Temperature control implementation method and intelligent equipment

Abstract

The invention provides a temperature control implementation method and intelligent equipment, a system-on-chip obtains first temperature data from a first temperature sensor group, controls a charging integrated circuit to charge a battery or not according to the first temperature data, obtains second temperature data from a second temperature sensor group, controls the charging integrated circuit to charge the battery or not according to the second temperature data, and controls the charging integrated circuit to charge the battery or not according to the second temperature data. And adjusting the output voltage and the output current provided by the micro-control unit to the active heat dissipation assembly according to the second temperature data. According to the invention, the system-on-chip and the charging integrated circuit are arranged separately, so that the risk of over-high local temperature is reduced. And active cooling is realized through the contact arrangement of the active heat dissipation assembly and the system-on-chip. The temperature of the auxiliary board area is collected through the first temperature sensor group, the temperature of the main board area is collected through the second temperature sensor group, the flexibility of heat dissipation control is improved through partition temperature control, and the use experience is improved.

Description

Technical Field

[0001] The present application relates to the field of data processing, and specifically to a temperature control implementation method and an intelligent device. Background Art

[0002] With the significant progress of key technologies such as 5G (Fifth Generation Mobile Communication Technology), AI (Artificial Intelligence), and foldable screens, the functions and forms of smart devices have changed. These technological innovations have not only changed the functions and forms of smart devices, but also had a profound impact on users' daily lives.

[0003] Consumers' demands for smart device functions are becoming increasingly diverse, which has driven smart device manufacturers to continuously develop and innovate to meet market demand. Users' demands for personalization, performance and user experience are increasing. In order to stand out in the fierce market competition, smart device manufacturers continue to add new functional modules to enhance the differentiated competitiveness of their products.

[0004] In summary, smart devices are equipped with more and more functional modules, which leads to higher and higher integration of internal components of smart devices and smaller and smaller space. The SOC (System on a Chip) of smart devices is in a high-load state for a long time, which will lead to over-temperature and frequency reduction, resulting in problems such as lag and frame drop and even device damage. Summary of the invention

[0005] The present application provides a temperature control implementation method and an intelligent device to solve the above problems.

[0006] In a first aspect, the present application provides a smart device, including: A circuit board, the circuit board comprising a sub-board area, a main board area, and a battery area located between the sub-board area and the main board area; a battery, wherein the battery is located in the battery area; A charging integrated circuit, the charging integrated circuit is located in the sub-board area; A system-level chip, the system-level chip is located in the mainboard area, and the system-level chip is connected to the charging integrated circuit; An active heat dissipation component, the active heat dissipation component is arranged on the upper surface of the system-level chip; A first temperature sensor group, the first temperature sensor group is located in the sub-board area, and the first temperature sensor group is connected to the system-level chip; A second temperature sensor group, the second temperature sensor group is located in the mainboard area, and the second temperature sensor group is connected to the system-level chip; A micro control unit is located in the sub-board area and is connected to the active heat dissipation component and the system-level chip.

[0007] In a second aspect, the present application provides a temperature control implementation method, which is applied to the smart device described in the first aspect, and the method comprises the steps of: The system-level chip obtains first temperature data from the first temperature sensor group, and controls the charging integrated circuit to charge the battery according to the first temperature data; The system-level chip obtains second temperature data from the second temperature sensor group, and adjusts the output voltage and output current provided by the microcontroller unit to the active heat dissipation component according to the second temperature data.

[0008] The temperature control implementation method and intelligent device provided by the present application include a circuit board, the circuit board includes a sub-board area, a main board area, and a battery area located between the sub-board area and the main board area; a battery, the battery is located in the battery area; a charging integrated circuit, the charging integrated circuit is located in the sub-board area; a system-level chip, the system-level chip is located in the main board area, and the system-level chip is connected to the charging integrated circuit; an active heat dissipation component, the active heat dissipation component is arranged on the upper surface of the system-level chip; a first temperature sensor group, the first temperature sensor group is located in the sub-board area, and the first temperature sensor group is connected to the system-level chip; a second temperature sensor group, the second temperature sensor group is located in the main board area, and the second temperature sensor group is connected to the system-level chip; a micro control unit, the micro control unit is located in the sub-board area, and the micro control unit is connected to the active heat dissipation component and the system-level chip. The system-level chip obtains first temperature data from the first temperature sensor group, and controls whether the charging integrated circuit charges the battery according to the first temperature data; the system-level chip obtains second temperature data from the second temperature sensor group, and adjusts the output voltage and output current provided by the micro control unit to the active heat dissipation component according to the second temperature data. This application separates the layout of the system-level chip and the charging integrated circuit to separate the two main heat sources, avoid their mutual influence, and reduce the risk of local overtemperature. By setting the active heat dissipation component in contact with the system-level chip, the heat can be quickly transferred from the system-level chip to the outside to achieve active cooling. The temperature of the sub-board area is collected by the first temperature sensor group, and the temperature of the mainboard area is collected by the second temperature sensor group. The temperature of different areas inside the smart device is independently controlled by a partitioned temperature control strategy. According to the temperature conditions of each area, corresponding heat dissipation measures are taken to avoid damage to the device caused by excessive temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0010] Figure 1 This is a main view of the smart device provided in an embodiment of the present application.

