Substrate processing apparatus and substrate processing method using the same

Abstract

A substrate processing method includes: placing a substrate in a substrate processing apparatus; applying source power to the substrate processing apparatus; and applying the bias power to the substrate processing apparatus, where applying the source power to the substrate processing apparatus includes: providing a first radio frequency (RF) power to the substrate processing apparatus with a first pulse having a first period; and providing a second RF power to the substrate processing apparatus with a second pulse having a second period, where the first period is longer than the second period.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2023-0129081 filed in the Korean Intellectual Property Office on September 26, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The inventive concept relates to a substrate processing apparatus and a substrate processing method using the same, and more particularly, to a substrate processing apparatus using a deposition cycle and a substrate processing method using the same. Background Art

[0004] Semiconductor devices can be produced using a variety of processes, such as photolithography, etching processes, deposition, and electroplating. In the manufacture of semiconductor devices, plasma can be used during the etching process. Radio frequency (RF) power can be applied to the plasma electrode to generate and control the plasma. The etching process can be performed while applying RF power to the plasma electrode. Summary of the invention

[0005] Embodiments of the inventive concept provide a substrate processing apparatus capable of preventing a mask from being damaged and a substrate processing method using the substrate processing apparatus.

[0006] Embodiments of the inventive concept provide a substrate processing apparatus for improving etching selectivity and a substrate processing method using the substrate processing apparatus.

[0007] Embodiments of the inventive concept provide a substrate processing apparatus capable of easily performing a high aspect ratio contact (HARC) process and a substrate processing method using the same.

[0008] According to an embodiment of the present invention, there is provided a substrate processing method, comprising: placing a substrate in a substrate processing device; applying source power to the substrate processing device; and applying bias power to the substrate processing device, wherein applying the source power to the substrate processing device comprises: providing a first radio frequency (RF) power to the substrate processing device using a first pulse having a first period; and providing a second RF power to the substrate processing device using a second pulse having a second period, wherein the first period is longer than the second period.

[0009] According to an embodiment of the present invention, there is provided a substrate processing method, comprising: placing a substrate in a substrate processing device; and processing the substrate in the substrate processing device, wherein processing the substrate comprises: performing a deposition process on the substrate; performing an etching process on the substrate, wherein performing the deposition process on the substrate comprises: providing a first RF power to the substrate processing device using a first pulse having a first period, wherein performing the etching process on the substrate comprises: providing a second RF power to the substrate processing device using a second pulse having a second period; and applying a bias power to the substrate processing device, wherein the first RF power is greater than the second RF power.

[0010] According to an embodiment of the inventive concept, there is provided a substrate processing apparatus, comprising: a process chamber, comprising a process space; a chuck, in the process chamber; a plasma electrode, in the process chamber; a bias power generator, applying bias power to the plasma electrode; a source power generator, applying source power to the plasma electrode; and a synchronization pulse signal generator, connected to each of the bias power generator and the source power generator, wherein the chuck comprises: a chuck body, supporting a substrate; and a chuck electrode, in the chuck body, wherein the synchronization pulse signal generator and the source power generator apply a first RF power and a second RF power to the plasma electrode, wherein the first RF power comprises a first pulse having a first period, wherein the second RF power comprises a second pulse having a second period, wherein the first period is longer than the second period, and wherein the first RF power is greater than the second RF power. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 A cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the inventive concept is shown.

[0012] Figure 2 Shown Figure 1 An enlarged cross-sectional view of section X.

[0013] Figure 3 A flowchart representing a substrate processing method according to an embodiment of the inventive concept is shown.

[0014] Figure 4 , Figure 5 , Figure 6 and Figure 7 Shown is the representation according to Figure 3 A cross-sectional view of a flow chart of a substrate processing method.

[0015] Figure 8 and Fig. 9 It is shown that according to Figure 3 A graph of power applied to a plasma electrode during a flow chart of a substrate processing method.

[0016] Fig.10, Fig.11 , Fig.12 , Fig.13 and Fig.14 It is shown that according to Figure 3 A graph of power applied to a plasma electrode during a flow chart of a substrate processing method.

[0017] Fig.15 A cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the inventive concept is shown. DETAILED DESCRIPTION

[0018] Some embodiments of the inventive concept will be described below with reference to the accompanying drawings. Throughout the specification, the same reference numerals may indicate the same components.

[0019] Figure 1 A cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the inventive concept is shown.

