Chip electrical property detection device and manufacturing method thereof

Abstract

The invention provides a chip electrical property detection device and a manufacturing method thereof. The chip electrical detection device comprises a structure strengthening module, an electrical detection module and a flexible buffer structure. The electrical detection module comprises a probe bearing substrate, a plurality of electrical detection structures and a plurality of electrical connection structures. The flexible buffer structure comprises a flexible buffer material layer. The structure strengthening module, the electrical detection module and the flexible buffer structure cooperate with each other to form the chip electrical detection device. The probe bearing substrate is arranged on the flexible buffer material layer. The plurality of electrical detection structures are disposed on the probe bearing substrate and electrically connected to the plurality of electrical connection structures, respectively. Therefore, the probe bearing substrate can be configured to be in a state of allowing the position to be slightly adjusted through flexible bearing of the flexible buffer material layer, so that each electrical detection structure can be configured to be in a state of allowing the position to be slightly adjusted along with the probe bearing substrate.

Description

Technical Field

[0001] The present invention relates to a detection device and a manufacturing method thereof, and in particular to a chip electrical property detection device and a manufacturing method thereof. Background Art

[0002] In the prior art, during the lighting test of wafer-level micro LED chips or mini LED chips, multiple LED chips are lit up one by one in turn by powering the probe detection equipment, but the speed is quite slow. If multiple probe detection equipment are needed to make up for the lack of test speed, it will generate higher production costs and the overall production efficiency will be very low. Summary of the invention

[0003] The problem to be improved or solved by the present invention is to provide a chip electrical property detection device and a manufacturing method thereof in view of the deficiencies in the prior art.

[0004] In order to improve or solve the above-mentioned problems, one of the technical means adopted by the present invention is to provide a chip electrical detection device, which includes: a structural reinforcement module, an electrical detection module and a flexible buffer structure. The structural reinforcement module includes a structural reinforcement substrate. The electrical detection module includes a probe carrier substrate, multiple electrical detection structures and multiple electrical connection structures. The flexible buffer structure includes a flexible buffer material layer. Among them, the structural reinforcement module, the electrical detection module and the flexible buffer structure cooperate with each other to form a chip electrical detection device; wherein, the probe carrier substrate is arranged on the flexible buffer material layer, and the multiple electrical detection structures are arranged on the probe carrier substrate and are electrically connected to the multiple electrical connection structures respectively.

[0005] In order to improve or solve the above-mentioned problems, another technical means adopted by the present invention is to provide a method for manufacturing a chip electrical detection device, which includes: providing a structural reinforcement module, the structural reinforcement module includes a structural reinforcement substrate; providing an electrical detection module, the electrical detection module includes a probe carrier substrate, multiple electrical detection structures and multiple electrical connection structures; providing a flexible buffer structure, the flexible buffer structure includes a flexible buffer material layer; and, the structural reinforcement module, the electrical detection module and the flexible buffer structure cooperate with each other to form a chip electrical detection device. Among them, the probe carrier substrate is arranged on the flexible buffer material layer, and the multiple electrical detection structures are respectively arranged on multiple probe carrier substrates and are respectively electrically connected to the multiple electrical connection structures.

[0006] One of the beneficial effects of the present invention is that a chip electrical detection device provided by the present invention can be configured to allow the probe bearing substrate to be in a state of allowing slight adjustment of position through the flexible bearing of the flexible buffer material layer, whereby each electrical detection structure can be configured to allow the probe bearing substrate to be in a state of allowing slight adjustment of position along with the probe bearing substrate through the technical scheme of "the structural reinforcement module includes a structural reinforcement substrate", "the electrical detection module includes a probe bearing substrate, multiple electrical detection structures and multiple electrical connection structures", "the flexible buffer structure includes a flexible buffer material layer", "the structural reinforcement module, the electrical detection module and the flexible buffer structure cooperate with each other to constitute a chip electrical detection device", "the probe bearing substrate is arranged on the flexible buffer material layer" and "the multiple electrical detection structures are arranged on the probe bearing substrate and are respectively electrically connected to the multiple electrical connection structures".

[0007] One of the beneficial effects of the present invention is that the manufacturing method of a chip electrical detection device provided by the present invention can be achieved through the technical solutions of "providing a structural reinforcement module, the structural reinforcement module includes a structural reinforcement substrate", "providing an electrical detection module, the electrical detection module includes a probe carrying substrate, multiple electrical detection structures and multiple electrical connection structures", "providing a flexible buffer structure, the flexible buffer structure includes a flexible buffer material layer", "cooperating the structural reinforcement module, the electrical detection module and the flexible buffer structure to form a chip electrical detection device", "the probe carrying substrate is arranged on the flexible buffer material layer" and "the multiple electrical detection structures are respectively arranged on multiple probe carrying substrates and are respectively electrically connected to the multiple electrical connection structures", so that the probe carrying substrate can be configured to allow it to be in a state where it allows slight adjustment of its position through the flexible support of the flexible buffer material layer, whereby each electrical detection structure can be configured to allow it to be in a state where it allows slight adjustment of its position along with the probe carrying substrate.

[0008] To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and description and are not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 The present invention is a flowchart of a method for manufacturing a chip electrical property detection device provided by the first embodiment of the present invention.

[0010] Figure 2 This is an exploded schematic diagram of a circuit control module, an electrical property detection module, and a flexible conductive structure of a chip electrical property detection device provided in a first embodiment of the present invention.

[0011] Figure 3A schematic diagram of the cooperation between the circuit control module, the electrical detection module and the flexible conductive structure of the chip electrical detection device provided by the first embodiment of the present invention (before the multiple movable supporting substrates are separated from each other).

