ICP reactor design method and device, electronic equipment and storage medium

Abstract

The invention belongs to the technical field of ICP reactor design, and discloses an ICP reactor design method and device, electronic equipment and a storage medium, and the method comprises the steps: obtaining an ICP reactor model corresponding to an ICP reactor, representing the shape of a reaction chamber of the ICP reactor by using a cubic Bezier curve, adding a material into the wall surface of the ICP reactor model, and setting corresponding material parameters, setting a physical field, configuring a corresponding optimization solver, solving a cubic Bezier curve by using the optimization solver according to the material parameters and the physical field, and calculating to obtain an optimal parameter combination of the shape of the reaction chamber, so that the electron density of the ICP reactor model at the outlet of the reaction chamber reaches the maximum value; according to the method, a cubic Bezier curve is solved by utilizing an optimization solver through a finite element method according to material parameters and a physical field, and an optimal parameter combination is obtained through calculation, so that the electron density at an outlet of a reaction chamber reaches the maximum value, the ICP reactor is optimally designed, and the design efficiency of the ICP reactor is improved.

Description

Technical Field

[0001] The present application relates to the technical field of ICP reactor design, and in particular to an ICP reactor design method, device, electronic device and storage medium. Background Art

[0002] Inductively Coupled Plasma (ICP) is a technology that uses an alternating magnetic field generated by high-frequency induced current to stimulate gas discharge in a plasma torch to generate plasma. ICP has the advantages of simple structure, convenient operation, high and uniform plasma density, and easy control. Therefore, it has been widely used in the fields of spectral analysis, material processing, micro-nano processing, etc.

[0003] Among them, the reaction chamber and the RF coil are the key parts of plasma generation. The movement of plasma can be regarded as a fluid on a macroscopic scale, with convection and diffusion phenomena. The shape of the reaction chamber determines the distribution of plasma flow velocity, which will affect the convection and diffusion of plasma. The position and distribution of the RF coil will affect the plasma generation position and the dissociation degree distribution. However, the existing methods have problems such as over-reliance on experience and inability to obtain theoretical optimal solutions when optimizing and improving the ICP reaction chamber and RF coil using experiments or based on experience.

[0004] Therefore, in order to solve the technical problems that the existing ICP reactor design method relies too much on experience when designing the reaction chamber outlet and cannot obtain the theoretical optimal solution to maximize the electron density at the reaction chamber outlet, an ICP reactor design method, device, electronic device and storage medium are urgently needed. Summary of the invention

[0005] The purpose of the present application is to provide an ICP reactor design method, device, electronic device and storage medium. By using the finite element method, according to material parameters and physical fields, an optimization solver is used to solve the cubic Bezier curve, and the optimal parameter combination of the reaction chamber shape is calculated to make the electron density of the ICP reactor model at the reaction chamber outlet reach a maximum value. The problem that the existing ICP reactor design method relies too much on experience when designing the reaction chamber outlet and cannot obtain a theoretical optimal solution to maximize the electron density at the reaction chamber outlet is solved. When designing the ICP reactor, the maximum value of the electron density of the ICP reactor model at the reaction chamber outlet can be calculated by the finite element method, and the optimal parameter combination representing the reaction chamber shape corresponding to the maximum value can be determined, thereby improving the design efficiency of the ICP reactor.

[0006] In a first aspect, the present application provides an ICP reactor design method, comprising: Obtaining an ICP reactor model corresponding to the ICP reactor; in the ICP reactor model, using a cubic Bezier curve to represent the shape of the reaction chamber of the ICP reactor; Adding material to the wall of the ICP reactor model and setting corresponding material parameters; Set up the physical field and configure the corresponding optimization solver; According to the material parameters and the physical field, the optimization solver is used to solve the cubic Bezier curve, and the optimal parameter combination of the reaction chamber shape is calculated to make the electron density of the ICP reactor model at the reaction chamber outlet reach a maximum value.

[0007] The ICP reactor design method provided in the present application can realize the optimized design of the ICP reactor. Through the finite element method, according to the material parameters and the physical field, the cubic Bezier curve is solved by using the optimization solver to calculate the optimal parameter combination of the reaction chamber shape, so that the electron density of the ICP reactor model at the reaction chamber outlet reaches the maximum value, which solves the problems of the existing ICP reactor design method that is too dependent on experience when designing the reaction chamber outlet and cannot obtain the theoretical optimal solution to maximize the electron density at the reaction chamber outlet. When designing the ICP reactor, the maximum value of the electron density of the ICP reactor model at the reaction chamber outlet can be calculated by the finite element method, and the optimal parameter combination representing the reaction chamber shape corresponding to the maximum value can be determined, thereby improving the design efficiency of the ICP reactor.

[0008] Optionally, obtaining an ICP reactor model corresponding to the ICP reactor includes: Obtain the initial model dimensions of the ICP reactor; Based on the initial model size, a cubic Bezier curve is used to represent the reaction chamber shape of the ICP reactor, and a coil model is generated on an offset curve of the cubic Bezier curve to construct an ICP reactor model.

[0009] Optionally, the cubic Bezier curve includes a first cubic Bezier curve representing an inlet of a reaction chamber of the ICP reactor and a second cubic Bezier curve representing an outlet of the reaction chamber of the ICP reactor.

