Manufacturing method of vibration device

Abstract

The manufacturing method of the vibration device can improve reliability. The present invention is provided with: a step for preparing a susceptor (10A) that includes: a semiconductor substrate (11) that has a first surface (11a) on which a circuit element (11a1) is formed and a second surface (11b); and a first insulating layer (12) that is disposed on the first surface (11a) of the semiconductor substrate (11) and covers the circuit element (11a1). Forming a second insulating layer (13) by depositing an insulating material on a fifth surface (10Aa) of the first insulating layer (12) on the opposite side from the base (10A); polishing and planarizing at least a portion of a third surface (10a) of the second insulating layer (13) on the opposite side from the susceptor (10A); forming a mounting electrode (16) on the polished third surface (10a) of the second insulating layer (13); and joining the vibration element (40) and the mounting electrode (16).

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a vibration device. Background Art

[0002] Patent Document 1 discloses a method for manufacturing a vibration device in which a vibration element is bonded to a base substrate on which an integrated circuit is formed. A plurality of insulating layers including a wiring layer are formed on the upper surface of the base substrate, and a vibration element electrically connected to the wiring layer is formed on the insulating layer.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2021-057755

[0004] However, in the structure of Patent Document 1, the surfaces of the plurality of insulating layers including the wiring layers have poor flatness, so when the vibration element is mounted on the surface of the insulating layer, there is a problem that the vibration element and the wiring layer cannot be stably bonded. Summary of the invention

[0005] The manufacturing method of a vibration device has the following steps: preparing a base, wherein the base includes: a semiconductor substrate having a first surface and a second surface, a circuit element being formed on the first surface; and a first insulating layer, which is arranged on the first surface of the semiconductor substrate and covers the circuit element; stacking an insulating material on the surface side of the first insulating layer opposite to the semiconductor substrate to form a second insulating layer; grinding at least a portion of the surface of the second insulating layer opposite to the base to make it flat; forming a mounting electrode on the ground surface of the second insulating layer; and bonding the vibration element to the mounting electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 It is a perspective view showing the structure of a vibration device.

[0007] Figure 2 is a plan view showing the structure of a vibration device.

[0008] Figure 3 yes Figure 2 A cross-sectional view of the vibration device along line AA is shown.

[0009] Figure 4A It is a cross-sectional view showing a method of manufacturing a vibration device.

[0010] Figure 4B It is a cross-sectional view showing a method of manufacturing a vibration device.

[0011] Figure 4C It is a cross-sectional view showing a method of manufacturing a vibration device.

[0012] Figure 4DIt is a cross-sectional view showing a method of manufacturing a vibration device.

[0013] Figure 4E It is a cross-sectional view showing a method of manufacturing a vibration device.

[0014] Figure 4F It is a cross-sectional view showing a method of manufacturing a vibration device.

[0015] Figure 4G It is a cross-sectional view showing a method of manufacturing a vibration device.

[0016] Figure 4H It is a cross-sectional view showing a method of manufacturing a vibration device.

[0017] Fig. 4I It is a cross-sectional view showing a method of manufacturing a vibration device.

[0018] Figure 4J It is a cross-sectional view showing a method of manufacturing a vibration device.

[0019] Figure 4K It is a cross-sectional view showing a method of manufacturing a vibration device.

[0020] Figure 5A It is a cross-sectional view showing a method of manufacturing a vibration device according to a modified example.

[0021] Figure 5B It is a cross-sectional view showing a method of manufacturing a vibration device according to a modified example.

[0022] Figure 5C It is a cross-sectional view showing a method of manufacturing a vibration device according to a modified example.

[0023] Figure 5D It is a cross-sectional view showing a method of manufacturing a vibration device according to a modified example.

[0024] Figure 5E It is a cross-sectional view showing a method of manufacturing a vibration device according to a modified example.

[0025] Fig. 5F It is a cross-sectional view showing a method of manufacturing a vibration device according to a modified example.

[0026] Figure 5G It is a cross-sectional view showing a method of manufacturing a vibration device according to a modified example.

