Heat treatment method and heat treatment equipment for semiconductor workpiece

Abstract

The embodiment of the invention provides a heat treatment method and heat treatment equipment for a semiconductor workpiece. The heat treatment method comprises the steps that first process gas enters the top of a reaction cavity of the heat treatment equipment through a gas inlet port of the heat treatment equipment; diffusing the first process gas at the top of the reaction cavity to an edge area of the semiconductor workpiece below the top of the reaction cavity through a through hole with a first density in a top gas diffusion plate; diffusing the first process gas at the top of the reaction cavity to a central area of the semiconductor workpiece below the top of the reaction cavity through a through hole with a second density in a top gas diffusion plate; and performing heat treatment on the semiconductor workpiece in the atmosphere of the diffused first process gas. By means of the heat treatment method, the gas utilization rate can be increased, and the gas diffusion uniformity is improved.

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure generally relate to the field of semiconductor manufacturing, and more particularly to a method and apparatus for thermally treating a semiconductor workpiece. Background Art

[0002] During a wafer processing process, such as a thermal processing process, gases diffuse freely when entering a processing chamber, resulting in a reduction in the amount of gas involved in the thermal processing of the wafer. Summary of the invention

[0003] A first aspect of the present disclosure provides a method for heat treating a semiconductor workpiece, comprising: allowing a first process gas to enter the top of a reaction chamber of the heat treatment equipment through an air inlet port of the heat treatment equipment; allowing the first process gas at the top of the reaction chamber to diffuse to an edge area of ​​the semiconductor workpiece below the top of the reaction chamber through through holes having a first density on a top gas diffusion plate; allowing the first process gas at the top of the reaction chamber to diffuse to a central area of ​​the semiconductor workpiece below the top of the reaction chamber through through holes having a second density on the top gas diffusion plate; and performing heat treatment on the semiconductor workpiece in an atmosphere of the diffused first process gas.

[0004] The heat treatment method disclosed in the present invention can improve the utilization rate of gas and enhance the uniformity of gas diffusion.

[0005] In some embodiments, allowing the first process gas to enter the top of the reaction chamber of the heat treatment equipment through the gas inlet port of the heat treatment equipment includes: disposing a top gas inlet device connected to the gas inlet port in the reaction chamber, the top gas inlet device includes a gas guide part, one end of the gas guide part is connected to the gas inlet port, and the other end of the gas guide part is located at the top of the reaction chamber, so that the first process gas discharged from the gas inlet port is transported to the top of the reaction chamber of the heat treatment equipment through the gas guide part.

[0006] In some embodiments, allowing the first process gas at the top of the reaction chamber to diffuse to the edge area of ​​the semiconductor workpiece located below the top of the reaction chamber through through holes having a first density on a top gas diffusion plate includes: setting a top gas diffusion plate at the top of the reaction chamber, the top gas diffusion plate including a plurality of through holes; configuring the workpiece below the top gas diffusion plate and arranged opposite to the plurality of through holes; configuring the plurality of through holes to be arranged on the top gas diffusion plate with different densities, wherein the through holes located at the edge area of ​​the top gas diffusion plate have a first density, so that the first process gas at the top of the reaction chamber diffuses from top to bottom to the edge area of ​​the semiconductor workpiece through the through holes having the first density.

[0007] In some embodiments, allowing the first process gas at the top of the reaction chamber to diffuse to the central area of ​​the semiconductor workpiece located below the top of the reaction chamber through through holes having a second density on the top gas diffusion plate includes: configuring the through holes in the central area of ​​the top gas diffusion plate among the multiple through holes to have the second density, so that the first process gas at the top of the reaction chamber diffuses from top to bottom to the central area of ​​the semiconductor workpiece through the through holes having the second density.

[0008] In some embodiments, the first density is configured less than the second density.

[0009] In some embodiments, a first group of through holes and a second group of through holes are arranged at intervals in the edge region of the top gas diffusion plate, and the connecting lines of the second group of through holes form an inscribed hexagon of the top gas diffusion plate. The area surrounded by the inscribed hexagon defines the central area of ​​the top gas diffusion plate.

[0010] In some embodiments, the second set of through holes is arranged at a distance from the center of the top gas diffuser plate that is smaller than the distance from the first set of through holes to the center of the top gas diffuser plate, and the number of through holes in the second set is greater than the number of through holes in the first set.

