Light emitting diode and light emitting device
By adjusting the overlap area between the pad and the current barrier layer, the problem of the current barrier layer in the light emitting diode is solved, and the reliability of the equipment is improved.
Patent Information
- Application Number
- CN202411767636.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-04
- Publication Date
- 2025-03-28
AI Technical Summary
The current barrier layer of existing light emitting diodes is prone to break during the packaging wiring process, resulting in the risk of electrode deleting and affecting reliability.
By defining the overlap area of the horizontal projection of the pad and the horizontal projection of the first barrier portion in the light emitting diode, it accounts for 20% to 55% of the horizontal projection area of the pad, so as to reduce the stress of the current barrier layer and reduce the chance of breaking.
It effectively reduces the chance of breaking the current barrier layer, avoids abnormal electrode loss, and improves the reliability of the light emitting diode.
Smart Images
Figure CN119730500A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of semiconductor devices, and in particular to a light emitting diode and a light emitting device. Background Art
[0002] Light Emitting Diode (LED) is a component made of semiconductor materials. It is a tiny solid-state light source that can convert electrical energy into light energy. Due to its small size, long life, low driving voltage, low heat generation, low power consumption, fast response speed, no mercury pollution and other environmental issues, as well as the characteristics and advantages of single-sense light emission, and its ability to meet the requirements of light, thin, and miniaturized various application equipment, it is widely used in lighting, display screens, automobiles, communications and other fields.
[0003] The P electrode of an existing light-emitting diode usually includes a pad and an extension strip, and a current blocking layer (CBL) is provided below the pad and the extension strip to block the vertical injection of current and increase the lateral expansion of current. However, during the subsequent packaging and wiring process, the current blocking layer under the pad is subjected to greater force and is prone to breakage, resulting in the risk of electrode falling off, affecting the reliability of the light-emitting diode. Summary of the invention
[0004] In view of the defects and shortcomings of light-emitting diodes in the prior art, the present application provides a light-emitting diode and a light-emitting device to improve the reliability of the light-emitting diode.
[0005] An embodiment of the present application provides a light emitting diode, including: A semiconductor stack, comprising a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence; A current blocking layer, located on the second semiconductor layer, the current blocking layer comprising a first blocking portion and a second blocking portion; a transparent conductive layer, covering at least a portion of the upper surface and the side surface of the current blocking layer and a portion of the upper surface of the second semiconductor layer, wherein the transparent conductive layer has a through hole, and the through hole exposes a portion of the upper surface of the first blocking portion; A first electrode, located above the first semiconductor layer and electrically connected to the first semiconductor layer; a second electrode, located above the second semiconductor layer and electrically connected to the second semiconductor layer, the second electrode comprising a pad and at least one extension strip extending from the pad, wherein the pad is arranged corresponding to the first blocking portion, the extension strip is arranged corresponding to the second blocking portion, the pad is in direct contact with the transparent conductive layer, and is in direct contact with the first blocking portion through a through hole; Looking down from above the light-emitting diode, a horizontal projection of the solder pad and a horizontal projection of the first blocking portion have an overlapping area, and the overlapping area accounts for 20% to 55% of the horizontal projection area of the solder pad.
[0006] Another embodiment of the present application provides a light-emitting device, comprising any of the light-emitting diodes described above.
[0007] As described above, the light emitting diode and the light emitting device of the present application have the following beneficial effects: The light-emitting diode of the present application limits the overlapping area between the horizontal projection of the solder pad and the horizontal projection of the first blocking portion, so that the overlapping area accounts for 20% to 55% of the horizontal projection area of the solder pad, so as to effectively reduce the probability of the current blocking layer breaking without losing much luminous brightness, thereby improving the abnormality of electrode falling and further improving the reliability of the light-emitting diode.
[0008] Other features and beneficial effects of the present application will be described in the subsequent description, and some of the technical features and beneficial effects can be obviously derived from the description or understood by implementing the present application. BRIEF DESCRIPTION OF THE DRAWINGS
[0009] Figure 1 It is a schematic structural diagram of an embodiment of a light emitting diode of the present application.
[0010] Figure 2 yes Figure 1 The light emitting diode is shown in a cross-sectional view along line AA'.
