A laser assembly structure

Abstract

The application discloses a laser assembly structure, comprising: a laser module, a lens module, an amplifier module, a heat sink, a semiconductor refrigeration controller, a gas-tight tube shell and a metalized FA optical fiber; wherein the laser module, the lens module and the amplifier module are all attached on the heat sink; the heat sink is arranged on the semiconductor refrigeration controller; the semiconductor refrigeration controller is arranged in the gas-tight tube shell; one end of the metalized FA optical fiber is connected with the heat sink through the gas-tight tube shell.

Description

Technical Field

[0001] This invention belongs to the field of optoelectronic technology, and particularly relates to a laser component structure. Background Technology

[0002] With the rapid growth of China's satellite internet industry and the continuous development of space communication technology, traditional microwave communication on satellites has shifted towards laser communication solutions. In laser communication systems, narrow-linewidth lasers and erbium-doped fiber amplifiers (EDFAs) are used as core optical components to improve transmission power and data transmission rates, ensuring communication quality and stability between satellites. However, currently, due to the requirements of lightweight, high reliability, and high stability for laser communication payloads, narrow-linewidth lasers and EDFAs, as discrete components, are difficult to meet these requirements in terms of both performance and size. Summary of the Invention

[0003] The technical problem solved by this invention is to overcome the shortcomings of prior art and provide a laser component structure that greatly reduces size and weight while achieving high-power narrow-linewidth output.

[0004] The objective of this invention is achieved through the following technical solution: a laser component structure, comprising: a laser module, a lens module, an amplifier module, a heat sink, a semiconductor cooling controller, an airtight housing, and a metallized FA optical fiber; wherein the laser module, the lens module, and the amplifier module are all mounted on the heat sink; the heat sink is disposed on the semiconductor cooling controller; the semiconductor cooling controller is disposed inside the airtight housing; one end of the metallized FA optical fiber passes through the airtight housing and is connected to the heat sink.

[0005] In the above-described laser component structure, the laser module includes a DFB chip, a thermistor A, an MPD chip, and a first substrate; wherein the DFB chip, the thermistor A, and the MPD chip are all disposed on the first substrate; and the first substrate is mounted on the heat sink.

[0006] In the above-described laser component structure, the lens module includes a collimating lens, an optical isolator, a converging lens, and a second substrate; wherein the collimating lens, the optical isolator, and the converging lens are all disposed on the second substrate; and the collimating lens, the optical isolator, and the converging lens are arranged sequentially along the optical path direction; the second substrate is mounted on the heat sink.

[0007] In the aforementioned laser component structure, the amplifier module includes an SOA chip, a thermistor B, and a third substrate; wherein the SOA chip and the thermistor B are both disposed on the third substrate; and the third substrate is mounted on the heat sink.

[0008] In the above laser component structure, the semiconductor cooling controller is welded to the hermetic housing by reflow soldering; the heat sink is welded to the semiconductor cooling controller by reflow soldering.

[0009] In the aforementioned laser component structure, Sn63Pb37 tin-lead alloy solder is used for reflow soldering, and the maximum reflow soldering temperature does not exceed 250℃.

[0010] In the above laser component structure, the DFB chip is mounted on the first substrate using a gold-tin solder eutectic method; the thermistor A and the MPD chip are both mounted on the first substrate using conductive silver paste.

[0011] In the laser component structure described above, the SOA chip is mounted on the third substrate via a gold-tin solder eutectic method; the thermistor B is mounted on the third substrate via conductive silver paste.

[0012] In the aforementioned laser component structure, the gold-tin solder is Au80Sn20, and the maximum eutectic temperature does not exceed 350℃.

[0013] In the above-described laser component structure, the positions of the laser module and the lens group module are obtained through the following steps: a spatial optical power meter is placed at the convergence position of the lens group module; the laser emitted by the laser module reaches the lens group module; the lens group module collimates and isolates the laser before focusing it onto the spatial optical power meter; the spatial optical power meter measures the optical power; the positions of the laser module and the lens group module are adjusted, and the position of the laser module and the lens group module corresponding to the maximum optical power is the required setting position.

