In), zinc (Zn), gallium (Ga), tin (Sn), titanium (Ti), aluminum (Al), hafnium (Hf), zirconium (Zr), magnesium (Mg), etc. x ), ternary compounds (AB x C y ), quaternary compounds (AB x C y D z ) etc. For example, the metal oxide semiconductor may include zinc oxide (ZnO x (For example, ZnO or ZnO 2 )), gallium oxide (GaO x ), tin oxide (SnO x ), indium oxide (InO x ), indium gallium oxide ("IGO"), indium zinc oxide ("IZO"), indium tin oxide ("ITO"), indium zinc tin oxide ("IZTO"), indium gallium zinc oxide ("IGZO"), etc. These may be used alone or in combination with each other.

[0062] The gate insulating layer GI may be disposed on the buffer layer BFR. The gate insulating layer GI may fully cover the active pattern ACT and may have a substantially flat upper surface without generating steps around the active pattern ACT. Alternatively, the gate insulating layer GI may cover the active pattern ACT and may be disposed with a uniform thickness along the contour of the active pattern ACT. For example, the gate insulating layer GI may include an inorganic material such as silicon oxide (SiO x ), Silicon Nitride (SiN x ), Silicon Carbide (SiC x ), silicon oxynitride (SiO x N y ), Silicon Oxycarbide (SiO x C y ) etc. These may be used alone or in combination with each other.

[0063] The gate electrode GAT may be disposed on the gate insulating layer GI. In a plan view, the gate electrode GAT may overlap with the channel region of the active pattern ACT. The gate electrode GAT may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. Examples of metals may include silver (Ag), molybdenum (Mo), aluminum (Al), tungsten (W), copper (Cu), nickel (Ni), chromium (Cr), titanium (Ti) and tantalum (Ta), platinum (Pt), scandium (Sc), and the like. Examples of conductive metal oxides may include indium tin oxide, indium zinc oxide, and the like. In addition, examples of metal nitrides may include aluminum nitride (AlN x ), tungsten nitride (WN x ), chromium nitride (CrN x ) etc. These may be used alone or in combination with each other.

[0064] The interlayer insulating layer ILD may be disposed on the gate insulating layer GI. The interlayer insulating layer ILD may fully cover the gate electrode GAT and may have a substantially flat upper surface without generating steps around the gate electrode GAT. Alternatively, the interlayer insulating layer ILD may cover the gate electrode GAT and may be disposed with a uniform thickness along the contour of the gate electrode GAT. For example, the interlayer insulating layer ILD may include an inorganic material such as silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon oxycarbide, etc. These may be used alone or in combination with each other.

[0065] The source electrode SE and the drain electrode DE may be disposed on the interlayer insulating layer ILD. The source electrode SE may be connected to the source region of the active pattern ACT through a contact hole penetrating the gate insulating layer GI and the first portion of the interlayer insulating layer ILD, and the drain electrode DE may be connected to the drain region of the active pattern ACT through a contact hole penetrating the gate insulating layer GI and the second portion of the interlayer insulating layer ILD. For example, each of the source electrode SE and the drain electrode DE may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. These may be used alone or in combination with each other.

[0066] Thus, a transistor TR including an active pattern ACT, a gate electrode GAT, a source electrode SE, and a drain electrode DE may be provided on the flexible substrate FS.

[0067] The via insulating layer VIA may be disposed on the interlayer insulating layer ILD. The via insulating layer VIA may fully cover the source electrode SE and the drain electrode DE. The via insulating layer VIA may include an inorganic material or an organic material. In an embodiment, the via insulating layer VIA may include an organic material. For example, the via insulating layer VIA may include an organic material such as a phenolic resin, a polyacrylate resin, a polyimide resin, a polyamide resin, a siloxane resin, an epoxy resin, etc. These may be used alone or in combination with each other.

[0068] The anode electrode ADE may be disposed on the via insulating layer VIA. The anode electrode ADE may be connected to the drain electrode DE (or the source electrode SE) through a contact hole penetrating the via insulating layer VIA. For example, the anode electrode ADE may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. These may be used alone or in combination with each other. In an embodiment, the anode electrode ADE may have a stacked structure including ITO / Ag / ITO. However, embodiments of the present disclosure are not necessarily limited thereto.