[0011] The second aspect of the present disclosure provides a heat treatment device. The heat treatment device includes: a reaction chamber for accommodating a workpiece to be heat treated; an air inlet port and an exhaust port, wherein the port is connected to a first gas source to deliver a first process gas into the reaction chamber to perform heat treatment on the workpiece, and the exhaust port is used to discharge the first process gas out of the reaction chamber; a top air inlet device, which is arranged on the air inlet side of the reaction chamber of the heat treatment device and connected to the air inlet port, and the top air inlet device includes a gas guide part, the first end of the gas guide part is connected to the air inlet port, and the second end of the gas guide part is located in the reaction chamber to deliver the first process gas into the reaction chamber; a top gas diffusion plate, which includes a plurality of through holes, and the first process gas delivered through the air inlet port enters the first end of the gas guide part and flows to the top of the top gas diffusion plate through the second end of the gas guide part, and then reaches the workpiece through the plurality of through holes.

[0012] By configuring a top gas diffusion plate with a plurality of through holes, the utilization rate of the gas can be increased and the uniformity of gas diffusion can be improved.

[0013] In some embodiments, the plurality of through holes of the top gas diffuser plate are distributed at different densities, wherein the through holes at the edge region of the top gas diffuser plate have a first density, and the through holes at the center region of the top gas diffuser plate have a second density.

[0014] In some embodiments, the first density is less than the second density.

[0015] In some embodiments, the through holes located at the edge area of ​​the top gas diffusion plate include a first group of through holes and a second group of through holes spaced apart, the connecting lines of the second group of through holes form an inscribed hexagon of the top gas diffusion plate, and the area surrounded by the inscribed hexagon defines the central area of ​​the top gas diffusion plate.

[0016] In some embodiments, two adjacent through holes in the edge region of the top gas diffusion plate have a first hole spacing, and two adjacent through holes in the center region of the top gas diffusion plate have a second hole spacing, wherein the first hole spacing is greater than the second hole spacing.

[0017] In some embodiments, compared with the first group of through holes, the second group of through holes is closer to the central area of ​​the top gas diffuser plate, and the number of the second group of through holes is greater than the number of the first group of through holes.

[0018] In some embodiments, the heat treatment equipment further comprises a side gas inlet device, the side gas inlet device comprises a gas supply portion, the gas inlet end of the gas supply portion is connected to the second gas source, and the gas outlet end of the gas supply portion is configured to extend toward the edge of the processing surface of the workpiece, so as to transport the second process gas supplied by the second gas source to the processing surface of the workpiece for heat treatment.

[0019] It should be understood that the contents described in the summary of the invention are not intended to limit the key or important features of the embodiments of the present disclosure, nor are they intended to limit the scope of the present disclosure. Other features of the present disclosure will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above and other features, advantages and aspects of the embodiments of the present disclosure will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. In the accompanying drawings, the same or similar reference numerals represent the same or similar elements, wherein:

[0021] Figure 1 is a schematic diagram of a heat treatment method according to an embodiment of the present disclosure;

[0022] Figure 2 is a schematic structural diagram of a heat treatment device according to an embodiment of the present disclosure;

[0023] Figure 3 It is a schematic diagram of the structure of the heat treatment equipment of an embodiment of the present disclosure.

[0024] Description of reference numerals:

[0025] 100: Heat treatment equipment;

[0026] 101: reaction chamber;

[0027] 1011: Artifacts;

[0028] 102: air intake port;

[0029] 103: Exhaust port;

[0030] 104: gas guide part;

[0031] 105: top gas diffusion plate;

[0032] 106: through hole;

[0033] 1051: marginal area;

[0034] 1052: Central area. DETAILED DESCRIPTION

[0035] The following is a description of exemplary embodiments of the present disclosure in conjunction with the accompanying drawings, including various details of the embodiments of the present disclosure to facilitate understanding, which should be considered as merely exemplary. Therefore, it should be recognized by those of ordinary skill in the art that various changes and modifications may be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Similarly, for the sake of clarity and conciseness, descriptions of well-known functions and structures are omitted in the following description.

