Micro-nano structure processing method and system and micro-nano structure

Abstract

According to the micro-nano structure machining method and system and the micro-nano structure, micro-nano structure direct writing is conducted on a to-be-machined part fixed to a machining table through ultrafast laser, so that the micro-nano structure is formed on the surface of a semi-finished product, the semi-finished product is obtained, the surface of the semi-finished product at the moment is provided with a boundary modification layer, a splashed material and a rough structure, and the surface of the semi-finished product is coated with a coating. And the surface of the semi-finished product is polished through ion beam polishing treatment and a physical polishing method of physical bombardment, so that a boundary modified layer, a splashed material and a rough structure on the surface of the semi-finished product are eliminated, and a new material layer is not generated. The ultrafast laser and the ion beam polishing technology are combined, the ultrafast laser is used for conveniently machining the fine micro-nano structure on the surface of the workpiece to be machined, the ion beam polishing means is used, the surface of a finished product is flat and smooth, and the problems that in the prior art, chemical etching is adopted, consequently, a metamorphic layer is generated, geometrical characteristics of the micro-nano structure are changed, and machining precision is poor are solved. And the structural precision is influenced.

Description

Technical Field

[0001] The present invention belongs to the technical field of micro-nano structure processing, and specifically relates to a micro-nano structure processing method, system and micro-nano structure. Background Art

[0002] Micro-nano structures refer to structures with sizes ranging from micrometers to nanometers. Due to their unique physical and chemical properties, these structures have shown great application potential in new energy materials, nanoelectronics, biomedical engineering and other fields.

[0003] Laser micro-nano processing is a special ultra-fine processing technology that can easily process fine micro-nano structures on the surface of materials. With its advantages of high precision, high efficiency and large area, laser micro-nano processing technology has received widespread attention in the field.

[0004] During the laser processing of micro-nano structures, a large amount of material splashing and rough structures will be produced due to the surface ablation effect. At the same time, when using laser direct writing of micro-nano structures, it will inevitably affect the materials in the adjacent areas, thereby causing boundary modification layer problems. These problems seriously hinder the application of laser in micro-nano structure processing.

[0005] In the prior art, chemical etching using hydrofluoric acid or the like is generally used to eliminate the boundary modification layer, the splashed material and the rough structure. Although chemical etching can eliminate the boundary modification layer, the splashed material and the rough structure to a certain extent, a metamorphic layer will inevitably be produced during the chemical etching process, thereby changing the geometric characteristics of the micro-nano structure, which will still have an adverse effect on the use of the micro-nano structure. Summary of the invention

[0006] In order to solve the technical problem in the background technology that after laser processing of a micro-nano structure, chemical etching is used to eliminate the boundary modification layer, the splashed material and the rough structure, which will lead to the generation of a metamorphic layer, thereby changing the geometric characteristics of the micro-nano structure and still having an adverse effect on the use of the micro-nano structure, the present invention provides a micro-nano structure processing method, system and micro-nano structure.

[0007] In order to achieve the above object, the present invention adopts the following technical solution:

[0008] In a first aspect, the present invention provides a micro-nano structure processing method, the micro-nano structure processing method comprising:

[0009] S1: Determine the laser parameters of the required ultrafast laser according to the processing requirements of the micro-nano structure;

[0010] S2: The workpiece to be processed is fixedly installed, and the laser parameters of the ultrafast laser are adjusted to focus the ultrafast laser on the surface of the workpiece to be processed; micro-nano structure processing is performed on the surface of the workpiece to be processed by the ultrafast laser to obtain a semi-finished product;

[0011] S3: The surface of the semi-finished product is subjected to ion beam polishing to obtain a finished product with a micro-nano structure.

[0012] Optionally, the step S1 specifically includes determining laser parameters of the ultrafast laser according to target parameters of the micro-nano structure to be processed, wherein the laser parameters of the ultrafast laser include light field intensity distribution and time domain parameters of the ultrafast laser.

[0013] Optionally, step S3 specifically includes:

[0014] S3.1: Obtain the morphological and chemical characteristics of the semi-finished product surface;

[0015] S3.2: Obtain polishing parameters according to the morphological characteristics and chemical characteristics of the surface of the semi-finished product and the target parameters of the micro-nano structure, and adjust the ion beam parameters according to the polishing parameters;

[0016] S3.3: Perform ion beam polishing on the surface of the semi-finished product to obtain a finished product with a micro-nano structure.