[0069] The pixel defining layer PDL may be disposed on the via insulating layer VIA. The pixel defining layer PDL may cover the edge of the anode electrode ADE. In addition, an opening exposing at least a portion of the upper surface of the anode electrode ADE may be defined in the pixel defining layer PDL. For example, the pixel defining layer PDL may include an inorganic material or an organic material. In an embodiment, the pixel defining layer PDL may include an organic material such as an epoxy resin, a silicone resin, or the like. These may be used alone or in combination with each other. In another embodiment, the pixel defining layer PDL may include an inorganic material and / or an organic material containing a light blocking material, such as a black pigment, a black dye, or the like.

[0070] The light emitting layer EL may be disposed on the anode electrode ADE. Specifically, the light emitting layer EL may be disposed in the opening of the pixel defining layer PDL. The light emitting layer EL may include an organic material that emits light of a predetermined color. For example, the light emitting layer EL may include an organic material that emits red light, green light, or blue light.

[0071] The cathode electrode CTE may be disposed on the pixel defining layer PDL and the light emitting layer EL. For example, the cathode electrode CTE may include metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, etc. These may be used alone or in combination with each other.

[0072] Therefore, a light emitting element LED including an anode electrode ADE, a light emitting layer EL, and a cathode electrode CTE may be provided on the flexible substrate FS. The light emitting element LED may be electrically connected to the transistor TR.

[0073] The encapsulation layer EN may be disposed on the cathode electrode CTE. The encapsulation layer EN may include at least one inorganic layer and at least one organic layer. For example, the inorganic layer may include silicon oxide, silicon nitride, silicon oxynitride, etc. These may be used alone or in combination with each other. The organic layer may include a cured polymer such as polyacrylate, etc.

[0074] Figure 6 is a cross-sectional view showing a laser ablation device according to an embodiment of the present disclosure. Figure 6 is with Figure 3 and Figure 5Compared to an inverted view in which the second surface S2 of the carrier substrate CS faces the light source part 200 .

[0075] refer to Figure 6 , the laser ablation apparatus 1 may include a stage 100, a light source part 200, and a transfer part 300. The light source part 200 may be a laser generating device, and the transfer part 300 may be a device including a motor and configured to transfer the stage 100 or the light source part 200.

[0076] The carrier substrate CS, the display device DD disposed on the first surface S1 of the carrier substrate CS, and the protection film PF disposed on the display device DD may be disposed on the stage 100. The stage 100 may have a substantially flat upper surface. The display device DD attached to the carrier substrate CS may be disposed on the upper surface of the stage 100. In this case, the carrier substrate CS may be disposed to face the light source part 200, and the protection film PF may be disposed to face the stage 100.

[0077] The light source part 200 may irradiate the laser beam to the carrier substrate CS based on the oscillation signal. Specifically, the light source part 200 may irradiate the laser beam toward the second surface S2 of the carrier substrate CS opposite to the first surface S1 based on the oscillation signal. The laser beam may pass through the carrier substrate CS and be irradiated to the interface between the carrier substrate CS and the flexible substrate FS.

[0078] The laser beam may include a first laser beam LB1 and a second laser beam LB2. The light source part 200 may sequentially irradiate the first laser beam LB1 and the second laser beam LB2 to an interface between the carrier substrate CS and the flexible substrate FS at predetermined time intervals.

[0079] In an embodiment, each of the first laser beam LB1 and the second laser beam LB2 may be an excimer laser. For example, the excimer laser may be a xenon-chloride (XeCl) excimer laser that emits ultraviolet light of about 308 nanometers (nm). However, the embodiments of the present disclosure are not necessarily limited thereto, and various types of lasers may be applied to each of the first laser beam LB1 and the second laser beam LB2. The first laser beam LB1 may be referred to as a master laser, and the second laser beam LB2 may be referred to as a slave laser.

