Manufacturing method of surface acoustic wave resonator and surface acoustic wave resonator

Abstract

The invention provides a manufacturing method of a surface acoustic wave resonator and the surface acoustic wave resonator, and the manufacturing method comprises the steps: providing a substrate; a plurality of interdigital electrode grooves and mass block grooves are formed in the substrate, and each interdigital electrode groove is provided with at least one mass block groove communicated with the interdigital electrode groove; metal materials are arranged in the interdigital electrode groove and the mass block groove to integrally form an interdigital electrode and a mass block. The interdigital electrode grooves and the mass block grooves are formed in the substrate, then the metal materials are arranged in the interdigital electrode grooves and the mass block grooves to integrally form the interdigital electrodes and the mass blocks, the interdigital electrodes and the mass blocks are formed at the same time through one step, the machining process steps are reduced, the production efficiency is improved, and the production cost is reduced. And no separated interface exists between the interdigital electrode and the mass block which are integrally formed, so that the suppression effect of the mass block on second harmonics can be ensured, the stability of the surface acoustic wave resonator is improved, and the product yield is ensured.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a method for manufacturing a surface acoustic wave resonator and a surface acoustic wave resonator. Background Art

[0002] The surface acoustic wave filter is made of input and output electrodes on the surface of the piezoelectric substrate. An alternating voltage is applied to the input end, and the piezoelectric effect is used to convert electrical energy into acoustic energy. It has the advantages of low insertion loss, wide bandwidth, and low cost, and is widely used in communication RF front-end modules. In order to reduce stray effects, suppress second harmonics, and improve the performance of the filter passband, it is usually practiced to thicken the areas at both ends of the interdigitated electrodes (piston structure) to reduce the propagation speed in the end area.

[0003] However, the current processing technology for adding a mass block is usually to attach the mass block to the interdigital electrode through a lift-off process after the interdigital electrode is manufactured. This processing technology is complicated and is not conducive to improving production efficiency. Summary of the invention The problem to be solved by the present application is that the existing processing technology is complicated and not conducive to improving production efficiency.

[0004] In order to solve the above problems, the present application provides a method for manufacturing a surface acoustic wave resonator, the manufacturing method comprising: providing a substrate; A plurality of interdigital electrode grooves and mass block grooves are formed on the substrate, each of the interdigital electrode grooves being provided with at least one mass block groove communicating with the interdigital electrode groove; Metal materials are arranged in the interdigital electrode grooves and the mass block grooves to form interdigital electrodes and mass blocks in an integrated manner.

[0005] Optionally, forming a plurality of interdigitated electrode grooves and mass block grooves on the substrate includes: forming a dielectric layer on one side of the substrate; Etching the dielectric layer to obtain a plurality of interdigital electrode grooves, each of the interdigital electrode grooves comprising a transduction region and an attenuation region, the transduction region being a region where a plurality of the interdigital electrode grooves alternate with each other, and the transduction region comprising a middle region and edge regions arranged at both ends of the middle region; The dielectric layer located in the edge region is etched along the width direction of the interdigitated electrode grooves to form at least one mass block groove on a side of each interdigitated electrode groove away from the substrate.

[0006] Technical effect: By setting at least one mass block groove in the edge area of ​​the forked electrode groove, at least one mass block is set on one side of the forked electrode, thereby reducing the sound waves propagating parallel to the direction of the forked electrode, suppressing the lateral mode, and thus improving the performance of the surface acoustic wave resonator.

[0007] Optionally, etching the dielectric layer to obtain the plurality of interdigitated electrode grooves comprises: forming a patterned photoresist on a side of the dielectric layer away from the substrate; The dielectric layer not covered by the patterned photoresist is etched by dry etching to form a plurality of interdigitated electrode grooves, and the bottom of each interdigitated electrode groove extends to the substrate.

[0008] Technical effect: A plurality of interdigital electrode grooves exposing the substrate are obtained on the dielectric layer by dry etching, and the process is simple and easy to operate. In addition, by setting the bottom of the interdigital electrode groove to extend to the substrate, the contact between the interdigital electrodes formed in the interdigital electrode groove and the substrate can be ensured.

