A single crystal furnace slag sticking machine

Abstract

This invention belongs to the field of single-crystal silicon manufacturing technology, specifically a slag-adhesive machine for a single-crystal furnace, including a slag-lifting structure. The slag-lifting structure includes: two fixed rods located inside a container near the quartz crucible; and a sliding rod fixedly connected inside the fixed rods. By setting up electrode posts and sliding rods, when the silicon raw material is melted in the quartz crucible, the electrode posts are also inside the quartz crucible and are held in place by a connecting plate at the upper end of the fixed rods, heating synchronously with the quartz crucible. Subsequently, when the silicon raw material melts into molten silicon and impurities float on the surface, the electrode posts move downwards. When the electrode posts extend into the molten silicon, the conductive ball below the conductive strip contacts the conductive ball above the compression spring, and the compression spring is compressed, causing the copper sheet to contact the contact plate, resulting in automatic discharge from the electrode posts. This allows the adsorption column below the electrode posts to adsorb impurities from the molten silicon.

Description

Technical Field

[0001] This invention belongs to the field of single crystal silicon manufacturing technology, specifically a single crystal furnace slag adhesion machine. Background Technology

[0002] A slag-binding machine for a single crystal furnace is a key piece of equipment used in the manufacturing process of single crystal silicon. It is mainly used to remove impurities floating in the molten silicon inside the single crystal furnace. Because impurities floating on the surface of the molten silicon after melting directly affect the survival rate of the crystals during the manufacturing process of single crystal silicon, the slag-binding process of binding the impurities floating in the molten silicon inside the single crystal furnace and removing them from the furnace is an essential and critical process. This slag-binding machine is generally installed inside the single crystal furnace and used in conjunction with the single crystal furnace.

[0003] A patent application with publication number CN115369476B discloses a slag-adhesion device for a single crystal furnace, including a slag-adhesion carrier, a lifting joint, and a connecting rod. The lifting joint is connected to the lifting mechanism of the single crystal furnace, and the connecting rod is located between the lifting joint and the slag-adhesion carrier. This solution makes the slag-adhesion operation more convenient, shortens the slag-adhesion time, and reduces the risk of slag adhesion. It not only helps to reduce costs and increase efficiency, but also helps to increase the yield of crystal pulling.

[0004] The above-mentioned solution still has some problems in practical application. When using this device to bind and remove impurities floating in the molten silicon inside the single crystal furnace, after the silicon raw material melts into the molten silicon, the slag carrier is moved below into the already melted molten silicon. Through the temperature difference between the molten silicon and the slag carrier, the impurities are quickly gathered on the slag carrier, thus transferring the impurities out. However, since the silicon raw material is placed in a crucible to melt into molten silicon, after melting, in order to reduce the impact of heat and reduce volatilization loss, it is necessary to ensure the sealing of the crucible. However, when the above-mentioned device is inserted into the molten silicon, the sealing cover located above the crucible needs to be opened to reach the inside of the crucible, which affects the sealing of the inside of the crucible. Furthermore, slag binding through temperature difference also has certain requirements for the working environment, which makes the slag binding work more complicated.

[0005] Therefore, the present invention provides a slag-adhesion machine for single crystal furnaces. Summary of the Invention

[0006] In order to overcome the shortcomings of the prior art, at least one technical problem raised in the background art is solved.

[0007] The technical solution adopted by this invention to solve its technical problem is as follows: A single crystal furnace slag-adhesive machine, as described in this invention, is used in conjunction with a container inside the single crystal furnace. A quartz crucible is placed inside the container, and a crystal pulling structure is provided at the upper end of the container. The crystal pulling structure includes a furnace cover and a slag-lifting structure. The slag-lifting structure includes: a fixed rod, with two fixed rods located inside the container near the quartz crucible; a sliding rod, fixedly connected inside the fixed rod; a thread, the thread being formed on the arc surface of the sliding rod; a rotating ring, slidably connected to the surface of the sliding rod, and threadedly connected to the thread after movement; an electrode post, located at the eccentric position at the lower end of the rotating ring; and an adsorption post, located at the lower end of the electrode post.