[0080] The transfer part 300 may move the stage 100 in one direction. When the stage 100 moves in one direction, the first laser beam LB1 and the second laser beam LB2 may irradiate the carrier substrate CS in a scanning method. That is, when irradiating the first laser beam LB1 and the second laser beam LB2, the stage 100 may move in one direction together with the carrier substrate CS, the display device DD, and the protective film PF. Specifically, the first laser beam LB1 and the second laser beam LB2 may pass through the carrier substrate CS and irradiate the entire interface between the carrier substrate CS and the flexible substrate FS in a scanning method. That is, the one direction may be a scanning direction.

[0081] Alternatively, the transfer part 300 may move the light source part 200 in the direction opposite to the one direction instead of moving the stage 100 , or may move both the stage 100 and the light source part 200 .

[0082] In summary, after the first laser beam LB1 and the second laser beam LB2 may pass through the carrier substrate CS and irradiate the entire interface between the carrier substrate CS and the flexible substrate FS in a scanning method, the carrier substrate CS may be ablated from the flexible substrate FS.

[0083] Figure 7 is a plan view illustrating a method of ablating a carrier substrate from a flexible substrate using a first laser beam and a second laser beam. As used herein, a "plan view" is a view in the thickness direction (ie, third direction DR3) of the flexible substrate FS. Figure 8 It is used to explain Figure 6 A graph of the moving speed of the platform over time. Fig. 9 is the explanation Figure 6 and Figure 7 A waveform diagram of an oscillation signal of each of the first laser beam and the second laser beam over time. Fig.10 is the explanation Fig. 9 A graph of the energy intensity of each of the first laser beam and the second laser beam over time.

[0084] refer to Figure 6 and Figure 7 As described above, the first laser beam LB1 and the second laser beam LB2 may pass through the carrier substrate CS and be irradiated on the entire interface of the carrier substrate CS and the flexible substrate FS along the scanning direction in a scanning method. Here, the scanning direction may be the second direction DR2.

[0085] In an embodiment, the light source part 200 may irradiate the first laser beam LB1 and the second laser beam LB2 in a scanning method in a direction parallel to the long side LS of the carrier substrate CS toward the second surface S2 of the carrier substrate CS. Here, the long side LS of the carrier substrate CS may extend along the second direction DR2, and the short side SS of the carrier substrate CS may extend in the first direction DR1 perpendicular to the second direction DR2. However, embodiments of the present disclosure are not necessarily limited thereto.

[0086] In an embodiment, each of the first laser beam LB1 and the second laser beam LB2 may have a line beam shape in a plan view. For example, each of the first laser beam LB1 and the second laser beam LB2 may have a line beam shape extending in a first direction DR1 perpendicular to the second direction DR2. However, embodiments of the present disclosure are not necessarily limited thereto.

[0087] When the flexible substrate FS is disposed on the carrier substrate CS, the carrier substrate CS may be divided into a first area A1, a second area A2, and a third area A3.

[0088] The first area A1 may be defined as an area overlapping or adjacent to an edge portion EP of the flexible substrate FS in a plan view. Figure 7 The first area A1 may include an edge region of the carrier substrate CS adjacent to the edge portion EP and may not include a region (ie, the display area DA) where the display element layer DL is disposed, in a plan view.

[0089] Similar to the first area A1, the third area A3 may be defined as an area overlapping or adjacent to another edge portion EP of the flexible substrate FS opposite to the edge portion EP (which overlaps the first area A1) in a plan view. The third area A3 may be an area facing the first area A1, and the second area A2 is between the third area A3 and the first area A1. Similar to the first area A1, the third area A3 may include another edge area of ​​the carrier substrate CS adjacent to the other edge portion EP, and does not include an area (i.e., a display area DA) where the display element layer DL is disposed.

[0090] The second area A2 may be an area located between the first area A1 and the third area A3. Specifically, the second area A2 may be an area including the display area DA where the display element layer DL is disposed.

[0091] That is, the light source part 200 may irradiate the first and second laser beams LB1 and LB2 to the entire interface of the carrier substrate CS and the flexible substrate FS in the order of the first, second, and third areas A1, A2, and A3 along the scanning direction in a scanning method.

[0092] As described above, the stage 100 may be moved in one direction (eg, the second direction DR2 ) by the transfer part 300 .