[0009] Optionally, etching the dielectric layer located in the edge region along the width direction of the interdigitated electrode grooves to form at least one mass block groove on a side of each interdigitated electrode groove away from the substrate comprises: Coating an anti-reflection layer in the interdigital electrode grooves and on the dielectric layer; Coating a photoresist on the anti-reflection layer, and exposing a portion of the anti-reflection layer disposed in the edge region by a photolithography process; The exposed anti-reflection layer is etched and a portion of the dielectric layer is etched by a dry etching process to form at least one of the mass block grooves.

[0010] Technical effect: By coating an anti-reflective layer, the reflection of light during the photolithography process can be effectively reduced and the dielectric layer can be protected. At the same time, the present application can also flexibly control the shape, size and position of the mass block by adjusting the parameters of the photoresist, anti-reflective layer and etching process to meet the needs of different applications and improve compatibility and flexibility.

[0011] Optionally, before providing metal materials in the interdigital electrode grooves and the mass block grooves to form the interdigital electrodes and the mass block as an integrated whole, the manufacturing method further comprises: A metal diffusion barrier layer is formed on the surfaces of the interdigitated electrode grooves and the mass block grooves by a physical vapor deposition process.

[0012] Technical effect: By setting a metal diffusion barrier layer, copper can be effectively prevented from diffusing into the dielectric layer and the device, protecting the basic structure and performance of the device. In addition, the PVD process is an efficient surface treatment technology that can quickly form a uniform and dense metal film at low temperature, which helps to simplify the manufacturing process of the interdigital electrode and the mass block.

[0013] Optionally, the step of providing metal materials in the interdigital electrode grooves and the mass block grooves to integrally form the interdigital electrodes and the mass block comprises: Filling the metal material in the interdigital electrode grooves and the mass block grooves by a chemical electroplating process; The metal material outside the interdigital electrode grooves and the mass block grooves is removed by a planarization process to form the interdigital electrodes and the mass block.

[0014] Technical effect: The present application uses a chemical electroplating process to fill metal materials to form an integrated interdigitated electrode and a mass block, so that the connection between the interdigitated electrode and the mass block is tighter, more uniform and free of voids, and the signal loss caused by loose connection or excessive gap is reduced. In addition, the integrated formation of the interdigitated electrode and the mass block reduces the traditional step-by-step processing process, such as separately processing the interdigitated electrode and the mass block and then assembling them, which helps to simplify the manufacturing process and improve production efficiency.

[0015] Optionally, the metal material includes any one or more of copper, aluminum, silver, platinum, and chromium.

[0016] Optionally, in the width direction of the interdigitated electrode groove, the size of the interdigitated electrode groove is smaller than the size of the mass block groove.

[0017] Technical effect: It can ensure that the formed mass block can fully cover the interdigital electrodes, which can better suppress the lateral mode and thus improve the performance of the surface acoustic wave resonator.

[0018] Optionally, the symmetry line of the interdigitated electrode groove coincides with the symmetry line of the mass block groove.

[0019] Technical effect: The acoustic waves propagating parallel to the electrode direction can be evenly and balancedly reduced, the stray effect can be weakened, the stability of the acoustic waves can be improved, and the lateral mode can be further suppressed, thereby improving the performance of the surface acoustic wave resonator.

[0020] The present application also provides a surface acoustic wave resonator, which is manufactured by any of the above-mentioned methods for manufacturing a surface acoustic wave resonator, and the surface acoustic wave resonator includes: substrate; A dielectric layer is provided on one side of the substrate, a plurality of interdigital electrodes and a plurality of mass blocks are provided in the dielectric layer, at least one mass block is provided on each of the interdigital electrodes, and the interdigital electrodes and the mass blocks are formed in one piece.

[0021] Optionally, the surface acoustic wave resonator further includes a metal diffusion barrier layer, and the metal diffusion barrier layer is arranged between each of the interdigital electrodes and the dielectric layer.