[0011] Figure 2 This is a side view of the smart device provided in an embodiment of the present application.

[0012] Figure 3This is a structural schematic diagram of a thermoelectric cooling sheet, a flexible printed circuit board adapter plate and a spring provided in an embodiment of the present application; Figure 4 This is a schematic diagram of the layout of temperature data acquired by the first temperature sensor group and the second temperature sensor group in the smart device provided in an embodiment of the present application.

[0013] Figure 5 It is a flow chart of the temperature control implementation method provided in the embodiment of the present application. DETAILED DESCRIPTION

[0014] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0015] In the description of the embodiments of the present application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0016] In order to enable any person skilled in the art to implement and use the present application, the following description is provided. In the following description, details are listed for the purpose of explanation. It should be understood that those of ordinary skill in the art can recognize that the present application can also be implemented without using these specific details. In other examples, the known process will not be elaborated in detail to avoid unnecessary details that make the description of the present application embodiment obscure. Therefore, the present application is not intended to be limited to the embodiments shown, but is consistent with the widest range of principles and features disclosed in accordance with the embodiments of the present application.

[0017] Smart devices include PMIC (Power Management Integrated Circuit), SOC and circuit boards. PMIC includes charging IC (Integrated Circuit) and charging protection circuit. Charging IC and SOC are concentrated heat sources that generate a lot of heat. Charging IC is responsible for managing the charging process of the battery, including controlling the charging current and voltage to ensure that the battery can be charged safely and efficiently. Charging IC can also adjust the charging current and voltage to adapt to different types of batteries and charging requirements. Charging IC can also monitor the charging status of the battery to ensure the stability of the charging process. Charging IC supports multiple charging modes: such as constant voltage charging, constant current charging, etc., to improve charging efficiency. Charging protection circuit is used to protect batteries and devices from various abnormal conditions that may occur during the charging process. The charging protection circuit can prevent the battery voltage from exceeding its rated voltage to achieve overcharge protection and avoid battery damage. That is, the charging protection circuit can ensure that the battery will not over-discharge during the discharge process to achieve over-discharge protection and extend the battery life. The charging protection circuit can limit the charging and discharging current to achieve overcurrent protection to prevent excessive current from causing damage to the battery or equipment. In addition, the charging protection circuit can quickly cut off the current when a short circuit occurs in the charging or discharging circuit to achieve short-circuit protection and prevent equipment damage.

[0018] In the design of smart devices, the charging integrated circuit and SOC can be centrally arranged on the circuit board. However, this will cause the two concentrated heat sources to couple with each other, that is, their heat may affect each other, resulting in reduced heat dissipation efficiency. In order to solve this problem, the heat dissipation of smart devices usually adopts passive heat dissipation, such as nano-carbon copper, graphene heat dissipation film, VC (Vapor Chamber, vacuum chamber heat dissipation technology) heat dissipation plate, heat dissipation silicone grease and other materials or a combination of heat dissipation layers. However, in this way, SOC is monitoring rather than predicting in advance, that is, SOC will take action when the temperature sensor detects an abnormal increase in temperature, such as reducing heat generation by operating frequency, or accelerating heat dissipation through the heat dissipation layer. This monitoring is a reactive measure rather than a preventive measure. In other words, the monitoring function of SOC is mainly to respond through the monitored temperature data after the temperature has risen to a certain level, rather than predicting and taking measures before the temperature rises, which cannot take measures in advance to prevent overheating.

[0019] The temperature control implementation method and smart device of the present application are described below in conjunction with the drawings in the specification to solve the above-mentioned problems.

[0020] Reference Figure 1 As shown, Figure 1 This is a front view of the smart device 1 provided in the embodiment of the present application. Figure 1 As shown, the smart device 1 includes: A circuit board 10, wherein the circuit board 10 comprises a sub-board area C, a main board area A, and a battery 20 area B located between the sub-board area C and the main board area A; A battery 20, wherein the battery 20 is located in the battery 20 area B; A charging integrated circuit 30, wherein the charging integrated circuit 30 is located in the sub-board area C; A system-level chip 40, wherein the system-level chip 40 is located in the mainboard area A and is connected to the charging integrated circuit 30; An active heat dissipation component 50, wherein the active heat dissipation component 50 is disposed on the upper surface of the system-level chip 40; A first temperature sensor group 60 , the first temperature sensor group 60 is located in the sub-board area C, and the first temperature sensor group 60 is connected to the system-level chip 40 ; A second temperature sensor group 70 , the second temperature sensor group 70 is located in the mainboard area A, and the second temperature sensor group 70 is connected to the system-on-chip 40 ; A micro control unit 80 is located in the sub-board area C and is connected to the active heat dissipation component 50 and the system-on-chip 40 .

