Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device, a preparation method thereof and a display device. According to the preparation method of the photoelectric device, the first electron transport layer is prepared on the light-emitting layer, and then the second electron transport layer is prepared on the first electron transport layer through the arc ion plating method; the electronic function layer comprising the first electron transport layer and the second electron transport layer which are stacked is prepared by using two different methods, so that the interface between the electronic function layer and the second electrode can be optimized, the interface state is stabilized, positive aging is reduced, the stability of the photoelectric device is improved, and the photoelectric device is suitable for large-scale production. Meanwhile, damage to materials of other film layers in the preparation process is avoided.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an optoelectronic device and a method for preparing the same, and a display device. Background Art

[0002] Currently, widely used optoelectronic devices include organic light-emitting devices (OLEDs) and quantum dot light-emitting devices (QLEDs). The structure of traditional OLED and QLED devices mainly includes a first electrode, a hole functional layer, a light-emitting layer, an electron functional layer and a second electrode. Under the action of the electric field, the holes generated by the first electrode of the optoelectronic device and the electrons generated by the second electrode move and are injected into the hole transport layer and the electron transport layer respectively, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules and finally producing visible light.

[0003] The luminous performance of optoelectronic devices such as OLED and QLED has reached the commercial requirements, but there are still some problems in the research and development and mass production process. For example, although the positive aging-related characteristics of optoelectronic devices have significantly improved the performance of optoelectronic devices, they will affect the stability of optoelectronic devices and are not conducive to large-scale mass production and application of optoelectronic devices.

[0004] Therefore, how to solve the negative impact of positive aging has become one of the problems that need to be solved in the large-scale production of optoelectronic devices. Summary of the invention

[0005] In view of this, the present application provides an optoelectronic device and a method for preparing the same, and a display device, aiming to improve the positive aging problem of the optoelectronic device.

[0006] The embodiment of the present application is implemented by providing a method for preparing a photoelectric device, including: providing a prefabricated device, wherein the prefabricated device includes a first electrode; preparing a first electron transport layer on the first electrode; performing a first arc ion plating on the first electron transport layer to prepare a second electron transport layer; and preparing a second electrode on the second electron transport layer.

[0007] Correspondingly, an embodiment of the present application also provides a photoelectric device, which is manufactured by the above-mentioned method for manufacturing a photoelectric device.

[0008] Correspondingly, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device.

[0009] The preparation method of the optoelectronic device of the present application first prepares the first electron transport layer on the light-emitting layer, and then prepares the second electron transport layer on the first electron transport layer by arc ion plating. By using two different preparation methods to obtain an electronic functional layer including the stacked first electron transport layer and the second electron transport layer, the interface between the electronic functional layer and the second electrode can be optimized, the interface state can be stabilized, positive aging can be reduced and the stability of the optoelectronic device can be improved, while avoiding damage to the light-emitting layer during the preparation process. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0011] Figure 1 It is a schematic flow chart of an embodiment of a method for preparing a photoelectric device provided in the present application;

[0012] Figure 2 It is a schematic structural diagram of an embodiment of a photoelectric device provided in the present application. DETAILED DESCRIPTION

[0013] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words such as "upper" and "lower" used are specifically the directions of the drawings in the accompanying drawings. In addition, in the description of the present application, the term "including" means "including but not limited to". Various embodiments of the present invention may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and simplicity, and should not be understood as a rigid limitation on the scope of the present invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, description of a range from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the stated range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited numeral (fractional or integral) within the stated range.

[0014] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0015] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0016] It is currently found that positive aging of optoelectronic devices such as QLEDs is usually related to the interface state between the electronic functional layer and the electrode. For example, the instability of the electronic functional layer and the slow diffusion of the electrode material into the electronic functional layer can lead to positive aging. Based on this, the present application provides a method for preparing an optoelectronic device, which is as follows:

[0017] See also Figure 1 , Figure 1 1 is a flow chart of an embodiment of a method for preparing a photoelectric device provided in the present application, comprising the following steps:

[0018] Step S11: providing a prefabricated device, wherein the prefabricated device includes a first electrode;

[0019] Step S12: preparing a first electron transport layer on the first electrode;

[0020] Step S13: performing a first arc ion plating on the first electron transport layer to prepare a second electron transport layer;

[0021] Step S14: preparing a second electrode on the second electron transport layer.

[0022] In this embodiment, the first electron transport layer is first prepared, and then the second electron transport layer is prepared on the first electron transport layer by arc ion plating. By using two different preparation methods, an electronic functional layer including the stacked first electron transport layer and the second electron transport layer is obtained. On the one hand, the interface between the electronic functional layer and the second electrode can be optimized, the interface state can be stabilized, positive aging can be reduced and the stability of the photoelectric device can be improved. On the other hand, a compact, highly crystalline and low-surface-roughness electronic functional layer can be formed by arc ion plating, thereby improving the optical, electrical and mechanical properties of the electronic functional layer. It can also avoid damage to materials of other film layers, such as the light-emitting layer, during the preparation process, thereby improving the life and efficiency of the device.

[0023] In addition, the first arc ion plating can improve the flexibility, stress resistance and strain resistance of the optoelectronic device, which is beneficial to the application of the optoelectronic device in the field of flexible electronics.

[0024] In the step S11:

[0025] In one embodiment, the first electrode is selected from a metal electrode, a carbon electrode, a doped or undoped metal oxide electrode and a composite electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS and ZnS / Al / ZnS. Here, “ / ” represents a stacked structure. For example, the composite electrode AZO / Ag / AZO represents an electrode with a composite structure of three stacked layers consisting of an AZO layer, an Ag layer and an AZO layer.