[0012] Figure 4 Schematic diagram of the cooperation between the circuit control module, the electrical detection module and the flexible conductive structure of the chip electrical detection device provided by the first embodiment of the present invention (after the multiple movable supporting substrates are separated from each other).

[0013] Figure 5 A schematic diagram of the chip electrical property inspection device provided by the first embodiment of the present invention before being pressed down to inspect a plurality of chips to be inspected.

[0014] Figure 6 A schematic diagram of the chip electrical property detection device provided by the first embodiment of the present invention when being pressed down to detect a plurality of chips to be detected.

[0015] Figure 7 This is a schematic diagram of the cooperation between a circuit control module, an electrical property detection module and a flexible conductive structure of a chip electrical property detection device provided by a second embodiment of the present invention.

[0016] Figure 8 This is a schematic diagram of the cooperation between a circuit control module, an electrical property detection module and a flexible conductive structure of a chip electrical property detection device provided by a third embodiment of the present invention.

[0017] Fig. 9 This is a flow chart of a method for manufacturing a chip electrical property detection device provided by a fourth embodiment of the present invention.

[0018] Fig.10 This is an exploded schematic diagram of a circuit control module, an electrical property detection module, and a flexible conductive structure of a chip electrical property detection device provided in a fourth embodiment of the present invention.

[0019] Fig.11 This is a schematic diagram of the cooperation between a circuit control module, an electrical property detection module and a flexible conductive structure of a chip electrical property detection device provided by a fourth embodiment of the present invention.

[0020] Fig.12 A schematic diagram of a chip electrical property inspection device provided by a fourth embodiment of the present invention before being pressed down to inspect a plurality of chips to be inspected.

[0021] Fig.13 A schematic diagram of a chip electrical property inspection device provided by a fourth embodiment of the present invention when being pressed down to inspect a plurality of chips to be inspected.

[0022] Fig.14This is a schematic diagram of the cooperation between a circuit control module, an electrical property detection module and a flexible conductive structure of a chip electrical property detection device provided by a fifth embodiment of the present invention. DETAILED DESCRIPTION

[0023] The following is an explanation of the implementation methods of the "chip electrical detection device" and "chip electrical detection device manufacturing method" disclosed in the present invention through specific embodiments. Those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without departing from the concept of the present invention. In addition, it should be stated in advance that the drawings of the present invention are only simple schematic illustrations and are not depicted according to actual dimensions. The following embodiments will further explain the relevant technical contents of the present invention in detail, but the disclosed contents are not intended to limit the scope of protection of the present invention. In addition, the term "or" used in this article may include any one or more combinations of the associated listed items depending on the actual situation.

[0024] First embodiment

[0025] See also Figures 1 to 6 As shown, the first embodiment of the present invention provides a method for manufacturing a chip electrical property detection device, which at least comprises: first, Figure 1 and Figure 2 As shown, a circuit control module 1 is provided, and the circuit control module 1 includes a circuit control substrate 11 and a plurality of electrical conduction structures 12 (step S100); then, Figure 1 and Figure 2 As shown, an electrical detection module 2 is provided, and the electrical detection module 2 includes a plurality of movable supporting substrates 21 (before the plurality of movable supporting substrates 21 are separated from each other), a plurality of electrical detection structures 22 and a plurality of electrical connection structures 23 (step S102); then, in conjunction with Figure 1 and Figure 2 As shown, a flexible conductive structure 3 is provided, and the flexible conductive structure 3 includes at least a flexible conductive material layer 30 (step S104); next, Figure 1 , Figure 2 and Figure 3 As shown, the circuit control module 1, the electrical detection module 2 and the flexible conductive structure 3 are matched with each other (for example, they are electrically bonded together) to form a chip electrical detection device D (step S106). Figure 3 and Figure 4 As shown, in step S106, the electrical detection module 2 can Figure 3The multiple cutting lines (multiple imaginary lines) shown perform a cutting step (or a material removal step) so that the multiple movable supporting substrates 21 can be separated from each other and can move independently. For example, after the multiple movable supporting substrates 21 are separated from each other through the cutting step (or material removal step), two adjacent movable supporting substrates 21 can be separated from each other by a predetermined distance, and the outer surrounding surface of each movable supporting substrate 21 can be a surrounding cutting surface 2100 (or a surrounding roughened surface) formed by the cutting method (or material removal method). However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0026] Furthermore, if Figure 2 As shown, the circuit control substrate 11 has a predetermined circuit layout (or a predetermined circuit pattern including conductive through holes, or a predetermined circuit track including conductive through holes, or an LED lighting circuit that can be made by semiconductor technology, which may include multiple scan lines and multiple data lines), and multiple electrical conduction structures 12 (or multiple electrical conduction pins) can be arranged on the circuit control substrate 11 and electrically connected to the predetermined circuit layout of the circuit control substrate 11. For example, in one of the feasible embodiments, the predetermined circuit layout of the circuit control substrate 11 may include one or more bottom circuits (not shown) arranged on the bottom of the circuit control substrate 11, one or more top circuits (not shown) arranged on the top of the circuit control substrate 11, and one or more through circuits (or multiple conductive through holes, not shown) penetrating the circuit control substrate 11, and the circuit control substrate 11 may be configured as a first silicon wafer substrate (silicon wafer) or any kind of relatively hard carrier substrate. In addition, each electrical conductive structure 12 of the circuit control module 1 may include at least a first conductive component 121 (e.g., a first conductive pin) and a second conductive component 122 (e.g., a second conductive pin) adjacent to each other, and the first conductive component 121 and the second conductive component 122 of each electrical conductive structure 12 may be electrically connected to the bottom line (not shown) or the through line (not shown) of the circuit control substrate 11, and the first conductive component 121 and the second conductive component 122 of each electrical conductive structure 12 may extend downward from the bottom of the circuit control substrate 11. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0027] Furthermore, with Figure 2 and Figure 3As shown, the flexible conductive structure 3 can be electrically connected between the circuit control module 1 and the electrical detection module 2, so that the electrical detection module 2 can be electrically connected to the circuit control module 1 through the flexible conductive structure 3. For example, the flexible conductive material layer 30 can be configured as any conductive rubber (Conductive Rubber), any conductive polymer or conductive polymer (Conductive Polymer), any anisotropic conductive paste (Anisotropic Conductive Paste, ACP), or can be configured as any anisotropic conductive film (Anisotropic Conductive Film, ACF), or any kind of flexible conductive material can be used, or any conductive material that can provide elasticity or flexibility. It is worth noting that the conductive rubber includes a plurality of embedded conductive gold wires or a plurality of embedded conductive materials corresponding to "a plurality of electrical conductive structures 12 (including a plurality of first conductive components 121 and a plurality of second conductive components 122)" or "a plurality of top conductive components 2310" respectively. However, the above example is only one of the feasible embodiments and is not intended to limit the present invention.

