A circuit board, a method and a single machine module for performing irradiation annealing in orbit

Abstract

The application discloses a circuit board, a method and a single machine module for irradiation annealing in orbit. The circuit board comprises an annealing circuit, and further comprises a first wiring layer, at least one intermediate wiring layer arranged on one side of the first wiring layer, and a second wiring layer arranged on a side of the at least one intermediate wiring layer away from the first wiring layer. A device to be annealed is connected to the second wiring layer. The heating coil is arranged on the at least one intermediate wiring layer and / or the second wiring layer. The orthographic projection of the heating coil on the second wiring layer at least partially covers the orthographic projection of the device to be annealed on the second wiring layer. The heating annealing of the device to be annealed is realized, so that the performance of the device to be annealed is improved, and the on-orbit life of a satellite is prolonged.

Description

TECHNICAL FIELD

[0001] The embodiment of the present application relates to the field of integrated circuit reliability, in particular to a circuit board, a method and a single machine module for implementing irradiation annealing in orbit. BACKGROUND

[0002] With the increase of satellite in-orbit working time, the internal components of the satellite will appear performance degradation and failure phenomenon due to the influence of space irradiation environment. At present, there is no effective measure for such in-orbit performance degradation / failure, and usually relies on anti-radiation components, and increases backup system to alleviate. The anti-radiation component market is small, and the cost is very high, and at present most commercial satellites cannot afford it; the use of backup system can alleviate to a certain extent, but even the single machine not working in orbit, its components will still be affected by space radiation, leading to performance degradation, and increasing the backup system will inevitably increase the requirements for quality and power consumption, and improve the development cost of the whole satellite. SUMMARY

[0003] The present application provides a circuit board, a method and a single machine module for implementing irradiation annealing in orbit, which realizes heating annealing of the to-be-annealed device, thereby improving the performance of the to-be-annealed device, thereby prolonging the in-orbit life of the satellite, and without the need to increase additional anti-radiation components or components for the design and manufacture of the circuit board, which can be applied to various to-be-annealed devices susceptible to irradiation.

[0004] In a first aspect, the embodiment of the present application provides a circuit board for implementing irradiation annealing in orbit, comprising: an annealing circuit, the annealing circuit comprising a heating coil, a switching unit, a temperature sensing unit, a power supply unit and a control unit;

[0005] The first end of the heating coil is connected with the first end of the switching unit; the second end of the switching unit is connected with the first pole of the power supply unit; the second pole of the power supply unit is connected with the second end of the heating coil; the control unit is connected with the control end of the switching unit and the power supply unit respectively; the temperature sensing unit is connected with the control unit;

[0006] The circuit board further comprises:

[0007] A first wiring layer;

[0008] At least one intermediate wiring layer is arranged on one side of the first wiring layer;

[0009] A second wiring layer is arranged on the side of the at least one intermediate wiring layer away from the first wiring layer; the to-be-annealed device is connected with the second wiring layer, wherein the heating coil is located on the at least one intermediate wiring layer and / or the second wiring layer, and the orthographic projection of the heating coil on the second wiring layer at least partially covers the orthographic projection of the to-be-annealed device on the second wiring layer.

[0010] Optionally, the second wiring layer comprises an annealing heating area, a normal projection of the device to be annealed on the second wiring layer is located within a normal projection of the annealing heating area on the second wiring layer.

[0011] A normal projection of the heating coil on the second wiring layer at least partially covers a normal projection of the annealing heating area on the second wiring layer.

[0012] Optionally, the heating coil is located on the intermediate wiring layer adjacent to the second wiring layer.

[0013] Optionally, the circuit board performing irradiation annealing in orbit further comprises a heat-conducting layer.

[0014] The heat-conducting layer is arranged in the same layer as the heating coil; and / or, the heat-conducting layer is arranged in the same layer as the intermediate wiring layer between the heating coil and the second wiring layer.

[0015] A normal projection of the heat-conducting layer on the second wiring layer at least covers a normal projection of the annealing heating area on the second wiring layer.

[0016] Optionally, when the heat-conducting layer is arranged in the same layer as the heating coil,

[0017] A normal projection of the heat-conducting layer on the second wiring layer does not overlap a normal projection of the heating coil on the second wiring layer.

[0018] Optionally, the second wiring layer further comprises a partition area, the partition area is located on one side adjacent to the annealing heating area.

[0019] An overlapping area of a normal projection of the heat-conducting layer on the second wiring layer and a normal projection of the partition area on the second wiring layer is less than an overlapping area of a normal projection of the heat-conducting layer on the second wiring layer and a normal projection of the annealing heating area on the second wiring layer.