[0020] In this specification, symbol D1 may indicate a first direction, symbol D2 may indicate a second direction intersecting the first direction D1, and symbol D3 may indicate a third direction intersecting each of the first direction D1 and the second direction D2. The first direction D1 may be referred to as a vertical direction. Each of the second direction D2 and the third direction D3 may be referred to as a horizontal direction.

[0021] Reference Figure 1 , a substrate processing device SA may be provided. The substrate processing device SA may perform an etching process and / or a deposition process on the substrate. For example, the substrate processing device SA may repeatedly perform an etching process and a deposition process on the substrate. The term "substrate" used in this specification may represent a silicon (Si) wafer, but the inventive concept is not limited thereto. The substrate processing device SA may use plasma to process the substrate. The substrate processing device SA may generate plasma in various ways. For example, the substrate processing device SA may be a capacitively coupled plasma (CCP) device and / or an inductively coupled plasma (ICP) device. For convenience, a CCP-type substrate processing device will be described and discussed below. The substrate processing device SA may include a process chamber 1, a chuck 7, a plasma electrode 3, a direct current (DC) power generator 2, a radio frequency (RF) power generator 4, a vacuum pump VP, and a gas supply GS.

[0022] The process chamber 1 may provide a process space 1h. A substrate process may be performed in the process space 1h. The process space 1h may be isolated from an external space. For example, a wall of the process chamber 1 may isolate the process space 1h from the outside. During the substrate process, the process space 1h may be in a substantially vacuum state. The process chamber 1 may have a cylindrical shape, but the inventive concept is not limited thereto.

[0023] The chuck 7 may be located in the process chamber 1. For example, the chuck 7 may be located in the process space 1h. The chuck 7 may support and / or hold the substrate. A substrate process may be performed with the substrate located on the chuck 7. The chuck 7 will be discussed in further detail below.

[0024] The plasma electrode 3 may be located in the process chamber 1 . For example, the plasma electrode 3 may be located in the process space 1 h . The plasma electrode 3 may include an upper electrode 31 and a lower electrode 33 .

[0025] The upper electrode 31 may be disposed above the chuck 7 and spaced apart from the chuck 7. An empty space may be provided between the upper electrode 31 and the chuck 7. The upper electrode 31 may include a plurality of pores. For example, the upper electrode 31 may include a showerhead. The upper electrode 31 may be connected to a gas supply part GS. The gas supplied from the gas supply part GS may be uniformly sprayed into the process space 1h through the upper electrode 31.

[0026] The lower electrode 33 may be located in the chuck 7. The lower electrode 33 may face the upper electrode 31. The lower electrode 33 may be electrically connected to the RF power generator 4. The lower electrode 33 may be provided with RF power and / or bias power from the RF power generator 4. The lower electrode 33 may form an electric field and / or a magnetic field in the process space 1h. The lower electrode 33 may generate plasma in the process space 1h. The lower electrode 33 may control the plasma. The lower electrode 33 may include a conductive material. For example, the lower electrode 33 may include aluminum (Al). The lower electrode 33 may have a disc shape, but the inventive concept is not limited thereto. The lower electrode 33 will be discussed in further detail below.

[0027] The DC power generator 2 may apply DC power to the chuck 7. The DC power applied from the DC power generator 2 may firmly fix the substrate at a specific position on the chuck 7.

[0028] The RF power generator 4 may supply RF power to the plasma electrode 3. For example, the RF power generator 4 may supply RF power and / or bias power to the lower electrode 33. Thus, the plasma in the process space 1h can be controlled. A detailed description thereof will be further discussed below.

[0029] A vacuum pump VP may be connected to the process space 1h. The vacuum pump VP may apply vacuum pressure to the process space 1h during a substrate process.

[0030] The gas supply part GS may supply gas to the process space 1h. The gas supply part GS may include a gas storage tank, a compressor, and a valve. Plasma may be generated by a portion of the gas supplied from the gas supply part GS to the process space 1h.

[0031] Figure 2 Shown Figure 1An enlarged cross-sectional view of section X.

[0032] Reference Figure 2 The chuck 7 may include an upper chuck 71 and a cooling plate 73 .

[0033] The substrate may be disposed on an upper chuck 71. The upper chuck 71 is designed to firmly hold the substrate in a specific position. The upper chuck 71 may include a chuck body 711, a chuck electrode 715, and a heater 717. The chuck body 711, the heater 717, and the chuck electrode 715 may be arranged in sequence.

