Method for manufacturing heat dissipation structure of power module

Abstract

The embodiment of the invention discloses a manufacturing method of a heat dissipation structure of a power module. The manufacturing method comprises the steps that N power modules and a sealing connection assembly are arranged on the first side face of a first radiator, the sealing connection assembly and the first side face of the first radiator form a containing space, and the N power modules are arranged in the containing space; phase change insulating liquid is arranged in the accommodating space; a second radiator is arranged on the side, away from the first radiator, of the sealing connecting assembly, the second radiator is used for forming a sealed space with the containing space, a cooling liquid channel is formed in the second radiator, and a plurality of cooling pin fins are arranged in the cooling liquid channel; the sum of the volume of the phase change insulating liquid and the volume of the power module is smaller than the volume of the sealed space; wherein the phase-change insulating liquid is used for absorbing heat of the power module from a liquid state to a gas state, and the phase-change insulating liquid is used for transferring the heat to the second radiator and then changing the heat from the gas state to the liquid state. According to the technical scheme, the heat dissipation capability of the power module heat dissipation structure is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a method for manufacturing a heat dissipation structure of a power module. Background Art

[0002] The HPD (Hybrid PACK Drive) power module with existing automotive-grade IGBT or SiC MOSFET is a compact power module for traction applications in hybrid and electric vehicles. It provides a scalable power range of 100kW to 250kW within the 750V and 1200V levels.

[0003] The power module heat dissipation structure adopts a single-sided direct water cooling heat dissipation method, which supports high-power applications. However, the single-sided direct water cooling heat dissipation structure has limited heat dissipation for the power module. Summary of the invention

[0004] The invention provides a method for manufacturing a power module heat dissipation structure to improve the heat dissipation capacity of the power module heat dissipation structure.

[0005] According to one aspect of the present invention, a method for manufacturing a power module heat dissipation structure is provided, comprising:

[0006] providing a first heat sink, the first heat sink comprising a first side;

[0007] N power modules are arranged on the first side of the first heat sink, where the value of N includes an integer greater than or equal to 1;

[0008] A sealing connection assembly is arranged on the first side surface of the first heat sink, the sealing connection assembly and the first side surface of the first heat sink form a receiving space, and the N power modules are arranged in the receiving space;

[0009] Placing a phase-change insulating liquid in the containing space;

[0010] A second heat sink is arranged on a side of the sealed connection assembly away from the first heat sink, the second heat sink is used to form a sealed space with the accommodating space, and a coolant channel is arranged inside the second heat sink, and a plurality of heat dissipation pin fins are arranged in the coolant channel; the sum of the volume of the phase-change insulating liquid and the volume of the power module is less than the volume of the sealed space;

[0011] The phase-change insulating liquid is used to absorb the heat of the power module and change from liquid to gas, and the phase-change insulating liquid is used to transfer the heat to the second heat sink and then change from gas to liquid.

[0012] Optionally, the first heat sink is a first heat sink substrate.

[0013] Optionally, forming N power modules on the first side surface of the first heat sink includes:

[0014] Provide N power modules;

[0015] The N power modules are fixed to the first side surface of the first heat sink by welding or sintering process.

[0016] Optionally, providing a power module includes:

[0017] providing a substrate;

[0018] forming a plurality of power chips on one side of the substrate;

[0019] A bonding strip is formed on a side of the power chip away from the substrate, wherein the bonding strip is electrically connected to the power chip and is used to realize interconnection between a plurality of the power chips;

[0020] A strip bonding pin-fin is formed on a side of the bonding strip away from the power chip, and the strip bonding pin-fin is electrically connected to the bonding strip;

[0021] A plastic encapsulation layer is formed on a side of the power chip away from the substrate, the plastic encapsulation layer covers the power chip and the bonding strip, and exposes the strip bonding pin fins; the strip bonding pin fins are in contact with the phase change insulating liquid.

[0022] Optionally, the substrate comprises a ceramic substrate.

[0023] Optionally, the power chip includes a metal-oxide semiconductor field effect transistor power chip or an insulated gate bipolar transistor power chip.

