Crystal grain pickup method and device, bonding equipment and storage medium

By scanning the notch features and grain coordinates on the wafer and establishing a practical map, the problem of low grain pickup efficiency in the existing technology is solved, and fast and accurate grain positioning and picking is achieved.

CN119725198APending Publication Date: 2025-03-28PIOTECH (HAINING) SEMICON EQUIP CO LTD
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Patent Information

Application Number
CN202411804128.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-09
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

The prior art is difficult to quickly and accurately pick up target grains from the cutting film, and wafers of different sizes and cutting methods need to be redefined, affecting the efficiency of the processing technology of semiconductor devices.

Method used

By scanning the coordinates of multiple grains on the wafer in sequence according to the preset route according to the coordinates of the notch characteristics on the wafer, an actual map is established to quickly locate the positions of each grain on the wafer.

Benefits of technology

The actual map of each grain on the wafer is achieved quickly and accurately, which improves the efficiency of grain picking and reduces the need for wafer definitions of different sizes and cutting methods.

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Abstract

The invention provides a pick-up method of a crystal grain, a pick-up device of the crystal grain, bonding equipment and a computer readable storage medium. The pick-up method of the crystal grains comprises the following steps: determining coordinates of a preset first gap on a wafer of a to-be-picked crystal grain; the wafer comprises a plurality of the crystal grains. A plurality of different distances exist between the crystal grains; by taking the coordinate of the first gap as a starting point, sequentially scanning according to a preset route to determine the coordinates of the plurality of crystal grains on the wafer and the row and column information of the first gap and each crystal grain; and according to the first gap and the row and column information of each crystal grain, mapping the coordinate of each crystal grain on the wafer to a standard map of the wafer so as to determine an actual map of each crystal grain on the wafer. The standard map at least records the row and column information of the first gaps and the crystal grains; and picking up a target crystal grain from the wafer according to the actual map.
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Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and in particular to a grain picking method, a grain picking device, a bonding device, and a computer-readable storage medium. Background Art

[0002] With the development of high-density packaging technology, how to quickly and accurately pick up the target die from the dicing tape is very critical. Conventional methods can locate and pick up the target die by establishing a mapping diagram of the actual position and coordinates of each die on the wafer. However, the existing method of establishing the mapping relationship between the actual position and coordinates of each die on the wafer mainly relies on manual definition and cannot be performed automatically and efficiently. In addition, this method needs to be redefined for wafers of different sizes and different cutting methods, which seriously affects the efficiency of semiconductor device processing technology.

[0003] In order to overcome the above-mentioned defects in the prior art, an improved method for picking up grains is urgently needed in the art to quickly and accurately establish an actual map of each grain on the wafer so as to quickly locate the position of each grain on the wafer. Summary of the invention

[0004] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0005] In order to overcome the above-mentioned defects of the prior art, the present invention provides a grain picking method, a grain picking device, a bonding device and a computer-readable storage medium, which can scan the coordinates of multiple grains on the wafer in sequence according to a preset route based on the coordinates of the notch features on the wafer, so as to quickly and accurately find the actual map of each grain on the wafer and quickly locate the position of each grain on the wafer.

[0006] Specifically, the above-mentioned method for picking up grains provided according to the first aspect of the present invention includes the following steps: determining the coordinates of a preset first notch on a wafer of a grain to be picked up. The wafer includes a plurality of the grains. There are a variety of different distances between the grains; starting from the coordinates of the first notch, scanning in sequence along a preset route to determine the coordinates of the plurality of grains on the wafer, as well as the row and column information of the first notch and each grain; mapping the coordinates of each grain on the wafer to a standard map of the wafer according to the first notch and the row and column information of each grain, so as to determine the actual map of each grain on the wafer. The standard map records at least the row and column information of the first notch and each grain; and picking up the target grain from the wafer according to the actual map.

[0007] Furthermore, in some embodiments of the present invention, before determining the coordinates of the first notch, the picking method further includes the following steps: fixing the wafer on a film expansion ring and cutting it to obtain a plurality of grains to be picked up; and pushing the film expansion ring up and stretching its dicing tape to stretch the distance between each of the grains to between 60 and 200 um. The distance between the plurality of grains located in the center area of ​​the wafer is smaller than the distance between the plurality of grains located in the edge area of ​​the wafer.

[0008] Furthermore, in some embodiments of the present invention, the first notch of the wafer is located on the same side as the second notch corresponding to the expansion ring. The step of determining the coordinates of the preset first notch on the wafer to be picked up includes: focusing the scanning camera to the center position of the wafer surface; translating the scanning camera along the preset direction where the second notch is located, and identifying the image scanned by it; and in response to identifying the first notch, determining the coordinates of the first notch in the wafer coordinate system according to the coordinates of the center position in the wafer coordinate system, the preset direction, and the translation amount of the scanning camera.