[0021] Specifically, the smart device 1 includes but is not limited to a smart phone, a smart tablet, a tablet computer, a smart watch, etc. Figure 1As shown, the smart device 1 includes a circuit board 10, a battery 20, a charging integrated circuit 30, a system-level chip 40, an active heat dissipation component 50, a first temperature sensor group 60, a second temperature sensor group 70, and a micro control unit 80. The circuit board 10 is used as a carrier to connect the electronic components such as the battery 20, the charging integrated circuit 30, the system-level chip 40, the active heat dissipation component 50, the first temperature sensor group 60, the second temperature sensor group 70, and the micro control unit 80. Among them, the circuit board 10 of the smart device 1 is divided into three areas as a carrier, namely, the sub-board area C, the main board area A and the battery 20 area B, and the battery 20 area B is located between the sub-board area C and the main board area A. The battery 20 is arranged in the battery 20 area B to provide power for the device. The charging integrated circuit 30 is arranged in the sub-board area C. The main function of the charging integrated circuit 30 is to control the charging process of the battery 20, including the adjustment of the charging current and voltage, preventing overcharging and over-discharging, etc., to ensure the safety of the battery 20 and extend the service life. The system-level chip 40 is arranged in the mainboard area A, and is the core "brain" of the smart device 1. It integrates many functional modules such as processors and memory. The system-level chip 40 is connected to the charging integrated circuit 30, and can obtain the status information of the battery 20 in real time, so as to perform operations such as battery 20 management. At the same time, the system-level chip 40 is also connected to the active heat dissipation component 50, the first temperature sensor group 60, the second temperature sensor group 70, the micro control unit 80, etc., to achieve the overall control and management of the smart device 1. The active heat dissipation component 50 is arranged on the upper surface of the system-level chip 40. Because the system-level chip 40 generates a lot of heat during operation, the active heat dissipation component 50 can dissipate the heat in time to ensure that the system-level chip 40 can work stably at a suitable temperature and prevent performance degradation or damage due to overheating. The first temperature sensor group 60 is located in the sub-board area C, so as to monitor the temperature of the sub-board area C in real time to obtain the first temperature data, such as the temperature near the charging integrated circuit 30, and feed the first temperature data back to the system-level chip 40, so that the system-level chip 40 can make corresponding adjustments according to the temperature change, such as controlling the charging current to achieve temperature control of the sub-board area C. The second temperature sensor group 70 is located in the mainboard area A, so as to monitor the temperature of the mainboard area A in real time to obtain the second temperature data, focus on the temperature of the system-level chip 40 and other key components, and provide more comprehensive data support for the temperature management and heat dissipation strategy of the smart device 1. The micro control unit 80 is located in the sub-board area C and is connected to the active heat dissipation component 50 and the system-level chip 40. The micro control unit 80 can control the operation of the active heat dissipation component 50 according to the instructions of the system-level chip 40 to achieve temperature control of the mainboard area A.

[0022] Since both the system-level chip 40 and the charging integrated circuit 30 generate a lot of heat when working, if they are arranged together, the heat will accumulate rapidly in the local area, causing the temperature of the area to rise sharply. In this application, the system-level chip 40 and the charging integrated circuit 30 are respectively arranged in the main board area A and the sub-board area C of the circuit board 10 to achieve a separate layout. In this way, the two main heat sources are distributed in different areas, and the heat is dissipated in their respective areas, avoiding excessive concentration of heat in the same area, thereby effectively reducing the local temperature. When the charging IC and SOC are arranged separately, the heat transfer path between the two becomes longer, reducing the efficiency of heat transfer. For example, the heat transferred from the charging IC to the SOC needs to be transferred inside the sub-board area C first, and then transferred to the main board area A through the connecting part of the circuit board 10. The heat loss in this process will increase, which reduces the mutual influence between the two heat sources and the risk of local temperature increase. Since the heat generated by the two heat sources of the charging IC and SOC may be superimposed on each other to form a higher temperature area when the charging IC and SOC are arranged in a centralized manner, the heat generated by each heat source is mainly dissipated in the surrounding area of ​​itself after the present application separates the charging IC and SOC, and will not have a direct superposition effect on another heat source, thereby making the temperature distribution of each area more uniform, effectively avoiding the heat superposition effect, and thus reducing the risk of local excessive temperature. By setting the active heat dissipation component 50 in contact with the system-level chip 40, when the system-level chip 40 generates heat, the active heat dissipation component 50 can quickly transfer the heat from the system-level chip 40 to the outside, thereby achieving active cooling of the system-level chip 40, which can prevent the system-level chip 40 from experiencing performance degradation, freezing or even damage due to overheating, and can also control the temperature of the system-level chip 40 within an appropriate range, so that the system-level chip 40 can continue to operate stably in a high-performance state, provide powerful computing and processing capabilities for the smart device 1, and ensure the normal performance of various functions of the smart device 1. The temperature of the sub-board area C is collected through the first temperature sensor group 60, and the temperature of the mainboard area A is collected through the second temperature sensor group 70, providing an accurate temperature basis for the partition temperature control strategy. Through the temperature data collected by these sensor groups, the SOC can understand the temperature conditions of each area in real time, so as to take corresponding heat dissipation measures for different areas, realize precise temperature control, and avoid affecting the performance and service life of the equipment due to excessively high or low temperature.

