Multiple light-emitting devices and method for manufacturing multiple light-emitting devices

Abstract

To improve the quality of light emitted from a light-emitting device. The plurality of light-emitting devices include: a first light-emitting device including a first semiconductor laser element that emits light of a first color having a light peak wavelength of a first wavelength, and a first reflective member having a reflectance of 90% or more with respect to the first wavelength; a second light-emitting device including a second semiconductor laser element that emits light of a second color having a light peak wavelength of a second wavelength, and a second reflective member having a reflectance of 90% or more with respect to the second wavelength; and a third light-emitting device including a third semiconductor laser element that emits a first color having a light peak wavelength of a third wavelength, a fourth semiconductor laser element that emits a second color having a light peak wavelength of a fourth wavelength, and a plurality of third reflective members that have a reflectance of 90% or more with respect to the third wavelength and the fourth wavelength. The reflectance of the third reflective member to the light of the first wavelength is higher than the reflectance of the second reflective member to the light of the first wavelength, and the reflectance of the third reflective member to the light of the second wavelength is higher than the reflectance of the first reflective member to the light of the second wavelength.

Description

Technical Field

[0001] The present invention relates to a plurality of light emitting devices and a method for manufacturing the plurality of light emitting devices. Background Art

[0002] Japanese Patent Application Laid-Open No. 2002-304761 discloses an optical pickup device including two semiconductor laser elements that emit light having different wavelengths, and an optical element having a total reflection film on which the light emitted from the two semiconductor laser elements is incident.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent document 1: Japanese Patent Application Laid-Open No. 2002-304761. Summary of the invention

[0006] The present invention discloses an invention for solving the problem of improving the quality of light emitted from a light emitting device including a plurality of semiconductor laser elements and a plurality of reflecting members.

[0007] The plurality of light-emitting devices disclosed in the embodiment include a first light-emitting device, a second light-emitting device, and a third light-emitting device, each of which has a package having the same appearance and in which a semiconductor laser element and a reflective component are arranged, wherein the first light-emitting device includes: a first package as the package; a plurality of first semiconductor laser elements as the semiconductor laser element, which are respectively arranged in the first package and emit light of a first color with a first emission peak wavelength; a plurality of first reflective components as the reflective component, which are respectively arranged in the first package and have a first reflective surface provided with a first reflective film with a reflectivity of 90% or more for the first wavelength, reflecting light emitted from the first semiconductor laser element. The second light emitting device comprises: a second package as the package; a plurality of second semiconductor laser elements as the semiconductor laser elements, which are respectively arranged in the second package and emit light of a second color different from the first color and with a peak wavelength of light emission of a second wavelength; a plurality of second reflecting components as the reflecting components, which are respectively arranged in the second package and have a second reflecting surface provided with a second reflecting film with a reflectivity of 90% or more for the second wavelength, and reflect the light of the second color emitted from the second semiconductor laser element; the third light emitting device comprises: a third package as the package; a plurality of second semiconductor laser elements as the semiconductor laser elements, which are respectively arranged in the second package and emit light of a second color different from the first color and with a peak wavelength of light emission of a second wavelength; a plurality of second reflecting components as the reflecting components, which are respectively arranged in the second package and have a second reflecting surface provided with a second reflecting film with a reflectivity of 90% or more for the second wavelength, and reflect the light of the second color emitted from the second semiconductor laser element. or a plurality of third semiconductor laser elements, which are arranged in the third package and emit the first color with a peak wavelength of light emission being a third wavelength; one or more fourth semiconductor laser elements, which are the semiconductor laser elements, are arranged in the third package and emit the second color with a peak wavelength of light emission being a fourth wavelength; a plurality of third reflecting components, which are respectively arranged in the package and have a third reflecting surface provided with a third reflecting film having a reflectivity of 90% or more for the third wavelength and the fourth wavelength, and include the reflecting component for reflecting the first color light emitted from the third semiconductor laser element and the reflecting component for reflecting the second color light emitted from the fourth semiconductor laser element, wherein the first light emission The device does not include the semiconductor laser element that emits the second color light with a peak emission wavelength being the second wavelength and the semiconductor laser element that emits the second color light with a peak emission wavelength being the fourth wavelength, the second light emitting device does not include the semiconductor laser element that emits the first color light with a peak emission wavelength being the first wavelength and the semiconductor laser element that emits the first color light with a peak emission wavelength being the third wavelength, the reflectivity of the third reflection film to the light of the first wavelength is higher than the reflectivity of the second reflection film to the light of the first wavelength, and the reflectivity of the third reflection film to the light of the second wavelength is higher than the reflectivity of the first reflection film to the light of the second wavelength.

[0008] The manufacturing method of the plurality of light-emitting devices disclosed in the embodiment includes a method for manufacturing a first light-emitting device, a method for manufacturing a second light-emitting device, and a method for manufacturing a third light-emitting device, wherein the method for manufacturing the first light-emitting device includes: a process of dividing a first base material and manufacturing more than ten first reflection components each having a first reflection film; a process of configuring less than ten first semiconductor laser elements and less than ten first reflection components in a first package; the method for manufacturing the second light-emitting device includes: a process of dividing a second base material and manufacturing more than ten second reflection components each having a second reflection film; a process of configuring less than ten second semiconductor laser elements and less than ten second reflection components in a second package; the method for manufacturing the third light-emitting device includes: a process of dividing a third base material and manufacturing more than ten third reflection components each having a third reflection film; a process of configuring more than one third semiconductor laser element, one The process of providing the fourth semiconductor laser element and ten or less third reflecting members; the first base material, the second base material and the third base material are base materials formed of the same material, the first semiconductor laser element emits light of a first color having a first emission peak wavelength, the second semiconductor laser element emits light of a second color having a second emission peak wavelength, the third semiconductor laser element emits light of the first color having a third emission peak wavelength, the fourth semiconductor laser element emits light of the second color having a fourth emission peak wavelength, the sum of the number of the one or more third semiconductor laser elements and the number of the one or more fourth semiconductor laser elements is ten or less, the reflectivity of the third reflecting film to the light of the first wavelength is higher than the reflectivity of the second reflecting film to the light of the first wavelength, and the reflectivity of the third reflecting film to the light of the second wavelength is higher than the reflectivity of the first reflecting film to the light of the second wavelength.

[0009] In at least one of the one or more inventions disclosed in the embodiments, the quality of light emitted from the light emitting device can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a perspective view of a light emitting device according to an embodiment.

[0011] Figure 2 It is a side view of the light emitting device according to the embodiment.

[0012] Figure 3 yes Figure 1 A cross-sectional view of the light emitting device of the embodiment taken along the III-III section line.

[0013] Figure 4 It is a perspective view showing components arranged in the internal space of the light emitting device according to the embodiment.

[0014] Figure 5 It is a plan view showing components arranged in the internal space of the light emitting device according to the embodiment.

[0015] Figure 6 It is a plan view showing a state where a semiconductor laser element and a protective element are mounted on a base.

[0016] Figure 7 This is a side view showing a state where a semiconductor laser element and a protective element are mounted on a base.

[0017] Figure 8 It is a three-dimensional diagram of the package.

[0018] Fig. 9 yes Figure 8 A cross-sectional view of the package at section line IX-IX.

[0019] Fig.10 is a top view of the substrate.

[0020] Fig.11 It is a bottom view of the substrate.

[0021] Fig.12 yes Fig.10 A cross-sectional view of the substrate at section line XII-XII.

[0022] Fig.13 This is a schematic diagram for explaining the positional deviation of light caused by component tolerance of a reflective component.

[0023] Fig.14A This is a schematic side view for explaining the first step in the method for manufacturing the reflective member.

[0024] Fig. 14B It is a schematic side view for explaining the second step in the method for manufacturing the reflective member.

[0025] Fig. 14C It is a schematic perspective view for explaining the second step in the method for manufacturing the reflective member.

[0026] Fig.14D It is a schematic side view for explaining the third step in the method for manufacturing the reflective member.

[0027] Fig.14E It is a schematic perspective view for explaining the third step in the method for manufacturing the reflective member.

[0028] Fig.14F It is a schematic side view for explaining the fourth step in the method for manufacturing the reflective member.

[0029] Figure 14G It is from Fig.14F The side views viewed from different directions are schematic side views for explaining the fourth step in the method for manufacturing the reflective member.

[0030] Description of Reference Numerals

[0031] 1 Lighting device

[0032] 1A First light emitting device

[0033] 1B Second light emitting device

[0034] 1C The third light emitting device

[0035] 10 Packages

[0036] 11 Matrix

[0037] 11A First upper surface

[0038] 11B Lower surface

[0039] 11C Second upper surface

[0040] 11D Outer side

[0041] 11E Inside side

[0042] 11F Stairs

[0043] 11F1 First step

[0044] 11F2 Second step

[0045] 11G Top surface

[0046] 11H Side

[0047] 11M Base

[0048] 11N Frame

[0049] 12A Wiring section

[0050] 12A1 First wiring section

[0051] 12A2 Second wiring section

[0052] 13A Bonding pattern

[0053] 14 Cover

[0054] 14A Upper surface

[0055] 14B Lower surface

[0056] 14C Side

[0057] 20Semiconductor laser element

[0058] 20A First semiconductor laser element

[0059] 20B Second semiconductor laser element

[0060] 20C Third semiconductor laser element

[0061] 20D Fourth semiconductor laser element

[0062] 21A Upper surface

[0063] 21B Lower surface

[0064] 21C side view

[0065] 22 Light exit surface

[0066] 30 base

[0067] 31A Upper surface

[0068] 31B Lower surface

[0069] 31C side view

[0070] 32A base plate

[0071] 32B Upper metal parts

[0072] 32C lower side metal parts

[0073] 33 wiring layer

[0074] 40 reflective parts

[0075] 40A first reflecting member

[0076] 40B Second reflecting member

[0077] 40C Third reflecting component

[0078] 41A Lower surface

[0079] 41B Light reflecting surface

[0080] 41B1 First light reflecting surface

[0081] 41B2 Second light reflecting surface

[0082] 41B3 Third light reflecting surface

[0083] 42 reflective film

[0084] 42A First reflective film

[0085] 42B Second reflective film

[0086] 42C Third reflective film

[0087] 50 protection elements

[0088] 51A Top surface

[0089] 51B Lower surface

[0090] 51C side view

[0091] 60 wiring

[0092] 70Optical components (lens components)

[0093] 71A Top surface

[0094] 71B Lower surface

[0095] 71C side view

[0096] 71D lens surface (optical action surface)

[0097] 72A Lens unit

[0098] 72B Non-lens part

[0099] 400 base material

[0100] 401 metal film

[0101] 402 reflective film. DETAILED DESCRIPTION

[0102] In this specification and claims, polygons such as triangles and quadrilaterals are also referred to as polygons, including shapes where the corners of the polygons are processed by rounding, chamfering, cutting corners, cutting rounds, etc. In addition, shapes where the middle part of the side is processed are also referred to as polygons, not limited to the corners (ends of the sides). That is, shapes where the base of the polygon is retained and local processing is performed are included in the interpretation of "polygon" recorded in this specification and claims.

