Tuned spectral detection chip and applications thereof

Abstract

The application discloses a tuning spectral detection chip and application thereof. The chip comprises a carrier and a plurality of spectral detection units arranged at intervals on the surface of the carrier; the carrier can rotate around a rotation axis to change the incident angle of incident light, and the polarization direction of the incident light is perpendicular to the rotation axis; each spectral detection unit comprises a one-dimensional grating structure and a detector arranged in sequence along the light transmission direction, 一 The plane where the one-dimensional grating structure is located is parallel to the rotation axis, and the wavelength ranges sampled by the plurality of spectral detection units are different from each other when the incident angle is within a set range. The application can realize an integrated spectral detection chip with an ultra-large wavelength range under limited tuning efficiency by cascading a plurality of spectral detection units on a single chip, and by setting one of the spectral detection units as a denoising unit and isolating the resonance wavelength of the denoising unit from the working wavelengths of other spectral detection units, the denoising unit can be used for more effective denoising signal processing, and high-precision anti-interference spectral detection is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to a spectrum detection chip, in particular to a low-noise and wide wavelength scanning range tuning spectrum detection chip and its application in spectrum analysis, and belongs to the technical field of optoelectronic devices. BACKGROUND

[0002] Spectrum analysis technology is one of the core technologies in the field of substance detection. With the rapid increase of on-site rapid detection and various light load platform spectrum detection demands, miniature spectrometers and even chip spectrometers have attracted widespread attention by integrating optical dispersion functions on chips to obtain integrated spectrum detection functions. Among them, the snapshot spectrum detection chip obtains spectrum detection by simultaneously sampling spectrum information through a series of spectrum sampling channels integrated on the chip, while the scanning spectrum detection chip generally based on a single sampling channel, through multiple wavelength tuning sampling, the spectrum information is sampled in turn. The scanning spectrum detection chip has lower cost and is suitable for cost-sensitive large-scale application scenarios. However, the scanning spectrum detection chip is usually limited by the tuning mechanism and faces the problem of narrow wavelength range, and due to the dynamic tuning working mode, the noise interference is more significant, which limits the applicability of related technologies. SUMMARY

[0003] The main purpose of the present application is to provide a tuning spectrum detection chip and its application to overcome the shortcomings of the prior art,

[0004] In order to achieve the above-mentioned purpose of the application, the technical scheme adopted by the present application includes:

[0005] The first aspect of the present application provides a tuning spectrum detection chip, which comprises:

[0006] A carrier capable of rotating relative to the direction of incident light around a rotation axis to change the incident angle of the incident light, the incident light being linearly polarized light, and the polarization direction being perpendicular to the rotation axis;

[0007] A plurality of spectrum detection units, the spectrum detection unit comprising a detector and a one-dimensional grating structure arranged on the detector, the one-dimensional grating structure and the detector being arranged in sequence along the transmission direction of the incident light in the chip, the plane of the one-dimensional grating structure being parallel to the rotation axis, and a plurality of the spectrum detection units being arranged on the surface of the carrier, when the incident angle is within a set range, the wavelength ranges sampled by a plurality of the spectrum detection units are different from each other.

[0008] Further, when the carrier rotates relative to the direction of incident light, angle scanning can be realized.

[0009] In one embodiment, the sampling wavelength ranges of the plurality of spectral detection units sequentially intersect two by two when the incident angle is within a set range.

[0010] Further, the lower limit value and the upper limit value of the sampling wavelength range of the plurality of spectral detection units are sequentially increased, i.e., the detection ranges of the plurality of spectral detection units are cascaded. For example, assuming that the integrated chip contains n spectral detection units (n≥2), the sampling wavelength range of the (n-1)th spectral detection unit is [λ min (n-1), λ max (n-1)], and the sampling wavelength range of the nth spectral detection unit is [λ min n, λ max n], then λ min (n-1)<λ min n, λ min (n-1)<λ max (n-1)<λ max n, but λ mmx (n-1) can be less than, equal to, or greater than λ min n.

[0011] More preferably, if λ max (n-1) = x and λ min n = y, then y≤x≤(y+z), and z≤10 nm.