[0009] Furthermore, in some embodiments of the present invention, the step of taking the coordinates of the first notch as the starting point and scanning in sequence along a preset route to determine the coordinates of the plurality of grains on the wafer, as well as the row and column information of the first notch and each of the grains includes: taking the direction of the first notch toward the center position of the wafer surface as the positive direction of the Y-axis to determine the wafer coordinate system; and taking the coordinates of the first notch as the starting point and scanning in sequence along a preset serpentine route to determine the coordinates of each row of complete grains on the wafer, as well as the row and column information of the first notch and each of the complete grains.

[0010] Further, in some embodiments of the present invention, the step of scanning and determining the coordinates of the first row of complete grains above the first notch on the wafer, and the row and column information of the first notch and each of the complete grains in the first row includes: taking the coordinates of the first notch as the starting point, translating the scanning camera in the positive direction of the Y axis to identify the first transverse cutting path at the lower edge of the first row of complete grains; controlling the scanning camera to translate along the first transverse cutting path in the preset negative direction of the X axis to the edge of the wafer, and then scanning in the opposite positive direction of the X axis and identifying the lower corners of the two grains, and respectively saving the coordinates of the lower corners of each complete grain; responding After completing the scanning of the first transverse cutting path, the scanning camera is translated again in the positive direction of the Y-axis to identify the second transverse cutting path on the upper edge of the first row of complete grains; the scanning camera is controlled to translate along the second transverse cutting path in the positive direction of the X-axis to the edge of the wafer, and then scans in the negative direction of the X-axis and identifies the two upper corners of the grains, and the relative upper corner coordinates of each of the complete grains are saved respectively; and according to the relative lower corner coordinates and upper corner coordinates of each of the complete grains, the coordinates of each complete grain in the first row on the wafer, as well as the row and column information of the first notch and each complete grain in the first row are determined.

[0011] Further, in some embodiments of the present invention, the step of scanning and identifying two lower corners of the grains in the opposite positive direction of the X-axis, and respectively saving the lower corner coordinates of each complete grain therein includes: translating the scanning camera from the edge of the wafer toward the positive direction of the X-axis, and identifying the image scanned by it; in response to identifying the image of the first lower corner of the grain, recording its first lower corner coordinate; in response to identifying the image of the second lower corner of the grain, recording its second lower corner coordinate; and defining the grain that includes both the first lower corner and the second lower corner as the complete grain, and saving its first lower corner coordinate and / or second lower corner coordinate.

[0012] Further, in some embodiments of the present invention, the step of scanning and determining the coordinates of the i-th row of complete grains above the first notch on the wafer, and the row and column information of each of the complete grains in the i-th row includes: in response to completing the scanning of the second transverse cutting path of the upper edge of the i-1-th row of complete grains, translating the scanning camera again in the positive direction of the Y-axis to identify the first transverse cutting path of the lower edge of the i-th row of complete grains; controlling the scanning camera to translate along the first transverse cutting path in the negative direction of the X-axis to the edge of the wafer, and then scanning in the opposite positive direction of the X-axis and identifying the two lower corners of the grains, and saving the lower corners of each of the complete grains in the i-th row respectively. coordinates; in response to completing the scanning of the first transverse cutting path of the lower edge of the complete grains in the i-th row, translating the scanning camera again in the positive direction of the Y-axis to identify the second transverse cutting path of the upper edge of the complete grains in the i-th row; controlling the scanning camera to translate along the second transverse cutting path in the positive direction of the X-axis to the edge of the wafer, and then scanning in the negative direction of the X-axis and identifying the two upper corners of the grains, and respectively saving the relative upper corner coordinates of each of the complete grains in the i-th row; and determining the coordinates of each complete grain in the i-th row on the wafer, as well as the row and column information of each complete grain in the i-th row, according to the relative lower corner coordinates and upper corner coordinates of each complete grain.

[0013] Further, in some embodiments of the present invention, the plurality of grains in the same row have the same longitudinal distance with the corresponding grains in the adjacent row. The plurality of grains in the same column have the same lateral distance with the corresponding grains in the adjacent column. The step of taking the coordinates of the first notch as the starting point and scanning in sequence according to a preset route to determine the coordinates of the plurality of grains on the wafer, as well as the row and column information of the first notch and each grain comprises: taking the direction of the first notch toward the center position of the wafer surface as the positive direction of the Y axis to determine the wafer coordinate system; and taking the coordinates of the first notch as the starting point, scanning in sequence according to a preset cross route to determine the coordinates of each complete grain in the center row and center column on the wafer, so as to calculate the coordinates of the remaining complete grains on the wafer, and determine the row and column information of the first notch and each complete grain.