[0103] In addition, it is not limited to polygons. The same applies to words that represent specific shapes such as trapezoids, circles, and concave-convex shapes. In addition, the same applies to the sides that form the shape. That is, even if the corners and the middle part of a side are processed, the interpretation of "side" also includes the processed part. In addition, when distinguishing "polygons" and "sides" that have not been partially processed from the processed shape, they are marked as "strict", for example, recorded as "strict quadrilateral" and the like.

[0104] In addition, in this specification or claims, the records of up and down (top / bottom), left and right, front and back, front and back (front / back), front and back, etc. are merely descriptions of relative positions, orientations, directions, etc., and may not be consistent with the relationship during use.

[0105] In addition, in the drawings, arrows are sometimes used to indicate directions such as the X direction, the Y direction, and the Z direction. The directions of the arrows are matched between multiple drawings of the same embodiment. In addition, in the drawings, the directions of the arrows marked with X, Y, and Z are set as positive directions, and the directions opposite thereto are set as negative directions. For example, the direction marked with X at the front end of the arrow is the X direction and is the positive direction. It should be noted that in this specification, the direction in the X direction and the positive direction is referred to as the "positive direction of X", and the direction opposite thereto is referred to as the "negative direction of X". When referred to as the "X direction", any direction of the positive direction and the negative direction is included. The same is true for the Y direction and the Z direction.

[0106] In addition, in this specification, when an object is identified as "one or more" and the object is described, the description of the object as one and the description of the object as multiple are summarized. Therefore, the description of "one or more" can support any of the embodiments including one or more objects, at least one object, and multiple objects.

[0107] In addition, in this specification, the description of "one or each" object is a summary of the description of one object in an embodiment having one object, the description of one object in an embodiment having multiple objects, and the description of multiple objects in an embodiment having multiple objects. Therefore, by describing "one or each" object, the situation that in an embodiment having one object, the one object has the description content, in an embodiment having multiple objects, at least one of the objects has the description content, in an embodiment having multiple objects, the multiple objects have the description content respectively, and in an embodiment having one or more objects, all objects have the description content are all supported.

[0108] In addition, in this specification, for example, when describing constituent elements, "components" or "parts" are sometimes described. "Components" refer to objects that are physically handled as a single unit. An object that is physically handled as a single unit can also be said to be an object that is handled as a single unit in a manufacturing process. On the other hand, "parts" refer to objects that may not be handled as a single unit physically. For example, "parts" are used when partially capturing a part of a component or when capturing a plurality of components as a single object.

[0109] In addition, the distinction between "component" and "portion" mentioned above does not mean that the scope of rights is intentionally limited in equivalent interpretation. That is, even if there is a component described as a "component" in the claims, the applicant does not recognize that physically treating the component as a single body is indispensable for the application of the present invention based solely on this situation.

[0110] In addition, in this specification or claims, when there are multiple components, in order to distinguish them, the components may be marked with "first" or "second" at the head to distinguish them. In addition, the objects distinguished in this specification and claims may sometimes be different. Therefore, even if the claims record a component with the same marking as in this specification, the object determined by the component may sometimes be inconsistent in this specification and claims.

[0111] For example, in this specification, there are constituent elements that are distinguished by being marked as "first", "second", and "third". When the constituent elements marked as "first" and "third" in this specification are recorded in the claims, from the perspective of easy observation, they are sometimes marked as "first" and "second" in the claims to distinguish the constituent elements. In this case, the constituent elements marked as "first" and "second" in the claims refer to the constituent elements marked as "first" and "third" in this specification, respectively. In addition, the application objects of this rule are not limited to constituent elements, and can also be reasonably and flexibly applied to other objects.

[0112] Hereinafter, the mode for implementing the present invention will be described. In addition, with reference to the accompanying drawings, a specific mode for implementing the present invention will be described. In addition, the mode for implementing the present invention is not limited to the specific mode. That is, the illustrated embodiment is not the only mode for implementing the present invention. In addition, the size, positional relationship, etc. of the components shown in the drawings are sometimes exaggerated for ease of understanding.

[0113] <Implementation Method>

[0114] A plurality of light emitting devices 1 according to the embodiment will be described. Figures 1 to 14G This is a diagram for explaining an exemplary embodiment of a plurality of light emitting devices 1 . Figure 1 It is a perspective view of the light emitting device 1 . Figure 2 is a side view of the light emitting device 1 . Figure 3 yes Figure 1 A cross-sectional view of the light emitting device 1 taken along the III-III section line. Figure 4 It is a perspective view showing components arranged in the internal space of the light emitting device 1 . Figure 5 1 is a top view showing components arranged in the internal space of the light emitting device 1. Figure 5 In, omitted Figure 4 Wiring as described in . Figure 6 as well as Figure 7 The diagrams are respectively a plan view and a side view showing a state where the semiconductor laser element 20 and the protection element 50 are mounted on the base 30 . Figure 8 is a perspective view of the package 10 . Fig. 9 yes Figure 8 A cross-sectional view of the package 10 taken along the section line IX-IX. Fig.10 It is a top view of the base body 11. Fig.11 It is a bottom view of the base body 11. Fig.12 yes Fig.10 A cross-sectional view of the base body 11 taken along the section line XII-XII. Fig.13 It is a schematic diagram for explaining the positional deviation of light caused by the component tolerance of the reflection member 40 . FIG. 14A to FIG. 14G It is a diagram for explaining a method of manufacturing the reflecting member 40 .

[0115] The plurality of light emitting devices 1 include a first light emitting device 1A, a second light emitting device 1B, and a third light emitting device 1C. Typically, the plurality of first light emitting devices 1A, the plurality of first light emitting devices 1A, and the plurality of first light emitting devices 1A are included in the plurality of light emitting devices 1 .

[0116] In this embodiment, it is assumed by way of example that a person who manufactures a plurality of light emitting devices 1 manufactures a plurality of first light emitting devices 1A, a plurality of second light emitting devices 1B, and a plurality of third light emitting devices 1C.

[0117] In addition, or among those who manage inventory and sell multiple first light-emitting devices 1A, multiple second light-emitting devices 1B, and multiple third light-emitting devices 1C, from a technical point of view based on the technical ideas disclosed in this specification, by adjusting the manufacturing destination of the first light-emitting device 1A, the manufacturing destination of the second light-emitting device 1B, and the manufacturing destination of the third light-emitting device 1C, it is also possible to enjoy the same effect as manufacturing the first light-emitting device 1A, the second light-emitting device 1B, and the third light-emitting device 1C by themselves.

[0118] That is, if the invention disclosed in this specification can be implemented by manufacturing multiple light-emitting devices 1 by oneself, the invention disclosed in this specification can also be implemented by using one or more manufacturers to complete the invention disclosed in this specification instead of manufacturing part or all of the multiple light-emitting devices 1 by oneself.

[0119] The light emitting device 1 includes a plurality of components including a package 10 , a plurality of semiconductor laser elements 20 , one or more bases 30 , a plurality of reflective members 40 , one or more protective elements 50 , a plurality of wirings 60 , and an optical member 70 .

[0120] In addition, the light emitting device 1 may further include other components. For example, the light emitting device 1 may further include a semiconductor laser element separately from one or more semiconductor laser elements 20. In addition, the light emitting device 1 may not include some of the multiple components listed here.

[0121] First, each component will be described.

[0122] (Package 10)

[0123] The package 10 includes a base 11 and a lid 14. The lid 14 is bonded to the base 11 to form the package 10. An internal space in which other components are arranged is defined in the package 10. The internal space is a closed space surrounded by the base 11 and the lid 14. In addition, the internal space can be a space sealed in a vacuum or airtight state.

[0124] When viewed from above, the outer edge shape of the package 10 is a rectangle. The rectangle may be a rectangle having a long side and a short side. In the package 10 shown in the figure, the long side direction of the rectangle is the same direction as the X direction, and the short side direction is the same direction as the Y direction. In addition, when viewed from above, the outer edge shape of the package 10 may not be a rectangle.

[0125] The package 10 has an internal space in which other components are arranged. The first upper surface 11A of the package 10 is a part of a region defining the internal space. In addition, each inner side surface 11E and the lower surface 14B of the package 10 are a part of a region defining the internal space.

[0126] The base 11 has a first upper surface 11A and a lower surface 11B. The base 11 has a second upper surface 11C. The base 11 has one or more outer side surfaces 11D. The base 11 has one or more inner side surfaces 11E. The one or more outer side surfaces 11D intersect with the second upper surface 11C. The one or more outer side surfaces 11D intersect with the lower surface 11B. The one or more inner side surfaces 11E intersect with the second upper surface 11C.

[0127] When viewed from above, the outer edge shape of the base 11 is a rectangle. When viewed from above, the outer edge shape of the base 11 is the outer edge shape of the package 10. When viewed from above, the outer edge shape of the first upper surface 11A is a rectangle. The rectangle may be a rectangle having long sides and short sides. The long side direction of the first upper surface 11A is parallel to the long side direction of the outer edge shape of the base 11. In addition, when viewed from above, the outer edge shape of the first upper surface 11A may not be a rectangle.

[0128] When viewed from above, the first upper surface 11A is surrounded by the second upper surface 11C. The second upper surface 11C is an annular surface that surrounds the first upper surface 11A when viewed from above. The second upper surface 11C is a rectangular annular surface. Here, the frame defined by the inner edge of the second upper surface 11C is referred to as the inner frame of the second upper surface 11C, and the frame defined by the outer edge of the second upper surface 11C is referred to as the outer frame of the second upper surface 11C.

[0129] The base 11 has a recessed portion surrounded by a frame formed by the second upper surface 11C. The recessed portion defines a portion in the base 11 that is recessed downward from the second upper surface 11C. The first upper surface 11A is a portion of the recessed portion. One or more inner side surfaces 11E are a portion of the recessed portion. The second upper surface 11C is located above the first upper surface 11A.

[0130] The base 11 has one or more step portions 11F. The step portion 11F has an upper surface 11G and a side surface 11H intersecting the upper surface 11G and extending downward from the upper surface 11G. Here, one step portion 11F has only one upper surface 11G and one side surface 11H. The upper surface 11G intersects with the inner side surface 11E. The side surface 11H intersects with the first upper surface 11A.

[0131] One or each step portion 11F is provided inside the inner frame of the second upper surface 11C when viewed from above. One or each step portion 11F is formed along a part or all of the inner side surface 11E when viewed from above. In the base 11, the side surface 11H is the inner side surface, but the side surface 11H and the inner side surface 11E are different surfaces. One or each inner side surface 11E and one or each side surface 11H are perpendicular to the first upper surface 11A. The perpendicularity here allows an error of ±3 degrees.

