Probe main body, electric field probe and detection system

Abstract

The invention provides a probe main body, an electric field probe and a detection system. The probe main body comprises a transmission part, a detection line, and a detection end and a connection end which are respectively arranged at two ends of the transmission part, and the detection line is arranged in the transmission part. The detection end is used for detecting an electric field of a to-be-detected object, and the connection end is used for connecting detection equipment. The end face of the detection end is provided with a first shielding layer, and the first shielding layer is provided with a detection through hole. The detection line extends from the connection end to the detection through hole along the transmission part, and the detection line and the first shielding layer are arranged in an insulated manner. The detection line is used for detecting an electric field of an object to be detected at the detection end through the detection through hole and transmitting a detection signal obtained through detection to the connection end through the transmission part. The electric field probe can accurately detect the electric field in the vertical direction, and the resolution ratio of electric field detection is high.

Description

Technical Field

[0001] The present application relates to the technical field of electric field detection, and in particular to a probe body, an electric field probe and a detection system. Background Art

[0002] With the continuous development of power electronics technology, bus speeds are increasing, operating frequencies are increasing, level switching is accelerating, and wiring density is increasing. These factors will cause electronic devices (such as chips) to generate some unwanted electromagnetic radiation. Electromagnetic radiation is picked up by cables, traces, or package pins, and coupled to other circuits or electronic systems, causing serious electromagnetic compatibility problems.

[0003] Electromagnetic field near-field test probes are key tools for electromagnetic compatibility testing. They can capture electric and magnetic field radiation, and can perform electromagnetic radiation analysis through detection equipment such as spectrum analyzers and oscilloscopes. However, in related technologies, electric field probes have low resolution and poor near-field test results. They can perform electric field detection on large areas above the board level, but cannot meet the requirements for electric field detection at the chip level or package level. Summary of the invention

[0004] The embodiments of the present application provide a probe body, an electric field probe, and a detection system to improve the resolution of electric field detection to meet the requirements of electric field detection at the chip level or the packaging level.

[0005] In the first aspect, an embodiment of the present application provides an electric field probe. The electric field probe in the embodiment of the present application may include: a probe body, a connector and a fixing member, the probe body having a detection end and a connection end, the detection end is used to detect the electric field of the object to be measured, and the connection end is used to connect the detection device. The probe body is connected to the connector through the connection end, and the probe body is used to be electrically connected to the detection device through the connector. The fixing member is used to fix the connection between the probe body and the connector. Specifically, the fixing member may include a first fixing portion and a second fixing portion, the second fixing portion is used to be fixedly connected to the mechanical arm, and the first fixing portion is used to fix the connection between the second fixing portion, the probe body and the connector.

[0006] In a specific implementation, the probe body can be controlled to move precisely through a robotic arm to place the probe body on the object to be measured. The probe body can detect the electric field of the object to be measured at the detection end, and transmit the detected detection signal to the detection device through the connector. The detection device can determine the electric field of the object to be measured based on the detection signal detected by the detection body, thereby realizing electric field detection of the object to be measured.

[0007] The probe body in the embodiment of the present application may include: a transmission part, a detection line, and a detection end and a connection end respectively arranged at both ends of the transmission part. The detection line is arranged inside the transmission part. The end face of the detection end is provided with a first shielding layer, and the first shielding layer is provided with a detection through hole. The detection line extends from the connection end along the transmission part to the detection through hole, and the detection line is insulated from the first shielding layer, and the detection line can leak out through the detection through hole in the first shielding layer. The first shielding layer can play a role in shielding the electric field. In a specific implementation, the first shielding layer can be grounded. The detection line is used to detect the electric field of the object to be measured at the detection end through the detection through hole, and transmit the detection signal obtained through the transmission part to the connection end.

[0008] During the electric field detection process, the detection end of the probe body can be made perpendicular to the surface of the object to be detected, and the first shielding layer can shield the electric field in directions other than the vertical direction. Only the electric field in the vertical direction can be detected by the detection line, wherein the vertical direction refers to the direction perpendicular to the surface of the object to be detected. The detection line leaking from the detection through hole can form an electric potential difference with the first shielding layer and couple with the electric field in the vertical direction, so that the component of the electric field in the vertical direction can be detected, and the detection signal obtained by the detection can be approximately proportional to the component of the electric field in the vertical direction.

[0009] In the electric field probe provided in the embodiment of the present application, by setting a first shielding layer at the end of the detection end of the probe body, and the detection line leaking through the detection through hole in the first shielding layer, the electric field in the vertical direction can be accurately detected, the interference of the electric field in other directions can be eliminated, and the resolution of the electric field detection can be improved. In addition, the electric field probe in the embodiment of the present application can be manufactured using a chip carrier board process, and the chip carrier board process can produce a routing line with a smaller line width, so that a thinner detection line can be produced, for example, a detection line with a line width of about 15μm can be produced, and the overall thickness of the probe body can be less than 0.7mm, for example, the overall thickness of the probe body can be in the range of 0.4mm to 0.7mm, thereby further improving the resolution of the electric field probe, so that the resolution reaches less than 0.1mm.

[0010] In a possible implementation, the end of the detection line can be flush with the outer surface of the first shielding layer, and an insulating dielectric material can be filled between the detection line and the inner wall of the detection through hole to ensure that the detection line and the first shielding layer are insulated. The detection line and the first shielding layer can be made of metal materials such as copper, silver, and iron. Of course, the detection line and the first shielding layer can also be made of other conductive materials, which is not limited here. The thickness of the detection line can be in the range of 15μm to 50μm.

[0011] In the embodiment of the present application, the probe body may be in the shape of a broken line, a straight line or a curve. In specific implementation, the shape of the probe body may be set according to actual needs, which is not limited here.

[0012] In an embodiment of the present application, the probe body may further include: a second shielding layer and a third shielding layer, the second shielding layer and the third shielding layer respectively cover two opposite outer sides of the transmission part, and extend from the detection end along the transmission part to the connection end. In other words, the entire outer side of the probe body is completely wrapped by the second shielding layer and the third shielding layer, and the second shielding layer and the third shielding layer can play a shielding role, thereby preventing the detection signal transmitted in the detection line from being interfered by external signals, and further improving the resolution of electric field detection. In a specific implementation, the second shielding layer and the third shielding layer can be grounded. In addition, the use of a shielding layer to wrap the outer side and end face of the probe body can also prevent the detection signal transmitted in the detection line from affecting the electric field of the object to be measured.

