Preparation method of display panel

Abstract

The embodiment of the invention discloses a preparation method of a display panel. The preparation method comprises the following steps: providing a substrate; preparing a first electrode fixing part on one side of the substrate; preparing a first electrode on one side of the substrate and in a limited interval of the first electrode limiting part; and removing the first electrode limiting part, and preparing a light-emitting layer and a second electrode on one side, far away from the substrate, of the first electrode. According to the technical scheme, the preparation method of the first electrode is optimized, the problem that when the first electrode is prepared through conventional dry etching, formed reactants are not prone to volatilization, excessive polymers are generated, and consequently the first electrode is abnormal is solved, the performance of the first electrode is guaranteed, and the optical performance of the display panel is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor display technology, and in particular to a method for preparing a display panel. Background Art

[0002] In the current production process of Micro OLED display screens, the film structure of the top-emitting pixel anode generally uses Al as the main material and Ti / TiN / ITO as the auxiliary material, because the method of making the Al film layer into a graphic form is relatively convenient, and its reflectivity can reach 80% to 95% in the visible light range, which can basically meet the needs of traditional Micro OLED display screens. With the development of process technology, in order to further improve product performance, some manufacturers currently choose Ag as the main anode material. Since the reflectivity of Ag in the visible light range can reach more than 95%, it is currently a good choice as a top-emitting anode OLED display screen, which can further improve product performance.

[0003] However, conventional dry etching of Ag anode uses Cl-based gas for patterning. However, the reactants formed by etching the Ag anode are not volatile and will produce excessive polymers, leading to abnormal pixel anodes, thus affecting anode performance and limiting the application of Ag anodes in OLED displays. Summary of the invention

[0004] The embodiment of the present invention provides a method for manufacturing a display panel, optimizes the method for manufacturing an electrode, ensures the performance of the pixel electrode, and improves the optical performance of the display panel.

[0005] In a first aspect, an embodiment of the present invention provides a method for manufacturing a display panel, the method comprising:

[0006] providing a substrate;

[0007] Prepare a first electrode defining portion on one side of the substrate;

[0008] Prepare a first electrode on one side of the substrate and within a defined area of ​​the first electrode defining portion;

[0009] The first electrode defining portion is removed, and a light-emitting layer and a second electrode are prepared on a side of the first electrode away from the substrate.

[0010] Optionally, preparing a first electrode on one side of the substrate and within a defined area of ​​the first electrode defining portion includes:

[0011] Prepare a first electrode layer on one side of the substrate and on a side of the first electrode defining portion away from the substrate;

[0012] The first electrode layer located on a side of the first electrode defining portion away from the substrate is removed to obtain a first electrode located on one side of the substrate and within a defined area of ​​the first electrode defining portion.

[0013] Optionally, along the thickness direction of the display panel, the thickness of the first electrode is smaller than the thickness of the first electrode defining portion;

[0014] Removing the first electrode layer located on a side of the first electrode defining portion away from the substrate comprises:

[0015] Preparing a protective layer on a side of the first electrode layer away from the substrate;

[0016] The protection layer and the first electrode layer located on a side of the first electrode defining portion away from the substrate are removed by a grinding process.

[0017] Optionally, removing the first electrode defining portion includes:

[0018] The first electrode defining portion and the protection layer located on a side of the first electrode away from the substrate are removed.

[0019] Optionally, removing the first electrode defining portion and the protective layer located on a side of the first electrode away from the substrate includes:

[0020] removing the protective layer located on a side of the first electrode away from the substrate;

[0021] The first electrode defining portion is removed.

[0022] Optionally, removing the first electrode defining portion and the protective layer located on a side of the first electrode away from the substrate includes:

[0023] The first electrode defining portion and the protective layer located on the side of the first electrode away from the substrate are removed in the same etching process by using an etching gas; wherein the etching gas has different etching rates for the protective layer and the first electrode defining portion.

[0024] Optionally, the etching gas includes trifluoromethane, oxygen and nitrogen.

[0025] Optionally, removing the protective layer and the first electrode layer located on a side of the first electrode defining portion away from the substrate by a grinding process includes:

[0026] The protection layer and the first electrode layer located on a side of the first electrode defining portion away from the substrate are removed by a chemical mechanical polishing process.

[0027] Optionally, preparing a first electrode defining portion on one side of the substrate includes:

[0028] Depositing a first electrode defining layer on one side of the substrate;

[0029] preparing an organic layer on a side of the first electrode defining layer away from the substrate;

[0030] Performing patterning on the organic layer to form a defining portion pattern on the organic layer;

[0031] Etching the first electrode defining layer according to the defining portion pattern to form the first electrode defining portion;

[0032] The organic layer was removed.

[0033] Optionally, a light-emitting layer and a second electrode are prepared on a side of the first electrode away from the substrate, comprising:

[0034] Preparing a light-emitting layer on a side of the first electrode away from the substrate;

[0035] A second electrode is prepared on a side of the light-emitting layer away from the substrate.