[0028] Furthermore, with Figure 3 and Figure 4As shown, multiple movable supporting substrates 21 can be separated from each other and jointly arranged on the flexible conductive material layer 30 after processing through a cutting step (or a material removal step), multiple electrical detection structures 22 can be respectively arranged on the multiple movable supporting substrates 21 and respectively electrically connected to the multiple electrical connection structures 23, and the multiple electrical connection structures 23 can respectively penetrate the multiple movable supporting substrates 21 and respectively be electrically connected to the multiple electrical conduction structures 12 through the flexible conductive material layer 30. For example, in one feasible embodiment, the movable supporting substrate 21 can be configured as a second silicon wafer substrate or any type of relatively hard supporting substrate, each electrical detection structure 22 can include at least a first electrical detection probe 221 (or a first power supply probe, or a first electrical contact probe, or a P-pole contact probe) and a second electrical detection probe 222 (or a second power supply probe, or a second electrical contact probe, or an N-pole contact probe), and each electrical connection structure 23 can include at least two conductive penetration layers 231 (such as two solid conductive pillars, two hollow conductive through holes or two through-silicon vias (TSV)) penetrating the movable supporting substrate 21, each conductive penetration layer 231 has a top conductive component 2310 (or a top conductive pin) at the top, and the bottom of each conductive penetration layer 231 is directly electrically contacted with the corresponding electrical detection structure 22. Thereby, Figure 4 As shown, when the circuit control module 1, the electrical detection module 2 and the flexible conductive structure 3 cooperate with each other to form a chip electrical detection device D, since the bottom end of each conductive penetration layer 231 can directly electrically contact the corresponding electrical detection structure 22, the first electrical detection probe 221 can pass through the corresponding conductive penetration layer 231, the flexible conductive material layer 30 and the corresponding first conductive component 121 in sequence to be electrically connected to the circuit control module 1, and the second electrical detection probe 222 can pass through the corresponding conductive penetration layer 231, the flexible conductive material layer 30 and the corresponding second conductive component 122 in sequence to be electrically connected to the circuit control module 1. For example, in one of the feasible embodiments, the first electrical detection probe 221 of the electrical detection structure 22 electrically connected to each other and the conductive penetration layer 231 of the electrical connection structure 23 can be an integrally formed or non-integrated conductive structure, and the second electrical detection probe 222 of the electrical detection structure 22 electrically connected to each other and the conductive penetration layer 231 of the electrical connection structure 23 can be an integrally formed or non-integrated conductive structure. However, the above example is only one feasible implementation example and is not intended to limit the present invention.