[0020] Optionally, the temperature sensing unit is connected with the second wiring layer, and the temperature sensing unit is arranged adjacent to the device to be annealed.

[0021] In a second aspect, an embodiment of the present application provides a method for performing irradiation annealing in orbit, which is executed by an annealing circuit, the annealing circuit comprising a heating coil, a switching unit, a temperature sensing unit, a power supply unit and a control unit.

[0022] The control unit sends a first control signal to a control end of the switching unit, so that the switching unit is in a conductive state.

[0023] The control unit controls the current output by the power supply unit according to the temperature of the heating coil detected by the temperature sensing unit, so that the temperature of the heating coil is constant at the annealing temperature.

[0024] The heating coil heats for a first preset time, and the control unit sends a second control signal to the control end of the switch unit, so that the switch unit is in an off state.

[0025] Optionally, after the control unit sends the second control signal to the control end of the switch unit, so that the switch unit is in an off state, the method further comprises:

[0026] If the recovery of the device to be annealed does not meet the requirements, the control unit sends the first control signal to the control end of the switch unit again;

[0027] Before the control unit sends the first control signal to the control end of the switch unit again, the control unit further judges whether the annealing time of the heating coil for heating the device to be annealed is greater than a second preset time, and if the annealing time is greater than the second preset time, the recovery of the device to be annealed is stopped.

[0028] In a third aspect, an embodiment of the present application provides a single machine module, comprising the circuit board for implementing irradiation annealing in orbit according to any of the embodiments of the present application.

[0029] The circuit board for implementing irradiation annealing in orbit provided by the embodiment of the present application sets the heating coil as a heating unit of the device to be annealed by arranging the heating coil on at least one intermediate wiring layer and / or a second wiring layer of the circuit board, and the orthographic projection of the heating coil on the second wiring layer at least partially covers the orthographic projection of the device to be annealed on the second wiring layer. Therefore, when the heating coil heats up, heat can be transferred to the device to be annealed through space and the insulating layer and the corresponding wiring layer, the heating annealing of the device to be annealed is realized, the performance of the device to be annealed is improved, the on-orbit life of the satellite is prolonged, and no additional anti-radiation components or assemblies need to be added to the design and manufacture of the circuit board, which can be applied to various devices to be annealed that are susceptible to irradiation. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 FIG. 1 is a structural schematic diagram of an annealing circuit for implementing irradiation annealing in orbit provided by an embodiment of the present application;

[0031] Figure 2 FIG. 2 is a cross-sectional structural schematic diagram of a circuit board for implementing irradiation annealing in orbit provided by an embodiment of the present application;

[0032] Figure 3 FIG. 3 is another cross-sectional structural schematic diagram of a circuit board for implementing irradiation annealing in orbit provided by an embodiment of the present application.

[0033] Figure 4 A cross-sectional structure schematic diagram of a circuit board for implementing irradiation annealing on orbit is provided for another embodiment of the present application;

[0034] Figure 5 A top view structure schematic diagram of a circuit board for implementing irradiation annealing on orbit is provided for another embodiment of the present application;

[0035] Figure 6 A cross-sectional structure schematic diagram of a circuit board for implementing irradiation annealing on orbit is provided for another embodiment of the present application;

[0036] Figure 7 A method for implementing irradiation annealing on orbit is provided for another embodiment of the present application;

[0037] Figure 8 A method for implementing irradiation annealing on orbit is provided for another embodiment of the present application. DETAILED DESCRIPTION

[0038] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described below in connection with the drawings of the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of the present application.

[0039] Figure 1 A structure schematic diagram of an annealing circuit for implementing irradiation annealing on orbit is provided for another embodiment of the present application, referring to Figure 1 The circuit board for implementing irradiation annealing on orbit comprises at least one annealing circuit, and the annealing circuit comprises a heating coil 110, a switch unit 120, a temperature sensing unit 130, a power supply unit 150 and a control unit 140;

[0040] The first end of the heating coil 110 is connected with the first end of the switch unit 120; the second end of the switch unit 120 is connected with the first pole + of the power supply unit 150; the second pole - of the power supply unit 150 is connected with the second end of the heating coil 110; the control unit 140 is connected with the control end of the switch unit 120 and the power supply unit 150 respectively; and the temperature sensing unit 130 is connected with the control unit 140;

[0041] Specifically, the heating coil 110 and the switch unit 120 are connected in series, when the switch unit 120 is in the on state, the heating coil 110 is connected to the power supply unit 150, and the heating coil 110 can be heated by the power supply unit 150. The heating coil 110 can be heated by adjusting the current flowing through the heating coil 110. That is, the heating coil 110 is used to heat the device to be annealed to the annealing temperature, so as to restore the performance of the device to be annealed. The coil resistance and heating power of the heating coil 110 can be selected according to the annealing requirements of the device to be annealed.