[0132] The one or more step portions 11F may include a first step portion 11F1 and a second step portion 11F2. The first step portion 11F1 and the second step portion 11F2 are disposed at positions opposite to each other on the side surface 11H. The first step portion 11F1 and the second step portion 11F2 are disposed on the short side of the inner frame of the second upper surface 11C.

[0133] The base 11 includes a base 11M and a frame 11N. The base 11M and the frame 11N may be made of different materials. The base 11 may include a base member corresponding to the base 11M and a frame member corresponding to the frame 11N.

[0134] The base 11M includes a first upper surface 11A. The frame 11N includes a second upper surface 11C. The frame 11N includes one or more outer side surfaces 11D and one or more inner side surfaces 11E. The frame 11N includes one or more step portions 11F.

[0135] The lower surface of base 11M constitutes part or all of lower surface 11B of base 11. When the lower surface of base 11M constitutes part of lower surface 11B of base 11, the lower surface of frame 11N constitutes the remaining area of ​​lower surface 11B of base.

[0136] The base 11 has a plurality of wiring sections 12A. The plurality of wiring sections 12A include one or more first wiring sections 12A1 arranged in the internal space of the package 10 and one or more second wiring sections 12A2 provided on the outer surface of the package 10.

[0137] One or each first wiring portion 12A1 is provided on the upper surface 11G of the step portion 11F. The base 11 has one or more first wiring portions 12A1 provided on the upper surface 11G of the first step portion 11F1. The base 11 has one or more first wiring portions 12A1 provided on the upper surface 11G of the second step portion 11F2.

[0138] One or each second wiring portion 12A2 is provided on the lower surface 11B of the package 10. One or each second wiring portion 12A2 is provided on the lower surface of the frame portion 11N. Alternatively, the second wiring portion 12A2 may be provided on an outer surface of the package 10 different from the lower surface 11B.

[0139] When the base 11 is divided into two regions by the side surface 11H of the first step portion 11F1 and by an imaginary line parallel to the side surface 11H in a plan view, the region including the upper surface 11G of the first step portion 11F1 has one or more second wiring portions 12A2 provided on the lower surface 11B of the base 11.

[0140] When the base 11 is divided into two regions by the side surface 11H of the second step portion 11F2 and by an imaginary line parallel to the side surface 11H in a plan view, the region including the upper surface 11G of the second step portion 11F2 has one or more second wiring portions 12A2 provided on the lower surface 11B of the base 11.

[0141] In the base body 11, one or each of the first wiring portions 12A1 is electrically connected to the second wiring portion 12A2. One or more first wiring portions 12A1 are electrically connected to mutually different second wiring portions 12A2.

[0142] The base 11 has a bonding pattern 13A. The bonding pattern 13A is provided on the second upper surface 11C. The bonding pattern 13A is provided in a ring shape. The bonding pattern 13A is provided in a rectangular ring shape. In a plan view, the first upper surface 11A is surrounded by the bonding pattern 13A.

[0143] The base 11 can be formed using ceramics as a main material, for example. Examples of the ceramics used as a main material of the base 11 include aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide.

[0144] Here, the main material refers to the material that accounts for the largest proportion by mass or volume in the object to be formed. In addition, when the object to be formed is formed by one material, the material is the main material. That is, the proportion of a certain material as the main material including the material can be 100%.

[0145] The substrate 11 may also be formed using a base member and a frame member formed using different main materials. The base member may be formed using, for example, a material having excellent heat dissipation properties such as a metal or a composite containing a metal, graphite, or diamond as the main material. Examples of the metal that is the main material of the base member include copper, aluminum, or iron. Examples of the composite containing the metal that is the main material of the base member include copper molybdenum or copper tungsten. The frame member may be formed using, for example, a ceramic listed as the main material of the substrate 11 as the main material.

[0146] The wiring portion 12A can be formed by using a metal material as a main material, for example. Examples of the metal material that is the main material of the wiring portion 12A include single metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, or alloys containing these metals. The wiring portion 12A can be composed of, for example, one or more metal layers.

[0147] The bonding pattern 13A can be formed by using a metal material as the main material. Examples of the metal material that is the main material of the bonding pattern 13A include single metals such as Cu, Ag, Ni, Au, Sn, Ti, and Pd, or alloys containing these metals. The bonding pattern 13A can be composed of one or more metal layers.

[0148] The cover 14 has an upper surface 14A and a lower surface 14B. In addition, the cover 14 has one or more side surfaces 14C. The cover 14 is formed of a rectangular flat plate. In addition, the shape of the cover 14 may not be a rectangular parallelepiped.

[0149] The cover 14 is bonded to the base 11. The lower surface 14B of the cover 14 is bonded to the second upper surface 11C of the base 11. The cover 14 is bonded to the bonding pattern 13A of the base 11. The cover 14 is bonded to the base 11 via an adhesive.

[0150] The cover 14 has light-transmitting properties. Here, light-transmitting properties refer to a transmittance of 80% or more for light incident on the cover 14. In addition, the cover 14 may have a non-light-transmitting region (region without light-transmitting properties) in part.

[0151] The cover body 14 can be formed using, for example, glass as a main material. Alternatively, the cover body 14 can be formed using, for example, sapphire as a main material.

[0152] (Semiconductor Laser Element 20)

[0153] The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and a plurality of side surfaces 21C. The shape of the upper surface 21A is a rectangle having long sides and short sides. The outer shape of the semiconductor laser element 20 when viewed from above is a rectangle having long sides and short sides. In addition, the shape of the upper surface 21A and the outer shape of the semiconductor laser element 20 when viewed from above are not limited thereto.

[0154] The semiconductor laser element 20 has a light emitting surface 22 for emitting light. For example, the side surface 21C can serve as the light emitting surface 22. The side surface 21C serving as the light emitting surface 22 intersects with the short side of the upper surface 21A.

[0155] The semiconductor laser element 20 can be a single-emitter semiconductor laser element including one emitter, or a multi-emitter semiconductor laser element including a plurality of emitters.

[0156] The semiconductor laser element 20 can be, for example, a semiconductor laser element that emits blue light. For another example, the semiconductor laser element 20 can be a semiconductor laser element that emits green light. For another example, the semiconductor laser element 20 can be a semiconductor laser element that emits red light. In addition, the semiconductor laser element 20 can also be a semiconductor laser element that emits light of other colors or wavelengths.

[0157] Here, blue light refers to light having a peak emission wavelength in the range of 420 nm to 494 nm. Green light refers to light having a peak emission wavelength in the range of 495 nm to 570 nm. Red light refers to light having a peak emission wavelength in the range of 605 nm to 750 nm.

[0158] As the semiconductor laser element 20 emitting blue light or the semiconductor laser element 20 emitting green light, a semiconductor laser element including a nitride semiconductor can be cited. As the nitride semiconductor, for example, GaN, InGaN, AlGaN and other GaN-based semiconductors can be used. As the semiconductor laser element 20 emitting red light, a semiconductor laser element including an InAlGaP-based, GaInP-based, and GaAs, AlGaAs and other GaAs-based semiconductors can be cited.

[0159] The semiconductor laser element 20 emits laser light with directivity. Divergent light with diffusion is emitted from the light emission surface 22 (emission end surface) of the semiconductor laser element 20. The light emitted from the semiconductor laser element 20 forms an elliptical far field pattern (hereinafter referred to as "FFP") in a plane parallel to the light emission surface 22. The FFP is the shape and light intensity distribution of the emitted light at a position far from the light emission surface of the semiconductor laser element.

[0160] Here, light passing through the center of the elliptical shape of the FFP, in other words, light with peak intensity in the light intensity distribution of the FFP, is referred to as light traveling along the optical axis or light passing through the optical axis. 2 Light with an intensity above this is called main light.

[0161] The shape of the FFP of the light emitted from the semiconductor laser element 20 is an elliptical shape in which the stacking direction is longer than the direction perpendicular to the stacking direction in a plane parallel to the light emitting surface 22. The stacking direction refers to the direction in which a plurality of semiconductor layers including an active layer are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction may also be referred to as the surface direction of the semiconductor layer. In addition, the long-axis direction of the elliptical shape of the FFP may also be referred to as the fast-axis direction of the semiconductor laser element 20, and the short-axis direction may be referred to as the slow-axis direction of the semiconductor laser element 20.

[0162] Based on the light intensity distribution of FFP, 1 / e of the peak light intensity 2 The angle at which the light with the light intensity of the semiconductor laser element 20 spreads is defined as the light diffusion angle of the semiconductor laser element 20. Here, the light diffusion angle is the ratio of the light with the peak light intensity (the light passing through the optical axis) to 1 / e of the peak light intensity. 2 The light intensity is expressed by the angle of the light. In addition, the light diffusion angle is 1 / e of the peak light intensity. 2 In addition to the light intensity of the peak light intensity, it is sometimes also calculated based on the light intensity at half the peak light intensity. In the description of this specification, when simply referred to as "light diffusion angle", it means 1 / e of the peak light intensity. 2 The diffusion angle of light under the light intensity.

[0163] The diffusion angle of the light emitted from the semiconductor laser element 20 in the fast axis direction may be greater than 10 degrees and less than 40 degrees. In addition, the diffusion angle of the light in the slow axis direction may be greater than 0 degrees and less than 10 degrees. In addition, the diffusion angle of the light in the fast axis direction is greater than the diffusion angle of the light in the slow axis direction.

[0164] For example, the diffusion angle of the blue light emitted from the semiconductor laser element 20 in the fast axis direction may be greater than 15 degrees and less than 30 degrees, and the diffusion angle in the slow axis direction may be greater than 1 degree and less than 10 degrees. For another example, the diffusion angle of the green light emitted from the semiconductor laser element 20 in the fast axis direction may be greater than 10 degrees and less than 30 degrees, and the diffusion angle in the slow axis direction may be greater than 1 degree and less than 10 degrees. For another example, the diffusion angle of the red light emitted from the semiconductor laser element 20 in the fast axis direction may be greater than 15 degrees and less than 40 degrees, and the diffusion angle in the slow axis direction may be greater than 1 degree and less than 10 degrees.

[0165] (Base 30)

[0166] The base 30 has an upper surface 31A, a lower surface 31B, and one or more side surfaces 31C. The upper surface 31A can be said to be a mounting surface for mounting other components. The shape of the upper surface 31A is a rectangle. The rectangle of the upper surface 31A can have a short side and a long side. In addition, the shape of the upper surface 31A may not be a rectangle.

[0167] The outer shape of the base 30 when viewed from above is a rectangle. The rectangle of the base 30 may have a short side and a long side. In addition, the outer shape of the base 30 when viewed from above may not be a rectangle. When viewed from above, the base 30 may have an outer shape in which the length of one direction (hereinafter, this direction is referred to as the short side direction of the base 30) is smaller than the length of the direction perpendicular to it (hereinafter, this direction is referred to as the long side direction of the base 30). In the illustrated base 30, the short side direction is the same direction as the X direction, and the long side direction is the same direction as the Y direction.