[0011] Figure 3 yes Figure 1 A partial enlarged schematic diagram of the second electrode in the light emitting diode shown.
[0012] Figure 4 It is a structural schematic diagram of another embodiment of the light emitting diode of the present application.
[0013] Figure 5 yes Figure 4 A partial enlarged schematic diagram of the second electrode in the light emitting diode shown.
[0014] Figure 6 It is a structural schematic diagram of another embodiment of the light emitting diode of the present application.
[0015] Figure 7 yes Figure 6 A partial enlarged schematic diagram of the second electrode in the light emitting diode shown.
[0016] Figure 8 It is a structural schematic diagram of yet another embodiment of the light emitting diode of the present application.
[0017] Fig. 9 yes Figure 8 A partial enlarged schematic diagram of the second electrode in the light emitting diode is shown.
[0018] Fig.10 It is a structural schematic diagram of yet another embodiment of the light emitting diode of the present application.
[0019] Fig.11 yes Fig.10 A partial enlarged schematic diagram of the second electrode in the light emitting diode shown.
[0020] Fig.12 It is a structural schematic diagram of yet another embodiment of the light emitting diode of the present application.
[0021] Fig.13 yes Fig.12 A partial enlarged schematic diagram of the second electrode in the light emitting diode shown.
[0022] Fig.14 It is a schematic diagram of the structure of the light-emitting device of the present application.
[0023] Component number description 1. Light-emitting diode; 10. Substrate; 20. Semiconductor stack; 21. First semiconductor layer; 22. Active layer; 23. Second semiconductor layer; 30. Current blocking layer; 301. First blocking portion; 3011. First portion; 3012. Second portion; 3013. Gap; 302. Second blocking portion; 31. Second antenna; 32. Second recess; 40. Transparent conductive layer; 41. Through hole; 50. First electrode; 60. Second electrode; 61. Pad; 62. Extension strip; 63. First antenna; 64. First recess; 7. Light-emitting device; 8. Circuit substrate; D. Overlap area. DETAILED DESCRIPTION
[0024] In order to enable those skilled in the art to better understand the technical solution of the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described implementation methods are only part of the implementation methods of the present application, rather than all the implementation methods. Based on the implementation methods in the present application, all other implementation methods obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present application.
[0025] An embodiment of the present application provides a light emitting diode, including: A semiconductor stack, comprising a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence; A current blocking layer, located on the second semiconductor layer, the current blocking layer comprising a first blocking portion and a second blocking portion; a transparent conductive layer, covering at least a portion of the upper surface and the side surface of the current blocking layer and a portion of the upper surface of the second semiconductor layer, wherein the transparent conductive layer has a through hole, and the through hole exposes a portion of the upper surface of the first blocking portion; A first electrode, located above the first semiconductor layer and electrically connected to the first semiconductor layer; a second electrode, located above the second semiconductor layer and electrically connected to the second semiconductor layer, the second electrode comprising a pad and at least one extension strip extending from the pad, wherein the pad is arranged corresponding to the first blocking portion, the extension strip is arranged corresponding to the second blocking portion, the pad is in direct contact with the transparent conductive layer, and is in direct contact with the first blocking portion through a through hole; Looking down from above the light-emitting diode, a horizontal projection of the solder pad and a horizontal projection of the first blocking portion have an overlapping area, and the overlapping area accounts for 20% to 55% of the horizontal projection area of the solder pad.
[0026] By limiting the overlapping area between the horizontal projection of the solder pad and the horizontal projection of the first blocking portion, the stress on the first blocking portion is reduced without sacrificing the luminous brightness, thereby effectively reducing the probability of the first blocking portion breaking, thereby avoiding the abnormality of electrode falling, and improving the overall reliability of the light-emitting diode.
[0027] In some embodiments, the overlapping area accounts for 20% to 50% of the horizontal projection area of the pad, which better balances the reliability and luminous efficiency of the light-emitting diode.
[0028] In some embodiments, the pad has a first feeler, and the first feeler extends beyond the edge of the first blocking portion, so as to disperse the force acting on the first blocking portion during the bonding process to prevent it from being broken.
[0029] In some embodiments, the distance between the center of the pad and the end of the first antenna is not less than 5 μm, so as to prevent a shorter path from affecting the lateral expansion effect of the current and causing the problem of current clustering.