[0042] Specifically, when the device to be annealed is annealed, the control unit 140 sends a first control signal to the switch unit 120 to adjust the switch unit 120 to the on state. The heating coil 110 generates heat after being powered on, and the temperature sensing unit 130 detects the temperature of the position where the heating coil 110 is located. When the temperature sensing unit 130 detects that the heating coil 110 is heated to the annealing temperature, the control unit 140 can control the power supply unit 150 to output a constant current to keep the temperature of the heating coil 110 constant. The annealing temperature can be 70-100℃, for example, the annealing temperature can be 70℃, 75℃, 80℃, 85℃, 90℃, 95℃ or 100℃. The device to be annealed is annealed by the heating coil 110 for a first predetermined time. The first predetermined time can be 1-7 days, for example, the first predetermined time can be 1 day, 3 days, 5 days or 7 days. After the device to be annealed is annealed for the first predetermined time, the control unit 140 sends a second control signal to the switch unit 120 to adjust the switch unit 120 to the off state, and after cooling, the performance recovery of the device to be annealed can be detected and evaluated. The on-board computer and power controller can be used as the control unit 140 to control the switch unit 120, thereby reducing the number of new devices. The annealing circuit is independent of the original circuit on the circuit board, so as not to affect the original function and reliability of the circuit board.

[0043] Figure 2 A cross-sectional structure of a circuit board for on-orbit irradiation annealing provided by the embodiment of the present application is shown in FIG. 1. Figure 2 The circuit board further comprises:

[0044] The first wiring layer 210;

[0045] The at least one intermediate wiring layer 220 is arranged on one side of the first wiring layer 210;

[0046] The second wiring layer 230 is arranged on the side of the at least one intermediate wiring layer 220 away from the first wiring layer 210; the device to be annealed is connected to the second wiring layer 230, wherein the heating coil 110 is arranged on the at least one intermediate wiring layer 220 and / or the second wiring layer 230, and the orthographic projection of the heating coil 110 on the second wiring layer 230 at least partially covers the orthographic projection of the device to be annealed on the second wiring layer 230.

[0047] Specifically, the circuit board can be a printed circuit board (PCB), and the circuit board comprises the first wiring layer 210, the at least one intermediate wiring layer 220 and the second wiring layer 230 arranged in layers, wherein an insulating layer 240 is arranged between each wiring layer to achieve insulation and isolation between the wiring layers; for example, the insulating layer 240 can be a glass fiber plate. The first wiring layer 210, the intermediate wiring layer 220 and the second wiring layer 230 can comprise at least one trace 201, which is used for signal transmission of other functional circuits in the circuit board.

[0048] The device to be annealed 202 is usually mounted on the circuit board and electrically connected to the trace 201 in the wiring layer; for example, the first wiring layer 210 can be the bottom wiring layer of the circuit board, and the second wiring layer 230 can be the top wiring layer of the circuit board, or the first wiring layer 210 can be the top wiring layer of the circuit board, and the second wiring layer 230 can be the bottom wiring layer of the circuit board. According to the design position of the device to be annealed 202 on the circuit board, the device to be annealed 202 can be mounted on the first wiring layer 210 or the second wiring layer 230. In the embodiment of the present application, the first wiring layer 210 is taken as the bottom wiring layer of the circuit board, the second wiring layer 230 is taken as the top wiring layer of the circuit board, and the device to be annealed 202 is mounted on the second wiring layer 230. Figure 2 In the embodiment, the at least one intermediate wiring layer 220 comprises two intermediate wiring layers 220, and in other embodiments, the at least one intermediate wiring layer 220 can comprise more intermediate wiring layers 220 according to the circuit design of the circuit board, which is not specifically limited herein.

[0049] The heating coil 110 can be arranged on the at least one intermediate wiring layer 220 and / or the second wiring layer 230, wherein the heating coil 110 is not electrically connected to the trace 201 of the intermediate wiring layer 220 and the second wiring layer 230, so that the heating coil 110 does not affect the normal operation of the circuit board.

[0050] For example, the heating coil 110 can be arranged on any one or more intermediate wiring layers 220, Figure 2The exemplary heating coil 110 is located on the intermediate wiring layer 220 adjacent to the second wiring layer 230. The orthographic projection of the heating coil 110 on the second wiring layer 230 at least partially covers the orthographic projection of the device to be annealed 202 on the second wiring layer 230. That is, in the stacking direction, the heating coil 110 at least partially overlaps with the projection of the device to be annealed 202. Therefore, when the heating coil 110 heats up, heat can be conducted to the device to be annealed 202 through the insulation layer 240 and the corresponding wiring layer between the heating coil 110 and the device to be annealed 202, thereby realizing the heating and annealing of the device to be annealed 202.