[0036] like Figure 1 As shown, an embodiment of the present disclosure provides a method for heat treating a semiconductor workpiece, comprising:

[0037] S101: allowing a first process gas to enter the top of a reaction chamber of the heat treatment equipment through a gas inlet port of the heat treatment equipment;

[0038] S102: allowing a first process gas at the top of the reaction chamber to diffuse to an edge region of a semiconductor workpiece located below the top of the reaction chamber through through holes having a first density on a top gas diffusion plate;

[0039] S103: allowing the first process gas at the top of the reaction chamber to diffuse to the central area of ​​the semiconductor workpiece located below the top of the reaction chamber through the through holes with a second density on the top gas diffusion plate;

[0040] S104: performing heat treatment on the semiconductor workpiece in the first process gas atmosphere after diffusion.

[0041] The heat treatment method disclosed in the present invention can improve the utilization rate of gas and enhance the uniformity of gas diffusion.

[0042] In some embodiments, S101 includes:

[0043] A top gas inlet device connected to the gas inlet port is arranged in the reaction chamber, and the top gas inlet device includes a gas guide part, one end of the gas guide part is connected to the gas inlet port, and the other end of the gas guide part is located at the top of the reaction chamber, so that the first process gas discharged from the gas inlet port is transported to the top of the reaction chamber of the heat treatment equipment through the gas guide part.

[0044] In some embodiments, S102 includes:

[0045] A top gas diffusion plate is arranged on the top of the reaction chamber, and the top gas diffusion plate includes a plurality of through holes; a workpiece is arranged below the top gas diffusion plate and opposite to the plurality of through holes; and a plurality of through holes are arranged on the top gas diffusion plate with different densities, wherein the through holes located in the edge area of ​​the top gas diffusion plate have a first density, so that a first process gas located at the top of the reaction chamber diffuses from top to bottom to the edge area of ​​the semiconductor workpiece through the through holes having the first density.

[0046] In some embodiments, S103 includes:

[0047] The through holes in the central area of ​​the top gas diffusion plate among the plurality of through holes are configured to have a second density so that the first process gas at the top of the reaction chamber diffuses from top to bottom to the central area of ​​the semiconductor workpiece through the through holes with the second density.

[0048] In some embodiments, the first density is configured less than the second density.

[0049] In some embodiments, a first group of through holes and a second group of through holes are arranged at intervals in the edge region of the top gas diffusion plate, and the connecting lines of the second group of through holes form an inscribed hexagon of the top gas diffusion plate. The area surrounded by the inscribed hexagon defines the central region of the top gas diffusion plate.

[0050] In some embodiments, the distance between the second set of through holes and the center area of ​​the top gas diffuser plate is smaller than the distance between the first set of through holes and the center area of ​​the top gas diffuser plate, and the number of the second set of through holes is greater than the number of the first set of through holes.

[0051] like Figure 2 , Figure 3 As shown, an embodiment of the present disclosure further provides a heat treatment device 100, including a reaction chamber 101, for accommodating a workpiece 1011 to be subjected to heat treatment. The heat treatment device 100 further includes an inlet port 102 and an exhaust port 103, wherein the inlet port 102 is connected to a first gas source to deliver a first process gas into the reaction chamber 101 to perform heat treatment on the workpiece 1011, and the exhaust port 103 is used to exhaust the first process gas from the reaction chamber 101.

[0052] The heat treatment equipment 100 further includes a top air intake device, which is disposed on the air intake side of the reaction chamber 101 of the heat treatment equipment 100 and connected to the air intake port 102. The side of the reaction chamber 101 corresponding to the air intake port 102 is the air intake side.

[0053] The top gas inlet device includes a gas guide part 104, which has a first end and a second end arranged opposite to each other; the first end of the gas guide part 104 is connected to the gas inlet port 102, and the second end of the gas guide part 104 is located in the reaction chamber 101 to transport the first process gas into the reaction chamber 101.

[0054] The heat treatment equipment 100 also includes a top gas diffusion plate 105, which includes a plurality of through holes 106. The first process gas delivered through the gas inlet port 102 enters the first end of the gas guide part 104 and flows through the second end of the gas guide part 104 to above the top gas diffusion plate 105, and then reaches the workpiece 1011 through the plurality of through holes 106.

[0055] The heat treatment device 100 is a device for applying heat energy to a workpiece 1011 (such as a wafer) during the semiconductor manufacturing process. The reaction chamber 101 is a portion of the device that accommodates the workpiece 1011. The workpiece 1011 is placed in the reaction chamber 101 and undergoes heat treatment. The first gas source may be a device for providing a first process gas, and the first gas source is usually connected to the gas inlet port 102 of the reaction chamber 101. The gas inlet port 102 of the heat treatment device 100 can be understood as being arranged at Figure 2 , Figure 3 The outlet port of the heat treatment device 100 can be understood as being arranged on the left side. Figure 2 , Figure 3 on the right side.

