Three-dimensional packaged double-sided heat dissipation power module

Abstract

The invention relates to the technical field of packaging of power electronic devices, in particular to a three-dimensional packaged double-sided heat dissipation power module. The structure comprises an upper active metal brazing base material substrate and a lower active metal brazing base material substrate, a plurality of silicon carbide MOSFET chips, conductive strips and an inserter used for fixing the chips are arranged between the upper active metal brazing base material substrate and the lower active metal brazing base material substrate, the upper half-bridge chip is annularly arranged around a direct-current positive terminal, the lower half-bridge chip is annularly arranged around a direct-current negative terminal, and heat dissipation channels are formed in the upper surface and the lower surface of each chip. The impedance of branches is controlled to be equal, the current of each branch chip is balanced, the distance and layout of the chips are optimized, the overall loop area is reduced, the parasitic stray inductance of the module is reduced, in addition, the chips and the substrate are connected in a crimping mode, the chips and the copper columns are in contact through pressure to achieve electric heat conduction, the crimping materials are graphene sheets and molybdenum sheets, and the cost is low. Good contact between the chip and the copper columns is ensured, and contact resistance and thermal resistance are reduced. According to the invention, the effects of improving the heat dissipation efficiency, reducing parasitic stray inductance, balancing the current distribution of the parallel chips, and enhancing the module reliability and the conversion efficiency are achieved.

Description

Technical Field

[0001] The present application relates to the technical field of packaging of power electronic devices, and in particular to a three-dimensionally packaged double-sided heat dissipation power module. Background Art

[0002] Power modules can realize DC / AC energy conversion, drive and control, and are crucial components in DC / DC inverters, motor drives and other power converters. In recent years, with the rapid development of new energy vehicles and photovoltaic industries, the demand for power modules with high power density and high conversion efficiency has increased. In particular, the widespread application of third-generation semiconductor devices, silicon carbide (SiC), in power modules has further promoted the miniaturization and high efficiency of power modules. However, the existing module design still faces some challenges, especially in terms of parasitic inductance and heat dissipation efficiency, which limit the full performance of SiC chips. Traditional power module packaging generally adopts single-sided heat dissipation, the chip is welded or sintered on the substrate, and the heat can only be transferred to the heat sink through the heat dissipation substrate at the bottom. Although this design is simple, it cannot effectively deal with voltage overshoot and oscillation problems during high-speed switching due to large parasitic inductance. In addition, due to the limitations of single-sided heat dissipation, the operating temperature of the chip is high, which easily leads to aging and failure of the module. In order to improve this situation, the industry has gradually turned to the design of double-sided heat dissipation, by eliminating metal bonding wires, welding or sintering both sides of the chip to the heat dissipation substrate, and providing heat dissipation channels for the upper and lower surfaces of the chip. This design can not only significantly reduce the parasitic inductance of the module, but also improve the thermal performance of the module, so that the module has higher conversion efficiency and better reliability. Although some progress has been made in the design of double-sided heat dissipation, there are still some shortcomings. For example, the internal chip position layout in some designs is not optimized, resulting in the overall parasitic inductance is still large, especially in the case of multiple chips in parallel, the current and temperature distribution between the parallel chips cannot be guaranteed to be uniform, which causes excessive local stress and accelerates the failure of the module. In addition, the solder is prone to failure due to thermal expansion and contraction during the high and low temperature cycle when welding on both sides, further reducing the reliability of the module. Therefore, how to further optimize the chip layout and connection method while maintaining the advantages of double-sided heat dissipation has become a technical problem that needs to be solved urgently. Summary of the invention

[0003] In order to maintain the advantages of double-sided heat dissipation while further optimizing chip layout and connection methods, the present application provides a three-dimensional packaged double-sided heat dissipation power module.

[0004] The present application provides a three-dimensional packaged double-sided heat dissipation power module adopts the following technical solution: A three-dimensionally packaged double-sided heat dissipation power module comprises two upper and lower active metal brazing base (AMB) substrates, a plurality of silicon carbide MOSFET chips are arranged in the middle, conductive strips and an inserter for fixing the chips, wherein a plurality of upper half-bridge chips are arranged in a ring around a DC positive terminal, the drain of the chip is connected to the upper substrate, the source of the chip is connected to the lower substrate through a metal block, a plurality of lower half-bridge chips are arranged in a ring around a DC negative terminal, the drain of the chip is connected to the lower substrate, the source of the chip is connected to the upper substrate through a metal block, the upper and lower surfaces of the chip are provided with heat dissipation channels, and the current of each branch chip is balanced by controlling the branch impedance to be equal, thereby reducing parasitic inductance.