[0023] In some embodiments, reference Figure 2 As shown, Figure 2 is a side view of the smart device 1 provided in the embodiment of the present application, such as Figure 2 As shown, the active heat dissipation component 50 includes: a thermoelectric cooling sheet 51, a first heat conducting layer 52, a second heat conducting layer 53, a transfer structure 54, and heat dissipation fins 55; The circuit board 10 is connected to the thermoelectric cooling sheet 51 through the adapter structure 54; The cold surface 51a of the thermoelectric cooling sheet 51 is connected to the upper surface of the system-level chip 40, and the first heat-conducting layer 52 is located between the cold surface 51a and the upper surface of the system-level chip 40; the cold surface 51a of the thermoelectric cooling sheet 51 is close to the system-level chip 40 along the stacking direction Y, and the stacking direction Y is perpendicular to the extension direction of the circuit board 10; The hot surface 51 b of the thermoelectric cooling sheet 51 is connected to the heat dissipation fins 55 , and the second heat conductive layer 53 is located between the hot surface 51 b and the heat dissipation fins 55 ; the hot surface 51 b of the thermoelectric cooling sheet 51 is away from the system-level chip 40 along the stacking direction Y.

[0024] Specifically, the circuit board 10 is connected to the TEC (Thermo-Electric Cooler, thermoelectric cooling sheet 51) through the adapter structure 54. This design not only realizes the physical connection between the two, but also ensures the stability of the TEC during operation. In addition, the adapter structure 54 provides a stable current for the TEC, so that it can work normally and exert a cooling effect. The adapter structure 54 can be fixed in a variety of ways, such as screw fixing, snap connection, etc., to ensure that the TEC is firmly installed on the circuit board 10 and will not be displaced or fall off due to vibration or impact of the equipment.

[0025] TEC works based on the Peltier effect, that is, it uses the absorption and release of heat generated when electric current passes through a circuit composed of different conductors to form a cold side and a hot side. By controlling the magnitude of the current flowing through the hot spot cooling plate, precise temperature control can be achieved. In the present application, the cold surface 51a of the TEC contacts the system-level chip 40 and absorbs the heat generated by the chip, and the hot surface 51b of the TEC transfers the heat to achieve heat transfer and dissipation. The present application uses TEC to achieve efficient cooling effect in a smaller space. It has a high cooling efficiency and can quickly reduce the temperature of the system-level chip 40 in a short time, providing a good heat dissipation environment for the chip and ensuring the stability and performance of the chip when working under high load.

[0026] The cold surface 51a of the TEC is connected to the upper surface of the system-level chip 40. Since there may be tiny gaps or unevenness during actual contact, the first thermal conductive layer 52 is arranged between the cold surface 51a of the TEC and the upper surface of the system-level chip 40. The first thermal conductive layer 52 can fill these gaps and reduce thermal resistance. In this way, the heat conduction efficiency between the cold surface 51a of the TEC and the upper surface of the system-level chip 40 can be improved, the thermal conductivity can be enhanced, and the heat can be transferred from the chip to the TEC more smoothly, thereby improving the overall heat dissipation effect.

[0027] The hot surface 51b of the TEC is connected to the heat sink fins 55, and there is a second heat conducting layer 53 between the hot surface 51b of the TEC and the heat sink fins 55. The second heat conducting layer 53 can serve as a heat transfer bridge to reduce the thermal resistance between the hot surface 51b of the TEC and the heat sink fins 55, and quickly transfer the heat absorbed by the TEC to the heat sink fins 55, thereby increasing the heat conduction speed, so that the heat sink fins 55 can more effectively dissipate heat to the surrounding environment, avoiding heat accumulation inside the TEC, thereby ensuring the cooling efficiency of the TEC and the performance of the entire heat sink assembly, and maintaining the system-level chip 40 to operate at a lower temperature level.

[0028] The heat sink fins 55 are an important component of the heat dissipation assembly, and their main function is to increase the heat dissipation surface area 51b and improve the efficiency of heat dissipation to the surrounding environment. The heat sink fins 55 usually have a plurality of thin sheet structures, which can significantly increase the contact area with the air, so that the heat can be dissipated faster through air convection. The design of the heat sink fins 55 can further optimize the heat dissipation effect. For example, by reasonably designing the shape, spacing and arrangement of the fins, the flow speed and turbulence of the air flowing through the fins can be increased, and the transfer and dissipation of heat can be enhanced. In addition, auxiliary heat dissipation equipment such as fans can be set on the heat sink fins 55 to further accelerate the air flow, improve the heat dissipation performance, and ensure that the system-level chip 40 can remain in a suitable temperature range even when working at high load for a long time.

