NPC1 three-level main circuit topological structure

Abstract

The invention discloses an NPC1 three-level main circuit topological structure, which comprises a capacitor pool, a laminated busbar, a packaged IGBT module and a radiator, and is characterized in that the capacitor pool is connected with the laminated busbar, the laminated busbar is connected with the packaged IGBT module, and the packaged IGBT module is connected with the radiator; the laminated busbar is composed of a connecting layer, a positive electrode layer, an N electrode layer, a negative electrode layer and an electrical connecting layer which are distributed and connected from top to bottom. The beneficial effects are that the stray inductance of the system is effectively reduced, so that the assembly and replacement of electric devices are more convenient; the heat dissipation area of the module is effectively increased, heat is uniformly distributed through discrete construction of the modules, and the junction temperature of the chip is effectively reduced; meanwhile, the space layout can be vertically distributed, and the occupied volume is small; through reasonable layered layout, the stray inductance of the system is effectively reduced, the through-current capability is enhanced, the temperature rise of the busbar is reduced, and the difficulty of the assembly process is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of industrial and commercial energy storage, and in particular to an NPC1 three-level main circuit topology structure. Background Art

[0002] As the energy storage industry continues to develop, the advantages of energy storage equipment in responding quickly, adjusting voltage and frequency, and reducing harmonics and flicker in the power system are becoming more and more prominent. By adjusting the control mode based on the peak and valley price difference of electricity consumption, the electricity cost of enterprises is reduced, and the share of the industrial and commercial energy storage market segment is also increasing.

[0003] The power conversion unit of the energy storage converter is the core component of the converter. In order to reduce the voltage requirements of the device and modulate the output of the ideal sinusoidal waveform, it gradually shifted from two-level to three-level topology, among which the NPC1 three-level topology is the most widely used, which is more suitable for high voltage and high power circuits. Figure 1 As shown in the figure, the topology consists of 10 power devices, including 4 IGBTs T1, T2, T3, T4 and corresponding anti-parallel diodes D1, D2, D3, D4 and two clamping diodes Da and Db. The PWM wave is used to control the switch states of the 4 IGBTs to form different modes. Each IGBT can withstand at most half of the maximum system bus voltage.

[0004] The existing main power circuit solutions of industrial and commercial energy storage converters are mostly:

[0005] 1. PCB form integrates IGBT module, driver, and support capacitor into one. The disadvantages of this solution are: 1. The PCB board is large in size, and the welding and assembly process requirements are extremely high; 2. Each device is integrated and welded together, and the value of a single device being damaged and scrapped is high; 3. The parasitic parameters of the PCB board are easily affected by the placement of the device, and the PCB is prone to overheating due to excessive current. 4. The power density is high, and the heat dissipation area of ​​the integrated IGBT module is small. The heat cannot be discharged in time, causing the junction temperature of the module chip to be high, affecting the service life and increasing the failure rate.

[0006] 2. Use copper busbars to make electrical connections between power devices. The disadvantages of this solution are: 1. The copper busbar, as an electrical connector, has a large stray inductance, which increases the voltage spike and affects the safety of IGBT use; 2. The electrical components are scattered and have a large distribution volume; 3. Too many copper busbars bring certain safety risks.

[0007] In summary, there is an urgent need for a new NPC1 main power topology with low stray emissions, fast module heat dissipation, compact space layout, and simple process requirements. Summary of the invention

[0008] In order to solve the above problems, especially to address the deficiencies in the prior art, the present invention provides an NPC1 three-level main circuit topology structure that can solve the above problems.

[0009] To achieve the above purpose, the present invention adopts the following technical means:

[0010] An NPC three-level main circuit topology structure includes a capacitor pool, a laminated busbar, a packaged IGBT module, and a radiator, wherein the capacitor pool is connected to the laminated busbar, the laminated busbar is connected to the packaged IGBT module, and the packaged IGBT module is connected to the radiator;

[0011] The laminated busbar consists of a connection layer, a positive electrode layer, an N-pole layer, a negative electrode layer, and an electrical connection layer that are distributed and connected from top to bottom. The capacitor pool and the packaged IGBT module are respectively connected to the electrical connection layer. The power terminals of the positive electrode layer, the N-pole layer, and the negative electrode layer respectively correspond to the power terminals of the electrical connection layer and can be locked and connected by bolts.

[0012] A further solution of the present invention is that three groups of the packaged IGBT modules are used to construct a single-phase NPC1 type main circuit topology.

[0013] A further solution of the present invention is that the packaged IGBT module is a 62MM packaged IGBT module.

[0014] A further solution of the present invention is that the packaged IGBT module is connected to the electrical connection layer by bolts.