[0012] In one embodiment, the spectral detection unit comprises a detector and a one-dimensional grating structure disposed on the detector, the one-dimensional grating structure and the detector are sequentially disposed along the transmission direction of the incident light in the chip; and when the incident angle is within a set range, the resonance wavelength of the one-dimensional grating structure in one spectral detection unit is different from the resonance wavelength of the one-dimensional grating structure in other spectral detection units.

[0013] Further, the resonance wavelength of each spectral detection unit is the resonance wavelength of the one-dimensional grating structure contained therein.

[0014] In one embodiment, the materials and structures of the detectors contained in the plurality of spectral detection units are the same. Further, in some cases, the resonance wavelength of one spectral detection unit can also be set to be outside the sampling wavelength range of other spectral detection units.

[0015] In one embodiment, the detector comprises a photodetector or a photothermal electric detector. In some cases, the detector can also be other detectors capable of photoelectric conversion.

[0016] Further, the detector can be directly formed using substrate preparation, for example, a Si substrate material can be used as the photoelectric response material of the detector, and a metal-Si Schottky detector can be directly formed by processing the Si substrate material using a silicon process. Alternatively, a photoelectric response material can be introduced on the surface of the substrate by transfer, bonding or epitaxial growth, and then a detector (such as graphene, Ge, etc.) can be prepared on the substrate using a semiconductor device process, which can be part of the active region of the detector or can only be used as a substrate. Alternatively, the substrate can also be used as the carrier mechanism, and a detector (such as InGaAs, Si, HgTe, etc.) that has been independently prepared can be mounted on the substrate by patching or other means, wherein the substrate and the detector are independent of each other and can be connected to each other by conductive lines or the like.

[0017] In one embodiment, the one-dimensional grating structure includes, but is not limited to, one of a one-dimensional dielectric grating and a one-dimensional metal grating. For example, the material of the one-dimensional grating structure includes a metal such as gold, platinum, silver, copper, aluminum or titanium, an inorganic non-metallic material such as graphene, titanium nitride, zirconium nitride, indium tin oxide, zinc oxide, silicon dioxide, silicon nitride, aluminum oxide, hafnium oxide, magnesium fluoride or polymethyl methacrylate, or an organic material.

[0018] Further, the one-dimensional grating structure transmits or absorbs light of different wavelengths at different incident angles.

[0019] Further, the one-dimensional grating structure can be part of the corresponding detector or can be integrated above the corresponding detector. In some cases, the detector can be integrally arranged with the one-dimensional grating structure.

[0020] In the present application, the surface of the carrier is preferably planar. Further, the distance between two adjacent spectral detection units should in principle be as close as possible without touching, in order to minimize the influence of the incident light distribution. For example, the distance between two adjacent spectral detection units can be set to 5 μm-2 mm, preferably below 200 μm, and more preferably below 50 μm.

[0021] In one embodiment, the detection chip includes a substrate having a fixed part and a rotatable part, the rotatable part being the carrier and being rotatably mounted on the fixed part by a rotating shaft. For example, the fixed part has a frame structure, and the rotatable part is rotatably mounted in the frame structure by a rotating shaft.

[0022] Further, the material of the substrate can be selected from silicon or silicon-on-insulator (SOI), and the like, without being limited thereto. For example, the substrate can be an axis-rotating device prepared on silicon or SOI based on MEMS technology or other silicon processes, such as a silicon micro-mirror.

[0023] In one embodiment, the spectral detection unit has a first electrode and a second electrode, the first electrode and the second electrode are electrically connected with a first contact electrode and a second contact electrode through a first electrode wire and a second electrode wire respectively, the first electrode wire and the second electrode wire extend from the rotatable part to the fixed part along the rotation shaft, and the first contact electrode and the second contact electrode are arranged on the fixed part.

[0024] Further, the first electrodes of a plurality of the spectral detection units can be connected with each other to form a common electrode, and the common electrode is electrically connected with a first contact electrode through a first electrode wire. With this design, the internal structure of the integrated chip can be more simple, and the manufacturing difficulty is lower.

[0025] The second aspect of the present application provides a spectral detection method, which is based on the tuning spectral detection chip and includes the following steps:

[0026] Making the light to be detected incident on the tuning spectral detection chip;

[0027] Rotating the carrier relative to the incident light to change the incident angle;

[0028] Recording and analyzing the corresponding detection signals output by the tuning spectral detection chip at each rotation angle of the carrier, so as to realize the spectral detection of the light to be detected.