[0013] In a possible implementation, the second shielding layer and the third shielding layer may be made of metal materials such as copper, silver, and iron. Of course, the second shielding layer and the third shielding layer may also be made of other conductive materials, which is not limited here.

[0014] In the embodiment of the present application, the transmission part of the probe body may also include: a support layer, a first shielding part and a first conductive part. The support layer can be used to support the detection line and the first conductive part. The support layer can be made of an insulating dielectric material. The thickness of the support layer can be between 90 μm and 110 μm. For example, the thickness of the support layer can be about 100 μm, and the support layer is hard, so that it can carry the detection line and other film layers mentioned later. The detection line and the first conductive part are located on the surface of one side of the support layer, and the first shielding part is located on the side of the detection line and the first conductive part away from the support layer. The first conductive part can be located in the same film layer as the detection line. In the embodiment of the present application, the film layer where the detection line and the first conductive part are located is referred to as the first conductive film layer. The first conductive part is electrically connected to the first shielding part, and the first conductive part is insulated from the detection line. The first shielding part can play a shielding role to prevent the detection signal transmitted in the detection line from being interfered by external signals, and can also prevent the detection signal transmitted in the detection line from affecting the electric field of the object to be measured. In specific implementation, the first shielding part can be grounded. In the direction perpendicular to the surface of the supporting layer, the first shielding portion can cover the detection line, thereby achieving a better shielding effect. In addition, the first conductive portion is set to be electrically connected to the first shielding portion to enhance the shielding effect. In a specific implementation, the first shielding portion can be made of metal materials such as copper, silver, and iron. Of course, the first shielding portion can also be made of other conductive materials, which is not limited here. The thickness of the first shielding portion can be in the range of 12μm to 35μm.

[0015] In a possible implementation, the transmission part of the probe body may also include: a first dielectric layer and at least one first conductive connection hole, the first dielectric layer is located between the first shielding part and the first conductive film layer, the first conductive connection hole penetrates the first dielectric layer and the first shielding part, and the first conductive part is electrically connected to the first shielding part through the first conductive connection hole. In the manufacturing process, a through hole may be first formed in the first dielectric layer and the first shielding part, and then a conductive film may be formed on the inner wall of the through hole using a conductive material such as metal, and then an insulating material or a conductive material may be filled in the through hole to form the first conductive connection hole. In a specific implementation, the first dielectric layer may be made of an insulating dielectric material, and the thickness of the first dielectric layer may be greater than or equal to 35 μm.

[0016] In a specific implementation, the first conductive part may include two conductive parts located on both sides of the detection line, so that the interference signal on the side of the detection line can be shielded. In the direction perpendicular to the surface of the supporting layer, the first shielding part can cover the detection line and the first conductive part. The coverage range of the first shielding part is large, which can achieve a better shielding effect. In addition, in the direction perpendicular to the surface of the supporting layer, the first dielectric layer can cover the detection line and the first conductive part, so as to achieve a better insulation and filling effect.

[0017] Further, the transmission part of the probe body in the implementation of the present application may also include: a second conductive part and a second shielding part. The second conductive part is located on the surface of the support layer away from the detection line, the second shielding part is located on the side of the second conductive part away from the support layer, and the second conductive part is electrically connected to the second shielding part. The second shielding part can play a shielding role to prevent the detection signal transmitted in the detection line from being interfered by external signals, and can also prevent the detection signal transmitted in the detection line from affecting the electric field of the object to be measured. In the specific implementation, the second shielding part can be grounded. In the direction perpendicular to the surface of the supporting layer, the second shielding part can cover most of the area of ​​the detection line, thereby achieving a better shielding effect. In addition, the second conductive part is set to be electrically connected to the second shielding part, which can enhance the shielding effect. In the specific implementation, the second shielding part and the second conductive part can be made of metal materials such as copper, silver, and iron. Of course, the second shielding part and the second conductive part can also be made of other conductive materials, which are not limited here. The thickness of the second shielding part can be in the range of 12μm to 35μm, and the thickness of the second conductive part can be in the range of 15μm to 50μm. In this way, shielding layers (or shielding parts) are arranged around the detection line, which can effectively prevent external signals from interfering with the detection signal, so that the electric field probe has a higher resolution.

[0018] In a possible implementation, the transmission part of the probe body may also include: a second dielectric layer and at least one second conductive connection hole, the second dielectric layer is located between the second conductive part and the second shielding part, the second conductive connection hole penetrates the second dielectric layer and the second shielding part, and the second conductive part is electrically connected to the second shielding part through the second conductive connection hole. In the manufacturing process, a through hole may be first formed in the second dielectric layer and the second shielding part, and then a conductive film may be formed on the inner wall of the through hole using a conductive material such as metal, and then an insulating material or a conductive material may be filled in the through hole to form a second conductive connection hole. In a specific implementation, the second dielectric layer may be made of an insulating dielectric material, and the thickness of the second dielectric layer may be greater than or equal to 35 μm.

[0019] In a specific implementation, in a direction perpendicular to the surface of the supporting layer, the pattern of the second conductive part surrounds the detection line, which can shield the interference signal above the detection line side, that is, the pattern of the second conductive part can be ring-shaped. In a direction perpendicular to the surface of the supporting layer, the second shielding part can cover most of the area of ​​the detection line and the second conductive part, which can achieve a good shielding effect. In addition, in a direction perpendicular to the surface of the supporting layer, the second dielectric layer can cover the second conductive part and the second shielding part, so as to achieve a good insulation and filling effect.

[0020] The probe body in the embodiment of the present application may also include: a third conductive connection hole, the third conductive connection hole passes through the first conductive part, the support layer and the second conductive part, and the first conductive part is electrically connected to the second conductive part through the third conductive connection hole. In other words, the first shielding part, the first conductive part, the second conductive part and the second shielding part with a shielding effect are electrically connected, thereby improving the shielding effect. In the manufacturing process, a through hole passing through the first conductive part, the support layer and the second conductive part can be first made, and then a conductive film is formed on the inner wall of the through hole using a conductive material such as metal, and then an insulating material or a conductive material is filled in the through hole to form a third conductive connection hole.

[0021] In some embodiments of the present application, the transmission part of the probe body has a plurality of first shielding holes, and the first shielding holes include: a first conductive connection hole, a second conductive connection hole, and a third conductive connection hole. In the first shielding hole, the projections of the first conductive connection hole, the second conductive connection hole, and the third conductive connection hole in a direction perpendicular to the surface of the support layer have an overlapping area, and one end of the third conductive connection hole is in contact with the first conductive connection hole, and the other end is in contact with the second conductive connection hole. The first shielding hole is electrically connected to the first shielding part, the first conductive part, the second conductive part, and the second shielding part, that is, the first shielding hole also has a shielding effect. In a specific implementation, the first shielding hole can be grounded. In the embodiment of the present application, by setting a plurality of first shielding holes, inter-plate resonance and other interference components can be suppressed.