[0029] It should be noted that the materials of the first heat-conducting layer 52 and the second heat-conducting layer 53 can be high thermal conductivity materials, such as thermally conductive silicone, thermally conductive gel, etc. These materials have good flexibility and adhesion, and can closely fit the upper surface of the chip and the cold surface 51a of the TEC, as well as the hot surface 51b of the TEC and the heat sink fins 55, to ensure effective heat transfer.

[0030] The present application can quickly transfer heat from the system-level chip 40 to the outside through TEC, the first heat-conducting layer 52, the second heat-conducting layer 53, the adapter structure 54, and the heat dissipation fins 55, thereby realizing active cooling of the system-level chip 40. This can prevent the system-level chip 40 from experiencing performance degradation, freezing, or even damage due to overheating. It can also control the temperature of the system-level chip 40 within an appropriate range, so that the system-level chip 40 can continue to operate stably in a high-performance state, provide powerful computing and processing capabilities for the smart device 1, and ensure the normal functioning of various functions of the smart device 1.

[0031] In some embodiments, reference Figure 2 and Figure 3 As shown, Figure 2 is a side view of the smart device 1 provided in an embodiment of the present application, Figure 3Schematic diagram of the structure of the thermoelectric cooling sheet 51, the flexible printed circuit board adapter plate 54b and the spring 54c provided in the embodiment of the present application. Figure 2 and Figure 3 As shown, the transfer structure 54 includes a connecting line 54a, a flexible printed circuit board transfer board 54b and a spring 54c; The thermoelectric cooling sheet 51 is connected to the flexible printed circuit board adapter board 54b via the connecting wire 54a; The flexible printed circuit board adapter plate 54b is connected to the circuit board 10 via a spring sheet 54c.

[0032] Specifically, the transfer structure 54 includes a connecting wire 54a, an FPC (Flexible Printed Circuit, flexible printed circuit board transfer board 54b) and a spring 54c. The connecting wire 54a may include an insulated wire, a high temperature resistant insulating special enameled wire, etc. The diameter of the connecting wire 54a may be less than 0.05 mm. In this way, when space is limited, the connecting wire 54a with a small diameter may significantly improve the signal quality and reduce electromagnetic interference. Using solder and welding tools, the connecting wire 54a is welded to the connection point between the TEC and the FPC, i.e., the pad 54d, to ensure that the current can smoothly pass through the thermoelectric cooling sheet 51 to achieve a cooling effect. The FPC is connected to the circuit board 10 through the spring 54c. This flexible connection method ensures the reliability and flexibility of the connection, while allowing a certain amount of mechanical displacement to improve the stability and reliability of the system.

[0033] In some embodiments, reference Figure 2 and Figure 4 As shown, Figure 4 : is a schematic diagram of the layout of the first temperature sensor group 60 and the second temperature sensor group 70 acquiring temperature data in the smart device 1 provided in the embodiment of the present application, such as Figure 2 and Figure 4 As shown, the smart device 1 also includes a charging protection circuit (not shown in the figure), a functional module (not shown in the figure), an upper shell 90, and a lower shell 11 whose shape matches the upper shell 90. An accommodating space is formed inside the lower shell 11, and the upper shell 90 includes a plurality of air outlets 91; the functional module includes a first radio frequency component (not shown in the figure), a second radio frequency component (not shown in the figure), a camera (not shown in the figure) and a flash (not shown in the figure); the functional module, the circuit board 10, the battery 20, the charging integrated circuit 30, the charging protection circuit, the active heat dissipation component 50, the first temperature sensor group 60, the second temperature sensor group 70 and the micro control unit 80 are located in the accommodating space 12, the charging protection circuit is located in the secondary board area C and away from the charging integrated circuit 30, and the functional module is located in the main board area A; The first temperature sensor group 60 includes m first temperature sensors, i of the m first temperature sensors are used to detect the first temperature of the charging protection circuit, and j of the m first temperature sensors are used to detect the second temperature of the charging integrated circuit 30; m, i and j are all positive integers, and m is equal to the sum of i and j; The second temperature sensor group 70 includes n second temperature sensors, a of the n second temperature sensors are used to respectively detect the third temperature of the first RF component and the fourth temperature of the second RF component, b of the n second temperature sensors are used to detect the fifth temperature of the system-level chip 40, c of the n second temperature sensors are used to detect the sixth temperature of the camera, d of the n second temperature sensors are used to detect the seventh temperature of the flash, e of the n second temperature sensors are used to detect the eighth temperature of the lower shell 11, f of the n second temperature sensors are used to detect the ninth temperature of the hot surface 51b of the thermoelectric cooling sheet 51, and g of the n second temperature sensors are used to detect the tenth temperature of the battery 20; n, a, b, c, d, e, f and g are all positive integers, and n is equal to the sum of a, b, c, d, e, f and g.