[0008] Preferably, the slag removal structure further includes: a lifting frame, which is slidably connected inside the sliding rod and rotatably connected to the rotating ring; a connecting plate, which is disposed at the upper end of the lifting frame; and a conductive strip, which is disposed at one end of the rotating ring and the other end of the rotating ring is connected to the electrode post.

[0009] Preferably, the fixing rod has a contact piece inside, and a copper sheet is provided at one end of the fixing rod near the contact piece. The copper sheet is placed at an angle and contacts the contact piece during operation. A compression spring is provided at the upper end of the copper sheet, and a conductive ball is provided at the upper end of the compression spring. The conductive ball is slidably connected inside the fixing rod, and a conductive ball is also provided at the lower end of the conductive strip.

[0010] Preferably, the furnace cover is provided with a telescopic cylinder inside, and the telescopic cylinder is provided with a snap-fit ​​ball at one end near the connecting plate. The upper end of the connecting plate is provided with a buckle, and the snap-fit ​​ball is snapped into the inner wall of the buckle.

[0011] Preferably, the connecting plate has a coil spring inside, one end of the coil spring has a placement plate, and the fixing rod has a limiting strip inside the end near the placement plate.

[0012] Preferably, a temporary storage frame is provided inside the container near the end of the quartz crucible, and a scraping frame is provided inside the temporary storage frame, with the inner wall of the scraping frame in contact with the adsorption column.

[0013] Preferably, an abutment plate is rotatably connected to the end of the scraping frame, and a rotating column is rotatably connected inside the scraping frame. One end of the rotating column is provided with a cleaning column, and the cleaning column contacts the adsorption column during operation.

[0014] Preferably, the rotating column has a sliding arm at one end near the cleaning column, and the cleaning column slides on the surface of the sliding arm. The surface of the sliding arm is provided with an adjusting spring, and one end of the adjusting spring is connected to the rotating column.

[0015] Preferably, the surface of the abutment plate is provided with an abutment groove, and the abutment groove is in contact with the adsorption column.

[0016] Preferably, one end of the abutment plate is provided with a return spring, and the other end of the return spring is connected to the scraping frame.

[0017] The beneficial effects of this invention are as follows:

[0018] 1. The single crystal furnace slag adsorption machine of the present invention, by setting an electrode column and a sliding rod, when the silicon raw material is melted in the quartz crucible, the furnace cover will move to the upper end of the quartz crucible to keep the inside of the quartz crucible sealed. At this time, the electrode column will also be inside the quartz crucible and clamped to the upper end of the fixed rod by the connecting plate, and will be heated synchronously with the quartz crucible. Then, when the silicon raw material melts into silicon liquid and impurities float on the surface, the telescopic cylinder will be activated. The telescopic cylinder will be clamped with the connecting plate and drive the connecting plate to move downward. At this time, the electrode column will also move downward. When the electrode column extends into the silicon liquid, since it has been heated synchronously with the quartz crucible, the electrode column will not be damaged due to excessive temperature difference. At this time, the conductive ball located below the conductive strip will contact the conductive ball above the compression spring, and the compression spring will be compressed, so that the copper sheet contacts the contact piece, causing the electrode column to automatically discharge, thereby adsorbing the impurities in the silicon liquid through the adsorption column below the electrode column.

[0019] 2. The single crystal furnace slag adsorption machine of the present invention, by setting a scraping frame, after the adsorption column below the electrode column adsorbs the impurities, the electrode column will rotate to contact the scraping frame through the connection of the rotating ring and the thread. At this time, the rotating column is started, and the impurities on the surface of the adsorption column can be cleaned by the cleaning column. In addition, the adjusting spring can also make the cleaning column have a certain elasticity, so that the surface of the adsorption column will not be damaged during the cleaning process. Attached Figure Description

[0020] The invention will now be further described with reference to the accompanying drawings.