[0017] Optionally, in step S3.1, the acquired morphological features of the semi-finished product surface include: two-dimensional morphology, three-dimensional morphology and boundary modification layer information of the semi-finished product surface;

[0018] The chemical characteristics of the semi-finished product surface obtained include: the degree of modification of the material when the ultrafast laser performs micro-nanostructuring on the surface of the workpiece to be processed;

[0019] The polishing parameters include: material removal thickness, material removal efficiency and removal rate.

[0020] Optionally, the ion beam parameters adjusted in step S3.2 include ion beam irradiation time, ion beam current size and ion beam incident angle.

[0021] Optionally, when adjusting the ion beam parameters in step S3.2, the ion beam irradiation time is proportional to the material removal thickness; the ion beam current is proportional to the material removal efficiency; and the ion beam incident angle is proportional to the removal rate.

[0022] Optionally, the step S2 specifically includes:

[0023] S2.1: Fix and install the workpiece to be processed;

[0024] S2.2: adjusting the laser parameters of the ultrafast laser according to the required laser parameters of the ultrafast laser; and adjusting the ultrafast laser beam using a laser shaping module on the optical path of the ultrafast laser so that the ultrafast laser is focused on the surface of the workpiece to be processed;

[0025] S2.3: Use ultrafast laser to process micro-nano structures on the surface of the workpiece to obtain a semi-finished product.

[0026] Optionally, in step S3, argon gas is used as the polishing gas when ion beam polishing is performed on the semi-finished product.

[0027] In a second aspect, the present invention further provides a micro-nano structure processing system, which is used for any of the micro-nano structure processing methods described above, comprising:

[0028] Lasers, processing tables, and ion polishers;

[0029] The laser is movably arranged above the processing table;

[0030] The processing table is used to fix and install the workpiece to be processed;

[0031] The laser is used to output ultrafast laser to perform micro-nano structure processing on the surface of the workpiece to be processed, so that the workpiece to be processed becomes a semi-finished product;

[0032] The ion polishing device is used to perform ion beam polishing on semi-finished products to obtain finished products with micro-nano structures.

[0033] In a third aspect, the present invention further provides a micro-nano structure, which is generated based on any one of the micro-nano structure processing methods described above.

[0034] The beneficial effects of the present invention are:

[0035] The present invention provides a micro-nano structure processing method, wherein an ultrafast laser is used to directly write the micro-nano structure on a workpiece to be processed fixed on a processing table, thereby forming a micro-nano structure on the surface of a semi-finished product to obtain a semi-finished product, wherein the surface of the semi-finished product has a boundary modification layer, splashed materials and a rough structure, and the surface of the semi-finished product is polished by an ion beam polishing process, using a physical polishing method of physical bombardment to polish the surface of the semi-finished product, thereby eliminating the boundary modification layer, splashed materials and rough structure on the surface of the semi-finished product, and no new material layer is generated. In the present invention, ultrafast laser and ion beam polishing technology are combined, and a fine micro-nano structure is conveniently processed on the surface of the workpiece to be processed by using an ultrafast laser, and the surface of the finished product is made flat and smooth by using ion beam polishing means, and the technical problem of chemical etching in the prior art causing a metamorphic layer, changing the geometric characteristics of the micro-nano structure, and affecting the structural accuracy is avoided. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1is a schematic diagram of the micro-nano structure processing method of the present invention;

[0037] Figure 2 It is a process schematic diagram of the micro-nano structure processing method of the present invention;

[0038] Figure 3 It is a schematic diagram of a semi-finished product in the present invention;

[0039] Figure 4 It is a schematic diagram of the finished product obtained after ion beam polishing in the present invention. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means intended to limit the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0041] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit exemplary embodiments according to the present invention. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprising" and / or "including" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0042] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present invention. At the same time, it should be clear that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, method and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, method and equipment should be considered as a part of the specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, so that once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0043] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention: the directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0044] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0045] The present invention provides a micro-nano structure processing method for processing the micro-nano structure. The micro-nano structure processing method provided by the present invention will be described below in conjunction with embodiments.