[0027] Figure 5H It is a cross-sectional view showing a method of manufacturing a vibration device according to a modified example.

[0028] Fig.5I It is a cross-sectional view showing a method of manufacturing a vibration device according to a modified example.

[0029] Figure 5JIt is a cross-sectional view showing a method of manufacturing a vibration device according to a modified example.

[0030] Figure 5K It is a cross-sectional view showing a method of manufacturing a vibration device according to a modified example.

[0031] Description of symbols

[0032] 10, 10A: base; 10a: third surface; 10Aa: fifth surface; 10b, 10Ab: fourth surface; 11: semiconductor substrate; 11a: first surface; 11a1: circuit element; 11b: second surface; 12: first insulating layer; 12a: opening; 13: second insulating layer; 13a: opening; 14a: pad electrode; 14b: pad electrode; 15: wiring; 15A, 15A1, 15A2: metal pattern; 15a: TiW film; 15b: Au film; 16: mounting electrode; 17: contact electrode; 17a: opening; 18: metal bump; 20: cover; 21: recess; 30: bonding layer; 40: vibration element; 41: element substrate; 42: first excitation electrode; 43: second excitation electrode; 50: through electrode; 50a: through hole; 51: resin layer; 52: insulating layer; 71, 72: external connection terminals; 100, 100A: vibration device. DETAILED DESCRIPTION

[0033] In the following figures, three axes orthogonal to each other are described as the X-axis, the Y-axis, and the Z-axis. In addition, the direction along the X-axis is referred to as the "X direction", the direction along the Y-axis is referred to as the "Y direction", the direction along the Z-axis is referred to as the "Z direction", the direction of the arrow is the + direction, and the direction opposite to the + direction is referred to as the - direction. In addition, the +Z direction is sometimes referred to as the "upper" or "above" or "front side", the -Z direction is referred to as the "lower" or "below" or "back side", and observations from the +Z direction and the -Z direction are referred to as top-down observations or plane observations. In addition, the surface on the + side of the Z direction is referred to as the "upper surface" or "surface", and the surface on the - side of the Z direction, which will be the opposite side, is referred to as the "lower surface" or "back side".

[0034] First, refer to Figure 1 to Figure 3 The structure of the vibration device 100 is described. In addition, in order to facilitate the description of the internal structure, Figure 2 The vibration device 100 shown in the figure is in a state where the cover 20 is removed.

[0035] like Figure 1 and Figure 2 As shown, the vibration device 100 includes: a base 10; a cover 20, which is arranged on the base 10; a bonding layer 30, which bonds the base 10 and the cover 20; and a vibration element 40 (refer to Figure 3 ), which is mounted on a base 10.

[0036] like Figure 2 As shown, the bonding layer 30 is formed in a frame shape in the region surrounding the vibration element 40, in other words, bonding the base 10 and the cover 20. The bonding layer 30 is bonded by surface activated bonding using, for example, gold (Au). In addition, it is not limited to gold (Au), and copper (Cu) or aluminum (Al) may also be used.

[0037] like Figure 3 As shown, the base 10 has a base 10A and a second insulating layer 13. The base 10A has a semiconductor substrate 11 and a first insulating layer 12.

[0038] The semiconductor substrate 11 has a first surface 11a and a second surface 11b which is a surface opposite to the first surface 11a. In addition, the base 10 has a third surface 10a and a fourth surface 10b which is a surface opposite to the third surface 10a. In addition, the base 10A has a fifth surface 10Aa and a fourth surface 10Ab which is a surface opposite to the fifth surface 10Aa.

[0039] The semiconductor substrate 11 is, for example, a silicon substrate. On the first surface 11 a of the semiconductor substrate 11 , circuit elements 11 a 1 including transistors and the like are formed.

[0040] The circuit element 11a1 is a circuit formed by electrically connecting a plurality of active elements such as transistors (not shown) by wiring. The circuit element 11a1 oscillates the vibration element 40. Alternatively, it may be a temperature compensation circuit that corrects the vibration characteristics of the vibration element 40 according to temperature changes.

