Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus according to one embodiment of the present disclosure includes: a processing container; a substrate holding unit which is disposed inside the processing container and holds a substrate; a gas nozzle that sprays a gas into the processing container; an adjustment mechanism that adjusts the distance between the gas nozzle and the substrate held by the substrate holding unit; and a control unit configured to set a target value of the distance on the basis of a flow state of the gas ejected from the gas nozzle, and to control the adjustment mechanism so that the distance becomes the target value.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device and a substrate processing method. Background Art

[0002] There is known a technique for removing particles attached to a substrate by causing a vertical shock wave generated by ejecting a gas from a gas nozzle to hit the substrate (for example, refer to Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2020 / 110858 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a technology capable of efficiently removing particles according to a processing environment.

[0008] Solutions for solving problems

[0009] A substrate processing device according to one embodiment of the present invention comprises: a processing container; a substrate holding portion, which is arranged inside the processing container and is used to hold a substrate; a gas nozzle, which sprays gas into the interior of the processing container; an adjustment mechanism, which adjusts the distance between the gas nozzle and the substrate held by the substrate holding portion; and a control portion, wherein the control portion is configured to set a target value for the distance based on a flow state of the gas sprayed from the gas nozzle, and control the adjustment mechanism so that the distance becomes the target value.

[0010] Effects of the Invention

[0011] According to the present disclosure, particles can be removed efficiently according to the processing environment. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram showing a substrate processing apparatus according to an embodiment.

[0013] Figure 2 2 is a cross-sectional view showing the impact of a vertical shock wave on a substrate according to the embodiment.

[0014] Figure 3 It is a diagram showing an example of a distance adjustment method according to the embodiment.

[0015] Figure 4 1 is a flowchart showing a substrate processing method according to an embodiment. DETAILED DESCRIPTION

[0016] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the attached drawings. In all the attached drawings, the same or corresponding components or parts are marked with the same or corresponding reference numerals, and repeated descriptions are omitted.

[0017] In the following description, the X-axis direction, the Y-axis direction, and the Z-axis direction are mutually perpendicular directions, the X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction. In addition, the bottom refers to the bottom in the vertical direction (the negative direction of the Z-axis), and the top refers to the top in the vertical direction (the positive direction of the Z-axis).

[0018] (Substrate processing equipment)

[0019] Reference Figures 1 to 3 , to illustrate the substrate processing apparatus involved in the embodiment. Figure 1 It is a schematic diagram showing a substrate processing apparatus according to an embodiment.

[0020] The substrate processing apparatus 10 removes particles attached to the main surface 3 of the substrate 2 by spraying gas toward the main surface 3 of the substrate 2. The substrate 2 is, for example, a semiconductor substrate such as a silicon wafer. The substrate processing apparatus 10 mainly includes a processing container 20, a substrate holding portion 30, a rotating shaft portion 32, a rotating drive portion 34, a lifting drive portion 36, a horizontal drive portion 38, a gas nozzle 40, a nozzle lifting drive portion 50, a gas supply mechanism 60, a decompression mechanism 70, a schlieren device 80, a distance measuring portion 90, a gas receiving portion 100, and a control portion 150.

[0021] The processing container 20 has a space inside for processing the substrate 2. The processing container 20 has a loading and unloading port (not shown) for the substrate 2 and a gate valve (not shown) for opening and closing the loading and unloading port. The inner wall surface 22 of the processing container 20 has an upper wall surface 23, a lower wall surface 24, and a side wall surface 25 extending from the outer periphery of the upper wall surface 23 to the outer periphery of the lower wall surface 24.

[0022] The substrate holding portion 30 is arranged inside the processing container 20. The substrate holding portion 30 has a substrate holding surface 31 for holding the substrate 2. The substrate holding portion 30 holds the substrate 2 horizontally, for example, in a manner such that the main surface 3 of the substrate 2 from which particles are to be removed faces upward. The substrate holding portion 30 may include an electrostatic holding disk. In this case, the substrate 2 held on the substrate holding surface 31 can be fixed by electrostatic adsorption, thereby preventing the substrate 2 on the substrate holding surface 31 from warping or positional shifting. The substrate holding portion 30 may also include a mechanical clamp. In this case, the substrate 2 held on the substrate holding surface 31 can be fixed by mechanical pressing, thereby preventing the substrate 2 on the substrate holding surface 31 from warping or positional shifting.