[0034] The chuck body 711 may have a cylindrical shape. The chuck body 711 may include ceramics, but the inventive concept is not limited thereto. A substrate may be disposed on a top surface of the chuck body 711. The chuck body 711 may be surrounded by a focus ring FR and / or an edge ring ER. The lower electrode 33 may be disposed in the chuck body 711.

[0035] The chuck electrode 715 may be located in the chuck body 711. The chuck electrode 715 may be located above the lower electrode 33. For example, the chuck electrode 715 and the lower electrode 33 may face each other. DC power may be applied to the chuck electrode 715. For example, the DC power generator 2 may apply DC power to the chuck electrode 715 via a DC power line. The DC power applied to the chuck electrode 715 may firmly hold the substrate at a specific position on the chuck body 711. The chuck electrode 715 may include aluminum (Al), but the inventive concept is not limited thereto.

[0036] The heater 717 may be located in the chuck body 711. The heater 717 may be located between the chuck electrode 715 and the lower electrode 33. The heater 717 may include heat wiring. For example, the heater 717 may include concentric circular heat wiring. The heater 717 may radiate heat to its surroundings. Therefore, the chuck body 711 may have an elevated temperature.

[0037] The cooling plate 73 may be located below the upper chuck 71. For example, the upper chuck 71 may be located on the cooling plate 73. The cooling plate 73 may include cooling holes 73h. Cooling water may flow in the cooling holes 73h. The cooling water in the cooling holes 73h may absorb heat from the cooling plate 73.

[0038] The RF power generator 4 may be electrically connected to the lower electrode 33. The RF power generator 4 may provide source power and / or bias power to the lower electrode 33 via an RF power line. The RF power generator 4 may include a synchronization pulse signal generator 41, a source power generator 43, a bias power generator 45, and a matcher 47.

[0039] The synchronization pulse signal generator 41 may generate a pulse. The synchronization pulse signal generator 41 may be electrically connected to each of the source power generator 43 and the bias power generator 45 .

[0040] The source power generator 43 may generate source power. For example, the source power generator 43 may generate RF power. The RF power generated by the source power generator 43 may be changed into a pulse type by the synchronization pulse signal generator 41. For example, the RF power may be converted into a pulse type by the synchronization pulse signal generator 41. The pulsed source power generated by the source power generator 43 and the synchronization pulse signal generator 41 may be sent to the lower electrode 33 through the matcher 47.

[0041] The bias power generator 45 can generate bias power. For example, the bias power generator 45 can generate a sine wave, a non-sine wave and / or RF power. The sine wave generated by the bias power generator 45 may include a square wave pulse, but the inventive concept is not limited thereto. The bias power generated by the bias power generator 45 can be changed into a pulse type by the synchronization pulse signal generator 41. For example, the bias power can be converted into a pulse type by the synchronization pulse signal generator 41. The pulsed bias power generated by the bias power generator 45 and the synchronization pulse signal generator 41 can be sent to the lower electrode 33 by the matcher 47. The matcher 47 may include a filter that mixes RF power and a non-sine wave, but the inventive concept is not limited thereto. The detailed description thereof will be further discussed below.

[0042] Figure 3 A flowchart representing a substrate processing method according to an embodiment of the inventive concept is shown.

[0043] Reference Figure 3 , a substrate processing method SS can be provided. The substrate processing method SS can be by using reference Figure 1 and Figure 2 The substrate processing method SS may include: placing a substrate in a substrate processing apparatus (S1); and processing the substrate (S2).

[0044] The substrate processing step S2 may include: performing a deposition process on the substrate ( S21 ); performing an etching process on the substrate ( S22 ); and not applying power to the substrate processing device ( S23 ).

[0045] The deposition process step S21 may include applying source power to the substrate processing device ( S211 ).

[0046] The source power applying step S211 may include applying a first RF power to the substrate processing apparatus ( S2111 ).

[0047] The etching process step S22 may include: applying source power to the substrate processing device (S221); and applying bias power to the substrate processing device (S222).

[0048] The source power applying step S221 may include applying a second RF power to the substrate processing apparatus ( S2211 ).

[0049] The following will refer to Figures 4 to 9 The substrate processing method SS is discussed in detail.

[0050] Figures 4 to 7 Shown is the representation according to Figure 3 A cross-sectional view of a flow chart of a substrate processing method.