[0041] A first insulating layer 12 is disposed on the first surface 11a of the semiconductor substrate 11 so as to cover the circuit element 11a1. A plurality of wiring layers (not shown) are provided on the first insulating layer 12. In addition, the base 10 is covered with the first insulating layer 12, and a pad electrode 14a electrically connected to the circuit element 11a1 is provided on the base 10.

[0042] A second insulating layer 13 made of oxide is formed on the susceptor 10A, that is, on the fifth surface 10Aa of the susceptor 10A. The third surface 10a of the second insulating layer 13 on the opposite side to the susceptor 10A is planarized by polishing.

[0043] As the first insulating layer 12 and the second insulating layer 13, for example, SiO2 (silicon oxide) can be cited. However, the material is not limited to SiO2 (silicon oxide), and materials such as SiN (silicon nitride) may also be used.

[0044] A metal pattern 15A is formed on the second insulating layer 13. The metal pattern 15A includes a mounting electrode 16, a contact electrode 17 provided in an opening 17a formed in the first insulating layer 12 and the second insulating layer 13 overlapping the pad electrode 14a in a plan view, and a wiring 15 connecting the mounting electrode 16 and the contact electrode 17.

[0045] The wiring 15 is, for example, a stacked film of a TiW (titanium tungsten) film 15a and an Au (gold) film 15b. Alternatively, a Ti (titanium) film may be used instead of the TiW film 15a.

[0046] The mounting electrode 16 is electrically connected to the circuit element 11 a 1 via the wiring 15 , the contact electrode 17 , and the pad electrode 14 a . The circuit element 11 a 1 is electrically connected to any one of the external connection terminals 71 and 72 disposed on the fourth surface 10 b of the base 10 via the through electrode 50 .

[0047] Specifically, the external connection terminals 71 and 72 include a power supply external terminal, a ground external terminal, and an oscillation output external terminal electrically connected to the circuit element 11a1. With such a configuration, the circuit element 11a1 is driven by a power supply supplied from the outside via the power supply external terminal, so that the vibration element 40 oscillates to generate an oscillation signal, and the oscillation signal is output to the outside via the oscillation output external terminal.

[0048] The vibration element 40 includes: an element substrate 41; a first excitation electrode 42 (see Figure 2 ), which is arranged on one surface of the element substrate 41; and the second excitation electrode 43 (refer to Figure 2 ) which is arranged on the other surface of the element substrate 41.

[0049] As the constituent material of the first excitation electrode 42 and the second excitation electrode 43, for example, metal materials such as gold (Au), silver (Ag), platinum (Pt), palladium (Pd), iridium (Ir), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), Ti (titanium), tungsten (W), and alloys containing these metal materials can be used.

[0050] In this way, when forming the vibration element 40, the mounting electrode 16 is formed after flattening the base 10, in other words, the third surface 10a of the second insulating layer 13, so that the mounting electrode 16 can be stably bonded to the circuit element 11a1, resulting in that the circuit element 11a1 and the vibration element 40 can be electrically connected in a stable state.

[0051] The mounting electrode 16 is provided on the third surface 10a of the base 10. The mounting electrode 16 is electrically connected to the vibration element 40 via the metal bump 18. In addition, the vibration element 40 is fixed to the third surface 10a of the base 10 by bonding with the metal bump 18. In addition, the metal bump 18 may also be a micro bump or a columnar bump.

[0052] The cover 20 is made of, for example, a silicon substrate, and is a box-shaped container having a recess 21 for forming a chamber S as a storage space. The base 10 and the cover 20 are bonded via the bonding layer 30, so that the vibration element 40 is stored in the recess 21 of the cover 20. That is, the vibration element 40 is hermetically sealed in the space surrounded by the base 10 and the cover 20. In addition, the hermetically sealed space is referred to as a chamber S.

[0053] Next, refer to Figure 4A to Figure 4K A method of manufacturing the vibration device 100 will be described.