[0023] The rotation shaft portion 32 extends downward from the center of the substrate holding portion 30 and is disposed vertically.

[0024] The rotation drive unit 34 rotates the substrate holding unit 30 by rotating the rotation shaft unit 32 about the vertical axis. The rotation drive unit 34 includes, for example, a rotation motor and a transmission mechanism for transmitting the rotational driving force of the rotation motor to the rotation shaft unit 32 .

[0025] The lifting drive unit 36 ​​lifts the substrate holding unit 30. The lifting drive unit 36 ​​is composed of, for example, a fluid pressure cylinder. The lifting drive unit 36 ​​lifts the substrate holding unit 30, for example, via the rotation drive unit 34. The lifting drive unit 36 ​​may lift the substrate holding unit 30 without the rotation drive unit 34. The lifting drive unit 36 ​​is an example of an adjustment mechanism.

[0026] The horizontal drive unit 38 moves the substrate holding unit 30 in a horizontal direction orthogonal to the center line of the rotating shaft unit 32, thereby relatively moving the gas nozzle 40 and the substrate holding unit 30 in the radial direction of the substrate 2. The horizontal drive unit 38 moves the substrate holding unit 30, for example, along a guide rail. The horizontal drive unit 38 may also move the substrate holding unit 30 by rotating an arm.

[0027] The gas nozzle 40 sprays gas toward the main surface 3 of the substrate 2 held by the substrate holding part 30. The gas nozzle 40 is arranged above the substrate holding part 30 so that the gas spray port 41 faces downward. The gas nozzle 40 is attached to the nozzle lifting drive part 50.

[0028] The nozzle lifting drive unit 50 lifts and lowers the gas nozzle 40. The nozzle lifting drive unit 50 is composed of, for example, a fluid pressure cylinder. The nozzle lifting drive unit 50 may also be composed of an electric motor and a ball screw for converting the rotational motion of the electric motor into the lifting motion of the gas nozzle 40. The nozzle lifting drive unit 50 is disposed on the upper wall surface 23 of the processing container 20. The nozzle lifting drive unit 50 is an example of an adjustment mechanism.

[0029] The gas supply mechanism 60 supplies gas to the gas nozzle 40. The gas supply mechanism 60 includes: a common line L1 whose downstream end is connected to the gas nozzle 40; a first branch line L2 extending from the upstream end of the common line L1 to the first supply source 61; and a second branch line L3 extending from the upstream end of the common line L1 to the second supply source 62.

[0030] The common line L1 is provided with a pressure regulating valve 63 for regulating the supply pressure P of the gas supplied to the gas nozzle 40. The pressure regulating valve 63 regulates the supply pressure P of the gas supplied to the gas nozzle 40 under the control of the control unit 150. A pressure booster such as a gas booster may be further provided at a position upstream of the pressure regulating valve 63 on the common line L1.

[0031] The first branch line L2 is provided with a first opening and closing valve 64 and a first flow rate regulating valve 65. When the first opening and closing valve 64 opens the flow path of the gas, the gas is supplied from the first supply source 61 to the gas nozzle 40. The first flow rate regulating valve 65 regulates the flow rate of the gas flowing in the first branch line L2. When the first opening and closing valve 64 closes the flow path of the gas, the supply of the gas from the first supply source 61 to the gas nozzle 40 is stopped.

[0032] The second branch line L3 is provided with a second on-off valve 66 and a second flow rate regulating valve 67. When the second on-off valve 66 opens the flow path of the gas, the gas is supplied from the second supply source 62 to the gas nozzle 40. The second flow rate regulating valve 67 regulates the flow rate of the gas flowing in the second branch line L3. When the second on-off valve 66 closes the flow path of the gas, the supply of the gas from the second supply source 62 to the gas nozzle 40 is stopped.

[0033] The first supply source 61 supplies, for example, carbon dioxide (CO2) gas to the gas nozzle 40. The second supply source 62 supplies, for example, hydrogen (H2) gas to the gas nozzle 40. The content C of the carbon dioxide gas contained in the gas supplied to the gas nozzle 40 is adjusted by the first flow regulating valve 65 and the second flow regulating valve 67. The first flow regulating valve 65 and the second flow regulating valve 67 adjust the content C of the carbon dioxide gas under the control of the control unit 150.