[0034] Specifically, the mainboard area A of the smart device 1 includes a rear camera decorative sub-area 12, which refers to the area around the camera on the back cover of the mobile phone. The rear camera decorative sub-area 12 is usually used to install the camera module and related decorative components (such as insulating decorative parts, decorative rings and lenses). By enlarging the rear camera decorative sub-area 12, more space can be provided for the active heat dissipation component 50 without sacrificing the appearance of the smart device 1. In this way, the heat dissipation component can be effectively arranged in the compact internal structure of the smart device 1, thereby improving the heat dissipation efficiency. The first RF component is one of the 2 / 3G RF component and the 4 / 5G RF component, and the second RF component is the other of the 2 / 3G RF component and the 4 / 5G RF component. The smart device 1 also includes a charging protection circuit, a functional module, an upper shell 90 and a lower shell 11. A containing space is formed inside the lower shell 11, and the upper shell 90 includes a plurality of air outlets 91 for heat dissipation. The functional module includes a first RF component, a second RF component, a camera and a flash, all of which are located in the mainboard area A. The charging protection circuit is located in the sub-board area C and away from the charging integrated circuit 30. In this way, the charging protection circuit and the charging integrated circuit 30 are independently arranged to ensure the safety and high reliability of the smart device 1 during the charging process. In addition, the upper shell 90 is provided with a plurality of air outlets 91, which are in contact with the air through the air outlets 91 to achieve radiation and convection heat dissipation. The air outlets 91 of the upper shell 90 are combined with the active heat dissipation component 50 to effectively improve the heat dissipation efficiency and extend the service life of the device.

[0035] In order to fully obtain the temperature information of the smart device 1, a first temperature sensor group 60 and a second temperature sensor group 70 are installed. The first temperature sensor group 60 includes m first temperature sensors, i of the m first temperature sensors are used to detect the first temperature of the charging protection circuit, and j of the m first temperature sensors are used to detect the second temperature of the charging integrated circuit 30, m = i + j, where m, i and j are all positive integers. The second temperature sensor group 70 includes n second temperature sensors, wherein a of the n second temperature sensors is used to detect the third temperature of the first RF component and the fourth temperature of the second RF component respectively, b of the n second temperature sensors is used to detect the fifth temperature of the system-level chip 40, c of the n second temperature sensors is used to detect the sixth temperature of the camera, d of the n second temperature sensors is used to detect the seventh temperature of the flash, e of the n second temperature sensors is used to detect the eighth temperature of the lower shell 11, f of the n second temperature sensors is used to detect the ninth temperature of the hot surface 51b of the thermoelectric cooling sheet 51, and g of the n second temperature sensors is used to detect the tenth temperature of the battery 20, n=a+b+c+d+e+f+g, wherein n, a, b, c, d, e, f and g are all positive integers. The first temperature sensor and the second temperature sensor may be any one of NTC (Negative Temperature Coefficient Thermistor, negative temperature coefficient thermistor), thermistor diode, semiconductor temperature sensor, bimetallic temperature sensor, and the sensor type of the first temperature sensor and the second temperature sensor may be the same or different. In the present application, the first temperature sensor and the second temperature sensor preferably use NTC.

[0036] The present application detects the first temperature of the charging protection circuit of the smart device 1, the second temperature of the charging integrated circuit 30, the third temperature of the first RF component, the fourth temperature of the second RF component, the fifth temperature of the system-level chip 40, the sixth temperature of the camera, the seventh temperature of the flash, the eighth temperature of the lower shell 11, the ninth temperature of the hot surface 51b of the thermoelectric cooling sheet 51, and the tenth temperature of the battery 20. In this way, not only can the temperature of each area inside the smart device 1 be fully monitored through multiple temperature sensors, but also based on the above temperature acquisition combined with the active heat dissipation component 50, the system-level chip 40 and the microcontroller unit 80, it is possible to take corresponding heat dissipation measures for different areas according to the temperature feedback of the temperature sensors connected to each key component in different areas (i.e., the above charging protection circuit, the charging integrated circuit 30, the system-level chip 40, the battery 20, the functional module, the lower shell 11, and the hot surface 51b of the thermoelectric cooling sheet 51), so as to achieve precise temperature control, ensure that the device operates within a safe temperature range, and avoid affecting the performance and service life of the device due to excessively high or low temperature.

[0037] Reference Figure 5 As shown, Figure 5 is a flow chart of a temperature control implementation method provided in an embodiment of the present application. Figure 5 The flowchart shown shows a logical order, but in some cases, the steps shown or described may be performed in a different order than that shown in the figure. The temperature control implementation method provided in the embodiment of the present application is applied to a smart device 1, such as Figure 5 As shown, the temperature control implementation method includes the steps of: S100, the system-level chip 40 obtains first temperature data from the first temperature sensor group 60, and controls the charging integrated circuit 30 to charge the battery 20 according to the first temperature data; S200 , the system-on-chip 40 obtains second temperature data from the second temperature sensor group 70 , and adjusts the output voltage and output current provided by the microcontroller unit 80 to the active heat dissipation component 50 according to the second temperature data.

