Cleaning device based on quartz heating tube heating and temperature controller construction method
By using quartz heating tubes and temperature sensors in the semiconductor wet cleaning process, combined with flowmeters and PID controllers, the problem of solution temperature accuracy and stability is solved, and the precise control of solution temperature during semiconductor cleaning is achieved.
Patent Information
- Application Number
- CN202411988902.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-04-01
AI Technical Summary
In the semiconductor wet cleaning process, the change in the solution flow rate and indoor temperature in the cleaning tank makes it difficult to guarantee the accuracy and stability of the solution temperature, which affects the cleaning effect of the semiconductor.
A cleaning device based on quartz heating pipe heating is designed, combining a flowmeter and a temperature sensor to obtain the heat transfer coefficient and build a PID controller to achieve accurate control of the solution temperature. Specific steps include obtaining the heat transfer coefficient, building the heat transfer function, and configuring the PID controller to adapt to different states of the cleaning process.
The temperature controller is switched according to the cleaning state and the vacant state, ensuring accurate control of the solution temperature, and improving the temperature stability and efficiency during the cleaning process.
Smart Images
Figure CN119742251A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of heating tubes, and in particular relates to a cleaning device based on quartz heating tube heating and a method for constructing a temperature controller. Background Art
[0002] In the wet cleaning process of semiconductors, the workpiece needs to be placed in a cleaning tank, and the impurities washed out are removed by the cleaning liquid flowing in the cleaning tank. The cleaning liquid needs to be heated during the cleaning process. The cleaning liquid with a set temperature can prevent the semiconductor from being damaged during the cleaning process.
[0003] However, for semiconductor cleaning of different scales, the solution flow rate in the cleaning tank will be adaptively adjusted according to the different semiconductors. At the same time, affected by the changes in indoor temperature, the accuracy and stability of solution heating and temperature control cannot be guaranteed. On this basis, the present application designs a heating cleaning device with a variable adjustable temperature controller. Summary of the invention
[0004] In view of the above problems, the present invention proposes a cleaning device based on quartz heating tube heating, which specifically includes a cleaning tank; a quartz heating tube standard module is arranged in the middle of the cleaning tank, and a liquid inlet and a liquid outlet are arranged at both ends of the cleaning tank; a flow meter is arranged at the liquid inlet; and a temperature sensor for collecting the temperature of the liquid inside the cleaning tank is arranged inside the cleaning tank, as well as an Ethernet gateway and a temperature controller connected to the temperature sensor. The temperature controller construction method includes the following steps:
[0005] S1) calculating the heat transfer coefficient A1 of the solution in the cleaning tank when the solution flow rate is fixed and the heating device is turned on; the heat transfer coefficient η1 of the solution is calculated based on the collected temperatures of the liquid inlet and the liquid outlet and the solution flow rate within a set time, and a heat transfer function is constructed based on the heat transfer coefficient η1;
[0006] S2) constructing a PID controller based on the obtained heat transfer function;
[0007] S3) obtaining the thermal conductivity coefficient η2 of the solution during the cleaning process cycle; and constructing a second heat transfer function based on the heat transfer coefficient η2;
[0008] S4) Adjusting the PID controller based on the obtained second heat transfer function.
[0009] Preferably, the heat transfer coefficient η1 is obtained by the following formula: η1Q = γC (T2-T1) (1)
[0010] Where Q represents the heating load of the quartz heating tube standard module; γ represents the solution flow rate; C represents the specific heat capacity of the solution; T2 represents the water outlet temperature; and T1 represents the water inlet temperature.
[0011] Preferably, constructing a PID controller based on the obtained heat transfer coefficient η1 includes: connecting the PID controller and the heat transfer coefficient in series, and adjusting proportional, integral and differential coefficients of the PID controller based on a preset output value.
[0012] The beneficial effect of the present application is that the present application can switch the temperature controller according to the cleaning state and the vacant state to achieve precise control of the solution temperature. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] Figure 1 Schematic diagram of the temperature controller shown. DETAILED DESCRIPTION
[0014] In order to enable those skilled in the art to better understand the technical solution of the present application, the present invention is further described in detail below in conjunction with the accompanying drawings and the best embodiment.
[0015] A cleaning device based on quartz heating tube heating, specifically comprising a cleaning tank; a quartz heating tube standard module is arranged in the middle of the cleaning tank, and liquid inlets and liquid outlets are arranged at both ends of the cleaning tank; a flow meter is arranged at the liquid inlet; and a temperature sensor for collecting the temperature of the liquid in the cleaning tank is arranged inside the cleaning tank, as well as an Ethernet gateway and a temperature controller connected to the temperature sensor.
[0016] The temperature controller construction method includes the following steps:
[0017] S1) calculating the heat transfer coefficient A1 of the solution in the cleaning tank when the solution flow rate is fixed and the heating device is turned on; the heat transfer coefficient η1 of the solution is calculated based on the collected temperatures of the liquid inlet and the liquid outlet and the solution flow rate within a set time, and a heat transfer function is constructed based on the heat transfer coefficient η1;
[0018] S2) Based on the obtained heat transfer function, a PID controller is constructed; the heat transfer function is based on the original transfer function module of the PID controller, and the heat transfer coefficient η1 is replaced by the corresponding coefficient; the transfer function module is a commonly used PID module and will not be described in detail here.