[0034] The decompression mechanism 70 decompresses the interior of the processing container 20. The decompression mechanism 70 includes a suction pump 71, a suction line 72, and a pressure regulating valve 73. The suction pump 71 sucks the gas inside the processing container 20. The suction line 72 extends from a suction port 27 formed on the lower wall surface 24 of the processing container 20 to the suction pump 71. The pressure regulating valve 73 is provided in the middle of the suction line 72.

[0035] The Schlieren device 80 generates an image (hereinafter referred to as a "Schlieren image") that visualizes the gas ejected from the gas nozzle 40 by the Schlieren method. The Schlieren device 80 includes a light source 81, a first Schlieren lens 82, a second Schlieren lens 83, a knife edge 84, and a camera unit 85. The light source 81, the knife edge 84, and the camera unit 85 are, for example, disposed outside the processing container 20. The light source 81, the knife edge 84, and the camera unit 85 may also be disposed inside the processing container 20. The first Schlieren lens 82 and the second Schlieren lens 83 are, for example, disposed on the side wall surface 25 of the processing container 20. The first Schlieren lens 82 and the second Schlieren lens 83 are disposed opposite to each other with the gas nozzle 40 sandwiched therebetween.

[0036] The light from the light source 81 is set as a parallel beam by the first Schlieren lens 82, and is focused by the second Schlieren lens 83 after passing through the gas ejected from the gas nozzle 40. The focused light is incident on the camera unit 85 through the blade 84. The camera unit 85 captures the light passing through the blade 84 and sends the captured image to the control unit 150. At this time, when the gas ejected from the gas nozzle 40 has uneven refractive index, the light is distorted and the focus is shifted, so the unevenness blocked by the blade 84 is displayed in the image in the form of a shadow. As a result, the pressure distribution and mass flow rate density distribution of the gas ejected from the gas nozzle 40 can be observed as a contrast between light and dark. For example, in the Schlieren image, as the pressure and mass flow rate density of the gas increase, it changes from white to black. The light source 81 is, for example, a point light source. The camera unit 85 is, for example, a camera.

[0037] The distance measuring unit 90 is provided above the substrate holding unit 30. The distance measuring unit 90 detects the distance from the distance measuring unit 90 to the main surface 3 of the substrate 2. For example, the distance measuring unit 90 detects the distance from the distance measuring unit 90 to the main surface 3 of the substrate 2 while moving along the main surface 3 of the substrate 2. In this case, the shape of the substrate 2, such as the warping of the substrate 2, can be detected. The distance measuring unit 90 is configured to be movable between a position directly above the center of the substrate holding unit 30 and a position directly above the outer periphery of the substrate holding unit 30, for example. The distance measuring unit 90 sends the detection value to the control unit 150. The distance measuring unit 90 can be, for example, a laser displacement meter. The distance measuring unit 90 is an example of a detection unit.

[0038] The gas receiving portion 100 is disposed inside the processing container 20. The gas receiving portion 100 is configured to be movable between a gas receiving position below the injection port 41 and a hiding position near the side wall surface 25. The gas receiving portion 100 receives the gas injected from the gas nozzle 40 at the gas receiving position to prevent the gas from being injected onto the main surface 3 of the substrate 2. The gas receiving portion 100 discharges the received gas to the outside of the processing container 20.

[0039] The control unit 150 is constituted by, for example, a computer. The control unit 150 includes a CPU (Central Processing Unit) 151 and a storage medium 152 such as a memory. The storage medium 152 stores a program for controlling various processes performed in the substrate processing apparatus 10. The control unit 150 controls the operation of the substrate processing apparatus 10 by causing the CPU 151 to execute the program stored in the storage medium 152. The control unit 150 includes an input interface 153 and an output interface 154. The control unit 150 receives a signal from the outside through the input interface 153 and sends a signal to the outside through the output interface 154.

[0040] In addition, the program may be stored in a computer-readable storage medium and installed from the storage medium to the storage medium 152 of the control unit 150. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card. The program may also be downloaded from a server via the Internet and installed in the storage medium 152 of the control unit 150.

[0041] Figure 2 4 is a cross-sectional view showing the impact of a vertical shock wave on a substrate according to an embodiment. The gas nozzle 40 is, for example, a nozzle generally called a Laval nozzle. The gas nozzle 40 has an injection port 41, a supply port 42, a throat 43, and a tapered hole 45. The throat 43 has a smaller diameter than the supply port 42. The tapered hole 45 is provided between the throat 43 and the injection port 41. The diameter of the tapered hole 45 increases as it goes from the throat 43 to the injection port 41.