[0038] Specifically, the system-level chip 40 obtains the temperature data of the sub-board area C, that is, the first temperature data, from the first temperature sensor group 60. In this way, the system-level chip 40 can determine whether the temperature of the sub-board area C is within the safe range based on the first temperature data. If the temperature of the sub-board area C is too high, that is, the temperature exceeds the maximum value of the safe range, the system-level chip 40 will control the charging integrated circuit 30 to stop charging the battery 20 to prevent safety problems caused by overheating. If the temperature of the sub-board area C is normal, that is, the temperature is within the safe range, the charging integrated circuit 30 continues to charge the battery 20. In addition, the system-level chip 40 also obtains the temperature data of the mainboard area A, that is, the second temperature data, from the second temperature sensor group 70. In this way, the system-level chip 40 determines whether the temperature of the mainboard area A is within the safe range based on the second temperature data. If the temperature of the mainboard area A is too high, that is, the temperature exceeds the maximum value of the safe range, the system-level chip 40 will adjust the output voltage and output current provided by the micro control unit 80 to the active heat dissipation component 50, increase the heat dissipation power, and reduce the temperature of the system-level chip 40. If the temperature of the mainboard area A is normal, that is, the temperature is within the safe range, the current heat dissipation state is maintained.

[0039] The present application monitors and controls the temperature of the smart device 1 in the charging process in real time through the first temperature sensor group 60 and the second temperature sensor group 70. In combination with the active heat dissipation component 50, the system-level chip 40 and the microcontroller unit 80, it can stop charging the battery 20 in the battery 20 area B adjacent to the sub-board area C when the temperature of the sub-board area C is too high, so as to prevent the battery 20 from overheating, reduce the damage and safety risks of the battery 20, and improve safety. In addition, by real-time monitoring of the temperature of the system-level chip 40, the temperature of the system-level chip 40 can be adjusted in real time through the active heat dissipation component 50 to ensure the stability and performance of the system-level chip 40 in high-load applications (such as games, video editing), multi-tasking and long-term use, providing users with a more reliable and efficient use experience. According to the actual temperature situation, the corresponding heat dissipation measures are dynamically taken to achieve accurate temperature control, ensure that the smart device 1 operates within a safe temperature range, avoid the performance of the smart device 1 being affected by excessively high or low temperatures, and extend the service life of the smart device 1.

[0040] In the present application, the system-level chip 40 and the charging integrated circuit 30 are respectively arranged in the main board area A and the sub-board area C of the circuit board 10 to achieve a separate layout. In this way, the two main heat sources are distributed in different areas, and the heat is dissipated in their respective areas, avoiding excessive concentration of heat in the same area, thereby effectively reducing the local temperature. When the charging IC and SOC are arranged separately, the heat transfer path between the two becomes longer, reducing the efficiency of heat transfer. For example, the heat transfer from the charging IC to the SOC needs to be transferred inside the sub-board area C first, and then transferred to the main board area A through the connecting part of the circuit board 10. The heat loss in this process will increase, which will reduce the mutual influence between the two heat sources and reduce the risk of local temperature increase. Since the heat generated by the two heat sources of the charging IC and SOC may be superimposed on each other when the charging IC and SOC are arranged in a centralized manner, a higher temperature area is formed. After the charging IC and SOC are separately arranged in the present application, the heat generated by each heat source is mainly dissipated in the surrounding area of ​​itself, and will not have a direct superposition effect on the other heat source, so that the temperature distribution of each area is more uniform, effectively avoiding the heat superposition effect, and thus reducing the risk of excessive local temperature. By setting the active heat dissipation component 50 in contact with the system-level chip 40, when the system-level chip 40 generates heat, the active heat dissipation component 50 can quickly transfer the heat from the system-level chip 40 to the outside, thereby realizing active cooling of the system-level chip 40, which can prevent the system-level chip 40 from experiencing performance degradation, freezing or even damage due to overheating, and can also control the temperature of the system-level chip 40 within an appropriate range, so that the system-level chip 40 can continue to run stably in a high-performance state, provide powerful computing and processing capabilities for the smart device 1, and ensure the normal functioning of various functions of the smart device 1. The temperature of the auxiliary board area C is collected by the first temperature sensor group 60, and the temperature of the main board area A is collected by the second temperature sensor group 70, providing an accurate temperature basis for the partition temperature control strategy. Through the temperature data collected by these sensor groups, the SOC can understand the temperature status of each area in real time, so as to take corresponding heat dissipation measures for different areas, realize accurate temperature control, and avoid affecting the performance and service life of the device due to excessively high or low temperature.

[0041] In some embodiments, the first temperature data includes a first temperature of the charging protection circuit and a second temperature of the charging integrated circuit 30; the step S100 of controlling whether the charging integrated circuit 30 charges the battery 20 according to the first temperature data includes the following steps: S110, comparing the first temperature with a first preset temperature upper limit value and a first preset temperature lower limit value, and comparing the second temperature with a second preset temperature upper limit value and a second preset temperature lower limit value; S120, if the first temperature is higher than the first preset temperature upper limit, and / or the second temperature is higher than the second preset temperature upper limit, generating a first control signal and sending it to the charging integrated circuit 30, so that the charging integrated circuit 30 controls to stop charging the battery 20 according to the first control signal; S130. If, when the power source is connected, the first temperature is higher than the second preset temperature lower limit value and lower than the first temperature upper limit value, the second temperature is higher than the second temperature lower limit value and lower than the second preset temperature upper limit value, and the second temperature is lower than the second preset temperature lower limit value, a second control signal is generated and sent to the charging integrated circuit 30, so that the charging integrated circuit 30 charges the battery 20 according to the second control signal.