[0030] In some embodiments, the width of the first antenna gradually decreases in the direction away from the pad, which can ensure that the first antenna can reduce the absorption of light from the LED while dispersing the bonding force and avoiding the breakage of the first blocking portion, thereby reducing production costs.
[0031] In some embodiments, the first blocking portion has a second feeler, and the second feeler is located below the first feeler. By correspondingly arranging the second feeler with insulating properties, the lateral expansion of the current can be improved, thereby improving the luminous brightness.
[0032] In some embodiments, the first feeler exceeds the second feeler, which can protect the first blocking portion to a certain extent and disperse the force applied thereto, thereby reducing the probability of breakage and improving the reliability of the light-emitting diode.
[0033] In some embodiments, the width of the first antenna is not greater than the width of the second antenna to further enhance the lateral expansion of the current.
[0034] In some embodiments, the first blocking portion is a discontinuous structure. In some embodiments, the second blocking portion is a continuous structure or a discontinuous structure. When the blocking portion is a continuous structure, the function of the current blocking layer can be further enhanced, that is, the performance of the lateral expansion of the current can be further enhanced; when the blocking portion is a discontinuous structure (for example, a separated block), the projected overlapping area between the electrode and the current blocking layer can be further reduced to disperse the force and reduce the probability of the electrode falling off.
[0035] In some embodiments, the first blocking portion includes a first portion and a second portion, the second portion surrounds the first portion, and a gap is formed between the first portion and the second portion, and the gap exposes a portion of the upper surface of the second semiconductor layer. By setting the gap, there is direct contact between the electrode (pad) and the second semiconductor layer, thereby strengthening the adhesion between the electrode and the second semiconductor layer and avoiding the defect of electrode falling off.
[0036] In some embodiments, the gap is annular, and the minimum width of the gap is not less than 5 μm. By limiting the shape and width of the gap, it is possible to avoid the contact area between the electrode (pad) and the second semiconductor layer being too small, and further improve the adhesion between the two.
[0037] In some embodiments, the edge of the pad has a first recess, which can balance the area of the pad and avoid serious light absorption in a larger area. At the same time, it can also improve the stress condition of the first blocking part and reduce the possibility of breakage.
[0038] In some embodiments, the edge of the first blocking portion has a second recess, which can balance the area of the current blocking portion, avoid serious light absorption in a larger area, and ensure the light emitting brightness of the light emitting diode.
[0039] According to another embodiment of the present application, a light-emitting device is provided, comprising a light-emitting diode according to any one of the above embodiments, so as to effectively improve the reliability of the light-emitting device.
[0040] The technical solution of the present application will be clearly and completely described below through a variety of specific implementation methods in conjunction with the drawings in the embodiments of the present application. Example 1
[0041] Figure 1is a schematic diagram of the structure of an embodiment of a light emitting diode of the present application, Figure 2 yes Figure 1 The schematic cross-sectional view of the light emitting diode along the line AA' shown in FIG. Figure 3 yes Figure 1 A partial enlarged schematic diagram of the second electrode in the light emitting diode shown.
[0042] Reference Figures 1 to 3 The embodiment of the present application provides a light emitting diode 1 including: a semiconductor stack 20, a current blocking layer 30, a transparent conductive layer 40 and an electrode. The semiconductor stack 20 includes a first semiconductor layer 21, an active layer 22 (or light emitting layer, active layer) and a second semiconductor layer 23 stacked in sequence.
[0043] Specifically, the semiconductor stack 20 can be formed on the substrate 10 by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor deposition (HVPE), physical vapor deposition (PVD) or ion plating. Specifically, the substrate 10 can be an insulating substrate, preferably made of a transparent material or a semi-transparent material or a non-transparent material. In the present embodiment, the substrate 10 is a sapphire (Al2O3) substrate. In other embodiments, the substrate 10 can be a patterned sapphire substrate, but not limited thereto, to improve the luminous brightness. The substrate 10 can also be made of a conductive or semiconductor material. For example, the substrate 10 can be at least one of silicon carbide (SiC), silicon (Si), magnesium aluminum oxide (MgAl2O4), magnesium oxide (MgO), aluminum gallium oxide (LiGaO2) and gallium nitride (GaN). In some embodiments, the substrate 10 can be thinned or removed.