[0056] For ease of description, this embodiment will be described by taking the part of the top air inlet device located in the reaction chamber 101 as being located above the workpiece 1011, and the direction toward the central axis of the reaction chamber 101 as the inner side. Accordingly, the end of the reaction chamber 101 located above the workpiece 1011 is the top (or upper part). The axial direction of the reaction chamber 101 is Figure 2 The up and down directions in .

[0057] The top air intake device is located at the air intake side of the reaction chamber 101 and is connected to the air intake port 102. It can be understood that the heat treatment equipment 100 in this embodiment adopts the form of top air intake. Among them, the air intake port 102 can be located in the middle or top of the reaction chamber 101. Top air intake can be understood as: the top air intake device has a second end located in the reaction chamber 101, the second end is located above the workpiece 1011, and the second end is relatively close to the top of the reaction chamber 101.

[0058] When performing the heat treatment process, the first process gas provided by the first gas source is discharged from the left side of the reaction chamber 101 through the top gas inlet device into the reaction chamber 101 , and flows out from the right side of the reaction chamber 101 after the heat treatment.

[0059] The position of the gas guide portion 104 relative to the reaction chamber 101 can be adjusted. Figure 3 The example in which the gas guide part 104 is completely located in the reaction chamber 101 is shown. The first end of the gas guide part 104 is connected to the gas inlet port 102. The gas inlet port 102 can be connected to the gas inlet port 102 through Figure 3 The flange protruding from the left side of the reaction chamber 101 is connected to the first gas source. In some embodiments, the gas guide portion 104 can be made of quartz material.

[0060] The top gas diffuser is Figure 2 , Figure 3 In the structure shown by reference numeral 105, the top gas diffusion plate 105 is located in the region near the top of the reaction chamber 101. The plurality of through holes 106 on the top gas diffusion plate 105 may be through holes of the same specification and size, for example, all of which are circular holes of 0.5-2 mm, so as to improve the uniformity of the first process gas reaching the workpiece 1011.

[0061] The top gas diffuser plate 105 has a central region 1052 and an edge region 1051 located in the central region. The through holes 106 located in the central region 1052 may be arranged differently from the through holes 106 located in the edge region 1051. For example, in some embodiments, the plurality of through holes 106 of the top gas diffuser plate 105 are distributed at different densities, wherein the through holes 106 located in the edge region 1051 have a first density, and the through holes 106 located in the central region 1052 have a second density. Figure 3 An embodiment in which the first density is less than the second density is shown. By providing through holes 106 of different densities, the gas flow through different areas of the top gas diffuser plate 105 can be controlled.

[0062] In some embodiments, the edge region 1051 may correspond to the edge region of the workpiece 1011, and the center region 1052 may correspond to the center region of the workpiece 1011, and the center region of the workpiece 1011 is located inside the edge region of the workpiece. The second density and the first density are respectively related to the amount of gas required for the center region and the edge region of the workpiece 1011. For example, if the amount of gas required for the center region of the workpiece 1011 is twice the amount of gas required for the edge region of the workpiece 1011, the ratio of the second density to the first density is adjusted to 2:1.

[0063] When heat treatment is performed, most of the first process gas in the top gas inlet device reaches the center area of ​​the workpiece 1011 from the through holes 106 in the central area 1052 with higher density to participate in heat treatment, while a small part of the first process gas reaches the edge area of ​​the workpiece 1011 from the through holes 106 in the edge area 1051 with lower density to participate in heat treatment. At least part of the first process gas reaching the center area of ​​the workpiece 1011 will diffuse toward the edge area of ​​the workpiece 1011 after contacting the workpiece 1011, and participate in heat treatment of the edge area of ​​the workpiece 1011 together with the first process gas reaching the edge area of ​​the workpiece 1011 from the edge area 1051 of the top gas diffusion plate 105. Such a configuration can improve the utilization rate of the gas and enhance the uniformity of gas diffusion.