[0051] Reference Figure 3 , Figure 4 and Figure 5 , the substrate placement step S1 may include: placing a substrate WF on a chuck 7. The substrate WF may include, for example, a silicon (Si) wafer. The robot arm may introduce the substrate WF into the process chamber 1. The substrate WF inserted into the process space 1h may be set on the top surface of the chuck 7. The chuck 7 may rigidly fix the substrate WF in a specific position. For example, when the DC power generator 2 is directed to the chuck electrode (see Figure 2 When DC power is applied to the chuck electrode 715, the chuck electrode 715 can fix the substrate WF at a specific position on the chuck 7. In a state where the substrate WF is loaded on the chuck 7, the process gas can also be introduced into the process space 1h. For example, the process gas supplied from the gas supply part GS can be distributed through the upper electrode 31 and then introduced into the process space 1h.

[0052] Reference Figure 3 and Figure 6 The first RF power application step S2111 may include: allowing the RF power generator 4 to apply power to the substrate processing device (see Figure 5 The first RF power P1 is supplied by the SA of the synchronous pulse signal generator 41. For example, the synchronous pulse signal generator 41 and the source power generator 43 can apply the first RF power P1 to the lower electrode 33. The first RF power generated by the synchronous pulse signal generator 41 and the source power generator 43 can be sent to the lower electrode 33 through the matcher 47. The first RF power P1 can be a pulsed RF. The pulse of the first RF power P1 can be referred to as a first pulse. The period of the first pulse can be referred to as a first period. The first RF power P1 can be in the process space (see Figure 5 The plasma in the process space 1h can be used to perform a deposition process on the substrate (see Figure 5 For example, in a deposition process, a deposition action may also be performed on a mask in the substrate WF. The first RF power P1 will be discussed in further detail below.

[0053] Reference Figure 3 and Figure 7 , the first RF power can be stopped (see Figure 6 The second RF power application step S2211 may include: allowing the RF power generator 4 to apply power to the substrate processing device (see Figure 5 The second RF power P2 is supplied by the SA of the synchronous pulse signal generator 41. For example, the synchronous pulse signal generator 41 and the source power generator 43 can apply the second RF power P2 to the lower electrode 33. The second RF power generated by the synchronous pulse signal generator 41 and the source power generator 43 can be sent to the lower electrode 33 through the matcher 47. The second RF power P2 can be a pulsed RF. The pulse of the second RF power P2 can be referred to as a second pulse. The period of the second pulse can be referred to as a second period. The second period can be shorter than the first period. Figure 8 As shown, the second RF power P2 may be less than the first RF power (see Figure 6 For example, the first RF power P1 may be greater than the second RF power P2. However, the inventive concept is not limited thereto. For example, the first RF power P1 may be less than the second RF power P2. The second RF power P2 may be greater than the second RF power P2 in the process space (see Figure 5 The second RF power P2 will be discussed in further detail below.

[0054] The bias power applying step S222 may be performed by stopping supplying the first RF power (see Figure 6 's P1). At least a portion of the bias power applying step S222 may be performed simultaneously with, for example, the second RF power applying step S2211. The bias power applying step S222 and the first RF power applying step S2111 may not overlap with each other in time. For example, the bias power applying step S222 may not overlap with the first RF power applying step S2111. However, the inventive concept is not limited thereto, and the bias power applying step S222 and the first RF power applying step S2111 may overlap with each other in time. In the case where the bias power applying step S222 and the first RF power applying step S2111 overlap, in the first RF power applying step S2111, a bias power having an output equal to or less than approximately 50% of the maximum output of the bias power may be applied. The bias power applying step S222 may include: allowing the RF power generator 4 to apply power to the substrate processing device (see Figure 5SA) supplies bias power P3. For example, the synchronization pulse signal generator 41 and the bias power generator 45 can apply bias power P3 to the lower electrode 33. The bias power P3 generated by the synchronization pulse signal generator 41 and the bias power generator 45 can be sent to the lower electrode 33 through the matcher 47. The bias power P3 can be a sine wave or a pulsed non-sinusoidal wave. Alternatively, the bias power P3 can be a pulsed RF. The pulse of the bias power P3 can be referred to as a third pulse. The period of the third pulse can be referred to as a third period. The third period can be shorter than the first period. The third period can be, for example, substantially the same or similar to the second period. The bias power P3 can cause the plasma in the process space 1h to be directed toward the substrate (see Figure 5 For example, the bias power P3 can cause the substrate WF to undergo an etching process. The bias power P3 will be discussed in further detail below.

[0055] Figure 8 and Fig. 9 It is shown that according to Figure 3 A graph of power applied to a plasma electrode during a flow chart of a substrate processing method.