[0036] In this embodiment, a first electrode defining portion is prepared on one side of the substrate so that the substrate and the first electrode defining portion form a defined interval. Based on the actual pattern requirements of electrode preparation, the preparation position of the first electrode defining portion on one side of the substrate is adjusted, so that a first electrode of a preset pattern is prepared through the defined interval, and the first electrode defining portion is removed to complete the preparation of the first electrode on one side of the substrate, and then a light-emitting layer and a second electrode are prepared on the side of the first electrode away from the substrate to complete the preparation of the display panel. The preparation method of the first electrode is optimized, and the problem that the reactants formed are not easy to volatilize and excessive polymers are produced when the first electrode is prepared by conventional dry etching, resulting in abnormalities of the first electrode, is avoided, the performance of the first electrode is guaranteed, and the optical performance of the display panel is improved.

[0037] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0039] Figure 1 It is a process flow chart of a method for preparing an anode in a display panel in the prior art;

[0040] Figure 2 is a flow chart of a method for preparing a display panel according to an embodiment of the present invention;

[0041] Figure 3 is a process flow chart of a method for preparing a display panel provided according to an embodiment of the present invention;

[0042] Figure 4 is a flow chart of another method for preparing a display panel provided according to an embodiment of the present invention;

[0043] Figure 5 is a process flow chart of another method for preparing a display panel provided according to an embodiment of the present invention;

[0044] Figure 6 is a flow chart of another method for preparing a display panel provided according to an embodiment of the present invention;

[0045] Figure 7 is a process flow chart of another method for preparing a display panel provided according to an embodiment of the present invention;

[0046] Figure 8 is a flow chart of another method for preparing a display panel provided according to an embodiment of the present invention;

[0047] Fig. 9 is a process flow chart of another method for preparing a display panel provided according to an embodiment of the present invention;

[0048] Fig.10 is a flow chart of another method for preparing a display panel provided according to an embodiment of the present invention;

[0049] Fig.11 is a process flow chart of another method for preparing a display panel provided according to an embodiment of the present invention. DETAILED DESCRIPTION

[0050] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0051] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0052] Figure 1 is a process flow chart of a method for preparing an anode in a display panel in the prior art, such as Figure 1 As shown, the process flow for patterned preparation of the anode includes: step a1, sequentially preparing an ITO layer, an Ag layer, an ITO layer and a mask mask on one side of the substrate N, wherein the composite film layer of ITO / Ag / ITO constitutes an anode film layer; step a2, patterned etching of the mask mask to form an anode pattern on the mask mask; step a3, etching the anode film layer according to the anode pattern formed by the mask mask, so that the anode film layer forms a preset anode according to the anode pattern; step a4, etching away the mask mask on the surface of the anode away from the substrate N to prepare an anode on one side of the substrate N. The above-mentioned patterned preparation of the anode is achieved by etching the anode film layer in step a3, however, when the anode mainly composed of Ag is dry-etched by using chlorine-based gas to pattern the anode, the reactants formed by etching are not easy to volatilize, and excessive polymers will be generated to cause abnormal pixel anodes, thereby affecting the performance of the pixel anodes.

[0053] In order to solve the above problems, Figure 2 is a flow chart of a method for preparing a display panel according to an embodiment of the present invention; Figure 3 1 is a process flow chart of a method for preparing a display panel according to an embodiment of the present invention. This embodiment is applicable to the case of preparing a display panel. Figure 2 and Figure 3 As shown, the preparation method provided in the embodiment of the present invention comprises:

[0054] S110, providing a substrate.

[0055] Specifically, Figure 3As shown in step b1 in the figure, the substrate 1 can be a CMOS substrate made of complementary metal oxide semiconductor, also known as a silicon-based backplane, which not only serves as the basic supporting structure of the Micro OLED display device, but also integrates key electronic components and circuits. This substrate is made of single-crystal silicon material and uses mature integrated circuit CMOS technology to greatly improve the manufacturing yield and achieve high-resolution display effects.

[0056] S120, preparing a first electrode defining portion on one side of the substrate.

[0057] Specifically, Figure 3 As shown in step b2 in the above, according to the pattern requirements for preparing the first electrode, a first electrode defining portion 2 is prepared on one side of the substrate 1. The first electrode defining portion 2 includes a first sub-defining portion 21 and a second sub-defining portion 22. The shape of the first electrode formed on the substrate 1 is defined by the position distribution of the first sub-defining portion 21 and the second sub-defining portion 22 to achieve patterned preparation of the first electrode of the display panel. The material of the first electrode defining portion 2 can be at least one of a high molecular polymer, silicon oxide, silicon oxynitride or silicon nitride, which is not specifically limited in this embodiment.

[0058] S130, preparing a first electrode on one side of the substrate and within a defined area of ​​a first electrode defining portion.