[0014] Further, in some embodiments of the present invention, the step of taking the coordinates of the first notch as the starting point and scanning in sequence along a preset cross route to determine the coordinates of each complete grain in the center row and the center column on the wafer includes: taking the coordinates of the first notch as the starting point, translating the scanning camera in the positive direction of the Y-axis to identify the relative lower corner coordinates and upper corner coordinates of each complete grain in the center column; and controlling the scanning camera to translate in the negative direction of the Y-axis to the central complete grain at the junction of the center column and the center row, and then translating it in the preset negative direction of the X-axis to the edge of the wafer, and then scanning in the opposite positive direction of the X-axis and identifying the relative lower corner coordinates and upper corner coordinates of each complete grain in the center row.

[0015] Further, in some embodiments of the present invention, the step of calculating the coordinates of the rth row and cth column complete grain on the wafer includes: calculating the X coordinate of the rth row and cth column complete grain according to the X coordinate of the central complete grain, the X coordinate of the central row and cth column complete grain, and the X coordinate of the rth row and cth column complete grain in the central column; and calculating the Y coordinate of the rth row and cth column complete grain according to the Y coordinate of the central complete grain, the Y coordinate of the central row and cth column complete grain, and the Y coordinate of the rth row and cth column complete grain in the central column.

[0016] Furthermore, in some embodiments of the present invention, the wafer is a 12-inch wafer or an 8-inch wafer. The size of each of the grains is between 0.5 mm×0.5 mm and 26 mm×33 mm. The field of view of the scanning camera is between 5 mm×5 mm and 10 mm×10 mm.

[0017] Furthermore, in some embodiments of the present invention, the standard map also records the quality information of each of the grains. The step of picking up the target grain from the wafer according to the actual map includes: selecting the target grain from the standard map according to the target quality level of the grain to be picked up; querying the actual map according to the row and column information of the target grain to determine its coordinates on the wafer; and picking up the target grain from the corresponding coordinates on the wafer via a pickup head.

[0018] In addition, the above-mentioned grain picking device provided according to the second aspect of the present invention includes a picking head, a memory and a controller. The picking head has a suction nozzle to absorb the grain to be picked up. The memory stores computer instructions. The processor is connected to the picking head and the memory, and is used to execute the computer instructions stored in the memory to implement the grain picking method provided by the first aspect of the present invention through the picking head.

[0019] In addition, the bonding device provided according to the third aspect of the present invention comprises a wafer chuck, a die picking device and a bonding device as provided in the second aspect of the present invention. The wafer chuck is used to fix the first wafer to be bonded. The die picking device is used to pick up the die to be bonded from the cut and expanded second wafer. The bonding device is used to obtain the die from the die picking device and bond it to the target position of the first wafer.

[0020] In addition, the computer-readable storage medium provided in the fourth aspect of the present invention stores computer instructions, which, when executed by a processor, implement the method for picking up a die provided in the first aspect of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0022] Figure 1 A schematic diagram showing a bonding device picking up a die according to some embodiments of the present invention is shown.

[0023] Figure 2 A schematic diagram of bonding dies using a bonding device provided according to some embodiments of the present invention is shown.

[0024] Figure 3 A schematic flow chart of a method for picking up a die according to some embodiments of the present invention is shown.

[0025] Figure 4 A schematic diagram of a wafer coordinate system provided according to some embodiments of the present invention is shown.

[0026] Figure 5 A schematic diagram of scanning each grain provided according to some embodiments of the present invention is shown.

[0027] Figure 6 A schematic diagram showing the correspondence between the position of each grain and the coordinates provided according to some embodiments of the present invention is shown.

[0028] Figure 7 A schematic diagram of scanning each grain provided according to some embodiments of the present invention is shown.

[0029] Figure 8 A schematic diagram showing the principle of calculating the coordinates of each grain provided according to some embodiments of the present invention is shown.

[0030] Fig. 9 A schematic diagram showing an actual map provided according to some embodiments of the present invention. DETAILED DESCRIPTION

[0031] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0032] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0033] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0034] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0035] As mentioned above, with the development of high-density packaging technology, how to quickly and accurately pick up the target grain from the dicing tape is very critical. Conventional methods can locate and pick up the target grain by establishing a mapping diagram of the actual position and coordinates of each grain on the wafer. However, the existing method of establishing the mapping relationship between the actual position and coordinates of each grain on the wafer mainly relies on manual definition and cannot be performed automatically and efficiently. In addition, this method needs to be redefined for wafers of different sizes and different cutting methods, which seriously affects the efficiency of semiconductor device processing technology.