[0014] Compared with the prior art, the present invention has the following advantages:

[0015] (1) The present invention designs a DFB chip and SOA chip combined packaging scheme. Compared with the discrete devices of DFB narrow linewidth laser and SOA amplifier, this laser component can achieve high power narrow linewidth output while greatly reducing the size and weight.

[0016] (2) The laser component structure proposed in this invention has each assembly unit designed independently. The DFB ceramic substrate, lens group ceramic substrate and SOA ceramic substrate can be tested for COC separately. At the same time, it is easy to assemble as a whole, saves intermediate processes, and has the advantages of simple assembly process and high reliability. Attached Figure Description

[0017] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0018] Figure 1 This is a schematic diagram of the laser component structure provided in an embodiment of the present invention;

[0019] Figure 2 This is a front view of the laser assembly provided in an embodiment of the present invention;

[0020] Figure 3 This is a cross-sectional view of the laser assembly provided in an embodiment of the present invention. Detailed Implementation

[0021] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the disclosure to those skilled in the art. It should be noted that, unless otherwise specified, the embodiments and features described herein can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0022] Figure 1 This is a schematic diagram of the laser component structure provided in an embodiment of the present invention; Figure 2 This is a front view of the laser assembly provided in an embodiment of the present invention; Figure 3 This is a cross-sectional view of a laser assembly provided in an embodiment of the present invention. Figure 1 , Figure 2 and Figure 3 As shown, the laser assembly structure includes a laser module 1, a lens module 2, an amplifier module 3, a heat sink 4, a semiconductor cooling controller 5, an airtight housing 6, and a metallized FA fiber 7. The laser module 1, lens module 2, and amplifier module 3 are all mounted on the heat sink 4. The heat sink 4 is disposed on the semiconductor cooling controller 5. The semiconductor cooling controller 5 is disposed inside the airtight housing 6. One end of the metallized FA fiber 7 passes through the airtight housing 6 and connects to the heat sink 4.

[0023] like Figure 2 As shown, the laser module 1 includes a DFB chip 11, a thermistor A12, an MPD chip 13, and a first substrate; wherein, the DFB chip 11, the thermistor A12, and the MPD chip 13 are all disposed on the first substrate; the first substrate is mounted on a heat sink 4.

[0024] like Figure 2 As shown, the lens module 2 includes a collimating lens 21, an optical isolator 22, a converging lens 23, and a second substrate; wherein the collimating lens 21, the optical isolator 22, and the converging lens 23 are all disposed on the second substrate; and the collimating lens 21, the optical isolator 22, and the converging lens 23 are arranged sequentially along the optical path direction; the second substrate is mounted on the heat sink 4.

[0025] like Figure 2 As shown, the amplifier module 3 includes an SOA chip 31, a thermistor B32, and a third substrate; wherein, the SOA chip 31 and the thermistor B32 are both disposed on the third substrate; the third substrate is mounted on the heat sink 4.

[0026] The semiconductor refrigeration controller 5 is soldered to the airtight housing 6 via reflow soldering; the heat sink 4 is soldered to the semiconductor refrigeration controller 5 via reflow soldering. Sn63Pb37 tin-lead alloy solder is used for reflow soldering, and the maximum reflow soldering temperature does not exceed 250℃.

[0027] DFB chip 11 is mounted on the first substrate via a gold-tin solder eutectic bonding method; thermistor A12 and MPD chip 13 are both mounted on the first substrate via conductive silver paste. The gold-tin solder is Au80Sn20, and the maximum eutectic temperature does not exceed 350℃.

[0028] SOA chip 31 is mounted on the third substrate via a gold-tin solder eutectic bonding method; thermistor B32 is mounted on the third substrate via conductive silver paste. The gold-tin solder is Au80Sn20, and the maximum eutectic temperature does not exceed 350℃.

[0029] The positions of laser module 1 and lens module 2 are determined through the following steps: a spatial optical power meter is placed at the convergence position of the lens module. Laser module 1 emits a laser beam that reaches lens module 2. Lens module 2 collimates and isolates the laser beam, then converges it to the spatial optical power meter, which measures the optical power. The positions of laser module 1 and lens module 2 are adjusted until the optical power is at its maximum. This position is the desired setting position.