[0042] The gas nozzle 40 is arranged inside the processing container 20. The inside of the processing container 20 is pre-depressurized by the decompression mechanism 70. The gas supplied to the supply port 42 of the gas nozzle 40 is accelerated to a speed exceeding the speed of sound by passing through the throat 43, and is ejected from the ejection port 41. The ejected gas forms a vertical shock wave SW. The vertical shock wave SW is also called a Mach disk. The vertical shock wave SW is a shock wave having a wave surface perpendicular to the propagation direction. The shock wave propagates at supersonic speed inside the processing container 20, and the pressure changes discontinuously.

[0043] The control unit 150 controls the impact of the gas on the substrate 2 held by the substrate holding unit 30. The impact of the gas on the substrate 2 varies according to, for example, the distance G1 between the injection port 41 of the gas nozzle 40 and the main surface 3 of the substrate 2.

[0044] Therefore, the control unit 150 controls the impact of the gas on the substrate 2 by adjusting the distance G1. The control unit 150 adjusts the distance G1 by, for example, controlling the lifting drive unit 36 ​​to lift the substrate holding unit 30. The control unit 150 may also adjust the distance G1 by controlling the nozzle lifting drive unit 50 to lift the gas nozzle 40. The control unit 150 may also adjust the distance G1 by controlling the lifting drive unit 36 ​​and the nozzle lifting drive unit 50 to lift the substrate holding unit 30 and the gas nozzle 40.

[0045] The controller 150 causes the vertical shock wave SW generated by the injection of the gas to hit the main surface 3 of the substrate 2. In this case, the vertical shock wave SW acts on the main surface 3 of the substrate 2, so that particles attached to the main surface 3 of the substrate 2 can be easily and efficiently removed.

[0046] The center line of the gas nozzle 40 can be arranged vertically relative to the main surface 3 of the substrate 2. The wavefront of the vertical shock wave SW hits the main surface 3 of the substrate 2 in parallel. In this case, the vertical shock wave SW acts on a wide range of the main surface 3 of the substrate 2, so that particles can be easily and efficiently removed. In addition, the pattern collapse of the concave-convex pattern on the main surface 3 of the substrate 2 can be suppressed.

[0047] The control unit 150 sets a target value of the distance G1 between the injection port 41 of the gas nozzle 40 and the main surface 3 of the substrate 2 based on the flow state of the gas injected from the gas nozzle 40 .

[0048] In one embodiment, the control unit 150 sets a target value for the distance G1 based on a pressure distribution of the gas or a mass flow rate density distribution of the gas calculated by simulation using environmental parameters. Environmental parameters include parameters that affect the flow state of the gas. Environmental parameters include, for example, a content C of carbon dioxide contained in the gas, a pressure of the gas, a flow rate of the gas, a temperature of the gas, a pressure inside the processing container 20, and a temperature inside the processing container 20. The pressure distribution of the gas and the mass flow rate density distribution of the gas are examples of the flow state of the gas. The control unit 150 sets a target value for the distance G1, for example, in such a manner that the main surface 3 of the substrate 2 is located at a position where the pressure of the gas is high or a position where the mass flow rate density of the gas is high. In this case, the vertical shock wave SW hits the main surface 3 of the substrate 2, so that it is easy and efficient to remove particles attached to the main surface 3 of the substrate 2.

[0049] In one embodiment, the control unit 150 sets a target value for the distance G1 based on a schlieren image obtained by photographing the gas ejected from the gas nozzle 40 using the schlieren device 80. The schlieren image is an example of the flow state of the gas. The control unit 150 analyzes the schlieren image, for example, to determine the position Z1 of the vertical shock wave SW, and sets the target value for the distance G1 based on the determined position Z1 of the vertical shock wave SW. The control unit 150 may also generate an image that visualizes the gas ejected from the gas nozzle 40 using a device different from the schlieren device 80.

[0050] Figure 3 It is a diagram showing an example of a distance adjustment method according to the embodiment. Figure 3 The upper figure of FIG. 1 is a diagram showing the positional relationship between the substrate 2 and the gas nozzle 40 when the distance G1 is not the target value.

[0051] Figure 3 The figure below is a diagram showing the positional relationship between the substrate 2 and the gas nozzle 40 when the distance G1 is the target value. Figure 3 In the upper and lower figures, the image on the left shows the schlieren image, and the image on the right shows the pressure distribution of the gas. Figure 3As shown in the upper and lower figures, in the Schlieren image, as the pressure of the gas increases, it changes from white to black.