[0010] Optionally, based on the initial model size, a reaction chamber shape of the ICP reactor is represented by a cubic Bezier curve, and a coil model is generated on an offset curve of the cubic Bezier curve to construct an ICP reactor model, including: generating a first cubic Bezier curve representing the entrance of the reaction chamber of the ICP reactor, and setting the corresponding first control point coordinates; generating a second cubic Bezier curve representing the outlet of the reaction chamber of the ICP reactor, and setting corresponding second control point coordinates; Summarizing the first cubic Bezier curve, the first control point coordinates, the second cubic Bezier curve and the second control point coordinates to obtain the cubic Bezier curve for representing the shape of the reaction chamber of the ICP reactor; generating an offset curve of the cubic Bezier curve, and generating a coil model on the offset curve; An ICP reactor model is constructed according to the initial model size, the cubic Bezier curve and the coil model.

[0011] The ICP reactor design method provided in the present application can realize the optimized design of the ICP reactor. By representing the first cubic Bezier curve at the inlet of the reaction chamber of the ICP reactor and the corresponding first control point coordinates, and representing the second cubic Bezier curve at the outlet of the reaction chamber of the ICP reactor and the corresponding second control point coordinates, combined with the initial model size, the ICP reactor is simulated and designed, which is beneficial to improving the design efficiency of the ICP reactor.

[0012] Optionally, the physical fields include laminar flow physics, thermal convection physics, electromagnetic wave physics and plasma physics.

[0013] Optionally, set up the physical field and configure the corresponding optimization solver, including: Determining the interior of the reaction chamber of the ICP reactor model as a plasma region; Setting the laminar flow physical field, the thermal convection physical field, the electromagnetic wave physical field and the plasma physical field in the plasma region, and setting corresponding boundary conditions; An optimization solver is configured within the plasma region.

[0014] The ICP reactor design method provided in the present application can realize the optimal design of the ICP reactor by setting the laminar flow physical field, thermal convection physical field, electromagnetic wave physical field and plasma physical field, setting the corresponding boundary conditions, and configuring the optimization solver. The optimization solver is used to simulate the design of the ICP reactor based on the laminar flow physical field, thermal convection physical field, electromagnetic wave physical field, plasma physical field and the corresponding boundary conditions, which is beneficial to improving the design efficiency of the ICP reactor.

[0015] Optionally, configuring an optimization solver in the plasma region includes: disposing a solver within the plasma region; The solver is optimized to obtain the optimized solver.

[0016] In a second aspect, the present application provides an ICP reactor design device, comprising: An acquisition module is used to acquire an ICP reactor model corresponding to the ICP reactor; in the ICP reactor model, a cubic Bezier curve is used to represent the reaction chamber shape of the ICP reactor; A setting module, used for adding materials to the wall surface of the ICP reactor model and setting corresponding material parameters; Configuration module, used to set up the physical field and configure the corresponding optimization solver; A calculation module is used to solve the cubic Bezier curve using the optimization solver according to the material parameters and the physical field, and calculate the optimal parameter combination of the reaction chamber shape so that the electron density of the ICP reactor model at the reaction chamber outlet reaches a maximum value.

[0017] The ICP reactor design device uses a finite element method to solve a cubic Bezier curve according to material parameters and a physical field, and calculates the optimal parameter combination of the reaction chamber shape, so that the electron density of the ICP reactor model at the reaction chamber outlet reaches a maximum value, and solves the problem that the existing ICP reactor design method is too dependent on experience when designing the reaction chamber outlet and cannot obtain a theoretical optimal solution to maximize the electron density at the reaction chamber outlet. When designing the ICP reactor, the maximum value of the electron density of the ICP reactor model at the reaction chamber outlet can be calculated by the finite element method, and the optimal parameter combination representing the reaction chamber shape corresponding to the maximum value is determined, thereby improving the design efficiency of the ICP reactor.

[0018] In a third aspect, the present application provides an electronic device, comprising a processor and a memory, wherein the memory stores a computer program executable by the processor, and when the processor executes the computer program, it runs the steps in the ICP reactor design method described above.

[0019] In a fourth aspect, the present application provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the steps in the ICP reactor design method described above are executed.

[0020] Beneficial effects: The ICP reactor design method, device, electronic device and storage medium provided in the present application use the finite element method, according to material parameters and physical fields, to solve the cubic Bezier curve using an optimization solver, and calculate the optimal parameter combination of the reaction chamber shape, so that the electron density of the ICP reactor model at the reaction chamber outlet reaches a maximum value, thereby solving the problem that the existing ICP reactor design method relies too much on experience when designing the reaction chamber outlet and cannot obtain the theoretical optimal solution to maximize the electron density at the reaction chamber outlet. When designing the ICP reactor, the finite element method can be used to calculate the maximum value of the electron density of the ICP reactor model at the reaction chamber outlet, and the optimal parameter combination representing the reaction chamber shape corresponding to the maximum value can be determined, thereby improving the design efficiency of the ICP reactor. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 Flow chart of the ICP reactor design method provided in the embodiment of the present application.

[0022] Figure 2 This is a schematic diagram of the structure of the ICP reactor design device provided in the embodiment of the present application.

[0023] Figure 3 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application.

[0024] Figure 4 This is a schematic diagram of the structure of the ICP reactor model provided in the embodiments of the present application.