[0059] Specifically, Figure 3 As shown in step b3 in the figure, the substrate 1 and the first electrode defining portion 2 form a defined interval for preparing the first electrode 3, that is, the defined interval is the first sub-defining portion 21, the surface of one side of the substrate 1, and the groove formed by the second sub-defining portion 22. Since the first sub-defining portion 21 and the second sub-defining portion 22 are prepared on one side of the substrate 1 according to the preset pattern required for the first electrode 3, the first electrode 3 with the preset pattern can be obtained in the defined interval by preparing the first electrode film layer on one side of the substrate 1 and in the defined interval of the first electrode defining portion 2.

[0060] Exemplarily, the first electrode 3 can be the anode of the display panel. By depositing the anode film layer in a limited interval, the anode film layer can be patterned using the limited interval formed by the first sub-limiting portion 21, the substrate 1 and the second sub-limiting portion 22 to obtain an anode with a preset pattern, thereby realizing patterned preparation from the anode film layer to the anode.

[0061] S140, removing the first electrode defining portion, and preparing a light-emitting layer and a second electrode on a side of the first electrode away from the substrate.

[0062] Specifically, Figure 3As shown in step b4 in the figure, the first electrode defining portion 2 can be removed by an etching process to complete the patterning of the first electrode 3 on the substrate 1, and then the light-emitting layer 4 and the second electrode 5 are prepared on the side of the first electrode 3 away from the substrate 1 to complete the preparation of the display panel. The first electrode with a preset pattern can be obtained without etching the first electrode film layer, avoiding the problem of the reactants affecting the abnormal performance of the first electrode when the first electrode is patterned by conventional dry etching. Exemplarily, the second electrode 5 can be a cathode, which is not specifically limited in this embodiment.

[0063] In this embodiment, a first electrode defining portion is prepared on one side of the substrate so that the substrate and the first electrode defining portion form a defined interval. Based on the actual pattern requirements of electrode preparation, the preparation position of the first electrode defining portion on one side of the substrate is adjusted, so that a first electrode of a preset pattern is prepared through the defined interval, and the first electrode defining portion is removed to complete the preparation of the first electrode on one side of the substrate, and then a light-emitting layer and a second electrode are prepared on the side of the first electrode away from the substrate to complete the preparation of the display panel. The preparation method of the first electrode is optimized, and the problem that the reactants formed are not easy to volatilize and excessive polymers are produced when the first electrode is prepared by conventional dry etching, resulting in abnormalities of the first electrode, is avoided, the performance of the first electrode is guaranteed, and the optical performance of the display panel is improved.

[0064] Based on the above embodiments, Figure 4 is a flow chart of another method for preparing a display panel provided according to an embodiment of the present invention; Figure 5 is a process flow chart of another method for preparing a display panel provided according to an embodiment of the present invention. Figure 4 The manufacturing method shown in the figure explains how to manufacture the first electrode on one side of the substrate and within the defined area of ​​the first electrode defining portion. Figure 4 As shown, the preparation method provided in the embodiment of the present invention comprises:

[0065] S210: Provide a substrate.

[0066] like Figure 5 As shown in step c1 in .

[0067] S220, preparing a first electrode defining portion on one side of the substrate.

[0068] like Figure 5 As shown in step c2 in .

[0069] S230, preparing a first electrode layer on one side of the substrate and on a side of the first electrode defining portion away from the substrate.

[0070] Specifically, Figure 5As shown in step c3, the first electrode layer 6 can be prepared on one side of the substrate 1 and on the side of the first electrode defining portion 2 away from the substrate 1 in the same preparation process, wherein the process for preparing the first electrode layer 6 can be physical vapor deposition, chemical vapor deposition, solution method or electroplating method.

[0071] Exemplarily, the first electrode layer 6 may be a composite film layer of ITO / Ag / ITO (not shown in the figure), that is, the first electrode layer 6 may include a first ITO film layer, an Ag film layer, and a second ITO film layer. The preparation process of the first electrode layer 6 includes a first preparation process, a second preparation process, and a third preparation process. The first ITO film layer is prepared on one side of the substrate 1 and on the side of the first electrode defining portion 2 away from the substrate 1 by the first preparation process at the same time; then, the Ag film layer is prepared on the surface of the first ITO film layer away from the substrate 1 by the second preparation process; and finally, the second ITO film layer is prepared on the surface of the Ag film layer away from the substrate 1 by the third preparation process. The first electrode layer 6 is prepared on one side of the substrate 1 and on the side of the first electrode defining portion 2 away from the substrate 1 by sequentially preparing the first ITO film layer, the Ag film layer, and the second ITO film layer.

[0072] S240, removing the first electrode layer located on the side of the first electrode defining portion away from the substrate, to obtain a first electrode located on one side of the substrate and within a defined interval of the first electrode defining portion.

[0073] Specifically, Figure 5 As shown in step c4 in the above, the first electrode layer 6 located on the surface of the first electrode defining portion 2 away from the substrate 1 is removed by a removal process, and the first electrode layer 6 in the defined interval formed by the first sub-defining portion 21, the substrate 1 and the second sub-defining portion 22 is retained, thereby obtaining the first electrode 3 located on one side of the substrate 1 and in the defined interval of the first electrode defining portion 2. The removal process may be wet etching, dry etching, laser etching, mechanical stripping or selective chemical dissolution.