[0022] The manufacturing method of the surface acoustic wave resonator provided in the embodiment of the present application first forms a plurality of interdigitated electrode grooves and mass block grooves on a substrate, and then sets metal materials in the interdigitated electrode grooves and the mass block grooves to form an integrated interdigitated electrode and a mass block. The interdigitated electrode and the mass block are simultaneously formed in one step, which reduces the processing steps and improves the production efficiency. In addition, there is no separated interface between the integrated interdigitated electrode and the mass block, which can ensure the mass block's suppression effect on the second harmonic, improve the stability of the surface acoustic wave resonator, and ensure the product yield. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 A schematic flow chart of a method for manufacturing a surface acoustic wave resonator provided in an embodiment of the present application; Figure 2 A schematic diagram of the process flow of the manufacturing method provided in the embodiment of the present application; Figure 3 for Figure 1 A schematic diagram of the process of making interdigitated electrode grooves and mass block grooves in the manufacturing method shown; Figure 4 for Figure 1 A schematic diagram of a process for integrating interdigitated electrodes and a mass block in a manufacturing method shown; Figure 5 for Figure 4 A schematic structural diagram of the interdigitated electrodes and the mass block formed in the manufacturing method shown.

[0023] Description of reference numerals: 100. Surface acoustic wave resonator; 10. Substrate; 20. Dielectric layer; 30. Photoresist; 40. Anti-reflection layer; 50. Interdigitated electrode grooves; 60. Mass block grooves; 70. Metal diffusion barrier layer; 80. Interdigitated electrodes; 90. Mass block; 101. Metal material. DETAILED DESCRIPTION

[0024] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application will be described in detail below.

[0025] See also Figure 1 and Figure 2 , Figure 1A schematic diagram of a process for manufacturing a surface acoustic wave resonator provided in an embodiment of the present application, Figure 2 The process flow diagram of the manufacturing method provided in the embodiment of the present application is as follows; the embodiment of the present application provides a manufacturing method of a surface acoustic wave resonator 100, and the manufacturing method comprises the following steps: 110. Provide a substrate.

[0026] The material of the substrate 10 may be lithium niobate or lithium tantalate.

[0027] 120. A plurality of interdigital electrode grooves and mass block grooves are formed on a substrate, and each interdigital electrode groove is provided with at least one mass block groove connected to the interdigital electrode groove.

[0028] By setting at least one mass block groove 60 on one side of the interdigital electrode groove 50, at least one mass block 90 is set on one side of the interdigital electrode 80, thereby reducing the sound waves propagating in the direction parallel to the interdigital electrode 80, suppressing the lateral mode, and thus improving the performance of the surface acoustic wave resonator 100.

[0029] The specific steps of forming the interdigital electrode grooves 50 and the mass block grooves 60 can be further referred to. Figure 2 , Figure 2 for Figure 1 The schematic diagram of the process of making the interdigitated electrode grooves and the mass block grooves in the manufacturing method shown is as follows: 111. Form a dielectric layer on one side of the substrate.

[0030] The dielectric layer 20 is formed on one side of the substrate 10 by a physical vapor deposition process, and a planarization process is performed on the dielectric layer 20. In some embodiments, the material of the dielectric layer 20 includes oxide.

[0031] 112. Etch the dielectric layer to obtain a plurality of interdigitated electrode grooves, each of which includes a transduction region and an attenuation region. The transduction region is a region where the plurality of interdigitated electrode grooves alternate with each other, and the transduction region includes a middle region and edge regions arranged at both ends of the middle region.

[0032] Etching the dielectric layer 20 to obtain a plurality of interdigitated electrode grooves includes: forming a patterned photoresist 30 on the side of the dielectric layer 20 away from the substrate 10; etching the dielectric layer 20 not covered by the patterned photoresist 30 by dry etching to form a plurality of interdigitated electrode grooves 50, and the bottom of each interdigitated electrode groove 50 extends to the substrate 10. The patterned photoresist 30 is formed by coating the photoresist 30, exposing, and developing, and a plurality of interdigitated electrode grooves 50 exposing the substrate 10 are obtained on the dielectric layer 20 by dry etching, and the process is simple and easy to operate. In addition, by setting the bottom of the interdigitated electrode groove 50 to extend to the substrate 10, the contact between the interdigitated electrode 80 formed in the interdigitated electrode groove 50 and the substrate 10 can be ensured.

[0033] Among them, each forked electrode groove 50 includes a transduction area and an attenuation area, the transduction area is the area where two forked electrode grooves 50 alternate with each other, the attenuation area is the area located on both sides of the transduction area in the arrangement direction of the multiple forked electrode grooves 50, the transduction area includes a middle area and edge areas arranged on both sides of the middle area, wherein one edge area is connected to the attenuation area, and the other edge area is a free end.

[0034] 113. Etch the dielectric layer located in the edge region along the width direction of the interdigitated electrode grooves to form at least one mass block groove on a side of each interdigitated electrode groove away from the substrate.