[0051] Figure 3 A schematic diagram of the cross-sectional structure of a circuit board subjected to on-orbit irradiation annealing, provided as an embodiment of the present invention, is shown below. Figure 3 In some embodiments, the heating coil 110 may also be disposed on the second wiring layer 230. The heating coil 110 may be disposed around the device to be annealed 202. The heating coil 110 avoids the electrical connection lines of the device to be annealed 202 to avoid affecting the device to be annealed 202. The orthographic projection of the heating coil 110 on the second wiring layer 230 at least partially covers the orthographic projection of the device to be annealed 202 on the second wiring layer 230. That is, in the stacking direction, the heating coil 110 at least partially overlaps with the projection of the device to be annealed 202. Therefore, when the heating coil 110 heats up, the heat can be conducted to the device to be annealed 202 through the insulating layer 240 and the second wiring layer 230, so as to realize the heating and annealing of the device to be annealed 202.

[0052] Figure 4 A schematic diagram of the cross-sectional structure of a circuit board subjected to on-orbit irradiation annealing, provided as an embodiment of the present invention, is shown below. Figure 4 In some embodiments, the heating coil 110 may also be disposed on at least one intermediate wiring layer 220 and a second wiring layer 230. The orthographic projection of the heating coil 110 on the second wiring layer 230 at least partially covers the orthographic projection of the device to be annealed 202 on the second wiring layer 230. Therefore, when the heating coil 110 heats up, heat can be conducted to the device to be annealed 202 through the insulating layer 240 and the corresponding wiring layer, thereby realizing the heating and annealing of the device to be annealed 202.

[0053] Based on the above embodiments, the setting position of the heating coil 110 can be comprehensively considered according to the annealing temperature of the device to be annealed 202, the temperature rising rate, and the circuit design on the circuit board. For example, when the temperature rising rate requirement is low, the heating coil 110 can be arranged on the middle wiring layer 220 relatively close to the first wiring layer 210, so as to reduce the temperature rising rate and reduce the occupation of the circuit trace 201 space of the device to be annealed 202 or other devices on the circuit board on the second wiring layer 230. When the temperature rising rate requirement is high, the heating coil 110 can be arranged on the middle wiring layer 220 adjacent to the second wiring layer 230. At this time, the distance between the heating coil 110 and the device to be annealed 202 in the stacking direction is small, and the heating coil 110 can quickly conduct to the device to be annealed 202 when heated, and the occupation of the circuit trace 201 space of the device to be annealed 202 or other devices on the circuit board on the second wiring layer 230 can be reduced. When the heating coil 110 is arranged on the second wiring layer 230, although the trace 201 space is occupied, the device to be annealed 202 can be directly annealed and heated, so as to improve the annealing and heating effect.

[0054] The circuit board for implementing irradiation annealing in orbit provided by the embodiment of the present application can set the heating coil 110 on at least one of the middle wiring layer 220 and / or the second wiring layer 230 of the circuit board, use the heating coil 110 as a heating unit of the device to be annealed 202, and the orthographic projection of the heating coil 110 on the second wiring layer 230 at least partially covers the orthographic projection of the device to be annealed 202 on the second wiring layer 230. Therefore, when the heating coil 110 is heated and rises in temperature, the heat can be conducted to the device to be annealed 202 through space and the insulating layer 240 and the corresponding wiring layer, so as to heat and anneal the device to be annealed 202, improve the performance of the device to be annealed 202, prolong the in-orbit life of the satellite, and do not need to increase additional anti-radiation components or components for the design and manufacture of the circuit board, and can be applied to various devices to be annealed 202 susceptible to radiation.

[0055] Figure 5 The top view structural schematic diagram of the circuit board for implementing irradiation annealing in orbit provided by the embodiment of the present application is shown in FIG. 4. Figure 5 The second wiring layer 230 includes an annealing and heating area 310, and the orthographic projection of the device to be annealed 202 on the second wiring layer 230 is located in the orthographic projection of the annealing and heating area 310 on the second wiring layer 230. The orthographic projection of the heating coil 110 on the second wiring layer 230 at least partially covers the orthographic projection of the annealing and heating area 310 on the second wiring layer 230.