[0074] S250, removing the first electrode defining portion, and preparing a light-emitting layer and a second electrode on a side of the first electrode away from the substrate.

[0075] Specifically, Figure 5 As shown in step c5 in .

[0076] In this embodiment, by setting up the substrate and the first electrode defining portion, the first electrode film layer can be formed at one time on one side of the substrate and on the side of the first electrode defining portion away from the substrate. By removing the first electrode layer on the side of the first electrode defining portion away from the substrate, a first electrode of a preset pattern can be obtained within a limited interval. There is no need to etch the first electrode to achieve patterning of the first electrode layer, which simplifies the preparation process of the first electrode and ensures the performance of the first electrode.

[0077] Optionally, along the thickness direction of the display panel, the thickness of the first electrode is smaller than the thickness of the first electrode defining portion.

[0078] Specifically, Figure 5 As shown in step c3 and step c4 in , the first sub-defining portion 21, the substrate 1 and the second sub-defining portion 22 form a groove. Since the first sub-defining portion 21 and the second sub-defining portion 22 are arranged on one side surface of the substrate 1, the depth of the groove is determined by the thickness h1 of the first electrode defining portion 2. When preparing the first electrode layer 6, the first electrode layer 6 is prepared at one time on one side of the substrate 1 and the side of the first electrode defining portion 2 away from the substrate 1, so along the thickness direction of the display panel, the thickness h2 of the first electrode layer 6 is the thickness h3 of the first electrode 3. The thickness h2 of the first electrode layer 6 along the thickness direction of the display panel can be set to be smaller than the thickness h1 of the first electrode defining portion 2, that is, the thickness h3 of the first electrode 3 is smaller than the thickness h1 of the first electrode defining portion 2, so that the first electrode layer 6 corresponding to the first electrode 3 prepared can be completely formed in the limited interval on one side of the substrate, thereby improving the accuracy of the patterned preparation of the first electrode 3.

[0079] Based on the above embodiments, Figure 6 is a flow chart of another method for preparing a display panel provided according to an embodiment of the present invention; Figure 7 is a process flow chart of another method for preparing a display panel provided according to an embodiment of the present invention. Figure 6 The preparation method shown in the figure illustrates how to remove the first electrode layer located on the side of the first electrode defining portion away from the substrate. Figure 6 As shown, the preparation method provided in the embodiment of the present invention comprises:

[0080] S310, providing a substrate.

[0081] like Figure 7 As shown in step d1 in .

[0082] S320, preparing a first electrode defining portion on one side of the substrate.

[0083] like Figure 7 As shown in step d2 in .

[0084] S330, preparing a first electrode layer on one side of the substrate and on a side of the first electrode defining portion away from the substrate.

[0085] like Figure 7 As shown in step d3 in .

[0086] S340, preparing a protective layer on a side of the first electrode layer away from the substrate.

[0087] Specifically, Figure 7As shown in step d4 in the embodiment, a protective layer 7 is prepared on the side of the first electrode layer 6 away from the substrate 1, wherein the process for preparing the protective layer 7 may be physical vapor deposition, chemical vapor deposition, solution method or electroplating method, and the material of the protective layer 7 may be at least one of a high molecular polymer, silicon oxide, silicon oxynitride or silicon nitride, which is not specifically limited in this embodiment. The protective layer 7 can provide an additional physical barrier for the first electrode layer 6 to prevent physical damage such as scratches and collisions during the subsequent preparation process, which is conducive to maintaining the integrity and functionality of the first electrode layer 6.

[0088] S350, removing the protective layer and the first electrode layer located on the side of the first electrode defining portion away from the substrate through a grinding process.

[0089] Specifically, Figure 7 As shown in step d5 in , since the first electrode layer 6 and the protective layer 7 are formed at one time and cover the first electrode defining portion 2 and the substrate 1 at the same time, compared with the first electrode layer 6 and the protective layer 7 within the limited interval of the first electrode defining portion 2, the protective layer 7 and the first electrode layer 6 on the side of the first electrode defining portion 2 away from the substrate 1 are redundant film layers in the preparation process. Therefore, the protective layer 7 and the first electrode layer 6 on the side of the first electrode defining portion 2 away from the substrate 1 can be removed by a physical or chemical mechanical grinding process, so as to subsequently etch the first electrode defining portion 2, thereby avoiding the problem of excessive non-volatile polymers being easily produced by removing the first electrode layer 6 through an etching process, resulting in abnormalities in the first electrode. At the same time, retaining the protective layer 7 on the surface of the first electrode 3 away from the substrate 1 can reduce the impact of the grinding process on the first electrode 3, thereby ensuring the performance of the first electrode.

[0090] S360, removing the first electrode defining portion and the protective layer located on the side of the first electrode away from the substrate, and preparing a light-emitting layer and a second electrode on the side of the first electrode away from the substrate.