[0036] In order to overcome the above-mentioned defects of the prior art, the present invention provides a grain picking method, a grain picking device, a bonding device and a computer-readable storage medium, which can scan the coordinates of multiple grains on the wafer in sequence according to a preset route based on the coordinates of the notch features on the wafer, so as to quickly and accurately find the actual map of each grain on the wafer and quickly locate the position of each grain on the wafer.

[0037] Please refer to Figure 1 and Figure 2 . Figure 1 A schematic diagram showing a bonding device picking up a die according to some embodiments of the present invention is shown. Figure 2 A schematic diagram of bonding dies using a bonding device provided according to some embodiments of the present invention is shown.

[0038] exist Figure 1 and Figure 2 In the illustrated embodiment, the bonding device provided by the third aspect of the present invention includes a wafer chuck 11, the above-mentioned die picking device and the bonding device 13 provided by the second aspect of the present invention. Here, the wafer chuck 11 is used to fix the first wafer 14 to be bonded. The die picking device is used to pick up the die to be bonded from the cut and expanded second wafer 15. The bonding device 13 is used to obtain the die from the die picking device and bond it to the target position of the first wafer 14.

[0039] Furthermore, the above-mentioned grain picking device 12 provided in the second aspect of the present invention includes a picking head, a memory and a processor. Here, the picking head has a suction nozzle to absorb the grains to be picked up. The memory includes but is not limited to the computer-readable storage medium provided in the fourth aspect, on which computer instructions are stored. The controller is connected to the processor and is configured to execute the computer instructions stored in the memory to implement the grain picking method provided in the first aspect of the present invention.

[0040] The working principle of the above-mentioned grain picking device 12 will be described below in conjunction with some embodiments of grain picking methods. Those skilled in the art will understand that these embodiments of picking methods are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than limiting all functions or all working modes of the grain picking device 12. Similarly, the grain picking device 12 is also only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on the execution subject and execution order of each step in these grain picking methods.

[0041] Please refer to Figure 3 and Figure 4 . Figure 3 A schematic flow chart of a method for picking up a die according to some embodiments of the present invention is shown. Figure 4 A schematic diagram of a wafer coordinate system provided according to some embodiments of the present invention is shown.

[0042] like Figure 3 As shown, the processor of the die picking device 12 can first determine the coordinates of the preset first notch on the wafer of the die to be picked up. Here, the wafer includes a plurality of die, and there are a variety of different distances between the die.

[0043] Specifically, if Figure 1 As shown, before determining the above-mentioned first notch, the grain picking device 12 can first fix the wafer on the expansion ring via a hardware limit workpiece and / or a robotic arm. Here, since position mapping is required later, the wafer mounting step here allows the center of the wafer to not completely coincide with the center position of the inner ring of the expansion ring, so there is no need to perform high-precision alignment separately. Afterwards, the grain picking device 12 can cut the above-mentioned wafer to obtain a plurality of grains to be picked up. Thereafter, the grain picking device 12 can push the expansion ring and stretch its dicing tape to stretch the distance between each grain to between 60 and 200 um. Here, the distance between the multiple grains located in the center area of ​​the wafer is smaller than the distance between the multiple grains located in the edge area of ​​the wafer.

[0044] Further, in Figure 4In the illustrated embodiment, the first notch 41 of the wafer is located on the same side as the second notch 42 corresponding to the expansion ring. In the process of determining the coordinates of the first notch 41 on the wafer of the grain to be picked up, the grain picking device 12 can first focus the scanning camera to the center position of the wafer surface. Afterwards, the grain picking device 12 can translate the scanning camera along the preset direction (for example: downward) where the second notch 42 is located, and identify the image scanned by it. Thereafter, in response to identifying the first notch 41, the grain picking device 12 can determine the coordinates of the first notch 41 in the wafer coordinate system based on the coordinates of the center position in the wafer coordinate system, the preset direction, and the translation amount of the scanning camera.

[0045] Please refer to Figure 5 and Figure 6 . Figure 5 A schematic diagram of scanning each grain provided according to some embodiments of the present invention is shown. Figure 6 A schematic diagram showing the correspondence between the position of each grain and the coordinates provided according to some embodiments of the present invention is shown.