[0054] First, in Figure 4A In the process shown, the base 10A is prepared. Specifically, first, a circuit element 11a1 including a transistor and the like is formed on the semiconductor substrate 11. Next, a first insulating layer 12 including an insulating layer, a wiring layer, and pad electrodes 14a and 14b is formed on the semiconductor substrate 11. The first insulating layer 12 is formed by, for example, a CVD (Chemical Vapor Deposition) method. Alternatively, a sputtering method can be used for film formation. Thereafter, an opening 12a is formed on the pad electrode 14a using a photolithography technique and an etching technique.

[0055] Next, in Figure 4B In the process shown, the second insulating layer 13 is formed. Specifically, on the surface of the first insulating layer 12 having the opening 12a opposite to the semiconductor substrate 11, in other words, on the fifth surface 10Aa of the base 10A, an oxide as an insulator is deposited and formed into a film by using, for example, a CVD method similar to the first insulating layer 12. Alternatively, a sputtering method may be used for film formation. The surface of the second insulating layer 13, i.e., the third surface 10a, is uneven because a wiring layer or the like is stacked in the lower layer.

[0056] Furthermore, by forming the second insulating layer 13 using, for example, a CVD method, the gas used can easily spread, and the film can be formed strongly and uniformly.

[0057] Then, in Figure 4CIn the process shown, the third surface 10a of the second insulating layer 13 is flattened. Specifically, for example, the third surface 10a of the second insulating layer 13 on the opposite side of the base 10A is flattened using a CMP (Chemical Mechanical Polishing) method. As a result, the third surface 10a of the second insulating layer 13 with uneven surfaces becomes flat. In addition, since the CMP method is used for flattening, the third surface 10a of the second insulating layer 13 can be flattened relatively easily and with high precision.

[0058] Then, in Figure 4D In the process shown, the opening 17a is formed. Specifically, the opening 17a is formed in the region of the second insulating layer 13 that overlaps with the pad electrode 14a in a plan view, for example, using photolithography and etching techniques. Thus, a portion of the pad electrode 14a is exposed.

[0059] Then, in Figure 4E and Figure 4F In the process shown in FIG. 1 , a metal pattern 15A including a mounting electrode 16 is formed. Specifically, first, as shown in FIG. Figure 4E As shown, a resin layer 51 is formed on the second insulating layer 13 at a portion to be the mounting electrode 16. The resin layer 51 is formed by selectively forming the resin layer using, for example, a coating method.

[0060] Next, a TiW film 15a is formed on the second insulating layer 13 including the opening 17a and the resin layer 51 by, for example, sputtering. Then, a first-layer metal pattern 15A1 is formed by photolithography and etching. Thus, a part of the mounting electrode 16, a part of the wiring 15, and a part of the contact electrode 17 are formed.

[0061] Then, if Figure 4F As shown, an Au film 15b is formed on the second insulating layer 13 having the metal pattern 15A1 formed thereon by using a CVD method or the like. Then, a second metal pattern 15A2 is formed by using a photolithography technique and an etching technique. Furthermore, a bonding layer 30 is formed. Thus, the metal pattern 15A is completed.

[0062] Since the mounting electrode 16 is formed via the resin layer 51 in this manner, when stress is applied to the mounting electrode 16 , the stress can be relieved, and when an impact is applied to the vibration device 100 , the impact can be relieved.

[0063] Then, in Figure 4G In the process shown, the metal bump 18 is formed. Specifically, the metal bump 18 is formed on the mounting electrode 16 using plating. The plating easily reflects the unevenness of the base. However, since the second insulating layer 13 as the base is flattened, it is not easy to produce unevenness on the surface of the metal bump 18.

[0064] Then, in Figure 4H In the process shown, the vibration element 40 is bonded to the metal bump 18. Specifically, the first excitation electrode 42 (see FIG. 1 ) is formed on one side of the element substrate 41 made of a piezoelectric body such as quartz. Figure 2 ), a second excitation electrode 43 is formed on the other side of the element substrate 41 (see Figure 2 ). Then, the completed vibration element 40 is bonded to the metal bump 18 .

