Preparation method and application of two-dimensional multiferromagnetic material
By mixing silver powder and other materials in a specific proportion and growing by double-temperature chemical vapor phase transport method, a two-dimensional multiferromagnetic material AgCrP2S6 with in-plane and out-of-plane magnetic properties is prepared, which solves the problems of the limitations of the magnetic structure and complex growth process of traditional CuCrP2S2 materials, and achieves efficient and stable material preparation and performance improvement.
Patent Information
- Application Number
- CN202510100985.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-22
- Publication Date
- 2025-03-28
AI Technical Summary
The traditional two-dimensional material CuCrP2S2 has antiferromagnetic properties and its magnetic structure is limited to the in-plane, which limits its application in advanced magnetic devices that require out-of-plane magnetic response. At the same time, the complex and time-consuming multiple temperature change processes during the growth process hinder the preparation and mass production of materials.
The two-dimensional multiferromagnetic material AgCrP2S6 was prepared by mixing silver powder, chromium powder, phosphorus powder and sulfur powder in a specific mass ratio, and growing by a dual-temperature chemical vapor phase transport method for 14-18 days.
The in-plane magnetic properties and out-plane magnetic properties of AgCrP2S6 materials are realized, which significantly enhances the magnetic properties of the material in the out-plane direction, simplifies the growth process, improves production efficiency, reduces manufacturing costs, and ensures the stability and consistency of the material.
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Figure CN119724905A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of two-dimensional materials, and in particular to a preparation method and application of a two-dimensional multiferromagnetic material. Background Art
[0002] The traditional two-dimensional material CuCrP2S2 has antiferromagnetism and its magnetic structure is confined to the plane, which greatly limits the application of CuCrP2S2 in advanced magnetic devices that require out-of-plane magnetic response (such as magnetic sensors and storage of magnetoelectric coupling devices). In addition, the complex and time-consuming multiple temperature change processes during the growth of CuCrP2S2 have greatly hindered the preparation and mass production of CuCrP2S2 materials. Summary of the invention
[0003] In view of the defects of the prior art, the purpose of the present invention is to provide a preparation method and application of a two-dimensional multiferromagnetic material.
[0004] The technical solution of the present invention is: The first aspect of the present invention provides a method for preparing a two-dimensional multiferromagnetic material, wherein the chemical formula of the two-dimensional multiferromagnetic material is AgCrP2S6, and the preparation method comprises the following steps: S1. Mix silver powder, chromium powder, phosphorus powder and sulfur powder evenly to obtain a mixed material; wherein the mass ratio of silver powder, chromium powder, phosphorus powder and sulfur powder is 2.60:1.26:1.49:4.65; S2, vacuum sealing the mixed material obtained in step S1 into a container; S3, placing the container in a dual temperature zone and growing it by chemical vapor transport method for 14-18 days to obtain a two-dimensional multiferromagnetic material; Wherein, the hot end temperature of the dual temperature zone is 800±5°C, the cold end temperature of the dual temperature zone is 700±5°C, and the mixed material is located at the hot end.
[0005] The growth was 14 days.
[0006] The hot end temperature is 800°C.
[0007] The cold end temperature is 700°C.
[0008] When the vacuum is drawn, the sealing operation is performed when the air pressure in the container drops to 1Pa-5Pa.
[0009] The temperature of the sealing operation is 2000-3000℃.
[0010] A second aspect of the present invention provides a two-dimensional multiferromagnetic material AgCrP2S6, which is prepared by the above-mentioned preparation method.
[0011] The third aspect of the present invention provides an application of a two-dimensional multiferromagnetic material AgCrP2S6 in the preparation of data storage devices, quantum Hall effect devices, and sensor products, and the two-dimensional multiferromagnetic material is provided by the above content.
[0012] Compared with the prior art, the present invention has the following beneficial effects: 1. The two-dimensional multiferromagnetic material AgCrP2S6 provided by the present invention is prepared by replacing the Cu element in the prior art with Ag and adopting a dual-temperature zone growth technology in the preparation process. The obtained AgCrP2S6 material has in-plane magnetic properties and out-of-plane magnetic properties.
[0013] 2. The preparation method provided by the present invention induces the transformation of the magnetic structure from in-plane to out-of-plane, thereby significantly enhancing the magnetic properties of the material in the out-of-plane direction, providing greater flexibility and practicality for device design.