[0046] Afterwards, if Figure 5 As shown, the die picking device 12 can use the coordinates of the first notch 41 as a starting point and sequentially scan along a preset route to determine the coordinates of multiple dies on the wafer, as well as the row and column information of the first notch 41 and each die.

[0047] like Figure 5 As shown, the die picking device 12 can determine the wafer coordinate system with the direction from the first notch 41 toward the center of the wafer surface as the positive direction of the Y axis, and any preset position as the origin.

[0048] Afterwards, the die picking device 12 can use the coordinates of the first notch 41 as a starting point and scan in sequence along a preset serpentine route to determine the coordinates of each row of complete die on the wafer, as well as row and column information of the first notch 41 and each complete die.

[0049] Specifically, if Figure 5 As shown, during the scanning of each die, the die picking device 12 can first use the coordinates of the first notch 41 as a starting point and translate the scanning camera in the positive direction of the Y axis to identify the first transverse cutting path at the lower edge of the first row of complete die.

[0050] Afterwards, the die picking device 12 can control the scanning camera to move along the first transverse cutting path to the preset negative direction of the X-axis (for example, the left side) to the edge of the wafer, and then scan and identify the two lower corners of the die in the opposite positive direction of the X-axis (for example, the right side), and save the lower corner coordinates of each complete die (for example, the lower left corner coordinates).

[0051] like Figure 6As shown, the die picking device 12 can translate the scanning camera from the edge of the wafer to the positive side of the X-axis and identify the image it scanned. Afterwards, in response to identifying the image of the first lower corner of the die (e.g., the lower left corner image), the die picking device 12 can record its first lower corner coordinates. Afterwards, in response to identifying the image of the second lower corner of the die (e.g., the lower right corner image), the die picking device 12 can record its second lower corner coordinates. Afterwards, the die picking device 12 can define the die including both the first lower corner and the second lower corner as a complete die, and save its first lower corner coordinates and / or second lower corner coordinates.

[0052] In addition, in some embodiments, for the grains above the center of the wafer, the grain picking device 12 can instead determine whether it is a complete grain based on whether its two upper corners are complete. Specifically, in response to the image of the first upper corner of the grain (e.g., the upper left corner image) being identified, the grain picking device 12 can record its first upper corner coordinates. Thereafter, in response to the image of the second upper corner of the grain (e.g., the upper right corner image) being identified, the grain picking device 12 can record its second upper corner coordinates. Thereafter, the grain picking device 12 can define the grain that includes both the first upper corner and the second upper corner as a complete grain, and save its first upper corner coordinates and / or second upper corner coordinates.

[0053] After that, if Figure 5 As shown, in response to completing the scanning of the first transverse cutting path, the die picking device can translate the scanning camera in the positive direction of the Y axis again to identify the second transverse cutting path of the upper edge of the first row of complete die. Afterwards, the die picking device can control the scanning camera to translate along the second transverse cutting path in the positive direction of the X axis to the edge of the wafer, and then scan and identify the two upper corners of the die in the negative direction of the X axis, and save the relative upper corner coordinates of each complete die (for example: lower right corner coordinates). Afterwards, the die picking device can determine the coordinates of each complete die in the first row on the wafer, as well as the row and column information of the first notch and each complete die in the first row, based on the relative lower corner coordinates and upper corner coordinates of each complete die.

[0054] Similarly, in the process of scanning and determining the coordinates of the i-th row of complete grains above the first notch on the wafer, and the row and column information of each complete grain in the i-th row, in response to completing the scanning of the second transverse cut path on the upper edge of the i-1-th row of complete grains, the grain picking device 12 can translate the scanning camera in the positive direction of the Y axis again to identify the first transverse cut path on the lower edge of the i-th row of complete grains. Afterwards, the grain picking device 12 can control the scanning camera to translate in the negative direction of the X axis to the edge of the wafer along the first transverse cut path, and then scan in the opposite positive direction of the X axis and identify the two lower corners of the grains, and save the lower corner coordinates of each complete grain in the i-th row respectively.

[0055] Afterwards, in response to completing the scanning of the first transverse cut line at the lower edge of the i-th row of complete dies, the die picking device 12 can translate the scanning camera again in the positive direction of the Y axis to identify the second transverse cut line at the upper edge of the i-th row of complete dies.

[0056] Afterwards, the die picking device 12 can control the scanning camera to translate along the second transverse cutting path to the edge of the wafer in the positive direction of the X-axis, and then scan in the negative direction of the X-axis to identify the two upper corners of the die, and respectively save the relative upper corner coordinates of each complete die in the i-th row.

[0057] Afterwards, the die picking device 12 can determine the coordinates of each complete die in the i-th row on the wafer and the row and column information of each complete die in the i-th row according to the relative lower corner coordinates and upper corner coordinates of each complete die.