[0029] Furthermore, in one feasible embodiment, the first conductive element 121 and the second conductive element 122 of each electrically conductive structure 12 can directly and electrically contact the corresponding two top conductive elements 2310 (eg, Figure 4 As shown), or the first conductive component 121 and the second conductive component 122 of each electrically conductive structure 12 can be separated from the corresponding two top conductive components 2310 by a predetermined distance. It is worth noting that when the first conductive component 121 and the second conductive component 122 of each electrically conductive structure 12 are separated from the corresponding two top conductive components 2310 by a predetermined distance, the first conductive component 121 and the second conductive component 122 of each electrically conductive structure 12 can be electrically connected to the corresponding two top conductive components 2310 through the flexible conductive material layer 30. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0030] It is worth noting that Figure 4 As shown, since a plurality of movable supporting substrates 21 can be separated from each other by cutting and arranged on the bottom end of the flexible conductive material layer 30, each movable supporting substrate 21 can be configured to allow the flexible supporting of the flexible conductive material layer 30 or the flexible supporting (that is, the flexible conductive material layer 30 can be used as a flexible supporting substrate shared by a plurality of movable supporting substrates 21) to be in a state that allows the position to be slightly adjusted (for example, each movable supporting substrate 21 can be slightly adjusted or slightly moved in the horizontal direction, vertical direction or tilt direction), thereby allowing each electrical detection structure 22 to be configured to allow the position to be slightly adjusted along with the corresponding movable supporting substrate 21 (for example, the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 can be slightly adjusted or slightly moved in the horizontal direction, vertical direction or tilt direction at the same time). However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0031] For example, with Figure 5 and Figure 6 As shown, when the chip electrical property inspection device D (such as an LED spot test fixture) is configured to inspect a plurality of chips T to be inspected (such as a plurality of micro LED bare crystals or a plurality of mini LED bare crystals disposed on a gallium arsenide epitaxial wafer, or any type of unpackaged light-emitting grains), the chip electrical property inspection device D can be moved downward (such as by downward pressure from a flexible pressing device M (such as an air bag or any type of flexible pressing plate)). Figure 6As shown), the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 can respectively and truly electrically contact the two conductive pads T100 of the corresponding chip T to be detected (or can respectively and truly provide "constant current (or constant voltage)" to the two conductive pads T100 of the corresponding chip T to be detected). It is worth noting that, as Figure 6 As shown, even when the plurality of chips T to be tested are not in a completely flat state and the plurality of conductive pads T100 of the plurality of chips T to be tested cannot be located on the same horizontal plane (eg Figure 6 When the electrical detection structure 22 is on the imaginary line shown (or when the entire circuit substrate for carrying multiple chips T to be detected is warped), since each electrical detection structure 22 can be configured to allow the corresponding movable supporting substrate 21 to be in a state that allows the position to be slightly adjusted, the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 can respectively and truly electrically contact the two conductive pads T100 of the corresponding chip T to be detected (or can respectively provide "constant current (or constant voltage)" to the two conductive pads T100 of the corresponding chip T to be detected), so that multiple chips T to be detected can generate detection light sources through the electrical supply of multiple electrical detection structures 22 at the same time, so as to provide the optical detection device S with relevant optical detection (LED lighting test) of the multiple chips T to be detected. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0032] It is worth mentioning that, for example, Figure 5 or Figure 6 As shown, the circuit control substrate 11 of the circuit control module 1 can be configured to carry multiple functional chips C (such as control chips, memory chips or any type of semiconductor chips), and each functional chip C can be electrically connected to the corresponding electrical detection structure 22 through the corresponding electrical conduction structure 12, the flexible conductive material layer 30 and the corresponding electrical connection structure 23. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0033] Furthermore, with Figure 4 , Figure 5 and Figure 6As shown, the first embodiment of the present invention further provides a chip electrical detection device D, which includes a circuit control module 1, an electrical detection module 2 and a flexible conductive structure 3, and the circuit control module 1, the electrical detection module 2 and the flexible conductive structure 3 can cooperate with each other in any way to form a chip electrical detection device D. In addition, the circuit control module 1 includes a circuit control substrate 11 and a plurality of electrical conductive structures 12, the circuit control substrate 11 has a predetermined circuit layout, and the plurality of electrical conductive structures 12 can be arranged on the circuit control substrate 11 and electrically connected to the predetermined circuit layout of the circuit control substrate 11. In addition, the electrical detection module 2 includes a plurality of movable supporting substrates 21, a plurality of electrical detection structures 22 and a plurality of electrical connection structures 23, and the flexible conductive structure 3 includes at least a flexible conductive material layer 30. Further, the flexible conductive structure 3 can be connected between the circuit control module 1 and the electrical detection module 2, and the electrical detection module 2 can be electrically connected to the circuit control module 1 through the flexible conductive structure 3. In addition, a plurality of movable supporting substrates 21 may be separated from each other and disposed on the flexible conductive material layer 30, a plurality of electrical detection structures 22 may be disposed on the plurality of movable supporting substrates 21 and electrically connected to the plurality of electrical connection structures 23, respectively, and the plurality of electrical connection structures 23 may respectively penetrate the plurality of movable supporting substrates 21 and electrically connected to the plurality of electrical conduction structures 12 through the flexible conductive material layer 30. For example, since a plurality of movable supporting substrates 21 may be disposed on the bottom end of the flexible conductive material layer 30, each movable supporting substrate 21 may be configured to be in a state that allows slight position adjustment through the flexible support of the flexible conductive material layer 30, thereby allowing each electrical detection structure 22 to be in a state that allows slight position adjustment along with the corresponding movable supporting substrate 21. Furthermore, since each electrical detection structure 22 can be configured to allow the corresponding movable supporting substrate 21 to be in a state where the position can be slightly adjusted, the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 can respectively and truly electrically contact the two conductive pads T100 of the corresponding chip T to be detected (or can respectively and truly provide "constant current (or constant voltage)" to the two conductive pads T100 of the corresponding chip T to be detected) (such as Figure 6As shown). It is worth noting that when each electrical detection structure 22 can be configured to allow the corresponding movable supporting substrate 21 to be in a state where the position can be slightly adjusted, multiple electrical detection structures 22 can provide uniform pressing force to multiple chips T to be detected through the use of flexible conductive material layer 30, and can avoid damage to multiple chips T to be detected due to contact electrical detection (that is, it can avoid the situation where the chip T to be detected is broken due to electrical detection). However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0034] Second embodiment

[0035] See also Figure 7 As shown, the second embodiment of the present invention provides a chip electrical property detection device D, which includes a circuit control module 1, an electrical property detection module 2 and a flexible conductive structure 3. Figure 7 and Figure 3 It can be seen from the comparison that the main difference between the second embodiment of the present invention and the first embodiment is that in the second embodiment, each electrical connection structure 23 may include at least two conductive penetration layers 231 (for example, two solid conductive pillars, two hollow conductive through holes or two through-silicon vias (TSV)) and two conductive connection layers 232 (for example, two conductive circuit layers). More specifically, the two conductive penetration layers 231 may penetrate the corresponding movable supporting substrate 21, and the two conductive connection layers 232 may be arranged on the bottom end of the corresponding movable supporting substrate 21. The top end of each conductive penetration layer 231 has a top conductive component 2310 (or a top conductive pin), and the bottom end of each conductive penetration layer 231 may be directly electrically connected to or electrically contact the corresponding conductive connection layer 232.