[0026] The thickness of the first electrode may be 50-110 nm, such as 50-80 nm, 80-100 nm, 100-110 nm, 30-60 nm, 30-40 nm, 40-50 nm, 50-60 nm, etc.

[0027] In one embodiment, the prefabricated device further comprises a light-emitting layer, wherein the light-emitting layer is disposed between the first electrode and the first electron transport layer, and a material of the light-emitting layer may be selected from an organic light-emitting material or a quantum dot light-emitting material;

[0028] The organic light-emitting material is selected from at least one of diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives or fluorene derivatives, TBPe fluorescent materials emitting blue light, TTPA fluorescent materials emitting green light, TBRb fluorescent materials emitting orange light, and DBP fluorescent materials emitting red light;

[0029] The quantum dot luminescent material is selected from at least one of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials, the single structure quantum dots are selected from at least one of II-VI compounds, IV-VI compounds, III-V compounds and I-III-VI compounds, the II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZ At least one of CdZnS, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound is selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbT e, SnPbSSe, SnPbSeTe, SnPbSTe, and the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, Ga At least one of InNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; the core of the quantum dots of the core-shell structure is selected from any one of the above-mentioned single-structure quantum dots, and the shell material of the quantum dots of the core-shell structure is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS and ZnS;

[0030] The perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of .

[0031] When n = 2, the inorganic metal halide octahedron MX6 4- The metal cation M is located at the center of the halogen octahedron, and the organic amine cation B fills the gap between the octahedrons to form an infinitely extended three-dimensional structure. When n>2, the inorganic metal halide octahedron MX6 connected by the top-sharing method 4- It extends in two dimensions to form a layered structure, with an organic amine cation bilayer (protonated monoamine) or an organic amine cation monolayer (protonated diamine) inserted between the layers, and the organic layer and the inorganic layer overlap to form a stable two-dimensional layered structure.

[0032] In one embodiment, the material of the light-emitting layer is selected from quantum dot light-emitting material, and the quantum dot light-emitting material is a heat-sensitive material. By using the method for preparing the optoelectronic device provided in the present application, a film layer is prepared in a low-temperature range on the light-emitting layer, which can reduce damage to the material of the light-emitting layer, thereby improving the lifespan and luminescence performance of the optoelectronic device.

[0033] In one embodiment, the thickness of the light-emitting layer may be 30-50 nm, specifically 30-40 nm, 40-50 nm, etc.

[0034] In one embodiment, the prefabricated device further includes a hole functional layer, and the hole functional layer is disposed between the first electrode and the light-emitting layer.

[0035] Specifically, the hole functional layer includes at least one of a hole injection layer and a hole transport layer, wherein the hole injection layer is disposed close to the first electrode, and the hole transport layer is disposed close to the light emitting layer.

[0036] The material of the hole transport layer can be selected from organic materials having hole transport ability, and the material of the hole transport layer includes arylamine, polyaniline, polypyrrole, polyphenylene vinylene and its derivatives, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped or undoped NiO, M oO3, WO3, V2O5, CrO3, CuO, MoS2, MoSe2, WS3, WSe3, CuS, CuSCN; wherein the aromatic amine is selected from 4,4'-bis(9-carbazole)biphenyl, poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, poly(9,9- dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4',4"-tri(carbazol-9-yl)triphenylamine, 4,4',4"-tri(N-carbazolyl)-triphenylamine, 4,4',4"-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, One or more of (1-naphthyl)-1,1'-biphenyl-4,4'-diamine, Spiro-NPB, Spiro-TPD, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, and Spiro-NPB; the polyphenylene vinylene and its derivatives are selected from one or more of poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene].

[0037] In one embodiment, the thickness of the hole transport layer may be 50-100 nm, such as 50-60 nm, 60-80 nm, 80-100 nm, etc.

[0038] In one embodiment, the material of the hole injection layer can be selected from materials with hole injection capability, including but not limited to one or more of PEDOT:PSS, MCC, CuPc, F4-TCNQ, HATCN, doped or undoped NiO, V2O5, CrO3, CuO, CuS, MoO3, MoS2, MoSe2, WO3, WS2, WSe2 and CuSCN. PEDOT:PSS is a high molecular polymer, and its Chinese name is poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonic acid).

[0039] In one embodiment, the thickness of the hole injection layer may be 50-100 nm, such as 50-60 nm, 60-80 nm, 80-100 nm, etc.

[0040] In step S12:

[0041] In one embodiment, the preparing of the first electron transport layer on the light-emitting layer specifically includes the following steps: forming a first electron transport solid film on the light-emitting layer by a solution method, and performing a first infrared irradiation treatment on the first electron transport solid film to obtain the first electron transport layer.

[0042] In this embodiment, the first electron transport solid film is subjected to a first infrared radiation treatment for infrared annealing. By utilizing the low penetration of infrared light, only the surface film is annealed, thereby eliminating the lattice defects in the first electron transport layer while avoiding overall heating to damage the existing light-emitting layer in the prefabricated device. That is, by the first infrared radiation treatment, the film quality of the first electron transport layer is improved, and when the second electron transport layer is prepared on the first electron transport layer by arc ion plating, the stress between the plating layer (second electron transport layer) and the substrate (first electron transport layer) and the defects of the contact surface can be reduced, and better protection can be provided for the light-emitting layer (such as quantum dot light-emitting layer, etc.).