[0022] In a possible implementation, the plurality of first shielding holes in the probe body are distributed on both sides of the detection line and extend from the detection end to the connection end. In a specific implementation, the plurality of first shielding holes in the probe body can be symmetrically distributed (or approximately symmetrically distributed) on both sides of the detection line, so that the first shielding holes can be evenly distributed on both sides of the detection line, thereby achieving a better shielding effect.

[0023] In an embodiment of the present application, the probe body has at least one second shielding hole, and the second shielding hole only includes: a second conductive connection hole, the second shielding hole is located at the detection end of the probe body, and the second shielding hole and the projection of the detection line in a direction perpendicular to the surface of the support layer have an overlapping area. By setting the second shielding hole, the interference signal at the detection end can be shielded, and the resolution of the electric field detection can be further improved. In specific implementation, the number of second shielding holes can be set according to the space of the probe body, which is not limited here.

[0024] In an embodiment of the present application, the connection end of the probe body may include: a first connection part, a second connection part and an impedance matching via. The first connection part and the second conductive part are located in the same film layer (i.e., the above-mentioned second conductive film layer), and the second connection part and the second shielding part are located in the same film layer (i.e., the above-mentioned third conductive film layer). The impedance matching via may include: a first conductive via and a second conductive via in contact connection, the first conductive via passing through the detection line, the support layer and the first connection part, and the second conductive via passing through the second dielectric layer and the second connection part. The detection line is electrically connected to the first connection part through the first conductive via, the first connection part is electrically connected to the second connection part through the second conductive via, and the second connection part is used to connect to the detection device. Specifically, the second connection part can be connected to the detection device through a connector. In an embodiment of the present application, by providing an impedance matching via, a first connection part and a second connection part, an electrical connection between the detection line and the detection device can be achieved at the connection end.

[0025] In a specific implementation, the aperture of the impedance matching via can be set larger, for example, the aperture of the impedance matching via can be larger than the aperture of the first shielding hole (or the second shielding hole) so that the impedance of the impedance matching via is smaller. In addition, the impedance matching via can be equivalent to an inductor, and the second connecting portion can be equivalent to a capacitor. The resonance between the impedance matching via and the second connecting portion can reduce the transmission impedance, reduce the loss of the detection signal during the transmission process, and improve the accuracy of the electric field detection.

[0026] Specifically, the second connection part may include: a covering part and a connecting line, wherein the covering part covers the impedance matching via in a direction perpendicular to the support layer, and the connecting line is connected to the covering part, and the connecting line is used to connect to the detection device. The covering part is electrically connected to the impedance matching via, and the transmission impedance can be reduced by the resonance between the covering part and the impedance matching via. The covering part leads out the detection signal through the connecting line, and the line width of the connecting line is smaller than the size of the covering part, thereby reducing the transmission loss in the process of leading out the detection signal.

[0027] In an embodiment of the present application, the transmission part of the probe body may further include: a first solder resist layer and a second solder resist layer, the first solder resist layer being located on the side of the film layer where the first shielding part is located away from the support layer, and the second solder resist layer being located on the side of the second shielding part away from the support layer. The first solder resist layer and the second solder resist layer may be flat whole-surface film layers, so as to cover the internal film layer of the probe body, and play the role of insulating the external conductor and protecting it. In a specific implementation, the thickness of the first solder resist layer and the second solder resist layer may be between 12 μm and 30 μm.

[0028] In the second aspect, the embodiment of the present application also provides a detection system. The detection system provided by the embodiment of the present application may include: any electric field probe and detection equipment in the above-mentioned first aspect. The electric field probe can be used to detect the electric field of the object to be tested, and transmit the detection signal obtained by the detection to the detection equipment. The detection equipment can determine the electric field of the object to be tested based on the detection signal obtained by the electric field probe. Exemplarily, the detection equipment in the embodiment of the present application may be a spectrum analyzer, an oscilloscope and other equipment. Since the resolution of the electric field probe provided in the embodiment of the present application is relatively high, the detection accuracy of the detection system including the electric field probe in the embodiment of the present application is relatively high and the near-field test effect is relatively good.

[0029] Furthermore, the detection system in the embodiment of the present application may also include: a controller and a mechanical arm, the mechanical arm may be used to fix the electric field probe, and the controller may be used to control the stepping movement of the mechanical arm to drive the electric field probe to move accurately. Since the resolution of the electric field probe in the embodiment of the present application is relatively high, the precise movement of the electric field probe by the controller and the mechanical arm can realize accurate electric field detection of the detection area of ​​the object to be detected. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A schematic diagram of the structure of an electric field probe provided in an embodiment of the present application;

[0031] Figure 2 This is a schematic diagram of the structure of the probe body in the embodiment of the present application;

[0032] Figure 3 for Figure 2 A schematic cross-sectional view at the middle dashed line L1;

[0033] Figure 4 This is a schematic diagram of the three-dimensional structure of the probe body at the detection end in the embodiment of the present application;

[0034] Figure 5 This is another three-dimensional structural schematic diagram of the probe body at the detection end in the embodiment of the present application;

[0035] Figure 6 This is a schematic structural diagram of the first conductive film layer, the first dielectric layer and the first shielding portion in an embodiment of the present application;

[0036] Figure 7 This is a schematic diagram of the structure of the second conductive film layer, the third conductive film layer and the second dielectric layer in the embodiment of the present application;

[0037] Figure 8 This is a schematic diagram of the structure of the first conductive film layer, the second conductive film layer and the support layer in the embodiment of the present application;

[0038] Fig. 9 This is another three-dimensional structural schematic diagram of the probe body at the detection end in the embodiment of the present application;

[0039] Fig.10 This is a schematic diagram of the three-dimensional structure of the probe body at the connection end in the embodiment of the present application;

[0040] Fig.11 for Fig.10 A schematic cross-sectional view at the middle dotted line L2;

[0041] Fig.12 for Fig.10 A schematic diagram of the planar structure of the third conductive film layer;

[0042] Fig.13 A schematic diagram of the planar structure of the first solder resist layer or the second solder resist layer in an embodiment of the present application;

[0043] Fig.14 This is an analysis diagram of the electric field detection effect in the embodiment of the present application.