[0036] Furthermore, if Fig.10 As shown, when the circuit control module 1, the electrical detection module 2 and the flexible conductive structure 3 cooperate with each other to form a chip electrical detection device D, the first electrical detection probe 221 can be electrically connected to the circuit control module 1 through the corresponding conductive connection layer 232, the corresponding conductive penetration layer 231, the flexible conductive material layer 30 and the corresponding first conductive component 121 in sequence, and the second electrical detection probe 222 can be electrically connected to the circuit control module 1 through the corresponding conductive connection layer 232, the corresponding conductive penetration layer 231, the flexible conductive material layer 30 and the corresponding second conductive component 122 in sequence. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0037] Thus, similar to the first embodiment, Figure 6As shown, since a plurality of movable supporting substrates 21 can be arranged on the bottom end of the flexible conductive material layer 30, each movable supporting substrate 21 can be configured to be in a state that allows slight adjustment of position through the flexible support of the flexible conductive material layer 30, thereby enabling each electrical detection structure 22 to be configured to be in a state that allows slight adjustment of position along with the corresponding movable supporting substrate 21. Furthermore, since each electrical detection structure 22 can be configured to be in a state that allows slight adjustment of position along with the corresponding movable supporting substrate 21, the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 can respectively and surely electrically contact the two conductive pads (not shown) of the corresponding chip to be detected (not shown).

[0038] Third embodiment

[0039] See also Figure 8 As shown, the third embodiment of the present invention provides a chip electrical property detection device D, which includes a circuit control module 1, an electrical property detection module 2 and a flexible conductive structure 3. Figure 8 and Figure 4 It can be seen from the comparison that the main difference between the third embodiment of the present invention and the first embodiment is that: in the third embodiment, each movable supporting substrate 21 can further include a first movable supporting plate 211 (the outer surrounding surface of the first movable supporting plate 211 can be a surrounding cutting surface or a surrounding roughened surface formed by cutting or material removal) and a second movable supporting plate 212 (the outer surrounding surface of the second movable supporting plate 212 can be a surrounding cutting surface or a surrounding roughened surface formed by cutting or material removal), which are separated from each other after processing through a cutting step (or a material removal step), and the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 can be respectively arranged on the first movable supporting plate 211 and the second movable supporting plate 212 of the corresponding movable supporting substrate 21.

[0040] By this, Figure 8As shown, since the first movable supporting plate 211 and the second movable supporting plate 212 of the plurality of movable supporting substrates 21 can be arranged on the bottom end of the flexible conductive material layer 30, the first movable supporting plate 211 and the second movable supporting plate 212 of each movable supporting substrate 21 can be configured to allow the flexible support of the flexible conductive material layer 30 to allow the position to be slightly adjusted, thereby allowing the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 to be respectively configured to allow the position to be slightly adjusted along with the first movable supporting plate 211 and the second movable supporting plate 212 of the corresponding movable supporting substrate 21. Furthermore, since the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 can be respectively configured to allow the positions to be slightly adjusted along with the first movable supporting plate 211 and the second movable supporting plate 212 of the corresponding movable supporting substrate 21, the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 can respectively and surely electrically contact the two conductive pads (not shown) of the corresponding chip to be detected (not shown).

[0041] Fourth embodiment

[0042] See also Figures 9 to 13 As shown, the fourth embodiment of the present invention provides a method for manufacturing a chip electrical property detection device, which at least comprises: first, Fig. 9 and Fig.10 As shown, a structural strengthening module 4 is provided, and the structural strengthening module 4 at least includes a structural strengthening substrate 40 (step S200); then, Fig. 9 and Fig.10 As shown, an electrical detection module 2 is provided, and the electrical detection module 2 includes a probe carrier substrate 20, a plurality of electrical detection structures 22 and a plurality of electrical connection structures 23 (step S202); then, Fig. 9 and Fig.10 As shown, a flexible buffer structure 5 is provided, and the flexible buffer structure 5 includes at least a flexible buffer material layer 50 (step S204); next, Fig. 9 , Fig.10 and Fig.11As shown, the structural reinforcement module 4, the electrical detection module 2 and the flexible buffer structure 5 cooperate with each other to form a chip electrical detection device D (step S206). Furthermore, the probe carrier substrate 20 can be set on the flexible buffer material layer 50, and the plurality of electrical detection structures 22 can be respectively set on the plurality of probe carrier substrates 20 and respectively electrically connected to the plurality of electrical connection structures 23. In addition, each electrical detection structure 22 includes a first electrical detection probe 221 (or a first power supply probe, or a first electrical contact probe, or a P-pole contact probe) and a second electrical detection probe 222 (or a second power supply probe, or a second electrical contact probe, or an N-pole contact probe). Therefore, with Fig.12 and Fig.13 As shown, the probe carrier substrate 20 can be configured to allow the flexible support of the flexible buffer material layer 50 to be in a state that allows the position to be slightly adjusted, thereby allowing the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 to be configured to allow the position to be slightly adjusted along with the probe carrier substrate 20.