[0024] Optionally, the metal-oxide semiconductor field effect transistor power chip includes a silicon carbide metal-oxide semiconductor field effect transistor power chip or a gallium nitride metal-oxide semiconductor field effect transistor power chip.

[0025] Optionally, the insulated gate bipolar transistor power chip includes a silicon carbide insulated gate bipolar transistor power chip or a gallium nitride insulated gate bipolar transistor power chip.

[0026] Optionally, the power module includes a half-bridge power module, the value of N is 3, and 3 power modules constitute a three-phase full-bridge power module.

[0027] Optionally, a plurality of signal terminals are provided on a side of the second heat sink away from the power module, the signal terminals being used to connect to external electrical components; the signal terminals are electrically connected to the power module;

[0028] The external electrical component is located at a side of the second heat sink away from the power module.

[0029] In the manufacturing method of the power module heat dissipation structure provided in the embodiment of the present invention, the prepared power module heat dissipation structure includes three heat dissipation structures, namely, a first heat sink, a second heat sink and a phase change insulating liquid in a sealed space between the sealed connection component, the power module and the second heat sink, which realizes active heat dissipation and automatic flow and heat equalization of the coolant, improves the transient heat dissipation capability of the power module heat dissipation structure, and improves the robustness and reliability of the power module. Among them, the double-sided coolant heat dissipation process is as follows: the first heat sink is used to support the power module while dissipating heat from the bottom of the power module. A coolant channel is provided in the second heat sink, and a plurality of heat dissipation pin fins are provided in the coolant channel. When the coolant flows through the coolant channel, the coolant absorbs the heat dissipated by the power module, and the setting of the plurality of heat dissipation pin fins further improves the heat dissipation effect of the coolant. The phase change heat dissipation process of the phase change insulating liquid is as follows: the heat generated when the power module is working is transferred to the phase change insulating liquid in contact with the power module. After the phase change insulating liquid absorbs the heat, it reaches the boiling point temperature, and the phase change insulating liquid undergoes a liquid-gas phase change, and the phase change insulating liquid is transformed from liquid to gas. After the gaseous phase change insulating liquid contacts the second heat sink, it releases the heat to the second heat sink, and the phase change insulating liquid undergoes a secondary phase change, from gas to liquid, and the second heat sink dissipates heat through coolant and heat dissipation pin fins.

[0030] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0032] Figure 1 is a flow chart of a method for manufacturing a power module heat dissipation structure provided by an embodiment of the present invention;

[0033] Figure 2 is a schematic diagram of a transverse cross-sectional structure of a power module heat dissipation structure provided by an embodiment of the present invention;

[0034] Figure 3 is a schematic diagram of a longitudinal cross-sectional structure of a power module heat dissipation structure provided by an embodiment of the present invention;

[0035] Figure 4 yes Figure 2 and Figure 3 A partial structural diagram of the structure of the medium power module, the phase change insulating liquid and the second heat sink;

[0036] Figure 5 yes Figure 1 A schematic diagram of the process included in S120;

[0037] Figure 6 yes Figure 5 Schematic diagram of the process included in S1201. DETAILED DESCRIPTION

[0038] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0039] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0040] In order to improve the heat dissipation capability of the power module heat dissipation structure, the embodiment of the present invention provides the following technical solutions:

[0041] Figure 1 It is a flow chart of a method for manufacturing a power module heat dissipation structure provided by an embodiment of the present invention. Figure 2 is a schematic diagram of a transverse cross-sectional structure of a power module heat dissipation structure provided by an embodiment of the present invention, Figure 3 is a schematic diagram of a longitudinal cross-sectional structure of a power module heat dissipation structure provided by an embodiment of the present invention, Figure 4 yes Figure 2 and Figure 3Partial structural diagram of the structure of the medium power module, phase change insulating liquid and the second heat sink. It should be noted that the transverse cross-sectional view can show the structural diagram in the coolant flow direction X1, and the longitudinal cross-sectional view can show the structural diagram in the direction perpendicular to the coolant flow direction.