[0021] Figure 1 This is a perspective view of Embodiment 1 of the present invention;

[0022] Figure 2 This is a front view of Embodiment 1 of the present invention;

[0023] Figure 3 This is an internal view of the container of the present invention;

[0024] Figure 4 yes Figure 3 Enlarged view of a portion of point A in the middle;

[0025] Figure 5 This is a diagram showing the positions of the adsorption column and the quartz crucible in this invention;

[0026] Figure 6 yes Figure 5 Enlarged view of a section at point B in the middle;

[0027] Figure 7 yes Figure 5 Enlarged view of a section at point C;

[0028] Figure 8 This is a positional diagram of the conductive ball and conductive strip of the present invention;

[0029] Figure 9 This is a positional diagram of the temporary storage frame and the scraping frame of the present invention;

[0030] Figure 10 This is an internal view of the scraping frame of the present invention;

[0031] Figure 11 This is a positional diagram of the scraping frame and the abutment plate of the present invention;

[0032] In the diagram: 1. Base frame; 2. Holding cylinder; 21. Quartz crucible; 3. Crystal pulling structure; 31. Furnace lid; 32. Stretching tube; 33. Drive motor; 34. Rotating frame; 35. Seed crystal; 4. Slag removal structure; 401. Telescopic cylinder; 402. Temporary storage frame; 403. Fixing rod; 404. Electrode post; 405. Sliding rod; 406. Lifting frame; 407. Connecting plate; 408. Thread; 409. Conductive strip; 410. 411. Snap-fit ​​ball; 412. Rotating ring; 413. Conductive ball; 414. Compression spring; 415. Copper sheet; 416. Contact piece; 417. Scraping frame; 418. Adsorption column; 419. Abutment plate; 420. Abutment groove; 421. Cleaning column; 422. Rotating column; 423. Sliding arm; 424. Adjusting spring; 425. Reset spring; 426. Limiting strip; 427. Placement plate; 428. Coil spring. Detailed Implementation

[0033] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below in conjunction with specific embodiments. Example 1

[0034] like Figures 1 to 11As shown in the figure, a slag-adhesive machine for a single crystal furnace according to an embodiment of the present invention is used in conjunction with a container 2 inside the single crystal furnace. A quartz crucible 21 is placed inside the container 2. A crystal pulling structure 3 is provided at the upper end of the container 2. The crystal pulling structure 3 includes a furnace cover 31 and a slag-lifting structure 4. The slag-lifting structure 4 includes: two fixed rods 403 located inside the container 2 near the end of the quartz crucible 21; a sliding rod 405 fixedly connected to the inside of the fixed rods 403; a thread 408 formed on the arc surface of the sliding rod 405; a rotating ring 412 slidably connected to the surface of the sliding rod 405, and the rotating ring 412 is threadedly connected to the thread 408 after movement; an electrode post 404 located at the eccentric position at the lower end of the rotating ring 412; and an adsorption post 418 located at the lower end of the electrode post 404.

[0035] Specifically, this solution includes a single-crystal furnace slag removal machine that removes impurities from molten silicon during crystal pulling in a single-crystal furnace. In operation, the silicon raw material is first placed inside a quartz crucible 21. Then, the furnace lid 31 is rotated to the top of the container 2, sealing the interior of the container 2. At this point, the heating system located at the bottom of the quartz crucible 21 is activated. During heating, the silicon raw material gradually transforms into molten silicon. As the molten silicon is exposed to air, it reacts with oxygen, nitrogen, carbon dioxide, etc., generating impurities such as oxides and nitrides. These impurities adhere to the surface of the molten silicon, becoming part of the impurities in the molten silicon. At this point, the rotating... As the rotating ring 412 moves downwards, it will move downwards along the surface of the sliding rod 405. Initially, the electrode post 404 connected to the rotating ring 412 is not located at the upper end of the quartz crucible 21. During the movement, the rotating ring 412 will be threaded into the thread 408, thereby causing the electrode post 404 to rotate to directly above the quartz crucible 21. Since the electrode post 404 is connected to the rotating ring 412, the adsorption column 418 below the electrode post 404 will eventually be driven into the interior of the molten silicon. At this time, the controller inside the two electrode posts 404 is activated; one electrode post 404 is the positive electrode post 404, and the other is the negative electrode post 404. 4. Since the quartz crucible 21 contains molten silicon, when the two electrode posts 404 come into contact with the molten silicon, they form a series circuit and create an electric field with the molten silicon. This electric field acts on the ions in the molten silicon, causing them to move towards the electrode posts 404 under the influence of the electric field force. This allows the positive electrode post 404 to adsorb negative impurity ions from the molten silicon, while the negative electrode post 404 adsorbs positive impurity ions. In this way, impurities in the molten silicon can be effectively adsorbed onto the surface of the adsorption posts 418. Subsequently, the seed crystal 35 is activated, and the seed crystal 35 will move downwards into the interior of the quartz crucible 21, interacting with the already removed impurities. When the silicon liquid phase contacts the crystal seed 35, raising the crystal seed 35 allows for crystal pulling. At this time, the pulled silicon rod will not be affected by impurities in the silicon liquid. Finally, after the single crystal production is completed, the rotating ring 412 is restarted. The rotating ring 412 will drive the electrode post 404 to move upward. During the movement, the rotating ring 412 will contact the thread 408 again, causing the rotating ring 412 to drive the electrode post 404 to rotate to the reset position. This moves the electrode post 404 to the upper outer side of the quartz crucible 21, so that impurities will not fall into the interior of the quartz crucible 21 when the adsorption post 418 is cleaned later.