[0058] Please refer to the following for further reference Figure 7 and Figure 8 . Figure 7 A schematic diagram of scanning each grain provided according to some embodiments of the present invention is shown. Figure 8 A schematic diagram showing the principle of calculating the coordinates of each grain provided according to some embodiments of the present invention is shown.

[0059] In some preferred embodiments, multiple dies in the same row have the same longitudinal distance from corresponding dies in adjacent rows, and multiple dies in the same column have the same lateral distance from corresponding dies in adjacent columns.

[0060] like Figure 7 As shown, the die picking device 12 can determine the wafer coordinate system by taking the direction from the first notch 41 toward the center of the wafer surface as the positive direction of the Y-axis.

[0061] Afterwards, the grain picking device 12 can use the coordinates of the first notch as the starting point, and scan in sequence along a preset cross route to determine the coordinates of each complete grain in the center row and center column on the wafer, so as to calculate the coordinates of the remaining complete grains on the wafer, and determine the row and column information of the first notch and each complete grain.

[0062] Specifically, the grain picking device 12 can use the coordinates of the first notch as a starting point and translate the scanning camera in the positive direction of the Y axis to identify the relative lower corner coordinates and upper corner coordinates of each complete grain in the center column. Afterwards, the grain picking device 12 can control the scanning camera to translate in the negative direction of the Y axis to the central complete grain at the junction of the center column and the center row, and then translate it in the preset negative direction of the X axis to the edge of the wafer, and then scan in the opposite positive direction of the X axis and identify the relative lower corner coordinates and upper corner coordinates of each complete grain in the center row.

[0063] like Figure 8As shown, in the process of calculating the coordinates of the complete die in the rth row and the cth column on the wafer, the die picking device 12 can calculate the coordinates of the complete die in the center according to the X coordinate x o , the X coordinate x of the complete grain in the center row and column c c , and the X coordinate x of the complete grain in the center column and row r r , calculate the X coordinate x of the complete grain in row r and column c t :

[0064] x t =x r -x o +x c

[0065] Similarly, the die picking device 12 can calculate the Y coordinate y of the center complete die. o , the Y coordinate y of the complete grain in the center row and column c c , and the Y coordinate y of the complete grain in the center column and row r r , calculate the Y coordinate y of the complete grain in row r and column c t :

[0066] y t =y r -y o +y c

[0067] Please refer to Fig. 9 . Fig. 9 A schematic diagram showing an actual map provided according to some embodiments of the present invention.

[0068] Afterwards, the die picking device 12 can map the coordinates of each die on the wafer to the standard map of the wafer according to the first notch and the row and column information of each die, so as to determine the actual map of each die on the wafer. Here, the standard map records at least the first notch and the row and column information of each die.

[0069] Afterwards, the die picking device 12 may pick up target die from the wafer according to the actual map.

[0070] Furthermore, the wafer is a 12-inch wafer or an 8-inch wafer, the size of each grain is between 0.5mm×0.5mm and 26mm×33mm, and the field of view of the scanning camera is between 5mm×5mm and 10mm×10mm.

[0071] In addition, in some preferred embodiments, the standard map also records the quality information of each grain. The quality information can be divided into only two levels, good and bad, or divided into three or more levels, such as excellent, qualified, and unqualified, according to the quality.

[0072] exist Fig. 9In the illustrated embodiment, incomplete residual grains and vacant positions at the edge of the wafer are filled with “·”, grains of good quality are represented by “1”, and grains of poor quality are represented by “A”.

[0073] Specifically, in the process of picking up the target grain, the grain picking device 12 can select the target grain from the standard map according to the target quality level of the grain to be picked up. Afterwards, the grain picking device 12 can query the actual map according to the row and column information of the target grain to determine its coordinates on the wafer. Afterwards, the grain picking device 12 can pick up the target grain from the corresponding coordinates on the wafer via the picking head.

[0074] In summary, the above-mentioned grain picking method, grain picking device, bonding equipment and computer-readable storage medium provided by the present invention can scan the coordinates of multiple grains on the wafer in sequence according to a preset route based on the coordinates of the notch features on the wafer, so as to quickly and accurately find the actual map of each grain on the wafer and quickly locate the position of each grain on the wafer.

[0075] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0076] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in a RAM memory, a flash memory, a ROM memory, an EPROM memory, an EEPROM memory, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor so that the processor can read and write information from / to the storage medium. In an alternative, a storage medium may be integrated into a processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and the storage medium may reside in a user terminal as discrete components.