[0043] Specifically, the parameters of the first infrared radiation treatment may be as follows:

[0044] The diameter of the laser for irradiation treatment is 2 to 10 mm, specifically 2 to 3 mm, 2 to 10 mm, 3 to 5 mm, 5 to 8 mm, 8 to 10 mm, etc. The wavelength of the light used for infrared irradiation is 1000 to 1064 nm. The pulse width of the infrared irradiation is 100 to 120 fs, specifically 100 to 115 fs, 105 to 115 fs, 110 to 115 fs, etc. The repetition frequency of the infrared irradiation is 1 to 1.5 kHz, specifically 1 to 1.4 kHz, 1.2 to 1.4 kHz, 1.2 to 1.3 kHz, etc. The beam quality factor of the light used for infrared irradiation is 1 to 1.2, specifically 1 to 1.18, 1.05 to 1.18, 1.05 to 1.15, 1.08 to 1.15, 1.08 to 1.10, etc. The infrared irradiation treatment time is 20 to 60 seconds, specifically 20 to 30 seconds, 30 to 40 seconds, 40 to 50 seconds, 50 to 60 seconds, etc.

[0045] In one embodiment, the forming of the first electron transport solid film on the light-emitting layer by a solution method includes: providing a first solution, wherein the first solution includes a first electron transport material and a first solvent; then setting the first solution on the light-emitting layer, and drying it to obtain the first electron transport solid film.

[0046] Wherein, the first electron transport material is selected from doped inorganic nanocrystals or undoped inorganic nanocrystals; wherein, the undoped inorganic nanocrystals are selected from one or more of ZnO, TiO2, SnO2, Ta2O3, ZrO2, NiO, Al2O3, GaO, Ga2O3, ZnS, ZnSe, CdS, InP, GaP, BaTiO3, Cs2CO3, Rb2CO3, RbBr, LiF, MgP, MgF2; the doped inorganic nanocrystals include the undoped inorganic nanocrystals and doping elements, and the doping elements are selected from one or more of Mg, Ca, Li, Ga, Al, Co, Mn, Zr, W, Ti, and Y.

[0047] In one embodiment, the first electron transport material is selected from one or more of ZnO, TiO2, SnO2, Ta2O3, ZrO2, NiO, TiLiO, ZnAlO, ZnMgO, ZnSnO, ZnLiO, and InSnO.

[0048] In a specific embodiment, the first electron transport material is selected from one or more of ZnO, ZnAlO, ZnMgO, ZnSnO, ZnLiO and the like.

[0049] In one embodiment, the average particle size of the first electron transport material is 2 to 15 nm, specifically 2 to 13 nm, 5 to 13 nm, 5 to 10 nm, 5 to 8 nm, etc.

[0050] The first solvent may include one or more of methanol, ethanol, isopropanol, butanol, acetonitrile, N,N-dimethylformamide, dimethyl sulfoxide, acetone, and the like.

[0051] In one embodiment, the concentration of the first electron transport material in the first solution is 10-50 mg / mL, specifically 10-40 mg / mL, 20-40 mg / mL, 20-30 mg / mL, etc.

[0052] In one embodiment, the thickness of the first electron transport layer is 10-80 nm, specifically 10-70 nm, 20-70 nm, 20-60 nm, 30-60 nm, 30-50 nm, 40-50 nm, etc.

[0053] In one embodiment, the thickness of the second electron transport layer is 10-80 nm, specifically 10-70 nm, 20-70 nm, 20-60 nm, 30-60 nm, 30-50 nm, 40-50 nm, etc.

[0054] In one embodiment, the thickness ratio of the first electron transport layer to the second electron transport layer is (4-6):5, and can be specifically (4-5.5):5, (4.5-5.5):5, (4.5-5):5, etc.

[0055] In one embodiment, the sum of the thicknesses of the first electron transport layer and the second electron transport layer is 20-160 nm, specifically 25-160 nm, 25-150 nm, 50-140 nm, 75-140 nm, 75-120 nm, 100-120 nm, etc.

[0056] In one embodiment, the drying process may be heating drying, the heating drying temperature is 60 to 150° C., and the time is 1 to 30 minutes. The drying process may be vacuum drying, and the vacuum drying pressure is 10 -1 ~10 -2 Pa, the temperature is 0-30°C, for example, it can be at room temperature of about 25°C.

[0057] In step S13:

[0058] The conditions of the first arc ion plating include arc voltage, arc current, deposition time, deposition temperature, bias voltage, base pressure, background gas, etc.

[0059] The arc voltage affects the ion energy generated during the discharge process and also affects the effect of ion plating. In this embodiment, the arc voltage ranges from 20V to 50V, and can be specifically 20 to 45V, 25 to 45V, 25 to 40V, 30 to 40V, 30 to 35V, etc.

[0060] The arc current affects the number and intensity of generated ions. Selecting an appropriate arc current can provide a stable ion flow for thin film deposition. In this embodiment, the arc current ranges from 50 to 100 A, specifically 50 to 90 A, 60 to 90 A, 60 to 80 A, 70 to 80 A, etc.

[0061] During the first arc ion plating process, the deposition time (i.e.) directly affects the thickness of the film layer. By controlling the deposition time, the film layer of target thickness can be obtained. Specifically, the deposition time can be 20s to 600s. By setting the corresponding deposition time, a second electron transport layer with the target thickness can be obtained. Specifically, the thickness of the second electron transport layer can be 10 to 80nm.

[0062] The temperature of the first arc ion plating is the deposition temperature of the substrate during the first arc ion plating process, which has a significant effect on the structure and performance of the film. In this embodiment, the deposition temperature may be between 25°C (room temperature) and 80°C. The above-mentioned deposition temperature range has a good deposition effect, and can deposit a second electron transport layer with good structure and performance, and can also avoid the possibility that higher temperatures may cause damage to the prefabricated device comprising the first electron transport layer and the light-emitting layer, thereby avoiding affecting the performance of the photoelectric device finally obtained. Specifically, the deposition temperature may be 25°C to 60°C, 25°C to 40°C, 30°C to 40°C, etc.