[0044] Reference numerals:

[0045] 100-probe body; 11-support layer; 12-first conductive film layer; 121-detection line; 122-first conductive part; 131-first shielding layer; 132-second shielding layer; 133-third shielding layer; 14-first shielding part; 15-first dielectric layer; 16-second conductive film layer; 161-second conductive part; 162-first connecting part; 17-third conductive film layer; 171-second shielding part; 172-second connecting part; 172a-covering part; 172b-connecting line; 18-second dielectric layer Layer; 191-first solder resist layer; 192-second solder resist layer; 200-connector; 300-fixing piece; 301-first fixing part; 302-second fixing part; W-object to be tested; m-detection area; A-detection end; B-connection end; C-transmission part; T-detection through hole; V1-first conductive connection hole; V2-second conductive connection hole; V3-third conductive connection hole; Q1-first shielding hole; Q2-second shielding hole; Q3-impedance matching via; U1-first conductive via; U2-second conductive via. DETAILED DESCRIPTION

[0046] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings.

[0047] It should be noted that the same reference numerals in the drawings of this application represent the same or similar structures, and thus their repeated description will be omitted. The words expressing positions and directions described in this application are all explained using the drawings as examples, but they can be changed as needed, and the changes are included in the protection scope of this application. The drawings of this application are only used to illustrate the relative position relationship and do not represent the true proportion.

[0048] In the related art, the resolution of the electric field probe is low (generally above 0.2mm) and the near-field test effect is poor. When the electric field in the detection area changes dramatically with the fine lines or patterns, the electric field probe in the related art is not sensitive to the fine lines or patterns and cannot detect the changes in the electric field. Therefore, the electric field probe in the related art can only detect large areas above the board level and cannot perform electric field detection on fine lines or patterns at the chip level or packaging level.

[0049] Based on this, in order to improve the resolution of the electric field probe to meet the electric field detection requirements at the chip level or the package level. The embodiment of the present application provides a probe body, an electric field probe and a detection system. The electric field probe provided in the embodiment of the present application has a high resolution, which can reach a high resolution of less than 0.2 mm, and can improve the near-field test effect. Therefore, the electric field probe in the embodiment of the present application can detect the electric field changes of small traces or graphics, and can meet the electric field detection requirements at the chip level or the package level. For example, the electric field radiated by each functional module (such as an analog module, a digital module, etc.) in the chip can be detected.

[0050] First, the detection system provided in the embodiment of the present application is introduced. The detection system provided in the embodiment of the present application may include: an electric field probe and a detection device. The electric field probe can be used to detect the electric field of the object to be tested, and transmit the detection signal obtained by the detection to the detection device. The detection device can determine the electric field of the object to be tested based on the detection signal obtained by the electric field probe. Exemplarily, the detection device in the embodiment of the present application may be a spectrum analyzer, an oscilloscope and other equipment. Since the resolution of the electric field probe provided in the embodiment of the present application is relatively high, the detection accuracy of the detection system including the electric field probe in the embodiment of the present application is relatively high and the near-field test effect is relatively good.

[0051] Furthermore, the detection system in the embodiment of the present application may also include: a controller and a mechanical arm, the mechanical arm may be used to fix the electric field probe, and the controller may be used to control the stepping movement of the mechanical arm to drive the electric field probe to move accurately. Since the resolution of the electric field probe in the embodiment of the present application is relatively high, the precise movement of the electric field probe by the controller and the mechanical arm can realize accurate electric field detection of the detection area of ​​the object to be detected.

[0052] Figure 1 A schematic diagram of the structure of the electric field probe provided in the embodiment of the present application is shown in FIG. Figure 1 As shown, the electric field probe in the embodiment of the present application may include: a probe body 100, a connector 200 and a fixing member 300, wherein the probe body 100 has a detection end A and a connection end B, wherein the detection end A is used to detect the electric field of the object to be measured W, and the connection end B is used to connect the detection device. The probe body 100 is connected to the connector 200 through the connection end B, and the probe body 100 is used to be electrically connected to the detection device through the connector 200. The fixing member 300 is used to fix the connection between the probe body 100 and the connector 200. Specifically, the fixing member 300 may include a first fixing portion 301 and a second fixing portion 302, wherein the second fixing portion 302 is used to be fixedly connected to the mechanical arm, and the first fixing portion 301 is used to fix the connection between the second fixing portion 302, the probe body 100 and the connector 200.

[0053] In a specific implementation, the probe body 100 can be controlled to move precisely by a robotic arm so as to place the probe body 100 on the object to be measured W. The probe body 100 can detect the electric field of the object to be measured W at the detection end A, and transmit the detected detection signal to the detection device through the connector 200. The detection device can determine the electric field of the object to be measured W according to the detection signal detected by the detection body 100, thereby realizing electric field detection of the object to be measured W.

[0054] Figure 2 This is a schematic diagram of the structure of the probe body in the embodiment of the present application. Figure 3 for Figure 2Schematic diagram of the cross section at the dotted line L1, Figure 4 and Figure 5 The three-dimensional structure diagrams of the probe body at the detection end are shown in different viewing angles. Figures 1 to 5 The probe body 100 in the embodiment of the present application may include: a transmission part C, a detection line 121, and a detection end A and a connection end B respectively arranged at both ends of the transmission part C. The detection line 121 is arranged inside the transmission part C. The end surface of the detection end A is provided with a first shielding layer 131, and a detection through hole T is provided in the first shielding layer 131. The detection line 121 extends from the connection end B along the transmission part C to the detection through hole T, and the detection line 121 is insulated from the first shielding layer 131. The detection line 121 can leak out through the detection through hole T in the first shielding layer 131. The first shielding layer 131 can play a role in shielding the electric field. In a specific implementation, the first shielding layer 131 can be grounded. The detection line 121 is used to detect the electric field of the object to be measured W at the detection end A through the detection through hole T, and transmit the detection signal obtained through the transmission part C to the connection end B.

[0055] During the electric field detection process, the detection end A of the probe body 100 can be made perpendicular to the surface of the object to be detected W, and the first shielding layer 131 can shield the electric field in directions other than the vertical direction, so that only the electric field in the vertical direction can be detected by the detection line 121, wherein the vertical direction refers to the direction perpendicular to the surface of the object to be detected W, for example Figure 1 The detection line 121 leaking out of the detection hole T can form a potential difference with the first shielding layer 131 and couple with the electric field in the vertical direction z, so that the component of the electric field in the vertical direction z can be detected, and the detection signal obtained by the detection can be approximately proportional to the component of the electric field in the vertical direction z.