[0042] like Figure 1 As shown, the manufacturing method of the power module heat dissipation structure includes the following steps:

[0043] S110 , providing a first heat sink, wherein the first heat sink comprises a first side surface.

[0044] like Figure 2 As shown, a first heat sink 100 is provided, and the first heat sink 100 includes a first side surface.

[0045] S120. Dispose N power modules on a first side surface of a first heat sink, where the value of N includes an integer greater than or equal to 1.

[0046] like Figure 2 As shown, N power modules 200 are formed on the first side of the first heat sink 100 , and the value of N includes an integer greater than or equal to 1.

[0047] S130, disposing a sealing connection assembly on a first side surface of the first heat sink, wherein the sealing connection assembly and the first side surface of the first heat sink form a receiving space, and N power modules are disposed in the receiving space.

[0048] like Figure 2 As shown, a sealing connection assembly 400 is formed on a first side surface of the first heat sink 100 , and the sealing connection assembly 400 and the first side surface of the first heat sink 100 form a receiving space, and N power modules 200 are disposed in the receiving space.

[0049] S140. Arrange a phase-change insulating liquid in the accommodation space.

[0050] like Figure 2 As shown, a phase-change insulating liquid 500 is arranged in the accommodation space.

[0051] S150. A second heat sink is arranged on a side of the sealed connection assembly away from the first heat sink, the second heat sink is used to form a sealed space with the accommodating space, and a coolant channel is arranged inside the second heat sink, and a plurality of heat dissipating pin fins are arranged in the coolant channel; the sum of the volume of the phase change insulating liquid and the volume of the power module is less than the volume of the sealed space.

[0052] like Figure 2As shown, a second heat sink 300 is arranged on a side of the sealing connection assembly 400 away from the first heat sink 100, and the second heat sink 300 is used to form a sealed space with the accommodation space, and a coolant channel 301 is arranged inside the second heat sink 300, and a plurality of heat dissipation pin fins 302 are arranged in the coolant channel 301; the sum of the volume of the phase change insulating liquid 500 and the volume of the power module 200 is less than the volume of the sealed space. Among them, the heat dissipation pin fin 302 is a pin-fin structure, which can improve the heat dissipation effect when the coolant passes through.

[0053] The phase-change insulating liquid 500 is used to absorb the heat of the power module 200 and change from liquid to gas. The phase-change insulating liquid 500 is used to transfer the heat to the second heat sink 300 and then change from gas to liquid.

[0054] Exemplarily, the phase-change insulating fluid 500 includes fluorinated fluid and silicone oil.

[0055] Optionally, the sealing connection assembly 400 includes an injection molded shell and a sealant, wherein the injection molded shell is a high temperature resistant injection molded shell, and the heat generated by the power module 200 is not sufficient to cause the injection molded shell to deform. The injection molded shell is formed by a high temperature injection molding process and is arranged around the power module 200. A threaded hole is provided in the injection molded shell, and is threadedly connected to the first radiator 100 and the second radiator 300 by fasteners such as screws and a sealant to achieve a sealed connection between the injection molded shell and the first radiator 100 and the second radiator 300. The sealant is used to seal the gap between the injection molded shell and the first radiator 100 and the second radiator 300.

[0056] The signal terminal of the power module 200 is bonded to the signal terminal of the injection molded housing by copper wire or aluminum wire, and the power terminal of the power module 200 is fixed to the power terminal of the injection molded housing by ultrasonic bonding or laser welding. Before the first heat sink 100 and the second heat sink 300 are sealed and connected by the sealing connection component 400, a phase change insulating liquid 500 needs to be injected into the sealed space.