[0005] By adopting the above technical solution, the parallel chips are placed in a ring around the terminals so that the impedance of each branch chip is equal, thereby achieving uniform current distribution, avoiding the problem of excessive local current density, and improving the reliability and service life of the module. By optimizing the chip spacing and layout, the overall loop area is reduced, and the parasitic inductance of the module is significantly reduced from the traditional 10nH to 5.1nH, reducing the voltage overshoot and oscillation of the SiC device during high-speed switching, and improving the conversion efficiency of the module. There are heat dissipation channels on the upper and lower surfaces of the chip, which effectively disperse the heat generated by the chip, improve the heat dissipation performance of the module, make the operating temperature lower, and extend the life of the module. Through compact design, the volume of the entire module is greatly reduced, which is conducive to integrating more functions in a limited space and adapting to the application requirements of high power density. The chip layout and heat dissipation design are optimized, so that the performance of the module in a high temperature environment is more stable, avoiding the failure problem of solder in high and low temperature cycles, and improving the long-term reliability of the module.

[0006] Preferably, the chip and substrate are connected in the form of crimping, and pressure is used to make the chip and copper pillar contact to achieve electrical heat conduction. The crimping material is a graphene sheet or a molybdenum sheet, which is respectively located on the upper and lower surfaces of the chip. The chip, crimping material and copper pillar are brought into close contact through bolts or pressure devices.

[0007] By adopting the above technical solution, the connection between the chip and the substrate is in the form of crimping, and the chip and the copper pillar are brought into contact by pressure to achieve electrical heat conduction. The crimping material is a graphene sheet or a molybdenum sheet. The graphene sheet is arranged on the upper and lower surfaces of the chip, or the molybdenum sheet is arranged on the upper and lower surfaces of the chip. The chip and the copper pillar are in close contact through bolts or pressure devices. This method can avoid solder failure in high temperature environments and improve the reliability of the module. The graphene sheet not only has excellent electrical and thermal conductivity, but also has a certain elasticity, can effectively absorb thermal stress, and balance the stress distribution inside the module, thereby further improving the thermal performance and mechanical stability of the module.

[0008] Preferably, the crimping material can be a molybdenum sheet, a graphene sheet, and other materials that can conduct electricity and heat. The thickness of the graphene sheet and the molybdenum sheet is 0.1mm to 1mm, ensuring good contact between the chip and the copper column, reducing contact resistance and thermal resistance. By adopting the above technical solution, the thickness of the graphene sheet and the molybdenum sheet is controlled within the range of 0.1mm to 0.3mm, ensuring good contact between the chip and the copper column, reducing contact resistance and thermal resistance, thereby improving the electrothermal performance and reliability of the module. Specifically, the thickness of the graphene sheet and the molybdenum sheet is moderate, which not only ensures sufficient mechanical strength and elasticity, but also effectively reduces the resistance and thermal resistance of the contact interface, reduces energy consumption and heat generation when the module is working, and improves the conversion efficiency and service life of the module.

[0009] Preferably, the inserter is a ceramic structure with grooves and holes processed inside for fixing the chip and copper pillars. The material includes aluminum oxide or aluminum nitride and is processed by 3D printing or high-temperature co-firing. By adopting the above technical solution, the ceramic structure of the inserter not only provides good mechanical strength and heat resistance, but also ensures the stable fixation of the chip and copper pillars through the grooves and holes processed inside, reduces the displacement and vibration of the chip during operation, and thus improves the reliability of the module. In addition, the use of 3D printing or high-temperature co-firing technology has significantly improved the manufacturing accuracy and consistency of the inserter, further ensuring the electrical connection and thermal conductivity inside the module.

[0010] Preferably, the size of the groove of the inserter matches the size of the chip to ensure stable fixation of the chip and the copper pillar. By adopting the above technical solution, the depth of the groove of the inserter is 0.5mm to 1.5mm, and the diameter of the hole is 1mm to 3mm, which ensures stable fixation of the chip and the copper pillar, thereby improving the mechanical stability of the module, reducing the problem of poor electrical contact caused by loose chips, and further improving the reliability and service life of the module.