[0019] S3) obtaining the thermal conductivity coefficient η2 of the solution during the cleaning process cycle; and constructing a second heat transfer function based on the heat transfer coefficient η2;
[0020] S4) adjusting the PID controller based on the obtained second heat transfer function
[0021] The heat transfer coefficient η1 is obtained by the following formula: η1Q = γC(T2-T1) (1)
[0022] Where Q represents the heating load of the quartz heating tube standard module; γ represents the solution flow rate; C represents the specific heat capacity of the solution; T2 represents the water outlet temperature; and T1 represents the water inlet temperature.
[0023] Based on the obtained heat transfer coefficient η1, constructing a PID controller includes: connecting the PID controller and the heat transfer coefficient in series, and adjusting the proportional, integral and differential coefficients of the PID controller based on a preset output value.
[0024] The adjustment of the proportional, integral and differential coefficients includes: collecting the temperature data of the liquid outlet and the cleaning tank during the cycle under two states respectively, and drawing a temperature change curve based on the collected temperature data, and based on the set temperature nodes, finding the nodes where the difference exceeds the preset threshold, and adjusting the integral and differential coefficients based on the nodes that exceed the threshold.
[0025] In the wet cleaning process of semiconductors, the cleaning tank can be divided into two working states, including an empty state and a cleaning state. The empty state is the preliminary preparation stage for cleaning the workpiece. Its main task is to discharge impurities retained by the previous cleaning component and to quickly heat up. The preset temperature to be increased is a value close to the upper limit of the safe temperature range of this type of semiconductor. At this time, since the temperature space for heating is large, a PID controller constructed by the heat transfer coefficient η1 is used to accelerate the heating; the PID controller only heats up at a uniform rate according to the heat transfer efficiency of the solution. Because there is no semiconductor in the solution, during the rapid heating process, the local temperature value will be greater than the temperature value that the semiconductor can withstand. When the temperature rises to the preset range, the PID is switched. The parameters of the controller are in the cleaning state at this time. Since the temperature of the solution will drop locally after the semiconductor falls into the solution, in order to ensure rapid temperature rise without damaging the semiconductor, a PID controller based on the thermal conductivity coefficient η2 is used. Compared with the heat transfer coefficient η1, the thermal conductivity coefficient η2 has the property of relatively slow temperature transfer. Therefore, when adjusting the parameters of the PID controller, the preset increased temperature will be within the range that the semiconductor can withstand, while ensuring that the liquid temperature is higher than the lower limit of the semiconductor cleaning temperature range. The settings of the two PID controller parameters need to be targeted according to the different specifications of the semiconductor, that is, each model of semiconductor will have a targeted setting of the PID controller in the cleaning state.
[0026] Obviously, the above embodiments are merely examples for clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived from these are still within the protection scope of the invention.
Claims
1. A cleaning device based on quartz heating tube heating, characterized in that: It comprises a cleaning tank; a quartz heating tube standard module is arranged in the middle of the cleaning tank, a liquid inlet and a liquid outlet are arranged at both ends of the cleaning tank; a flow meter is arranged at the liquid inlet; and a temperature sensor for collecting the temperature of the liquid inside the cleaning tank, as well as an Ethernet gateway and a temperature controller connected to the temperature sensor.
2. A method for constructing a temperature controller for a cleaning device based on quartz heating tube heating according to claim 1, characterized in that: The following steps are involved: S1) Calculating the heat transfer coefficient A1 of the solution in the cleaning tank when the solution flow rate is fixed and the heating device is turned on; The method includes obtaining the heat transfer coefficient η1 of the solution based on the collected temperatures of the liquid inlet and the liquid outlet and the solution flow rate within a set time, and constructing a heat transfer function based on the heat transfer coefficient η1; S2) constructing a PID controller based on the obtained heat transfer function; S3) obtaining the thermal conductivity coefficient η2 of the solution during the cleaning process cycle; and constructing a second heat transfer function based on the heat transfer coefficient η2; S4) Adjusting the PID controller based on the obtained second heat transfer function.
3. The method according to claim 2, characterized in that The heat transfer coefficient η1 is obtained by the following formula: η1Q = γC (T2-T1) (1) Where Q represents the heating load of the quartz heating tube standard module; γ represents the solution flow rate; C represents the specific heat capacity of the solution; T2 represents the water outlet temperature; and T1 represents the water inlet temperature.
4. The method according to claim 2, characterized in that: The construction of the PID controller based on the obtained heat transfer coefficient η1 includes: connecting the PID controller in series with the heat transfer function, and adjusting the proportional, integral and differential coefficients of the PID controller based on a preset output value. The adjustment of the proportional, integral and differential coefficients includes: respectively collecting the temperature data of the liquid outlet and the cleaning tank within the cycle under two states, and drawing a temperature change curve based on the collected temperature data, and based on the set temperature nodes, obtaining the nodes whose differences exceed the preset threshold value, and adjusting the integral and differential coefficients based on the nodes exceeding the threshold value.