[0046] Example 1

[0047] See also Figure 1 , Figure 2 , Figure 3 and Figure 4 , showing a schematic diagram of a micro-nano structure processing method in the present invention, the micro-nano structure processing method comprises:

[0048] S1: Determine the laser parameters of the required ultrafast laser according to the processing requirements of the micro-nano structure;

[0049] S2: The workpiece to be processed is fixedly installed, and the laser parameters of the ultrafast laser are adjusted to focus the ultrafast laser on the surface of the workpiece to be processed; micro-nano structure processing is performed on the surface of the workpiece to be processed by the ultrafast laser to obtain a semi-finished product;

[0050] S3: The surface of the semi-finished product is subjected to ion beam polishing to obtain a finished product with a micro-nano structure.

[0051] In this embodiment, a micro-nano structure processing method is provided, wherein an ultrafast laser is used to directly write the micro-nano structure on a workpiece to be processed fixed on a processing table, thereby forming a micro-nano structure on the surface of a semi-finished product to obtain a semi-finished product, wherein the surface of the semi-finished product has a boundary modification layer, splashed materials and a rough structure, and the surface of the semi-finished product is polished by an ion beam polishing process, using a physical polishing method of physical bombardment to polish the surface of the semi-finished product, thereby eliminating the boundary modification layer, splashed materials and rough structure on the surface of the semi-finished product, and no new material layer is generated. In the present invention, ultrafast laser and ion beam polishing technology are combined, and ultrafast laser is used to conveniently process fine micro-nano structures on the surface of the workpiece to be processed, and ion beam polishing is used to make the surface of the finished product flat and smooth, and the technical problem of chemical etching in the prior art causing the generation of a metamorphic layer, changing the geometric characteristics of the micro-nano structure, and affecting the structural accuracy is avoided.

[0052] Optionally, step S1 in the present invention specifically includes determining laser parameters of the ultrafast laser according to target parameters of the micro-nano structure to be processed, wherein the laser parameters of the ultrafast laser include light field intensity distribution and time domain parameters of the ultrafast laser.

[0053] Optionally, step S3 specifically includes:

[0054] S3.1: Obtain the morphological and chemical characteristics of the semi-finished product surface;

[0055] S3.2: Obtain polishing parameters according to the morphological characteristics and chemical characteristics of the surface of the semi-finished product and the target parameters of the micro-nano structure, and adjust the ion beam parameters according to the polishing parameters;

[0056] S3.3: Perform ion beam polishing on the surface of the semi-finished product to obtain a finished product with a micro-nano structure.

[0057] In this embodiment, after obtaining the morphological characteristics and chemical characteristics of the surface of the semi-finished product, the morphological characteristics and chemical characteristics of the surface of the semi-finished product are compared with the target parameters of the micro-nano structure to determine the polishing parameters of the ion beam polishing process. The ion beam parameters are adjusted according to the polishing parameters so that the micro-nano structure of the finished product after polishing meets the target parameters, thereby ensuring the structural accuracy of the micro-nano structure.

[0058] Optionally, in step S3.1 of the present invention, the acquired morphological features of the semi-finished product surface include: two-dimensional morphology, three-dimensional morphology and boundary modification layer information of the semi-finished product surface;

[0059] The chemical characteristics of the semi-finished product surface obtained include: the degree of modification of the material when the ultrafast laser performs micro-nanostructuring on the surface of the workpiece to be processed;

[0060] The polishing parameters include: material removal thickness, material removal efficiency and removal rate.

[0061] Furthermore, the two-dimensional morphology of the semi-finished product surface can be obtained through an optical microscope or a scanning electron microscope; the three-dimensional morphology can be obtained through an atomic force microscope, a transmission electron microscope, etc.; the boundary modification layer information can be obtained through a scanning electron microscope, an ion image test or a spectral analysis; the chemical characteristics of the obtained semi-finished product surface can be obtained through a spectral analysis; based on the obtained two-dimensional morphology, three-dimensional morphology and boundary modification layer information of the semi-finished product surface, combined with the target parameters of the micro-nano structure, the material removal thickness, material removal efficiency and removal rate in the polishing parameters are adjusted.

[0062] Optionally, the ion beam polishing parameters adjusted in step S3.2 of the present invention include ion beam irradiation time, ion beam current size and ion beam incident angle.

[0063] Optionally, when adjusting the ion beam parameters in step S3.2 of the present invention, the ion beam irradiation time is proportional to the material removal thickness; the ion beam current size is proportional to the material removal efficiency; and the ion beam incident angle is proportional to the removal rate.