[0025] Explanation of reference numerals: 1. Acquisition module; 2. Setting module; 3. Configuration module; 4. Calculation module; 301. Processor; 302. Memory; 303. Communication bus. DETAILED DESCRIPTION

[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0027] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0028] Please refer to Figure 1 , Figure 1 It is an ICP reactor design method in some embodiments of the present application, which is used to optimize the design of the ICP reactor, comprising the steps of: Step S101, obtaining an ICP reactor model corresponding to the ICP reactor; in the ICP reactor model, a cubic Bezier curve is used to represent the shape of the reaction chamber of the ICP reactor; Step S102, adding materials to the wall of the ICP reactor model and setting corresponding material parameters; Step S103, setting the physical field and configuring the corresponding optimization solver; Step S104, using an optimization solver to solve the cubic Bezier curve, calculate the optimal parameter combination of the reaction chamber shape, so that the electron density of the ICP reactor model at the reaction chamber outlet reaches a maximum value.

[0029] The ICP reactor design method uses a finite element method, according to material parameters and physical fields, to solve a cubic Bezier curve using an optimization solver, and calculates the optimal parameter combination of the reaction chamber shape, so that the electron density of the ICP reactor model at the reaction chamber outlet reaches a maximum value, thereby solving the problem that the existing ICP reactor design method relies too much on experience when designing the reaction chamber outlet and cannot obtain a theoretical optimal solution to maximize the electron density at the reaction chamber outlet. When designing the ICP reactor, the maximum value of the electron density of the ICP reactor model at the reaction chamber outlet can be calculated by the finite element method, and the optimal parameter combination representing the reaction chamber shape corresponding to the maximum value can be determined, thereby improving the design efficiency of the ICP reactor.

[0030] Specifically, in step S101, obtaining an ICP reactor model corresponding to the ICP reactor includes: Obtain the initial model dimensions of the ICP reactor; Based on the initial model size, a cubic Bezier curve is used to represent the reaction chamber shape of the ICP reactor, and a coil model is generated on the offset curve corresponding to the cubic Bezier curve to construct the ICP reactor model.

[0031] In step S101, in the simulation software or modeling software, the initial model size of the ICP reactor (the initial model size refers to the reference size used when creating or designing the model) is used to perform 2D axisymmetric modeling in a rectangular overall domain, and the reaction chamber shape of the ICP reactor is represented by a cubic Bezier curve to obtain an ICP reactor model. The initial model size is the default size set in the simulation software, including the size of the reaction chamber, coil (RF coil), working gas inlet and plasma outlet of the ICP reactor; the length of the rectangular overall domain is R (0.1m), the height is L (0.16m), and the reference is the origin (0,0).

[0032] like Figure 4 As shown, Figure 4 The schematic diagram of the ICP reactor model is shown in Figure 1, where area a is the reaction chamber, circle b is the coil, c is the working gas inlet, d is the plasma outlet, line segment e is the symmetry axis, area f is the external air domain, box g is the rectangular overall domain, and the arrow is the fluid direction (the direction of movement of the working gas or plasma). Figure 4 It can be seen that the height L of the rectangular overall domain is essentially the distance between the plasma outlet and the working gas inlet.

[0033] Specifically, the cubic Bezier curve includes a first cubic Bezier curve representing the inlet of the reaction chamber of the ICP reactor (working gas inlet) and a second cubic Bezier curve representing the outlet of the reaction chamber of the ICP reactor (plasma outlet); wherein the cubic Bezier curve is defined by four control points: a starting point P0, two control points P1 and P2, and an end point P3. Any point B(t) on the cubic Bezier curve can be obtained by the cubic Bezier curve calculation formula: B(t)=P0(1-t) 3 +3P1t(1-t) 2 +3P2t 2 (1-t)+P3t 3 ; Among them, B(t) is any point on the cubic Bezier curve; t is a parameter, t represents the fraction of the line segment distance between one control point and another control point, and the value range of t is [0,1]; P0 is the starting point of the cubic Bezier curve; P1 is the first control point; P2 is the second control point; P3 is the end point of the cubic Bezier curve.

[0034] Specifically, in step S101, based on the initial model size, a cubic Bezier curve is used to represent the reaction chamber shape of the ICP reactor, and a coil model is generated on an offset curve corresponding to the cubic Bezier curve to construct an ICP reactor model, including: Generate a first cubic Bezier curve representing the entrance of the reaction chamber of the ICP reactor, and set the corresponding first control point coordinates; Generate a second cubic Bezier curve representing the outlet of the reaction chamber of the ICP reactor, and set the corresponding second control point coordinates; Summarizing the first cubic Bezier curve, the first control point coordinates, the second cubic Bezier curve and the second control point coordinates to obtain a cubic Bezier curve for representing the shape of the reaction chamber of the ICP reactor; Generate an offset curve of a cubic Bezier curve, and generate a coil model on the offset curve; According to the initial model size, cubic Bezier curve and coil model, the ICP reactor model was constructed.

[0035] In step S101, the first cubic Bezier curve at the entrance is generated by the above cubic Bezier curve calculation formula, and four corresponding control points are set. The coordinates corresponding to the four control points (the first control point coordinates) are the starting point (r i ,0), control point (r i ,0.5l1), control point (r1,0.5l1) and end point (r1,l1), where r i is the entrance radius, r1 and l1 are the control variables.

[0036] The second cubic Bezier curve at the exit is generated by the above cubic Bezier curve calculation formula, and the corresponding four control points are set. The coordinates of the four control points (the coordinates of the second control points) are the starting point (r2, L-l2), the control point (r2, L-0.5l2), the control point (r o ,L- l2), end point (r o ,L), where r0 is the outlet radius, r2 and l2 are control variables, and L is the height of the rectangular overall domain.