[0077] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented as a computer program product in software, each function may be stored on or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Storage media may be any available medium that can be accessed by a computer. As an example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, disk storage or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, a server, or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of the medium. Disk and disc as used herein include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, wherein disk often reproduces data magnetically, while disc reproduces data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0078] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for picking up grains, characterized in that: The following steps are involved: Determine the coordinates of a preset first notch on a wafer for picking up a die, wherein the wafer includes a plurality of the die, and a plurality of different distances are involved between the die; Taking the coordinates of the first notch as a starting point, sequentially scanning along a preset route to determine the coordinates of the plurality of grains on the wafer, as well as row and column information of the first notch and each grain; According to the first notch and the row and column information of each of the grains, the coordinates of each of the grains on the wafer are mapped to a standard map of the wafer to determine an actual map of each of the grains on the wafer, wherein the standard map records at least the first notch and the row and column information of each of the grains; and According to the actual map, a target die is picked up from the wafer.

2. The picking method according to claim 1, characterized in that: Before determining the coordinates of the first notch, the picking method further comprises the following steps: Fixing the wafer on a film expansion ring and cutting it to obtain a plurality of dies to be picked up; and The film expansion ring is pushed up and its dicing tape is stretched to stretch the distance between each of the grains to between 60 and 200 um, wherein the distance between the plurality of grains located in the center area of ​​the wafer is smaller than the distance between the plurality of grains located in the edge area of ​​the wafer.

3. The picking method according to claim 2, characterized in that: The first notch of the wafer is located on the same side of the second notch corresponding to the film expansion ring, and the step of determining the coordinates of the preset first notch on the wafer to be picked up includes: focusing a scanning camera to a center position of the wafer surface; Translating the scanning camera along a preset direction where the second notch is located, and identifying the image scanned by the scanning camera; and In response to identifying the first notch, the coordinates of the first notch in the wafer coordinate system are determined according to the coordinates of the center position in the wafer coordinate system, the preset direction, and the translation amount of the scanning camera.

4. The picking method according to claim 1, characterized in that: The step of taking the coordinates of the first notch as a starting point and scanning in sequence along a preset route to determine the coordinates of the plurality of grains on the wafer, as well as the row and column information of the first notch and each grain comprises: Determine the wafer coordinate system by taking the direction of the first notch toward the center of the wafer surface as the positive direction of the Y-axis; and Taking the coordinates of the first notch as a starting point, the coordinates of each row of complete grains on the wafer, as well as row and column information of the first notch and each complete grain are scanned in sequence according to a preset serpentine route.

5. The picking method according to claim 4, characterized in that: The step of scanning and determining the coordinates of the first row of complete grains above the first notch on the wafer, and the row and column information of the first notch and each of the complete grains in the first row comprises: Taking the coordinates of the first notch as a starting point, the scanning camera is translated in the positive direction of the Y axis to identify a first transverse cut line at the lower edge of the first row of complete grains; Control the scanning camera to translate along the first transverse cutting path in a preset negative direction of the X-axis to the edge of the wafer, and then scan in the opposite positive direction of the X-axis to identify the lower corners of the two grains, and respectively save the lower corner coordinates of each complete grain; In response to completing the scanning of the first transverse scribe line, translating the scanning camera again toward the positive direction of the Y axis to identify a second transverse scribe line at the upper edge of the first row of complete dies; Controlling the scanning camera to translate along the second transverse cutting path in the positive direction of the X-axis to the edge of the wafer, and then scanning in the negative direction of the X-axis to identify two upper corners of the grains, and respectively saving the upper corner coordinates of the complete grains; and The coordinates of the complete grains in the first row on the wafer, and the row and column information of the first notch and the complete grains in the first row are determined according to the relative lower corner coordinates and upper corner coordinates of the complete grains.

6. The picking method according to claim 5, characterized in that: The step of scanning and identifying the lower corners of two grains in the opposite positive direction of the X-axis and respectively saving the lower corner coordinates of each complete grain includes: The scanning camera is translated from the edge of the wafer toward the positive side of the X-axis, and the scanned image is recognized; In response to the image identifying the first lower corner of the grain, recording the coordinates of the first lower corner thereof; In response to the image identifying the second lower corner of the die, recording the coordinates of the second lower corner thereof; and A grain including both the first lower corner and the second lower corner is defined as the complete grain, and the coordinates of the first lower corner and / or the second lower corner are saved.