[0035] An anti-reflection layer 40 is coated in the interdigitated electrode groove 50 and on the dielectric layer 20; a photoresist 30 is coated on the anti-reflection layer 40, and a portion of the anti-reflection layer 40 disposed in the edge region is exposed by a photolithography process; the exposed anti-reflection layer 40 is etched by a dry etching process, and a portion of the dielectric layer 20 is etched to form at least one mass block groove 60. By coating the anti-reflection layer 40, the reflection of light during the photolithography process can be effectively reduced, and the dielectric layer 20 can be protected. At the same time, the present application can also flexibly control the shape, size and position of the mass block 90 by adjusting the parameters of the photoresist 30, the anti-reflection layer 40 and the etching process, so as to meet the requirements of different applications and improve compatibility and flexibility.

[0036] It is understandable that the specific number, position, shape and size of the exposed part of the anti-reflection layer 40 need to correspond to the actual situation of the mass block groove 60, and the specific number, position, shape and size of the mass block groove 60 need to be set according to the actual situation of the surface acoustic wave resonator 100. Exemplarily, in some embodiments, a mass block 90 is set on any area of ​​the interdigital electrode 80, and the anti-reflection layer 40 set in the corresponding area needs to be exposed to set a mass block groove 60 on the area corresponding to the interdigital electrode groove 50. For another example, in some embodiments, two mass blocks 90 are set on the interdigital electrode 80, and the two mass blocks 90 are respectively set in the edge area, and the anti-reflection layer 40 set in the corresponding edge area needs to be exposed to set two mass block grooves 60 on the area corresponding to the interdigital electrode groove 50; for another example, in some other embodiments, a plurality of mass blocks 90 are set on the interdigital electrode 80, and the plurality of mass blocks 90 are set at any position of the edge area, and the anti-reflection layer 40 set in the plurality of corresponding areas needs to be exposed to set a plurality of mass block grooves 60 on the area corresponding to the interdigital electrode groove 50. The embodiment of the present application is described by taking the example of two mass blocks 90 being provided on the interdigital electrode 80, which should not be construed as a limitation to the present solution.

[0037] The width direction of the interdigital electrode groove 50 may be understood as a direction perpendicular to the extending direction of the interdigital electrode groove 50 .

[0038] In some embodiments, in the width direction of the interdigitated electrode groove 50, the size of the interdigitated electrode groove 50 is smaller than the size of the mass block groove 60, thereby ensuring that the formed mass block 90 can completely cover the interdigitated electrode 80, which can better suppress the lateral mode, thereby improving the performance of the surface acoustic wave resonator 100.

[0039] In some embodiments, the symmetry line of the forked electrode groove 50 coincides with the symmetry line of the mass block groove 60, so that the symmetry line of the forked electrode 80 coincides with the symmetry line of the mass block 90, thereby improving the structural symmetry of the entire surface acoustic wave filter. This symmetry helps to ensure the stability and reliability of the device during operation, reduce performance fluctuations caused by structural asymmetry, and evenly and balancedly reduce sound waves propagating parallel to the electrode direction, weaken stray effects, and further suppress lateral modes, thereby improving the performance of the surface acoustic wave resonator 100.

[0040] In some embodiments, the mass block grooves 60 are symmetrically arranged at both ends of the transduction region, so that the mass blocks 90 are symmetrically arranged at both ends of the transduction region of the interdigital electrodes 80, thereby simultaneously reducing the propagation speed at both ends of the interdigital electrodes 80, quickly suppressing the lateral mode, and improving the performance of the surface acoustic wave resonator 100.

[0041] 130. Metal materials are arranged in the interdigital electrode grooves and the mass block grooves to form an integrated interdigital electrode and a mass block.

[0042] The steps of integrating the interdigital electrodes 80 and the mass block 90 can be further referred to in Figure 4 , Figure 4 for Figure 1 The schematic diagram of the process of integrating the interdigital electrodes and the mass block in the manufacturing method shown is as follows: 131. Metal materials are filled in the interdigital electrode grooves and the mass block grooves through chemical electroplating process.

[0043] The metal material 101 includes any one or more of copper, aluminum, silver, platinum, and chromium.