[0056] Specifically, the second wiring layer 230 is provided with an annealing heating area 310, which is a surface area defined on the second wiring layer 230, wherein the orthographic projection of the device to be annealed 202 on the second wiring layer 230 is located in the orthographic projection of the annealing heating area 310 on the second wiring layer 230. This means that the device to be annealed 202 susceptible to radiation on the circuit board is concentrated in the annealing heating area 310. The heating coil 110 at least partially overlaps the projection of the annealing heating area 310 in the stacking direction, so that when the heating coil 110 is heated and warmed up, heat can be conducted to the annealing heating area 310 through the insulating layer 240 and the second wiring layer 230, thereby affecting the device to be annealed 202, and achieving batch heating annealing of the device to be annealed 202. Optionally, the orthographic projection of the heating coil 110 on the second wiring layer 230 can be entirely located in the orthographic projection of the annealing heating area 310 on the second wiring layer 230, so as to reduce the temperature influence on other areas of the circuit board.

[0057] For example, according to the annealing temperature, the temperature rising rate of the device to be annealed 202, and the circuit design on the circuit board, a plurality of devices to be annealed 202 in the annealing heating area 310 can correspond to a group of heating coils 110, or one device to be annealed 202 can correspond to a group of heating coils 110. For different devices to be annealed 202, the corresponding heating coils 110 can be arranged on different wiring layers, i.e., can be arranged on at least one of the intermediate wiring layers 220 and / or the second wiring layer 230.

[0058] Continuing to refer to Figure 2 Optionally, the heating coil 110 is located on the intermediate wiring layer 220 adjacent to the second wiring layer 230. Specifically, the heating coil 110 is located on the intermediate wiring layer 220 adjacent to the second wiring layer 230, so that the distance between the heating coil 110 and the device to be annealed 202 in the stacking direction is smaller, and the heating coil 110 can quickly conduct heat to the device to be annealed 202 when heated. By relying on the difference in thermal conductivity between the insulating layer 240 and the wiring layer in the circuit board, the influence of the heating coil 110 on other devices when heated can be reduced, and the space occupied by the device to be annealed 202 on the second wiring layer 230 or the circuit trace 201 of other devices on the circuit board can be reduced. For example, the connection end of the heating coil 110 can be led out through a through hole, the through hole penetrating through the insulating layer 240 adjacent to the second wiring layer 230, to realize the connection between the heating coil 110 and the switch unit 120. The switch unit 120 can be arranged on the circuit board together with the heating coil 110, or the switch unit 120 can be arranged on another circuit board, and the connection between the switch unit 120 and the heating coil 110 can be realized by a wire harness.

[0059] Figure 6 Another cross-sectional structure of the circuit board provided by the embodiment of the present application for on-orbit implementation of irradiation annealing is shown in FIG. 6.Figure 6 The circuit board on which the irradiation annealing is implemented in orbit further comprises a heat-conducting layer 410. The heat-conducting layer 410 is used to improve the heat conductivity of the circuit board, and the heat-conducting layer 410 can be made of copper. The heat-conducting layer 410 can be arranged in the same layer as the heating coil 110, for example, arranged on the intermediate wiring layer 220 adjacent to the second wiring layer 230 on which the heating coil 110 is arranged. Figure 6 Optionally, when the heat-conducting layer 410 is arranged in the same layer as the heating coil 110, the orthogonal projection of the heat-conducting layer 410 on the second wiring layer 230 does not overlap the orthogonal projection of the heating coil 110 on the second wiring layer 230, that is, the heat-conducting layer 410 can be arranged between the gaps between the heating coils 110, so as to improve the heat conductivity of the insulating layer 240 adjacent to the heating coil 110 and improve the heating uniformity in the annealing heating area 310. The orthogonal projection of the heat-conducting layer 410 on the second wiring layer 230 at least covers the orthogonal projection of the annealing heating area 310 on the second wiring layer 230, so that the heat-conducting layer 410 can improve the heat conductivity of the corresponding position of the annealing heating area 310 without affecting the performance of other wiring areas on the circuit board.

[0060] In some other embodiments, the heat-conducting layer 410 can also be arranged in the same layer as the intermediate wiring layer 220 between the heating coil 110 and the second wiring layer 230, that is, the heat-conducting layer 410 is arranged in a different layer from the heating coil 110, and the heat-conducting layer 410 can be arranged on the intermediate wiring layer 220 between the heating coil 110 and the second wiring layer 230, that is, on the intermediate wiring layer 220 between the heating coil 110 and the device 202 to be annealed. At this time, the orthogonal projection of the heat-conducting layer 410 on the second wiring layer 230 overlaps the orthogonal projection of the heating coil 110 on the second wiring layer 230, and the heat-conducting layer 410 can increase the heat-conducting area and improve the heat conductivity of the circuit board. Similarly, the orthogonal projection of the heat-conducting layer 410 on the second wiring layer 230 at least covers the orthogonal projection of the annealing heating area 310 on the second wiring layer 230, so that the heat-conducting layer 410 can improve the heat conductivity of the corresponding position of the annealing heating area 310, improve the heating uniformity in the annealing heating area 310, and reduce the performance impact on other wiring areas on the circuit board. It should be noted that the heat-conducting layer 410 is not electrically connected to the wiring 201, so as to avoid affecting the signal conduction of the wiring 201.

