Semiconductor laser system based on fast coupling

Abstract

The invention discloses a semiconductor laser system based on rapid coupling, and particularly relates to the technical field of semiconductor laser, and the system is characterized in that the connection matching information of a semiconductor laser and an external optical system, the current frequency fluctuation information of a drive circuit, the heat dissipation efficiency information of a heat dissipation system, and the output wavelength information of the semiconductor laser are acquired; a fast coupling efficiency influence evaluation model is constructed, a fast coupling efficiency influence index is generated, whether an existing fast coupling semiconductor laser system has potential operation hidden dangers or not is evaluated, and potential problems existing in the existing fast coupling semiconductor laser system are intelligently perceived. Decision early warning is carried out according to the degree of hidden danger existing in operation of the fast coupling semiconductor laser system, early-stage early warning prompt is provided, unnecessary shutdown is avoided, production interruption caused by equipment faults is reduced, the overall working efficiency is improved, resource configuration is optimized, and the coupling efficiency is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor laser technology, and more particularly to a semiconductor laser system based on fast coupling. Background Art

[0002] Semiconductor laser systems based on fast coupling are an important technical foundation in modern optical communications, lidar, precision measurement and other fields. Semiconductor lasers have become a core component of laser systems due to their miniaturization, high efficiency and adjustability. Through current injection and carrier recombination of semiconductor materials, semiconductor lasers can achieve laser output, with better power efficiency, optical bandwidth and adjustment range than traditional lasers, and are particularly suitable for application scenarios that require high frequency, high power and fast response; Although semiconductor lasers have many advantages, the implementation of fast coupling technology still faces a series of technical challenges. For example, the stability of the connection between the semiconductor laser and the external optical system, the fluctuation of the bandwidth of the electronic driving circuit, the decrease in the heat dissipation efficiency of the heat dissipation system, and the wavelength drift of the semiconductor laser all lead to a decrease in coupling efficiency to varying degrees. Therefore, how to intelligently monitor and perceive the above-mentioned hidden dangers is still an important challenge that needs to be urgently solved in the fast coupling semiconductor laser system. Summary of the invention

[0003] In order to overcome the above-mentioned defects of the prior art, the embodiments of the present invention provide a semiconductor laser system based on fast coupling to solve the problems raised in the above-mentioned background technology.

[0004] To achieve the above object, the present invention provides the following technical solutions: The semiconductor laser system based on fast coupling includes connection stabilization module, circuit fluctuation module, heat dissipation efficiency monitoring module, wavelength drift module, comprehensive evaluation module, and hidden danger warning module; A connection stabilization module is used to obtain connection matching information between the semiconductor laser and the external optical system, and obtain a beam angle connection matching deviation coefficient according to the connection matching information; A circuit fluctuation module is used to obtain the current frequency fluctuation information of the semiconductor laser driving circuit, and obtain the current frequency fluctuation index according to the current frequency fluctuation information; The heat dissipation efficiency monitoring module is used to obtain the heat dissipation efficiency information of the heat dissipation system, and obtain the heat dissipation efficiency decreasing trend index according to the heat dissipation efficiency information; A wavelength drift module is used to obtain output wavelength information of a semiconductor laser and obtain an output wavelength drift coefficient according to the output wavelength information; A comprehensive evaluation module is used to construct a fast coupling efficiency impact evaluation model based on the beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient, generate a fast coupling efficiency impact index, and evaluate whether there are potential operating hazards in the existing fast coupling semiconductor laser system; The hidden danger warning module is used to make decision warnings based on the degree of operation hidden dangers existing in the fast-coupled semiconductor laser system.

[0005] In a preferred embodiment, by acquiring connection matching information between the semiconductor laser and the external optical system, the deviation between the incident angle of the semiconductor laser output beam and the docking angle of the external optical system input end is analyzed, and the beam angle connection matching deviation coefficient is obtained to measure the degree of deviation between the incident angle of the semiconductor laser output beam and the docking angle of the external optical system input end; The logic for obtaining the beam angle connection matching deviation coefficient is as follows: Get the incident angle of the output beam of the semiconductor laser And the optimal receiving angle of the receiving surface of the external optical system , calculate the angle deviation Expressions such as ; Calculate the mode matching degree between the output beam mode of the semiconductor laser and the receiving mode of the external optical system , the expression is as follows ,in represents the output beam mode function of the semiconductor laser, represents the external optical system receiving mode function, represents the angle coordinate, yes The complex conjugate of, radial coordinates from arrive Represents the area from the center of the beam to infinity, the angular coordinate from arrive Represents a complete circle; Calculate beam angle connection matching deviation coefficient , the expression is as follows .