[0052] For example, in Figure 3 As shown in the above figure, when the main surface 3 of the substrate 2 is located closer to the injection port 41 than the position Z1 of the vertical shock wave SW closest to the injection port 41 among the determined plurality of positions Z1 of the vertical shock wave SW, the control unit 150 adjusts the distance G1.

[0053] For example, the control unit 150 may Figure 3 As shown in the following figure, the target value of the distance G1 is set in such a way that the main surface 3 of the substrate 2 is located slightly farther than the position Z1 of the vertical shock wave SW closest to the injection port 41. In this case, the vertical shock wave SW hits the main surface 3 of the substrate 2, so that the particles attached to the main surface 3 of the substrate 2 can be easily and efficiently removed.

[0054] For example, control unit 150 may set the target value of distance G1 so that main surface 3 of substrate 2 is located slightly farther from vertical shock wave SW formed at a position farther from injection port 41 than vertical shock wave SW closest to injection port 41 .

[0055] When the gas cluster is used for processing, the substrate 2 is processed by arranging it at or near the position where the vertical shock wave SW is generated, and a gas with stronger energy can be irradiated to the substrate 2, so that particles can be removed efficiently. The gas cluster is, for example, an aggregate formed by the molecules of carbon dioxide gas bonded to each other by van der Waals force. By the gas cluster hitting the main surface 3 of the substrate 2, small-diameter particles (for example, tens of nanometers) attached to the main surface 3 of the substrate 2 can be removed efficiently.

[0056] The impact of the gas on the substrate 2 also changes depending on, for example, the content C of the carbon dioxide gas contained in the gas supplied to the gas nozzle 40 , the supply pressure P of the gas supplied to the gas nozzle 40 , and the like.

[0057] Therefore, the control unit 150 may also control the content C and the supply pressure P of the carbon dioxide gas to control the impact of the gas on the substrate 2 .

[0058] The composition of the gas supplied to the gas nozzle 40 (e.g., the content C of the carbon dioxide gas) is adjusted, for example, by the first flow regulating valve 65 and the second flow regulating valve 67. The gas supplied to the gas nozzle 40 may contain carbon dioxide gas. Carbon dioxide gas has a molecular weight greater than that of hydrogen gas, and therefore has a large mass flow rate density. The gas supplied to the gas nozzle 40 may also contain hydrogen gas. By containing hydrogen gas, it is easy to suppress the stall of the gas cluster. The supply pressure P of the gas supplied to the gas nozzle 40 is adjusted by the pressure regulating valve 63.

[0059] According to the substrate processing apparatus 10 described above, the control unit 150 sets a target value of the distance G1 based on the flow state of the gas ejected from the gas nozzle 40, and controls at least one of the lifting drive unit 36 ​​and the nozzle lifting drive unit 50 so that the distance G1 becomes the target value. Thus, particles can be removed efficiently according to the processing environment.

[0060] (Substrate processing method)

[0061] Reference Figure 4 A substrate processing method according to an embodiment will be described. Figure 4 1 is a flowchart showing a substrate processing method according to an embodiment. Figure 4 The steps S101 to S108 shown are performed under the control of the control unit 150. In one embodiment, the steps S101 to S108 are performed in this order.

[0062] In step S101, a target value of the distance G1 between the injection port 41 of the gas nozzle 40 and the main surface 3 of the substrate 2 is set. In step S101, the control unit 150 sets the target value of the distance G1 between the injection port 41 of the gas nozzle 40 and the main surface 3 of the substrate 2 based on the flow state of the gas injected from the gas nozzle 40. Step S101 is performed, for example, in a state where the substrate 2 is not held by the substrate holding unit 30.

[0063] In one embodiment, the control unit 150 sets the target value of the distance G1 based on the pressure distribution of the gas or the mass flow rate density distribution of the gas calculated by simulation using environmental parameters. In one embodiment, the control unit 150 sets the target value of the distance G1 based on the schlieren image obtained by photographing the gas ejected from the gas nozzle 40 by the schlieren device 80.

[0064] In step S102, the substrate 2 is arranged inside the processing container 20. In step S102, the transport device carries the substrate 2 from the outside of the processing container 20 to the inside of the processing container 20, and arranges the carried substrate 2 on the substrate holding surface 31 of the substrate holding part 30. The substrate holding part 30 holds the substrate 2 horizontally in a manner that the main surface 3 of the substrate 2 faces upward.