[0015] A further solution of the present invention is that a heat dissipation pipe is embedded and connected at the connection between the heat sink and the packaged IGBT module.

[0016] A further solution of the present invention is that three groups of heat dissipation pipes are provided under each module of the packaged IGBT module.

[0017] A further solution of the present invention is that the heat dissipation pipe is a copper pipe.

[0018] Beneficial effects of the present invention:

[0019] 1. The present invention uses laminated busbars to make electrical connections between electrical components, effectively reduces system stray inductance through reasonable laminated layout, and makes assembly and replacement of electrical components more convenient.

[0020] 2. The present invention uses packaged IGBT modules to build an NPC1 type main circuit topology, which effectively increases the heat dissipation area of ​​the module. The heat is evenly distributed through discrete module construction, which effectively reduces the chip junction temperature. At the same time, the spatial layout can be distributed vertically and occupies a small volume.

[0021] 3. The present invention effectively reduces system stray inductance, enhances current carrying capacity, reduces busbar temperature rise, and reduces assembly process difficulty through reasonable layered layout. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is the NPC1 three-level topology circuit diagram of the present invention;

[0023] Figure 2 It is a structural schematic diagram of the present invention;

[0024] Figure 3 It is a schematic diagram of the structure of the laminated busbar of the present invention;

[0025] Figure 4 It is a schematic diagram of the structural decomposition of the laminated busbar of the present invention;

[0026] Figure 5 is a top view of the radiator of the present invention;

[0027] Reference numerals:

[0028] Capacitor pool 101 , laminated busbar 102 , packaged IGBT module 103 , heat sink 104 , heat pipe 105 , connection layer 1020 , positive electrode layer 1021 , N-pole layer 1022 , negative electrode layer 1023 , electrical connection layer 1024 . DETAILED DESCRIPTION

[0029] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0030] Example 1

[0031] like Figure 1-5 As shown, an NPC1 three-level main circuit topology structure includes a capacitor pool 101, a laminated busbar 102, a packaged IGBT module 103, and a heat sink 104. The capacitor pool 101 is connected to the laminated busbar 102, the laminated busbar 102 is connected to the packaged IGBT module 103, and the packaged IGBT module 103 is connected to the heat sink 104;

[0032] The laminated busbar 102 consists of a connection layer 1020, a positive electrode layer 1021, an N-pole layer 1022, a negative electrode layer 1023, and an electrical connection layer 1024 which are distributed and connected from top to bottom. The capacitor pool 101 and the packaged IGBT module 103 are respectively connected to the electrical connection layer 1024. The power terminals of the positive electrode layer 1021, the N-pole layer 1022, and the negative electrode layer 1023 correspond to the power terminals of the electrical connection layer 1024 respectively and can be locked and connected by bolts.

[0033] How it works

[0034] The topology is composed of 10 power devices, including 4 IGBTs T1, T2, T3, T4 and corresponding anti-parallel diodes D1, D2, D3, D4 and two clamping diodes Da and Db. The packaged IGBT module 103 used in the present invention has 2 IGBTs and 2 anti-parallel diodes sealed inside. Two groups of packaged IGBT modules 103 are connected in series, wherein the 4 IGBTs are used as T1, T2, T3, T4 tubes respectively, and the four anti-parallel diodes are used as D1, D2, D3, D4 tubes respectively. The topology also requires two clamping tubes Da and Db. The two anti-parallel diodes in one group of packaged IGBT modules 103 can be used again, and the two anti-parallel diodes in the third group of packaged IGBT modules 103 can be used as Da and Db respectively. Therefore, constructing a single-phase NPC1 topology requires three groups of packaged IGBT modules 103 , which are electrically connected via the laminated busbar 102 , thereby forming a NPC1 three-level topology structure with multiple groups of packaged IGBT modules 103 .

[0035] Example 2

[0036] like Figure 1-5 As shown, an NPC1 three-level main circuit topology structure includes a capacitor pool 101, a laminated busbar 102, a packaged IGBT module 103, and a heat sink 104. The capacitor pool 101 is connected to the laminated busbar 102, the laminated busbar 102 is connected to the packaged IGBT module 103, and the packaged IGBT module 103 is connected to the heat sink 104;

[0037] The laminated busbar 102 consists of a connection layer 1020, a positive electrode layer 1021, an N-pole layer 1022, a negative electrode layer 1023, and an electrical connection layer 1024 which are distributed and connected from top to bottom. The capacitor pool 101 and the packaged IGBT module 103 are respectively connected to the electrical connection layer 1024. The power terminals of the positive electrode layer 1021, the N-pole layer 1022, and the negative electrode layer 1023 correspond to the power terminals of the electrical connection layer 1024 respectively and can be locked and connected by bolts.