[0006] In a preferred embodiment, by acquiring the current frequency fluctuation information of the semiconductor laser driving circuit, analyzing the fluctuation of the current frequency of the semiconductor laser driving circuit, and acquiring the current frequency fluctuation index, the fluctuation degree of the current frequency of the semiconductor laser driving circuit is measured; The logic for obtaining the current frequency fluctuation index is as follows: Acquire the time domain current signal data of the semiconductor laser driving circuit within a preset fixed time period T ; Select mother wavelet function to calculate different scales and time location The wavelet coefficients on , the expression is as follows ,in is the complex conjugate of the mother wavelet function, with a scale of Used to control the frequency resolution and time position of the wavelet Used to control time shift; Calculate the wavelet energy spectrum , the expression is as follows ; Calculate the mean energy spectrum , the expression is as follows ,in Indicates that at the i-th scale The wavelet energy spectrum of , is a positive integer; calculate the standard deviation of the energy spectrum , the expression is as follows ; Calculate the current frequency fluctuation index , the expression is as follows .

[0007] In a preferred embodiment, the cooling efficiency information of the cooling system is obtained, the cooling efficiency of the cooling system is analyzed, and a cooling efficiency decreasing trend index is obtained to measure the decreasing trend of the cooling efficiency of the cooling system; The logic for obtaining the heat dissipation efficiency decline trend index is as follows: Obtain the laser's operating temperature, ambient temperature, thermal conductivity of the cooling system, effective area of ​​the heat sink, fan speed, and air velocity to calculate the heat flux index. The expression is as follows: ,in represents the heat flow index, represents the operating temperature of the laser, Indicates the ambient temperature, represents the thermal conductivity of the cooling system, represents the effective area of ​​the heat sink, Indicates the fan speed. Indicates air velocity; The heat flux index at different times is calculated within a preset fixed time period T and a heat flux index decay model is constructed. The heat flux index decay model is based on the following expression: ,in represents the heat flow index calculated at time t, represents the initial heat flow index, represents the attenuation factor; Calculate the cooling efficiency decline trend index , the expression is as follows ,in It represents the mean value of heat flow index, and its calculation expression is as follows ,in The value range is from 0 to T.

[0008] In a preferred embodiment, by acquiring the output wavelength information of the semiconductor laser, analyzing the abnormal drift of the output wavelength of the semiconductor laser, and acquiring the output wavelength drift coefficient, the abnormal degree of the drift of the output wavelength of the semiconductor laser is measured; The logic for obtaining the output wavelength drift coefficient is as follows: Obtain the output wavelength value of the semiconductor laser and calculate the output wavelength drift between it and the expected receiving wavelength value of the external optical system , the expression is as follows ,in Represents the output wavelength value of the semiconductor laser, Indicates the expected receiving wavelength value of the external optical system; Calculating the skewness of wavelength shift , expressed as follows ,in represents the output wavelength drift between the n-th output wavelength value of the semiconductor laser and the expected receiving wavelength value of the external optical system within a preset fixed time period T, n={1,2,...,N}, N is a positive integer; It represents the mean value of the output wavelength drift, and its calculation expression is as follows , It represents the standard deviation of the output wavelength drift, and its calculation expression is as follows ; Calculate the kurtosis of wavelength shift , the expression is as follows ; Calculate the output wavelength drift coefficient , the expression is as follows ,in represents a maximum value acquisition function, which is used to obtain the maximum value of the output wavelength drift calculated within a fixed time period T.

[0009] In a preferred embodiment, a fast coupling efficiency impact evaluation model is constructed based on the beam angle connection matching deviation coefficient, the current frequency fluctuation index, the heat dissipation efficiency decline trend index, and the output wavelength drift coefficient to generate a fast coupling efficiency impact index. The model is based on the following formula , where , , , They respectively represent the preset proportional coefficients of the beam angle connection matching deviation coefficient, the current frequency fluctuation index, the heat dissipation efficiency decrease trend index, and the output wavelength drift coefficient, and , , , Both are greater than 0.

[0010] In a preferred embodiment, the fast coupling efficiency impact index is compared with a preset fast coupling efficiency impact index threshold to evaluate whether there is a potential operating hazard in the existing fast coupling semiconductor laser system, as follows: If the fast coupling efficiency impact index is greater than the fast coupling efficiency impact index threshold, a potential signal of operation hazards is generated; If the fast coupling efficiency influence index is less than or equal to the fast coupling efficiency influence index threshold, an operation steady-state signal is generated.