[0056] In the electric field probe provided in the embodiment of the present application, by setting the first shielding layer 131 at the end of the detection end A of the probe body 100, and the detection line 121 leaks out through the detection through hole T in the first shielding layer 131, the electric field in the vertical direction can be accurately detected, the interference of the electric field in other directions can be eliminated, and the resolution of the electric field detection can be improved. In addition, the electric field probe in the embodiment of the present application can be manufactured using a chip carrier board process, and the chip carrier board process can produce a routing line with a smaller line width, so that a thinner detection line 121 can be produced, for example, a detection line 121 with a line width of about 15μm can be produced, and the overall thickness of the probe body 100 can be less than 0.7mm, for example, the overall thickness of the probe body 100 can be in the range of 0.4mm to 0.7mm, thereby further improving the resolution of the electric field probe, so that the resolution reaches less than 0.1mm.

[0057] In a possible implementation, the end of the detection line 121 can be flush with the outer surface of the first shielding layer 131, and an insulating dielectric material can be filled between the detection line 121 and the inner wall of the detection through hole T to ensure that the detection line 121 and the first shielding layer 131 are insulated. The detection line 121 and the first shielding layer 131 can be made of metal materials such as copper, silver, and iron. Of course, the detection line 121 and the first shielding layer 131 can also be made of other conductive materials, which are not limited here. The thickness of the detection line 121 can be in the range of 15μm to 50μm.

[0058] Reference Figure 1 and Figure 2 In the embodiment of the present application, the probe body 100 is taken as a folded line for illustration. In the specific implementation, the shape of the probe body 100 can be set according to actual needs, which is not limited here.

[0059] Reference Figure 2 , Figure 4 and Figure 5 In an embodiment of the present application, the probe body 100 may further include: a second shielding layer 132 and a third shielding layer 133, the second shielding layer 132 and the third shielding layer 133 respectively cover the two opposite outer sides of the transmission part C, and extend from the detection end A along the transmission part C to the connection end B. In other words, the two opposite outer sides of the probe body 100 are completely wrapped by the second shielding layer 132 and the third shielding layer 133, and the second shielding layer 132 and the third shielding layer 133 can play a shielding role, thereby preventing the detection signal transmitted in the detection line 121 from being interfered by external signals, and further improving the resolution of electric field detection. In a specific implementation, the second shielding layer 132 and the third shielding layer 133 can be grounded. In addition, the use of a shielding layer to wrap the outer side and end face of the probe body 100 can also prevent the detection signal transmitted in the detection line 121 from affecting the electric field of the object W to be measured.

[0060] In a possible implementation, the second shielding layer 132 and the third shielding layer 133 may be made of metal materials such as copper, silver, and iron. Of course, the second shielding layer 132 and the third shielding layer 133 may also be made of other conductive materials, which is not limited here.

[0061] like Figure 2 and Figure 3As shown, in the probe body provided in the embodiment of the present application, the transmission part C of the probe body may include: a support layer 11, a first shielding part 14 and a first conductive part 122. The support layer 11 can be used to support the detection line 121 and the first conductive part 122. The support layer 11 can be made of an insulating dielectric material. The thickness of the support layer 11 can be between 90 μm and 110 μm. For example, the thickness of the support layer 11 can be about 100 μm, and the support layer 11 is hard, so that it can carry the detection line 121 and other film layers mentioned later. The detection line 121 and the first conductive part 122 are located on the surface of one side of the support layer 11, and the first shielding part 14 is located on the side of the detection line 121 and the first conductive part 122 away from the support layer 11. The first conductive part 122 can be located in the same film layer as the detection line 121. In the embodiment of the present application, the film layer where the detection line 121 and the first conductive part 122 are located is referred to as the first conductive film layer 12. The first conductive part 122 is electrically connected to the first shielding part 14, and the first conductive part 122 is insulated from the detection line 121. The first shielding part 14 can play a shielding role to prevent the detection signal transmitted in the detection line 121 from being interfered by external signals, and can also prevent the detection signal transmitted in the detection line 121 from affecting the electric field of the object to be measured. In a specific implementation, the first shielding part 14 can be grounded. In the direction perpendicular to the surface of the supporting layer 11, the first shielding part 14 can cover the detection line 121, thereby achieving a better shielding effect. In addition, the first conductive part 122 is set to be electrically connected to the first shielding part 14, which can enhance the shielding effect. In a specific implementation, the first shielding part 14 can be made of metal materials such as copper, silver, and iron. Of course, the first shielding part 14 can also be made of other conductive materials, which is not limited here. The thickness of the first shielding part 14 can be in the range of 12μm to 35μm.

[0062] Continue to refer to Figure 2 and Figure 3 The transmission part of the probe body may also include: a first dielectric layer 15 and at least one first conductive connection hole V1, the first dielectric layer 15 is located between the first shielding part 14 and the first conductive film layer 12, the first conductive connection hole V1 penetrates the first dielectric layer 15 and the first shielding part 14, and the first conductive part 122 is electrically connected to the first shielding part 14 through the first conductive connection hole V1. In the manufacturing process, a through hole may be first formed in the first dielectric layer 15 and the first shielding part 14, and then a conductive film may be formed on the inner wall of the through hole using a conductive material such as metal, and then an insulating material or a conductive material may be filled in the through hole to form the first conductive connection hole V1. In a specific implementation, the first dielectric layer 15 may be made of an insulating dielectric material, and the thickness of the first dielectric layer 15 may be greater than or equal to 35 μm.

[0063] Figure 6 This is a schematic diagram of the structure of the first conductive film layer, the first dielectric layer and the first shielding portion in an embodiment of the present application. Figure 6 (1) is a schematic diagram of the structure of the first conductive film layer 12, Figure 6 (2) is a schematic diagram of the structure of the first dielectric layer 15. Figure 6 (3) is a schematic diagram of the structure of the first shielding portion 14, combined with Figure 3 and Figure 6 The first conductive part 122 may include two conductive parts located on both sides of the detection line 121, so that the interference signal on the side of the detection line 121 can be shielded. In the direction perpendicular to the surface of the support layer 11, the first shielding part 14 can cover the detection line 121 and the first conductive part 122. The first shielding part 14 has a larger coverage range and can achieve a better shielding effect. In addition, in the direction perpendicular to the surface of the support layer 11, the first dielectric layer 15 can cover the detection line 121 and the first conductive part 122, so as to achieve a better insulation and filling effect.