[0063] The first arc ion plating process needs to be carried out under high vacuum conditions, generally with a base pressure of 10 -3 ~10 -5 Pa range. The background gas mainly uses argon (Ar), nitrogen (N2) or mixed gas (such as Ar+N2). The pressure of the background gas can be set according to specific needs. Usually the working pressure range is 1×10 -2 ~1×10 -1 Pa.

[0064] During the first arc ion plating process, a bias voltage may be applied to the substrate or target material to increase the energy of ions on the substrate surface. The bias voltage may be in the range of greater than 0 and less than or equal to 50V, specifically greater than 0V and less than or equal to 10V, 10 to 20V, 20 to 30V, 30 to 40V, 40 to 50V, etc.

[0065] In one embodiment, the material of the second electron transport layer includes doped inorganic nanocrystals or undoped inorganic nanocrystals; wherein the undoped inorganic nanocrystals are selected from one or more of ZnO, TiO2, SnO2, Ta2O3, ZrO2, NiO, Al2O3, GaO, Ga2O3, ZnS, ZnSe, CdS, InP, GaP, BaTiO3, Cs2CO3, Rb2CO3, RbBr, LiF, MgP, MgF2; the doped inorganic nanocrystals include the undoped inorganic nanocrystals and doping elements, and the doping elements are selected from one or more of Mg, Ca, Li, Ga, Al, Co, Mn, Zr, W, Ti, and Y.

[0066] In one embodiment, the material of the second electron transport layer includes doped inorganic nanocrystals or undoped inorganic nanocrystals; wherein the undoped inorganic nanocrystals are selected from one or more of ZnO, TiO2, SnO2, Ta2O3, ZrO2, NiO, Al2O3, GaO, and Ga2O3; the doped inorganic nanocrystals include the undoped inorganic nanocrystals and doping elements, and the doping elements are selected from one or more of Mg, Ca, Li, Ga, Al, Co, Mn, Zr, W, Ti, and Y.

[0067] It can be understood that the target material used in the first arc ion plating can be set accordingly according to the material of the second electron transport layer, which is not limited here.

[0068] In one specific embodiment, the material of the second electron transport layer is selected from ZnO, and its target material can be a ZnO target material, a pure Zn target material, etc. In another specific embodiment, the material of the second electron transport layer is doped ZnO, and its target material can be a ZnO-Al2O3 composite target material, a ZnO-Ag composite target material, a ZnO-Ni composite target material, etc.

[0069] In step S14:

[0070] In one embodiment, the second electrode can be selected from a metal electrode, a carbon electrode, a doped or undoped metal oxide electrode and a composite electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS and ZnS / Al / ZnS. Here, “ / ” represents a stacked structure. For example, the composite electrode AZO / Ag / AZO represents an electrode with a composite structure of three stacked layers consisting of an AZO layer, an Ag layer and an AZO layer.

[0071] The thickness of the second electrode may be 50-110 nm, such as 50-80 nm, 80-100 nm, 100-110 nm, 30-60 nm, 30-40 nm, 40-50 nm, 50-60 nm, etc.

[0072] In one embodiment, the optoelectronic device is a top-emitting device, the second electrode is a top electrode, and the visible light transmittance of the top electrode is greater than or equal to 90%. The top electrode is located on the light-emitting side of the optoelectronic device, and its visible light transmittance is greater than or equal to 90%, which can improve the light transmittance of the optoelectronic device and improve the luminous properties such as brightness.

[0073] Furthermore, in a specific embodiment, when the top electrode is the metal electrode or the composite electrode, the thickness of the metal electrode should not exceed 35 nm. In the composite electrode, the thickness of the metal layer sandwiched between two transparent metal oxide layers should not exceed 35 nm, thereby improving the transparency and light transmittance of the top electrode.

[0074] It is understandable that for the film layers whose preparation methods are not specifically specified in this application, such as the first electrode, hole injection layer, hole transport layer, light-emitting layer, second electrode and other film layers, conventional techniques in the art can be used for preparation, such as chemical methods or physical methods. Among them, chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, first electrode oxidation, electrolytic deposition, and coprecipitation. Physical methods include physical plating and solution methods, among which physical plating methods include: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods can be spin coating, printing, inkjet printing, blade coating, printing, dip-pull, immersion, spraying, roll coating, casting, slit coating, and strip coating, etc.

[0075] In one embodiment, the preparing the second electrode on the second electron transport layer comprises the following specific steps: performing a second arc ion plating on the second electron transport layer to prepare the second electrode.

[0076] The process parameters of the second arc ion plating may refer to the process parameters of the first arc ion plating, which will not be described in detail here.

[0077] Specifically, the target material used in the second arc ion plating can be set accordingly according to the material of the second electrode, which is not limited here.

[0078] In this embodiment, the second arc ion plating is performed on the second electron transport layer prepared by the first arc ion plating to prepare the second electrode. On the one hand, the interface state between the second electrode and the second electron transport layer can be further stabilized, positive aging can be reduced, and the adhesion between the two layers can be improved, which can significantly improve the stability of the photoelectric device, such as storage stability. On the other hand, the second arc ion plating can accelerate the diffusion of the second electrode material to the electronic functional layer, improve the process of positive aging, reduce the positive aging of the prepared photoelectric device and affect the stability of the photoelectric device, and improve the feasibility of large-scale mass production of the photoelectric device.

[0079] In addition, in this embodiment, the second electron transport layer and the second electrode are prepared by arc ion plating, which can improve the flexibility, stress resistance and strain resistance of the optoelectronic device, is beneficial to the application of the optoelectronic device in flexible electronic devices, and improves the wide application of the optoelectronic device.