[0037] The end point of the first cubic Bezier curve is connected to the starting point of the second cubic Bezier curve to summarize the first cubic Bezier curve, the first control point coordinates, the second cubic Bezier curve and the second control point coordinates to obtain a cubic Bezier curve for representing the reaction chamber shape of the ICP reactor.

[0038] On the side away from the axis of symmetry, an offset curve of the cubic Bezier curve is generated (the offset distance is d r ), add four points with a radius of r on the side of the offset curve away from the symmetry axis. e The four circles are coil models, and the center coordinates of the four circles are (r1+r e +d r +d err ,l1)、(0.66r1+re +0.33r2+d r +d err ,0.66l1+0.33(L-l2)), (0.33r1+re+0.66r2+d r + d err ,0.33l1+0.66(L-l2)) and (r2+r e +d r + d err ,L-l2), where d r is the offset distance, r e is the coil radius, d err is the coil parameter distance, offset distance d r , coil radius r e Distance d from coil parameter err It can be set according to actual needs. r Generally, it is set to 0.003m, r e Generally set to 0.004m, d err It is generally set to 0.002m.

[0039] After the coil model is generated, the ICP reactor model can be meshed according to actual needs.

[0040] In summary, the ICP reactor model is constructed based on the initial model size, cubic Bezier curve and coil model. i is 0.01m, set r o Set r1 to 0.01m, r1 to 0.03m, l1 to 0.05m, r2 to 0.03m, and l2 to 0.05m. In the subsequent simulation, the values ​​of r1, l1, r2 and l2 will be adjusted to make the electron density of the ICP reactor model at the outlet of the reaction chamber reach the maximum value.

[0041] Specifically, in step S102, materials are added to the wall of the ICP reactor model and corresponding material parameters are set, wherein the material parameters include relative permittivity, relative magnetic permeability and electrical conductivity. The material of the coil can be set according to actual needs.

[0042] Specifically, the physical field includes laminar flow physical field, thermal convection physical field, electromagnetic wave physical field and plasma physical field; in step S103, the physical field is set and the corresponding optimization solver is configured, including: The interior of the reaction chamber of the ICP reactor model is determined as the plasma region; Setting up laminar flow physics field, thermal convection physics field, electromagnetic wave physics field and plasma physics field in the plasma region, and setting up corresponding boundary conditions; Configure the optimization solver in the plasma region.

[0043] In step S103, the interior of the reaction chamber of the ICP reactor model is determined as a plasma region, and laminar flow physical field, thermal convection physical field, electromagnetic wave physical field and plasma physical field are set in the plasma region, and corresponding boundary conditions are set.

[0044] Among them, the plasma physics field is set, that is, a field suitable for plasma (i.e., plasma physics field) is added to the plasma region, electric field migration and convection are used as transfer settings, thermodynamic properties are calculated, and the input velocity of the ICP reactor model selects the velocity field, and the temperature selects the temperature field. Reaction formulas are added according to the domain reactions and boundary reactions that occur during the ionization process of the working gas used and the substances involved, and boundary conditions for electron export and substance outflow are set at the exit.

[0045] Set the laminar flow physical field, that is, select the plasma region as the fluid region, set the ICP reactor model to compressible flow, where the Mach number is less than 0.3 and the reference pressure level is 1 torr. According to the setting of the self-plasma physical field, configure the corresponding fluid property density and dynamic viscosity, set the inner wall of the reaction chamber to a no-slip wall, add an axisymmetric boundary condition to the central symmetry axis of the ICP reactor model, set the mass and flow rate of the inlet plasma as needed, and add 0 pressure as the outlet boundary condition.

[0046] Set the thermal convection physical field, that is, select the plasma area as the thermal field area. The thermal convection velocity field in the thermal field area comes from the fluid calculation of the laminar flow physical field. According to the setting of the self-plasma physical field, the corresponding thermal conductivity, density, constant pressure heat capacity and gas heat source are configured, and the "outflow" boundary condition is added to the plasma outlet.

[0047] Set up the electromagnetic wave physical field, that is, set up the magnetic field domain in the area of ​​the entire ICP reactor model, add the "coil" boundary condition, set the coil wire to a single wire, select the coil group, set the coil excitation mode to power, and set the power according to demand, generally set to 800w.

[0048] In summary, while setting the laminar flow physics field, thermal convection physics field, electromagnetic wave physics field and plasma physics field, the corresponding boundary conditions are also set, wherein the specific parameters in the physical field can be set according to actual needs.

[0049] Specifically, in step S103, configuring an optimization solver in the plasma region includes: configuring the solver within the plasma region; The solver is optimized to obtain an optimized solver.

[0050] In step S103, after setting the physical field, a solver is configured for each physical field, and the solver output time step can be set as needed, which is set to 10^{range(-8,0.4,-2)} and the frequency is 13.56MHz. Among them, a steady-state solver can be set for the laminar flow physical field, and a frequency domain-transient solver can be set for other physical fields.

[0051] In some embodiments, after configuring the solver, the simulation results are calculated and observed to see whether they are within a preset reasonable range. If the simulation results are within the preset reasonable range, the solver is optimized. If the simulation results are not within the preset reasonable range, the specific parameters of the physical field or the settings of the solver are reselected to calculate whether the reselected simulation results are within the preset reasonable range.