[0168] The base 30 may be configured to include a substrate 32A and an upper metal component 32B. In addition, the base 30 may also be configured to include a lower metal component 32C. The upper metal component 32B is provided on the upper surface side of the substrate 32A. The lower metal component 32C is provided on the lower surface side of the substrate 32A. The base 30 further includes a wiring layer 33. The wiring layer 33 is provided on the upper metal component 32B.

[0169] The substrate 32A has insulating properties. The substrate 32A is formed of, for example, silicon nitride, aluminum nitride, or silicon carbide. The main material of the substrate 32A can be selected from ceramics with relatively good heat dissipation properties (high thermal conductivity).

[0170] The upper metal member 32B is mainly made of metal such as copper or aluminum. The upper metal member 32B has one or more metal layers. The upper metal member 32B may have a plurality of metal layers mainly made of different metals.

[0171] The main material of the lower metal component 32C is a metal such as copper or aluminum. The lower metal component 32C has one or more metal layers. The lower metal component 32C may have a plurality of metal layers whose main materials are different metals.

[0172] The wiring layer 33 can be formed using metal. For example, the wiring layer 33 can be formed using AuSn solder (AuSn metal layer).

[0173] For example, the short side direction or the length in the short side direction of the base 30 is 500 μm or more and 2000 μm or less. In addition, the long side direction or the length in the long side direction of the base 30 is 1000 μm or more and 2500 μm or less. In addition, the difference between the length in the long side direction and the length in the short side direction of the base 30 is 100 μm or more and 1000 μm or less.

[0174] For example, the thickness of the base 30 (the width in the direction perpendicular to the upper surface 31A) is 200 μm or more and 400 μm or less. For another example, the thickness of the substrate 32A is 100 μm or more and 300 μm or less. For another example, the thickness of the upper metal component 32B is 30 μm or more and 100 μm or less. For another example, the thickness of the lower metal component 32C is 30 μm or more and 100 μm or less. For another example, the thickness of the wiring layer 33 is 1 μm or more and 10 μm or less.

[0175] (Reflection member 40)

[0176] The reflecting member 40 has a lower surface 41A and a light reflecting surface 41B for reflecting light. In addition, the light reflecting surface 41B is inclined relative to the lower surface 41A. The straight line connecting the lower end and the upper end of the light reflecting surface 41B is inclined relative to the lower surface 41A. The angle at which the light reflecting surface 41B is inclined relative to the lower surface 41A is referred to as the inclination angle of the light reflecting surface 41B.

[0177] The light reflecting surface 41B is a flat surface. Alternatively, the light reflecting surface 41B may be a curved surface. The inclination angle of the light reflecting surface 41B is 45 degrees. Alternatively, the inclination angle of the light reflecting surface 41B may not be 45 degrees.

[0178] The main material of the reflector 40 can be glass, metal, etc. A heat-resistant material can be used exclusively as the main material of the reflector 40. For example, glass such as quartz or BK7 (borosilicate glass), and metal such as Al can be used as the main material. The reflector 40 can also be formed using Si as the main material.

[0179] The general shape of the reflective member 40 is formed by a material, and the light reflecting surface 41B is formed on the surface of the general shape. In this case, the light reflecting surface 41B is formed by providing a reflective film 42 on the surface where the light reflecting surface 41B is to be formed. The reflective film 42 can be made of, for example, a metal layer such as Ag or Al, or a dielectric multilayer film such as Ta2O5 / SiO2, TiO2 / SiO2, or Nb2O5 / SiO2.

[0180] The reflectivity of the light reflecting surface 41B relative to the peak wavelength of the light irradiated to the light reflecting surface 41B is 90% or more. In addition, the reflectivity may be 95% or more. In addition, the reflectivity may be 99% or more. The light reflectivity is 100% or less or less than 100%.

[0181] (Protection element 50)

[0182] The protection element 50 has an upper surface 51A, a lower surface 51B, and one or more side surfaces 51C. The protection element 50 is in the shape of a rectangular parallelepiped. In addition, the protection element 50 may not be in the shape of a rectangular parallelepiped.

[0183] The protection element 50 is used to prevent an excessive current from flowing through a specific element (for example, a semiconductor laser element) and being destroyed. As the protection element 50, for example, a Zener diode can be cited. In addition, as the Zener diode, a Zener diode formed of Si can be used.

[0184] (Wiring 60)

[0185] The wiring 60 is a linear conductive material with two ends as a junction. The junctions at the two ends become the junctions with other components. The wiring 60 is used for electrical connection between two components. The wiring 60 is, for example, a metal wire. For example, gold, aluminum, silver, copper, etc. can be used as the metal.

[0186] (Optical component 70)

[0187] The optical component 70 has an upper surface 71A, a lower surface 71B, and one or more side surfaces 71C. The optical component 70 imparts an optical effect to light incident on the optical component 70. The optical effect imparted to the light by the optical component 70 includes, for example, focusing, collimation, diffusion, polarization, diffraction, combining, guiding, reflection, wavelength conversion, and the like.

[0188] The optical component 70 has an optical action surface that imparts an optical effect. The upper surface 71A, the lower surface 71B, or the side surface 71C can be the optical action surface. Alternatively, the optical action surface may be provided at a position different from the upper surface 71A, the lower surface 71B, and the side surface 71C. For example, the optical action surface may be formed inside the optical component 70 instead of on the surface.

[0189] The optical component 70 may have one or more lens surfaces 71D. The lens surface 71D is an optical action surface of the optical component 70. In addition, the optical component 70 having the lens surface 71D may also be referred to as a lens component. The light emitted from the optical component 70 through the lens surface 71D is given a focusing, diffusion or collimation optical effect by the optical component 70. For example, the optical component 70 is a collimating lens that causes the light incident on the optical component 70 to be collimated light and emitted.

[0190] One or each lens surface 71D is provided on the upper surface 71A side. In addition, the lens surface 71D may also be provided on the lower surface 71B side. The upper surface 71A and the lower surface 71B are planes. One or each lens surface 71D intersects with the upper surface 71A. When viewed from above, one or each lens surface 71D is surrounded by the upper surface 71A.

[0191] When viewed from above, the outer shape of the optical component 70 is rectangular. In addition, the outer shape of the optical component 70 when viewed from above may not be rectangular. The lower surface 71B is a plane. No lens surface 71D is formed on the lower surface 71B side of the optical component 70. The shape of the lower surface 71B is rectangular. In addition, the shape of the lower surface 71B may not be rectangular.

[0192] In the optical component 70, the portion overlapping with the lens surface 71D when viewed from above is set as the lens portion 72A. In the optical component 70, the portion overlapping with the upper surface 71A when viewed from above is set as the non-lens portion 72B. The lower surface 71B has an area constituting the lower surface of one or each lens portion 72A and an area constituting the lower surface of the non-lens portion 72B.

[0193] The optical component 70 may have a plurality of lens surfaces 71D formed continuously in one direction. The direction in which the plurality of lens surfaces 71D are arranged in a plan view is referred to as a lens connection direction. In the illustrated optical component 70, the connection direction is the same direction as the X direction.

[0194] The plurality of lens surfaces 71D are formed so that the vertices of the lens surfaces 71D are arranged on a straight line. The imaginary straight line connecting the vertices is parallel to the lower surface 71B of the optical member 70. The parallelism here includes an error within ±5 degrees.

[0195] The curvatures of a part or all of the plurality of lens surfaces 71D and two or more lens surfaces 71D may be the same. The plurality of lens surfaces 71D may all have the same curvature.

[0196] The optical component 70 is light-transmissive. The transmittance of the optical component 70 relative to the peak wavelength of the light incident on the optical component 70 is 80% or more. The optical component 70 may also include a region with light transmissivity and a region without light transmissivity (hereinafter referred to as a non-light-transmissive region). In the non-light-transmissive region, the transmittance relative to the peak wavelength of the light incident on the optical component 70 is 50% or less. The optical component 70 can be formed using glass such as BK7, for example.

[0197] Next, the light emitting device 1 will be described.

[0198] (Light-emitting device 1)

[0199] In the light emitting device 1, a plurality of semiconductor laser elements 20 are arranged in the internal space of the package 10. The plurality of semiconductor laser elements 20 are arranged on the first upper surface 11A. In a plan view, the plurality of semiconductor laser elements 20 are surrounded by a frame portion 11N.

[0200] The plurality of semiconductor laser elements 20 are arranged in a first direction. The plurality of semiconductor laser elements 20 emit light in a second direction. The second direction is a direction perpendicular to the first direction. The second direction is a lateral direction relative to the first upper surface 11A. In the illustrated light emitting device 1, the first direction is the same direction as the X direction. In addition, the second direction is the same direction as the Y direction.

[0201] The plurality of semiconductor laser elements 20 are arranged at equal intervals in the first direction. The plurality of semiconductor laser elements 20 are arranged so that the light emitting surfaces 22 of each other are not offset in the second direction. The offset in the second direction of the light emitting surfaces 22 between the plurality of semiconductor laser elements 20 is less than ±10 μm. In addition, the light emitting surfaces 22 of the plurality of semiconductor laser elements 20 may be intentionally offset. For example, the position of the light emitting surface 22 may be adjusted in consideration of the warping of the first upper surface 11A.

[0202] In the light emitting device 1 , one or more submounts 30 are disposed in the internal space of the package 10 . One or more submounts 30 are disposed on the first upper surface 11A. A plurality of semiconductor laser elements 20 are disposed on one or more submounts 30 . The semiconductor laser element 20 is disposed on one or each submount 30 .

[0203] The plurality of semiconductor laser elements 20 are disposed on the first upper surface 11A via the base 30 , respectively. The plurality of semiconductor laser elements 20 are disposed on the wiring layer 33 of the auxiliary substrate 30 , respectively.

[0204] One or more semiconductor laser elements 20 are disposed on one susceptor 30. In the light emitting device 1 shown in the figure, only one semiconductor laser element 20 is disposed on one susceptor 30. By using the susceptor 30, the height from the first upper surface 11A to the light emission point of the semiconductor laser element 20 can be adjusted.

[0205] The one or more susceptors 30 may be composed of a plurality of susceptors 30 having the same thickness. Here, “same thickness” includes a difference within ±20 μm. By making the thickness uniform among the plurality of susceptors 30 , it is easy to make the height of the light emission point uniform among the plurality of semiconductor laser elements 20 .

[0206] The base 30 having one semiconductor laser element 20 disposed thereon is disposed such that the short side direction of the upper surface 31A is parallel to the first direction. This can increase the number of semiconductor laser elements 20 that can be disposed in the first direction.

[0207] In the light emitting device 1, the plurality of reflective members 40 are arranged in the internal space of the package 10. The plurality of reflective members 40 are arranged on the first upper surface 11A. In a plan view, the plurality of reflective members 40 are surrounded by the frame portion 11N.