[0056] Reference Figure 3 , Figure 8 and Fig. 9 , the first RF power applying step S2111 may last for a first duration. The first period L1 may include a period of the first pulse PS1 of the first RF power P1. The first duration may be, for example, substantially the same or similar to the first period L1. The first duration may be greater than about 100 milliseconds (ms). The first period L1 may be greater than about 100 ms.

[0057] The second RF power application step S2211 may last for a second duration. The second duration may be greater than, for example, about 100ms. In the second pulse PS2 of the second RF power P2, the second RF power P2 may be supplied within the first unit duration L2. In the second pulse PS2 of the second RF power P2, the supply of the second RF power P2 may be interrupted for a second unit duration L3. In other words, the second RF power P2 may not be supplied during the second unit duration L3. As described above, the second period L2+L3 may include the period of the second pulse PS2 of the second RF power P2. The second period L2+L3 may be shorter than the second duration. For example, the second period L2+L3 may be less than about 100ms.

[0058] The bias power applying step S222 may last for a fourth duration. The fourth duration may be greater than, for example, about 100ms. In the third pulse of the bias power P3, the bias power P3 may be supplied within the third unit time period L5. In the third pulse of the bias power P3, the supply of the bias power P3 may be interrupted for a fourth unit time period L6. In other words, the bias power P3 may not be supplied during the fourth unit time period L6. As described above, the third period L5+L6 may include the period of the third pulse of the bias power P3. The third period L5+L6 may be shorter than the second duration. For example, the third period L5+L6 may be less than about 100ms.

[0059] The first RF power applying step S2111 and the second RF power applying step S2211 may be alternately and repeatedly performed.

[0060] The power application step S23 may not be performed after the second RF power application step S2211 is terminated and before the first RF power application step S2111 is started again. The power application step S23 may not be performed for a third duration L4. The third duration L4 may be greater than about 100ms. During the period when the power application step S23 is not performed, particles on the substrate may be depleted. In the non-performance of the power application step S23, the first RF power P1 and the second RF power P2 and the bias power P3 are not provided.

[0061] According to the substrate processing device of the embodiment of the present invention and the substrate processing method using the substrate processing device, a deposition process can be performed on the substrate before an etching process is performed on the substrate. Therefore, the mask of the substrate is not damaged. Thus, the etching selectivity relative to the substrate can be increased. In addition, a high aspect ratio contact (HARC) process can be easily performed.

[0062] Fig.10 and Fig.14 It is shown that according to Figure 3 A graph of power applied to a plasma electrode during a flow chart of a substrate processing method.

[0063] The following will be omitted and referenced Figures 1 to 9 Description of content that is substantially the same or similar to the content discussed.

[0064] Reference Fig.10 , when the supply of the second RF power P2 is interrupted, the supply of the bias power P3 may start. In addition, when the supply of the bias power P3 is interrupted, the supply of the second RF power P2 may start again. For example, the supply of the second RF power P2 and the bias power P3 may not overlap.

[0065] Reference Fig.11, when the supply of the second RF power P2 is performed, the supply of the bias power P3 may start. For example, the supply of the second RF power P2 and the supply of the bias power P3 may overlap. In addition, when the supply of the second RF power P2 is interrupted, the supply of the bias power P3 may be interrupted.

[0066] Reference Fig.12 , when the supply of the second RF power P2 is interrupted, the supply of the bias power P3 may start. In addition, when the supply of the bias power P3 is interrupted, the supply of the second RF power P2 may start again.

[0067] Reference Fig.13 , when the supply of the second RF power P2 starts, the supply of the bias power P3 may start. When the supply of the second RF power P2 is interrupted, the supply of the bias power P3 may continue. In other words, while the second RF power P2 is interrupted, the bias power P3 may continue to be supplied. When the supply of the second RF power P2 is interrupted, the supply of the bias power P3 may also be interrupted.

[0068] Reference Fig.14 , the bias power P3 may not have a pulse type. For example, the bias power P3 may be supplied without interruption.

[0069] Fig.15 A cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the inventive concept is shown.

[0070] The following will be omitted and referenced Figures 1 to 14 The components discussed are descriptions of substantially the same or similar components.

[0071] Reference Fig.15 , a substrate processing device SA′ may be provided. The substrate processing device SA′ may include a first RF power generator 4a and a second RF power generator 4b. The first RF power generator 4a may be electrically connected to the lower electrode 33 via a power line. The first RF power generator 4a may apply bias power to the lower electrode 33. The second RF power generator 4b may be electrically connected to the upper electrode 31 via a power line. The second RF power generator 4b may apply source power to the upper electrode 31. For example, the source power may be supplied not to the lower electrode 33 but to the upper electrode 31.