[0011] In a preferred embodiment, the potential hazards of the existing fast-coupled semiconductor laser system are evaluated according to the fast-coupling efficiency impact evaluation model within a fixed time period T, and the fast-coupling efficiency impact index corresponding to the generated operation hazard potential signal is obtained, and added to the abnormal detection data analysis set, and the abnormal detection data analysis set is marked as , represents the influence index of the fast coupling efficiency of generating the latent signal of operation hazards for the jth time, j={1,2,...,M}, M is a positive integer; Calculate the anomaly detection value of the fast coupling efficiency impact index in the anomaly detection data analysis set , expressed as follows ,in It represents the mean value of the fast coupling efficiency impact index in the anomaly detection data analysis set. The calculation expression is as follows ; It represents the standard deviation of the fast coupling efficiency impact index in the anomaly detection data analysis set. The calculation expression is as follows ; The abnormal detection value of the fast coupling efficiency impact index in the abnormal detection data analysis set is compared with the preset abnormal detection value threshold, and a decision-making warning is made on the degree of operational hidden dangers in the fast coupling semiconductor laser system, as follows: If the anomaly detection value of the fast coupling efficiency impact index in the anomaly detection data analysis set is greater than the anomaly detection value threshold, a warning signal is generated; if the anomaly detection value of the fast coupling efficiency impact index in the anomaly detection data analysis set is less than or equal to the anomaly detection value threshold, no warning signal needs to be generated.

[0012] Technical effects and advantages of the present invention: 1. The present invention obtains the connection matching information between the semiconductor laser and the external optical system, the current frequency fluctuation information of the driving circuit, the heat dissipation efficiency information of the heat dissipation system, and the output wavelength information of the semiconductor laser, constructs a fast coupling efficiency impact evaluation model, generates a fast coupling efficiency impact index, evaluates whether the existing fast coupling semiconductor laser system has potential operating risks, intelligently perceives the potential problems of the existing fast coupling semiconductor laser system, and makes decisions and early warnings according to the degree of operating risks of the fast coupling semiconductor laser system, provides early warning prompts, avoids unnecessary downtime, reduces production interruptions caused by equipment failures, improves overall work efficiency, optimizes resource allocation, and improves coupling efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to facilitate understanding by those skilled in the art, the present invention is further described below in conjunction with the accompanying drawings; Figure 1 Flowchart of a system according to an embodiment of the present invention. DETAILED DESCRIPTION

[0014] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0015] Embodiment: The present invention provides as Figure 1 The semiconductor laser system based on fast coupling shown includes a connection stabilization module, a circuit fluctuation module, a heat dissipation efficiency monitoring module, a wavelength drift module, a comprehensive evaluation module, and a hidden danger warning module; A connection stabilization module is used to obtain connection matching information between the semiconductor laser and the external optical system, and obtain a beam angle connection matching deviation coefficient according to the connection matching information; A circuit fluctuation module is used to obtain the current frequency fluctuation information of the semiconductor laser driving circuit, and obtain the current frequency fluctuation index according to the current frequency fluctuation information; The heat dissipation efficiency monitoring module is used to obtain the heat dissipation efficiency information of the heat dissipation system, and obtain the heat dissipation efficiency decreasing trend index according to the heat dissipation efficiency information; A wavelength drift module is used to obtain output wavelength information of a semiconductor laser and obtain an output wavelength drift coefficient according to the output wavelength information; A comprehensive evaluation module is used to construct a fast coupling efficiency impact evaluation model based on the beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient, generate a fast coupling efficiency impact index, and evaluate whether there are potential operating hazards in the existing fast coupling semiconductor laser system; Hidden danger warning module, used to make decision and early warning according to the degree of hidden dangers in the operation of the fast-coupled semiconductor laser system; A connection stabilization module is used to obtain connection matching information between the semiconductor laser and the external optical system, and obtain a beam angle connection matching deviation coefficient according to the connection matching information; The beam angle connection matching deviation coefficient is used to measure the matching degree between the output beam of the semiconductor laser and the connection of the input end of the external optical system, that is, the deviation degree between the incident angle of the output beam of the semiconductor laser and the docking angle of the input end of the external optical system. It reflects the transmission efficiency and stability of the beam from the laser to the optical system. It is a key indicator affecting the coupling efficiency and system stability. It describes the deviation between the incident angle of the output beam and the receiving surface of the external optical system (such as the core of the optical fiber or optical waveguide). Generally, the closer the incident angle of the beam is to the optimal receiving angle of the optical system (that is, the design target angle), the higher the coupling efficiency and the better the optical transmission performance of the system.