[0029] In one embodiment, the method specifically includes: at each rotation angle, simultaneously sampling spectral information of different wavelengths by using a plurality of spectral detection units in the tuning spectral detection chip, defining the spectral detection units that produce resonance absorption to the light to be detected as working units, defining the spectral detection units that do not produce resonance absorption to the light to be detected as noise reduction units, subtracting the current signals output by the working units from the current signals output by the noise reduction units to obtain noise reduction current signals, and then combining and analyzing all the noise reduction current signals obtained at all rotation angles to obtain the complete spectral information of the light to be detected.

[0030] Compared with the prior art, the present application can effectively expand the working wavelength range by cascading a plurality of tuning spectral detection units on a single chip, obtain an integrated spectral detection chip with an ultra-wide wavelength range under limited tuning efficiency, and isolate the resonance wavelength range of one of the spectral detection units from the working wavelength ranges of the other spectral detection units to use it for more effective noise reduction signal processing and realize high-precision anti-interference spectral detection. BRIEF DESCRIPTION OF DRAWINGS

[0031] Figure 1is a structural schematic diagram of a tuning spectral detection chip in an exemplary embodiment of the present application;

[0032] Figure 2 is a top view of a plurality of one-dimensional grating structures in an exemplary embodiment of the present application;

[0033] Figure 3 is a graph of the correspondence between the resonance wavelength and the incident light angle of a plurality of one-dimensional grating structures in an exemplary embodiment of the present application;

[0034] Figure 4 is a structural schematic diagram of an integrated structure of a one-dimensional grating structure and a detector in an exemplary embodiment of the present application;

[0035] Figure 5 is a structural schematic diagram of an integrated structure of another one-dimensional grating structure and a detector in an exemplary embodiment of the present application;

[0036] Figure 6 is a structural schematic diagram of an integrated structure of yet another one-dimensional grating structure and a detector in an exemplary embodiment of the present application;

[0037] Figure 7 is an absorption (transmission) spectrum graph corresponding to a plurality of one-dimensional grating structures when the incident angle is θ1 in an exemplary embodiment of the present application;

[0038] Figure 8 is Figure 1 is a schematic diagram of a segmented tuning of the tuning spectral detection chip shown in

[0039] Figure 9 is a detection signal graph extracted by Q1 and Q2 when the incident angle varies within [θ1, θ2] in Example 1;

[0040] Figure 10 is a low-noise detection signal graph obtained by subtracting the signal of Q1 from the signal of Q2 in Example 1;

[0041] Figure 11 is a detection signal graph extracted by Q1 and Q3 when the incident angle varies within [θ1, θ2] in Example 1;

[0042] Figure 12 is a low-noise detection signal graph obtained by subtracting the signal of Q1 from the signal of Q3 in Example 1. DETAILED DESCRIPTION

[0043] For the wavelength tuning technology integrated on chip, it is generally limited by the low tuning efficiency of electro-optical / thermal-optical / opto-mechanical-electrical, etc. in small space, and there are defects such as limited wavelength tuning range and poor applicability. In view of these deficiencies of the prior art, the present application is proposed by the present inventor after long-term research and a large number of practices, which is mainly to realize the tuning spectral detection chip with large working wavelength range by segment tuning through dynamically cascading multiple spectral detection units, and to realize the improvement of detection accuracy by signal denoising between spectral detection units.

[0044] Further, in the technical scheme of the present application, the resonance wavelengths of different one-dimensional grating structures under the same tuning driving signal are constructed, the multiple spectral detection units are complementary to each other in the wavelength dimension, so as to obtain an integrated spectral detection chip with super large wavelength range under limited tuning efficiency. Then, by integrating the denoising spectral detection unit (defined as the denoising unit) which is isolated from the working wavelength range of other spectral detection units (defined as the working unit), the denoising signal processing is more effective, and high-precision anti-interference spectral detection is realized.

[0045] The technical scheme, implementation process and principles of the present application will be further described as follows.

[0046] Please refer to Figures 1-2 In a typical embodiment of the present application, a tuning spectral detection chip mainly consists of a substrate 1 and multiple spectral detection units, each of which mainly consists of a detector and a one-dimensional grating structure.

[0047] For example, the detection chip contains four spectral detection units, which can be numbered as Q1, Q2, Q3, Q4 (hereinafter referred to as Q1, Q2, Q3, Q4). The four spectral detection units contain four detectors 21, 22, 23, 24. The four detectors 21, 22, 23, 24 are respectively integrated with one-dimensional grating structures 51, 52, 53, 54.