[0093] Further references Figure 8 , the stage 100 may have different moving speeds according to the areas irradiated by the first laser beam LB1 and the second laser beam LB2. For example, the moving speed of the stage 100 when the first laser beam LB1 and the second laser beam LB2 irradiate the first area A1 and the third area A3 (i.e., the moving speed that varies between the first moving speed V1 and the second moving speed V2) may be different from the moving speed of the stage 100 when the first laser beam LB1 and the second laser beam LB2 irradiate the second area A2 (i.e., the second moving speed V2). In an embodiment, the moving speed of the stage 100 when the first laser beam LB1 and the second laser beam LB2 irradiate the first area A1 and the third area A3 (i.e., the moving speed that varies between the first moving speed V1 and the second moving speed V2) may be less than the moving speed of the stage 100 when the first laser beam LB1 and the second laser beam LB2 irradiate the second area A2.

[0094] For example, when the moving time of the stage 100 is between the first time T1 and the second time T2, the first laser beam LB1 and the second laser beam LB2 may irradiate the first area A1, and the stage 100 may have a first moving speed V1. Specifically, when the first laser beam LB1 and the second laser beam LB2 irradiate the first area A1, the moving speed of the stage 100 at a specific point may increase from the first moving speed V1 to the second moving speed V2.

[0095] For example, when the moving time of the stage 100 is between the second time T2 and the third time T3, the first laser beam LB1 and the second laser beam LB2 may irradiate the second area A2, and the stage 100 may have the second moving speed V2.

[0096] For example, when the moving time of the stage 100 is between the third time T3 and the fourth time T4, the first laser beam LB1 and the second laser beam LB2 may irradiate the third area A3, and the stage 100 may have the first moving speed V1. Specifically, when the first laser beam LB1 and the second laser beam LB2 irradiate the third area A3, the moving speed of the stage 100 at a specific point may be reduced from the second moving speed V2 to the first moving speed V1.

[0097] However, embodiments of the present invention are not necessarily limited thereto, and the stage 100 may have the same moving speed when irradiating the first laser beam LB1 and the second laser beam LB2.

[0098] When the moving speed of the stage 100 is relatively low, the number of overlaps between the first laser beam LB1 and the second laser beam LB2 may be high. On the other hand, when the moving speed of the stage 100 is relatively high, the number of overlaps between the first laser beam LB1 and the second laser beam LB2 may be small. Here, the number of overlaps of the first laser beam LB1 and the second laser beam LB2 may mean the number of times the first laser beam LB1 and the second laser beam LB2 overlap each other in a plan view when the first laser beam LB1 and the second laser beam LB2 are irradiated in a scanning direction in a specific area for a specific time in a scanning method.

[0099] Further references Fig. 9 , the first laser beam LB1 may be irradiated based on the first oscillation signal, and the second laser beam LB2 may be irradiated based on the second oscillation signal. That is, the time of receiving the first oscillation signal may be substantially the same as the time of irradiating the first laser beam LB1, and the time of receiving the second oscillation signal may be substantially the same as the time of irradiating the second laser beam LB2.

[0100] In the first area A1, the light source part 200 may sequentially irradiate the first laser beam LB1 and the second laser beam LB2 toward the second surface S2 of the carrier substrate CS at the first time interval TI1. That is, in the first area A1, the first laser beam LB1 and the second laser beam LB2 may be sequentially irradiated toward the second surface S2 of the carrier substrate CS in a scanning method, wherein a time delay of the second laser beam LB2 relative to the first laser beam LB1 corresponds to the first time interval TI1.

[0101] After irradiating the first laser beam LB1 and the second laser beam LB2 in the first area A1, the light source part 200 may sequentially irradiate the first laser beam LB1 and the second laser beam LB2 in the second area A2 toward the second surface S2 of the carrier substrate CS at a second time interval TI2 different from the first time interval TI1. That is, in the second area A2, the first laser beam LB1 and the second laser beam LB2 may be sequentially irradiated toward the second surface S2 of the carrier substrate CS in a scanning method, wherein a time delay of the second laser beam LB2 relative to the first laser beam LB1 corresponds to the second time interval TI2.