[0064] Furthermore, if Figure 2 and Figure 3 As shown, the transmission part of the probe body in the implementation of the present application may also include: a second conductive part 161 and a second shielding part 171. The second conductive part 161 is located on the surface of the support layer 11 away from the detection line 121, the second shielding part 171 is located on the side of the second conductive part 161 away from the support layer 11, and the second conductive part 161 is electrically connected to the second shielding part 171. The second shielding part 171 can play a shielding role to prevent the detection signal transmitted in the detection line 121 from being interfered by external signals, and can also prevent the detection signal transmitted in the detection line 121 from affecting the electric field of the object to be measured. In a specific implementation, the second shielding part 171 can be grounded. In the direction perpendicular to the surface of the support layer 11, the second shielding part 171 can cover most of the area of ​​the detection line 121, thereby achieving a better shielding effect. In addition, the second conductive part 161 is set to be electrically connected to the second shielding part 171, which can enhance the shielding effect. In a specific implementation, the second shielding portion 171 and the second conductive portion 161 can be made of metal materials such as copper, silver, and iron. Of course, the second shielding portion 171 and the second conductive portion 161 can also be made of other conductive materials, which are not limited here. The thickness of the second shielding portion 171 can be in the range of 12μm to 35μm, and the thickness of the second conductive portion 161 can be in the range of 15μm to 50μm. In this way, the detection line 121 is surrounded by a shielding layer (or shielding portion), which can effectively prevent external signals from interfering with the detection signal, so that the electric field probe has a higher resolution.

[0065] Continue to refer to Figure 2 and Figure 3The transmission part of the probe body may also include: a second dielectric layer 18 and at least one second conductive connection hole V2, the second dielectric layer 18 is located between the second conductive part 161 and the second shielding part 171, the second conductive connection hole V2 penetrates the second dielectric layer 18 and the second shielding part 171, and the second conductive part 161 is electrically connected to the second shielding part 171 through the second conductive connection hole V2. In the manufacturing process, a through hole may be first formed in the second dielectric layer 18 and the second shielding part 171, and then a conductive film may be formed on the inner wall of the through hole using a conductive material such as metal, and then an insulating material or a conductive material may be filled in the through hole to form the second conductive connection hole V2. In a specific implementation, the second dielectric layer 18 may be made of an insulating dielectric material, and the thickness of the second dielectric layer 18 may be greater than or equal to 35 μm.

[0066] Figure 7 It is a schematic structural diagram of the second conductive film layer, the third conductive film layer and the second dielectric layer in an embodiment of the present application, wherein the second conductive film layer is the film layer where the second conductive part is located, and the third conductive film layer is the film layer where the second shielding part is located. Figure 7 (1) is a schematic diagram of the structure of the third conductive film layer 17. Figure 7 (2) is a schematic diagram of the structure of the second dielectric layer 18, Figure 7 (3) is a schematic diagram of the structure of the second conductive film layer 16, combined with Figure 3 , Figure 6 and Figure 7 In the direction perpendicular to the surface of the support layer 11, the pattern of the second conductive part 161 surrounds the detection line 121, which can shield the interference signal on the upper side of the detection line 121, that is, the pattern of the second conductive part 161 can be ring-shaped. In the direction perpendicular to the surface of the support layer 11, the second shielding part 171 can cover most of the area of ​​the detection line 121 and the second conductive part 161, which can achieve a good shielding effect. In addition, in the direction perpendicular to the surface of the support layer 11, the second dielectric layer 18 can cover the second conductive part 161 and the second shielding part 171, so as to achieve a good insulation and filling effect.

[0067] Figure 8 This is a schematic diagram of the structure of the first conductive film layer, the second conductive film layer and the support layer in the embodiment of the present application. Figure 8 (1) is a schematic diagram of the structure of the second conductive film layer 16, Figure 8 (2) is a schematic diagram of the structure of the support layer 11. Figure 8 (3) is a schematic diagram of the structure of the first conductive film layer 12, combined with Figure 3 and Figure 8In the embodiment of the present application, the transmission part of the probe body may also include: a third conductive connection hole V3, the third conductive connection hole V3 passes through the first conductive part 122, the support layer 11 and the second conductive part 161, and the first conductive part 122 is electrically connected to the second conductive part 161 through the third conductive connection hole V3. In other words, the first shielding part 14, the first conductive part 122, the second conductive part 161 and the second shielding part 171 with a shielding effect are electrically connected, thereby improving the shielding effect. In the manufacturing process, a through hole passing through the first conductive part 122, the support layer 11 and the second conductive part 161 can be first made, and then a conductive film is formed on the inner wall of the through hole using a conductive material such as a metal, and then an insulating material or a conductive material is filled in the through hole to form the third conductive connection hole V3.

[0068] Combination Figure 2 , Figure 3 , Figure 6 , Figure 7 and Figure 8 In some embodiments of the present application, the transmission part of the probe body 100 has a plurality of first shielding holes Q1, and the first shielding holes Q1 include: a first conductive connection hole V1, a second conductive connection hole V2, and a third conductive connection hole V3. In the first shielding hole Q1, the projections of the first conductive connection hole V1, the second conductive connection hole V2, and the third conductive connection hole V3 in a direction perpendicular to the surface of the support layer 11 (for example, the direction indicated by the arrow y in the figure) have an overlapping area, and one end of the third conductive connection hole V3 is in contact with the first conductive connection hole V1, and the other end is in contact with the second conductive connection hole V2. The first shielding hole Q1 is electrically connected to the first shielding part 14, the first conductive part 122, the second conductive part 161, and the second shielding part 171, that is, the first shielding hole Q1 also has a shielding effect. In a specific implementation, the first shielding hole Q1 can be grounded. In the embodiment of the present application, by setting a plurality of first shielding holes Q1, inter-plate resonance and other interference components can be suppressed.

[0069] In a possible implementation, the plurality of first shielding holes Q1 in the probe body 100 are distributed on both sides of the detection line 121, and extend from the detection end A to the connection end B. In a specific implementation, the plurality of first shielding holes Q1 in the probe body 100 may be symmetrically distributed (or approximately symmetrically distributed) on both sides of the detection line 121, so that the first shielding holes Q1 may be evenly distributed on both sides of the detection line 121, thereby achieving a better shielding effect.