[0044] The semiconductor stack 20 can provide light with a specific central emission wavelength, such as blue light, green light, red light, purple light, or ultraviolet light. In the present embodiment, the first semiconductor layer 21 in the semiconductor stack 20 is an N-type semiconductor layer, which can provide electrons to the active layer 22 under the action of a power source. In an optional embodiment, the N-type semiconductor layer in the first semiconductor layer 21 includes an N-type doped nitride layer, such as N-GaN. The N-type doped nitride layer may include one or more N-type impurities of group IV elements. The N-type impurity may be one of Si, Ge, Sn, or a combination thereof, preferably using impurity Si.
[0045] The active layer 22 is the region where the light emitting diode 1 actually emits light, and it may be a multiple quantum well (MQWs) structure in which well layers and barrier layers are alternately stacked. The active layer 22 may include a multiple quantum well structure of GaN / AlGaN, InGaN / GaN or InGaN / AlGaN. In the present embodiment, the well layer of the active layer 22 is InGaN, and the barrier layer is GaN and / or AlGaN. In order to improve the luminous efficiency of the active layer 22, it may be achieved by changing the depth of the quantum well, the number of well layers and barrier layers, thickness and / or other features in the active layer 22.
[0046] In this embodiment, the second semiconductor layer 23 in the semiconductor stack 20 is a P-type semiconductor layer, which can provide holes to the active layer under the action of a power supply. In an optional embodiment, the P-type semiconductor layer in the second semiconductor layer 23 includes a P-type doped nitride layer, such as P-GaN. The P-type doped nitride layer may include one or more P-type impurities of group II elements. The P-type impurity may be one of Mg, Zn, Be or a combination thereof, preferably using the impurity Mg.
[0047] The first semiconductor layer 21 , the active layer 22 and the second semiconductor layer 23 are only the basic constituent units of the semiconductor stack 20 . On this basis, the semiconductor stack 20 may further include other functional layers that optimize the performance of the light-emitting diode 1 , such as a buffer layer, an electron blocking layer (EBL), etc.
[0048] Continue to refer to Figure 2 In the chip manufacturing process, a portion of the first semiconductor layer 21, the active layer 22 and the second semiconductor layer 23 are removed by an etching process to expose a portion of the upper surface of the first semiconductor layer 21 to form a step area (MESA) to facilitate the subsequent formation of electrodes.
[0049] Next, a current blocking layer 30 is formed on a portion of the upper surface of the second semiconductor layer 23 of the semiconductor stack 20 to block the current from being vertically injected into the second semiconductor layer 23 and to enhance the lateral expansion capability of the current. Subsequently, a transparent conductive layer 40 is formed to further enhance the current expansion capability. The transparent conductive layer 40 at least covers a portion of the upper surface, the side surface, and a portion of the upper surface of the second semiconductor layer 23 of the current blocking layer 30, and a through hole 41 is provided in the transparent conductive layer 40 to expose a portion of the upper surface of the current blocking layer 30. Finally, electrodes are formed on the semiconductor stack 20, and the electrodes include a first electrode 50 formed on the first semiconductor layer 21 and a second electrode 60 formed on the second semiconductor layer 23.
[0050] Specifically, the current blocking layer 30 is an insulating material layer, which can be at least one of transparent inorganic insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, titanium oxide or aluminum oxide. The current blocking layer 30 can also be a single layer or an alternating multilayer structure, and the single layer can be a material with a high light transmittance, for example, higher than 80%, such as silicon oxide. The current blocking layer 30 can also be a reflective material formed by combining a multilayer structure, and the reflectivity is higher than 60%, such as a Bragg reflector. In this embodiment, the current blocking layer 30 is preferably silicon dioxide (SiO2). The thickness of the current blocking layer 30 can be selected from any thickness between 50nm and 500nm. The current blocking layer 30 can be used to block the current injected from the second electrode 60 (P electrode) into the light-emitting diode 1 from directly entering the second semiconductor layer 23 vertically, avoiding crowding or aggregation of the current below the second electrode 60, promoting the expansion of the current in the second semiconductor layer 23, and achieving uniform distribution of the current.