[0064] like Figure 3 As shown, the through holes 106 located in the edge region 1051 of the top gas diffusion plate 105 include a first group of through holes and a second group of through holes spaced apart from each other, and the connecting lines of the second group of through holes form an inscribed hexagon of the top gas diffusion plate 105 ( Figure 3 The dashed line shows a hexagon defined by the connecting lines of the second group of through holes), and the area surrounded by the inscribed hexagon defines the central area 1052. The first group of through holes is located outside the central area 1052; in other words, compared with the first group of through holes, the second group of through holes is closer to the central area 1052, and the number of the second group of through holes is greater than the number of the first group of through holes.

[0065] In some embodiments, two adjacent through holes 106 in the through holes 106 in the edge region 1051 on the top gas diffuser plate 105 have a first hole spacing, and two adjacent through holes 106 in the through holes 106 in the center region 1052 on the top gas diffuser plate 105 have a second hole spacing, wherein the first hole spacing is greater than the second hole spacing. Exemplarily, the ratio of the first hole spacing to the second hole spacing is greater than 1 and less than or equal to a threshold value, and the threshold value is greater than 1; wherein the threshold value can be specifically set according to actual needs. Through the above setting, the gas flow rate through the edge region 1051 of the top gas diffuser plate 105 is less than the gas flow rate in the center region 1052, so as to control the amount of gas reaching different regions of the workpiece 1011.

[0066] In some embodiments, the heat treatment apparatus 100 further includes a side gas inlet device, which includes a gas supply unit for adjusting the amount of gas in the reaction chamber 101. The gas supply end of the gas supply unit is connected to the second gas source, and the gas supply end of the gas supply unit is configured to extend toward the edge of the processing surface of the workpiece 1011, so as to deliver the second process gas supplied by the second gas source to the processing surface of the workpiece 1011 for heat treatment.

[0067] The second gas source may be a device for providing a second process gas. The second gas source may be arranged Figure 2 , Figure 3 The left side, top side, and bottom side of the reaction chamber 101. The second process gas may be the same as or different from the first process gas.

[0068] The gas volume of the second process gas may be the same as or different from the gas volume of the first process gas. For example, in some embodiments, when the workpiece 1011 is heat-treated, the consumption of the first process gas is greater than the consumption of the second process gas, so the gas volume of the first process gas is adjusted to be greater than the gas volume of the second process gas, thereby improving the heat treatment effect of the workpiece 1011.

[0069] The heat treatment effect of the workpiece 1011 can be further improved by providing the gas replenishment part. The position of the gas outlet end of the gas replenishment part relative to the reaction chamber 101 can be adjusted. For example, in some embodiments, the gas outlet end of the gas replenishment part is positioned at Figure 2 , Figure 3 The midpoint between the gas inlet side and the gas outlet side. With such an arrangement, the gas discharged from the gas outlet covers substantially the same area on the left side of the workpiece 1011 and the right side of the workpiece 1011, thereby improving the uniformity of the heat treatment of the workpiece 1011.

[0070] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0071] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0072] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0073] In the present disclosure, unless otherwise expressly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0074] The disclosure above provides many different embodiments or examples to realize different structures of the present disclosure. In order to simplify the disclosure of the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0075] The above specific implementations do not constitute a limitation on the protection scope of the present disclosure. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A method for heat treatment of a semiconductor workpiece, comprising: Allowing a first process gas to enter the top of a reaction chamber of the heat treatment device through a gas inlet port of the heat treatment device; Allowing a first process gas at the top of the reaction chamber to diffuse to an edge region of a semiconductor workpiece located below the top of the reaction chamber through through holes having a first density on a top gas diffusion plate; Allowing the first process gas at the top of the reaction chamber to diffuse to the central area of ​​the semiconductor workpiece below the top of the reaction chamber through the through holes with a second density on the top gas diffusion plate; The semiconductor workpiece is subjected to a heat treatment in the first process gas atmosphere after the diffusion.

2. The heat treatment method according to claim 1, wherein: The step of allowing the first process gas to enter the top of the reaction chamber of the heat treatment equipment through the gas inlet port of the heat treatment equipment comprises: A top gas inlet device connected to the gas inlet port is arranged in the reaction chamber, and the top gas inlet device includes a gas guide part, one end of which is connected to the gas inlet port, and the other end of which is located at the top of the reaction chamber, so that the first process gas discharged from the gas inlet port is transported to the top of the reaction chamber of the heat treatment equipment through the gas guide part.