[0208] The plurality of reflecting components 40 are arranged in a row in the first direction. The plurality of reflecting components 40 are all arranged at a position away from the semiconductor laser element 20 in the second direction. The plurality of reflecting components 40 are installed in such a manner that the upper edge of each light reflecting surface 41B is arranged on the same straight line parallel to the first direction. The deviation of the upper edge of the light reflecting surface 41B between the plurality of reflecting components 40 in the second direction is less than ±10 μm.

[0209] One reflecting member 40 is arranged for one or more semiconductor laser elements 20. In the light emitting device 1 shown in the figure, one reflecting member 40 is arranged for one semiconductor laser element 20. Compared with the case where one reflecting member 40 is arranged for two or more semiconductor laser elements 20, the length of the reflecting member 40 in the first direction can be shortened by arranging one reflecting member 40 for one semiconductor laser element 20, and the influence of the rotational deviation in the installation of the reflecting member 40 can be reduced.

[0210] Each of the plurality of reflecting members 40 reflects light emitted from any one of the plurality of semiconductor laser elements 20. Light emitted from the semiconductor laser element 20 is irradiated onto the light reflecting surface 41B of each of the plurality of reflecting members 40. The light reflecting surface 41B of each of the plurality of reflecting members 40 reflects light emitted laterally from the semiconductor laser element 20 upward.

[0211] In each of the plurality of semiconductor laser elements 20, the light passing through the optical axis emitted from the light emitting surface 22 is reflected by the light reflecting surface 41B and travels in a direction perpendicular to the first upper surface 11A. In other words, the angle formed by the incident light and the reflected light of the light passing through the optical axis relative to the light reflecting surface 41B is a right angle. In addition, the right angle here means converging within the range of 90 degrees ± 5 degrees.

[0212] In the light emitting device 1, one or more protective elements 50 are arranged in the internal space of the package 10. The protective element 50 is arranged on the upper surface 31A of the base 30. Alternatively, the protective element 50 may be arranged on a plane other than the upper surface 31A of the base 30 existing in the internal space of the package 10. The protective element 50 plays a role in protecting the semiconductor laser element 20.

[0213] The plurality of semiconductor laser elements 20 are electrically connected to the package 10 via the plurality of wirings 60. The plurality of semiconductor laser elements 20 are electrically connected to the first wiring portion 12A1, respectively. Also, the plurality of semiconductor laser elements 20 are electrically connected to the second wiring portion 12A2, respectively, via the first wiring portion 12A1.

[0214] In the light emitting device 1, the optical component 70 is fixed to the package 10. The optical component 70 is arranged above the first upper surface 11A and the plurality of semiconductor laser elements 20. The optical component 70 is bonded to the cover 14. The optical component 70 is fixed to the base 11 via the cover 14. In addition, the optical component 70 may not be fixed to the base 11 via the cover 14.

[0215] The lower surface 71B of the optical component 70 and the upper surface 14A of the cover 14 are bonded via an adhesive. The adhesive is mainly provided on the non-lens portion 72B of the optical component 70. This can avoid placing the adhesive on the optical path of the light traveling toward the lens portion 72A.

[0216] The light reflected by the plurality of reflection members 40 is incident on the optical action surface of the optical member 70. The optical member 70 applies an optical action to the light incident on the optical action surface, and then the light is emitted from the optical member 70.

[0217] Among the plurality of semiconductor laser elements 20, the region where the main portion of light emitted from a certain semiconductor laser element 20 is incident on the optical action surface does not overlap with the region where the main portion of light emitted from another semiconductor laser element 20 is incident on the optical action surface. In the light emitting device 1, this relationship holds true for any semiconductor laser element 20.

[0218] Here, among the lights emitted from the plurality of semiconductor laser elements 20, a portion corresponding to the light emitted from each semiconductor laser element 20 is referred to as partial light for distinction. It can be said that the lights emitted from the plurality of semiconductor laser elements 20 are composed of a plurality of partial lights.

[0219] The partial lights of the plurality of semiconductor laser elements 20 are arranged in the first direction and emitted from the package 10. The partial lights of the plurality of semiconductor laser elements 20 are arranged in the first direction and incident on the optical component 70. The main parts of the partial lights do not overlap each other and are irradiated to the lower surface 71B of the optical component 70.

[0220] The plurality of partial lights are emitted from the upper surface 14A of the package 10 in such a manner that the point where the light passing through the optical axis in each of the partial lights passes through the upper surface 14A is located on a straight line parallel to the first direction. In addition, the “object is located on a straight line parallel to the first direction” here includes the object being located within a range of ±50 μm from the imaginary straight line parallel to the first direction to the second direction.

[0221] The optical component 70 includes a plurality of lens surfaces 71D corresponding one-to-one to the plurality of semiconductor laser elements 20. That is, the optical component 70 can also include a plurality of lens portions 72A corresponding one-to-one to the plurality of semiconductor laser elements 20.

[0222] The connection direction of the plurality of lens surfaces 71D is parallel to the first direction when viewed from above. The vertices of the lenses in the plurality of lens portions 72A are located on a straight line parallel to the first direction when viewed from above. Here, "the object is located on a straight line parallel to the first direction when viewed from above" includes the object being located within a range of ±100 μm from an imaginary straight line parallel to the first direction to the second direction when viewed from above.

[0223] In the light emitting device 1, a plurality of partial lights pass through the corresponding lens surface 71D, respectively. Light of a main portion of each partial light converges on the corresponding lens surface 71D when viewed from above. In the light emitting device 1, light passing through the optical axis of each of the plurality of partial lights passes through the vertex of the corresponding lens surface 71D. In addition, "the object passes through the vertex of the lens surface 71D" here includes the object passing through the inside of a circle with a radius of ±300 μm from the vertex of the lens surface 71D when viewed from above.

[0224] The light emitting device 1 can obtain ideal output light by arranging the optical axes of multiple partial lights on a straight line so that the light is incident on the optical action surface. For example, by arranging the light passing through the optical axis in each partial light on a straight line and passing through the vertices of each lens surface 71D, an ideal optical effect can be given to each partial light.

[0225] Next, a first light emitting device 1A, a second light emitting device 1B, and a third light emitting device 1C, each of which is one embodiment of the light emitting device 1 , will be described.

[0226] (First Light Emitting Device 1A)

[0227] The plurality of semiconductor laser elements 20 included in first light emitting device 1A include a semiconductor laser element 20 that emits light of the first color having a first emission peak wavelength. Here, semiconductor laser element 20 that emits light of the first color having a first emission peak wavelength is referred to as first semiconductor laser element 20A.

[0228] The first light emitting device 1A includes a plurality of first semiconductor laser elements 20A. The semiconductor laser elements 20 having emission peak wavelengths within ±10 nm of the first wavelength are all included in the first semiconductor laser element 20A. The maximum difference in emission peak wavelengths between the plurality of first semiconductor laser elements 20A included in the first light emitting device 1A may not exceed 10 nm.

[0229] The first wavelength is, for example, a wavelength in the range of 420 nm to 494 nm. For another example, the first wavelength may be a wavelength in the range of 440 nm to 470 nm. For another example, the first wavelength may be a wavelength of 455 nm or 465 nm.

[0230] The first color is, for example, any one of red, green, and blue. In addition, the first color is, for example, blue.

[0231] The plurality of semiconductor laser elements 20 included in the first light emitting device 1A do not include a second semiconductor laser element 20B described below. In other words, the first light emitting device 1A does not include the second semiconductor laser element 20B.

[0232] The plurality of semiconductor laser elements 20 included in the first light emitting device 1A do not include a fourth semiconductor laser element 20D described below. In other words, the first light emitting device 1A does not include the fourth semiconductor laser element 20D.

[0233] For example, all of the plurality of semiconductor laser elements 20 included in the first light emitting device 1A may be composed of the first semiconductor laser element 20A. The first light emitting device 1A may include a semiconductor laser element 20 that emits light of a color different from the first color and the color of light emitted from the second semiconductor laser element 20B.

[0234] The plurality of reflective members 40 included in the first light emitting device 1A include a plurality of first reflective members 40A that reflect light emitted from the plurality of first semiconductor laser elements 20A. The plurality of first reflective members 40A each reflect light of the first color emitted from the first semiconductor laser element 20A.

[0235] Each of the plurality of first reflecting members 40A has a light reflecting surface 41B provided with a reflecting film 42 having a reflectivity of 90% or more for the first wavelength. Here, the reflecting film 42 in the first reflecting member 40A is referred to as a first reflecting film 42A, and the light reflecting surface 41B in the first reflecting member 40A is referred to as a first light reflecting surface 41B1.

[0236] The reflectivity of the first reflective film 42A to the first wavelength is higher than the reflectivity to the second wavelength described later. The difference between the reflectivity of the first reflective film 42A to the first wavelength and the reflectivity to the second wavelength is 5% or more. Alternatively, the difference in reflectivity may be 10% or more. Alternatively, the difference in reflectivity may be 15% or more. Alternatively, the difference in reflectivity may be 20% or more. Alternatively, the difference in reflectivity may be 25% or more. In addition, the reflectivity of the first reflective film 42A to the second wavelength is 0% or more.

[0237] In the first light emitting device 1A, since the plurality of semiconductor laser elements 20 and the plurality of reflective members 40 are arranged in the package 10, it can be said that the plurality of first semiconductor laser elements 20A and the plurality of first reflective members 40A are necessarily arranged in the package 10. Here, for convenience, the package 10 included in the first light emitting device 1A is referred to as a first package.

[0238] (Second Light Emitting Device 1B)

[0239] The plurality of semiconductor laser elements 20 included in second light emitting device 1B include a semiconductor laser element 20 emitting light of the second color having a second wavelength as a peak emission wavelength. Here, semiconductor laser element 20 emitting light of the second color having a second wavelength as a peak emission wavelength is referred to as second semiconductor laser element 20B.

[0240] The second light emitting device 1B includes a plurality of second semiconductor laser elements 20B. The semiconductor laser elements 20 having emission peak wavelengths within ±10 nm of the second wavelength are all included in the second semiconductor laser element 20B. The maximum difference in emission peak wavelengths between the plurality of second semiconductor laser elements 20B included in the second light emitting device 1B may not exceed 10 nm.

[0241] The second wavelength is, for example, a wavelength in the range of 495 nm to 570 nm. For another example, the second wavelength may be a wavelength in the range of 500 nm to 550 nm. The second color is a color different from the first color.

[0242] The second color is, for example, any one of red, green, and blue. In addition, the light of the second color is, for example, green light.

[0243] The difference between the first wavelength and the second wavelength is 30 nm or more. In addition, the difference between the first wavelength and the second wavelength may be 50 nm or more. In addition, the difference between the first wavelength and the second wavelength may be 100 nm or more.