[0011] Preferably, a series of pins are welded or sintered at one end of the substrate for connecting to an external control circuit and transmitting control signals to the chip gate. The number of pins is 10 to 20, and the pin spacing is 2 mm to 4 mm. By adopting the above technical solution, the number of pins is 10 to 20, and the pin spacing is 2 mm to 4 mm, which can effectively connect to the external control circuit, transmit the control signal to the chip gate, and ensure the reliability and stability of signal transmission. At the same time, the reasonable design of the number and spacing of pins is conducive to improving the integration of the module, reducing the occupied space, and facilitating the installation and maintenance of the module.

[0012] Preferably, the radiator is installed on the upper metal layer of the upper substrate and the lower metal layer of the substrate, and the heat dissipation method includes natural air cooling, forced air cooling or liquid cooling. The material of the radiator is aluminum alloy or copper alloy, and the height of the heat sink is 10mm to 20mm, and the width is 5mm to 10mm. By adopting the above technical solution, the radiator is installed on the upper metal layer of the upper substrate and the lower metal layer of the substrate, realizing the double-sided heat dissipation function and significantly enhancing the heat dissipation performance of the power module. The heat dissipation method includes natural air cooling, forced air cooling or liquid cooling, which adapts to a variety of heat dissipation requirements. The radiator material is selected from aluminum alloy or copper alloy to ensure good thermal conductivity. The height of the heat sink is 10mm to 20mm, and the width is 5mm to 10mm, which increases the heat dissipation area and improves the heat dissipation efficiency.

[0013] Preferably, threaded holes are machined on the four corners of the radiator, and the upper and lower radiators are controlled by bolts to control the spacing, providing pressure to the entire module. The diameter of the bolts is 3mm to 5mm, and the depth of the threaded holes is 5mm to 10mm. By adopting the above technical solution, threaded holes are machined on the four corners of the radiator, and the upper and lower radiators are controlled by bolts to control the spacing, providing pressure to the entire module, ensuring close contact between the chip and the copper column, reducing contact resistance and thermal resistance, and improving the electrical and thermal performance and reliability of the module. The diameter of the bolts is 3mm to 5mm, and the depth of the threaded holes is 5mm to 10mm, ensuring the stability of the bolts and the mechanical strength of the module, and avoiding loosening in high temperature and vibration environments.

[0014] Preferably, the chip spacing can achieve the lowest overall inductance and the lowest current difference by optimizing the chip spacing. Specifically, the left and right spacing of the parallel chips is 3mm to 5mm, and the upper and lower spacing is 4mm to 6mm. By adopting the above technical solution, the chip spacing is optimized to achieve the lowest overall inductance and the lowest current difference. The specific chip spacing is 3mm to 5mm, and the height is 4mm to 6mm, which effectively reduces the parasitic inductance of the module, reduces the voltage overshoot and oscillation during the switching process, and improves the conversion efficiency and stability of the module. At the same time, the optimized chip spacing makes the current distribution of the parallel chips more uniform, reduces local stress concentration, and improves the reliability and service life of the module.

[0015] Preferably, the substrate material is an AMB substrate of copper-coated aluminum nitride or copper-coated aluminum oxide, or a directly copper-coated ceramic substrate, the thickness of the substrate is 1mm to 2mm, and the thickness of the copper layer is 0.1mm to 0.3mm. By adopting the above technical solution, the substrate material is selected from an AMB substrate of copper-coated aluminum nitride or copper-coated aluminum oxide, or a directly copper-coated ceramic substrate, which can significantly improve the thermal conductivity and reliability of the substrate. The thickness of the substrate is set to 1mm to 2mm, which ensures the mechanical strength and stability of the substrate and reduces thermal resistance. The thickness of the copper layer is set to 0.1mm to 0.3mm, which not only ensures good electrical conductivity, but also reduces the overall weight and cost of the substrate. These optimization measures jointly improve the thermal management and electrical performance of the module, and enhance the reliability and service life of the module.