[0016] A larger beam angle connection matching deviation coefficient will lead to a decrease in the transmission efficiency of the beam energy in the optical fiber or waveguide, increase optical loss, and may even cause the beam to be unable to be effectively transmitted. A larger beam angle connection matching deviation coefficient may also cause signal distortion, reduce the stability and accuracy of the existing fast-coupled semiconductor laser system, which means that the probability of operating hidden dangers in the existing fast-coupled semiconductor laser system is greater. Conversely, a smaller beam angle connection matching deviation coefficient indicates that the operating state of the existing fast-coupled semiconductor laser system is more stable. By calculating the beam angle connection matching deviation coefficient, the problem of coupling efficiency reduction caused by the failure of the connection matching between the semiconductor laser and the external optical system can be effectively evaluated, the optical system configuration can be optimized, the optical loss caused by poor beam matching can be reduced, and the stability and performance of the entire system can be improved. Therefore, by obtaining the connection matching information between the semiconductor laser and the external optical system, the deviation between the incident angle of the output beam of the semiconductor laser and the docking angle of the input end of the external optical system is analyzed, and the beam angle connection matching deviation coefficient is obtained to measure the deviation degree between the incident angle of the output beam of the semiconductor laser and the docking angle of the input end of the external optical system; The logic for obtaining the beam angle connection matching deviation coefficient is as follows: Get the incident angle of the output beam of the semiconductor laser And the optimal receiving angle of the receiving surface of the external optical system , calculate the angle deviation The expression is as follows ; It should be noted that the actual incident angle of the output beam of a semiconductor laser can be measured by a high-precision optical sensor (e.g., a laser beam analyzer, an interferometer, or a photodiode array); Calculate the mode matching degree between the output beam mode of the semiconductor laser and the receiving mode of the external optical system , the expression is as follows ,in Represents the semiconductor laser output beam mode function, which is used to describe the electric field distribution of the semiconductor laser output beam. represents the receiving mode function of the external optical system, which is used to describe the electric field distribution of the external optical system. represents the radial coordinate, represents the angle coordinate, yes The complex conjugate of, radial coordinates from arrive Represents the area from the center of the beam to infinity, the angular coordinate from arrive Represents a complete circle; The mode matching degree between the output beam mode of the semiconductor laser and the receiving mode of the external optical system reflects the matching degree between the output beam of the semiconductor laser and the external optical system. The higher the mode matching degree, the better the coupling efficiency. Calculate beam angle connection matching deviation coefficient , the expression is as follows ; It should be noted that before calculating the beam angle connection matching deviation coefficient, it is necessary to ensure that the angle deviation, the mode matching degree between the semiconductor laser output beam mode and the external optical system receiving mode are normalized. Common normalization methods include Min-Max normalization, Z-Score normalization, etc. A circuit fluctuation module is used to obtain the current frequency fluctuation information of the semiconductor laser driving circuit, and obtain the current frequency fluctuation index according to the current frequency fluctuation information; The current frequency fluctuation index is used to measure the stability of the current frequency of the semiconductor laser driving circuit. It reflects the impact of the current fluctuation amplitude and frequency fluctuation in the semiconductor laser driving circuit on the laser output performance, which is directly related to the stability of the laser output and the overall reliability of the system. A stable current frequency can ensure the stability of the intensity and wavelength of the laser output light, while a large current frequency fluctuation will lead to unstable light output power, increased noise and even spectrum broadening, thereby reducing the overall performance of the system; A higher current frequency fluctuation index indicates that the current frequency fluctuation of the semiconductor laser driving circuit is large, which may cause power fluctuation, noise increase, and even spectrum instability of the laser output, indicating that the fast-coupled semiconductor laser system may have operational risks; a lower current frequency fluctuation index indicates that the current frequency fluctuation of the semiconductor laser driving circuit is small, the driving current is stable, the light intensity and wavelength of the laser output are stable, and the fast-coupled semiconductor laser system has good performance; Therefore, by acquiring the current frequency fluctuation information of the semiconductor laser driving circuit, analyzing the fluctuation of the current frequency of the semiconductor laser driving circuit, and obtaining the current frequency fluctuation index, the fluctuation degree of the current frequency of the semiconductor laser driving circuit is measured; The logic for obtaining the current frequency fluctuation index is as follows: Acquire the time domain current signal data of the semiconductor laser driving circuit within a preset fixed time period T ; Select mother wavelet function to calculate different scales and time location The wavelet coefficients on , the expression is as follows ,in is the complex conjugate of the mother wavelet function, with a scale of Used to control the frequency resolution and time position of the wavelet Used to control time shift; It should be noted that common mother wavelet functions include Morlet wavelet, Daubechies wavelet, etc., which can be selected by technicians in this field according to actual conditions; In an alternative example, the mother wavelet function The plural form of can be expressed as ,in and Represent the mother wavelet function The real and imaginary parts of represents the imaginary unit, then the complex conjugate of the mother wavelet function is It can be expressed as ; Calculate the wavelet energy spectrum , the expression is as follows ; Calculate the mean energy spectrum , the expression is as