[0043] For example, in one of the feasible embodiments, the structural reinforcement substrate 40 can be configured as a first silicon wafer substrate (silicon wafer) or any type of relatively hard supporting substrate, and the probe supporting substrate 20 can be configured as a second silicon wafer substrate (silicon wafer) or any type of relatively hard supporting substrate. In addition, the flexible buffer material layer 50 (or elastic material layer, or flexible material layer) can be configured as a prefabricated polymer material layer (or any type of polymer film material), and the polymer material layer can be silicone or epoxy resin. It is worth mentioning that when the structural reinforcement substrate 40 of the structural reinforcement module 4 is used as a circuit substrate according to different requirements, the circuit substrate can be configured to carry multiple functional chips (such as control chips, memory chips or any type of semiconductor chips). However, the above example is only one of the feasible embodiments and is not used to limit the present invention.

[0044] For example, with Fig.12 and Fig.13As shown, when the chip electrical property inspection device D (such as an LED spot test fixture) is configured to inspect a plurality of chips T to be inspected (such as a plurality of micro LED bare crystals or a plurality of mini LED bare crystals disposed on a gallium arsenide epitaxial wafer, or any type of unpackaged light-emitting grains), the chip electrical property inspection device D can be moved downward (such as by downward pressure from a flexible pressing device M (such as an air bag or any type of flexible pressing plate)). Fig.13 As shown), the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 can respectively and truly electrically contact the two conductive pads T100 of the corresponding chip T to be detected (or can respectively and truly provide "constant current (or constant voltage)" to the two conductive pads T100 of the corresponding chip T to be detected). It is worth noting that, as Fig.13 As shown, even when the plurality of chips T to be tested are not in a completely flat state and the plurality of conductive pads T100 of the plurality of chips T to be tested cannot be located on the same horizontal plane (eg Fig.13 When the electrical detection structure 22 is on the imaginary line shown (or when the entire circuit substrate for carrying multiple chips T to be detected is warped), since each electrical detection structure 22 can be configured to allow the position to be slightly adjusted along with the flexible buffer material layer 50, the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 can respectively and truly electrically contact the two conductive pads T100 of the corresponding chip T to be detected (or can respectively provide "constant current (or constant voltage)" to the two conductive pads T100 of the corresponding chip T to be detected), so that the multiple chips T to be detected can generate detection light sources through the electrical supply of the multiple electrical detection structures 22 at the same time, so as to provide the optical detection device S with relevant optical detection (LED lighting test) of the multiple chips T to be detected. It is worth noting that when each electrical detection structure 22 can be configured to allow the corresponding movable supporting substrate 21 to be in a state where the position can be slightly adjusted, multiple electrical detection structures 22 can provide uniform pressing force to multiple chips T to be detected through the use of flexible conductive material layer 30, and can avoid damage to multiple chips T to be detected due to contact electrical detection (that is, it can avoid the situation where the chip T to be detected is broken due to electrical detection). However, the above example is only one feasible embodiment and is not used to limit the present invention.

[0045] Furthermore, with Fig.11 , Fig.12 and Fig.13As shown, the fourth embodiment of the present invention further provides a chip electrical detection device D, which includes a structural reinforcement module 4, an electrical detection module 2 and a flexible buffer structure 5, and the structural reinforcement module 4, the electrical detection module 2 and the flexible buffer structure 5 can cooperate with each other in any way to form a chip electrical detection device D. In addition, the structural reinforcement module 4 includes a structural reinforcement substrate 40, the electrical detection module 2 includes a probe carrier substrate 20, a plurality of electrical detection structures 22 and a plurality of electrical connection structures 23, and the flexible buffer structure 5 includes a flexible buffer material layer 50. In addition, the probe carrier substrate 20 is disposed on the flexible buffer material layer 50, and the plurality of electrical detection structures 22 are disposed on the probe carrier substrate 20 and are electrically connected to the plurality of electrical connection structures 23, respectively. For example, since each electrical detection structure 22 can be configured to allow the flexible buffer material layer 50 to be in a state where the position can be slightly adjusted, the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 can respectively and truly electrically contact the two conductive pads T100 of the corresponding chip T to be detected, thereby allowing multiple chips T to be detected to generate detection light sources through the electrical supply of multiple electrical detection structures 22 at the same time, so as to provide the optical detection device S with relevant optical detection (LED lighting test) for the multiple chips T to be detected. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0046] Fifth embodiment

[0047] See also Fig.14 As shown, the fifth embodiment of the present invention provides a chip electrical property detection device D, which includes a structure reinforcement module 4, an electrical property detection module 2 and a flexible buffer structure 5. Fig.14 and Fig.11It can be seen from the comparison that the main difference between the fifth embodiment of the present invention and the fourth embodiment is that: in the fifth embodiment, the probe bearing substrate 20 may further include a plurality of movable bearing plates 200 separated from each other after processing by a cutting step (or a material removal step), and the plurality of movable bearing plates 200 are separated from each other and arranged on the flexible buffer material layer 50. Furthermore, the first electrical property detection probe 221 and the second electrical property detection probe 222 of each electrical property detection structure 22 may be respectively arranged on two corresponding movable bearing plates 200. In addition, two adjacent movable bearing plates 200 may be separated from each other by a predetermined distance, and the outer surrounding surface of each movable bearing plate 200 may be a surrounding cutting surface 2000 (or a surrounding roughened surface) formed by a cutting method (or a material removal method). Thus, since a plurality of movable supporting plates 200 can be separately arranged on the bottom end of the flexible buffer material layer 50, each movable supporting plate 200 can be configured to be in a state allowing slight position adjustment through the flexible support of the flexible buffer material layer 50, thereby allowing the first electrical detection probe 221 and the second electrical detection probe 222 of each electrical detection structure 22 to be configured to be in a state allowing slight position adjustment along with the flexible buffer material layer 50.