[0044] Among them, it should be noted that the metal material filled in the interdigitated electrode grooves and the metal material filled in the mass block grooves can be completely the same, partially the same, or completely different. Exemplarily, in some embodiments, the metal material filled in the interdigitated electrode grooves and the metal material filled in the mass block grooves are the same one of copper, aluminum, silver, platinum, and chromium; in some other embodiments, the metal material filled in the interdigitated electrode grooves is a variety of copper, aluminum, silver, platinum, and chromium, and the metal material filled in the mass block groove is one of copper, aluminum, silver, platinum, and chromium; in some other embodiments, the metal material filled in the interdigitated electrode grooves is a variety of copper, aluminum, silver, platinum, and chromium, and the metal material filled in the mass block groove is a variety of copper, aluminum, silver, platinum, and chromium; in some other embodiments, the metal material filled in the mass block groove is a variety of copper, aluminum, silver, platinum, and chromium, and the metal material filled in the interdigitated electrode grooves is one of copper, aluminum, silver, platinum, and chromium.

[0045] In the embodiment of the present application, the metal material 101 of the interdigitated electrode groove is copper as an example for description, but it should not be understood as a limitation on the metal material 101 .

[0046] Compared with the interdigitated electrodes 80 and the mass block 90 obtained by the traditional PVD process, the present application uses a chemical electroplating process to fill the metal material 101 to form the interdigitated electrodes 80 and the mass block 90 as an integrated whole, so that the connection between the interdigitated electrodes 80 and the mass block 90 is tighter, more uniform and free of voids, and the signal loss caused by loose connection or excessive gap is reduced.

[0047] 132. The metal material outside the interdigital electrode grooves and the mass block grooves is removed through a planarization process to form interdigital electrodes and mass blocks.

[0048] By mechanical grinding, the metal material 101 outside the interdigital electrode grooves 50 and the mass block 90 is removed until the dielectric layer 20, and then the interdigital electrodes 80 and the mass block 90 can be integrated into one. This reduces the traditional step-by-step processing process, such as separately processing the interdigital electrodes 80 and the mass block 90 and then assembling them, which helps to simplify the manufacturing process and improve production efficiency.

[0049] The cross-sectional view of the formed interdigital electrode 80 and the mass block 90 along the extension direction of the interdigital electrode 80 can be seen in FIG. Figure 5 , Figure 5 for Figure 4 Schematic diagram of the structure of the interdigitated electrodes and the mass block formed in the manufacturing method shown in FIG. Figure 5 As shown, the mass blocks 90 are disposed at both ends of the interdigital electrodes 80 , and the highest surface of the mass blocks 90 is flush with the highest surface of the interdigital electrodes 80 .

[0050] In some embodiments, before the metal material 101 is set in the interdigital electrode groove 50 and the mass block groove 60 to form the interdigital electrode 80 and the mass block 90, the manufacturing method also includes: forming a metal diffusion barrier layer 70 on the surface of the interdigital electrode groove 50 and the mass block groove 60 by a physical vapor deposition process. In the copper wiring process, copper is very easy to diffuse in the silicon dioxide dielectric layer 20, which is incompatible with silicon and may poison the device. By setting the metal diffusion barrier layer 70, copper can be effectively prevented from diffusing into the dielectric layer 20 and the device, thereby protecting the basic structure and performance of the device. In addition, the PVD process is an efficient surface treatment technology that can quickly form a uniform and dense metal film at low temperature, which helps to simplify the manufacturing process of the interdigital electrode 80 and the mass block 90.

[0051] The metal diffusion barrier layer 70 may be made of tantalum material.

[0052] The embodiment of the present application also provides a surface acoustic wave resonator 100, which is manufactured by the manufacturing method of the surface acoustic wave resonator 100 described in any one of the above embodiments, wherein the surface acoustic wave resonator 100 includes a substrate 10 and a dielectric layer 20, the dielectric layer 20 is arranged on one side of the substrate 10, and a plurality of interdigitated electrodes 80 and a plurality of mass blocks 90 are arranged in the dielectric layer 20, each interdigitated electrode 80 is provided with at least one mass block 90, and the interdigitated electrodes 80 and the mass blocks 90 are formed in an integrated manner.

[0053] In some embodiments, two mass blocks 90 are disposed on each interdigital electrode 80 , and the two mass blocks 90 are respectively disposed at edge regions of the interdigital electrode 80 .