3. The heat treatment method according to claim 1 or 2, wherein: The step of causing the first process gas at the top of the reaction chamber to diffuse to the edge region of the semiconductor workpiece below the top of the reaction chamber through the through holes having a first density on the top gas diffusion plate comprises: A top gas diffusion plate is disposed on the top of the reaction chamber, wherein the top gas diffusion plate includes a plurality of through holes; Disposing a workpiece below the top gas diffuser plate and opposite to the plurality of through holes; The plurality of through holes are arranged at different densities on the top gas diffusion plate, wherein the through holes located at an edge region of the top gas diffusion plate have a first density, so that a first process gas located at the top of the reaction chamber diffuses from top to bottom to an edge region of the semiconductor workpiece through the through holes having the first density.

4. The heat treatment method according to claim 3, wherein: The step of causing the first process gas on the top of the reaction chamber to diffuse to the central area of ​​the semiconductor workpiece located below the top of the reaction chamber through the through holes with a second density on the top gas diffusion plate comprises: The through holes in the central area of ​​the top gas diffusion plate among the plurality of through holes are configured to have a second density so that the first process gas at the top of the reaction chamber diffuses from top to bottom to the central area of ​​the semiconductor workpiece through the through holes with the second density.

5. The heat treatment method according to claim 4, wherein: The first density is configured to be less than the second density.

6. The heat treatment method according to claim 5, wherein: A first group of through holes and a second group of through holes are arranged at intervals in the edge region of the top gas diffuser plate, and lines connecting the second group of through holes form an inscribed hexagon of the top gas diffuser plate. The area surrounded by the inscribed hexagon defines the central area of ​​the top gas diffuser plate.

7. The heat treatment method according to claim 6, wherein: The distance between the second group of through holes and the central area of ​​the top gas diffuser plate is smaller than the distance between the first group of through holes and the central area of ​​the top gas diffuser plate, and the number of the second group of through holes is greater than the number of the first group of through holes.

8. A heat treatment device comprising: A reaction chamber, used to accommodate a workpiece to be heat treated; an inlet port and an exhaust port, wherein the inlet port is connected to a first gas source to deliver a first process gas into the reaction chamber to perform heat treatment on the workpiece, and the exhaust port is used to exhaust the first process gas out of the reaction chamber; A top gas inlet device is disposed at the gas inlet side of the reaction chamber of the heat treatment equipment and connected to the gas inlet port, the top gas inlet device comprises a gas guide portion, a first end of the gas guide portion is connected to the gas inlet port, and a second end of the gas guide portion is located in the reaction chamber to transport the first process gas into the reaction chamber; The top gas diffusion plate comprises a plurality of through holes, and the first process gas delivered through the gas inlet port enters the first end of the gas guide portion and flows to above the top gas diffusion plate through the second end of the gas guide portion, and then reaches the workpiece through the plurality of through holes.

9. The heat treatment equipment according to claim 8, wherein: The plurality of through holes of the top gas diffuser plate are distributed at different densities, wherein the through holes located at the edge area of ​​the top gas diffuser plate have a first density, and the through holes located at the center area of ​​the top gas diffuser plate have a second density.

10. The heat treatment equipment according to claim 9, wherein: The first density is less than the second density.

11. The heat treatment equipment according to claim 10, wherein: The through holes located at the edge area of ​​the top gas diffusion plate include a first group of through holes and a second group of through holes spaced apart from each other, the connecting lines of the second group of through holes form an inscribed hexagon of the top gas diffusion plate, and the area surrounded by the inscribed hexagon defines the central area of ​​the top gas diffusion plate.

12. The heat treatment equipment according to claim 11, wherein Two adjacent through holes in the edge area of ​​the top gas diffusion plate have a first hole spacing, and two adjacent through holes in the center area of ​​the top gas diffusion plate have a second hole spacing, wherein the first hole spacing is greater than the second hole spacing.

13. The heat treatment equipment according to claim 12, wherein: Compared with the first group of through holes, the second group of through holes is closer to the central area of ​​the top gas diffusion plate, and the number of the second group of through holes is greater than the number of the first group of through holes.

14. The heat treatment equipment according to any one of claims 8 to 13, wherein: The heat treatment equipment further comprises a side air intake device, wherein the side air intake device comprises an air supply portion; The gas inlet end of the gas supplement part is connected to the second gas source, and the gas outlet end of the gas supplement part is configured to extend toward the edge of the processing surface of the workpiece to transport the second process gas supplied by the second gas source to the processing surface of the workpiece to perform the heat treatment.

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