[0057] The manufacturing method provided in the embodiment of the present invention, the prepared power module heat dissipation structure includes three heat dissipation structures, namely the first heat sink 100, the second heat sink 300 and the phase change insulating liquid 500 located in the sealed space between the sealing connection component 400, the power module 200 and the second heat sink 300, realizes active heat dissipation and automatic flow and heat equalization of the coolant, improves the transient heat dissipation capacity of the power module heat dissipation structure, and improves the robustness and reliability of the power module. Among them, the double-sided coolant heat dissipation process is as follows: the first heat sink 100 is used to support the power module 200 while dissipating heat from the bottom of the power module 200. The second heat sink 300 is provided with a coolant channel 301, and the coolant channel 301 is provided with a plurality of heat dissipation pin fins 302. When the coolant flows through the coolant channel 301, the coolant absorbs the heat dissipated by the power module 200, and the setting of the plurality of heat dissipation pin fins 302 further improves the heat dissipation effect of the coolant. The phase change heat dissipation process of the phase change insulating liquid 500 is as follows: the heat generated by the power module 200 during operation is transferred to the phase change insulating liquid 500 in contact with the power module 200. After the phase change insulating liquid 500 absorbs the heat, it reaches the boiling point temperature, and the phase change insulating liquid 500 undergoes a liquid-gas phase change, and the phase change insulating liquid 500 is transformed from liquid to gas. After the gaseous phase change insulating liquid 500 contacts the second heat sink 300, it releases the heat to the second heat sink 300. The phase change insulating liquid 500 undergoes a secondary phase change, and is transformed from gas to liquid. The second heat sink 300 dissipates heat through the coolant and the heat dissipation pin fins 302.

[0058] Optionally, the first heat sink 100 is a first heat sink substrate 101 .

[0059] Optionally, based on the above technical solution, Figure 5 As shown, Figure 5 yes Figure 1 The process diagram included in S120, where S120 forms N power modules on a first side of a first heat sink, including:

[0060] S1201. Provide N power modules.

[0061] S1202, fixing N power modules to the first side surface of the first heat sink by welding or sintering process.

[0062] The power module 200 is fixed to one side of the first heat sink 100 by large-area welding or sintering process. The signal terminal of the power module 200 is bonded to the signal terminal of the injection molded housing by copper wire or aluminum wire, and the power terminal of the power module 200 is fixed to the power terminal of the injection molded housing by ultrasonic bonding or laser welding.

[0063] Among them, the phase-change insulating liquid 500 in the sealed space between the sealed connection component 400, the power module 200 and the second heat sink 300 is an active heat dissipation structure, which realizes active heat dissipation through the high-temperature phase change of the phase-change insulating liquid 500, realizes constant and adjustable junction temperature of the power module 200, and reduces the thermal resistance of the power chip in the power module 200. The first heat sink 100 is used to support the power module 200 while dissipating heat from the bottom of the power module 200. The heat dissipation method of the coolant and the heat dissipation pin fins in the second heat sink 300 is automatic flow and heat equalization of the coolant.

[0064] Optionally, based on the above technical solution, Figure 2-Figure 4 As shown, the power module heat dissipation structure further includes a first side coolant channel 600 and a second side coolant channel 700; the first side coolant channel 600 is used to connect to the inlet of the coolant channel 301; the second side coolant channel 700 is used to connect to the outlet of the coolant channel 301. Specifically, the above technical solution enables the coolant to flow through the coolant channel 301 through the first side coolant channel 600, and then the coolant flows out through the coolant channel 301 and the second side coolant channel 700.

[0065] Optionally, based on the above technical solution, Figure 2-Figure 4 As shown, the power module heat dissipation structure also includes a first heat sink substrate 101, a second heat sink substrate 303, a heat sink shell 304, a first side heat sink inner shell 601, a first side heat sink shell 602, a second side heat sink inner shell 701 and a second side heat sink shell 702; the coolant channel 301 is located between the second heat sink substrate 303 and the heat sink shell 304, and the heat dissipation pin fins 302 are located on the surface of the second heat sink substrate 303 facing the heat sink shell 304; the sealing connection component 400 is located between the first heat sink substrate 101 and the second heat sink substrate 303; the first side coolant channel 600 is located between the first side heat sink inner shell 601 and the first The first side radiator outer shell 601 is located at a side of the sealing connection component 400 away from the sealed space and is sealed with the first radiator substrate 101 and the second radiator substrate 303, and the first side radiator outer shell 602 is sealed with the radiator outer shell 304; the second side coolant channel 700 is located between the second side radiator inner shell 701 and the second side radiator outer shell 702, the second side radiator inner shell 701 is located at a side of the sealing connection component 400 away from the sealed space and is sealed with the first radiator substrate 101 and the second radiator substrate 303, and the second side radiator outer shell 702 is sealed with the radiator outer shell 304.