[0048] The resonance wavelength of each one-dimensional grating structure in the four one-dimensional grating structures is related to the incident angle of the incident light, for example, please refer to Figure 3 When the incident angle of the incident light is in the range of [θ1, θ2], the resonance wavelength range of the one-dimensional grating structure 51 is [λ11, λ12], the resonance wavelength range of the one-dimensional grating structure 52 is [λ21, λ22], the resonance wavelength range of the one-dimensional grating structure 53 is [λ31, λ32], and the resonance wavelength range of the one-dimensional grating structure 54 is [λ41, λ42].

[0049] For example, the one-dimensional grating structure 51 can be integrated on the corresponding detector 21, as shown in Figure 4As shown, the one-dimensional grating structure 51 can be formed by metal and / or dielectric material, and the transmitted light after the incident light passing through the one-dimensional grating structure 51 is received by the detector 21.

[0050] Alternatively, the one-dimensional grating structure 51 can also be a part of the corresponding detector 21, such as Figure 5 As shown, where 211 is a semiconductor structure and 212 is a metal structure, the metal-semiconductor contact can form a Schottky detector, and meanwhile the one-dimensional grating structure 51 has an angle-sensitive characteristic, so that only light of corresponding wavelength can be selectively absorbed by the one-dimensional grating structure 51 at each incident light angle, and then converted into current output by the Schottky detector.

[0051] For another example, the one-dimensional grating structure 51 can also be integrated with the corresponding detector 21 in a manner as shown in Figure 6 As shown, where 511 is a dielectric structure, which can be a dielectric material such as SiO2, SiN, etc., and 512 is a metal structure, and the detector 21 can be an InGaAs detector, etc. After the incident light passing through the one-dimensional grating structure 51, it is transmitted to the detector 21.

[0052] The corresponding absorption / transmission spectrum of the four one-dimensional grating structures 51, 52, 53, 54 at the incident angle of θ1is as shown in Figure 7

[0053] As a specific implementation of the typical embodiment, please refer to Figure 1 As shown, the substrate 1 can have a rotatable part 11 and a fixed part 12, the fixed part 12 can have a frame structure, and the rotatable part 11 can be rotatably arranged in the frame structure through a rotating shaft 13. The four detectors 21, 22, 23, 24 are arranged on the rotatable part 11, and each detector has at least two electrodes, which are also working electrodes of the corresponding spectral detection unit. Assuming that each detector has two electrodes of a first electrode and a second electrode, and the first working electrodes of the four detectors can be electrically connected to each other through a first electrode wiring 30 to form a common electrode, and electrically connected to a first contact electrode 40 through the electrode wiring 30. The second working electrodes of the four detectors can be electrically connected to second contact electrodes 41, 42, 43, 44 through second electrode wirings 31, 32, 33, 34, respectively. The first and second contact electrodes are arranged on the fixed part 12. The first and second electrode wirings are led out from the rotatable part 11 to the fixed part 12 through the rotating shaft 13.

[0054] Further, please refer to Figure 8 ​In the working of the detection chip, the rotatable part 11 rotates around the rotation shaft 13 under the driving signal and drives the plurality of spectral detection units to rotate. The angle range of the incident light 6 relative to the one-dimensional grating structure is the angle range of the rotation angle θ of the rotatable part 11. The output electrical signal of each detector at each rotation angle is recorded by the contact electrode. Each spectral detection unit works independently, and when the rotation angle of the rotatable part 11 is controlled within the range of θ1-θ2, the spectra within the ranges of [λ11, λ12], [λ21, λ22], [λ31, λ32], and [λ41, λ32] can be collected and analyzed from the four spectral detection units, respectively. More preferably, λ12=λ21, λ22=λ31, and λ32=λ41, so that the spectral information within the large wavelength range of [λ11, λ42] can be obtained by combining the data sampled by the plurality of spectral detection units, and the working wavelength range of the tuning spectral detection chip is expanded. Further, in order to improve the process tolerance, λ21<λ12<(λ21+10nm) (other similar) can be selected to ensure that each wavelength band has an overlap of within 10nm.