7. The picking method according to claim 5, characterized in that: The step of scanning and determining the coordinates of the i-th row of complete grains above the first notch on the wafer, and the row and column information of each of the i-th row of complete grains comprises: In response to completing the scanning of the second transverse cut line on the upper edge of the i-1th row of complete dies, translating the scanning camera again in the positive direction of the Y axis to identify the first transverse cut line on the lower edge of the i-th row of complete dies; Control the scanning camera to translate along the first transverse cutting path in the negative direction of the X-axis to the edge of the wafer, and then scan in the opposite positive direction of the X-axis to identify the lower corners of two grains, and respectively save the lower corner coordinates of each of the complete grains in the i-th row; In response to completing the scanning of the first transverse cut line at the lower edge of the i-th row of complete dies, translating the scanning camera again in the positive direction of the Y axis to identify the second transverse cut line at the upper edge of the i-th row of complete dies; Control the scanning camera to translate along the second transverse cutting path in the positive direction of the X-axis to the edge of the wafer, and then scan in the negative direction of the X-axis to identify two upper corners of the grains, and respectively save the relative upper corner coordinates of each of the complete grains in the i-th row; and According to the relative lower corner coordinates and upper corner coordinates of each complete grain, the coordinates of each complete grain in the i-th row on the wafer and the row and column information of each complete grain in the i-th row are determined.

8. The picking method according to claim 1, characterized in that: The plurality of grains in the same row have the same longitudinal distance with the corresponding grains in the adjacent row, and the plurality of grains in the same column have the same lateral distance with the corresponding grains in the adjacent column. The step of taking the coordinates of the first notch as the starting point and sequentially scanning along a preset route to determine the coordinates of the plurality of grains on the wafer, as well as the row and column information of the first notch and each grain comprises: Determine the wafer coordinate system by taking the direction of the first notch toward the center of the wafer surface as the positive direction of the Y-axis; and Taking the coordinates of the first notch as the starting point, the coordinates of each complete grain in the center row and center column on the wafer are scanned in sequence according to a preset cross route to calculate the coordinates of the remaining complete grains on the wafer, and determine the row and column information of the first notch and each complete grain.

9. The picking method according to claim 8, characterized in that: The step of taking the coordinates of the first notch as a starting point and scanning in sequence along a preset cross route to determine the coordinates of each complete grain in the center row and center column on the wafer comprises: Taking the coordinates of the first notch as a starting point, the scanning camera is translated in the positive direction of the Y axis to identify the relative lower corner coordinates and upper corner coordinates of each complete grain in the center column; and The scanning camera is controlled to translate in the negative direction of the Y axis to the central complete grain at the junction of the central column and the central row, and then translated in the preset negative direction of the X axis to the edge of the wafer, and then scanned in the opposite positive direction of the X axis and identified the relative lower corner coordinates and upper corner coordinates of each complete grain in the central row.

10. The picking method according to claim 8, characterized in that: The step of calculating the coordinates of the complete die in the rth row and cth column on the wafer comprises: Calculating the X coordinate of the complete grain in the rth row and cth column according to the X coordinate of the central complete grain, the X coordinate of the complete grain in the cth column of the central row, and the X coordinate of the complete grain in the rth row of the central column; and The Y coordinate of the complete grain in the rth row and cth column is calculated according to the Y coordinate of the central complete grain, the Y coordinate of the complete grain in the cth column of the central row, and the Y coordinate of the complete grain in the rth row of the central column.

11. The picking method according to claim 4 or 8, characterized in that: The wafer is a 12-inch wafer or an 8-inch wafer, the size of each of the crystal grains is between 0.5mm×0.5mm and 26mm×33mm, and the field of view of the scanning camera is between 5mm×5mm and 10mm×10mm.

12. The picking method according to claim 1, characterized in that: The standard map also records the quality information of each of the dies. The step of picking up the target dies from the wafer according to the actual map includes: Selecting target grains from the standard map according to the target quality grade of the grains to be picked up; According to the row and column information of the target crystal grain, query the actual map to determine its coordinates on the wafer; and The target die is picked up from the corresponding coordinates on the wafer via a pick-up head.

13. A grain picking device, characterized in that: include: A pick-up head having a suction nozzle for sucking the grains to be picked up; a memory having computer instructions stored thereon; as well as A processor is connected to the pick-up head and the memory, and is used to execute computer instructions stored in the memory to implement the method for picking up a die according to any one of claims 1 to 12 via the pick-up head.

14. A bonding device, characterized in that: include: A wafer chuck, used to fix a first wafer to be bonded; The die picking device as claimed in claim 13, used to pick up the die to be bonded from the cut and expanded second wafer; and A bonding device is used to obtain the die from the die picking device and bond it to a target position of the first wafer.

15. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the die picking method according to any one of claims 1 to 12 is implemented.