[0066] Specifically, the above technical solution realizes sealing the coolant channel 301, the first side coolant channel 600 and the second side coolant channel 700 inside the power module heat dissipation structure. Optionally, the sealing connection involved in the power module heat dissipation structure can be achieved by fasteners such as screws and sealants. The shell in the power module heat dissipation structure can be made of a material with good thermal conductivity to enhance the heat dissipation effect.

[0067] Optionally, the radiator shell 304, the first side radiator inner shell 601, the first side radiator shell 602, the second side radiator inner shell 701 and the second side radiator shell 702 can be made of aluminum alloy, which has good heat dissipation effect. The first radiator substrate 101, the second radiator substrate 303 and the heat dissipation pin fins 302 can be made of copper with good heat dissipation performance.

[0068] Optionally, based on the above technical solution, Figure 6 As shown, Figure 6 yes Figure 5 The flow diagram included in S1201, S1201, providing a power module includes:

[0069] S1201a. Provide a substrate.

[0070] Among them, Figure 2 As shown, the substrate 201 includes a direct bonded copper (DBC) ceramic substrate or an active metal brazed (AMB) ceramic substrate.

[0071] S1201b, forming a plurality of power chips on one side of the substrate.

[0072] Specifically, Figure 2 As shown, the electrodes or pads of the power chip 202 are fixed to one side of the substrate 201 by sintering or welding process.

[0073] S1201c. Form a bonding strip on a side of the power chip away from the substrate. The bonding strip is electrically connected to the power chip to achieve interconnection between multiple power chips.

[0074] S1201d. Form a strip bonding pin-fin on a side of the bonding strip away from the power chip, and the strip bonding pin-fin is electrically connected to the bonding strip.

[0075] like Figure 2 As shown, the clip pin-fin 205 is connected to the bonding strip 204 through a welding process, so as to weld the clip pin-fin 205 to the power chip 202 and one side of the substrate 201 .

[0076] S1201e. A plastic encapsulation layer is formed on a side of the power chip away from the substrate, the plastic encapsulation layer covers the power chip and the bonding strips, and exposes the strip bonding pin fins; the strip bonding pin fins are in contact with the phase change insulating liquid.

[0077] like Figure 2 As shown, a plastic packaging layer 203 is formed on a side of the power chip 202 away from the substrate 201 to complete the packaging of the power chip 202 .

[0078] The plastic-encapsulated power module 200 is welded to the first heat sink 100. The power module 200 is fixed to one side of the first heat sink 100 by large-area welding or sintering process.

[0079] Optionally, based on the above technical solution, the power chip 202 includes a metal-oxide semiconductor field effect transistor power chip (MOSFET power chip) or an insulated gate bipolar transistor power chip (IGBT power chip).

[0080] Optionally, based on the above technical solution, the metal-oxide semiconductor field effect transistor power chip includes a silicon carbide metal-oxide semiconductor field effect transistor power chip (SiC MOSFET power chip) or a gallium nitride metal-oxide semiconductor field effect transistor power chip (GaN MOSFET power chip).

[0081] Optionally, based on the above technical solution, the insulated gate bipolar transistor power chip includes a silicon carbide insulated gate bipolar transistor power chip (SiC IGBT power chip) or a gallium nitride insulated gate bipolar transistor power chip (GaNIGBT power chip).

[0082] Exemplarily, the pad connecting the MOSFET power chip to the drain is fixed to one side of the substrate 201 by a sintering or welding process, the pad connecting the MOSFET power chip to the source is welded to the strip bonding pin fin 205, and then the power chip 202 is sealed by the plastic sealing layer 203.

[0083] Specifically, the power chip 202 includes any one of a SiC MOSFET power chip, a GaN MOSFET power chip, a SiC IGBT power chip, and a GaN IGBT power chip, which has the advantages of high withstand voltage, low on-resistance, and high frequency, and enhances the electrical performance of the power chip 202 .