[0080] In another embodiment, the preparing the second electrode on the second electron transport layer includes: forming a first sub-electrode solid film on the second electron transport layer, performing a second infrared irradiation treatment on the first sub-electrode solid film to obtain a first sub-electrode layer; performing the second arc ion plating on the first sub-electrode layer to form the second sub-electrode layer; wherein the second electrode includes the first sub-electrode layer and the second sub-electrode layer.

[0081] The conditions for the second infrared radiation treatment may refer to the conditions for the first infrared radiation treatment in step S12, and will not be described in detail here.

[0082] In this embodiment, the second electrode of the stacked electrode is set and infrared annealing is assisted by infrared radiation treatment, which can make the diffusion of metal ions in the second electron transport layer and the first electron transport layer more controllable. Specifically, the first sub-electrode layer is in contact with the second electron transport layer, and can provide metal ions that diffuse to the second electron transport layer, and the first sub-electrode layer is subjected to infrared radiation treatment for infrared annealing, and the low penetration of infrared light is used to anneal only the surface layer, so that its surface layer forms a quenching effect, forming a more stable surface layer; because the surface layer of the first sub-electrode layer close to the second sub-electrode layer is relatively stable, it can also be used as a protective isolation layer. When the second sub-electrode layer realizes the electron injection function, the metal ions in the second sub-electrode layer are prevented from entering the second electron transport layer, and the metal ions are prevented from affecting the performance stability of the second electron transport layer, which plays a role in improving the stability of the optoelectronic device.

[0083] Specifically, the materials of the first sub-electrode layer and the second sub-electrode layer may refer to the related description of the material of the second electrode, which will not be described in detail here.

[0084] In one embodiment, the thickness ratio of the first sub-electrode layer to the second sub-electrode layer is (0.3-0.7):1, specifically (0.3-0.6):1, (0.4-0.6):1, (0.4-0.5):1, etc. The thickness ratio can realize a laminated second electrode structure with good electron injection and stability, and improve the stability of the optoelectronic device. Specifically, the sum of the thickness of the first sub-electrode layer and the second sub-electrode layer is the thickness of the second electrode.

[0085] Furthermore, the first sub-electrode layer and / or the second sub-electrode layer can be prepared by arc ion plating.

[0086] The present application provides a photoelectric device, which is prepared by the photoelectric device preparation method provided by the present application. Figure 2 , Figure 2The optoelectronic device 100 includes a first electrode 10 and a second electrode 20 disposed opposite to each other, and a light-emitting layer 30 disposed between the first electrode 10 and the second electrode 20 , and an electronic functional layer 40 disposed between the second electrode 20 and the light-emitting layer 30 .

[0087] The electronic functional layer 40 includes a first electron transport layer 41 and a second electron transport layer 42 . The first electron transport layer 41 is disposed close to the light emitting layer 30 , and the second electron transport layer 42 is disposed close to the second electrode 20 .

[0088] The optoelectronic device of this embodiment is prepared by the method for preparing an optoelectronic device provided in this application.

[0089] The first electron transport layer 41 is prepared by a solution method, and the second electron transport layer 42 is prepared by an arc ion plating method.

[0090] Furthermore, the second electrode 20 can also be prepared by arc ion plating.

[0091] In another embodiment, the second electrode 20 may be a two-layer structure (not shown), wherein a layer away from the electronic functional layer 40 may be prepared by an arc ion plating method, and a layer close to the electronic functional layer 40 may be prepared by a conventional method. Furthermore, the layer close to the electronic functional layer 40 is prepared by a conventional method and subjected to external irradiation treatment.

[0092] In one embodiment, the optoelectronic device 100 further includes a hole functional layer 50 , and the hole functional layer 50 is disposed between the first electrode 10 and the light emitting layer 30 .

[0093] Furthermore, the hole functional layer 50 includes one or more layers of a hole transport layer 51 and a hole injection layer 52. The hole transport layer 51 is disposed close to the light emitting layer 30, and the hole transport layer 51 is disposed close to the first electrode 10.

[0094] It can be understood that the first electrode 10, the second electrode 20, the light-emitting layer 30, the electron functional layer 40, the first electron transport layer 41, the second electron transport layer 42, the hole functional layer 50, the hole transport layer 51, the hole injection layer 52, etc. can all refer to the relevant description in the preparation method of the optoelectronic device, and will not be repeated here.

[0095] Specifically, the optoelectronic device 100 further includes a substrate (not shown), which is disposed on the side of the first electrode 10 away from the light-emitting layer 30. The substrate may be a rigid substrate or a flexible substrate. The rigid substrate may be a ceramic material or various glass materials. The flexible substrate may be a substrate formed of materials such as polyimide film (PI) and its derivatives, polyethylene naphthalate (PEN), phosphoenolpyruvic acid (PEP) or diphenylene ether resin.

[0096] It can be understood that, in addition to the above-mentioned functional layers, the optoelectronic device 100 may also be provided with some functional layers conventionally used in optoelectronic devices that help improve the performance of the optoelectronic device, such as an electron blocking layer, a hole blocking layer, etc.

[0097] It can be understood that the material and thickness of each layer of the optoelectronic device 100 can be set and adjusted accordingly according to the light emitting requirements of the optoelectronic device 100 .

[0098] It is understandable that the optoelectronic device 100 further includes an encapsulation layer (not shown), which can be prepared according to an encapsulation method known in the art. The encapsulation can be machine encapsulation or manual encapsulation, and the concentration of oxygen and water in the environment of the encapsulation step is less than 0.1 ppm to ensure the stability of the optoelectronic device.