[0061] Continuing to refer to Figure 5The second wiring layer 230 further comprises a partition area 320, which is a surface area defined on the second wiring layer 230, and is located at one side adjacent to the annealing heating area 310. The partition area 320 is used to partition the annealing heating area 310 and other device areas on the circuit board. In order to reduce the influence of the heating coil 110 on the other device areas on the circuit board, the overlapping area of the orthographic projection of the heat conduction layer 410 on the second wiring layer 230 and the orthographic projection of the partition area 320 on the second wiring layer 230 needs to be as small as possible. That is, by reducing the overlapping area of the orthographic projection of the heat conduction layer 410 and the partition area 320, the thermal conductivity of the partition area 320 is reduced to reduce the temperature influence on the other device areas. Therefore, by limiting the overlapping area of the orthographic projection of the heat conduction layer 410 on the second wiring layer 230 and the orthographic projection of the partition area 320 on the second wiring layer 230 to be smaller than the overlapping area of the orthographic projection of the heat conduction layer 410 on the second wiring layer 230 and the orthographic projection of the annealing heating area 310 on the second wiring layer 230, the overlapping area of the orthographic projection of the heat conduction layer 410 and the partition area 320 is reduced as much as possible, and the thermal conductivity of the partition area 320 is reduced to reduce the temperature influence on the other device areas.

[0062] Continuing to refer to Figure 5 Optionally, the temperature sensing unit 130 is connected to the second wiring layer 230, and the temperature sensing unit 130 is arranged adjacent to the device to be annealed 202.

[0063] Specifically, the temperature sensing unit 130 is electrically connected to the trace 201 of the second wiring layer 230, and the temperature sensing unit 130 can be arranged adjacent to one side of the device to be annealed 202. The real-time temperature in the device to be annealed 202 and the annealing heating area 310 is detected by the temperature sensing unit 130. Therefore, the heating temperature of the device to be annealed 202 during the annealing process can be monitored by the temperature sensing unit 130, and the heating current and heating power are controlled in real time by the control unit 140, thereby improving the accuracy of the annealing heating of the device to be annealed 202. For example, the temperature sensing unit 130 can be a conventional chip-type temperature sensor, and the working temperature of the chip-type temperature sensor (-40℃ to +125℃) can cover the temperature required for annealing the device to be annealed 202. The chip-type temperature sensor has a small volume and does not affect the original design, production and functional performance of the single machine module.

[0064] The embodiment of the present application also provides a single machine module, which is a functional modular component of a satellite or a spacecraft. The single machine module comprises the on-orbit irradiation annealing circuit board according to any of the embodiments of the present application, the circuit board is fixed after the structure frame is assembled to form the single machine module, and the single machine module is installed in the interior of the satellite or the spacecraft. The single machine module has the same beneficial effects as the on-orbit irradiation annealing circuit board according to any of the embodiments of the present application, and thus will not be described here. For the single machine module with a backup, the main single machine module and the backup single machine module can both comprise the on-orbit irradiation annealing circuit board according to any of the embodiments of the present application.

[0065] Figure 7 The embodiment of the present application provides an on-orbit irradiation annealing method, which can be applied to the performance recovery of devices affected by irradiation in a single machine module of an on-orbit satellite or spacecraft. The method can be executed by an annealing circuit, which comprises a heating coil 110, a switch unit 120, a temperature sensing unit 130 and a control unit 140. The method specifically comprises the following steps:

[0066] S110, the control unit 140 sends a first control signal to the control end of the switch unit 120, so that the switch unit 120 is in a conductive state;

[0067] Specifically, after the satellite or the spacecraft is launched into orbit, the control unit 140 controls the switch unit 120 to be in an off state in a normal state, and the heating coil 110 is in a non-working state. After the satellite or the spacecraft runs in orbit for a period of time, whether annealing is needed can be determined according to the telemetry parameters of the single machine module.

[0068] When the single machine module needs to be annealed, the control unit 140 corresponding to the single machine module can control the switch unit 120 to be in a conductive state. For example, the control unit 140 can use an on-board computer, a power supply controller or other control devices as the control unit 140 to control the switch unit 120, thereby reducing the number of additional devices.