[0065] In step S103, the shape of the substrate 2 held by the substrate holding unit 30 is detected. In step S103, the distance measuring unit 90 detects the distance from the distance measuring unit 90 to the main surface 3 of the substrate 2. For example, the distance measuring unit 90 detects the distance to the main surface 3 of the substrate 2 while moving along the main surface 3 of the substrate 2. In this case, the shape of the substrate 2, such as the warping of the substrate 2, can be detected. The distance measuring unit 90 sends the detection value to the control unit 150.

[0066] In step S104, gas is ejected from the gas nozzle 40 disposed inside the processing container 20. In step S104, the decompression mechanism 70 sucks the gas inside the processing container 20, and the gas supply mechanism 60 supplies gas to the gas nozzle 40. The composition of the gas supplied to the gas nozzle 40 (for example, the content C of the carbon dioxide gas) is adjusted by the first flow rate adjustment valve 65 and the second flow rate adjustment valve 67. The supply pressure P of the gas supplied to the gas nozzle 40 is adjusted by the pressure adjustment valve 63.

[0067] In step S105, the vertical shock wave SW is formed by the injection of the gas. The region where the vertical shock wave SW is formed is discontinuous, and there is a region where the vertical shock wave SW is not formed.

[0068] In step S106, the vertical shock wave SW is made to hit the main surface 3 of the substrate 2. The wavefront of the vertical shock wave SW can be made to hit in parallel with the main surface 3 of the substrate 2. In this case, the vertical shock wave SW acts on a wide range of the main surface 3 of the substrate 2. In addition, the pattern collapse of the concavo-convex pattern on the main surface 3 of the substrate 2 can be suppressed.

[0069] In step S107 , particles are removed. In step S107 , the vertical shock wave SW separates the particles from the main surface 3 of the substrate 2 by its pressure.

[0070] The above-mentioned steps S104 to S107 are repeatedly performed while changing the position where the substrate 2 is hit by the vertical shock wave SW. The position change is performed, for example, by rotating the substrate holding portion 30 by the rotation drive portion 34 while moving the gas nozzle 40 in the radial direction of the substrate 2 by the nozzle lifting drive portion 50. The vertical shock wave SW can hit the entire main surface 3 of the substrate 2.

[0071] In one embodiment, the position where the substrate 2 is hit by the vertical shock wave SW is changed by rotating the substrate holding portion 30 and moving it in the horizontal direction. The position where the substrate 2 is hit by the vertical shock wave SW can also be changed by moving the gas nozzle 40 in the X-axis direction and the Y-axis direction while the substrate holding portion 30 is fixed.

[0072] In the above steps S104 to S107, the control unit 150 may control the distance G1 based on the shape of the substrate 2 detected in step S103. In this case, even if the substrate 2 is deformed such as warping, the vertical shock wave SW can be made to strike the entire main surface 3 of the substrate 2 uniformly.

[0073] In addition, in the above-mentioned steps S104 to S107, the target value of the distance G1 may be reset. The control unit 150 may reset the target value of the distance G1 based on the flow state of the gas ejected from the gas nozzle 40 while ejecting gas from the gas nozzle 40, and control the distance G1 so that the distance G1 becomes the reset target value. In this case, even if the flow state of the gas changes in the middle of ejecting the gas from the gas nozzle 40, the target value of the distance G1 can be reset in real time so that the removal efficiency of the particles becomes higher. The control unit 150 may reset the target value of the distance G1 based on the pressure distribution of the gas or the mass flow rate density distribution of the gas calculated by simulation using environmental parameters, for example, as in step S101. The control unit 150 may reset the target value of the distance G1 based on the schlieren image captured by the schlieren device 80 in the state where the gas is ejected from the gas nozzle 40, for example, as in step S101.

[0074] In step S108, the substrate 2 is carried out from the inside of the processing container 20 to the outside of the processing container 20. In step S108, the substrate holding portion 30 releases the holding of the substrate 2, and the transfer device receives the substrate 2 from the substrate holding portion 30 and carries the received substrate 2 out of the processing container 20.