[0070] Fig. 9 This is another three-dimensional structural diagram of the probe body at the detection end in the embodiment of the present application, combined with Figure 3 , Figure 7 and Fig. 9, the probe body 100 has at least one second shielding hole Q2, the second shielding hole Q2 only includes: a second conductive connection hole V2, the second shielding hole Q2 is located at the detection end of the probe body 100, and the second shielding hole Q2 and the projection of the detection line 121 in a direction perpendicular to the surface of the support layer 11 (for example, the direction shown by the arrow y in the figure) have an overlapping area. By setting the second shielding hole Q2, the interference signal at the detection end can be shielded, and the resolution of the electric field detection can be further improved. The figure takes the setting of a second shielding hole Q2 as an example for illustration. In the specific implementation, the number of second shielding holes Q2 can be set according to the space of the probe body, which is not limited here.

[0071] Fig.10 Schematic diagram of the three-dimensional structure of the probe body at the connection end in the embodiment of the present application, Fig.11 for Fig.10 The cross-sectional diagram at the dotted line L2 is as follows: Fig.10 and Fig.11 As shown, in the embodiment of the present application, the connection end of the probe body may include: a first connection part 162, a second connection part 172 and an impedance matching via Q3. The first connection part 162 and the second conductive part 161 are located in the same film layer (i.e., the above-mentioned second conductive film layer), and the second connection part 172 and the second shielding part 171 are located in the same film layer (i.e., the above-mentioned third conductive film layer). The impedance matching via Q3 may include: a first conductive via U1 and a second conductive via U2 in contact connection, the first conductive via U1 passing through the detection line 121, the support layer 11 and the first connection part 162, and the second conductive via U2 passing through the second dielectric layer 18 and the second connection part 172. The detection line 121 is electrically connected to the first connection part 162 through the first conductive via U1, the first connection part 162 is electrically connected to the second connection part 172 through the second conductive via U2, and the second connection part 172 is used to connect to the detection device. Specifically, the second connection part 172 can be connected to the detection device through a connector. In the embodiment of the present application, by providing the impedance matching via Q3, the first connecting portion 162 and the second connecting portion 172, an electrical connection between the detection line 121 and the detection device can be achieved at the connection end.

[0072] In a specific implementation, the aperture of the impedance matching via Q3 can be set larger, for example, the aperture of the impedance matching via Q3 can be larger than the aperture of the first shielding hole Q1 (or the second shielding hole Q2) so that the impedance of the impedance matching via Q3 is smaller. In addition, the impedance matching via Q3 can be equivalent to an inductor, and the second connecting portion 172 can be equivalent to a capacitor. The resonance between the impedance matching via Q3 and the second connecting portion 172 can reduce the transmission impedance, reduce the loss of the detection signal during the transmission process, and improve the accuracy of the electric field detection.

[0073] Fig.12 for Fig.10Schematic diagram of the planar structure of the third conductive film layer, combined with Fig.10 and Fig.12 The second connection part 172 may include: a covering part 172a and a connecting line 172b, wherein the covering part 172a covers the impedance matching via Q3 in a direction perpendicular to the support layer, and the connecting line 172b is connected to the covering part 172a, and the connecting line 172b is used to connect to the detection device. The covering part 172a is electrically connected to the impedance matching via Q3, and the transmission impedance can be reduced through the resonance between the covering part 172a and the impedance matching via Q3. The covering part 172a leads out the detection signal through the connecting line 172b, and the line width of the connecting line 172b is smaller than the size of the covering part 172a, thereby reducing the transmission loss in the process of leading out the detection signal.

[0074] In the embodiments of the present application, Figure 3 As shown, the transmission part of the above-mentioned probe body may also include: a first solder resist layer 191 and a second solder resist layer 192, the first solder resist layer 191 is located on the side of the film layer where the first shielding part 14 is located away from the supporting layer 11, and the second solder resist layer 192 is located on the side of the second shielding part 171 away from the supporting layer 11. Fig.13 FIG. 1 is a schematic diagram of the planar structure of the first solder resist layer or the second solder resist layer in the embodiment of the present application, Figure 3 and Fig.13 The first solder resist layer 191 and the second solder resist layer 192 are flat whole-surface film layers, so as to cover the inner film layer of the probe body, and play the role of insulating the external conductor and protecting. In a specific implementation, the thickness of the first solder resist layer 191 and the second solder resist layer 192 can be between 12 μm and 30 μm.

[0075] Fig.14 This is an analysis diagram of the electric field detection effect in the embodiment of the present application. Fig.14 (1) is a schematic diagram of the plane of the object to be measured. Fig.14 (2) is a schematic diagram of the analysis structure for electric field detection of the detection area of ​​the object to be detected. The horizontal axis in the figure represents

[0076] like Fig.14 As shown, there are three lines in the object to be tested W, the line width of the lines is about 0.1mm, and the line spacing between adjacent lines is about 0.1mm. The electric field probe in the embodiment of the present application is used to detect the electric field of the object to be tested W. The electric field probe is placed above the object to be tested W, and the detection area m is scanned to detect the electric field distribution in the detection area m, and the electric field distribution in the detection area m is obtained. Fig.14 The result shown in (2) in . Fig.14 It can be clearly seen from (2) in the embodiment of the present application that the electric field probe can detect the electric field distribution in the detection area m. In the figure, d1 represents the line width of the line, and d2 represents the line distance of the line. Fig.14The result shown in (2) in FIG. 1 shows that the line width d1 is about 0.1 mm and the line spacing d2 is about 0.1 mm, which proves that the electric field probe in the embodiment of the present application can achieve a detection resolution of 0.1 mm. In specific implementation, the electric field probe in the embodiment of the present application can perform electric field detection in the frequency range of 30 MHz to 6 GHz.

[0077] The structure of the probe body in the embodiment of the present application is described in detail above. Figure 3 and Fig.11 , introduces the manufacturing process of the probe body in the embodiment of the present application.

[0078] During the manufacturing process, a first conductive film layer 12 and a second conductive film layer 16 can be respectively formed on the surfaces of both sides of the support layer 11, and the first conductive film layer 12 and the second conductive film layer 16 can be respectively patterned to obtain a detection line 121 and a first conductive portion 122 located in the first conductive film layer 12, and a second conductive portion 161 and a first connecting portion 162 located in the second conductive film layer 16.

[0079] The stacked structure of the first conductive film layer 12, the support layer 11 and the second conductive film layer 16 is punched mechanically to obtain the third conductive connection hole V3 and the first conductive via U1. In the specific implementation, holes can be punched on both sides of the stacked structure to reduce the difficulty of the punching process.