[0051] The transparent conductive layer 40 is conducive to forming an ohmic contact with the second semiconductor layer 23, wherein the transparent conductive layer 40 may include a light-transmitting and conductive material, such as a conductive oxide or a light-transmitting metal layer, which is conducive to having a high optical transmittance for the light emitted by the active layer 22. In addition, the transparent conductive layer 40 may include at least one of ITO (indium tin oxide), ZnO (zinc oxide), ZITO (zinc indium tin oxide), ZIO (zinc indium oxide), ZTO (zinc tin oxide), GITO (gallium indium tin oxide), GIO (gallium indium oxide), GZO (gallium zinc oxide), AZO (aluminum-doped zinc oxide), and FTO (fluorine tin oxide). Preferably, the transparent conductive layer 40 is indium tin oxide (ITO). In an optional embodiment, the coverage area of the transparent conductive layer 40 on the upper surface of the second semiconductor layer 23 is at least 80% or further can be at least 90%, but the upper surface of the second semiconductor layer 23 cannot be fully covered (100%) to avoid leakage.
[0052] The electrodes in the light-emitting diode 1 include a first electrode 50 and a second electrode 60, and the two are separated from each other. In the present embodiment, the first electrode 50 is an N electrode, and the second electrode 60 is a P electrode. In some embodiments, both the N electrode and the P electrode can be formed by stacking one or more electrode layers of metals such as chromium, nickel, aluminum, titanium, platinum, gold, palladium, silver, etc. Among them, the first electrode 50 is located above the first semiconductor layer 21, specifically arranged on the upper surface of the first semiconductor layer 21, so that an electrical connection is formed between the first electrode 50 and the first semiconductor layer 21. The second electrode 60 is located above the second semiconductor layer 23, and specifically most of it is arranged on the upper surface of the transparent conductive layer 40 and the current blocking layer 30, so that an electrical connection is formed between the second electrode 60 and the second semiconductor layer 23.
[0053] In this embodiment, the current blocking layer 30 includes a first blocking portion 301 and a second blocking portion 302, and the second electrode 60 includes a pad 61 and at least one extension bar 62 led out from the pad 61, wherein the pad 61 is used for injecting external current, and the extension bar 62 is used for horizontally diffusing the current. The first blocking portion 301 is arranged corresponding to the pad 61, specifically, the first blocking portion 301 is basically arranged below the pad 61, and the second blocking portion 302 is arranged corresponding to the extension bar 62, specifically, the second blocking portion 302 is basically arranged below the extension bar 62.
[0054] Furthermore, the pad 61 is in direct contact with the transparent conductive layer 40, and the through hole 41 of the transparent conductive layer 40 specifically exposes a portion of the upper surface of the first barrier 301, so that the pad 61 can be in direct contact with the first barrier 301 through the through hole 41, and the extension bar 62 is located on the transparent conductive layer 40, and the two are in direct contact. In this embodiment, the pad 61 and the first barrier 301 are arranged in a quasi-circular or ring shape, and the extension bar 62 and the second barrier 302 are arranged in a strip shape, and the application does not impose any particular restrictions on the specific shapes of each structure.
[0055] Furthermore, the first barrier 301 includes a first portion 3011 and a second portion 3012. Specifically, the first barrier 301 is a discontinuous structure, that is, the first portion 3011 and the second portion 3012 are discontinuous structures, wherein the second portion 3012 surrounds the first portion 3011, and a gap 3013 is formed between the first portion 3011 and the second portion 3012, and the gap 3013 exposes a portion of the upper surface of the second semiconductor layer 23, so that a portion of the pad 61 can directly contact the second semiconductor layer 23 through the gap 3013, so as to enhance the adhesion between the pad 61 and the second semiconductor layer 23, thereby reducing the probability of electrode falling off, and can directly reduce the area of direct contact between the pad 61 and the first barrier 301, relieve the force of the first barrier 301, and reduce the possibility of the first barrier 301 breaking. In some embodiments, the gap 3013 is an annular structure, and the gap 3013 is specifically located inside the first barrier 301 to separate the first portion 3011 and the second portion 3012. More specifically, the first part 3011 is a circular structure, and the second part 3012 is an annular structure. The annular structure of the second part 3012 surrounds the circular structure of the first part 3011 in the middle, and the two do not contact each other, forming an annular gap 3013.