[0091] Specifically, Figure 7 As shown in step d6 in, after the protective layer 7 and the first electrode layer 6 located on the side of the first electrode defining portion 2 away from the substrate 1 are removed by the grinding process, the protective layer 7 on the side of the first electrode 3 away from the substrate 1 completes the task of protecting the first electrode 3 from the grinding process. Therefore, the first electrode defining portion 2 and the protective layer 7 located on the side of the first electrode 3 away from the substrate 1 can be removed by the etching process to complete the patterning preparation of the first electrode 3 on the substrate 1, and then the light-emitting layer 4 and the second electrode 5 are prepared on the side of the first electrode 3 away from the substrate 1 to complete the preparation of the display panel. The first electrode 3 with a preset pattern can be obtained without etching the first electrode film layer, avoiding the problem of the reactants generated when the first electrode is patterned by conventional dry etching to affect the abnormal performance of the first electrode.

[0092] In this embodiment, a protective layer is prepared on the surface of the first electrode layer away from the substrate, and the protective layer and the first electrode layer located on the side of the first electrode defining portion away from the substrate are removed through a grinding process, thereby avoiding the problem of excessive non-volatile polymer being easily produced by removing the first electrode layer through an etching process, which leads to abnormality of the first electrode. At the same time, retaining the protective layer on the surface of the first electrode away from the substrate can reduce the impact of the grinding process on the first electrode, thereby ensuring the performance of the first electrode.

[0093] Optionally, removing the protective layer and the first electrode layer located on a side of the first electrode defining portion away from the substrate by a grinding process includes:

[0094] The protection layer and the first electrode layer located on a side of the first electrode defining portion away from the substrate are removed by a chemical mechanical polishing process.

[0095] Specifically, refer to Figure 7 The chemical mechanical polishing process (CMP) is a process that combines chemical corrosion and mechanical grinding. The CMP polishing liquid reacts chemically with the protective layer 7 and the first electrode layer 6 located on the side of the first electrode defining part 2 away from the substrate 1 to form a thin film that can be mechanically removed. Then, the thin film generated by the chemical reaction is physically removed by the rotation and pressure applied by the polishing pad and the movement of the polishing head, thereby removing the protective layer 7 and the first electrode layer 6 located on the side of the first electrode defining part 2 away from the substrate 1. The CMP polishing liquid is composed of a grinding liquid, a buffer, a polishing agent, and an additive. The grinding liquid mainly plays a role in removing the film layer, the buffer mainly plays a role in adjusting the pH value and maintaining the stability of the liquid, the polishing agent mainly plays a role in lubrication and reducing surface friction, and the additive mainly improves the dispersion and chemical reaction performance of the CMP polishing liquid. Among them, the grinding liquid can be at least one of aluminum oxide, diamond, zirconium dioxide or manganese dioxide; the buffer can be an alkaline buffer (ammonia, phosphate and carbonate, etc.) or an acidic buffer (citric acid, acetic acid, etc.); the polishing agent can be cerium nitrate, aluminum nitrate or nickel nitrate; the additive can be an oxidant, a dispersant or a surfactant.

[0096] Exemplarily, when the first electrode layer 6 is a composite film layer of ITO / Ag / ITO and the protective layer 7 is silicon nitride, a CMP solution mixed with aluminum oxide, diamond, alkaline buffer, aluminum nitrate and surfactant can be subjected to a chemical mechanical polishing process to remove the protective layer 7 and the first electrode layer 6 located on the side of the first electrode defining portion 2 away from the substrate 1.

[0097] Optionally, removing the protective layer and the first electrode layer located on a side of the first electrode defining portion away from the substrate by a grinding process may further include:

[0098] The protective layer and the first electrode layer located on the side of the first electrode defining portion away from the substrate, as well as the protective layer on the side of the first electrode away from the substrate, are removed by a chemical mechanical polishing process so that the thickness of the first electrode defining portion along the thickness direction of the display panel is equal to the thickness of the first electrode.

[0099] For details, please refer to Figure 7 , can be processed from top to bottom by chemical mechanical polishing process Figure 7 The components in step d4 are polished layer by layer parallel to the surface of the substrate 1 until all the protective layers 7 disappear. Since the first electrode 3 is formed in the limited area of ​​the first electrode defining portion 2, the thickness of the first electrode 3 is less than the thickness of the first electrode defining portion 2 along the thickness direction of the display panel. After the protective layer 7 above the first electrode 3 is ground off, the thickness of the first electrode defining portion 2 is equal to the thickness of the first electrode 3. Then, the remaining first electrode defining portion 2 is etched away to obtain the first anode 3 on one side surface of the substrate 1.

[0100] Optionally, removing the first electrode defining portion and the protective layer located on a side of the first electrode away from the substrate includes:

[0101] The first electrode defining portion and the protective layer located on the side of the first electrode away from the substrate are removed in the same etching process by using etching gas; wherein the etching gas has different etching rates for the protective layer and the first electrode defining portion.