[0099] The present application also relates to a display device, which includes the optoelectronic device provided in the present application. Specifically, the display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptop computers, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, wherein the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0100] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0101] Example 1

[0102] This embodiment 1 provides a quantum dot light emitting diode and a preparation method thereof. The quantum dot light emitting diode is a top-emitting structure, and the preparation method specifically includes the following steps.

[0103] Step 1: Spin coating PEDOT:PSS material on an ITO substrate (the thickness of the ITO layer is 50 nm), wherein the spin coating speed is 5000 r / min, the time is 30 seconds, and then heated at 150° C. for 15 minutes to obtain a hole injection layer with a thickness of 50 nm;

[0104] Step 2: Spin-coat the hole injection layer with a TFB material having a concentration of 8 mg / mL at a spin-coating speed of 3000 r / min for 30 seconds, and then heat at 120° C. for 10 minutes to obtain a hole transport layer having a thickness of 30 nm;

[0105] Step 3: Spin-coat the CdZnSe quantum material with a concentration of 20 mg / ml on the hole transport layer, wherein the spin-coating speed is 2000 rpm, the spin-coating time is 30 s, and then heat on a heating plate at 80° C. for 10 min to obtain a light-emitting layer with a thickness of 20 nm;

[0106] Step 4: Spin-coat ZnO ethanol solution (concentration 20 mg / mL) at 5500 rpm for 30 seconds, followed by 10 -2 MPa environment for 15 min to obtain a first electron transport layer with a thickness of 35 nm;

[0107] Step 5: Use arc ion plating process to prepare the environment with a mixed gas of N2 and Ar, and the working gas pressure is 1×10 - 2 Pa, arc voltage of 30 V, arc current of 70 A, bias voltage of 10 V, room temperature deposition, deposition time of 30 seconds, to obtain a second electron transport layer with a thickness of 40 nm;

[0108] Step 6: Through thermal evaporation, the vacuum degree is not higher than 3×10 -4 Pa, evaporating Ag on the second electron transport layer at a rate of 1 angstrom / second for 200 seconds to obtain a second electrode with a thickness of 50 nm;

[0109] Step 7: Encapsulate the device with epoxy resin.

[0110] Example 2

[0111] This embodiment is basically the same as the embodiment 1, except that in step 6, an Ag electrode with a thickness of 20 nm is prepared by arc ion plating, wherein the preparation environment is a mixed gas of N2 and Ar, and the working gas pressure is 1×10 -2 Pa, arc voltage is 30V, arc current is 70A, bias voltage is 10V, deposition is performed at room temperature, and deposition time is 20 seconds.

[0112] Example 3

[0113] This embodiment is basically the same as Embodiment 1, and the only difference is that in step 5, the deposition temperature of the arc ion plating process is 60°C.

[0114] Example 4

[0115] This embodiment is basically the same as Embodiment 1, and the only difference is that in step 5, the deposition temperature of the arc ion plating process is 80°C.

[0116] Example 5

[0117] This embodiment is basically the same as Embodiment 1, with the only difference being that in step 4, the first electron transport layer is subjected to infrared irradiation treatment, the diameter of the infrared laser is 3 mm, the wavelength is 1064 nm, the pulse width is 100 fs, the repetition frequency is 1.2 kHz, the beam quality factor is 1, and the treatment time is 40 s.

[0118] Example 6

[0119] This embodiment is basically the same as the embodiment 1, except that: in step 6, thermal evaporation is first performed on the second electron transport layer in a vacuum of not more than 3×10 -4 Pa, prepare an Ag layer as the first sub-electrode layer, and perform infrared irradiation treatment on the first sub-electrode layer, and the parameters of the infrared irradiation treatment are the same as those in Example 5. Then, prepare an Ag layer as the second sub-electrode layer on the first sub-electrode layer by arc ion plating, that is, form a second electrode including the first sub-electrode layer and the second sub-electrode layer, wherein the total thickness of the first sub-electrode layer and the second sub-electrode layer is 50nm, and the thickness ratio of the first sub-electrode layer to the second sub-electrode layer is 0.5:1.

[0120] Comparative Example 1

[0121] This comparative example is substantially the same as Example 1, except that only step 4 is performed and step 5 is not performed, that is, the device only includes the first electron transport layer (with a thickness of 75 nm) but not the second electron transport layer.

[0122] Comparative Example 2

[0123] This comparative example is basically the same as comparative example 1, except that in step 6, an Ag electrode with a thickness of 50 nm is prepared by arc ion plating, wherein the preparation environment is a mixed gas of N2 and Ar, and the working gas pressure is 1×10 -2 Pa, arc voltage is 50V, arc current is 80A, bias voltage is 10V, deposition is performed at room temperature, and deposition time is 20 seconds.

[0124] Comparative Example 3

[0125] This comparative example is substantially the same as Example 1, except that step 4 is not performed, and a second electron transport layer (with a thickness of 75 nm) is prepared according to the method of step 5.

[0126] Test 1

[0127] Two batches of quantum dot light-emitting diodes were prepared according to the preparation methods of Examples 1-6 and Comparative Examples 1-3. One batch was tested for lifespan T95@1knit on the day of preparation, and the other batch was tested for lifespan T95@1knit after being stored in an atmospheric environment at room temperature for 100 days. The results are shown in Table 1. T95_1knit is the time taken for the brightness of the device to decay from 100% to 95% at a brightness of 1000nit, which is specifically calculated based on the measured lifespan value.

[0128] Test 2

[0129] The quantum dot light-emitting diodes of Examples 1-6 and Comparative Examples 1 and 3 were driven at a constant current of 2 mA to obtain current efficiency-time curves, and the ratio of initial efficiency to maximum efficiency, i.e., initial CE / maximum CE, was calculated, as shown in Table 1. The larger the ratio, the greater the degree of positive aging.