[0052] In the simulation software or modeling software, use the software's built-in optimization method (generally the "BOBYQA" optimization method), optimize the configured solver, set the optimization tolerance to 0.01, and use the boundary probe as the objective function (the boundary probe is used to spatially integrate and average the electron density on the export boundary, and its expression is "plas.ne". The integrated average value of the boundary probe will be used as the optimization target in the optimization step, and the expression of the optimization target can also be changed as needed), the type is maximized, and set upper and lower bounds and constraints for the control variables r1, l1, r2, and l2, specifically: ; ; ; ; In summary, the solver is optimized to obtain an optimized solver.

[0053] Specifically, in step S104, through simulation software or modeling software, using the simulation settings of the software, according to the material parameters and the physical field, the optimization solver is used to solve the cubic Bezier curve, and the optimal parameter combination of the reaction chamber shape is calculated, that is, the specific values ​​of the control variables r1, l1, r2, and l2 are calculated, so that the electron density of the ICP reactor model at the outlet of the reaction chamber reaches the maximum value, which is used to design the ICP reactor by combining the specific values ​​of the control variables r1, l1, r2, and l2 with the corresponding material parameters, so that the designed ICP reactor has a higher electron utilization rate. Among them, the optimal parameter combination of the reaction chamber shape is calculated using an existing calculation method or automatically calculated by the simulation software or modeling software.

[0054] As can be seen from the above, the ICP reactor design method obtains the ICP reactor model corresponding to the ICP reactor, uses the cubic Bezier curve to represent the reaction chamber shape of the ICP reactor, adds materials to the wall of the ICP reactor model and sets the corresponding material parameters, sets the physical field, and configures the corresponding optimization solver. According to the material parameters and the physical field, the cubic Bezier curve is solved by the optimization solver, and the optimal parameter combination of the reaction chamber shape is calculated, so that the electron density of the ICP reactor model at the reaction chamber outlet reaches the maximum value; thus, the finite element method is used to solve the cubic Bezier curve according to the material parameters and the physical field, and the optimal parameter combination of the reaction chamber shape is calculated, so that the electron density of the ICP reactor model at the reaction chamber outlet reaches the maximum value, which solves the problem that the existing ICP reactor design method relies too much on experience when designing the reaction chamber outlet and cannot obtain the theoretical optimal solution to maximize the electron density at the reaction chamber outlet. When designing the ICP reactor, the maximum value of the electron density of the ICP reactor model at the reaction chamber outlet can be calculated by the finite element method, and the optimal parameter combination corresponding to the maximum value representing the reaction chamber shape can be determined, thereby improving the design efficiency of the ICP reactor.

[0055] refer to Figure 2 The present application provides an ICP reactor design device for optimizing the design of an ICP reactor, comprising: The acquisition module 1 is used to acquire an ICP reactor model corresponding to the ICP reactor; in the ICP reactor model, a cubic Bezier curve is used to represent the reaction chamber shape of the ICP reactor; Setting module 2, used to add materials to the wall of the ICP reactor model and set corresponding material parameters; Configuration module 3, used to set up the physical field and configure the corresponding optimization solver; The calculation module 4 is used to solve the cubic Bezier curve using an optimization solver to calculate the optimal parameter combination of the reaction chamber shape so that the electron density of the ICP reactor model at the reaction chamber outlet reaches a maximum value.

[0056] The ICP reactor design device uses a finite element method to solve a cubic Bezier curve according to material parameters and a physical field, and calculates the optimal parameter combination of the reaction chamber shape, so that the electron density of the ICP reactor model at the reaction chamber outlet reaches a maximum value, and solves the problem that the existing ICP reactor design method is too dependent on experience when designing the reaction chamber outlet and cannot obtain a theoretical optimal solution to maximize the electron density at the reaction chamber outlet. When designing the ICP reactor, the maximum value of the electron density of the ICP reactor model at the reaction chamber outlet can be calculated by the finite element method, and the optimal parameter combination representing the reaction chamber shape corresponding to the maximum value is determined, thereby improving the design efficiency of the ICP reactor.

[0057] Specifically, when acquiring the ICP reactor model corresponding to the ICP reactor, the acquisition module 1 executes: Obtain the initial model dimensions of the ICP reactor; Based on the initial model size, a cubic Bezier curve is used to represent the reaction chamber shape of the ICP reactor, and a coil model is generated on the offset curve corresponding to the cubic Bezier curve to construct the ICP reactor model.

[0058] When the acquisition module 1 is executed, in the simulation software or modeling software, the initial model size of the ICP reactor (the initial model size refers to the reference size used when creating or designing the model) is used to perform 2D axisymmetric modeling in a rectangular overall domain to obtain the ICP reactor model. The initial model size is the size set by default in the simulation software, including the size of the reaction chamber, coil (RF coil), working gas inlet and plasma outlet of the ICP reactor; the length of the rectangular overall domain is R (0.1m), the height is L (0.16m), and the reference is the origin (0,0).

[0059] like Figure 4 As shown, Figure 4 The schematic diagram of the ICP reactor model is shown in Figure 1, where area a is the reaction chamber, circle b is the coil, c is the working gas inlet, d is the plasma outlet, line segment e is the symmetry axis, area f is the external air domain, box g is the rectangular overall domain, and the arrow is the fluid direction (the direction of movement of the working gas or plasma). Figure 4 It can be seen that the height L of the rectangular overall domain is essentially the distance between the plasma outlet and the working gas inlet.