[0102] After irradiating the first laser beam LB1 and the second laser beam LB2 in the second area A2, the light source part 200 may sequentially irradiate the first laser beam LB1 and the second laser beam LB2 toward the second surface S2 of the carrier substrate CS at the first time interval TI1 in the third area A3. That is, in the third area A3, the first laser beam LB1 and the second laser beam LB2 may be sequentially irradiated toward the second surface S2 of the carrier substrate CS in a scanning method.

[0103] In an embodiment, the first time interval TI1 may be smaller than the second time interval TI2. For example, the first time interval TI1 may be about 0.3 microseconds (μs), and the second time interval TI2 may be about 1666.7 microseconds (μs). However, embodiments of the present disclosure are not necessarily limited thereto.

[0104] Further references Fig.10 In an embodiment, the energy intensity of the first laser beam LB1 may be substantially the same as the energy intensity of the second laser beam LB2. That is, the maximum energy intensity of the first laser beam LB1 and the maximum energy intensity of the second laser beam LB2 may be substantially the same.

[0105] For example, the energy intensity of the first laser beam LB1 in the first area A1 and the third area A3 and the energy intensity of the first laser beam LB1 in the second area A2 may be substantially the same. The energy intensity of the second laser beam LB2 in the first area A1 and the third area A3 and the energy intensity of the second laser beam LB2 in the second area A2 may be substantially the same. However, embodiments of the present disclosure are not necessarily limited thereto.

[0106] Reference again Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 , Fig. 9 and Fig.10 In an embodiment of the present disclosure, the first laser beam LB1 and the second laser beam LB2 may be sequentially irradiated toward the second surface S2 of the carrier substrate CS at the first time interval TI1 in the first area A1 and the third area A3 overlapping or adjacent to the edge portion EP of the flexible substrate FS in a plan view, and the first laser beam LB1 and the second laser beam LB2 may be sequentially irradiated toward the second area A2 of the carrier substrate CS at the second time interval TI2 different from the first time interval TI1 in the second area A2 where the display element layer DL is formed. The first time interval TI1 may be smaller than the second time interval TI2. Therefore, the carrier substrate CS may be easily ablated from the flexible substrate FS. In addition, foreign matter due to the organic insulating layer may not be generated in the area overlapping or adjacent to the edge portion EP of the flexible substrate FS in a plan view.

[0107] Hereinafter, the effects of the present disclosure according to comparative examples and embodiments will be described.

[0108] Referring to Table 1 below, in the comparative example, the first laser beam and the second laser beam are sequentially irradiated to the interface between the carrier substrate CS and the flexible substrate FS at a first time interval of about 1666.7 μs in the first area A1 and the third area A3, and the first laser beam and the second laser beam are sequentially irradiated to the interface between the carrier substrate CS and the flexible substrate FS at a second time interval of about 1666.7 μs in the second area A2. The flexible substrate FS is formed using polyimide, and the carrier substrate CS is formed using glass. Each of the first laser beam and the second laser beam is a XeCl excimer laser emitting ultraviolet light of about 308 nm.

[0109] In Embodiment 1, the first laser beam LB1 and the second laser beam LB2 are sequentially irradiated to the interface between the carrier substrate CS and the flexible substrate FS at a first time interval TI1 of about 0.3 μs in the first area A1 and the third area A3, and the first laser beam LB1 and the second laser beam LB2 are sequentially irradiated to the interface between the carrier substrate CS and the flexible substrate FS at a second time interval TI2 of about 1666.7 μs in the second area A2. The flexible substrate FS is formed using polyimide, and the carrier substrate CS is formed using glass.

[0110] In Embodiment 2, the first laser beam LB1 and the second laser beam LB2 are sequentially irradiated to the interface between the carrier substrate CS and the flexible substrate FS at a first time interval TI1 of about 0.5 μs in the first area A1 and the third area A3, and the first laser beam LB1 and the second laser beam LB2 are sequentially irradiated to the interface between the carrier substrate CS and the flexible substrate FS at a second time interval TI2 of about 1666.7 μs in the second area A2. The flexible substrate FS is formed using polyimide, and the carrier substrate CS is formed using glass.