follows ,in Indicates that at the i-th scale The wavelet energy spectrum of , is a positive integer; calculate the standard deviation of the energy spectrum , the expression is as follows ; Calculate the current frequency fluctuation index , the expression is as follows ; The heat dissipation efficiency monitoring module is used to obtain the heat dissipation efficiency information of the heat dissipation system, and obtain the heat dissipation efficiency decreasing trend index according to the heat dissipation efficiency information; The heat dissipation efficiency decline trend index is used to measure whether there is an abnormal decline trend in the heat dissipation efficiency of the laser heat dissipation system and reflect the degree of this change. The decline in heat dissipation efficiency directly affects the operating temperature of the laser. If the heat dissipation is poor, the temperature of the laser will rise, which may cause output power fluctuations, stability decline, and even system overheating and failure. By calculating the heat dissipation efficiency decline trend index, the decline trend of heat dissipation efficiency can be detected and quantified in time to ensure the output stability of the laser, improve the coupling efficiency, warn of potential heat dissipation problems in advance, and improve the stability, performance and service life of the laser and heat dissipation system, thereby improving the reliability of the laser system, reducing operating costs, extending equipment life and enhancing product competitiveness; A higher heat dissipation efficiency decrease trend index indicates that the laser heat dissipation system may have potential heat dissipation problems, thereby increasing the probability of hidden dangers in the operation of the fast-coupled semiconductor laser system. On the contrary, a lower heat dissipation efficiency decrease trend index indicates that the heat dissipation efficiency of the laser heat dissipation system is stable and efficient, and thus has little impact on the fast-coupled semiconductor laser system. Therefore, by obtaining the heat dissipation efficiency information of the heat dissipation system, analyzing the heat dissipation efficiency of the heat dissipation system, and obtaining the heat dissipation efficiency decreasing trend index, the decreasing trend of the heat dissipation efficiency of the heat dissipation system is measured; The logic for obtaining the heat dissipation efficiency decline trend index is as follows: Obtain the laser's operating temperature, ambient temperature, thermal conductivity of the cooling system, effective area of ​​the heat sink, fan speed, and air velocity to calculate the heat flux index. The expression is as follows: ,in represents the heat flow index, represents the operating temperature of the laser, Indicates the ambient temperature, represents the thermal conductivity of the cooling system, represents the effective area of ​​the heat sink, Indicates the fan speed. Indicates air velocity; It should be noted that before calculating the heat flux index, it is necessary to ensure that the laser's operating temperature, ambient temperature, thermal conductivity of the cooling system, effective area of ​​the heat sink, fan speed, and air velocity are all normalized; The heat flux index at different times is calculated within a preset fixed time period T and a heat flux index decay model is constructed. The heat flux index decay model is based on the following expression: ,in represents the heat flow index calculated at time t, represents the initial heat flow index, represents the attenuation factor; It should be noted that the initial heat flow index and attenuation factor can be determined by fitting methods such as the least squares method, which will not be described in detail here; Calculate the cooling efficiency decline trend index , the expression is as follows ,in It represents the mean value of heat flow index, and its calculation expression is as follows ,in The value range of is from 0 to T; A wavelength drift module is used to obtain output wavelength information of a semiconductor laser and obtain an output wavelength drift coefficient according to the output wavelength information; The output wavelength drift coefficient is used to measure the degree of abnormal drift of the output wavelength of a semiconductor laser. It is used to quantify the amplitude of the laser wavelength change over time, and help monitor and evaluate the stability and performance of the laser. Under normal circumstances, the output wavelength of a semiconductor laser should remain stable, while wavelength drift may be caused by temperature changes, aging, or other factors inside the laser. By calculating the wavelength drift coefficient, abnormal changes in wavelength can be discovered in time, thereby warning of potential failures. In a fast-coupled semiconductor laser system, the drift of the laser output wavelength may reduce the coupling efficiency between the laser beam and the optical fiber or other optical components, causing light loss and affecting system efficiency and transmission quality. A larger output wavelength drift coefficient indicates that the output wavelength of the semiconductor laser has a serious degree of abnormal drift, which may lead to a decrease in the coupling efficiency of the laser beam in the fast-coupled semiconductor laser system, indicating that the fast-coupled semiconductor laser system has operational risks. On the contrary, it indicates that the output wavelength of the semiconductor laser is relatively stable. Therefore, by obtaining the output wavelength information of the semiconductor laser, analyzing the abnormal drift of the output wavelength of the semiconductor laser, and obtaining the output wavelength drift coefficient, the abnormal degree of the drift of the output wavelength of the semiconductor laser is measured; The logic for obtaining the output wavelength drift coefficient is as follows: Obtain the output wavelength value of the semiconductor laser and calculate the output wavelength drift between it and the expected receiving wavelength value of the external optical system , the expression is as follows ,in Represents the output wavelength value of the semiconductor laser, Indicates the expected receiving wavelength value of the external optical system; Calculating the skewness of wavelength shift , expressed as follows ,in represents the output wavelength drift between the n-th output wavelength value of the semiconductor laser and the expected receiving wavelength value of the external optical system within a preset fixed time period T, n={1,2,...,N}, N is a positive integer; It represents the mean value of the output wavelength drift, and its calculation expression is as follows , It represents the standard deviation of the output wavelength drift, and its calculation