[0014] 3. Aiming at the complex and time-consuming multiple temperature change processes in the growth process of two-dimensional materials, the present invention introduces a dual-temperature zone growth technology, which significantly simplifies the growth process and can directly prepare large-size, high-performance AgCrP2S6 materials without cumbersome temperature change steps.
[0015] 4. The preparation method provided by the present invention not only improves production efficiency and reduces manufacturing costs, but also ensures the stability and consistency of the grown crystals, laying a solid foundation for the commercial application of AgCrP2S6 in high-tech fields such as magnetic sensors. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Other features, objects and advantages of the present invention will become more apparent from the detailed description of non-limiting embodiments made with reference to the following drawings: Figure 1 A schematic diagram of the preparation process of the two-dimensional multiferromagnetic material AgCrP2S6 provided in an embodiment of the present invention; Figure 2 Schematic diagram of growing two-dimensional multiferromagnetic material AgCrP2S6 and the obtained AgCrP2S6 material by chemical vapor transport method in a dual-temperature zone tube furnace provided by an embodiment of the present invention ( Figure 2 (a) The device for growing two-dimensional multiferromagnetic material AgCrP2S6 using chemical vapor transport method and the temperature conditions in different areas of the dual-temperature zone tube furnace; Figure 2 (b): Physical picture of AgCrP2S6 material); Figure 3 XRD single crystal diffraction scan of AgCrP2S6 material provided for the first experimental example of the present invention ( Figure 3 (a): Schematic diagram of the crystal structure, the XRD scanning surface is the ab plane; Figure 3(b): Schematic diagram of XRD single crystal diffraction scanning results of AgCrP2S6 material); Figure 4 Schematic diagram of the effect of an external magnetic field on the magnetic moment of AgCrP2S6 material in the out-of-plane and in-plane directions provided in the second experimental example of the present invention ( Figure 4 (a): Schematic diagram of the result of applying an external magnetic field along the c-axis; Figure 4 (b): Schematic diagram of the result of applying an external magnetic field along the ab plane; K refers to Kelvin temperature; T refers to Tesla; H refers to the external magnetic field). DETAILED DESCRIPTION
[0017] The present invention is described in detail below with reference to specific embodiments.
[0018] The following examples will help those skilled in the art to further understand the present invention, but are not intended to limit the present invention in any form. It should be noted that, for those of ordinary skill in the art, several changes and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention.
[0019] Example This embodiment provides a two-dimensional multiferromagnetic material AgCrP2S6. The preparation process of the two-dimensional multiferromagnetic material AgCrP2S6 is as follows: Figure 1 As shown, the preparation method comprises the following steps: S1. Mix silver powder, chromium powder, phosphorus powder and sulfur powder evenly to obtain a mixed material; wherein the mass ratio of silver powder, chromium powder, phosphorus powder and sulfur powder is 2.60:1.26:1.49:4.65; S2, vacuum sealing the mixed material obtained in step S1 into a container; S3, placing the container in a dual temperature zone and growing it by chemical vapor transport for 14-18 days to obtain a two-dimensional multiferromagnetic material, wherein 0.20 g-0.40 g of iodine is added as a transport medium; Among them, the hot end temperature of the dual temperature zone is 800±5℃, the cold end temperature of the dual temperature zone is 700±5℃, and the mixed material is located at the hot end.
[0020] In this embodiment, 2.60 g of silver powder, 1.26 g of chromium powder, 1.49 g of phosphorus powder, 4.65 g of sulfur powder, and 0.20 g-0.40 g of iodine were weighed respectively, and they were fully ground and mixed in a glove box to obtain a mixed material. The mixed material was placed in a quartz tube, and the quartz tube was placed on a tube sealing machine. The equipment was started to evacuate the tube until the air pressure in the tube was 1Pa-5Pa, and the vacuum operation was stopped. The quartz tube was sealed at a high temperature of 2000°C-3000°C to keep the air pressure in the tube unchanged.
[0021] The sealed quartz tube is placed in a double-temperature zone furnace tube, and the hot end temperature of the double-temperature zone furnace tube is set to 800°C, and the cold end temperature is set to 700°C. One end of the quartz tube containing the mixed material is located at the hot end of the double-temperature zone furnace tube, and the other end is located at the cold end, so as to collect the gaseous crystals generated during the heating process, and calcine for 14 days through chemical vapor transport method.