[0016] In summary, the present application includes at least one of the following beneficial technical effects: 1. By placing the parallel chips in a ring around the terminals and controlling the branch impedance to be equal, the current of each branch chip is balanced, solving the problem of uneven current and temperature distribution between parallel chips, and improving the reliability and stability of the module; 2. By reducing the overall loop area, the parasitic inductance of the module is significantly reduced to 5.1nH, which effectively reduces the voltage overshoot and oscillation of SiC devices during high-speed switching, and improves the conversion efficiency and thermal performance of the module; 3. Using crimping instead of welding, using graphene sheets and molybdenum sheets as crimping materials, effectively reducing the thermal resistance and stress distribution of the module, improving the reliability of the module in high and low temperature cycles, and avoiding the problem of solder failure; 4. Heat is dissipated through the AMB substrate and copper pillars on both sides of the chip, achieving double-sided heat dissipation. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a structural diagram of a three-dimensional packaged double-sided heat dissipation power module according to an embodiment of the present application.

[0018] Figure 2 It is an exploded view of a three-dimensionally packaged double-sided heat dissipation power module according to an embodiment of the present application.

[0019] Figure 3 This is a comparison diagram of the current density distribution of a three-dimensionally packaged double-sided heat dissipation power module according to an embodiment of the present application.

[0020] Figure 4 This is a comparison diagram of chip stress distribution of a three-dimensional packaged double-sided heat dissipation power module according to an embodiment of the present application.

[0021] Figure 5 It is a step diagram of a method for manufacturing a three-dimensional packaged double-sided heat dissipation power module according to an embodiment of the present application.

[0022] Explanation of the accompanying drawings: 1. substrate; 2. chip. DETAILED DESCRIPTION

[0023] The following is combined with Figure 1-5 This application is described in further detail.

[0024] The present application embodiment discloses a three-dimensional packaged double-sided heat dissipation power module. Figure 1 and Figure 2 The three-dimensional packaged double-sided heat dissipation power module includes two upper and lower active metal brazing base (AMB) substrates 1, a plurality of silicon carbide (SiC) MOSFET chips 2, conductive strips and inserters for fixing the chips 2 are arranged in the middle. Among them, the upper half-bridge chips 2 (two) are arranged in a ring around the DC positive (DC+) terminal, the drain (Drain) of the chip 2 is connected to the upper substrate 1, and the source (Source) of the chip 2 is connected to the lower substrate 1 through a metal block, and the lower half-bridge chips 2 (two) are arranged in a ring around the DC negative (DC-) terminal, the drain (Drain) of the chip 2 is connected to the lower substrate 1, and the source (Source) of the chip 2 is connected to the upper substrate 1 through a metal block. The upper and lower surfaces of the chip 2 have heat dissipation channels, and the current of the parallel chip 2 in each branch is balanced by controlling the branch impedance to be equal, reducing parasitic inductance, and achieving the effect of reducing the module parasitic inductance, improving the module thermal performance, and extending the module life.

[0025] Specifically, the upper substrate 1 and the lower substrate 1 include an active metal brazing base (AMB) substrate 1, the material of which can be copper-clad aluminum nitride or copper-clad aluminum oxide, the thickness of the substrate 1 is 1 mm to 2 mm, and the thickness of the copper layer is 0.1 mm to 0.3 mm. A series of pins are welded or sintered at one end of the substrate 1 for connecting an external control circuit and transmitting control signals to the gate of the chip 2. The number of pins is 10 to 20, and the pin spacing is 2 mm to 4 mm.

[0026] The chip 2 includes a silicon carbide (SiC) MOSFET chip 2, and the specific size can be adjusted according to the actual application requirements. The spacing of the chip 2 can be optimized to achieve the lowest overall inductance and the lowest current difference. Specifically, the chip 2 spacing is 3mm to 5mm, and the height is 4mm to 6mm.

[0027] The connection between the substrate 1 and the chip 2 can be welding, sintering or crimping. Welding and sintering use solder or sintered silver paste to weld the drain of chip 2 to the copper sheet of substrate 1, and the source of chip 2 is sintered with a metal block (copper or molybdenum, etc.), and the other end of the metal block is sintered on the second substrate 1. Crimping is to make the metal block, chip 2, and substrate 1 fit tightly to form contact through external bolts or pressure devices. This embodiment shows the crimping form, and the crimping parts used are fuzzbutton (fuzz button) and GF (graphene sheet). The fuzzbutton connects the gate of chip 2 to transmit signals, and graphite sheets of different sizes connect the source and drain of chip 2 respectively. Because the graphite sheet can conduct electricity and heat and has a certain elasticity, compared with the molybdenum sheet in traditional crimping, it can effectively reduce the thermal resistance of the module and balance the internal stress.

[0028] The conductive strip can be a copper column, a wool button or a terminal, and the material is copper or other metals with good conductivity. The size and shape of the conductive strip can be designed according to specific needs. For example, the diameter of the copper column is 1mm to 3mm and the length is 5mm to 10mm.