[0056] In an optional embodiment, the minimum width of the gap 3013 is not less than 5 μm, so as to avoid the gap 3013 being too small, so that the contact area between the pad 61 and the second semiconductor layer 23 is too small, which affects the adhesion of the pad 61 and is prone to electrode drop. In addition, a larger gap 3013 can also indirectly reduce the horizontal projection overlap area between the pad 61 and the first blocking portion 301, thereby improving the force condition. Of course, the minimum width of the gap 3013 cannot be too large, preferably not more than 15 μm, so as to avoid the gap 3013 being too large, which is more likely to be attached with dirt when exposed to air, and the problem of electrode drop still occurs.
[0057] In some embodiments, the second blocking portion 302 is a continuous structure or a discontinuous structure. Preferably, the second blocking portion 302 is formed as a continuous structure, for example, a continuous strip structure, which can prevent the current in the extension strip 62 from directly diffusing into the semiconductor stack 20 (second semiconductor layer 23) below it, thereby increasing the expansibility of the current. The second blocking portion 302 can also be formed as a discontinuous structure, for example, a plurality of block structures, and the plurality of block structures can be rectangular structures, triangular structures, cylindrical structures, etc.
[0058] With regard to the problem that the current blocking layer 30 (first blocking part 301) in the pad 61 region of the existing light-emitting diode 1 is prone to breakage, which leads to electrode drop, through a large amount of analysis and verification, it is finally found that it is affected by the factor of the overlapping area of the first blocking part 301 in the pad 61 region and the horizontal projection of the pad 61. This is because in the process of packaging and wire bonding, a solder ball is usually used to act on and wrap the pad 61, which will generate a large force, which will be transmitted to the transparent conductive layer 40 and the current blocking layer 30 (first blocking part 301) below. Because the material of the current blocking layer 30 is usually silicon dioxide (glass), it is easy to break. If the current blocking layer is broken, the transparent conductive layer 40 will also be broken, resulting in no support structure under the pad 61, and then the defect of electrode drop occurs.
[0059] Specifically, when looking down from the top of the light emitting diode 1, it is assumed that the horizontal projection of the pad 61 and the horizontal projection of the first blocking portion 301 have an overlapping area D ( Figure 3The shaded area shown is the overlapping area D of the two in this embodiment. By verifying that the overlapping area D accounts for 31.71%, 47.54%, 55%, 64%, 71.58%, 79.45%, 79.7%, and 100% of the horizontal projection area of the pad, the NG rates of electrode drop are 4.17%, 5%, 4.17%, 12.5%, 12.5%, 12.5%, 16.67%, and 20.83%, respectively. It can be seen that the larger the horizontal projection overlapping area of the pad 61 and the first blocking portion 301, the greater the force it will be subjected to, and the more likely it is that the current blocking layer 30 will break and the electrode will drop. Of course, it is necessary to ensure a certain horizontal projection overlapping area to avoid the current below the pad 61 from gathering, affecting the current lateral expansion capability, and reducing the probability of the current being vertically injected into the second semiconductor layer 23, thereby ensuring the luminous efficiency of the light-emitting diode 1. In summary, the overlapping area D can be set to account for 20% to 55% of the horizontal projection area of the pad 61. More preferably, the overlapping area D of this embodiment accounts for 20% to 50% of the horizontal projection area of the pad 61, so as to take into account the reliability and luminous efficiency of the light-emitting diode 1. It should be noted that the horizontal projection overlapping area of the pad 61 and the first blocking portion 301 includes the direct contact area and the non-contact area between the two. Example 2
[0060] Reference Figures 4 to 7 , Figure 4 is a structural schematic diagram of another embodiment of the light emitting diode of the present application, Figure 5 yes Figure 4 A partial enlarged schematic diagram of the second electrode in the light emitting diode shown in FIG. Figure 6 is a structural diagram of another embodiment of the light emitting diode of the present application, Figure 7 yes Figure 6 Compared with the light emitting diode of the first embodiment of the present application, the light emitting diode of the present embodiment is different mainly in that the pad 61 has a first feeler 63 which exceeds the edge of the first blocking portion 301 .
