Light emitting diode packaging structure and manufacturing method thereof
By increasing the thickness of the first gold layer and the coverage of the second gold layer in the light emitting diode packaging structure, and setting the nickel layer and palladium layer in appropriate locations, the problems of conductive line exposure and insufficient gold layer thickness are solved, and the reliability of the packaging structure and the bonding power of the gold-gold connection are improved.
Patent Information
- Application Number
- CN202311239178.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-25
- Publication Date
- 2025-03-28
AI Technical Summary
In the design, the existing light emitting diode packaging structure has conductive lines exposed to the outside world, which is prone to oxidation and corrosion, and the thickness of the gold layer is insufficient when gold-gold is connected, resulting in a decrease in the reliability of the packaging structure.
A light emitting diode packaging structure including a substrate, a conductive structure, a first gold layer, a second gold layer, a light emitting diode chip and a packaging layer are designed. The thickness of the first gold layer is greater than 1 micron, the second gold layer completely covers the second conductive structure, and a nickel layer and palladium layer are provided in appropriate locations to prevent atomic migration and diffusion.
By increasing the thickness of the first gold layer and the coverage of the second gold layer, the reliability of the light emitting diode packaging structure is enhanced, the conductive structure is prevented from oxidation and corrosion, and the bonding force of the gold-gold connection is improved.