[0048] Advantageous Effects of Embodiments

[0049] One of the beneficial effects of the present invention is that the present invention provides a chip electrical detection device D, which can be realized by "the circuit control module 1 includes a circuit control substrate 11 and a plurality of electrical conduction structures 12", "the electrical detection module 2 includes a plurality of movable supporting substrates 21, a plurality of electrical detection structures 22 and a plurality of electrical connection structures 23", "the flexible conductive structure 3 includes a flexible conductive material layer 30", "the circuit control module 1, the electrical detection module 2 and the flexible conductive structure 3 cooperate with each other to form the chip electrical detection device D", "the plurality of movable supporting substrates 21 are separated from each other and arranged on the flexible conductive material layer 30", "the plurality of The electrical detection structures 22 are respectively arranged on multiple movable supporting substrates 21 and are respectively electrically connected to multiple electrical connection structures 23” and the technical solutions of “multiple electrical connection structures 23 respectively penetrate multiple movable supporting substrates 21 and are respectively electrically connected to multiple electrical conductive structures 12 through flexible conductive material layers 30” are adopted, so that each movable supporting substrate 21 can be configured to allow the flexible supporting of the flexible conductive material layer 30 to be in a state allowing slight adjustment of the position, whereby each electrical detection structure 22 can be configured to allow the corresponding movable supporting substrate 21 to be in a state allowing slight adjustment of the position.

[0050] One of the beneficial effects of the present invention is that the manufacturing method of a chip electrical detection device D provided by the present invention can be achieved by "providing a circuit control module 1, the circuit control module 1 includes a circuit control substrate 11 and a plurality of electrical conduction structures 12", "providing an electrical detection module 2, the electrical detection module 2 includes a plurality of movable supporting substrates 21, a plurality of electrical detection structures 22 and a plurality of electrical connection structures 23", "providing a flexible conductive structure 3, the flexible conductive structure 3 includes a flexible conductive material layer 30", "cooperating the circuit control module 1, the electrical detection module 2 and the flexible conductive structure 3 to form a chip electrical detection device D", "separating the plurality of movable supporting substrates 21 from each other The present invention provides a technical scheme of "a plurality of electrical detection structures 22 are respectively arranged on a plurality of movable supporting substrates 21 and are respectively electrically connected to a plurality of electrical connection structures 23" and "a plurality of electrical connection structures 23 respectively penetrate a plurality of movable supporting substrates 21 and are respectively electrically connected to a plurality of electrical conduction structures 12 through the flexible conductive material layer 30", so that each movable supporting substrate 21 can be configured to allow the flexible supporting of the flexible conductive material layer 30 to allow the position to be slightly adjusted, thereby each electrical detection structure 22 can be configured to allow the position to be slightly adjusted along with the corresponding movable supporting substrate 21.

[0051] One of the beneficial effects of the present invention is that a chip electrical detection device D provided by the present invention can be configured to allow the probe bearing substrate 20 to be in a state of allowing slight adjustment of position through the flexible bearing of the flexible buffer material layer 50, thereby each electrical detection structure 22 can be configured to allow the probe bearing substrate 20 to be in a state of allowing slight adjustment of position along with the probe bearing substrate 20 through the technical scheme of "the structural reinforcement module 4 includes a structural reinforcement substrate 40", "the electrical detection module 2 includes a probe bearing substrate 20, multiple electrical detection structures 22 and multiple electrical connection structures 23", whereby each electrical detection structure 22 can be configured to allow the probe bearing substrate 20 to be in a state of allowing slight adjustment of position along with the probe bearing substrate 20.

[0052] One of the beneficial effects of the present invention is that the manufacturing method of a chip electrical detection device provided by the present invention can be achieved through the technical solutions of "providing a structural reinforcement module 4, the structural reinforcement module 4 includes a structural reinforcement substrate 40", "providing an electrical detection module 2, the electrical detection module 2 includes a probe supporting substrate 20, multiple electrical detection structures 22 and multiple electrical connection structures 23", "providing a flexible buffer structure 5, the flexible buffer structure 5 includes a flexible buffer material layer 50", "cooperating the structural reinforcement module 4, the electrical detection module 2 and the flexible buffer structure 5 to form a chip electrical detection device D", "the probe supporting substrate 20 is arranged on the flexible buffer material layer 50" and "multiple electrical detection structures 22 are arranged on the probe supporting substrate 20 and are respectively electrically connected to the multiple electrical connection structures 23", so that the probe supporting substrate 20 can be configured to allow it to be in a state where it allows slight adjustment of its position through the flexible support of the flexible buffer material layer 50, whereby each electrical detection structure 22 can be configured to allow it to be in a state where it allows slight adjustment of its position along with the probe supporting substrate 20.

[0053] The contents disclosed above are only optional feasible embodiments of the present invention, and are not intended to limit the protection scope of the claims of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention description and drawings are included in the protection scope of the claims of the present invention.

Claims

1. A chip electrical property detection device, characterized in that: The chip electrical property detection device comprises: a structural strengthening module, the structural strengthening module comprising a structural strengthening substrate; An electrical detection module, comprising a probe carrier substrate, a plurality of electrical detection structures and a plurality of electrical connection structures; and a flexible buffer structure, the flexible buffer structure comprising a flexible buffer material layer; The structural reinforcement module, the electrical detection module and the flexible buffer structure cooperate with each other to form the chip electrical detection device; Wherein, the probe carrying substrate is arranged on the flexible buffer material layer, and the plurality of electrical detection structures are arranged on the probe carrying substrate and are electrically connected to the plurality of electrical connection structures respectively.