[0065] In the above Figure 4C In the process shown, the third surface 10a of the second insulating layer 13 is flattened, so that the mounting electrode 16 and the metal bump 18 are formed on the second insulating layer 13, and the bonding area between the mounting electrode 16 and the metal bump 18 is increased, and the mounting electrode 16 and the metal bump 18 can be electrically connected in a stable state. As a result, the bonding area between the metal bump 18 and the vibration element 40 is increased, and the vibration element 40 and the circuit element 11a1 can be electrically connected in a stable state.

[0066] Then, in Fig. 4I In the process shown, the base 10 and the cover 20 are bonded. Specifically, first, a recess 21 is formed on the silicon substrate. Then, a film of TiW / Au, Ti / Au, etc. is stacked on the entire surface of the silicon substrate on the side where the recess 21 is provided, for example, by sputtering. Thus, the cover 20 is completed.

[0067] Next, with the vibration element 40 accommodated in the accommodation space between the base 10 and the cover 20, the bonding layer 30 formed on the polished third surface 10a of the second insulating layer 13 is bonded to the cover 20 by, for example, activation bonding. Thus, the vibration element 40 is hermetically sealed by the base 10 and the cover 20.

[0068] Then, in Figure 4J In the process shown, a through hole 50a is formed in the base 10A. Specifically, first, the semiconductor substrate 11 is thinned. Then, the through hole 50a is formed in the region overlapping with the pad electrode 14b when the base 10A is viewed from above using photolithography and etching techniques. Then, an insulating layer 52 made of silicon oxide is formed on the surface of the base 10A including the through hole 50a. Next, the insulating layer 52 is etched back to expose the surface of the pad electrode 14b.

[0069] Then, in Figure 4KIn the process shown, the vibration device 100 is completed. Specifically, first, a W (tungsten) film, for example, is embedded in the through hole 50a, and the surface of the insulating layer 52 is patterned. Then, an Au film is formed to cover the exposed W film and patterned, thereby completing the external connection terminals 71 and 72. In this way, by forming the Au film on the surface of the exposed external connection terminals 71 and 72, the external connection terminals 71 and 72 can be protected from the influence of the external environment.

[0070] Next, the cover body 20 is thinned, and when formed from a wafer, for example, it is separated into individual pieces using a cutting method such as dicing, thereby completing the vibration device 100 .

[0071] As described above, the manufacturing method of the vibration device 100 of the present embodiment has the following steps: preparing a base 10A, wherein the base 10A includes: a semiconductor substrate 11, which has a first surface 11a and a second surface 11b, and a circuit element 11a1 is formed on the first surface 11a; and a first insulating layer 12, which is arranged on the first surface 11a of the semiconductor substrate 11 and covers the circuit element 11a1; accumulating an insulating material on the fifth surface 10Aa side of the first insulating layer 12 opposite to the semiconductor substrate 11 to form a second insulating layer 13; grinding at least a portion of the third surface 10a of the second insulating layer 13 on the opposite side of the base 10A to make it flat; forming a mounting electrode 16 on the ground third surface 10a of the second insulating layer 13; and bonding the vibration element 40 to the mounting electrode 16.

[0072] According to this method, since the third surface 10a of the second insulating layer 13 is flattened, when the mounting electrode 16 and the vibration element 40 are formed on the second insulating layer 13, the bonding area between the mounting electrode 16 and the vibration element 40 is increased, and electrical bonding can be stably performed. As a result, the vibration element 40 can be electrically connected to the circuit element 11a1 in a stable state.

[0073] In the method for manufacturing the vibration device 100 of the present embodiment, the planarization step is preferably performed by chemical mechanical polishing. According to this method, since chemical mechanical polishing is used for planarization, the third surface 10 a of the second insulating layer 13 can be planarized relatively easily and accurately.