[0036] like Figures 1 to 8As shown, the slag removal structure 4 also includes: a lifting frame 406, which is slidably connected inside the sliding rod 405 and rotatably connected to the rotating ring 412; a connecting plate 407, which is located at the upper end of the lifting frame 406; and a conductive strip 409, which is located at one end of the rotating ring 412 and the other end of the rotating ring 412 is connected to the electrode post 404.

[0037] Specifically, after the silicon raw material is placed into the quartz crucible 21, the rotating frame 34 is activated. The rotating frame 34 will move the furnace cover 31 to the upper end of the container 2. Then, when impurities are generated on the surface of the silicon liquid, the connecting plate 407 is activated to move downward. The connecting plate 407 will move the rotating ring 412 together through the lifting frame 406. During the movement, when the rotating ring 412 contacts the thread 408, the rotating ring 412 will rotate at the lower end of the lifting frame 406, but it will not affect the downward movement. When the adsorption column 418 moves into the silicon liquid, the conductive strip 409 is activated. The conductive strip 409 will supply current to the electrode column 404, so that the electrode column 404 is charged.

[0038] like Figure 8 As shown, the fixed rod 403 has a contact piece 416 inside, and a copper piece 415 is provided at one end of the fixed rod 403 near the contact piece 416. The copper piece 415 is placed at an angle and contacts the contact piece 416 when working. A compression spring 414 is provided at the upper end of the copper piece 415, and a conductive ball 413 is provided at the upper end of the compression spring 414. The conductive ball 413 is slidably connected inside the fixed rod 403. A conductive ball 413 is also provided at the lower end of the conductive strip 409.

[0039] Specifically, when the rotating ring 412 moves the adsorption column 418 into the interior of the molten silicon, the conductive ball 413 located below the conductive strip 409 will abut against the conductive ball 413 at the upper end of the compression spring 414. Subsequently, as the rotating ring 412 moves downward, the conductive ball 413 at the upper end of the compression spring 414 will cause the compression spring 414 to contract. When the compression spring 414 contracts, it will cause the copper sheet 415 to contact the contact piece 416. Since one end of the contact piece 416 is directly connected to the power supply, and the contact piece 416 is in contact with the copper sheet 415, the contact piece 415 will contact the contact piece 416. The contact between the plates 415 is not completely smooth, but consists of many tiny contact points. The contact plate 416 and the copper plate 415 form a conductive path, allowing the current to be directly conducted to the electrode post 404 through the conductive ball 413, ultimately enabling the adsorption post 418 to adsorb impurities. This conductive form allows the adsorption post 418 to be automatically and quickly charged when it moves into the silicon liquid, thus avoiding the phenomenon that the adsorption post 418 is not charged when it moves into the silicon liquid.

[0040] like Figures 1 to 6As shown, the furnace cover 31 is provided with a telescopic cylinder 401 inside, and a snap-fit ​​ball 410 is provided at one end of the telescopic cylinder 401 near the connecting plate 407. A buckle 411 is provided at the upper end of the connecting plate 407, and the snap-fit ​​ball 410 is snapped into the inner wall of the buckle 411.