[0061] Specifically, the material of the first feeler 63 is consistent with that of the pad 61. By setting the first feeler 63 beyond the edge of the first blocking portion 301, the force acting on the current blocking layer 30 (first blocking portion 301) during the bonding process is dispersed to prevent it from breaking. In an optional embodiment, the pad 61 has a plurality of first feelers 63, which can be symmetrical, arrayed, or irregularly distributed on the edge of the pad 61. By setting a plurality of first feelers 63, the solder ball during the bonding process can be prevented from directly acting on the first blocking portion 301, achieving the effect of dispersing the force. At the same time, the contact area between the pad 61 and the bonding solder ball can be increased, thereby improving the success rate of bonding and improving the problem of non-sticking.
[0062] In some embodiments, the distance between the center of the pad 61 and the end of the first feeler 63 is not less than 5 μm, so as to avoid the shorter path affecting the lateral expansion effect of the current, avoid the current being too concentrated below the pad 61, and reduce the current clustering problem. In an optional embodiment, the width of the first feeler 63 gradually decreases in the direction away from the pad 61, which can ensure that the first feeler 63 can reduce the absorption of the light emitted by the light-emitting diode 1 while dispersing the wire bonding force and avoiding the first blocking portion 301 from breaking, and reduce the production cost.
[0063] Continue to refer to Figure 7 In some embodiments, the pad 61 further has a first depression 64, which can be provided in plurality and is provided at the edge (side) of the pad 61 and is provided at a staggered position with the first feeler 63. By adding the first depression 64, the area of the entire pad 61 can be balanced, and the pad 61 area is prevented from being too large due to the addition of the first feeler 63, which makes the light absorption more serious. At the same time, it is equivalent to partially retracting the pad 61 to ensure that the first blocking part 301 is not completely covered by the solder ball during the wiring process, thereby alleviating the stress of the first blocking part 301 and reducing the probability of the first blocking part 301 being broken, thereby reducing the probability of the transparent conductive layer 40 being broken, thereby avoiding the problem of electrode falling, and improving the reliability of the light-emitting diode 1. The depth of the first depression 64 is preferably 5~10μm.
[0064] It should be noted that the depression depth mentioned in the present application refers to the maximum depth of the depression, which can also be understood as the maximum distance of inward retraction; in addition, the tentacles mentioned in the present application are merely a naming method, and do not necessarily mean that they must be tentacle-shaped, but can also be square, triangular, needle-shaped or other regular or irregular shapes, and the present application does not make any special limitations. Example 3
[0065] Reference Figures 8 to 13 , Figure 8 is a structural diagram of another embodiment of the light emitting diode of the present application, Fig. 9 yes Figure 8 A partial enlarged schematic diagram of the second electrode in the light emitting diode shown in FIG. Fig.10 is a structural diagram of another embodiment of the light emitting diode of the present application, Fig.11 yes Fig.10 A partial enlarged schematic diagram of the second electrode in the light emitting diode shown in FIG. Fig.12 is a structural diagram of another embodiment of the light emitting diode of the present application, Fig.13 yes Fig.12Compared with the light emitting diode of the second embodiment of the present application, the light emitting diode of the present embodiment is different mainly in that the first blocking portion 301 has a second antenna 31 , and the second antenna 31 is located below the first antenna 63 .
[0066] Specifically, the material of the second antenna 31 is consistent with that of the first blocking portion 301. The second antenna 31 is arranged at a position corresponding to the first antenna 63. Specifically, a second antenna 31 is arranged below each first antenna 63 to promote current expansion and improve luminous brightness.
[0067] In some embodiments, the first antenna 63 needs to extend beyond the second antenna 31 to protect the first blocking portion 301 under the second electrode 60 (pad 61) and reduce the probability of electrode drop. In an optional embodiment, the width of the first antenna 63 is not greater than the width of the second antenna 31 to further promote lateral expansion of the current. For details, please refer to Fig. 9 , 11 、13.