[0080] Afterwards, a second dielectric layer 18 and a third conductive film layer 17 are formed on the surface of the second conductive film layer 16, and the third conductive film layer 17 is patterned to obtain a second shielding portion 171 and a second connecting portion 172 located in the third conductive film layer 17, and a punching process is performed on the stacked structure of the second dielectric layer 18 and the third conductive film layer 17 to obtain a second conductive connecting hole V2 and a second conductive via U2. A first dielectric layer 15 and a first shielding portion 14 are formed on the surface of the first conductive film layer 12, and a punching process is performed on the stacked structure of the first dielectric layer 15 and the first shielding portion 14 to obtain a first conductive connecting hole V1.

[0081] Finally, a first solder resist layer 191 is formed on the surface of the first shield portion 14 , and a second solder resist layer 192 is formed on the surface of the third conductive film layer 17 .

[0082] The electric field probe in the embodiment of the present application can be manufactured using a chip carrier board process. The chip carrier board process can produce routing lines with smaller line widths. Therefore, a thinner detection line 121 can be produced. For example, a detection line 121 with a line width of about 15 μm can be produced. The overall thickness of the probe body 100 can be less than 0.7 mm, thereby improving the resolution of the electric field probe to less than 0.1 mm.

[0083] Although the preferred embodiments of the present application have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the present application.

[0084] Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present application without departing from the spirit and scope of the embodiments of the present application. Thus, if these modifications and variations of the embodiments of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A probe body, characterized in that: It comprises a transmission part, a detection line, and a detection end and a connection end respectively arranged at two ends of the transmission part, wherein the detection line is arranged inside the transmission part; The detection end is used to detect the electric field of the object to be detected; The connection end is used to connect the detection equipment; The end surface of the detection end is provided with a first shielding layer, and the first shielding layer is provided with a detection through hole; The detection line extends from the connection end along the transmission part to the detection through hole, and the detection line is insulated from the first shielding layer; the detection line is used to detect the electric field of the object to be detected at the detection end through the detection through hole, and transmit the detection signal obtained by detection to the connection end through the transmission part.

2. The probe body according to claim 1, characterized in that: The probe body also includes: a second shielding layer and a third shielding layer; The second shielding layer and the third shielding layer respectively cover two opposite outer side surfaces of the transmission portion, and extend from the detection end along the transmission portion to the connection end.

3. The probe body according to claim 1 or 2, characterized in that: The transmission part comprises: a supporting layer, a first shielding part and a first conductive part; The supporting layer is used to support the detection line and the first conductive part; The first shielding portion is located at a side of the detection line and the first conductive portion away from the supporting layer; The first conductive portion is electrically connected to the first shielding portion, and the first conductive portion is insulated from the detection line.

4. The probe body according to claim 3, characterized in that: The transmission part further includes: a first dielectric layer and at least one first conductive connection hole; The first dielectric layer is located between the first shielding portion and the film layer where the detection line is located; The first conductive connection hole penetrates the first dielectric layer and the first shielding portion, and the first conductive portion is electrically connected to the first shielding portion through the first conductive connection hole.

5. The probe body according to claim 4, characterized in that: The transmission part further includes: a second conductive part and a second shielding part; The second conductive portion is located on a surface of the support layer away from the detection line, and the second shielding portion is located on a side of the second conductive portion away from the support layer; The second conductive portion is electrically connected to the second shielding portion.

6. The probe body according to claim 5, characterized in that: The transmission part further includes: a second dielectric layer and at least one second conductive connection hole; The second dielectric layer is located between the second conductive portion and the second shielding portion; The second conductive connection hole penetrates the second dielectric layer and the second shielding portion, and the second conductive portion is electrically connected to the second shielding portion through the second conductive connection hole.

7. The probe body according to claim 6, characterized in that: The transmission part further includes: a third conductive connection hole; The third conductive connection hole penetrates the first conductive part, the support layer and the second conductive part; The first conductive portion is electrically connected to the second conductive portion through the third conductive connection hole.

8. The probe body according to claim 7, characterized in that: The transmission part also has a plurality of first shielding holes; The first shielding hole includes: the first conductive connection hole, the second conductive connection hole and the third conductive connection hole; In the first shielding hole, the projections of the first conductive connection hole, the second conductive connection hole and the third conductive connection hole in a direction perpendicular to the surface of the supporting layer have an overlapping area, and one end of the third conductive connection hole is in contact with the first conductive connection hole, and the other end is in contact with the second conductive connection hole.

9. The probe body according to claim 8, characterized in that: The plurality of first shielding holes are distributed on both sides of the detection line and extend from the detection end to the connection end.

10. The probe body according to any one of claims 6 to 9, characterized in that: The probe body has at least one second shielding hole; The second shielding hole only includes: the second conductive connection hole; The second shielding hole is located at the detection end, and the second shielding hole has an overlapping area with a projection of the detection line in a direction perpendicular to the surface of the support layer.

11. The probe body according to any one of claims 6 to 10, characterized in that: The connecting end comprises: a first connecting portion, a second connecting portion and an impedance matching via located at the connecting end; The first connecting portion and the second conductive portion are located in the same film layer, and the second connecting portion and the second shielding portion are located in the same film layer; The impedance matching via comprises: a first conductive via and a second conductive via in contact connection; The first conductive via penetrates the detection line, the support layer and the first connecting portion, and the second conductive via penetrates the second dielectric layer and the second connecting portion; The detection line is electrically connected to the first connection portion through the first conductive via, and the first connection portion is electrically connected to the second connection portion through the second conductive via; The second connecting portion is used to connect to a detection device.

12. The probe body according to claim 11, characterized in that: The second connecting portion includes: a covering portion and a connecting line; The covering portion covers the impedance matching via in a direction perpendicular to the supporting layer, and the connecting wire is connected to the covering portion; The connecting line is used to connect with the detection device.

13. The probe body according to any one of claims 5 to 12, characterized in that: The transmission part further includes: a first solder resist layer and a second solder resist layer; The first solder resist layer is located on a side of the film layer where the first shielding portion is located away from the supporting layer, and the second solder resist layer is located on a side of the second shielding portion away from the supporting layer.

14. An electric field probe, characterized in that: include: The probe body, the fixing part and the connector according to any one of claims 1 to 13; The probe body is connected to the connector via the connecting end, and the probe body is used to be electrically connected to the detection device via the connector; The fixing member is used for fixing and connecting the probe body and the connector.

15. A detection system, characterized in that: include: The electric field probe and detection device as claimed in claim 14; The electric field probe is used to detect the electric field of the object to be measured; The detection device is used to determine the electric field of the object to be detected based on the detection signal detected by the electric field probe.

Images