[0054] In some embodiments, the SAW resonator 100 further includes a metal diffusion barrier layer 70 disposed between each interdigital electrode 80 and the dielectric layer 20 .

[0055] Although the present application is disclosed as above, the present application is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the protection scope of the present application shall be subject to the scope defined by the claims.

Claims

1. A method for manufacturing a surface acoustic wave resonator, characterized in that: The manufacturing method comprises: providing a substrate; A plurality of interdigital electrode grooves and mass block grooves are formed on the substrate, each of the interdigital electrode grooves being provided with at least one mass block groove communicating with the interdigital electrode groove; Metal materials are arranged in the interdigital electrode grooves and the mass block grooves to form interdigital electrodes and mass blocks in an integrated manner.

2. The manufacturing method according to claim 1, characterized in that: The forming of a plurality of interdigitated electrode grooves and mass block grooves on the substrate comprises: forming a dielectric layer on one side of the substrate; Etching the dielectric layer to obtain a plurality of interdigital electrode grooves, each of the interdigital electrode grooves comprising a transduction region and an attenuation region, the transduction region being a region where a plurality of the interdigital electrode grooves alternate with each other, and the transduction region comprising a middle region and edge regions arranged at both ends of the middle region; The dielectric layer located in the edge region is etched along the width direction of the interdigitated electrode grooves to form at least one mass block groove on a side of each interdigitated electrode groove away from the substrate.

3. The manufacturing method according to claim 2, characterized in that: The etching of the dielectric layer to obtain the plurality of interdigitated electrode grooves comprises: forming a patterned photoresist on a side of the dielectric layer away from the substrate; The dielectric layer not covered by the patterned photoresist is etched by dry etching to form a plurality of interdigitated electrode grooves, and the bottom of each interdigitated electrode groove extends to the substrate.

4. The manufacturing method according to claim 2, characterized in that: The etching of the dielectric layer located in the edge region along the width direction of the interdigitated electrode grooves to form at least one mass block groove on a side of each interdigitated electrode groove away from the substrate comprises: Coating an anti-reflection layer in the interdigital electrode grooves and on the dielectric layer; Coating a photoresist on the anti-reflection layer, and exposing a portion of the anti-reflection layer disposed in the edge region by a photolithography process; The exposed anti-reflection layer is etched and a portion of the dielectric layer is etched by a dry etching process to form at least one of the mass block grooves.

5. The manufacturing method according to any one of claims 1 to 4, characterized in that: Before arranging metal materials in the interdigital electrode grooves and the mass block grooves to form the interdigital electrodes and the mass block as an integrated whole, the manufacturing method further comprises: A metal diffusion barrier layer is formed on the surfaces of the interdigitated electrode grooves and the mass block grooves by a physical vapor deposition process.

6. The manufacturing method according to any one of claims 1 to 4, characterized in that: The step of providing metal materials in the interdigital electrode grooves and the mass block grooves to form an integrated interdigital electrode and a mass block comprises: Filling the metal material in the interdigital electrode grooves and the mass block grooves by a chemical electroplating process; The metal material outside the interdigital electrode grooves and the mass block grooves is removed by a planarization process to form the interdigital electrodes and the mass block.

7. The manufacturing method according to claim 6, characterized in that: The metal material includes any one or more of copper, aluminum, silver, platinum, and chromium.

8. The manufacturing method according to any one of claims 1 to 4, characterized in that: In the width direction of the interdigital electrode groove, the size of the interdigital electrode groove is smaller than the size of the mass block groove.

9. The manufacturing method according to claim 8, characterized in that: The symmetry line of the interdigitated electrode slot coincides with the symmetry line of the mass block slot.

10. A surface acoustic wave resonator, characterized in that: The surface acoustic wave resonator is manufactured by the method for manufacturing a surface acoustic wave resonator according to any one of claims 1 to 9, and the surface acoustic wave resonator comprises: substrate; A dielectric layer is provided on one side of the substrate, a plurality of interdigital electrodes and a plurality of mass blocks are provided in the dielectric layer, at least one mass block is provided on each of the interdigital electrodes, and the interdigital electrodes and the mass blocks are formed in one piece.

11. The surface acoustic wave resonator according to claim 10, characterized in that: The surface acoustic wave resonator further includes a metal diffusion barrier layer disposed between each of the interdigital electrodes and the dielectric layer.

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