[0060] Specifically, the cubic Bezier curve includes a first cubic Bezier curve representing the inlet of the reaction chamber of the ICP reactor (working gas inlet) and a second cubic Bezier curve representing the outlet of the reaction chamber of the ICP reactor (plasma outlet); wherein the cubic Bezier curve is defined by four control points: a starting point P0, two control points P1 and P2, and an end point P3. Any point B(t) on the cubic Bezier curve can be obtained by the cubic Bezier curve calculation formula: B(t)=P0(1-t) 3 +3P1t(1-t) 2 +3P2t 2 (1-t)+P3t 3 ; Among them, B(t) is any point on the cubic Bezier curve; t is a parameter, t represents the fraction of the line segment distance between one control point and another control point, and the value range of t is [0,1]; P0 is the starting point of the cubic Bezier curve; P1 is the first control point; P2 is the second control point; P3 is the end point of the cubic Bezier curve.

[0061] Specifically, when the acquisition module 1 represents the reaction chamber shape of the ICP reactor based on the initial model size using a cubic Bezier curve and generates a coil model on an offset curve corresponding to the cubic Bezier curve to construct the ICP reactor model, the following is performed: Generate a first cubic Bezier curve representing the entrance of the reaction chamber of the ICP reactor, and set the corresponding first control point coordinates; Generate a second cubic Bezier curve representing the outlet of the reaction chamber of the ICP reactor, and set the corresponding second control point coordinates; Summarizing the first cubic Bezier curve, the first control point coordinates, the second cubic Bezier curve and the second control point coordinates to obtain a cubic Bezier curve for representing the shape of the reaction chamber of the ICP reactor; Generate an offset curve of a cubic Bezier curve, and generate a coil model on the offset curve; According to the initial model size, cubic Bezier curve and coil model, the ICP reactor model was constructed.

[0062] When the acquisition module 1 is executed, the first cubic Bezier curve at the entrance is generated by the above cubic Bezier curve calculation formula, and the corresponding four control points are set. The coordinates corresponding to the four control points (the coordinates of the first control point) are the starting point (r i ,0), control point (r i ,0.5l1), control point (r1,0.5l1) and end point (r1,l1), where r i is the entrance radius, r1 and l1 are the control variables.

[0063] The second cubic Bezier curve at the exit is generated by the above cubic Bezier curve calculation formula, and the corresponding four control points are set. The coordinates of the four control points (the coordinates of the second control points) are the starting point (r2, L-l2), the control point (r2, L-0.5l2), the control point (r o ,L- l2), end point (r o ,L), where r0 is the outlet radius, r2 and l2 are control variables, and L is the height of the rectangular overall domain.

[0064] The end point of the first cubic Bezier curve is connected to the starting point of the second cubic Bezier curve to summarize the first cubic Bezier curve, the first control point coordinates, the second cubic Bezier curve and the second control point coordinates to obtain a cubic Bezier curve for representing the reaction chamber shape of the ICP reactor.

[0065] On the side away from the axis of symmetry, an offset curve of the cubic Bezier curve is generated (the offset distance is d r ), add four points with a radius of r on the side of the offset curve away from the symmetry axis. e The four circles are coil models, and the center coordinates of the four circles are (r1+r e +d r +d err ,l1)、(0.66r1+r e +0.33r2+d r +d err ,0.66l1+0.33(L-l2)), (0.33r1+re+0.66r2+d r + d err ,0.33l1+0.66(L-l2)) and (r2+r e +d r + d err ,L-l2), where d r is the offset distance, r e is the coil radius, d err is the coil parameter distance, offset distance d r , coil radius r e Distance d from coil parameter err It can be set according to actual needs. r Generally, it is set to 0.003m, r e Generally set to 0.004m, d err It is generally set to 0.002m.

[0066] After the coil model is generated, the ICP reactor model can be meshed according to actual needs.

[0067] In summary, the ICP reactor model is constructed based on the initial model size, cubic Bezier curve and coil model. i is 0.01m, set r o Set r1 to 0.01m, r1 to 0.03m, l1 to 0.05m, r2 to 0.03m, and l2 to 0.05m. In the subsequent simulation, the values ​​of r1, l1, r2 and l2 will be adjusted to make the electron density of the ICP reactor model at the outlet of the reaction chamber reach the maximum value.

[0068] Specifically, when the setting module 2 is executed, materials are added to the wall of the ICP reactor model and corresponding material parameters are set, wherein the material parameters include relative permittivity, relative magnetic permeability and electrical conductivity. The material of the coil can be set according to actual needs.

[0069] Specifically, the physical field includes laminar flow physical field, thermal convection physical field, electromagnetic wave physical field and plasma physical field; when the configuration module 3 sets the physical field and configures the corresponding optimization solver, it executes: The interior of the reaction chamber of the ICP reactor model is determined as the plasma region; Setting up laminar flow physics field, thermal convection physics field, electromagnetic wave physics field and plasma physics field in the plasma region, and setting up corresponding boundary conditions; Configure the optimization solver in the plasma region.

[0070] When the configuration module 3 is executed, the inside of the reaction chamber of the ICP reactor model is determined as a plasma region, and laminar flow physical field, thermal convection physical field, electromagnetic wave physical field and plasma physical field are set in the plasma region, and corresponding boundary conditions are set.

[0071] Among them, the plasma physics field is set, that is, a field suitable for plasma (i.e., plasma physics field) is added to the plasma region, electric field migration and convection are used as transfer settings, thermodynamic properties are calculated, and the input velocity of the ICP reactor model selects the velocity field, and the temperature selects the temperature field. Reaction formulas are added according to the domain reactions and boundary reactions that occur during the ionization process of the working gas used and the substances involved, and boundary conditions for electron export and substance outflow are set at the exit.