[0074] Furthermore, the manufacturing method of the vibration device 100 of the present embodiment preferably includes the following step: after the step of bonding the vibration element 40, the cover body 20 is bonded to the polished third surface 10a of the second insulating layer 13 in a state where the vibration element 40 is stored in the storage space between the base 10 and the cover body 20. According to this method, the cover body 20 is bonded to the polished third surface 10a of the second insulating layer 13, specifically, to the bonding layer 30 formed on the third surface 10a, so that the base 10 and the cover body 20 can be bonded in a stable state and can be hermetically sealed.

[0075] In the manufacturing method of the vibration device 100 of the present embodiment, in the step of forming the second insulating layer 13, the second insulating layer 13 is preferably formed using a CVD method. According to this method, since the second insulating layer 13 is formed using a CVD method, for example, the gas used spreads easily, and a film can be formed strongly and uniformly.

[0076] Furthermore, in the manufacturing method of the vibration device 100 of the present embodiment, in the step of forming the second insulating layer 13, it is preferred to use a sputtering method to form the second insulating layer 13. According to this method, since the second insulating layer 13 is formed by a sputtering method, for example, it is possible to appropriately select a method according to the manufacturing environment, and thus the second insulating layer 13 can be manufactured in a wide range of environments.

[0077] In addition, in the manufacturing method of the vibration device 100 of the present embodiment, it is preferable to deposit oxide in the step of forming the second insulating layer 13. According to this method, since the second insulating layer 13 is formed by depositing oxide, for example, the wiring layer including the pad electrode 14a or wiring and the mounting electrode 16 connected to the vibration element 40 can be electrically insulated.

[0078] In the manufacturing method of the vibration device 100 of the present embodiment, in the step of bonding the vibration element 40, the vibration element 40 is preferably bonded to the mounting electrode 16 via the metal bump 18. According to this method, the vibration element 40 is bonded via the metal bump 18, so that the vibration element 40 can be prevented from contacting the wiring layer below.

[0079] Furthermore, in the manufacturing method of the vibration device 100 of the present embodiment, the step of forming the mounting electrode 16 preferably forms the mounting electrode 16 on the polished third surface 10a of the second insulating layer 13 via the resin layer 51. According to this method, since the mounting electrode 16 is formed via the resin layer 51, stress in the case where stress is applied to the mounting electrode 16, or impact in the case where impact is applied to the vibration device 100, can be alleviated.

[0080] Modifications of the above-described embodiment will be described below.

[0081] As described above, the method of forming the metal pattern 15A is not limited to Figure 4A to Figure 4K The manufacturing method shown can also be Figure 5A to Figure 5K The manufacturing method shown is formed. The manufacturing method of the vibration device 100A of the modified example is different in that: instead of forming the second insulating layer 13 after forming the opening 12a on the base 10A, the opening 13a is formed after forming the second insulating layer 13 on the base 10A. Only the parts different from the above embodiment will be described below.

[0082] Specifically, in Figure 5A In the process shown in FIG. 1 , the first insulating layer 12 covering the pad electrodes 14 a and 14 b is formed on the semiconductor substrate 11 , thereby completing the base 10A. Figure 5B In the process shown in FIG. 1 , the second insulating layer 13 is formed on the first insulating layer 12 of the base 10A. Figure 5C In the process shown in FIG. 1 , the third surface 10a of the second insulating layer 13 having the irregularities is flattened by the CMP method. Figure 5D In the step shown, the first insulating layer 12 and the second insulating layer 13 are etched in the region overlapping with the pad electrode 14a in plan view to form the opening 13a. Thus, the surface of the pad electrode 14a is exposed.

[0083] Then, similarly to the above embodiment, by forming Figure 5E to Figure 5K , complete reflects the Figure 5D Even in such a configuration, since the mounting electrode 16 is bonded to the flattened second insulating layer 13, the vibration element 40 and the metal bump 18 and the vibration element 40 and the circuit element 11a1 can be electrically connected in a stable state.