[0072] According to the substrate processing apparatus and the substrate processing method using the substrate processing apparatus of the present inventive concept, it is possible to prevent the mask from being damaged.

[0073] According to the substrate processing apparatus of the present inventive concept and the substrate processing method using the same, etching selectivity can be increased.

[0074] According to the substrate processing apparatus of the inventive concept and the substrate processing method using the same, a high aspect ratio contact (HARC) process may be easily performed.

[0075] The effects of the present inventive concept are not limited to the above effects, and those skilled in the art will clearly understand other effects not mentioned above based on the above description.

[0076] Although the inventive concept has been described in conjunction with the embodiments of the present invention, it will be appreciated by those skilled in the art that various changes and modifications may be made to the inventive concept without departing from the technical spirit and features of the inventive concept as set forth in the claims. Therefore, it should be understood that the above embodiments are illustrative rather than restrictive.

Claims

1. A substrate processing method, comprising: placing a substrate in a substrate handling device; applying source power to the substrate processing device; as well as applying bias power to the substrate processing device, Wherein, applying the source power to the substrate processing device comprises: providing a first radio frequency (RF) power to the substrate processing device using a first pulse having a first period; and providing a second RF power to the substrate processing device using a second pulse having a second period, The first period is longer than the second period.

2. The method according to claim 1, wherein: The first RF power is greater than the second RF power.

3. The method according to claim 1, wherein: The first RF power is less than the second RF power.

4. The method according to claim 1, wherein: Applying the bias power to the substrate processing device includes: providing the bias power to the substrate processing device using a third pulse having a third period, The third period is the same as the second period.

5. The method according to claim 4, wherein: Applying a portion of the bias power is performed simultaneously with applying the second RF power.

6. The method according to claim 1, wherein: The bias power is a non-sinusoidal wave or a sine wave.

7. The method according to claim 1, wherein: Applying the bias power and applying the first RF power may overlap or not overlap each other in time.

8. The method according to claim 1, wherein: applying the first RF power for a first duration, applying the second RF power for a second duration, The first duration is the same as the first period, and The second duration is longer than the second period.

9. The method according to claim 8, wherein: Each of the first duration and the second duration is greater than 100 milliseconds, and The second period is equal to or less than 100 milliseconds.

10. The method according to claim 1, wherein: Applying the first RF power and applying the second RF power are alternately and repeatedly performed.

11. The method according to claim 10, further comprising: No source power is applied to the substrate processing apparatus.

12. The method according to claim 11, wherein: After the application of the second RF power is stopped and before the application of the first RF power is started again, source power is not applied to the substrate processing apparatus.

13. A substrate processing method, comprising: placing a substrate in a substrate handling device; as well as processing the substrate in the substrate processing apparatus, Wherein, processing the substrate comprises: performing a deposition process on the substrate; and performing an etching process on the substrate, The step of performing the deposition process on the substrate comprises: providing a first RF power to the substrate processing device using a first pulse having a first period, Wherein, performing the etching process on the substrate comprises: providing a second RF power to the substrate processing device using a second pulse having a second period; and applying bias power to the substrate processing device, The first RF power is greater than the second RF power.

14. The method according to claim 13, wherein: Performing the deposition process on the substrate and performing the etching process on the substrate are alternately and repeatedly performed.

15. The method according to claim 14, after stopping the etching process on the substrate and before starting the deposition process on the substrate again, further comprising: No power is applied to the substrate processing device.

16. The method according to claim 13, wherein: The second period is shorter than the first period.

17. The method according to claim 13, wherein: The substrate processing device comprises: Craft Room, including craft space; a chuck, in the process chamber; an upper electrode overlapping the chuck and spaced apart from the chuck; and The lower electrode, in the chuck, Wherein, the chuck comprises: a chuck body supporting the substrate; and A chuck electrode is in the chuck body.

18. The method according to claim 17, wherein: applying each of the first RF power and the second RF power to the upper electrode, and The bias power is applied to the lower electrode.

19. The method according to claim 17, wherein: Each of the first RF power, the second RF power, and the bias power is applied to the lower electrode.

20. The method according to claim 13, wherein: performing the deposition process on the substrate for a first duration, performing the etching process on the substrate for a second duration, and The first period is the same as the first duration.

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