expression is as follows ; Calculate the kurtosis of wavelength shift , the expression is as follows ; Calculate the output wavelength drift coefficient , the expression is as follows ,in represents a maximum value acquisition function, which is used to obtain the maximum value of the output wavelength drift calculated within a fixed time period T; A comprehensive evaluation module is used to construct a fast coupling efficiency impact evaluation model based on the beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient, generate a fast coupling efficiency impact index, and evaluate whether there are potential operating hazards in the existing fast coupling semiconductor laser system; According to the beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient, a fast coupling efficiency impact evaluation model is constructed to generate a fast coupling efficiency impact index. The model is based on the following formula , where They respectively represent the preset proportional coefficients of the beam angle connection matching deviation coefficient, the current frequency fluctuation index, the heat dissipation efficiency decrease trend index, and the output wavelength drift coefficient, and All are greater than 0; It should be noted that before constructing the fast coupling efficiency impact evaluation model, it is necessary to ensure that the beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient are all normalized. Set it according to the actual situation. For example, adopt the expert empowerment method, that is, invite experts in related fields to determine the preset proportion coefficients of various indicators through professional opinion surveys and comprehensive evaluations; It can be seen from the above calculation expression that the larger the beam angle connection matching deviation coefficient, the larger the current frequency fluctuation index, the larger the heat dissipation efficiency decrease trend index, and the larger the output wavelength drift coefficient, the larger the fast coupling efficiency influence index, indicating that the probability of the existing fast coupling semiconductor laser system having operation hidden dangers is greater; conversely, the smaller the beam angle connection matching deviation coefficient, the smaller the current frequency fluctuation index, the smaller the heat dissipation efficiency decrease trend index, and the smaller the output wavelength drift coefficient, the smaller the fast coupling efficiency influence index, indicating that the probability of the existing fast coupling semiconductor laser system having operation hidden dangers is smaller; The fast coupling efficiency impact index is compared with the preset fast coupling efficiency impact index threshold to evaluate whether there are potential operating hazards in the existing fast coupling semiconductor laser system, as follows: If the fast coupling efficiency impact index is greater than the fast coupling efficiency impact index threshold, it indicates that the existing fast coupling semiconductor laser system has potential operation hazards, and an operation hazard potential signal is generated; If the fast coupling efficiency influence index is less than or equal to the fast coupling efficiency influence index threshold, it indicates that the existing fast coupling semiconductor laser system has no potential operation hidden dangers, and an operation steady-state signal is generated; Hidden danger warning module, used to make decision and early warning according to the degree of hidden dangers in the operation of the fast-coupled semiconductor laser system; The potential hazards of the existing fast-coupled semiconductor laser system are evaluated according to the fast-coupling efficiency impact assessment model within a fixed time period T, and the fast-coupling efficiency impact index corresponding to the generated operation hazard potential signal is obtained, and added to the anomaly detection data analysis set, and the anomaly detection data analysis set is marked as , represents the influence index of the fast coupling efficiency of generating the latent signal of operation hazards for the jth time, j={1,2,...,M}, M is a positive integer; Calculate the anomaly detection value of the fast coupling efficiency impact index in the anomaly detection data analysis set , expressed as follows ,in It represents the mean value of the fast coupling efficiency impact index in the anomaly detection data analysis set. The calculation expression is as follows ; It represents the standard deviation of the fast coupling efficiency impact index in the anomaly detection data analysis set. The calculation expression is as follows ; The abnormal detection value of the fast coupling efficiency impact index in the abnormal detection data analysis set is compared with the preset abnormal detection value threshold, and a decision-making warning is made on the degree of operational hidden dangers in the fast coupling semiconductor laser system, as follows: If the abnormal detection value of the fast coupling efficiency impact index in the abnormal detection data analysis set is greater than the abnormal detection value threshold, it indicates that there is a potential operating hazard in the fast coupling semiconductor laser system that is continuing to ferment, and an early warning signal is generated to prompt the operator or system administrator to take corresponding measures; if the abnormal detection value of the fast coupling efficiency impact index in the abnormal detection data analysis set is less than or equal to the abnormal detection value threshold, it indicates that the potential operating hazard in the fast coupling semiconductor laser system may be an accidental hazard and has no reference significance. There is no need to generate an early warning signal to avoid frequent early warnings; The present invention acquires connection matching information between a semiconductor laser and an external optical system, current frequency fluctuation information of a driving circuit, heat dissipation efficiency information of a heat dissipation system, and output wavelength information of a semiconductor laser, thereby constructing a fast coupling efficiency impact assessment model, generating a fast coupling efficiency impact index, assessing whether an existing fast coupling semiconductor laser system has potential operational risks, intelligently sensing potential problems existing in the existing fast coupling semiconductor laser system, and making decisions and early warnings based on the degree of operational risks existing in the fast coupling semiconductor laser system, providing early warning prompts, avoiding unnecessary downtime, reducing production interruptions caused by equipment failures, improving overall work efficiency, optimizing resource allocation, and improving coupling efficiency.