[0244] The plurality of semiconductor laser elements 20 included in the second light emitting device 1B do not include the first semiconductor laser element 20A. In other words, the second light emitting device 1B does not include the first semiconductor laser element 20A.

[0245] The plurality of semiconductor laser elements 20 included in the second light emitting device 1B do not include a third semiconductor laser element 20C described later. In other words, the second light emitting device 1B does not include the third semiconductor laser element 20C.

[0246] For example, all of the plurality of semiconductor laser elements 20 included in the second light emitting device 1B may be composed of the second semiconductor laser element 20B. The second light emitting device 1B may include a semiconductor laser element 20 that emits light having a color different from both the first color light and the second color light.

[0247] The plurality of reflective members 40 included in the second light emitting device 1B include a plurality of second reflective members 40B that reflect the light emitted from the plurality of second semiconductor laser elements 20B. The plurality of second reflective members 40B each reflect the light of the second color emitted from the second semiconductor laser element 20B.

[0248] The plurality of second reflective members 40B each have a light reflecting surface 41B provided with a reflective film 42 having a reflectivity of 90% or more for the second wavelength. Here, the reflective film 42 in the second reflective member 40B is referred to as a second reflective film 42B, and the light reflecting surface 41B in the second reflective member 40B is referred to as a second light reflecting surface 41B2.

[0249] The reflectivity of the second reflective film 42B to the second wavelength is higher than the reflectivity to the first wavelength. The difference between the reflectivity of the second reflective film 42B to the second wavelength and the reflectivity to the first wavelength is 5% or more. Alternatively, the difference in reflectivity may be 10% or more. Alternatively, the difference in reflectivity may be 15% or more. Alternatively, the difference in reflectivity may be 20% or more. Alternatively, the difference in reflectivity may be 25% or more. In addition, the reflectivity of the second reflective film 42B to the first wavelength is 0% or more.

[0250] In the second light emitting device 1B, since the plurality of semiconductor laser elements 20 and the plurality of reflective members 40 are arranged in the package 10, it can be said that the plurality of second semiconductor laser elements 20B and the plurality of second reflective members 40B are necessarily arranged in the package 10. Here, for convenience, the package 10 included in the second light emitting device 1B is referred to as a second package.

[0251] The second package is a package 10 having the same outer shape as the first package. In addition, the strict shape of the outer shape of the second package can be consistent with the strict shape of the outer shape of the first package. The second package can be the same package 10 as the first package. In addition, the internal space of the package and the internal structure of the package can also be different from each other.

[0252] The reflectivity of the first reflection film 42A to the light of the first wavelength is higher than the reflectivity of the second reflection film 42B to the light of the first wavelength. The first light reflection surface 41B1 of the first reflection member 40A has a higher reflectivity to the first wavelength than the second light reflection surface 41B2 of the second reflection member 40B.

[0253] The reflectivity of the second reflection film 42B to the light of the second wavelength is higher than the reflectivity of the first reflection film 42A to the light of the second wavelength. The second light reflection surface 41B2 of the second reflection member 40B has a higher reflectivity to the second wavelength than the first light reflection surface 41B1 of the first reflection member 40A.

[0254] (Third Light Emitting Device 1C)

[0255] The plurality of semiconductor laser elements 20 included in the third light emitting device 1C include a semiconductor laser element 20 that emits first color light having a third wavelength as its peak emission wavelength. Here, the semiconductor laser element 20 that emits first color light having a third wavelength as its peak emission wavelength is referred to as a third semiconductor laser element 20C.

[0256] The plurality of semiconductor laser elements 20 included in the third light emitting device 1C include a semiconductor laser element 20 that emits second color light having a fourth wavelength. Here, the semiconductor laser element 20 that emits second color light having a fourth wavelength is referred to as a fourth semiconductor laser element 20D.

[0257] The third light emitting device 1C includes one or more third semiconductor laser elements 20C. In addition, the third light emitting device 1C can include a plurality of third semiconductor laser elements 20C. In addition, all semiconductor laser elements 20 having emission peak wavelengths within ±10 nm of the third wavelength are included in the third semiconductor laser element 20C. The maximum difference in emission peak wavelengths between the plurality of third semiconductor laser elements 20C included in the third light emitting device 1C can be no more than 10 nm.

[0258] The third light emitting device 1C includes one or more fourth semiconductor laser elements 20D. In addition, the third light emitting device 1C can include multiple fourth semiconductor laser elements 20D. In addition, all semiconductor laser elements 20 whose emission peak wavelengths are within ±10nm of the fourth wavelength are included in the fourth semiconductor laser element 20D. The maximum difference in emission peak wavelengths between the multiple fourth semiconductor laser elements 20D included in the third light emitting device 1C can be no more than 10nm.

[0259] The third wavelength is, for example, a wavelength in the range of 420 nm to 494 nm. For another example, the third wavelength may be a wavelength in the range of 440 nm to 470 nm. For another example, the third wavelength may be any wavelength of 455 nm or 465 nm.

[0260] The difference between the first wavelength and the third wavelength is less than 15 nm. In addition, the difference between the first wavelength and the third wavelength can be less than 10 nm. In addition, the first wavelength and the third wavelength can be the same wavelength. In addition, the same here includes a difference within 5 nm.

[0261] The fourth wavelength is, for example, a wavelength in the range of 495 nm to 570 nm. For another example, the second wavelength may be a wavelength in the range of 500 nm to 550 nm. The second color light is, for example, green light.

[0262] The difference between the second wavelength and the fourth wavelength is less than 15 nm. In addition, the difference between the second wavelength and the fourth wavelength can be less than 10 nm. In addition, the second wavelength and the fourth wavelength can be the same wavelength. In addition, the same here includes a difference within 5 nm.

[0263] The difference between the third wavelength and the fourth wavelength is 30 nm or more. In addition, the difference between the third wavelength and the fourth wavelength may be 50 nm or more. In addition, the difference between the third wavelength and the fourth wavelength may be 100 nm or more.

[0264] Furthermore, the third light emitting device 1C may include, in addition to one or more third semiconductor laser elements 20C and one or more fourth semiconductor laser elements 20D, a semiconductor laser element 20 that emits light having a color different from both the first color light and the second color light.

[0265] The plurality of reflecting members 40 included in the third light emitting device 1C include one or more third semiconductor laser elements 20C and a plurality of third reflecting members 40C that reflect light emitted from one or more fourth semiconductor laser elements 20D. The plurality of third reflecting members 40C include reflecting members 40 that reflect light of a first color emitted from the third semiconductor laser element 20C and reflecting members 40 that reflect light of a second color emitted from the fourth semiconductor laser element 20D.

[0266] The plurality of third reflecting members 40C each have a light reflecting surface 41B provided with a reflecting film 42 having a reflectivity of 90% or more for the third wavelength and the fourth wavelength. Here, the reflecting film 42 in the third reflecting member 40C is referred to as a third reflecting film 42C, and the light reflecting surface 41B in the third reflecting member 40C is referred to as a third light reflecting surface 41B3.

[0267] The difference between the reflectivity of the third reflective film 42C for the third wavelength and the reflectivity of the fourth wavelength is smaller than the difference between the reflectivity of the first reflective film 42A for the first wavelength and the reflectivity of the second wavelength. The difference between the reflectivity of the third reflective film 42C for the third wavelength and the reflectivity of the fourth wavelength is less than 1 / 2 of the difference between the reflectivity of the first reflective film 42A for the first wavelength and the reflectivity of the second wavelength.

[0268] The difference between the reflectivity of the third reflective film 42C for the fourth wavelength and the reflectivity of the third wavelength is smaller than the difference between the reflectivity of the second reflective film 42B for the second wavelength and the reflectivity of the first wavelength. The difference between the reflectivity of the third reflective film 42C for the fourth wavelength and the reflectivity of the third wavelength is less than 1 / 2 of the difference between the reflectivity of the second reflective film 42B for the second wavelength and the reflectivity of the first wavelength.

[0269] The difference between the reflectivity of the third reflective film 42C for the third wavelength and the reflectivity for the fourth wavelength is greater than 0% and less than 4.0%. Alternatively, the difference in reflectivity may be greater than 0% and less than 3.0%. Alternatively, the difference in reflectivity may be greater than 0% and less than 2.0%. Alternatively, the difference in reflectivity may be greater than 0% and less than 1.0%.

[0270] In the third light emitting device 1C, since the plurality of semiconductor laser elements 20 and the plurality of reflective members 40 are disposed in the package 10, it can be said that one or more third semiconductor laser elements 20C, one or more fourth semiconductor laser elements 20D, and the plurality of third reflective members 40C are necessarily disposed in the package 10. Here, for convenience, the package 10 included in the third light emitting device 1C is referred to as a third package.

[0271] The third package is a package 10 having the same outer shape as the first package. In addition, the strict shape of the outer shape of the third package can be consistent with the strict shape of the outer shape of the first package. The third package can be the same package 10 as the first package. In addition, the internal space of the package and the internal structure of the package can also be different from each other.

[0272] The third package is a package 10 having the same outer shape as the second package. In addition, the strict shape of the outer shape of the third package can be consistent with the strict shape of the outer shape of the second package. The third package can be the same package 10 as the second package. In addition, the internal space of the package and the internal structure of the package can also be different from each other.

[0273] In the third light emitting device 1C, a plurality of semiconductor laser elements 20 may be arranged such that the light emitting surfaces 22 of semiconductor laser elements 20 emitting light of the same color coincide with each other and the light emitting surfaces 22 of semiconductor laser elements 20 emitting light of different colors are intentionally shifted.

[0274] The third reflective film 42C has a higher reflectivity for light of the first wavelength than the second reflective film 42B. The third light reflecting surface 41B3 of the third reflective member 40C has a higher reflectivity for the first wavelength than the second light reflecting surface 41B2 of the second reflective member 40B.

[0275] The third reflective film 42C has a higher reflectivity for the second wavelength than the first reflective film 42A. The third light reflecting surface 41B3 of the third reflective member 40C has a higher reflectivity for the second wavelength than the first light reflecting surface 41B1 of the first reflective member 40A.

[0276] The third reflective film 42C has a higher reflectivity for light of the third wavelength than the second reflective film 42B. The third light reflecting surface 41B3 of the third reflective member 40C has a higher reflectivity for the third wavelength than the second light reflecting surface 41B2 of the second reflective member 40B.

[0277] The third reflective film 42C has a higher reflectivity for light of the fourth wavelength than the first reflective film 42A. The third light reflecting surface 41B3 of the third reflective member 40C has a higher reflectivity for the fourth wavelength than the first light reflecting surface 41B1 of the first reflective member 40A.

[0278] The reflectivity of the third reflective film 42C for the light of the first wavelength is equal to or greater than the reflectivity of the first reflective film 42A for the light of the first wavelength minus 1.0%. The reflectivity of the first reflective film 42A for the light of the third wavelength is equal to or greater than the reflectivity of the third reflective film 42C for the light of the third wavelength minus 1.0%.