[0030] like Figure 1 and Figure 2 As shown, the laser assembly consists of a laser module (DFB COC) 1, a lens assembly module 2 (lens COC), an amplifier module 3 (SOA COC), a heat sink 4, a semiconductor cooling controller (TEC) 5, an airtight housing 6, and a metallized FA fiber 7. The DFB COC, lens COC, and SOA COC are all mounted on the heat sink, which is bonded to the TEC. The TEC is soldered to the airtight housing, and the FA fiber is glued to the heat sink.

[0031] The specific assembly steps for the laser assembly are as follows:

[0032] TEC and heat sink assembly: The TEC is mounted on the corresponding position of the airtight tube shell, and the heat sink is mounted on the TEC. The three are soldered together in one go by reflow soldering. The reflow soldering uses Sn63Pb37 tin-lead alloy solder, and the reflow soldering temperature does not exceed 250°C to ensure good contact between the bottom surface of the TEC and the tube shell, and between the TEC and the heat sink. The positive and negative terminals of the TEC are soldered to the corresponding pins of the tube shell.

[0033] DFB COC Assembly: The DFB chip is mounted on the first substrate using a gold-tin solder eutectic method. The gold-tin solder is Au80Sn20, and the maximum eutectic temperature does not exceed 350℃. Thermistor A and MPD chip are mounted on the first substrate using conductive silver paste. The positions of these components should follow the specific drawings, and the MPD chip should be at an 8-degree angle to the DFB chip to avoid reflection.

[0034] DFB COC gold wire bonding uses a gold wire bonding device to connect the DFB chip, MPD, and thermistor to an external test board. The test board can be used to power the DFB chip to emit light, verifying whether there are any problems with the DFB COC assembly, and can also provide a light source reference for subsequent steps.

[0035] SOA COC assembly: The SOA chip is mounted on the third substrate via a eutectic bonding method using gold-tin solder sheets. The gold-tin solder is Au80Sn20, and the maximum eutectic temperature does not exceed 350℃. Thermistor B is mounted on the third substrate using conductive silver paste.

[0036] Lens assembly COC: The isolator is pre-attached to the corresponding position on the lens assembly COC using UV adhesive. The DFB COC with gold wire bonding is used as a fixed output light source. At the same time, the collimating lens and the converging lens are adjusted. The optimal coupling position is found by observing with a spot analyzer and a spatial optical power meter. Finally, the collimating lens and the converging lens are attached to the third substrate on the lens assembly COC using UV adhesive.

[0037] For the assembly of three Couplings (COCs), first, the DFB COC is mounted onto the corresponding position on the heat sink using conductive silver paste. The position of the lens group COC is then adjusted, and the optimal coupling position is found using a beam analyzer and a spatial optical power meter. The lens group COC is then fixed to the heat sink using conductive silver paste. Simultaneously, the SOA COC and FA fiber are adjusted, and the maximum optical power output of the FA fiber is observed to find the optimal coupling position. The SOA COC is then fixed to the heat sink using conductive silver paste.

[0038] FA fiber assembly: The FA fiber is repositioned. After finding the maximum coupling power, the fiber coupling position is determined. UV glue is applied to the bottom of the FA for fixation. It is then mounted on the heat sink. Black glue is added to both sides of the FA for structural reinforcement.

[0039] The COC is wire-bonded to the casing. According to the wire bonding drawing, the SOA COC and the pads between the COC and the casing are wire-bonded to ensure that all wire bonding positions and push-pull forces meet the relevant requirements.

[0040] For FA metallized fiber welding, solder wire is fed into the opening of the airtight tube shell sealing section, and the metallized fiber is welded using a high-frequency welding machine. The welding power is required to be no higher than 6kW, and the oscillation frequency of the high-frequency welding machine should not be less than 1100kHz. The solder fills the entire sealing section.

[0041] Parallel sealing welding involves welding the top cover of the airtight pipe shell to the pipe shell body to achieve a complete airtight seal. Before sealing, nitrogen baking is required at 85℃ for at least 168 hours, followed by parallel sealing welding.