[0017] The above formulas are all dimensionless and numerical calculations. The formula is a formula for the most recent real situation obtained by collecting a large amount of data and performing software simulation. The preset parameters in the formula are set by technicians in this field according to actual conditions.

[0018] The above embodiments can be implemented in whole or in part by software, hardware, firmware or any other combination. When implemented by software, the above embodiments can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions or computer programs. When the computer instructions or computer programs are loaded or executed on a computer, the process or function described in the embodiment of the present application is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions can be transmitted from one website site, computer, server or data center to another website site, computer, server or data center by wired or wireless (e.g., infrared, wireless, microwave, etc.). The computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that contains one or more available media sets. The available medium can be a magnetic medium (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a semiconductor medium. The semiconductor medium can be a solid-state hard disk.

[0019] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0020] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application can be essentially or partly embodied in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium and includes several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods described in the various embodiments of the present application. The aforementioned storage media include: various media that can store program codes, such as USB flash drives, mobile hard disks, read-only memories (ROM), random access memories (RAM), magnetic disks or optical disks.

[0021] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. Based on fast-coupled semiconductor laser system, characterized by: Including connection stability module, circuit fluctuation module, heat dissipation efficiency monitoring module, wavelength drift module, comprehensive evaluation module, hidden danger warning module; A connection stabilization module is used to obtain connection matching information between the semiconductor laser and the external optical system, and obtain a beam angle connection matching deviation coefficient according to the connection matching information; A circuit fluctuation module is used to obtain the current frequency fluctuation information of the semiconductor laser driving circuit, and obtain the current frequency fluctuation index according to the current frequency fluctuation information; The heat dissipation efficiency monitoring module is used to obtain the heat dissipation efficiency information of the heat dissipation system, and obtain the heat dissipation efficiency decreasing trend index according to the heat dissipation efficiency information; A wavelength drift module is used to obtain output wavelength information of a semiconductor laser and obtain an output wavelength drift coefficient according to the output wavelength information; A comprehensive evaluation module is used to construct a fast coupling efficiency impact evaluation model based on the beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient, generate a fast coupling efficiency impact index, and evaluate whether there are potential operating hazards in the existing fast coupling semiconductor laser system; The hidden danger warning module is used to make decision warnings based on the degree of operation hidden dangers existing in the fast-coupled semiconductor laser system.

2. The semiconductor laser system based on fast coupling according to claim 1, characterized in that: By acquiring the connection matching information between the semiconductor laser and the external optical system, the deviation between the incident angle of the output beam of the semiconductor laser and the docking angle of the input end of the external optical system is analyzed, and the beam angle connection matching deviation coefficient is obtained to measure the deviation degree between the incident angle of the output beam of the semiconductor laser and the docking angle of the input end of the external optical system; The logic for obtaining the beam angle connection matching deviation coefficient is as follows: Get the incident angle of the output beam of the semiconductor laser And the optimal receiving angle of the receiving surface of the external optical system , calculate the angle deviation The expression is as follows ; Calculate the mode matching degree between the output beam mode of the semiconductor laser and the receiving mode of the external optical system , the expression is as follows ,in represents the output beam mode function of the semiconductor laser, represents the external optical system receiving mode function, represents the angle coordinate, yes The complex conjugate of, radial coordinates from arrive Represents the area from the center of the beam to infinity, the angular coordinate from arrive Represents a complete circle; Calculate beam angle connection matching deviation coefficient , the expression is as follows .

3. The semiconductor laser system based on fast coupling according to claim 1, characterized in that: By acquiring the current frequency fluctuation information of the semiconductor laser driving circuit, analyzing the fluctuation of the current frequency of the semiconductor laser driving circuit, and obtaining the current frequency fluctuation index, the fluctuation degree of the current frequency of the semiconductor laser driving circuit is measured; The logic for obtaining the current frequency fluctuation index is as follows: Acquire the time domain current signal data of the semiconductor laser driving circuit within a preset fixed time period T ; Select mother wavelet function to calculate different scales and time location The wavelet coefficients on , the expression is as follows ,in is the complex conjugate of the mother wavelet function, with a scale of Used to control the frequency resolution and time position of the wavelet Used to control time shift; Calculate the wavelet energy spectrum , the expression is as follows ; Calculate the mean energy spectrum , the expression is as follows ,in Indicates that at the i-th scale The wavelet energy spectrum of , is a positive integer; calculate the standard deviation of the energy spectrum , the expression is as follows ; Calculate the current frequency fluctuation index , the expression is as follows .