[0041] Specifically, by setting up a telescopic cylinder 401, when it is necessary to move the rotating ring 412 downward, the telescopic cylinder 401 is activated, one end of the telescopic cylinder 401 will extend downward and abut against the connecting plate 407, causing the connecting plate 407 to also move downward. When the adsorption column 418 moves into the interior of the silicon liquid, the rotating ring 412 has also moved to the bottom of the sliding rod 405. When the telescopic cylinder 401 extends downward again, the locking ball 410 will move into the interior of the buckle 411 to achieve locking. After the adsorption column 418 has finished adsorbing the impurities in the silicon liquid, the telescopic cylinder 401 is activated again, and the telescopic cylinder 401 will reset. Since the locking ball 410 is locked in the buckle 411, the telescopic cylinder 401 will also drive the adsorption column 418 to reset together.

[0042] like Figures 1 to 7 As shown, the connecting plate 407 has a coil spring 428 inside, one end of the coil spring 428 has a placement plate 427, and the fixing rod 403 has a limiting strip 426 inside the end near the placement plate 427.

[0043] Specifically, by setting up the placement plate 427, in the initial state, the placement plate 427 will be located on the surface of the limiting strip 426, thereby fixing the connecting plate 407. Subsequently, when the telescopic cylinder 401 drives the connecting plate 407 to move downward, the placement plate 427 will rotate upward around the coil spring 428 as the axis, thereby retracting into the interior of the connecting plate 407, allowing the connecting plate 407 to slide inside the fixing rod 403. When the telescopic cylinder 401 drives the connecting plate 407 to reset, when the placement plate 427 passes the limiting strip 426, the coil spring 428 will release its elastic force, ultimately moving the placement plate 427 to its original position. When the telescopic cylinder 401 pulls the connecting plate 407 upward, due to the limiting of the connecting plate 407, the placement plate 427 will not be able to rotate downward. At this time, the snap-fit ​​ball 410 will automatically separate from the snap fastener 411 for subsequent slag adhesion work. Example 2

[0044] like Figures 1 to 9 As shown in the first embodiment, another embodiment of the present invention is as follows: a temporary storage frame 402 is provided at one end of the container 2 near the quartz crucible 21, and a scraping frame 417 is provided inside the temporary storage frame 402, and the inner wall of the scraping frame 417 is in contact with the adsorption column 418.

[0045] Specifically, by setting up the scraping frame 417, during the process of the slag adhesion being completed and the rotating ring 412 moving upward and resetting, the electrode column 404 and the adsorption column 418 will rotate to the upper end away from the quartz crucible 21. During the rotation, the adsorption column 418 will come into contact with the inner wall of the scraping frame 417, thereby scraping off the impurities on the surface of the adsorption column 418 and collecting them in the temporary storage frame 402.

[0046] like Figures 1 to 10 As shown, an abutment plate 419 is rotatably connected to the end of the scraping frame 417, and a rotating column 422 is rotatably connected inside the scraping frame 417. One end of the rotating column 422 is provided with a cleaning column 421, and the cleaning column 421 contacts the adsorption column 418 during operation.

[0047] Specifically, before the adsorption column 418 enters the interior of the scraping frame 417, it first contacts the abutment plate 419 and then enters the interior of the scraping frame 417. At this time, the rotating column 422 is activated, which will drive the cleaning column 421 to rotate. During the rotation, the impurities on the surface of the adsorption column 418 will be removed so that the adsorption column 418 can be used directly afterward.

[0048] like Figures 1 to 10 As shown, a sliding arm 423 is provided at one end of the rotating column 422 near the cleaning column 421, and the cleaning column 421 slides on the surface of the sliding arm 423. An adjusting spring 424 is provided on the surface of the sliding arm 423, and one end of the adjusting spring 424 is connected to the rotating column 422.

[0049] Specifically, by setting an adjusting spring 424, when the cleaning column 421 abuts against the surface of the adsorption column 418, the cleaning column 421 can slide on the surface of the sliding arm 423, thereby allowing the force applied by the cleaning column 421 to the adsorption column 418 to be adjusted, and the adjusting spring 424 can also keep the cleaning column 421 in contact with the adsorption column 418 at all times.