[0102] Specifically, refer to Figure 7 , the first electrode defining portion 2 and the protective layer 7 located on the side of the first electrode 3 away from the substrate 1 are etched by using a mixed gas that can simultaneously etch the first electrode defining portion 2 and the protective layer 7. Since the protective layer 7 located on the side of the first electrode 3 away from the substrate 1 is a film layer retained after a top-down grinding process, and the first electrode 3 after the grinding process and the protective layer 7 located on its upper surface are both within the defined area of ​​the first electrode defining portion 2, at this time, the sum of the thickness of the first electrode 3 and the protective layer 7 located on its upper surface is less than or equal to the thickness of the first electrode defining portion 2, that is, the thickness of the protective layer 7 on the side of the first electrode 3 away from the substrate 1 is less than the thickness of the first electrode defining portion 2. Based on the fact that the thickness of the protective layer 7 on the side of the first electrode 3 away from the substrate 1 is less than the thickness of the first electrode defining portion 2, when the above two film layers are removed simultaneously through the same etching process, it is necessary to control the etching rates of the etching gas to be different. For example, the rate V2 at which the etching gas etches the protective layer 7 is less than the rate V1 at which the etching gas etches the first electrode defining portion 2, thereby ensuring that the protective layer 7 on the side of the first electrode 3 away from the substrate 1 and the first defining portion 2 are removed simultaneously, thereby improving the preparation efficiency.

[0103] Exemplarily, the first electrode defining portion 2 can be a silicon nitride film layer with a thickness of 100 nm, and the protective layer 7 located on the side of the first electrode 3 away from the substrate 1 can be a silicon oxide film layer with a thickness of 20 nm. When a mixed etching gas is used to simultaneously etch the first electrode defining portion 2 and the protective layer 7, the content of each gas in the mixed etching gas can be controlled so that the etching rate V1 of the first electrode defining portion 2 is approximately five times the etching rate V2 of the protective layer 7, thereby achieving the simultaneous removal of the first electrode defining portion 2 and the protective layer 7 located on the side of the first electrode 3 away from the substrate 1 in the same etching process.

[0104] Optionally, the etching gas includes trifluoromethane, oxygen and nitrogen.

[0105] Specifically, the etching gas may include trifluoromethane that can etch both the first electrode defining portion 2 and the protective layer 7, ensuring that the same etching process can remove the first electrode defining portion 2 and the protective layer 7. The etching rates of the first electrode defining portion 2 and the protective layer 7 are adjusted by controlling the content of oxygen and nitrogen doped in the etching gas, so that the first electrode defining portion 2 and the protective layer 7 of different thicknesses can be etched away in the same time period.

[0106] Exemplarily, the first electrode defining portion 2 may be a silicon nitride film layer with a thickness of 100 nm, the protective layer 7 located on the side of the first electrode 3 away from the substrate 1 may be a silicon oxide film layer with a thickness of 20 nm, and the etching gas may be composed of 30 sccm of trifluoromethane, 20 sccm of nitrogen, and 20 sccm of oxygen, wherein oxygen can increase the etching rate of silicon oxide, and nitrogen can increase the etching rate of silicon nitride. The etching gas is controlled to have an etching rate V1 of 2.76 nm / min for the silicon nitride film layer and an etching rate V2 of 0.55 nm / min for the silicon oxide film layer, so as to achieve an etching speed ratio of the first electrode defining portion 2 to the protective layer 7 of approximately 5:1 when the thickness ratio of the first electrode defining portion 2 to the protective layer 7 is 5:1, so that the first electrode defining portion 2 and the protective layer 7 of different thicknesses can be removed within the same time period.

[0107] Based on the above embodiments, Figure 8 is a flow chart of another method for preparing a display panel provided according to an embodiment of the present invention; Fig. 9 is a process flow chart of another method for preparing a display panel provided according to an embodiment of the present invention. Figure 8 The preparation method shown in the figure explains how to remove the first electrode defining portion and the protective layer located on the side of the first electrode away from the substrate. Figure 8 As shown, the preparation method provided in the embodiment of the present invention comprises:

[0108] S410, providing a substrate.

[0109] like Fig. 9 As shown in step f1 in .

[0110] S420, preparing a first electrode defining portion on one side of the substrate.

[0111] like Fig. 9 As shown in step f2 in .

[0112] S430, preparing a first electrode layer on one side of the substrate and on a side of the first electrode defining portion away from the substrate.

[0113] like Fig. 9 As shown in step f3 in .

[0114] S440, preparing a protective layer on a side of the first electrode layer away from the substrate.

[0115] like Fig. 9 As shown in step f4 in.

[0116] S450, removing the protection layer and the first electrode layer located on the side of the first electrode defining portion away from the substrate through a grinding process.

[0117] like Fig. 9 As shown in step f5 in

[0118] S460, removing the protective layer located on a side of the first electrode away from the substrate.

[0119] Specifically, Fig. 9 As shown in step f6 in the above, the protective layer 7 located on the side of the first electrode 3 away from the substrate 1 can be removed by using the first etching gas. The material of the protective layer 7 can be silicon nitride, and the first etching gas can be trifluoromethane and nitrogen.