4. The semiconductor laser system based on fast coupling according to claim 1, characterized in that: By acquiring the heat dissipation efficiency information of the heat dissipation system, analyzing the heat dissipation efficiency of the heat dissipation system, and acquiring the heat dissipation efficiency decreasing trend index, the decreasing trend of the heat dissipation efficiency of the heat dissipation system is measured; The logic for obtaining the heat dissipation efficiency decline trend index is as follows: Obtain the laser's operating temperature, ambient temperature, thermal conductivity of the cooling system, effective area of ​​the heat sink, fan speed, and air velocity to calculate the heat flux index. The expression is as follows: ,in represents the heat flow index, represents the operating temperature of the laser, Indicates the ambient temperature, represents the thermal conductivity of the cooling system, represents the effective area of ​​the heat sink, Indicates the fan speed. Indicates air velocity; The heat flux index at different times is calculated within a preset fixed time period T and a heat flux index decay model is constructed. The heat flux index decay model is based on the following expression: ,in represents the heat flow index calculated at time t, represents the initial heat flow index, represents the attenuation factor; Calculate the cooling efficiency decline trend index , the expression is as follows ,in It represents the mean value of heat flow index, and its calculation expression is as follows ,in The value range is from 0 to T.

5. The semiconductor laser system based on fast coupling according to claim 1, characterized in that: By acquiring the output wavelength information of the semiconductor laser, analyzing the abnormal drift of the output wavelength of the semiconductor laser, and acquiring the output wavelength drift coefficient, the abnormal degree of the drift of the output wavelength of the semiconductor laser is measured; The logic for obtaining the output wavelength drift coefficient is as follows: Obtain the output wavelength value of the semiconductor laser and calculate the output wavelength drift between it and the expected receiving wavelength value of the external optical system , the expression is as follows ,in Represents the output wavelength value of the semiconductor laser, Indicates the expected receiving wavelength value of the external optical system; Calculating the skewness of wavelength shift , expressed as follows ,in represents the output wavelength drift between the n-th output wavelength value of the semiconductor laser and the expected receiving wavelength value of the external optical system within a preset fixed time period T, n={1,2,...,N}, N is a positive integer; It represents the mean value of the output wavelength drift, and its calculation expression is as follows , It represents the standard deviation of the output wavelength drift, and its calculation expression is as follows ; Calculate the kurtosis of wavelength shift , the expression is as follows ; Calculate the output wavelength drift coefficient , the expression is as follows ,in represents a maximum value acquisition function, which is used to obtain the maximum value of the output wavelength drift calculated within a fixed time period T.

6. The semiconductor laser system based on fast coupling according to claim 1, characterized in that: According to the beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient, a fast coupling efficiency impact evaluation model is constructed to generate a fast coupling efficiency impact index. The model is based on the following formula , where They respectively represent the preset proportional coefficients of the beam angle connection matching deviation coefficient, the current frequency fluctuation index, the heat dissipation efficiency decrease trend index, and the output wavelength drift coefficient, and Both are greater than 0.

7. The semiconductor laser system based on fast coupling according to claim 6, characterized in that: The fast coupling efficiency impact index is compared with the preset fast coupling efficiency impact index threshold to evaluate whether there are potential operating hazards in the existing fast coupling semiconductor laser system, as follows: If the fast coupling efficiency impact index is greater than the fast coupling efficiency impact index threshold, a potential signal of operation hazards is generated; If the fast coupling efficiency influence index is less than or equal to the fast coupling efficiency influence index threshold, an operation steady-state signal is generated.

8. The semiconductor laser system based on fast coupling according to claim 7, characterized in that: The potential hazards of the existing fast-coupled semiconductor laser system are evaluated according to the fast-coupling efficiency impact evaluation model within a fixed time period T, and the fast-coupling efficiency impact index corresponding to the generated operation hazard potential signal is obtained, and added to the anomaly detection data analysis set, and the anomaly detection data analysis set is marked as , represents the influence index of the fast coupling efficiency of generating the jth operation hidden danger latent signal, j={1,2,...,M}, M is a positive integer; Calculate the anomaly detection value of the fast coupling efficiency impact index in the anomaly detection data analysis set , expressed as follows ,in It represents the mean value of the fast coupling efficiency impact index in the anomaly detection data analysis set. The calculation expression is as follows ; It represents the standard deviation of the fast coupling efficiency impact index in the anomaly detection data analysis set. The calculation expression is as follows ; The abnormal detection value of the fast coupling efficiency impact index in the abnormal detection data analysis set is compared with the preset abnormal detection value threshold, and a decision-making warning is made on the degree of operational hidden dangers in the fast coupling semiconductor laser system, as follows: If the anomaly detection value of the fast coupling efficiency impact index in the anomaly detection data analysis set is greater than the anomaly detection value threshold, a warning signal is generated; if the anomaly detection value of the fast coupling efficiency impact index in the anomaly detection data analysis set is less than or equal to the anomaly detection value threshold, no warning signal needs to be generated.

Images