[0111] In Embodiment 3, the first laser beam LB1 and the second laser beam LB2 are sequentially irradiated to the interface between the carrier substrate CS and the flexible substrate FS at a first time interval TI1 of about 0.7 μs in the first area A1 and the third area A3, and the first laser beam LB1 and the second laser beam LB2 are sequentially irradiated to the interface between the carrier substrate CS and the flexible substrate FS at a second time interval TI2 of about 1666.7 μs in the second area A2. The flexible substrate FS is formed using polyimide, and the carrier substrate CS is formed using glass.

[0112] In Example 1, Example 2, and Example 3, each of the first laser beam LB1 and the second laser beam LB2 is a XeCl excimer laser emitting ultraviolet light of about 308 nm.

[0113]

[0114]

[0115] As a result, referring to Table 1, it can be confirmed that the instantaneous repetition rate of the first laser beam LB1 and the second laser beam LB2 in the first area A1 and the third area A3 according to Examples 1, 2, and 3 is relatively greater than the instantaneous repetition rate of the first laser beam LB1 and the second laser beam LB2 in the first area A1 and the third area A3 according to the comparative example. Here, the instantaneous repetition rate means a repetition rate that changes instantaneously when adjusting the interval between the time when the first laser beam LB1 is irradiated and the time when the second laser beam LB2 is irradiated.

[0116] When the repetition rate of the laser beam is large, the desorption threshold energy of the laser beam decreases, and when the repetition rate of the laser beam is small, the desorption threshold energy of the laser beam increases. When the desorption threshold energy of the laser beam is low, the carrier substrate can be easily ablated. On the other hand, when the desorption threshold energy of the laser beam is high, ablation of the carrier substrate may not be easy.

[0117] Furthermore, according to Example 1, Example 2, and Example 3, it was confirmed that after irradiating the first laser beam LB1 and the second laser beam LB2 to the interface between the carrier substrate CS and the flexible substrate FS, foreign matter did not appear due to the organic insulating layer in the region overlapping or adjacent to the edge of the flexible substrate FS in a plan view. On the other hand, according to the comparative example, it was confirmed that after irradiating the first laser beam and the second laser beam to the interface between the carrier substrate CS and the flexible substrate FS, foreign matter appeared due to the organic insulating layer in the region overlapping or adjacent to the edge of the flexible substrate FS in a plan view.

[0118] when Figure 5 When the via insulating layer VIA includes a first organic insulating layer and a second organic insulating layer sequentially arranged, the organic insulating layer may include the same material as the second organic insulating layer and may be formed by the same process as the second organic insulating layer.

[0119] Furthermore, according to Example 1, Example 2, and Example 3, it was confirmed that when the first laser beam LB1 and the second laser beam LB2 were irradiated to the interface between the carrier substrate CS and the flexible substrate FS, the transmittance of the carrier substrate CS satisfied the above Table 1, and the carrier substrate CS was easily ablated from the flexible substrate FS. On the other hand, according to the comparative example, it was confirmed that when the first laser beam and the second laser beam were irradiated to the interface between the carrier substrate CS and the flexible substrate FS, the transmittance of the carrier substrate CS satisfied the above Table 1, and unnatural ablation of the carrier substrate CS occurred in some areas.

[0120] The present disclosure can be applied to the process of manufacturing various display devices. For example, the present disclosure can be applied to various display devices, such as display devices for vehicles, ships and aircraft, portable communication devices, display devices for display or information transmission, medical display devices, etc.

[0121] The above is an explanation of the embodiments and should not be interpreted as limiting them. Although multiple embodiments have been described, it will be readily understood by those skilled in the art that many modifications may be made in the embodiments without substantially departing from the novel teachings and advantages of the present invention. Therefore, all such modifications are intended to be included within the scope of the present invention as defined in the claims. Therefore, it will be understood that the above is an explanation of various embodiments and should not be interpreted as being limited to the specific embodiments disclosed, and modifications to the disclosed embodiments and other embodiments are intended to be included within the scope of the appended claims.