[0069] S120, the control unit 140 controls the current output by the power supply unit 150 according to the temperature of the heating coil 110 detected by the temperature sensing unit 130, so that the temperature of the heating coil 110 is constant at an annealing temperature;

[0070] Specifically, the heating coil 110 generates heat after being powered on, and the temperature sensing unit 130 detects the temperature at the position of the heating coil 110. When the temperature sensing unit 130 detects that the heating coil 110 is heated to the annealing temperature, the control unit 140 can control the power supply unit 150 to output a constant current to maintain the temperature of the heating coil 110 constant. For example, the annealing temperature can be between 70℃ and 100℃, for example, the annealing temperature can be 70℃, 75℃, 80℃, 85℃, 90℃, 95℃ or 100℃. The device to be annealed 202 is annealed by the heating coil 110 for a first preset time, for example, the first preset time can be 1-7 days, for example, the first preset time can be 1 day, 3 days, 5 days or 7 days.

[0071] In S130, the heating coil 110 is heated for a first preset time, and the control unit 140 sends a second control signal to the control end of the switch unit 120, so that the switch unit 120 is in an off state.

[0072] Specifically, after the device to be annealed 202 is annealed for a first preset time, the control unit 140 sends a second control signal to the switch unit 120, so that the switch unit 120 is adjusted to an off state, and after waiting for cooling, the performance recovery of the device to be annealed 202 can be detected and evaluated.

[0073] Optionally, after the heating coil 110 is heated for a preset time, the control unit 140 sends a second control signal to the control end of the switch unit 120, so that the switch unit 120 is in an off state, further comprising:

[0074] If the recovery of the device to be annealed 202 does not meet the requirements, the control unit 140 sends a first control signal to the control end of the switch unit 120 again;

[0075] Specifically, after waiting for the temperature of the circuit board to drop to the working temperature range, the performance recovery of the device to be annealed 202 can be detected, if it meets the requirements, the annealing process is ended, if the recovery of the device to be annealed 202 does not meet the requirements, the control unit 140 sends a first control signal to the control end of the switch unit 120 again, and the annealing process is executed again.

[0076] Optionally, before the control unit 140 sends the first control signal to the control end of the switch unit 120 again, the control unit 140 further judges whether the annealing time of the heating coil 110 heating the to-be-annealed device 202 is greater than the second preset time, and if greater than the second preset time, the annealing recovery of the to-be-annealed device 202 is stopped. That is, if the annealing time of heating the to-be-annealed device 202 reaches the maximum time, that is, the annealing time of multiple annealing heating of the to-be-annealed device 202 is greater than the second preset time, and the recovery requirement of the to-be-annealed device 202 cannot be met, the annealing recovery of the to-be-annealed device 202 is stopped, so as to avoid the multiple heating of the circuit board affecting the performance of other devices.

[0077] Figure 8 Another method for on-orbit irradiation annealing provided by the embodiment of the application is provided in the method for on-orbit irradiation annealing Figure 8 , comprising:

[0078] S1, after the satellite or spacecraft runs on orbit for a period of time, whether annealing is needed can be determined according to the telemetry parameters of the single machine module. If the single machine module needs to be annealed, S2, for the single machine module with backup, if the main single machine module needs to be annealed, the main single machine module can be switched to the backup single machine module first, and then the main single machine module is powered off. For the single single machine module, it can be powered off when the single machine module is not in the working state.

[0079] S3, after determining that the single machine module is powered off, the control unit 140 sends the first control signal to the control end of the switch unit 120, so that the switch unit 120 is in the conductive state, the heating coil 110 generates heat after being powered on, and the to-be-annealed element is heated to the annealing temperature. The temperature sensing unit 130 detects the temperature of the position where the heating coil 110 is located, and the control unit 140 can control the power supply unit 150 to output a constant current to maintain the temperature of the heating coil 110 constant.

[0080] S4, whether the annealing time of the to-be-annealed device 202 meets the first preset time is judged, and if not, the power-on heating is continued.

[0081] If yes, S5, the control unit 140 sends the second control signal to the switch unit 120, so that the switch unit 120 is adjusted to the off state, and the temperature of the circuit board is waited to drop to the working temperature range.

[0082] S6, the single machine module is started, and the performance recovery degree of the to-be-annealed device 202 is judged. If the recovery requirement is met, S7, the single machine module works normally, and the annealing process is ended.

[0083] If the to-be-annealed device 202 does not meet the requirement, S8, whether the annealing time of the heating coil 110 heating the to-be-annealed device 202 is greater than the second preset time is judged.

[0084] If no, return to step S2 to perform the annealing heating process again.

[0085] If yes, it indicates that the annealing time of the multiple heating of the device to be annealed 202 reaches the maximum time sum, that is, the annealing time of the multiple annealing heating of the device to be annealed 202 is greater than the second preset time, and still cannot meet the recovery requirement of the device to be annealed 202, and the annealing recovery of the device to be annealed 202 is stopped to avoid the multiple heating of the circuit board to affect the performance of other devices.