[0038] Three groups of packaged IGBT modules 103 are used to build a single-phase NPC1 main circuit topology. This configuration effectively improves the work efficiency of building a single-phase NPC1 main circuit topology and effectively reduces the difficulty of the building work.

[0039] The packaged IGBT module 103 is a 62MM packaged IGBT module. The 62MM packaged IGBT module is compatible with the ANPC topology, has the characteristics of a large heat dissipation area and a good current balancing effect, and is suitable for high-power applications.

[0040] The packaged IGBT module 103 is connected to the electrical connection layer 1024 by bolts. This arrangement can facilitate the positioning and connection of the packaged IGBT module 103 and can effectively improve the connection efficiency of the packaged IGBT module 103.

[0041] Example 3

[0042] like Figure 1-5 As shown, an NPC1 three-level main circuit topology structure includes a capacitor pool 101, a laminated busbar 102, a packaged IGBT module 103, and a heat sink 104. The capacitor pool 101 is connected to the laminated busbar 102, the laminated busbar 102 is connected to the packaged IGBT module 103, and the packaged IGBT module 103 is connected to the heat sink 104;

[0043] The laminated busbar 102 consists of a connection layer 1020, a positive electrode layer 1021, an N-pole layer 1022, a negative electrode layer 1023, and an electrical connection layer 1024 which are distributed and connected from top to bottom. The capacitor pool 101 and the packaged IGBT module 103 are respectively connected to the electrical connection layer 1024. The power terminals of the positive electrode layer 1021, the N-pole layer 1022, and the negative electrode layer 1023 correspond to the power terminals of the electrical connection layer 1024 respectively and can be locked and connected by bolts.

[0044] A heat pipe 105 is embedded and connected at the connection between the heat sink 104 and the packaged IGBT module 103. This arrangement can facilitate the heat sink 104 to absorb the heat of the packaged IGBT module 103, and can effectively improve the working efficiency and working effect of the heat sink 104.

[0045] Three groups of heat dissipation pipes 105 are arranged under each packaged IGBT module 103. This arrangement can accelerate the heat dissipation of the packaged IGBT module 103 and effectively improve the working efficiency and working effect of the packaged IGBT module 103.

[0046] The heat dissipation pipe 105 is a copper pipe, which has good heat dissipation performance, can effectively improve the heat dissipation efficiency of the heat dissipation pipe 105, and can effectively improve the heat dissipation effect of the heat dissipation pipe 105.

[0047] The examples given in the present invention are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here, and the obvious changes or modifications derived therefrom are still within the protection scope of the present invention.

Claims

1. An NPC1 three-level main circuit topology structure, characterized in that: It comprises a capacitor pool (101), a laminated busbar (102), a packaged IGBT module (103), and a heat sink (104), wherein the capacitor pool (101) is connected to the laminated busbar (102), the laminated busbar (102) is connected to the packaged IGBT module (103), and the packaged IGBT module (103) is connected to the heat sink (104); The laminated busbar (102) is composed of a connection layer (1020), a positive electrode layer (1021), an N-pole layer (1022), a negative electrode layer (1023), and an electrical connection layer (1024) which are connected in a distributed manner from top to bottom; the capacitor pool (101) and the packaged IGBT module (103) are respectively connected to the electrical connection layer (1024); the power terminals of the positive electrode layer (1021), the N-pole layer (1022), and the negative electrode layer (1023) respectively correspond to the power terminals of the electrical connection layer (1024) and can be locked and connected by bolts.

2. The NPC1 three-level main circuit topology structure according to claim 1 is characterized in that: Three groups of packaged IGBT modules (103) are used to construct a single-phase NPC1 type main circuit topology.

3. The NPC1 three-level main circuit topology structure according to claim 2 is characterized in that: The packaged IGBT module (103) is a 62MM packaged IGBT module.

4. The NPC1 three-level main circuit topology structure according to claim 3 is characterized in that: The packaged IGBT module (103) is connected to the electrical connection layer (1024) via bolts.

5. The NPC1 three-level main circuit topology structure according to claim 4 is characterized in that: A heat dissipation pipe (105) is embedded and connected at the connection point between the heat sink (104) and the packaged IGBT module (103).

6. The NPC1 three-level main circuit topology structure according to claim 5, characterized in that: Three groups of heat dissipation pipes (105) are arranged under each packaged IGBT module (103).

7. The NPC1 three-level main circuit topology structure according to claim 6, characterized in that: The heat dissipation pipe (105) is a copper pipe.

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