[0130] Test 3

[0131] The quantum dot light-emitting diodes of Examples 1-6 and Comparative Examples 1 and 3 were tested for stress resistance and strain resistance. The data are shown in Table 1.

[0132] Table 1

[0133]

[0134] It can be seen from Table 1 that, compared with Comparative Examples 1-3, the quantum dot light-emitting diodes of Examples 1-6 have a larger T95_1k nit corresponding to the life test on the day of preparation, indicating that the optoelectronic device prepared by the preparation method of the optoelectronic device of the present application has a better life.

[0135] Compared with comparative examples 1-3, the difference between the lifetime T95_1knit of the quantum dot light-emitting diodes of embodiments 1-6 after 100 days of storage and the lifetime T95_1k nit on the day of preparation is relatively small, indicating that the optoelectronic device prepared by the preparation method of the optoelectronic device of the present application has good storage stability.

[0136] Compared with comparative examples 1-3, the quantum dot light-emitting diodes of embodiments 1-6 have a larger initial CE / maximum CE, indicating that the greater the degree of positive aging, the smaller the positive aging will be during subsequent storage and application, thereby improving the storage and use stability of the optoelectronic device.

[0137] Compared with Comparative Example 1, the quantum dot light-emitting diodes of Examples 1-6 have better stress resistance and strain resistance. The optoelectronic devices prepared by the method for preparing optoelectronic devices of the present application can be applied to flexible electronic devices.

[0138] The failure of the device in Comparative Example 2 may be due to the fact that the electrode was prepared by arc ion plating on the electron transport layer prepared by the solution method, which directly damaged the electron transport layer and caused the device failure.

[0139] The optoelectronic devices and their preparation methods, and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for preparing a photoelectric device, characterized in that: include: Providing a prefabricated device, the prefabricated device comprising a first electrode; preparing a first electron transport layer on the first electrode; Performing a first arc ion plating on the first electron transport layer to prepare a second electron transport layer; A second electrode is prepared on the second electron transport layer.

2. The preparation method according to claim 1, characterized in that: The step of preparing a first electron transport layer on the first electrode comprises: A first electron transport solid film is formed on the first electrode, and the first electron transport solid film is subjected to a first infrared radiation treatment to obtain the first electron transport layer.

3. The preparation method according to claim 1 or 2, characterized in that: The step of preparing a second electrode on the second electron transport layer comprises: A second arc ion plating is performed on the second electron transport layer to prepare the second electrode.

4. The preparation method according to claim 3, characterized in that: The step of preparing a second electrode on the second electron transport layer comprises: forming a first sub-electrode solid film on the second electron transport layer, and performing a second infrared radiation treatment on the first sub-electrode solid film to obtain a first sub-electrode layer; performing the second arc ion plating on the first sub-electrode layer to form the second sub-electrode layer; The second electrode includes the first sub-electrode layer and the second sub-electrode layer.

5. The preparation method according to claim 4, characterized in that: The diameter of the laser used in the first infrared radiation treatment is 2 to 10 mm; and / or The wavelength of light used in the first infrared radiation treatment is 1000-1064 nm; and / or The pulse width of the first infrared radiation treatment is 100 to 120 fs; and / or The repetition frequency of the first infrared radiation treatment is 1 to 1.5 kHz; and / or The beam quality factor of the light used in the first infrared radiation treatment is 1 to 1.2; and / or The treatment time of the first infrared radiation treatment is 20 to 60 seconds; and / or The diameter of the laser used in the second infrared radiation treatment is 2 to 10 mm; and / or The wavelength of light used in the second infrared radiation treatment is 1000-1064 nm; and / or The pulse width of the second infrared radiation treatment is 100 to 120 fs; and / or The repetition frequency of the second infrared radiation treatment is 1 to 1.5 kHz; and / or The beam quality factor of the light used in the second infrared radiation treatment is 1 to 1.2; and / or The treatment time of the second infrared radiation treatment is 20 to 60 seconds.

6. The preparation method according to claim 3, characterized in that: The temperature of the first arc ion plating is 25° C. to 80° C.; and / or The arc voltage of the first arc ion plating is 20-50V; and / or The arc current of the first arc ion plating is 50-100A; and / or The first arc ion plating treatment time is 20 to 600 seconds; and / or The background gas of the first arc ion plating is selected from one or both of argon and nitrogen; and / or The working gas pressure of the first arc ion plating is 1×10 -2 ~1×10 -1 Pa; and / or The bias voltage of the first arc ion plating is greater than 0 and less than or equal to 50V; and / or The temperature of the second arc ion plating is 25° C. to 80° C.; and / or The arc voltage of the second arc ion plating is 20-50V; and / or The arc current of the second arc ion plating is 50-100A; and / or The second arc ion plating treatment time is 20 to 600 seconds; and / or The background gas of the second arc ion plating is selected from one or both of argon and nitrogen; and / or The working gas pressure of the second arc ion plating is 1×10 -2 ~1×10 -1 Pa; and / or The bias voltage of the second arc ion plating is greater than 0 and less than or equal to 50V.

7. The preparation method according to claim 6, characterized in that: The temperature of the first arc ion plating is 25° C. to 60° C.; and / or The temperature of the second arc ion plating is 25° C. to 60° C.; and / or The material of the second electron transport layer includes doped inorganic nanocrystals or undoped inorganic nanocrystals; wherein the undoped inorganic nanocrystals are selected from one or more of ZnO, TiO2, SnO2, Ta2O3, ZrO2, NiO, Al2O3, GaO, Ga2O3, ZnS, ZnSe, CdS, InP, GaP, BaTiO3, Cs2CO3, Rb2CO3, RbBr, LiF, MgP, MgF2; the doped inorganic nanocrystals include the undoped inorganic nanocrystals and doping elements, and the doping elements are selected from one or more of Mg, Ca, Li, Ga, Al, Co, Mn, Zr, W, Ti, and Y.