[0072] Set the laminar flow physical field, that is, select the plasma region as the fluid region, set the ICP reactor model to compressible flow, where the Mach number is less than 0.3 and the reference pressure level is 1 torr. According to the setting of the self-plasma physical field, configure the corresponding fluid property density and dynamic viscosity, set the inner wall of the reaction chamber to a no-slip wall, add an axisymmetric boundary condition to the central symmetry axis of the ICP reactor model, set the mass and flow rate of the inlet plasma as needed, and add 0 pressure as the outlet boundary condition.

[0073] Set the thermal convection physical field, that is, select the plasma area as the thermal field area. The thermal convection velocity field in the thermal field area comes from the fluid calculation of the laminar flow physical field. According to the setting of the self-plasma physical field, the corresponding thermal conductivity, density, constant pressure heat capacity and gas heat source are configured, and the "outflow" boundary condition is added to the plasma outlet.

[0074] Set up the electromagnetic wave physical field, that is, set up the magnetic field domain in the area of ​​the entire ICP reactor model, add the "coil" boundary condition, set the coil wire to a single wire, select the coil group, set the coil excitation mode to power, and set the power according to demand, generally set to 800w.

[0075] In summary, while setting the laminar flow physics field, thermal convection physics field, electromagnetic wave physics field and plasma physics field, the corresponding boundary conditions are also set, wherein the specific parameters in the physical field can be set according to actual needs.

[0076] Specifically, when configuring the optimization solver in the plasma region, the configuration module 3 executes: configuring the solver within the plasma region; The solver is optimized to obtain an optimized solver.

[0077] When configuration module 3 is executed, after setting the physical field, a solver is configured for each physical field. The solver output time step can be set as needed. Here it is set to 10^{range(-8,0.4,-2)} and the frequency is 13.56MHz. Among them, the laminar flow physical field can be set with a steady-state solver, and other physical fields can be set with a frequency domain-transient solver.

[0078] In some embodiments, after configuring the solver, the simulation results are calculated and observed to see whether they are within a preset reasonable range. If the simulation results are within the preset reasonable range, the solver is optimized. If the simulation results are not within the preset reasonable range, the specific parameters of the physical field or the settings of the solver are reselected to calculate whether the reselected simulation results are within the preset reasonable range.

[0079] In the simulation software or modeling software, use the software's built-in optimization method (generally the "BOBYQA" optimization method), optimize the configured solver, set the optimization tolerance to 0.01, and use the boundary probe as the objective function (the boundary probe is used to spatially integrate and average the electron density on the export boundary, and its expression is "plas.ne". The integrated average value of the boundary probe will be used as the optimization target in the optimization step, and the expression of the optimization target can also be changed as needed), the type is maximized, and set upper and lower bounds and constraints for the control variables r1, l1, r2, and l2, specifically: ; ; ; ; In summary, the solver is optimized to obtain an optimized solver.

[0080] Specifically, when the calculation module 4 is executed, the simulation software or modeling software is used to use the simulation settings of the software, and according to the material parameters and the physical field, the optimization solver is used to solve the cubic Bezier curve to calculate the optimal parameter combination of the reaction chamber shape, that is, the specific values ​​of the control variables r1, l1, r2, and l2 are calculated, so that the electron density of the ICP reactor model at the outlet of the reaction chamber reaches the maximum value, which is used to design the ICP reactor by combining the specific values ​​of the control variables r1, l1, r2, and l2 with the corresponding material parameters, so that the designed ICP reactor has a higher electron utilization rate. Among them, the optimal parameter combination of the reaction chamber shape is calculated using an existing calculation method or automatically calculated by the simulation software or modeling software.

[0081] As can be seen from the above, the ICP reactor design device obtains the ICP reactor model corresponding to the ICP reactor, uses the cubic Bezier curve to represent the reaction chamber shape of the ICP reactor, adds materials to the wall of the ICP reactor model and sets the corresponding material parameters, sets the physical field, and configures the corresponding optimization solver. According to the material parameters and the physical field, the cubic Bezier curve is solved by the optimization solver, and the optimal parameter combination of the reaction chamber shape is calculated, so that the electron density of the ICP reactor model at the reaction chamber outlet reaches the maximum value; thus, the finite element method is used to solve the cubic Bezier curve according to the material parameters and the physical field, and the optimal parameter combination of the reaction chamber shape is calculated, so that the electron density of the ICP reactor model at the reaction chamber outlet reaches the maximum value, which solves the problem that the existing ICP reactor design method is too dependent on experience when designing the reaction chamber outlet and cannot obtain the theoretical optimal solution to maximize the electron density at the reaction chamber outlet. When designing the ICP reactor, the maximum value of the electron density of the ICP reactor model at the reaction chamber outlet can be calculated by the finite element method, and the optimal parameter combination corresponding to the maximum value representing the reaction chamber shape can be determined, thereby improving the design efficiency of the ICP reactor.

[0082] Please refer to Figure 3 , Figure 3 A structural schematic diagram of an electronic device provided in an embodiment of the present application, the present application provides an electronic device, including: a processor 301 and a memory 302, the processor 301 and the memory 302 are interconnected and communicate with each other through a communication bus 303 and / or other forms of connection mechanisms (not shown), the memory 302 stores a computer program executable by the processor 301, and when the electronic device is running, the processor 301 executes the computer program to execute the ICP reactor design method in any optional implementation of the above embodiment to achieve the following functions: obtaining an ICP reactor model corresponding to the ICP reactor, using a cubic Bezier curve to represent the reaction chamber shape of the ICP reactor, adding materials to the wall of the ICP reactor model and setting corresponding material parameters, setting a physical field, and configuring a corresponding optimization solver, according to the material parameters and the physical field, using the optimization solver to solve the cubic Bezier curve, and calculating the optimal parameter combination of the reaction chamber shape, so that the electron density of the ICP reactor model at the reaction chamber outlet reaches the maximum value.