[0055] On the other hand, since the four spectral detection units are all prepared on the same rotatable part 11 and have the same device material structure, the difference between the different spectral detection units is only the one-dimensional grating structure, which makes the wavelength range of spectral sampling different, and the influence of system vibration, temperature change, light source change, dark current caused by the electrical structure of the detector, and the photoelectric current caused by the non-resonance absorption (transmission) light of the one-dimensional grating structure are all consistent, which are all noises that interfere with the detection accuracy. Therefore, the suppression of the foregoing noises can be achieved by signal difference between different spectral detection units. For example, the resonance wavelength of Q1 is set outside the response wavelength range of the detectors 21, 22, 23, and 24, so that when the rotation angle of the rotatable part 11 is within [θ1, θ2], the resonance wavelength of the spectral detection unit is within the [λ11, λ12] band, but cannot be converted into photoelectric current by the detector 21, and therefore the signal recorded on the detector 21 is all noise. Then when the detection signals (current signals) of the numbers Q2, Q3, and Q4 are extracted, the detection signal of Q1 at the same rotation angle can be subtracted to obtain a detection signal with low noise level, and finally a high-quality detection signal within the [λ21, λ42] band is obtained. The spectral detection units prepared by the same process can be very close in noise level, and therefore the noise reduction effect is much better than that of the simple reference detector (Ref) covered with a light-blocking layer. It should be noted that the reference detector is formed by covering a light-blocking layer on the same device as the spectral detection unit, and therefore the sampling under no light can be realized as noise.

[0056] In particular, in the working process of the detection chip, the multiple spectral detection units perform dynamic cascade detection. In each rotation angle, different spectral detection units simultaneously sample spectral information of different wavelengths, and denoising is performed in the above manner. Finally, all the denoised signals sampled at all angles are combined to form complete spectral information of the light to be detected.

[0057] The technical solutions of the present application are described in further detail below in combination with several embodiments.

[0058] The structure of the tuning spectral detection chip provided in this embodiment can be referred to as shown in Figure 1 which includes a MEMS silicon micro-mirror made based on an SOI substrate. The rotatable part 11 in the silicon micro-mirror serves as the carrier as described above, and has a size of about 3000x3000x500 μm. The rotation angle range is 0-10°, and the corresponding incident angle range of the incident light is [θ1, θ2], θ1 and θ2 are about 0° and 10°, respectively. Four detectors 21, 22, 23 and 24 having the same material and structure are arranged in an array on the carrier. The four detectors are all InGaAs detectors, and the detection wavelength range of each of the four detectors is 900-1700 nm. The spacing between the four InGaAs detectors is about 50 μm. Meanwhile, four one-dimensional grating structures 51, 52, 53 and 54 composed of one-dimensional metal gratings are arranged on the four InGaAs detectors, respectively, as shown in Figure 2 and Figure 4 so as to form four spectral detection units numbered Q1, Q2, Q3 and Q4. The period of the one-dimensional grating structure 51 is about 200 nm, the grating width is about 100 nm, the grating depth is about 60 nm, and the resonance wavelength is less than 500 nm, serving as a denoising unit. The period of the one-dimensional grating structure 52 is about 1040 nm, the grating width is about 520 nm, the grating depth is about 60 nm, and the resonance wavelength range is about 900-1180 nm. The period of the one-dimensional grating structure 53 is about 1300 nm, the grating width is about 650 nm, the grating depth is about 60 nm, and the resonance wavelength range is about 1170-1440 nm. The period of the one-dimensional grating structure 54 is about 1570 nm, the grating width is about 785 nm, the grating depth is about 60 nm, and the resonance wavelength range is about 1430-1700 nm. In combination of all the four spectral detection units, the wavelength range that can be scanned by the detection chip is about 900-1700 nm.