[0084] Optionally, based on the above technical solution, the power module 200 includes a half-bridge power module, the value of N is 3, and 3 power modules constitute a three-phase full-bridge power module.

[0085] The three power modules 200 include a U-phase half-bridge power module, a V-phase half-bridge power module, and a W-phase half-bridge power module.

[0086] The heat dissipation structure of the three-phase full-bridge power module is divided into a first heat sink 100 and a second heat sink 300 provided with heat dissipation pin fins 302. The external coolant water channel interface leads to the second heat sink 300. The external coolant takes away the heat of the power module 200 or the device through the second heat sink 300. The power module 200 generates heat during operation, and the heat is transferred to the built-in phase change insulating liquid 500 through the strip bonding pin fins 205 on the upper surface of the power chip 202. The phase change insulating liquid 500 absorbs heat and undergoes phase change (liquid-gas). The vaporized insulating gas rises to the second heat sink 300 (with heat dissipation pin fins 302) and undergoes phase change (gas-liquid) when it encounters cold. The heat is transferred to the second heat sink 300. The heat absorbed by the second heat sink 300 is taken away through the coolant water channel (the first heat sink 100 and the second heat sink 300 are interconnected with the inverter housing water cooling water channel through fastening bolts and sealing rings) to achieve phase change heat dissipation of the three-phase full-bridge power module.

[0087] The manufacturing method of the power module heat dissipation structure provided by the embodiment of the present invention realizes active heat dissipation and automatic flow and heat equalization of the coolant and double-sided heat dissipation, improves the transient heat dissipation capability of the power module heat dissipation structure, reduces transient thermal resistance, and improves the robustness and reliability of the power module. In addition, the heat dissipation structure of the power module has the following beneficial effects: phase-change insulating liquid is poured between the side frame of the power module and the second heat sink, and the high-temperature phase change of the coolant at a constant boiling point absorbs heat for active heat dissipation, which can increase the junction temperature of the power module and reduce the thermal resistance of the power module or power device; the power module is automatically equalized in current and heat through active heat dissipation; the heat transfer is completed by transient and rapid absorption of heat when the phase change occurs at a constant boiling point of the coolant, and active heat dissipation is achieved, which can stabilize the junction temperature of the power module and reduce the thermal resistance of the power module or power device at high loss; the power module is automatically equalized in current and heat through active heat dissipation; the heat dissipation structure on the top of the power module can cool the driver board transformer and driver; a wider current range can be covered by increasing or decreasing the number of power chips inside the power module to meet the application requirements of customers in different power segments; compared with existing power modules, while ensuring the same current output capacity, the number of chips used is reduced, the product cost is reduced, the module packaging volume is reduced, and the power density is increased; the transient loss heat dissipation capacity is improved, which can reduce the short-term high current peak working conditions of the power module or power device. The junction temperature rise caused by the high heat generated can improve the short-circuit capacity of the power module or power device; double-layer sealing of the power chip can reduce the impact of extreme conditions on the power chip, and improve the tolerance of the high temperature and high humidity bias test system (H3TRB), the high voltage, high temperature and high humidity bias test system (HV-H3TRB), and the low voltage, high temperature and high humidity bias test system (LV-H3TRB); the active heat dissipation and automatic heat equalization function of the power module or power device can make up for the uneven distribution of the on-resistance (Rdson); the copper bus terminal adopts laser welding technology, which has high production efficiency, flexible assembly and high reliability; the double-layer sealing structure isolates external water vapor, salt spray, etc., and is salt spray, moisture-proof and waterproof; it is suitable for high power density and high performance application scenarios, which helps to improve the application efficiency of the client; the copper busbar is used for signal and large current transmission, which reduces the parasitic inductance of the power module or power device, reduces the volume of the power module or power device, and reduces the product cost; the power chip works at a high frequency, reduces switching loss, reduces energy loss, thereby increasing the current density and enhancing the system reliability and life.