2. The chip electrical property detection device according to claim 1, characterized in that: in, Each of the electrical detection structures includes a first electrical detection probe and a second electrical detection probe; The probe carrier substrate is configured to allow the flexible support of the flexible buffer material layer to be in a state that allows slight adjustment of position, thereby allowing each electrical detection structure to be configured to be in a state that allows slight adjustment of position along with the probe carrier substrate.

3. The chip electrical property detection device according to claim 1, characterized in that: in, The structural reinforcement substrate of the structural reinforcement module is configured to carry a plurality of functional chips; Wherein, the flexible buffer material layer is configured as a prefabricated polymer material layer, and the prefabricated polymer material layer is silica gel or epoxy resin; Wherein, the structure strengthening substrate is configured as a first silicon wafer substrate, and the probe carrying substrate is configured as a second silicon wafer substrate.

4. The chip electrical property detection device according to claim 1, characterized in that: in, Each of the electrical detection structures includes a first electrical detection probe and a second electrical detection probe; When the chip electrical detection device is configured to detect multiple chips to be detected, the chip electrical detection device moves downward through the downward pressure of a flexible pressing device, so that the first electrical detection probe and the second electrical detection probe of each electrical detection structure are respectively electrically contacted with the two conductive pads of the corresponding chip to be detected.

5. The chip electrical property detection device according to claim 1, characterized in that: in, Each of the electrical detection structures includes a first electrical detection probe and a second electrical detection probe; Wherein, the probe bearing substrate comprises a plurality of movable bearing plates, and the plurality of movable bearing plates are separated from each other and arranged on the flexible buffer material layer; Wherein, the first electrical detection probe and the second electrical detection probe of each electrical detection structure are respectively arranged on the corresponding two movable supporting plates; Wherein, two adjacent movable supporting plates are separated from each other by a predetermined distance, and the outer surrounding surface of each movable supporting plate is a surrounding cutting surface formed by cutting; Among them, multiple movable supporting plates are separately arranged on the bottom end of the flexible buffer material layer, and each of the movable supporting plates is configured to allow the flexible support of the flexible buffer material layer to be in a state allowing slight adjustment of the position, thereby allowing each of the electrical detection structures to be in a state allowing slight adjustment of the position along with the flexible buffer material layer.

6. A method for manufacturing a chip electrical property detection device, characterized in that: The manufacturing method of the chip electrical property detection device comprises: A structural strengthening module is provided, wherein the structural strengthening module comprises a structural strengthening substrate; An electrical detection module is provided, the electrical detection module comprising a probe carrier substrate, a plurality of electrical detection structures and a plurality of electrical connection structures; Providing a flexible buffer structure, the flexible buffer structure comprising a flexible buffer material layer; and The structural reinforcement module, the electrical property detection module and the flexible buffer structure are matched with each other to form the chip electrical property detection device; Wherein, the probe carrying substrate is arranged on the flexible buffer material layer, and the plurality of electrical detection structures are respectively arranged on the plurality of probe carrying substrates and are respectively electrically connected to the plurality of electrical connection structures.

7. The method for manufacturing a chip electrical property detection device according to claim 6, characterized in that: in, Each of the electrical detection structures includes a first electrical detection probe and a second electrical detection probe; The probe carrier substrate is configured to allow the flexible support of the flexible buffer material layer to be in a state that allows slight adjustment of position, thereby allowing each electrical detection structure to be configured to be in a state that allows slight adjustment of position along with the probe carrier substrate.

8. The method for manufacturing a chip electrical property detection device according to claim 6, characterized in that: in, The structural reinforcement substrate of the structural reinforcement module is configured to carry a plurality of functional chips; Wherein, the flexible buffer material layer is configured as a prefabricated polymer material layer, and the prefabricated polymer material layer is silica gel or epoxy resin; Wherein, the structure strengthening substrate is configured as a first silicon wafer substrate, and the probe carrying substrate is configured as a second silicon wafer substrate.

9. The method for manufacturing a chip electrical property detection device according to claim 6, characterized in that: in, Each of the electrical detection structures includes a first electrical detection probe and a second electrical detection probe; When the chip electrical detection device is configured to detect multiple chips to be detected, the chip electrical detection device moves downward through the downward pressure of a flexible pressing device, so that the first electrical detection probe and the second electrical detection probe of each electrical detection structure are respectively electrically contacted with the two conductive pads of the corresponding chip to be detected.

10. The method for manufacturing a chip electrical property detection device according to claim 6, characterized in that: in, Each of the electrical detection structures includes a first electrical detection probe and a second electrical detection probe; Wherein, the probe bearing substrate comprises a plurality of movable bearing plates, and the plurality of movable bearing plates are separated from each other and arranged on the flexible buffer material layer; Wherein, the first electrical detection probe and the second electrical detection probe of each electrical detection structure are respectively arranged on the corresponding two movable supporting plates; Wherein, two adjacent movable supporting plates are separated from each other by a predetermined distance, and the outer surrounding surface of each movable supporting plate is a surrounding cutting surface formed by cutting; Among them, multiple movable supporting plates are separately arranged on the bottom end of the flexible buffer material layer, and each of the movable supporting plates is configured to allow the flexible support of the flexible buffer material layer to be in a state allowing slight adjustment of the position, thereby allowing each of the electrical detection structures to be in a state allowing slight adjustment of the position along with the flexible buffer material layer.

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