[0029] The inserter is a ceramic structure with grooves and holes processed inside for fixing the chip 2 and the copper pillar. The material includes alumina or aluminum nitride and is processed by 3D printing or high-temperature co-firing. The groove depth of the inserter is 0.5mm to 1.5mm, and the hole diameter is 1mm to 3mm, ensuring the stable fixation of the chip 2 and the copper pillar. The design of the grooves and holes ensures the stable fixation of the chip 2 and the copper pillar, reduces the vibration and displacement of the chip 2 during operation, and thus improves the reliability and stability of the module.

[0030] The radiator is installed on the upper metal layer of the upper substrate 1 and the lower metal layer of the substrate 1, and is fixed by bolts to provide pressure to the entire module. The heat dissipation methods include natural air cooling, forced air cooling or liquid cooling to adapt to different application scenarios and heat dissipation requirements. For liquid-cooled radiators, the internal design has a fin-type structure and other special shape structures to increase the heat dissipation contact area and improve the heat dissipation capacity. The radiator is made of aluminum alloy or copper alloy, and the height of the heat sink is 10mm to 20mm and the width is 5mm to 10mm. There are threaded holes on the four corners of the radiator. The upper and lower radiators are controlled by bolts to control the spacing and provide pressure to the entire module. The diameter of the bolts is 3mm to 5mm, and the depth of the threaded holes is 5mm to 10mm.

[0031] Reference Figure 3 In the existing packaging, the chips 2 are mostly arranged in a straight line. The current density distribution under different layouts is calculated by simulation, as follows: when the chips 2 are of the same size and arranged in a straight line, the current density of the chip 2 close to the terminal is large, and the current density of the chip 2 far away from the terminal is small. In the present invention, the current density of the chip 2 is approximately equal.

[0032] Reference Figure 4 , Figure 4 : It is a stress distribution diagram. Through double pulse test, the parasitic inductance of the embodiment is only 5.1 nH, which is much lower than the existing commercial modules. Compared with the crimping and molybdenum sheet, the graphene sheet in the embodiment can effectively balance the stress distribution and reduce the overall stress value.

[0033] Reference Figure 5 , the specific manufacturing process is as follows: S1: Printing solder paste onto the AMB substrate.

[0034] S2: Solder the pins, terminals, copper pillars, etc. to the substrate at high temperature.

[0035] S3: Place the chip, graphene sheet and fur button in the interposer, and the connector transmits signals and conducts current between the substrates. S4: Assemble the interposer and substrate together, install two heat sinks on both sides of the module, and fill the gap between the substrate and the heat sink with silicone grease. S5: Install the screws on the heat sink and tighten them as much as possible to provide sufficient clamping force. S6: The total size of the half-bridge power module after installation is less than a specific size, ensuring that all components are firmly installed without looseness.

[0036] Through the above steps, the manufactured three-dimensional packaged double-sided heat dissipation power module has good electrothermal characteristics, small overall package size, uniform current and stress distribution inside the chip, improved module reliability, low parasitic inductance of the entire module, small switching oscillation, which helps to improve the module conversion efficiency. Compared with welding, press-fit packaging uses pressure instead of solder, which avoids solder failure at high temperatures and has higher reliability.

[0037] The implementation principle of a three-dimensional packaged double-sided heat dissipation power module in the embodiment of the present application is: By placing the parallel chips in a ring around the terminals, controlling the branch impedance to be equal, and balancing the current of each branch chip, the problem of uneven current and temperature distribution between the parallel chips is solved, thereby improving the reliability and efficiency of the module. Graphene sheets and molybdenum sheets are used as pressing materials, and the chips and copper pillars are closely contacted through bolts or pressure devices to form a good electrical and thermal conduction path. The elastic properties of the graphene sheets effectively absorb thermal stress, reduce stress concentration inside the module, and improve the thermal performance and reliability of the module. The heat sink is installed on the upper and lower metal layers of the substrate and fixed by bolts to provide pressure to the entire module to ensure good heat dissipation. The design of the heat sink takes into account a variety of heat dissipation methods, including natural air cooling, forced air cooling or liquid cooling, to adapt to different application scenarios and heat dissipation requirements. By optimizing the chip layout, using press-fit packaging and reasonably designing the heat sink, the existing power module effectively solves the problems of large parasitic inductance and low heat dissipation efficiency, and improves the conversion efficiency and reliability of the module.