[0068] Continue to refer to Fig.13 In some embodiments, the first blocking portion 301 has a second recess 32, and the second recess 32 can be provided in plurality and is provided at the edge (side) of the first blocking portion 301 and is provided at a position staggered with the second antenna 31. By adding the second recess 32, the area of the entire current blocking portion 30 (first blocking portion 301) can be balanced, and the increase in light absorption of the current blocking layer 30 due to the addition of the second antenna 31 can be avoided, thereby ensuring the luminous brightness of the light-emitting diode 1. Preferably, the depth of the second recess 32 is 5-10 μm. Example 4
[0069] This embodiment further provides a light emitting device 7, which includes a light emitting diode 1 provided in any of the above embodiments. The light emitting diode 1 can be arranged on a circuit substrate 8. Fig.14 The light emitting device 7 may be, for example, a white light illuminating device, a backlight display device, a car light, a flash light, a projection light, a stage light, etc. The light emitting device has the characteristics of higher light extraction efficiency and reliability.
[0070] In summary, the light-emitting diode 1 of the present application limits the overlapping area between the horizontal projection of the pad 61 and the horizontal projection of the first blocking portion 301, so that the overlapping area accounts for 20% to 55% of the horizontal projection area of the pad, so as to effectively reduce the probability of the current blocking layer breaking without losing the luminous brightness, thereby improving the abnormality of electrode falling and further improving the reliability of the light-emitting diode.
[0071] The above are only implementation methods of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.
Claims
1. A light emitting diode, characterized in that: include: A semiconductor stack, comprising a first semiconductor layer, an active layer and a second semiconductor layer stacked in sequence; A current blocking layer, located on the second semiconductor layer, the current blocking layer comprising a first blocking portion and a second blocking portion; a transparent conductive layer, covering at least a portion of the upper surface and the side surface of the current blocking layer and a portion of the upper surface of the second semiconductor layer, wherein the transparent conductive layer has a through hole, and the through hole exposes a portion of the upper surface of the first blocking portion; A first electrode, located above the first semiconductor layer and electrically connected to the first semiconductor layer; a second electrode, located above the second semiconductor layer and electrically connected to the second semiconductor layer, the second electrode comprising a pad and at least one extension strip extending from the pad, wherein the pad is arranged corresponding to the first blocking portion, the extension strip is arranged corresponding to the second blocking portion, the pad is in direct contact with the transparent conductive layer, and is in direct contact with the first blocking portion through a through hole; Looking down from above the light-emitting diode, a horizontal projection of the solder pad and a horizontal projection of the first blocking portion have an overlapping area, and the overlapping area accounts for 20% to 55% of the horizontal projection area of the solder pad.
2. The light emitting diode according to claim 1, characterized in that: The overlapping area accounts for 20% to 50% of the horizontal projection area of the pad.
3. The light emitting diode according to claim 1, characterized in that: The pad has a first feeler, and the first feeler exceeds an edge of the first blocking portion.
4. The light emitting diode according to claim 3, characterized in that: The distance between the center of the pad and the end of the first antenna is not less than 5 μm.
5. The light emitting diode according to claim 3, characterized in that: The width of the first antenna gradually decreases in a direction away from the pad.
6. The light emitting diode according to claim 3, characterized in that: The first blocking portion has a second feeler, and the second feeler is located below the first feeler.
7. The light emitting diode according to claim 6, characterized in that: The first antenna extends beyond the second antenna.
8. The light emitting diode according to claim 6, characterized in that: The width of the first antenna is not greater than the width of the second antenna.
9. The light emitting diode according to claim 1, characterized in that: The first blocking portion is a discontinuous structure.
10. The light emitting diode according to claim 1, characterized in that: The first blocking portion includes a first portion and a second portion, the second portion surrounds the first portion, and a gap is formed between the first portion and the second portion, wherein the gap exposes a portion of an upper surface of the second semiconductor layer.
11. The light emitting diode according to claim 10, characterized in that: The gap is annular, and the minimum width of the gap is not less than 5 μm.
12. The light emitting diode according to claim 1, characterized in that: The edge of the pad has a first recess.
13. The light emitting diode according to claim 1, characterized in that: The edge of the first blocking portion has a second recess.
14. The light emitting diode according to claim 1, characterized in that: The second blocking portion is a continuous structure or a discontinuous structure.
15. A light emitting device, characterized in that The light emitting diode comprises the light emitting diode according to any one of claims 1 to 14.