[0022] Schematic diagram of the preparation process of a dual-temperature zone tubular furnace and the temperature conditions of different areas in the dual-temperature zone tubular furnace, such as Figure 2 As shown in (a), the chemical vapor transport method is used to transfer the mixture at the hot end to the cold end, and the growth is carried out at the cold end. The AgCrP2S6 single crystal prepared by the preparation method provided by the present invention is shown in FIG. Figure 2 As shown in (b), the AgCrP2S6 single crystal is bright black block.
[0023] Application Examples This application example provides an application of a two-dimensional multiferromagnetic material AgCrP2S6 in the preparation of data storage devices, quantum Hall effect devices, and sensor products. The AgCrP2S6 material in this application example is provided by an embodiment.
[0024] First Experimental Example The samples used in this experimental example are provided in the examples.
[0025] Set the experimental parameters of XRD experiment, with the ab side of the sample facing up, such as Figure 3 As shown in (a), the test sample is fixed on the sample holder with plasticine to ensure that the sample remains stable during the test and does not move or rotate; the test sample is placed in the test position inside the XRD diffractometer for testing. The test results are shown in Figure 3 As shown in (b), there are five diffraction peaks in the figure, (001), (002), (003), (004), and (005). These five peaks represent the orientations of specific crystal planes of the AgCrP2S6 material, indicating that the sample in the embodiment is a single crystal structure.
[0026] Second Experimental Example The samples used in this experimental example are provided in the examples.
[0027] As the external magnetic field increases, the out-of-plane and in-plane magnetic properties of AgCrP2S6 material are shown in Figure 2. Figure 4 shown. Figure 4 (a) shows that after the magnetic field is applied along the c-axis, a spinflop phase transition occurs near 1T, the spin flips from the out-of-plane direction to the in-plane direction, and then the spin begins to tilt toward the out-of-plane direction. At 5T-7T, all the spins are arranged along the out-of-plane direction. Figure 4(b) shows that when the magnetic field is along the ab plane, the spins tilt along the in-plane direction, and finally all along the in-plane direction at 5T-7T. The out-of-plane and in-plane magnetic moments tend to saturation, that is, all spins are arranged in parallel, indicating that the crystal has strong isotropy, which can make it have good application in sensors.
[0028] The above describes the specific embodiments of the present invention. It should be understood that the present invention is not limited to the above specific embodiments, and those skilled in the art can make various changes or modifications within the scope of the claims, which does not affect the essence of the present invention. In the absence of conflict, the embodiments of the present application and the features in the embodiments can be combined with each other arbitrarily.
Claims
1. A method for preparing a two-dimensional multiferromagnetic material, characterized in that: The chemical formula of the two-dimensional multiferromagnetic material is AgCrP2S6, and the preparation method comprises the following steps: S1. Mix silver powder, chromium powder, phosphorus powder and sulfur powder evenly to obtain a mixed material; wherein the mass ratio of silver powder, chromium powder, phosphorus powder and sulfur powder is 2.60:1.26:1.49:4.65; S2, vacuum sealing the mixed material obtained in step S1 into a container; S3, placing the container in a dual temperature zone and growing it by chemical vapor transport method for 14-18 days to obtain a two-dimensional multiferromagnetic material; Wherein, the hot end temperature of the dual temperature zone is 800±5°C, the cold end temperature of the dual temperature zone is 700±5°C, and the mixed material is located at the hot end.
2. The method for preparing a two-dimensional multiferromagnetic material according to claim 1, characterized in that: The growth was 14 days.
3. The method for preparing a two-dimensional multiferromagnetic material according to claim 1, characterized in that: The hot end temperature is 800°C.
4. The method for preparing a two-dimensional multiferromagnetic material according to claim 1, characterized in that: The cold end temperature is 700°C.
5. The method for preparing a two-dimensional multiferromagnetic material according to claim 1, characterized in that: When the vacuum is drawn, the sealing operation is performed when the air pressure in the container drops to 1Pa-5Pa.
6. The method for preparing a two-dimensional multiferromagnetic material according to claim 5, characterized in that: The temperature of the sealing operation is 2000-3000℃.
7. A two-dimensional multiferromagnetic material, characterized in that: Prepared according to the preparation method according to any one of claims 1 to 6.
8. Use of the two-dimensional multiferromagnetic material as claimed in claim 7 in the preparation of data storage devices, quantum Hall effect devices, and sensor products.