[0084] Thus, in the manufacturing method of the vibration device 100A of the modified example, the base 10A includes the pad electrodes 14a and 14b covered by the first insulating layer 12 and electrically connected to the circuit element 11a1, and the step of forming the mounting electrode 16 includes the following steps: forming the opening 13a in the first insulating layer 12 and the second insulating layer 13 overlapping the pad electrode 14a in a plan view to expose a part of the pad electrode 14a; and forming the metal pattern 15A, wherein the metal pattern 15A includes the mounting electrode 16 and the wiring 15 connecting the exposed pad electrode 14a to the mounting electrode 16. According to this method, since the metal pattern 15A electrically connected to the circuit element 11a1 and the mounting electrode 16 are connected, the circuit element 11a1 and the vibration element 40 can be electrically connected in a stable state.

[0085] In addition, it is not limited to flattening the entire third surface 10a of the second insulating layer 13 as described above, and only at least a portion of the third surface 10a of the second insulating layer 13 on the opposite side of the base 10A, specifically the portion forming the mounting electrode 16 and the portion forming the bonding layer 30, can be polished and flattened.

[0086] In addition, as described above, the method of bonding the base 10 and the cover 20 is not limited to bonding on the second insulating layer 13 via the bonding layer 30. For example, etching treatment can also be performed in the bonding area until the surface of the semiconductor substrate 11 of the base 10A is reached, thereby exposing a flat surface for bonding.

[0087] As described above, the bonding layer 30 is not limited to being formed using the Au film 15 b , and for example, after forming the first metal pattern 15A1 , that is, the TiW film 15 a , the metal film may be planarized. Then, the metal pattern 15A may be formed.

[0088] Furthermore, as described above, the resin layer 51 is not limited to being formed under the mounting electrode 16 , and the mounting electrode 16 may be formed without forming the resin layer 51 .

Claims

1. A method for manufacturing a vibration device, comprising the following steps: Prepare the base, where The base includes: a semiconductor substrate having a first surface and a second surface, a circuit element being formed on the first surface; a first insulating layer being disposed on the first surface of the semiconductor substrate and covering the circuit element; depositing an insulating material on the surface of the first insulating layer opposite to the semiconductor substrate to form a second insulating layer; polishing at least a portion of a surface of the second insulating layer on the opposite side to the base to make it flat; forming a mounting electrode on the polished surface of the second insulating layer; and A vibrating element is engaged with the mounting electrode.

2. The method for manufacturing a vibration device according to claim 1, wherein: In the planarization step, chemical mechanical polishing is used for planarization.

3. The method for manufacturing a vibration device according to claim 1, wherein: The manufacturing method of the vibration device includes a step of, after the step of bonding the vibration element, bonding the cover body to the polished surface of the second insulating layer in a state where the vibration element is accommodated in the accommodation space between the base and the cover body.

4. The method for manufacturing a vibration device according to claim 1, wherein: In the step of forming the second insulating layer, the second insulating layer is formed using a CVD method.

5. The method for manufacturing a vibration device according to claim 1, wherein: In the step of forming the second insulating layer, the second insulating layer is formed using a sputtering method.

6. The method for manufacturing a vibration device according to claim 1, wherein: The base in the step of preparing the base includes a pad electrode, the pad electrode is covered by the first insulating layer and is electrically connected to the circuit element, The process of forming the mounting electrode includes the following steps: The first insulating layer and the second insulating layer overlapped with the pad electrode in a plan view to form an opening so as to expose a portion of the pad electrode; and A metal pattern is formed, wherein the metal pattern includes the mounting electrode and a wiring connecting the exposed pad electrode and the mounting electrode.

7. The method for manufacturing a vibration device according to claim 1, wherein: In the step of forming the second insulating layer, oxide is deposited.

8. The method for manufacturing a vibration device according to any one of claims 1 to 7, wherein: In the step of bonding the vibration element, the vibration element is bonded to the mounting electrode via a metal bump.

9. The method for manufacturing a vibration device according to any one of claims 1 to 7, wherein: In the step of forming the mounting electrode, the mounting electrode is formed on the polished surface of the second insulating layer via a resin layer.

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