[0064] In this embodiment, based on the relationship between polishing parameters and ion beam parameters, namely, the ion beam irradiation time is proportional to the material removal thickness; the ion beam current is proportional to the material removal efficiency; the ion beam incident angle is proportional to the removal rate, the ion beam parameters are adjusted so that after the semi-finished product is ion beam polished, the actual parameters of the micro-nano structure can reach the target parameter standards.

[0065] Furthermore, the ion beam parameters can be adjusted so that the ion beam can adjust the micro-nano structure during the polishing process.

[0066] For example, if a Wiener structure point array is obtained after ultrafast laser single pulse processing, if it needs to be used as a 130-degree microlens array, a 130-degree lens can be obtained by ion beam polishing with an ion beam current of 7kev, an ion beam incident angle of 5 degrees, and an ion beam irradiation time of 50 minutes.

[0067] Furthermore, in actual use, the staff can also obtain the ion beam parameters required for ion beam polishing through experimental polishing tests.

[0068] Optionally, step S2 of the present invention specifically includes:

[0069] S2.1: Fix and install the workpiece to be processed;

[0070] S2.2: adjusting the laser parameters of the ultrafast laser according to the required laser parameters of the ultrafast laser; and adjusting the ultrafast laser beam using a laser shaping module on the optical path of the ultrafast laser so that the ultrafast laser is focused on the surface of the workpiece to be processed;

[0071] S2.3: Use ultrafast laser to process micro-nano structures on the surface of the workpiece to obtain a semi-finished product.

[0072] In this embodiment, the micro-nano structure processing of the workpiece by ultrafast laser has the advantages of high precision, high efficiency, large area, etc. The present invention also uses a laser shaping module to adjust the laser beam so that the ultrafast laser is focused on the surface of the workpiece.

[0073] Furthermore, the ultrafast laser in this embodiment is a single-pulse ultrafast laser.

[0074] Optionally, when ion beam polishing is performed on the semi-finished product in the present invention, argon gas is used as the polishing gas.

[0075] In this embodiment, when the semi-finished product is ion-beam polished, the semi-finished product is placed in a vacuum chamber in an ion polisher, argon gas is injected into the vacuum chamber, discharge is generated through electrodes, and argon ions are decomposed as ion sources, which are accelerated and focused by an optical grid system to form an ion beam with a Gaussian distribution. This ion beam acts on the surface of the semi-finished product, causing sputtering, etc., knocking out surface atoms, thereby removing the boundary modification layer, sputtered materials and rough structure problems generated after ultrafast laser processing.

[0076] In this embodiment, ultrafast laser selective processing is combined with ion beam polishing technology to achieve high-quality and low-defect processing of the surface of micro-nano structures, which can meet optical design requirements such as anti-reflection, hydrophobicity, and super-surfaces, and has positive significance in the application field of micro-nano structures.

[0077] Example 2

[0078] In a second aspect, the present invention further provides a micro-nano structure processing system, which is used in any one of the micro-nano structure processing methods in Example 1, comprising:

[0079] Lasers, processing tables, and ion polishers;

[0080] The laser is actively arranged above the processing table;

[0081] The processing table is used to fix and install the workpiece to be processed;

[0082] The laser is used to output ultrafast laser to perform micro-nano structure processing on the surface of the workpiece to be processed, so that the workpiece to be processed becomes a semi-finished product;

[0083] The ion polisher is used to perform ion beam polishing on semi-finished products to obtain finished products with micro-nano structures.

[0084] In this embodiment, a micro-nano structure processing system is provided. It should be noted that the micro-nano structure processing system in this embodiment corresponds to the micro-nano structure processing method in Example 1, and its usage and beneficial effects are also the same, which will not be described in detail here. The micro-nano structure processing system provided in this embodiment avoids the technical problem of using chemical etching in the prior art to produce a degenerate layer, change the geometric characteristics of the micro-nano structure, and affect the structural accuracy.

[0085] Furthermore, the processing table can be a three-dimensional displacement platform, which can realize micrometer-scale movement in the three axes of X, Y, and Z to accurately move the workpiece to be processed, facilitating the processing of micro-nano structures by ultrafast laser.

[0086] Furthermore, the ion polisher can be specifically selected as a Leica ion polisher, which uses a three-ion beam of argon with a high current density to polish the laser-processed sample.