[0086] The method for implementing the irradiation annealing in orbit provided by the embodiments of the present application can also be directly applied to the corresponding functional circuit. For example, two circuits with the same function are arranged in the single machine module, the two circuits are cold backup circuits for each other, the device in the circuit not in the working state is annealed, the performance recovery of the corresponding device can be realized, and thus the backup single machine module needs not to be additionally configured or can be reduced.

[0087] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A circuit board subjected to in-orbit irradiation annealing, characterized in that, include: An annealing circuit, the annealing circuit including a heating coil, a switching unit, a temperature sensing unit, a power supply unit and a control unit; The first end of the heating coil is connected to the first end of the switching unit; the second end of the switching unit is connected to the first pole of the power supply unit; the second pole of the power supply unit is connected to the second end of the heating coil; the control unit is connected to the control terminal of the switching unit and the power supply unit respectively; the temperature sensing unit is connected to the control unit. The circuit board also includes: First wiring layer; At least one intermediate wiring layer is disposed on one side of the first wiring layer; The second wiring layer is disposed on a side away from the first wiring layer from the at least one intermediate wiring layer; the device to be annealed is connected to the second wiring layer, wherein the heating coil is located in the at least one intermediate wiring layer and / or the second wiring layer, and the orthographic projection of the heating coil on the second wiring layer at least partially covers the orthographic projection of the device to be annealed on the second wiring layer; The second wiring layer includes an annealing heating zone, and the orthographic projection of the device to be annealed on the second wiring layer is located within the orthographic projection of the annealing heating zone on the second wiring layer; The orthographic projection of the heating coil on the second wiring layer at least partially covers the orthographic projection of the annealing heating zone on the second wiring layer; It also includes a heat-conducting layer; The heat-conducting layer is disposed in the same layer as the heating coil; and / or, the heat-conducting layer is disposed in the same layer as the intermediate wiring layer between the heating coil and the second wiring layer; The orthographic projection of the thermally conductive layer on the second wiring layer at least covers the orthographic projection of the annealing heating zone on the second wiring layer; The thermally conductive layer is made of copper.

2. The circuit board subjected to on-orbit irradiation annealing according to claim 1, characterized in that, The heating coil is located on the intermediate wiring layer adjacent to the second wiring layer.

3. The circuit board subjected to on-orbit irradiation annealing according to claim 1, characterized in that, When the heat-conducting layer is disposed in the same layer as the heating coil The orthographic projection of the heat-conducting layer on the second wiring layer does not overlap with the orthographic projection of the heating coil on the second wiring layer.

4. The circuit board subjected to on-orbit irradiation annealing according to claim 1, characterized in that, The second wiring layer further includes a segmentation area located on the adjacent side of the annealing heating zone; The overlapping area of ​​the orthographic projection of the thermally conductive layer on the second wiring layer and the orthographic projection of the segmented area on the second wiring layer is smaller than the overlapping area of ​​the orthographic projection of the thermally conductive layer on the second wiring layer and the orthographic projection of the annealing heating area on the second wiring layer.

5. The circuit board subjected to on-orbit irradiation annealing according to claim 1, characterized in that, The temperature sensing unit is connected to the second wiring layer and is disposed adjacent to the device to be annealed.

6. A method for performing irradiation annealing in orbit, characterized in that, The annealing is performed by the annealing circuit according to any one of claims 1-5, the annealing circuit comprising a heating coil, a switching unit, a temperature sensing unit, a power supply unit, and a control unit; The control unit sends a first control signal to the control terminal of the switch unit, so that the switch unit is in the conducting state; The control unit controls the current output by the power supply unit based on the temperature of the heating coil detected by the temperature sensing unit, so that the temperature of the heating coil is kept constant at the annealing temperature. When the heating coil heats for a first preset time, the control unit sends a second control signal to the control terminal of the switching unit to make the switching unit in the off state.

7. The method for performing on-orbit irradiation annealing according to claim 6, characterized in that, After the heating coil has been heated for a preset time, and the control unit sends a second control signal to the control terminal of the switching unit to put the switching unit into a closed state, the process further includes: If the annealed device fails to meet the recovery requirements, the control unit sends the first control signal to the control terminal of the switching unit again. Before the control unit sends the first control signal to the control terminal of the switching unit again, the control unit also determines whether the annealing time of the heating coil heating the device to be annealed is greater than the second preset time. If it is greater than the second preset time, the annealing of the device to be annealed will be stopped and resumed.

8. A standalone module, characterized in that, The circuit board includes the circuit board subjected to on-orbit irradiation annealing as described in any one of claims 1-5.

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