[0059] The working principle of the detection chip is as described above. When the light to be detected is incident on the detection chip, and the carrier is rotated to change the incident angle in [θ1, θ2], the spectral detection signals (mainly photocurrent signals) extracted based on Q1 and Q2 are as shown in Figure 9As shown, by subtracting the spectral detection signal of Ql from the spectral detection signal of Q2, a spectral detection signal with low noise level can be obtained, as shown in Figure 10 As shown, by subtracting the spectral detection signal of Ql from the spectral detection signal of Q3, a spectral detection signal with low noise level can be obtained, as shown in Figure 11 As shown, by subtracting the spectral detection signal of Ql from the spectral detection signal of Q3, a spectral detection signal with low noise level can be obtained, as shown in Figure 12

[0060] Embodiment 2 The structure of a tuning spectral detection chip provided in this embodiment is basically the same as that of Embodiment 1, with the difference being that the structure of the four spectral detection units is as shown in Figure 5 As shown, the structure of the four spectral detection units includes one-dimensional silicon material gratings 211, 221, 231, 241 formed on the front surface of a rotatable part 11 and gold films 212, 222, 232, 242 covering the gratings 211, 221, 231, 241, which form Schottky detectors through gold-silicon contact, i.e., spectral detection units Ql, Q2, Q3, Q4. The angle range of the chip rotation is 0-5°. Without considering the grating effect, the detection wavelength range of the gold-silicon Schottky detector is 500-1500 nm. Since the grating structure is included, the four detectors are angle-sensitive by themselves. The period of the grating 211 is about 200 nm, the grating width is about 100 nm, the grating depth is about 25 nm, the gold film 212 is about 50 nm, and the resonance wavelength is less than 500 nm, serving as a noise reduction unit. The period of the grating 221 is about 900 nm, the grating width is about 450 nm, the grating depth is about 25 nm, the gold film 222 is about 50 nm, and the resonance wavelength range is about 800-1010 nm. The period of the grating 231 is about 1100 nm, the grating width is about 550 nm, the grating depth is about 25 nm, the gold film 232 is about 50 nm, and the resonance wavelength range is about 1010-1210 nm. The period of the grating 241 is about 1300 nm, the grating width is about 650 nm, the grating depth is about 25 nm, the gold film 242 is about 50 nm, and the resonance wavelength range is about 1210-1410 nm. The gold film 212 in each detector also serves as its first working electrode, and a second working electrode of each detector can be formed by depositing metal materials such as Ti, Al, Au, etc. on the back surface of the rotatable part 11. The wavelength range that can be scanned by the detection chip is about 800-1400 nm.

[0061] Embodiment 3 The structure of a tuning spectral detection chip provided in this embodiment is basically the same as that of Embodiment 1, with the difference being that the structure of the four spectral detection units is as shown in Figure 6 ​As shown, each of them comprises a detector arranged on the rotatable part 11 of the silicon micro-mirror and a one-dimensional grating structure arranged on the detector. The rotatable angle range is 0-10°. The four detectors 21, 22, 23, 24 are all InGaAs detectors with a detection wavelength of 900-1700 nm. As shown, four one-dimensional grating structures 51, 52, 53, 54 are arranged on the four detectors respectively, which are composed of SiO2grating and Au film covering, thereby forming four spectral detection units numbered as Q1, Q2, Q3, Q4. Figure 2 and Figure 6 As shown, four one-dimensional grating structures 51, 52, 53, 54 are arranged on the four detectors respectively, which are composed of SiO2grating and Au film covering, thereby forming four spectral detection units numbered as Q1, Q2, Q3, Q4. The structures of SiO2grating in the four one-dimensional grating structures are all different. The period of the one-dimensional grating structure 51 is about 200 nm, the grating width is about 100 nm, the grating depth is about 60 nm, and the resonance wavelength is less than 500 nm. The period of the one-dimensional grating structure 52 is about 1040 nm, the grating width is about 520 nm, the grating depth is about 60 nm, and the resonance wavelength range is about 900-1180 nm. The period of the one-dimensional grating structure 53 is about 1300 nm, the grating width is about 650 nm, the grating depth is about 60 nm, and the resonance wavelength range is about 1170-1440 nm. The period of the one-dimensional grating structure 54 is about 1570 nm, the grating width is about 785 nm, the grating depth is about 60 nm, and the resonance wavelength range is about 1430-1700 nm. The thickness of the Au film 512 in the one-dimensional grating structures 51, 52, 53, 54 is all 30 nm. The scannable wavelength range is about 900-1700 nm.

[0062] It should be understood that the above embodiments are only for illustrating the technical concept and characteristics of the present application, and the purpose is to enable those skilled in the art to understand the content of the present application and implement it, and cannot limit the protection scope of the present application. Any equivalent changes or modifications made according to the spirit and essence of the present application should be covered within the protection scope of the present application.