[0088] Optionally, based on the above technical solution, Figure 2 As shown, a plurality of signal terminals 800 are provided on a side of the second heat sink 300 away from the power module 200 , and the signal terminals 800 are used to connect with external electrical components; the signal terminals 800 are electrically connected to the power module 200 ; and the external electrical components are located on a side of the second heat sink 300 away from the power module 200 .

[0089] Specifically, the external electrical component can be a device such as a driver board transformer. While the external electrical component is electrically connected to the power module 200 through the signal terminal 800, the heat dissipation of the external electrical component can be achieved through the second heat sink 300, thereby improving its electrical performance. When the external electrical component is a driver board transformer, the driving capability of the driver board transformer can be improved.

[0090] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0091] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for manufacturing a power module heat dissipation structure, characterized in that: include: providing a first heat sink, the first heat sink comprising a first side; N power modules are arranged on the first side of the first heat sink, where the value of N includes an integer greater than or equal to 1; A sealing connection assembly is arranged on the first side surface of the first heat sink, the sealing connection assembly and the first side surface of the first heat sink form a receiving space, and the N power modules are arranged in the receiving space; Placing a phase-change insulating liquid in the containing space; A second heat sink is arranged on a side of the sealed connection assembly away from the first heat sink, the second heat sink is used to form a sealed space with the accommodating space, and a coolant channel is arranged inside the second heat sink, and a plurality of heat dissipation pin fins are arranged in the coolant channel; the sum of the volume of the phase-change insulating liquid and the volume of the power module is less than the volume of the sealed space; The phase-change insulating liquid is used to absorb the heat of the power module and change from liquid to gas, and the phase-change insulating liquid is used to transfer the heat to the second heat sink and then change from gas to liquid.

2. The method for manufacturing a power module heat dissipation structure according to claim 1, characterized in that: The first heat sink is a first heat sink substrate.

3. The method for manufacturing a power module heat dissipation structure according to claim 1, characterized in that: Forming N power modules on the first side of the first heat sink includes: Provide N power modules; The N power modules are fixed to the first side surface of the first heat sink by welding or sintering process.

4. The method for manufacturing a power module heat dissipation structure according to claim 3, characterized in that: Power modules provided include: providing a substrate; forming a plurality of power chips on one side of the substrate; A bonding strip is formed on a side of the power chip away from the substrate, wherein the bonding strip is electrically connected to the power chip and is used to realize interconnection between a plurality of the power chips; A strip bonding pin-fin is formed on a side of the bonding strip away from the power chip, and the strip bonding pin-fin is electrically connected to the bonding strip; A plastic encapsulation layer is formed on a side of the power chip away from the substrate, the plastic encapsulation layer covers the power chip and the bonding strip, and exposes the strip bonding pin fins; the strip bonding pin fins are in contact with the phase change insulating liquid.

5. The method for manufacturing a power module heat dissipation structure according to claim 4, characterized in that: The substrate includes a ceramic substrate.

6. The method for manufacturing a power module heat dissipation structure according to claim 4, characterized in that: The power chip includes a metal-oxide semiconductor field effect transistor power chip or an insulated gate bipolar transistor power chip.

7. The method for manufacturing a power module heat dissipation structure according to claim 6, characterized in that: The metal-oxide semiconductor field effect transistor power chip includes a silicon carbide metal-oxide semiconductor field effect transistor power chip or a gallium nitride metal-oxide semiconductor field effect transistor power chip.

8. The method for manufacturing a power module heat dissipation structure according to claim 6, characterized in that: The insulated gate bipolar transistor power chip includes a silicon carbide insulated gate bipolar transistor power chip or a gallium nitride insulated gate bipolar transistor power chip.

9. The method for manufacturing a power module heat dissipation structure according to claim 1, characterized in that: The power module includes a half-bridge power module, the value of N is 3, and 3 power modules constitute a three-phase full-bridge power module.

10. The method for manufacturing a power module heat dissipation structure according to claim 1, characterized in that: A plurality of signal terminals are provided on a side of the second heat sink away from the power module, wherein the signal terminals are used to connect to external electrical components; the signal terminals are electrically connected to the power module; The external electrical component is located at a side of the second heat sink away from the power module.

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