[0279] The reflectivity of the third reflective film 42C for the second wavelength is equal to or greater than the reflectivity of the second reflective film 42B for the second wavelength minus 1.0%. The reflectivity of the second reflective film 42B for the fourth wavelength is equal to or greater than the reflectivity of the third reflective film 42C for the fourth wavelength minus 1.0%.

[0280] The reflectivity of the first reflective film 42A to the third wavelength is higher than the reflectivity to the fourth wavelength. The difference between the reflectivity of the first reflective film 42A to the third wavelength and the reflectivity to the fourth wavelength is 5% or more. Alternatively, the difference in reflectivity may be 10% or more. Alternatively, the difference in reflectivity may be 15% or more. Alternatively, the difference in reflectivity may be 20% or more. Alternatively, the difference in reflectivity may be 25% or more. In addition, the reflectivity of the first reflective film 42A to the fourth wavelength is 0% or more.

[0281] The reflectivity of the second reflective film 42B to the fourth wavelength is higher than the reflectivity to the third wavelength. The difference between the reflectivity of the second reflective film 42B to the fourth wavelength and the reflectivity to the third wavelength is 5% or more. Alternatively, the difference in reflectivity may be 10% or more. Alternatively, the difference in reflectivity may be 15% or more. Alternatively, the difference in reflectivity may be 20% or more. Alternatively, the difference in reflectivity may be 25% or more. In addition, the reflectivity of the second reflective film 42B to the third wavelength is 0% or more.

[0282] The difference between the reflectivity of the third reflective film 42C for the first wavelength and the reflectivity for the second wavelength is greater than 0% and less than 4.0%. Alternatively, the difference in reflectivity may be greater than 0% and less than 3.0%. Alternatively, the difference in reflectivity may be greater than 0% and less than 2.0%. Alternatively, the difference in reflectivity may be greater than 0% and less than 1.0%.

[0283] The thickness of the third reflective film 42C is greater than the thickness of the first reflective film 42A. The thickness of the third reflective film 42C is greater than the thickness of the second reflective film 42B. In the case where the light reflecting surface 41B is formed by the reflective film 42 of the dielectric multilayer film, the number of layers of the dielectric multilayer film in the third reflective film 42C is greater than the number of layers of the dielectric multilayer film in the first reflective film 42A. In addition, the number of layers of the dielectric multilayer film in the third reflective film 42C is greater than the number of layers of the dielectric multilayer film in the second reflective film 42B.

[0284] When manufacturing a plurality of first light emitting devices 1A and a plurality of second light emitting devices 1B, it is necessary to prepare a plurality of first semiconductor laser elements 20A, a plurality of first reflecting members 40A, a plurality of second semiconductor laser elements 20B, and a plurality of second reflecting members 40B. In this case, if a common reflecting member 40 is used instead of the first reflecting member 40A and the second reflecting member 40B, it is necessary to provide a reflecting film 42 having a high reflectivity for either the first wavelength or the second wavelength, or for either the first color light or the second color light, and compared with providing a reflecting film 42 having a high reflectivity only for the first wavelength or the first color, the materials and time required for manufacturing the reflecting member 40 increase.

[0285] For example, in the case where a plurality of reflective components 40 are manufactured by dividing a single base material, the plurality of reflective components 40 manufactured from the single base material can be mounted on a plurality of light emitting devices 1. In this case, if the number of reflective components 40 manufactured from the single base material can supply the number of reflective components 40 required for manufacturing a plurality of first light emitting devices 1A and a plurality of second light emitting devices 1B, there is an advantage in using a common reflective component 40. This is because, compared with providing two reflective films with different characteristics on a single base material to obtain the first reflective component 40A and the second reflective component 40B respectively, it is more efficient to provide a single reflective film to manufacture the common reflective component 40.

[0286] On the other hand, when the number of reflective components 40 manufactured from one base material cannot supply the number of reflective components 40 required for manufacturing multiple first light-emitting devices 1A, and also cannot supply the number of reflective components 40 required for manufacturing multiple second light-emitting devices 1B, it can be said that it is more efficient to manufacture only the first reflective components 40A from one base material and only the second reflective components 40B from another base material.

[0287] Thus, when manufacturing a plurality of light emitting devices 1 including the first light emitting device 1A and the second light emitting device 1B, it is sometimes more efficient to manufacture the first reflecting member 40A and the second reflecting member 40B separately. In addition, the above is merely an example, and for other reasons, it is also preferable to manufacture the first reflecting member 40A and the second reflecting member 40B separately.

[0288] Under such circumstances, when manufacturing a light-emitting device 1 having a third semiconductor laser element 20C that emits light of a first color and a fourth semiconductor laser element 20D that emits light of a second color, it is more efficient when the reflection component 40 corresponding to the third semiconductor laser element 20C adopts the first reflection component 40A adopted by the first light-emitting device 1A, and the reflection component 40 corresponding to the fourth semiconductor laser element 20D adopts the second reflection component 40B adopted by the second light-emitting device 1B.

[0289] However, in this embodiment, the third light emitting device 1C uses the third reflecting member 40C. This can improve the quality of light emitted from the third light emitting device 1C.

[0290] like Fig.13 As shown, in the light emitting device 1, even when the two semiconductor laser elements 20 emit light L1 and light L2 from the light emission points at the same height, the position of the light incident on the optical component 70 is shifted in the second direction due to the component tolerance of the reflective component 40. The quality of the light emitted from the light emitting device 1, in other words, the degree of deviation from the ideal design, is related to various factors such as the component tolerance of the manufactured components and the installation tolerance when the components are installed, so reducing the degree of deviation caused by these factors will improve the quality of the light emitted from the light emitting device 1.

[0291] When manufacturing the light emitting device 1 including the third semiconductor laser element 20C emitting light of the first color and the fourth semiconductor laser element 20D emitting light of the second color, if the first reflecting member 40A and the second reflecting member 40B are used, the base material for manufacturing the first reflecting member 40A is different from the base material for manufacturing the second reflecting member 40B, and thus the quality is affected by the component tolerance between the base materials, the deviation of the processing in the manufacturing process of the reflecting member 40, and the like. On the other hand, if the third reflecting member 40C is used, a plurality of third reflecting members 40C manufactured from the same base material can be used for the light emitting device 1, so that the influence of the component tolerance between the base materials, the deviation of the processing in the manufacturing process of the reflecting member 40, and the like can be reduced, and the quality of the light emitted from the light emitting device 1 can be improved.

[0292] The above description is also the same when the two semiconductor laser elements 20 emit light from light emission points at different heights. That is, in terms of design, if the light emission points are at different heights, the position of the light incident on the optical component 70 can be suppressed from shifting in the second direction by adjusting the mounting position of the reflective component 40. In this case, the degree of component tolerance of the reflective component 40 affects the quality of the light emitted from the light emitting device 1.

[0293] In this way, by adopting the first reflecting component 40A, the second reflecting component 40B and the third reflecting component 40C to realize a plurality of light-emitting devices 1 including a light-emitting device 1 having a semiconductor laser element 20 that emits a first color of light, a light-emitting device 1 having a semiconductor laser element 20 that emits a second color of light, a light-emitting device 1 having a semiconductor laser element 20 that emits a first color of light and a semiconductor laser element 20 that emits a second color of light, the quality of light emitted from the light-emitting device 1 can be improved.

[0294] In addition, for ease of understanding, the case where a plurality of light emitting devices 1 are manufactured, managed, and sold is described as an example, but the number of light emitting devices 1 manufactured, managed, and sold is not necessarily "plural." For example, as two reflective members are obtained from one base material, it can be said that the same is true when a first light emitting device 1A including two first semiconductor laser elements 20A, a second light emitting device 1B including two second semiconductor laser elements 20B, and a third light emitting device 1C including one third semiconductor laser element 20C and one fourth semiconductor laser element 20D are manufactured.

[0295] In addition, the plurality of light-emitting devices 1 including the first light-emitting device 1A, the second light-emitting device 1B, and the third light-emitting device 1C manufactured or managed for sale may not be uniformly transferred to the same demander. Among the plurality of light-emitting devices 1, the first light-emitting device 1A and the second light-emitting device 1B may be transferred to the same demander or different demanders. Among the plurality of light-emitting devices 1, the first light-emitting device 1A and the third light-emitting device 1C may be transferred to the same demander or different demanders. Among the plurality of light-emitting devices 1, the second light-emitting device 1B and the third light-emitting device 1C may be transferred to the same demander or different demanders.

[0296] In addition, in all the light-emitting devices 1, the plurality of reflective components 40 provided in the light-emitting device 1 are not necessarily obtained from one base material. The number of reflective components 40 obtained from one base material is not limited to always being evenly divisible by the number of reflective components 40 provided in the light-emitting device 1. In such a case, whether to discard the remaining reflective components 40 or to mix and use them with reflective components 40 made of other base materials is a matter to be studied and determined from other viewpoints, and thus, the above-mentioned effect of improving the quality of light will not be lost.

[0297] On the other hand, when the light emitting device 1 is manufactured using a plurality of reflective components 40 made of the same base material, the influence of component tolerances between the plurality of reflective components 40 is reduced. For example, the difference in width in the direction perpendicular to the lower surface 41A between the plurality of first reflective components 40A of the first light emitting device 1A can be 15 μm or less. The difference in width in the direction perpendicular to the lower surface 41A between the plurality of second reflective components 40B of the second light emitting device 1B can be 15 μm or less. The difference in width in the direction perpendicular to the lower surface 41A between the plurality of third reflective components 40C of the third light emitting device 1C can be 15 μm or less.

[0298] In addition, as a preferred embodiment, the number of reflective components 40 provided in one light emitting device 1 is preferably less than the number of reflective components 40 obtained from one base material. In the case where one base material is divided to manufacture N (N is a natural number) reflective components 40, less than N reflective components 40 are arranged in one light emitting device 1.

[0299] Here, refer to FIG. 14A to FIG. 14G , a method for manufacturing a plurality of reflective members 40 from one base material will be described. Note that this manufacturing method is only an example.

[0300] The reflective member 40 can be manufactured by a manufacturing method including a first step of preparing a base material 400 , a second step of shaping the base material 400 , a third step of providing the reflective film 402 on the base material 400 , and a fourth step of dividing the base material 400 .

[0301] The base material 400 can be, for example, a silicon substrate. The base material 400 is in a plate-like shape. In the process of forming the base material 400, the base material 400 is formed by a known method such as wet etching. The upper surface side of the base material 400 is partially removed. Fig. 14C As shown, the formed base material 400 has an inclined surface that is inclined relative to the lower surface of the base material 400 .