[0075] According to the substrate processing method described above, the target value of the distance G1 is set based on the flow state of the gas ejected from the gas nozzle 40, and at least one of the lifting drive unit 36 ​​and the nozzle lifting drive unit 50 is controlled so that the distance G1 reaches the target value. In this way, particles can be removed efficiently according to the processing environment.

[0076] Additionally, you can change Figure 4 101 to S108. For example, step S101 may be performed after step S102. In this case, the gas is ejected from the gas nozzle 40 while the substrate 2 is held by the substrate holding portion 30. Therefore, the gas receiving portion 100 may be moved to a gas receiving position below the ejection port 41 to prevent the gas ejected from the gas nozzle 40 from being ejected to the main surface 3 of the substrate 2. For example, step S103 may be performed in parallel with the execution of steps S104 to S107.

[0077] Alternatively, you may not implement Figure 4Part of the steps S101 to S108 shown in the figure. For example, when the target value of the distance G1 is set in the steps S104 to S107, the step S101 may not be performed. For example, when the step S101 is performed, the target value of the distance G1 may not be reset in the steps S104 to S107. For example, when the substrate 2 held by the substrate holding portion 30 does not have deformation such as warping, the step S103 may not be performed.

[0078] The embodiments disclosed herein are illustrative in all respects and should not be construed as restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the appended claims and the gist thereof.

[0079] This international application claims the priority based on Japanese Patent Application No. 2022-139192 filed on September 1, 2022, and all the contents of that application are incorporated herein by reference.

[0080] Description of Reference Numerals

[0081] 2: substrate; 10: substrate processing device; 20: processing container; 30: substrate holding part; 40: gas nozzle; 36: lifting drive part; 50: nozzle lifting drive part; 150: control part.

Claims

1. A substrate processing device, comprising: Handling containers; A substrate holding portion, which is disposed inside the processing container and is used to hold a substrate; a gas nozzle that sprays gas into the interior of the processing container; an adjustment mechanism for adjusting a distance between the gas nozzle and the substrate held by the substrate holding portion; as well as Control Department, Here, the control unit is configured to set a target value for the distance based on a flow state of the gas ejected from the gas nozzle, and control the adjustment mechanism so that the distance reaches the target value.

2. The substrate processing apparatus according to claim 1, wherein: The control unit is configured to calculate the flow state of the gas by simulation using an environmental parameter that affects the flow state of the gas.

3. The substrate processing apparatus according to claim 1, wherein: The control unit is configured to acquire a flow state of the gas by imaging the gas ejected from the gas nozzle.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein: The control unit is configured to control the adjustment mechanism while causing the gas nozzle to spray the gas toward the substrate held by the substrate holding unit.

5. The substrate processing apparatus according to any one of claims 1 to 3, wherein: The control unit is configured to control the adjustment mechanism in a state where the substrate is not held by the substrate holding unit.

6. The substrate processing apparatus according to claim 1, wherein: further comprising a detection unit configured to detect a shape of the substrate held by the substrate holding unit, The control unit is configured to control the adjustment mechanism based on the shape of the substrate detected by the detection unit.

7. The substrate processing apparatus according to claim 1, wherein: The gas includes carbon dioxide gas and hydrogen gas.

8. A substrate processing method, comprising the following steps: holding the substrate on a substrate holding portion disposed inside the processing container; injecting gas from a gas nozzle disposed inside the processing container; setting a target value of a distance between the gas nozzle and the substrate held by the substrate holding portion based on a flow state of the gas ejected from the gas nozzle; and The distance is controlled so that the distance becomes the target value.

9. The substrate processing method according to claim 8, wherein: The step of setting includes calculating the flow state of the gas by simulation using environmental parameters that affect the flow state of the gas.

10. The substrate processing method according to claim 8, wherein: The step of performing the setting includes acquiring a flow state of the gas by imaging the gas ejected from the gas nozzle.

11. The substrate processing method according to any one of claims 8 to 10, wherein: The step of performing the setting is performed while the gas is ejected from the gas nozzle toward the substrate held on the substrate holding portion.

12. The substrate processing method according to any one of claims 8 to 10, wherein: The step of performing the setting is performed in a state where the substrate is not held by the substrate holding portion.

13. The substrate processing method according to claim 8, wherein: The method further includes the step of detecting the shape of the substrate held by the substrate holding portion, The step of controlling includes controlling the distance based on the shape of the substrate detected in the step of detecting.

14. The substrate processing method according to claim 8, wherein: The gas includes carbon dioxide gas and hydrogen gas.

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