[0087] Example 3

[0088] In a third aspect, the present invention further provides a micro-nano structure, which is generated according to any one of the micro-nano structure processing methods provided in Example 1.

[0089] The introduction of the micro-nano structure processing method can refer to Example 1, and for the purpose of brevity, no detailed introduction is given in this example. The specific style structure of the micro-nano structure is also well known to those skilled in the art, and will not be elaborated in detail here.

[0090] The micro-nano structure provided by the present invention is prepared by the micro-nano structure processing method of the present invention, so that chemical etching can avoid the generation of a degenerate layer, thereby making the micro-nano structure have higher precision and can meet the technical requirements required in this field, which has positive significance for the development and application of micro-nano structures.

Claims

1. A micro-nano structure processing method, characterized in that: The micro-nano structure processing method comprises: S1: Determine the laser parameters of the required ultrafast laser according to the processing requirements of the micro-nano structure; S2: The workpiece to be processed is fixedly installed, and the laser parameters of the ultrafast laser are adjusted to focus the ultrafast laser on the surface of the workpiece to be processed; micro-nano structure processing is performed on the surface of the workpiece to be processed by the ultrafast laser to obtain a semi-finished product; S3: The surface of the semi-finished product is subjected to ion beam polishing to obtain a finished product with a micro-nano structure.

2. The micro-nano structure processing method according to claim 1, characterized in that: The step S1 specifically includes determining the laser parameters of the ultrafast laser according to the target parameters of the micro-nano structure to be processed, wherein the laser parameters of the ultrafast laser include the light field intensity distribution and time domain parameters of the ultrafast laser.

3. The micro-nano structure processing method according to claim 1, characterized in that: Step S3 specifically includes: S3.1: Obtain the morphological and chemical characteristics of the semi-finished product surface; S3.2: Obtain polishing parameters according to the morphological characteristics and chemical characteristics of the surface of the semi-finished product and the target parameters of the micro-nano structure, and adjust the ion beam parameters according to the polishing parameters; S3.3: Perform ion beam polishing on the surface of the semi-finished product to obtain a finished product with a micro-nano structure.

4. The micro-nano structure processing method according to claim 3, characterized in that: In the step S3.1, the acquired morphological features of the semi-finished product surface include: the two-dimensional morphology, the three-dimensional morphology and the boundary modification layer information of the semi-finished product surface; The chemical characteristics of the semi-finished product surface obtained include: the degree of modification of the material when the ultrafast laser performs micro-nanostructuring on the surface of the workpiece to be processed; The polishing parameters include: material removal thickness, material removal efficiency and removal rate.

5. The micro-nano structure processing method according to claim 4, characterized in that: The ion beam parameters adjusted in step S3.2 include ion beam irradiation time, ion beam current size and ion beam incident angle.

6. The micro-nano structure processing method according to claim 5, characterized in that: When adjusting the ion beam parameters in step S3.2, the ion beam irradiation time is proportional to the material removal thickness; the ion beam current is proportional to the material removal efficiency; and the ion beam incident angle is proportional to the removal rate.

7. The micro-nano structure processing method according to claim 1, characterized in that: The step S2 specifically includes: S2.1: Fix and install the workpiece to be processed; S2.2: adjusting the laser parameters of the ultrafast laser according to the required laser parameters of the ultrafast laser; and adjusting the ultrafast laser beam using a laser shaping module on the optical path of the ultrafast laser so that the ultrafast laser is focused on the surface of the workpiece to be processed; S2.3: Use ultrafast laser to process micro-nano structures on the surface of the workpiece to obtain a semi-finished product.

8. The micro-nano structure processing method according to claim 1, characterized in that: In the step S3, argon gas is used as the polishing gas when the semi-finished product is subjected to ion beam polishing.

9. A micro-nano structure processing system, used in the micro-nano structure processing method according to any one of claims 1 to 8, characterized in that: include: Lasers, processing tables, and ion polishers; The laser is movably arranged above the processing table; The processing table is used to fix and install the workpiece to be processed; The laser is used to output ultrafast laser to perform micro-nano structure processing on the surface of the workpiece to be processed, so that the workpiece to be processed becomes a semi-finished product; The ion polishing device is used to perform ion beam polishing on semi-finished products to obtain finished products with micro-nano structures.

10. A micro-nano structure, characterized in that: The micro-nano structure is generated based on the micro-nano structure processing method according to any one of claims 1 to 8.

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