[0050] like Figures 1 to 10 As shown, the surface of the abutment plate 419 is provided with an abutment groove 420, and the abutment groove 420 is in contact with the adsorption column 418.

[0051] Specifically, by opening the abutment groove 420, when the adsorption column 418 comes into contact with the abutment plate 419, the adsorption column 418 will first come into contact with the abutment groove 420. Since the size of the abutment groove 420 matches the adsorption column 418, this can ensure that the adsorption column 418 accurately opens the abutment plate 419.

[0052] like Figure 11 As shown, a return spring 425 is provided at one end of the abutment plate 419, and the other end of the return spring 425 is connected to the scraping frame 417.

[0053] Specifically, by setting a reset spring 425, after the adsorption column 418 pushes the abutment plate 419 away, the reset spring 425 will release its elastic force at this time, thereby driving the abutment plate 419 to reset, so as to facilitate subsequent cleaning work.

[0054] Working Principle: This solution is a single-crystal furnace slag removal machine that removes impurities from molten silicon during crystal pulling in a single-crystal furnace. Before use, the silicon raw material is first placed inside the quartz crucible 21. The rotating frame 34 is then activated, which moves the furnace cover 31 to the upper end of the container 2, thus sealing the interior of the container 2. At this time, the heating system located at the lower end of the quartz crucible 21 is activated. During the heating process, the silicon raw material gradually transforms into molten silicon. As the molten silicon is exposed to air, it reacts with oxygen, nitrogen, carbon dioxide, etc., to generate impurities such as oxides and nitrides. These impurities adhere to the surface of the molten silicon, becoming impurities in the molten silicon. At this time, the telescopic cylinder 401 is activated, and one end of the telescopic cylinder 401 will move towards... The electrode post 404 extends downwards and abuts against the connecting plate 407, causing the connecting plate 407 to move downwards as well. This moves the adsorption post 418 below the electrode post 404 into the interior of the molten silicon. At this point, the conductive ball 413 below the conductive strip 409 abuts against the conductive ball 413 at the upper end of the compression spring 414. Subsequently, the rotating ring 412 moves downwards continuously, causing the conductive ball 413 at the upper end of the compression spring 414 to contract. When the compression spring 414 contracts, it causes the copper sheet 415 to contact the contact piece 416. Since one end of the contact piece 416 is directly connected to the power supply, and the contact between the contact piece 416 and the copper sheet 415 is not completely smooth but consists of many tiny contact points, the contact piece 416 and the copper sheet 415... The contact of plate 415 forms a conductive path, allowing current to be directly conducted to electrode post 404 through conductive ball 413. Since the quartz crucible 21 contains molten silicon, the two electrode posts 404 are in contact with the molten silicon, forming a series circuit. This series circuit transforms one of the two electrode posts 404 into a positive electrode post 404 capable of adsorbing negative ions of impurities in the molten silicon, while the other electrode post 404 becomes a negative electrode post 404 capable of adsorbing positive ions of impurities in the molten silicon. In this way, impurities in the molten silicon can be effectively adsorbed onto the surface of adsorption post 418. Then, seed crystal 35 is activated, moving downwards into the interior of the quartz crucible 21 to contact the already purified molten silicon. As seed crystal 35 extends into the molten silicon, lifting seed crystal 35 allows for further processing. During the crystal pulling operation, the pulled silicon rod will not be affected by impurities in the molten silicon. After the single crystal production is completed, the telescopic cylinder 401 is activated again, which will drive the connecting plate 407 to reset. When the placement plate 427 passes the limit bar 426, the coil spring 428 will release its elasticity, eventually moving the placement plate 427 to its original position. When the telescopic cylinder 401 pulls the connecting plate 407 upward, the placement plate 427 will not be able to rotate downward due to the limit of the connecting plate 407. At this time, the retaining ball 410 will automatically separate from the buckle 411. During the process of the slag adhesion being completed and the rotating ring 412 moving upward and resetting, the electrode column 404 and the adsorption column 418 will rotate to the upper end away from the quartz crucible 21.During rotation, the adsorption column 418 will come into contact with the inner wall of the scraping frame 417, thereby scraping off impurities from the surface of the adsorption column 418 and collecting them in the temporary storage frame 402.