[0302] In the process of providing the reflective film 402 on the base material 400, the reflective film 402 is provided on the lower surface of the base material 400. When the first reflective member 40A is to be manufactured from the base material 400, the reflective film 402 that becomes the first reflective film 42A is provided in this process. When the second reflective member 40B is to be manufactured from the base material 400, the reflective film 402 that becomes the second reflective film 42B is provided in this process. When the third reflective member 40C is to be manufactured from the base material 400, the reflective film 402 that becomes the third reflective film 42C is provided in this process.

[0303] In addition, a metal film 401 is provided on the upper surface side of the base material 400. The metal film 401 is provided on the inclined surface of the base material 400. The metal film 401 functions as a bonding pattern when bonding the reflective member 40 to the first upper surface 11A of the base.

[0304] In the process of dividing the base material 400, a known method such as cutting is used to divide the base material 400. In this way, one base material 400 is divided to manufacture a plurality of reflective components 40 each having a reflective film 42. The number of reflective components 40 obtained from one base material 400 is more than ten. In addition, the number of reflective components 40 obtained from one base material 400 can be more than 100. In addition, the number of reflective components 40 obtained from one base material 400 can be more than 1000.

[0305] The multiple (more than ten, more than 100, or more than 1000) reflective components 40 obtained from one base material 400 are all of the same shape. The "same shape" here allows a size difference of less than 15 μm. By obtaining multiple reflective components 40 from one base material 400, reflective components 40 that are unified into the same shape with high precision can be manufactured.

[0306] In a method for manufacturing a plurality of light emitting devices 1 including a method for manufacturing a first light emitting device 1A, a method for manufacturing a second light emitting device 1B, and a method for manufacturing a third light emitting device 1C, the method for manufacturing the first light emitting device 1A includes: a step of dividing a first base material to manufacture ten or more first reflection components 40A each having a first reflection film 42A; and a step of arranging ten or less first semiconductor laser elements 20A and ten or less first reflection components 40A in a first package. In addition, the first base material refers to a base material 400 prepared for manufacturing the first reflection component 40A.

[0307] In the method for manufacturing a plurality of light emitting devices 1 including a method for manufacturing a first light emitting device 1A, a method for manufacturing a second light emitting device 1B, and a method for manufacturing a third light emitting device 1C, the method for manufacturing the second light emitting device 1B includes: a step of dividing a second base material to manufacture ten or more second reflection components 40B each having a second reflection film 42B; and a step of arranging ten or less second semiconductor laser elements 20B and ten or less second reflection components 40B in a second package. In addition, the second base material refers to a base material 400 prepared for manufacturing the second reflection component 40B.

[0308] In the method for manufacturing a plurality of light emitting devices 1 including a method for manufacturing a first light emitting device 1A, a method for manufacturing a second light emitting device 1B, and a method for manufacturing a third light emitting device 1C, the method for manufacturing the third light emitting device 1C includes: a step of dividing a third base material to manufacture ten or more third reflective members 40C each having a third reflective film 42C; and a step of arranging one or more third semiconductor laser elements 20C, one or more fourth semiconductor laser elements 20D, and ten or less third reflective members 40C in a third package. In addition, the sum of the number of third semiconductor laser elements 20C and the number of fourth semiconductor laser elements 20D included in the third light emitting device 1C is ten or less. In addition, the third base material refers to a base material 400 prepared for manufacturing the third reflective member 40C.

[0309] In this way, by using multiple reflective components 40 made of the same base material 400 in the light-emitting device 1, the influence of component tolerances between base materials, processing deviations in the manufacturing process of the reflective components 40, etc. can be reduced, and the quality of light emitted from the light-emitting device 1 can be improved.

[0310] The various embodiments of the present invention have been described above, but the multiple light-emitting devices of the present invention are not strictly limited to the light-emitting devices of the embodiments. That is, the present invention is not impossible to implement as long as it is not limited to the appearance and structure of the light-emitting devices disclosed by the embodiments. The present invention does not necessarily have to have all the constituent elements to be applicable. For example, in the case where a part of the constituent elements of the light-emitting device disclosed by the embodiments is not recorded in the claims, for the constituent elements of the part, the freedom of design of those skilled in the art such as replacement, omission, deformation of shape, change of material, etc. is confirmed, and the invention described in the claims is specifically applied on this basis.

[0311] [Industrial Application Possibility]

[0312] The light-emitting device described in the embodiment can be used in a projector. That is, the projector can be said to be one use mode of the present invention. In addition, the present invention is not limited to this, and can be used in various use modes such as lighting, exposure, vehicle headlights, head-mounted displays, and backlights of other displays. In addition, the first light-emitting device, the second light-emitting device, and the third light-emitting device are not limited to being used in the same use mode, and can also be used in different use modes.

Claims

1. A plurality of light-emitting devices, comprising a first light-emitting device, a second light-emitting device and a third light-emitting device, each of which has a package of the same appearance and in which a semiconductor laser element and a reflective component are arranged, wherein: The first light emitting device comprises: a first package as the package; A plurality of first semiconductor laser elements as the semiconductor laser elements are respectively arranged in the first package and emit light of a first color having a first wavelength as a peak wavelength of emission. The plurality of first reflecting members as the reflecting members are respectively arranged in the first package, have a first reflecting surface provided with a first reflecting film having a reflectivity of 90% or more for the first wavelength, and reflect the light of the first color emitted from the first semiconductor laser element. The second light emitting device comprises: a second package as the package; A plurality of second semiconductor laser elements as the semiconductor laser elements are respectively arranged in the second package and emit light of a second color different from the first color and having a peak wavelength of light emission of a second wavelength, The plurality of second reflecting members as the reflecting members are respectively arranged in the second package, have a second reflecting surface provided with a second reflecting film having a reflectivity of 90% or more for the second wavelength, and reflect the light of the second color emitted from the second semiconductor laser element. The third light emitting device comprises: A third package as the package; One or more third semiconductor laser elements as the semiconductor laser elements are arranged in the third package and emit the first color with a light emission peak wavelength of a third wavelength; One or more fourth semiconductor laser elements as the semiconductor laser elements are arranged in the third package and emit the second color having a light emission peak wavelength of a fourth wavelength; a plurality of third reflecting components, each disposed on the package, having a third reflecting surface provided with a third reflecting film having a reflectivity of 90% or more for the third wavelength and the fourth wavelength, including the reflecting component for reflecting the light of the first color emitted from the third semiconductor laser element, and the reflecting component for reflecting the light of the second color emitted from the fourth semiconductor laser element, The first light emitting device does not include the semiconductor laser element that emits the second color light having a peak emission wavelength of the second wavelength and the semiconductor laser element that emits the second color light having a peak emission wavelength of the fourth wavelength. The second light emitting device does not include the semiconductor laser element that emits the first color light having a peak emission wavelength of the first wavelength and the semiconductor laser element that emits the first color light having a peak emission wavelength of the third wavelength. The reflectivity of the third reflective film to the light of the first wavelength is higher than the reflectivity of the second reflective film to the light of the first wavelength. The reflectivity of the third reflective film with respect to the light of the second wavelength is higher than the reflectivity of the first reflective film with respect to the light of the second wavelength.

2. The plurality of light emitting devices according to claim 1, wherein: The reflectivity of the third reflective film to the light of the third wavelength is higher than the reflectivity of the second reflective film to the light of the third wavelength. The reflectivity of the third reflective film with respect to the light of the fourth wavelength is higher than the reflectivity of the first reflective film with respect to the light of the fourth wavelength.

3. A plurality of light emitting devices according to claim 1 or 2, wherein: The plurality of third reflective components respectively have a lower surface, and the third light reflecting surface is inclined relative to the lower surface. A difference in width between the plurality of third reflective members in a direction perpendicular to the lower surface is 15 μm or less.

4. A plurality of light emitting devices according to any one of claims 1 to 3, wherein: The plurality of first reflecting components each have a lower surface, and the first light reflecting surface is inclined relative to the lower surface. The plurality of second reflecting components each have a lower surface, and the second light reflecting surface is inclined relative to the lower surface. The component tolerance between the plurality of first reflective components in a direction perpendicular to the lower surface is less than 15 μm, A component tolerance between the plurality of second reflective members in a direction perpendicular to the lower surface is 15 μm or less.

5. The plurality of light emitting devices according to any one of claims 1 to 4, wherein: The difference between the first wavelength and the second wavelength is greater than 30 nm, The difference between the third wavelength and the fourth wavelength is greater than 30 nm, The difference between the first wavelength and the third wavelength is less than 15 nm, The difference between the second wavelength and the fourth wavelength is less than 15 nm.

6. The plurality of light emitting devices according to any one of claims 1 to 5, wherein: The first wavelength and the third wavelength are the same wavelength, and the second wavelength and the fourth wavelength are the same wavelength.

7. The plurality of light emitting devices according to any one of claims 1 to 6, wherein: The first color is any one of red, green, and blue, and the second color is any one of red, green, and blue.

8. The plurality of light emitting devices according to any one of claims 1 to 7, wherein: The first light emitting device and the second light emitting device are transferred to the same demander or different demanders, The first light emitting device and the third light emitting device are transferred to the same demander or different demanders, The second light-emitting device and the third light-emitting device are transferred to the same demander or different demanders.

9. A method for manufacturing a plurality of light-emitting devices, comprising a method for manufacturing a first light-emitting device, a method for manufacturing a second light-emitting device, and a method for manufacturing a third light-emitting device, wherein: The method for manufacturing the first light emitting device comprises: a step of dividing the first base material to produce ten or more first reflecting members each having a first reflecting film; The step of arranging ten or less first semiconductor laser elements and ten or less first reflecting members in a first package; A method for manufacturing the second light emitting device comprises: a step of dividing the second base material to produce ten or more second reflecting members each having a second reflecting film; The step of arranging ten or less second semiconductor laser elements and ten or less second reflecting members in a second package; The method for manufacturing the third light emitting device comprises: a step of dividing the third base material to produce ten or more third reflecting members each having a third reflecting film; a step of arranging one or more third semiconductor laser elements, one or more fourth semiconductor laser elements, and ten or less third reflecting members in a third package; The first base material, the second base material and the third base material are base materials formed of the same material. The first semiconductor laser element emits light of a first color having a peak wavelength of a first wavelength. The second semiconductor laser element emits light of a second color having a second wavelength as a peak wavelength. The third semiconductor laser element emits the first color light having a peak emission wavelength of a third wavelength. The fourth semiconductor laser element emits the second color light having a peak emission wavelength of a fourth wavelength, The sum of the number of the one or more third semiconductor laser elements and the number of the one or more fourth semiconductor laser elements is ten or less, The reflectivity of the third reflective film to the light of the first wavelength is higher than the reflectivity of the second reflective film to the light of the first wavelength. The reflectivity of the third reflective film with respect to the light of the second wavelength is higher than the reflectivity of the first reflective film with respect to the light of the second wavelength.

10. The manufacturing method according to claim 9, wherein: The first wavelength and the third wavelength are the same wavelength, and the second wavelength and the fourth wavelength are the same wavelength.

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