Claims

1. A tunable spectral detection chip, characterized by, The chip comprises: a carrier capable of rotating relative to the direction of incident light around a rotation axis to change the incident angle of the incident light, the incident light being linearly polarized light, and the polarization direction being perpendicular to the rotation axis; n spectral detection units, n≥2, the spectral detection units comprising a detector and a one-dimensional grating structure arranged on the detector, the one-dimensional grating structure and the detector being arranged in sequence along the transmission direction of the incident light in the chip, the plane of the one-dimensional grating structure being parallel to the rotation axis, the n spectral detection units being arranged on the surface of the carrier at intervals, and the detectors in the n spectral detection units being of the same material and structure; When the incident angle is within a set range, the sampling wavelength ranges of the n spectral detection units are all different and intersect each other sequentially, wherein the sampling wavelength range of the (n-1)th spectral detection unit is [λ min (n-1), λ max (n-1)], the sampling wavelength range of the nth spectral detection unit is [λ min n、λ max n],λ min (n-1)<λ min n, λ min (n-1)<λ max (n-1)<λ max n, λ max (n-1)=x,λ min n=y, y≤x≤(y+z), z≤10nm; and when the chip is used to detect the light to be detected, the light to be detected is incident on the chip, the carrier is rotated relative to the incident light to change the incident angle, the corresponding detection signals output by the chip at each rotation angle are recorded and analyzed, at each rotation angle, the n spectral detection units in the chip simultaneously sample spectral information of different wavelengths, the spectral detection unit that produces resonance absorption to the light to be detected is defined as a working unit, the spectral detection unit that does not produce resonance absorption to the light to be detected is defined as a denoising unit, the current signal output by the working unit is subtracted from the current signal output by the denoising unit to obtain a denoised current signal, and then all the denoised current signals obtained at all rotation angles are combined and analyzed to obtain the complete spectral information of the light to be detected, thereby realizing spectral detection of the light to be detected.

2. The tunable spectral detection chip of claim 1, wherein: When the incident angle is within a set range, the resonance wavelength of the one-dimensional grating structure in one spectral detection unit is different from the resonance wavelength of the one-dimensional grating structure in another spectral detection unit.

3. The tunable spectral detection chip of claim 1, wherein: The detector and the one-dimensional grating structure are integrally arranged.

4. The tunable spectral detection chip of claim 1, wherein: The detector comprises a photodetector or a photothermal electric detector.

5. The tunable spectral detection chip of claim 1, wherein: The surface of the carrier is a plane.

6. The tunable spectral detection chip of claim 1, wherein: The distance between two adjacent spectral detection units is 5 μm-2 mm.

7. The tunable spectral detection chip of claim 1, wherein: The detection chip comprises a substrate, the substrate having a fixed part and a rotatable part, the rotatable part being the carrier and being rotatably mounted on the fixed part through a rotation axis.

8. The tunable spectral detection chip of claim 7, wherein: The spectral detection unit has a first electrode and a second electrode, the first electrode and the second electrode being electrically connected to a first contact electrode and a second contact electrode through a first electrode wiring and a second electrode wiring, the first electrode wiring and the second electrode wiring extending from the rotatable part to the fixed part along the rotation axis, and the first contact electrode and the second contact electrode being arranged on the fixed part.

9. The tunable spectral detection chip of claim 8, wherein: The first electrodes of the n spectral detection units are connected to each other to form a common electrode, the common electrode being electrically connected to a first contact electrode through a first electrode wiring.

10. A method of spectral detection, characterized by, The method is based on the tuned spectral detection chip according to any one of claims 1-9, and the method comprises: making the light to be detected incident on the tuned spectral detection chip; rotating the carrier relative to the incident light to change the incident angle; The corresponding detection signals outputted by the tuning spectral detection chip of the carrier at each rotation angle are recorded and analyzed, and at each rotation angle, n spectral detection units in the chip simultaneously sample spectral information of different wavelengths, a spectral detection unit that produces resonance absorption to the to-be-detected light is defined as a working unit, a spectral detection unit that does not produce resonance absorption to the to-be-detected light is defined as a denoising unit, a current signal outputted by the working unit is subtracted from a current signal outputted by the denoising unit to obtain a denoised current signal, and then all denoised current signals obtained at all rotation angles are combined and analyzed to obtain complete spectral information of the to-be-detected light, thereby realizing spectral detection of the to-be-detected light.

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