[0120] S470, removing the first electrode defining portion.

[0121] Specifically, Fig. 9 As shown in step f7 in the embodiment, the first electrode defining portion 2 can be removed by a second etching gas to complete the preparation of a first electrode 3 of a preset pattern on one side surface of the substrate 1. The material of the first electrode defining portion 2 can be silicon oxide, and the second etching gas can be carbon tetrafluoride and oxygen.

[0122] It should be noted that the above only exemplifies the operation sequence of removing the protective layer 7 located on the side of the first electrode 3 away from the substrate 1 and removing the first electrode defining portion 2. It is also possible to first remove the first electrode defining portion 2 and then remove the protective layer 7 located on the side of the first electrode 3 away from the substrate 1 according to actual conditions. This embodiment does not specifically limit the order of removing the two.

[0123] S480, preparing a light-emitting layer and a second electrode on a side of the first electrode away from the substrate.

[0124] like Fig. 9 As shown in step f8 in .

[0125] In this embodiment, the first electrode defining portion and the protective layer located on the side of the first electrode away from the substrate are removed respectively through two etching processes. Compared with the method of simultaneously etching the first electrode defining portion and the protective layer using the same mixed etching gas, the two film layers are etched separately using two different gases. There is no need to consider the difference in etching rate of the same etching gas for the protective layer and the first electrode defining portion, thereby simplifying the etching process and improving the etching accuracy.

[0126] Based on the above embodiments, Fig.10 is a flow chart of another method for preparing a display panel provided according to an embodiment of the present invention; Fig.11 is a process flow chart of another method for preparing a display panel provided according to an embodiment of the present invention. Fig.10 The preparation method shown in FIG. 1 illustrates how to prepare the first electrode defining portion. Fig.10 As shown, the preparation method provided in the embodiment of the present invention comprises:

[0127] S510: Provide a substrate.

[0128] like Fig.11 As shown in step e1 in .

[0129] S520 , depositing a first electrode defining layer on one side of the substrate.

[0130] Specifically, Fig.11 As shown in step e2 in , a first electrode defining layer 23 is prepared on one side of the substrate 1. Along the thickness direction of the display panel, the thickness of the first electrode defining layer 23 is greater than the thickness of the first electrode to be prepared, so as to ensure the accuracy of the subsequent preparation of the first electrode. The material of the first electrode defining layer 23 can be at least one of a high molecular polymer, silicon oxide, silicon oxynitride or silicon nitride, and the deposition method can be physical vapor deposition, chemical vapor deposition or electrochemical deposition, which is not specifically limited in this embodiment.

[0131] S530 , preparing an organic layer on a side of the first electrode defining layer away from the substrate.

[0132] Specifically, Fig.11 As shown in step e3, the organic layer 8 can be a photoresist layer. By rotating the substrate at high speed, the photoresist is evenly distributed and forms a thin film under the action of centrifugal force, so that the liquid photoresist is evenly coated on the side of the first electrode defining layer away from the substrate, and pre-baked to remove the solvent in the photoresist, so that it is solidified and the adhesion is improved to form an organic layer 8.

[0133] S540 , performing patterning on the organic layer to form a defining portion pattern on the organic layer.

[0134] Specifically, Fig.11 As shown in step e4, the organic layer 8 can be a photoresist layer. The photoresist layer is exposed to light of a specific wavelength (such as ultraviolet light, yellow light, etc.) according to the preset pattern of the first electrode to be prepared. During the exposure process, the photosensitive agent in the photoresist will undergo a chemical reaction to make the exposed portion of the photoresist layer soluble. The exposed substrate 1 is then immersed in a developer to remove the exposed photoresist portion, thereby forming a desired anode pattern on the photoresist layer, completing the patterning of the organic layer 8, and forming a limiting portion pattern on the organic layer 8.

[0135] S550 , etching the first electrode defining layer according to the defining portion pattern to form a first electrode defining portion.

[0136] Specifically, Fig.11 As shown in step e5 in the method, the first electrode defining layer 23 below the organic layer 8 is etched according to the defining portion pattern, and the first electrode defining layer 23 not protected by the organic layer 8 is removed to form a first electrode defining portion 2 consisting of a first sub-defining portion 21 and a second sub-defining portion 22, and the first electrode defining portion 2 includes a defined interval for preparing the first electrode. The etching method may be dry etching or wet etching.

[0137] S560, removing the organic layer.

[0138] Specifically, Fig.11 As shown in step e6, after etching is completed, the remaining organic layer 8 on the first electrode defining portion 2 needs to be removed, which can be achieved by chemical solvents, oxygen ashing, etc., to complete the process of preparing the first electrode defining portion 2 on one side of the substrate 1.

[0139] S570, preparing a first electrode on one side of the substrate and within a defined area of ​​the first electrode defining portion.

[0140] like Fig.11 As shown in step e7 in .