[0038] The above are all preferred embodiments of the present application, and the protection scope of the present application is not limited thereto. Therefore, any equivalent changes made according to the structure, shape, and principle of the present application should be included in the protection scope of the present application.

Claims

1. A three-dimensional packaged double-sided heat dissipation power module, characterized in that: The invention comprises two upper and lower active metal brazing base (AMB) substrates (1), a plurality of silicon carbide MOSFET chips (2) arranged in the middle, conductive strips and an inserter for fixing the chips (2), wherein a plurality of upper half-bridge chips (2) are arranged in a ring around a DC positive terminal, a drain of the chip (2) is connected to the upper substrate (1), a source of the chip (2) is connected to the lower substrate (1) through a metal block, a plurality of lower half-bridge chips (2) are arranged in a ring around a DC negative terminal, a drain of the chip (2) is connected to the lower substrate (1), a source of the chip (2) is connected to the upper substrate (1) through a metal block, and the upper and lower surfaces of the chip (2) are provided with heat dissipation channels, and the current of each branch chip (2) is balanced by controlling the branch impedance to be equal, thereby reducing parasitic inductance.

2. The three-dimensional packaged double-sided heat dissipation power module according to claim 1, characterized in that: The chip (2) and the substrate (1) are connected in a crimping form, and pressure is used to bring the chip (2) and the copper column into contact to achieve electrical heat conduction. The crimping material is a graphene sheet or a molybdenum sheet, which is located on the upper and lower surfaces of the chip, respectively. Bolts or a pressure device are used to bring the chip (2), the crimping material and the copper column into close contact.

3. The three-dimensional packaged double-sided heat dissipation power module according to claim 1, characterized in that: The crimping material may be a molybdenum sheet, a graphene sheet, or other materials capable of conducting electricity and heat. The thickness of the graphene sheet and the molybdenum sheet are both 0.1 mm to 1 mm, ensuring good contact between the chip (2) and the copper column and reducing contact resistance and thermal resistance.

4. The three-dimensional packaged double-sided heat dissipation power module according to claim 1, characterized in that: The inserter is a ceramic structure with grooves and holes processed inside for fixing the chip (2) and the copper column. The material includes aluminum oxide or aluminum nitride and is processed by 3D printing or high-temperature co-firing process.

5. The three-dimensional packaged double-sided heat dissipation power module according to claim 1, characterized in that: The size of the groove of the inserter matches the size of the chip, ensuring stable fixation of the chip (2) and the copper column.

6. The three-dimensional packaged double-sided heat dissipation power module according to claim 1, characterized in that: A series of pins are welded or sintered on one end of the substrate (1) for connecting to an external control circuit and transmitting control signals to the gate of the chip (2). The number of the pins is 10 to 20 and the pin spacing is 2 mm to 4 mm.

7. The three-dimensional packaged double-sided heat dissipation power module according to claim 1, characterized in that: The radiator is mounted on the upper metal layer of the upper substrate (1) and the lower metal layer of the substrate (1); the heat dissipation method includes natural air cooling, forced air cooling or liquid cooling; the radiator is made of aluminum alloy or copper alloy; the height of the heat sink is 10 mm to 20 mm, and the width is 5 mm to 10 mm.

8. The three-dimensional packaged double-sided heat dissipation power module according to claim 1, characterized in that: The four corners of the radiator are processed with threaded holes, and the upper and lower radiators are controlled in spacing by bolts to provide pressure to the entire module. The diameter of the bolts is 3mm to 5mm, and the depth of the threaded holes is 5mm to 10mm.

9. The three-dimensional packaged double-sided heat dissipation power module according to claim 1, characterized in that: The spacing of the chips (2) can be optimized to achieve the lowest overall inductance and the lowest current phase difference. Specifically, the left-right spacing of the chips (2) connected in parallel is 3 mm to 5 mm, and the top-bottom spacing is 4 mm to 6 mm.

10. The three-dimensional packaged double-sided heat dissipation power module according to claim 1, characterized in that: The substrate (1) is made of a copper-clad aluminum nitride or copper-clad aluminum oxide AMB substrate (1), or a directly copper-clad ceramic substrate (1); the thickness of the substrate (1) is 1 mm to 2 mm, and the thickness of the copper layer is 0.1 mm to 0.3 mm.

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