[0083] An embodiment of the present application provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the ICP reactor design method in any optional implementation of the above embodiments is executed to achieve the following functions: obtaining an ICP reactor model corresponding to the ICP reactor, representing the reaction chamber shape of the ICP reactor using a cubic Bezier curve, adding materials to the wall of the ICP reactor model and setting corresponding material parameters, setting a physical field, and configuring a corresponding optimization solver, solving the cubic Bezier curve using an optimization solver according to the material parameters and the physical field, and calculating the optimal parameter combination of the reaction chamber shape so that the electron density of the ICP reactor model at the reaction chamber outlet reaches a maximum value. Among them, the storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable red-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, magnetic disk or optical disk.

[0084] In the embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interfaces, and the indirect coupling or communication connection of the devices or units can be electrical, mechanical or other forms.

[0085] In addition, the units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, and may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0086] Furthermore, the functional modules in the various embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.

[0087] In this document, relational terms such as first and second, etc. are used merely to distinguish one entity or operation from another entity or operation, but do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0088] The above description is only an embodiment of the present application and is not intended to limit the protection scope of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An ICP reactor design method for optimizing the design of an ICP reactor, characterized in that: Includes steps: Obtaining an ICP reactor model corresponding to the ICP reactor; in the ICP reactor model, using a cubic Bezier curve to represent the shape of the reaction chamber of the ICP reactor; Adding material to the wall of the ICP reactor model and setting corresponding material parameters; Set up the physical field and configure the corresponding optimization solver; According to the material parameters and the physical field, the optimization solver is used to solve the cubic Bezier curve, and the optimal parameter combination of the reaction chamber shape is calculated to make the electron density of the ICP reactor model at the reaction chamber outlet reach a maximum value.

2. The ICP reactor design method according to claim 1, characterized in that: Get the ICP reactor model corresponding to the ICP reactor, including: Obtain the initial model dimensions of the ICP reactor; Based on the initial model size, a cubic Bezier curve is used to represent the reaction chamber shape of the ICP reactor, and a coil model is generated on an offset curve of the cubic Bezier curve to construct an ICP reactor model.

3. The ICP reactor design method according to claim 2, characterized in that: The cubic Bezier curve includes a first cubic Bezier curve representing an inlet of a reaction chamber of the ICP reactor and a second cubic Bezier curve representing an outlet of the reaction chamber of the ICP reactor.

4. The ICP reactor design method according to claim 3, characterized in that: Based on the initial model size, a reaction chamber shape of the ICP reactor is represented by a cubic Bezier curve, and a coil model is generated on an offset curve of the cubic Bezier curve to construct an ICP reactor model, including: generating a first cubic Bezier curve representing the entrance of the reaction chamber of the ICP reactor, and setting the corresponding first control point coordinates; generating a second cubic Bezier curve representing the outlet of the reaction chamber of the ICP reactor, and setting corresponding second control point coordinates; Summarizing the first cubic Bezier curve, the first control point coordinates, the second cubic Bezier curve and the second control point coordinates to obtain the cubic Bezier curve for representing the shape of the reaction chamber of the ICP reactor; generating an offset curve of the cubic Bezier curve, and generating a coil model on the offset curve; An ICP reactor model is constructed according to the initial model size, the cubic Bezier curve and the coil model.

5. The ICP reactor design method according to claim 1, characterized in that: The physical fields include laminar flow physics, thermal convection physics, electromagnetic wave physics and plasma physics.

6. The ICP reactor design method according to claim 5, characterized in that: Set up the physical field and configure the corresponding optimization solver, including: Determining the interior of the reaction chamber of the ICP reactor model as a plasma region; Setting the laminar flow physical field, the thermal convection physical field, the electromagnetic wave physical field and the plasma physical field in the plasma region, and setting corresponding boundary conditions; An optimization solver is configured within the plasma region.

7. The ICP reactor design method according to claim 6, characterized in that: An optimization solver is configured in the plasma region, comprising: disposing a solver within the plasma region; The solver is optimized to obtain the optimized solver.

8. An ICP reactor design device for optimizing the design of an ICP reactor, characterized in that: include: An acquisition module, used for acquiring an ICP reactor model corresponding to the ICP reactor; In the ICP reactor model, a cubic Bezier curve is used to represent the shape of the reaction chamber of the ICP reactor; A setting module, used for adding materials to the wall surface of the ICP reactor model and setting corresponding material parameters; Configuration module, used to set up the physical field and configure the corresponding optimization solver; A calculation module is used to solve the cubic Bezier curve using the optimization solver according to the material parameters and the physical field, and calculate the optimal parameter combination of the reaction chamber shape so that the electron density of the ICP reactor model at the reaction chamber outlet reaches a maximum value.

9. An electronic device, characterized in that: It comprises a processor and a memory, wherein the memory stores a computer program executable by the processor, and when the processor executes the computer program, it runs the steps in the ICP reactor design method according to any one of claims 1 to 7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps in the ICP reactor design method according to any one of claims 1 to 7 are executed.

Images