[0141] S580, removing the first electrode defining portion, and preparing a light-emitting layer and a second electrode on a side of the first electrode away from the substrate.

[0142] like Fig.11 As shown in step e8 in .

[0143] This embodiment prepares the pattern of the first electrode on the organic layer and etches the first electrode defining layer according to the distribution of the organic layer, thereby completing the preparation of the first electrode defining portion with the first electrode pattern, thereby improving the flexibility and production efficiency of the first electrode preparation.

[0144] Optionally, a light-emitting layer and a second electrode are prepared on a side of the first electrode away from the substrate, comprising:

[0145] Prepare a light-emitting layer on a side of the first electrode away from the substrate;

[0146] A second electrode is prepared on a side of the light-emitting layer away from the substrate.

[0147] Specifically, refer to Fig.11 In step e8, the light-emitting layer 4 is the core part of the display technology, which is responsible for generating light. The material selection and preparation process of the light-emitting layer 4 have a crucial impact on the performance of the device. It can be prepared on the surface of the side of the first electrode 3 away from the substrate 1 by spin coating, spray coating or vacuum deposition. After the light-emitting layer 4 is prepared, the second electrode 5 is prepared on the side away from the substrate 1. The material of the second electrode 5 is usually selected from metals with high conductivity and good stability, such as aluminum, silver or their alloys. The preparation of the second electrode can be achieved by physical vapor deposition (PVD), chemical vapor deposition (CVD) or solution method. By sequentially preparing the light-emitting layer 4 and the second electrode 5 above the first electrode 3, a complete electroluminescent device can be formed. When a voltage is applied between the two electrodes, holes and electrons are injected from the anode and cathode into the light-emitting layer respectively, and recombine therein to generate excitons. The excitons release energy in the process of falling to the ground state, thereby generating light. This structure not only helps to improve the luminous efficiency of the device, but also improves the stability and life of the device by optimizing the electrode materials and preparation process.

[0148] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing a display panel, characterized in that: The preparation method comprises: providing a substrate; Prepare a first electrode defining portion on one side of the substrate; Prepare a first electrode on one side of the substrate and within a defined area of ​​the first electrode defining portion; The first electrode defining portion is removed, and a light-emitting layer and a second electrode are prepared on a side of the first electrode away from the substrate.

2. The preparation method according to claim 1, characterized in that: The first electrode is prepared on one side of the substrate and within a defined area of ​​the first electrode defining portion, comprising: Prepare a first electrode layer on one side of the substrate and on a side of the first electrode defining portion away from the substrate; The first electrode layer located on a side of the first electrode defining portion away from the substrate is removed to obtain a first electrode located on one side of the substrate and within a defined area of ​​the first electrode defining portion.

3. The preparation method according to claim 2, characterized in that: Along the thickness direction of the display panel, the thickness of the first electrode is smaller than the thickness of the first electrode defining portion; Removing the first electrode layer located on a side of the first electrode defining portion away from the substrate comprises: Preparing a protective layer on a side of the first electrode layer away from the substrate; The protection layer and the first electrode layer located on a side of the first electrode defining portion away from the substrate are removed by a grinding process.

4. The preparation method according to claim 3, characterized in that: Removing the first electrode defining portion comprises: The first electrode defining portion and the protection layer located on a side of the first electrode away from the substrate are removed.

5. The preparation method according to claim 4, characterized in that: Removing the first electrode defining portion and the protective layer located on a side of the first electrode away from the substrate comprises: removing the protective layer located on a side of the first electrode away from the substrate; The first electrode defining portion is removed.

6. The preparation method according to claim 4, characterized in that: Removing the first electrode defining portion and the protective layer located on a side of the first electrode away from the substrate comprises: The first electrode defining portion and the protective layer located on the side of the first electrode away from the substrate are removed in the same etching process by using an etching gas; wherein the etching gas has different etching rates for the protective layer and the first electrode defining portion.

7. The preparation method according to claim 6, characterized in that: The etching gas includes trifluoromethane, oxygen and nitrogen.

8. The preparation method according to claim 3, characterized in that: Removing the protective layer and the first electrode layer located on a side of the first electrode defining portion away from the substrate by a grinding process includes: The protection layer and the first electrode layer located on a side of the first electrode defining portion away from the substrate are removed by a chemical mechanical polishing process.

9. The preparation method according to claim 1, characterized in that: Preparing a first electrode defining portion on one side of the substrate includes: Depositing a first electrode defining layer on one side of the substrate; preparing an organic layer on a side of the first electrode defining layer away from the substrate; Performing patterning on the organic layer to form a defining portion pattern on the organic layer; Etching the first electrode defining layer according to the defining portion pattern to form the first electrode defining portion; The organic layer was removed.

10. The preparation method according to claim 1, characterized in that: A light-emitting layer and a second electrode are prepared on a side of the first electrode away from the substrate, comprising: Preparing a light-emitting layer on a side of the first electrode away from the substrate; A second electrode is prepared on a side of the light-emitting layer away from the substrate.

Images