[0055] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A slag-binding machine for a single crystal furnace, used in conjunction with a container (2) inside the single crystal furnace, wherein a quartz crucible (21) is placed inside the container (2), and a crystal pulling structure (3) is provided at the upper end of the container (2), the crystal pulling structure (3) including a furnace cover (31), characterized in that: Including the slag removal structure (4); The slag removal structure (4) includes: Fixing rods (403), two of the fixing rods (403) are located inside the container (2) at one end near the quartz crucible (21); A sliding rod (405) is fixedly connected inside the fixed rod (403); A thread (408) is formed on the sliding rod (405); A rotating ring (412) is slidably connected to the surface of the sliding rod (405), and the rotating ring (412) is threadedly connected to the thread (408) after it moves. Electrode post (404), the electrode post (404) is located at the eccentric position at the lower end of the rotating ring (412); An adsorption column (418) is disposed at the lower end of the electrode column (404); The slag removal structure (4) also includes: The lifting frame (406) is slidably connected inside the sliding rod (405), and the lifting frame (406) is rotatably connected to the rotating ring (412); A connecting plate (407) is provided at the upper end of the lifting frame (406); A conductive strip (409) is disposed at one end of the rotating ring (412), and the other end of the rotating ring (412) is connected to the electrode post (404); The fixing rod (403) has a contact piece (416) inside. A copper piece (415) is provided at one end of the fixing rod (403) near the contact piece (416). The copper piece (415) is placed at an angle. The copper piece (415) contacts the contact piece (416) when working. A compression spring (414) is provided at the upper end of the copper piece (415). A conductive ball (413) is provided at the upper end of the compression spring (414). The conductive ball (413) is slidably connected inside the fixing rod (403). A conductive ball (413) is also provided at the lower end of the conductive strip (409).

2. The slag-adhesion machine for a single crystal furnace according to claim 1, characterized in that: The furnace cover (31) is provided with a telescopic cylinder (401) inside, and a snap-fit ​​ball (410) is provided at one end of the telescopic cylinder (401) near the connecting plate (407). A buckle (411) is provided at the upper end of the connecting plate (407), and the snap-fit ​​ball (410) is snapped into the inner wall of the buckle (411).

3. A slag-adhesion machine for a single crystal furnace according to claim 2, characterized in that: The connecting plate (407) is provided with a coil spring (428) inside, and a placement plate (427) is provided at one end of the coil spring (428). A limiting strip (426) is provided at one end of the fixing rod (403) near the placement plate (427).

4. The slag-adhesion machine for a single crystal furnace according to claim 1, characterized in that: The container (2) has a temporary storage frame (402) at one end near the quartz crucible (21). The temporary storage frame (402) has a scraping frame (417) inside, and the inner wall of the scraping frame (417) is in contact with the adsorption column (418).

5. A slag-adhesion machine for a single crystal furnace according to claim 4, characterized in that: The scraping frame (417) is rotatably connected to an abutment plate (419) at one end, and a rotating column (422) is rotatably connected inside the scraping frame (417). One end of the rotating column (422) is provided with a cleaning column (421), and the cleaning column (421) contacts the adsorption column (418) during operation.

6. A slag-adhesion machine for a single crystal furnace according to claim 5, characterized in that: The rotating column (422) has a sliding arm (423) at one end near the cleaning column (421), and the cleaning column (421) slides on the surface of the sliding arm (423). The surface of the sliding arm (423) is provided with an adjusting spring (424), and one end of the adjusting spring (424) is connected to the rotating column (422).

7. A slag-adhesion machine for a single crystal furnace according to claim 6, characterized in that: The surface of the abutment plate (419) is provided with an abutment groove (420), and the abutment groove (420) is in contact with the adsorption column (418).

8. A slag-adhesion machine for a single crystal furnace according to claim 7, characterized in that: One end of the abutment plate (419) is provided with a return spring (425), and the other end of the return spring (425) is connected to the scraping frame (417).

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