Claims

1. A method for manufacturing a display device, the method comprising: forming a flexible substrate on a first side of a carrier substrate; forming a display element layer on the flexible substrate; sequentially irradiating a first laser beam and a second laser beam at a first time interval in a first region of the carrier substrate that overlaps or is adjacent to an edge portion of the flexible substrate in a plan view toward a second side of the carrier substrate opposite to the first side; as well as In a second region of the carrier substrate where the display element layer is formed, the first laser beam and the second laser beam are sequentially irradiated at a second time interval different from the first time interval.

2. The method according to claim 1, wherein: The first time interval is smaller than the second time interval.

3. The method according to claim 1, wherein: The energy intensity of the first laser beam is the same as the energy intensity of the second laser beam.

4. The method according to claim 1, wherein: Each of the first laser beam and the second laser beam is an excimer laser.

5. The method according to claim 1, further comprising: After forming the display element layer, the flexible substrate on which the display element layer is formed and the carrier substrate are placed on a stage, Wherein, while irradiating the first laser beam and the second laser beam, the stage can be moved in one direction together with the carrier substrate, the flexible substrate, and the display element layer.

6. The method according to claim 5, wherein: A moving speed of the stage when the first laser beam and the second laser beam irradiate the first region is different from a moving speed of the stage when the first laser beam and the second laser beam irradiate the second region.

7. The method according to claim 5, wherein: A moving speed of the stage when the first laser beam and the second laser beam irradiate the first region is lower than a moving speed of the stage when the first laser beam and the second laser beam irradiate the second region.

8. The method according to claim 1, wherein: The flexible substrate includes a first polyimide layer and a second polyimide layer formed on the first polyimide layer.

9. The method according to claim 1, wherein: When the first laser beam and the second laser beam are sequentially irradiated at the first time interval and the first laser beam and the second laser beam are sequentially irradiated at the second time interval, The first laser beam and the second laser beam irradiate the carrier substrate using a scanning method.

10. The method according to claim 9, wherein: When the first laser beam and the second laser beam are sequentially irradiated at the first time interval and the first laser beam and the second laser beam are sequentially irradiated at the second time interval, The first laser beam and the second laser beam irradiate the carrier substrate in a direction parallel to a long side of the carrier substrate using the scanning method.

11. The method according to claim 1, wherein: Each of the first laser beam and the second laser beam has a shape of a line beam in a plan view.

12. The method according to claim 1, wherein: After irradiating the first laser beam and the second laser beam toward the second side of the carrier substrate, the carrier substrate is ablated from the flexible substrate.

13. The method according to claim 1, wherein: The carrier substrate comprises glass.

14. Laser ablation device, comprising: a stage on which a carrier substrate, a flexible substrate disposed on a first side of the carrier substrate, and a display element layer disposed on the flexible substrate are disposed; as well as a light source section configured to sequentially irradiate a first laser beam and a second laser beam at a first time interval in a first region of the carrier substrate overlapping or adjacent to an edge portion of the flexible substrate in a plan view toward a second side of the carrier substrate opposite to the first side, and sequentially irradiate the first laser beam and the second laser beam at a second time interval different from the first time interval in a second region of the carrier substrate where the display element layer is provided.

15. The laser ablation device according to claim 14, wherein: The first time interval is smaller than the second time interval.

16. The laser ablation device according to claim 14, wherein: The energy intensity of the first laser beam is the same as the energy intensity of the second laser beam.

17. The laser ablation device according to claim 14, wherein: Each of the first laser beam and the second laser beam is an excimer laser.

18. The laser ablation device according to claim 14, further comprising: A transfer section is configured to move the stage together with the carrier substrate, the flexible substrate, and the display element layer in one direction while irradiating the first laser beam and the second laser beam.

19. The laser ablation device according to claim 18, wherein: A moving speed of the stage when the first laser beam and the second laser beam irradiate the first region is different from a moving speed of the stage when the first laser beam and the second laser beam irradiate the second region.

20. The laser ablation device according to claim 14, wherein: The flexible substrate includes a first polyimide layer and a second polyimide layer disposed on the first polyimide layer.

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