8. The preparation method according to claim 2, characterized in that: The step of forming a first electron transport solid film on the first electrode comprises: providing a first solution, the first solution comprising a first electron transport material and a first solvent; The first solution is placed on the first electrode and dried to obtain the first electron transport solid film.

9. The preparation method according to claim 8, characterized in that: The first electron transport material is selected from doped inorganic nanocrystals or undoped inorganic nanocrystals; wherein the undoped inorganic nanocrystals are selected from one or more of ZnO, TiO2, SnO2, Ta2O3, ZrO2, NiO, Al2O3, GaO, Ga2O3, ZnS, ZnSe, CdS, InP, GaP, BaTiO3, Cs2CO3, Rb2CO3, RbBr, LiF, MgP, MgF2; the doped inorganic nanocrystals include the undoped inorganic nanocrystals and doping elements, and the doping elements are selected from one or more of Mg, Ca, Li, Ga, Al, Co, Mn, Zr, W, Ti, Y; and / or, The average particle size of the first electron transport material is 2 to 15 nm; and / or, The first solvent may include one or more of methanol, ethanol, isopropanol, butanol, acetonitrile, N,N-dimethylformamide, dimethyl sulfoxide, and acetone; and / or, The concentration of the first electron transport material in the first solution is 10 to 50 mg / mL.

10. The preparation method according to claim 1, characterized in that: The thickness of the first electron transport layer is 10 to 80 nm; and / or, The thickness of the second electron transport layer is 10 to 80 nm; and / or, The sum of the thickness of the first electron transport layer and the second electron transport layer is 20 to 160 nm; and / or, The thickness ratio of the first electron transport layer to the second electron transport layer is (4-6):

5.

11. The preparation method according to claim 3, characterized in that: The second electrode is independently selected from a metal electrode, a carbon electrode, a doped or undoped metal oxide electrode and a composite electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS and ZnS / Al / ZnS; and / or The thickness of the second electrode is 50-110 nm; and / or, The ratio of the thickness of the first sub-electrode layer to the thickness of the second sub-electrode layer is (0.3-0.7):

1.

12. The preparation method according to claim 4, characterized in that: The first electrode is selected from a metal electrode, a carbon electrode, a doped or undoped metal oxide electrode and a composite electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS and ZnS / Al / ZnS; and / or, The thickness of the first electrode is 50 to 110 nm; and / or, The prefabricated device further comprises a light-emitting layer, which is arranged between the first electrode and the first electron transport layer, and the material of the light-emitting layer is selected from an organic light-emitting material or a quantum dot light-emitting material; the organic light-emitting material is selected from at least one of diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives or fluorene derivatives, TBPe fluorescent materials emitting blue light, TTPA fluorescent materials emitting green light, TBRb fluorescent materials emitting orange light and DBP fluorescent materials emitting red light; the quantum dot light-emitting material is selected from at least one of single-structure quantum dots, core-shell quantum dots and perovskite semiconductor materials, and the single-structure quantum dots are selected from II-VI compounds, IV-VI compounds, III- At least one of a Group V compound and a Group I-III-VI compound, wherein the Group II-VI compound is selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, Cd At least one of dHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, the IV-VI group compound is selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound is selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNA s, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2;The core of the quantum dots of the core-shell structure is selected from any one of the above-mentioned single-structure quantum dots, and the shell material of the quantum dots of the core-shell structure is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS and ZnS; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2 + Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of; and / or, The thickness of the light-emitting layer is 30 to 50 nm; and / or, The prefabricated device further includes a hole functional layer, and the hole functional layer is arranged between the first electrode and the light-emitting layer.

13. The preparation method according to claim 12, characterized in that: The hole functional layer includes at least one of a hole injection layer and a hole transport layer, wherein the hole injection layer is disposed close to the first electrode, and the hole transport layer is disposed close to the light emitting layer; The hole transport layer material includes arylamine, polyaniline, polypyrrole, polyphenylene vinylene and its derivatives, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraaryl benzidine, PEDOT:PSS and its derivatives, poly(N-vinyl carbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped or undoped NiO, MoO3, WO3, V2O5, CrO3, C uO, MoS2, MoSe2, WS3, WSe3, CuS, CuSCN, or one or more thereof; wherein the aromatic amine is selected from 4,4'-di(9-carbazole)biphenyl, poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, poly(9,9-dioctylfluorene-co-bis-N,N-phenyl triphenylamine, 4,4',4"-tri(carbazol-9-yl)triphenylamine, 4,4',4"-tri(N-carbazol-1,4-yl)triphenylamine, 4,4',4"-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1, One or more of 1'-biphenyl-4,4'-diamine, Spiro-NPB, Spiro-TPD, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, and Spiro-NPB; the polyphenylene vinylene and its derivatives are selected from one or more of poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene]; and / or, The thickness of the hole transport layer is 50 to 100 nm; and / or, The material of the hole injection layer includes one or more of PEDOT:PSS, MCC, CuPc, F4-TCNQ, HATCN, doped or undoped NiO, V2O5, CrO3, CuO, CuS, MoO3, MoS2, MoSe2, WO3, WS2, WSe2 and CuSCN; and / or, The thickness of the hole injection layer is 50-100 nm.

14. A photoelectric device, characterized in that: The photoelectric device is prepared by the method for preparing the photoelectric device according to any one of claims 1 to 13.

15. A display device, characterized in that: The display device comprises the optoelectronic device according to claim 14.

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