[0042] For the laser structure, this embodiment proposes a four-way modular design for the COC (Chip-on-Chip), allowing for the separate design and assembly of the DFB COC, lens group COC, and SOA COC, thus improving the assembly efficiency of a single COC. Regarding the assembly of laser components, this invention provides complete assembly steps and requirements, resulting in a simple assembly process with high reliability.

[0043] This embodiment designs a combined DFB chip and SOA chip packaging scheme. Compared with discrete devices of DFB narrow linewidth laser and SOA amplifier, this laser assembly can achieve high power narrow linewidth output while greatly reducing size and weight. The laser assembly structure proposed in this embodiment has each assembly unit designed independently. The DFB ceramic substrate, lens group ceramic substrate and SOA ceramic substrate can be tested for COC separately. At the same time, it is easy to assemble as a whole, saving intermediate processes and has the advantages of simple assembly process and high reliability.

[0044] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make possible changes and modifications to the technical solutions of the present invention by utilizing the methods and techniques disclosed above without departing from the spirit and scope of the present invention. Therefore, any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solutions of the present invention shall fall within the protection scope of the technical solutions of the present invention.

Claims

1. A laser component structure, characterized in that... include: The components include a laser module (1), a lens module (2), an amplifier module (3), a heat sink (4), a semiconductor cooling controller (5), a hermetically sealed housing (6), and a metallized FA fiber (7); among which, The laser module (1), the lens module (2) and the amplifier module (3) are all mounted on the heat sink (4); The heat sink (4) is disposed on the semiconductor cooling controller (5); The semiconductor cooling controller (5) is disposed inside the airtight housing (6); One end of the metallized FA optical fiber (7) passes through the airtight tube shell (6) and is connected to the heat sink (4); The laser module (1) includes a DFB chip (11), a thermistor A (12), an MPD chip (13), and a first substrate; wherein, The DFB chip (11), the thermistor A (12) and the MPD chip (13) are all disposed on the first substrate; The first substrate is attached to the heat sink (4); The lens module (2) includes a collimating lens (21), an optical isolator (22), a converging lens (23), and a second substrate; wherein, The collimating lens (21), the optical isolator (22), and the converging lens (23) are all disposed on the second substrate; and the collimating lens (21), the optical isolator (22), and the converging lens (23) are arranged sequentially along the optical path direction; The second substrate is attached to the heat sink (4); The amplifier module (3) includes an SOA chip (31), a thermistor B (32), and a third substrate; wherein, The SOA chip (31) and the thermistor B (32) are both disposed on the third substrate; The third substrate is attached to the heat sink (4); The positions of the laser module (1) and the lens group module (2) are obtained through the following steps: The spatial optical power meter is placed at the convergence position of the lens module (2). The laser module (1) emits a laser to the lens module (2). The lens module (2) collimates and isolates the laser and then converges it to the spatial optical power meter. The spatial optical power meter measures the optical power. Adjust the positions of the laser module (1) and the lens module (2). The position of the laser module (1) and the lens module (2) corresponding to the maximum optical power is the position to be set.

2. The laser assembly structure according to claim 1, characterized in that: The semiconductor cooling controller (5) is welded to the airtight housing (6) by reflow soldering. The heat sink (4) and the semiconductor cooling controller (5) are soldered together by reflow soldering.

3. The laser assembly structure according to claim 1, characterized in that: Reflow soldering uses Sn63Pb37 tin-lead alloy solder, and the maximum reflow soldering temperature should not exceed 250℃.

4. The laser assembly structure according to claim 1, characterized in that: The DFB chip (11) is mounted on the first substrate by means of gold-tin solder eutectic bonding; The thermistor A (12) and the MPD chip (13) are both mounted on the first substrate using conductive silver paste.

5. The laser assembly structure according to claim 1, characterized in that: The SOA chip (31) is mounted on the third substrate using a gold-tin solder eutectic method; The thermistor B (32) is mounted on the third substrate using conductive silver paste.

6. The laser assembly structure according to claim 4 or 5, characterized in that: The gold-tin solder is Au80Sn20, and the maximum eutectic temperature does not exceed 350℃.

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