[0042] Specifically, the system-level chip 40 obtains the temperature threshold in advance, and the temperature threshold includes a first preset temperature upper limit value T1_MAX, a first preset temperature lower limit value T1_MIN, a second preset temperature upper limit value T2_MAX, and a second preset temperature lower limit value T2_MIN. The system-level chip 40 obtains the first temperature data at each moment including the first temperature T1 of the charging protection circuit and the second temperature T2 of the charging integrated circuit 30. Then, the system-level chip 40 compares the first temperature T1 with the first preset temperature upper limit value T1_MAX and the first preset temperature lower limit value T1_MIN, and compares the second temperature T2 with the second preset temperature upper limit value T2_MAX and the second preset temperature lower limit value T2_MIN. If the first temperature T1 is higher than the first preset temperature upper limit T1_MAX but the second temperature T2 is lower than the second preset temperature upper limit T2_MAX, that is, T1>T1_MAX and T2_MIN<T2<T2_MAX; or the first temperature T1 is lower than the first preset temperature upper limit T1_MAX but the second temperature T2 is higher than the second preset temperature upper limit T2_MAX, that is, T2>T2_MAX and T1_MIN<T1<T1_MAX; or the first temperature T1 is higher than the first preset temperature upper limit T1_MAX and the second temperature T2 is higher than the second preset temperature upper limit T2_MAX, that is, T1≥T1_MAX and T2≥T2_MAX (or T1>T1_MAX and T2>T2_MAX), then the system-level chip 40 generates a first control signal STOP_CHARGE and sends it to the charging integrated circuit 30, so that the charging integrated circuit 30 stops charging the battery 20 according to the first control signal STOP_CHARGE. Of course, if the first temperature T1 is higher than the first preset temperature lower limit T1_MIN and lower than the first preset temperature upper limit T1_MAX, and the second temperature T2 is higher than the second preset temperature lower limit T2_MIN and lower than the second preset temperature upper limit T2_MAX, that is, T1_MIN<T1<T1_MAX and T2_MIN<T2<T2_MAX, it indicates that the temperature inside the smart device 1 can allow the battery 20 to enter a charging state. In this way, when the charging interface of the smart device 1 is connected to a power source for wired charging, or the smart device 1 is placed on a charger connected to a power source for wireless charging, the system-level chip 40 generates a second control signal START_CHARGE and sends it to the charging integrated circuit 30, so that the charging integrated circuit 30 starts charging the battery 20.

[0043] The present application ensures that charging is stopped when the temperature is too high by accurately monitoring the temperature of the charging protection circuit and the charging integrated circuit 30, thereby preventing the battery 20 from overheating and being damaged, reducing safety risks, and improving the safety and reliability of the charging process. In addition, by accurately monitoring the temperature of the charging protection circuit and the charging integrated circuit 30, charging is started when the temperature is appropriate, ensuring the efficiency of the charging process and the health of the battery 20 to optimize the charging efficiency. The present application avoids charging the battery 20 in a high or low temperature environment, reduces the chemical reaction and aging rate of the battery 20, and extends the service life of the battery 20.

[0044] In some embodiments, the smart device 1 further includes a first RF component, a second RF component, a camera and a flash; the second temperature data includes a third temperature of the first RF component, a fourth temperature of the second RF component, a fifth temperature of the system-level chip 40, a sixth temperature of the camera, a seventh temperature of the flash, an eighth temperature of the lower housing 11, a ninth temperature of the hot surface 51b of the thermoelectric cooling sheet 51 and a tenth temperature of the battery 20; the step S200, adjusting the output voltage and output current provided by the microcontroller unit 80 to the active heat dissipation component 50 according to the second temperature data, includes the steps of: S210, acquiring the instantaneous thermal power of the thermoelectric cooling sheet 51 at the first moment according to the ninth temperature at the first moment and the fifth temperature at the first moment; S220, obtaining the instantaneous power and thermal capacity of the motherboard in the motherboard area A at the first moment; S230, obtaining the instantaneous power value corresponding to each heating element in the smart device 1 in the working state, and the total instantaneous power value corresponding to all the heating elements in the working state; the heating element includes the first RF component, the second RF component, the camera, the flash, the thermoelectric cooling sheet 51, the battery 20 and the system-level chip 40; S240, taking the instantaneous power value corresponding to each of the heating elements in the working state as the dividend and the total instantaneous power value as the divisor to obtain the weight coefficient corresponding to each of the heating elements; S250, multiplying the weight coefficient corresponding to the heating element by the temperature corresponding to the heating element at the first moment, and adding the product results corresponding to all the heating elements to obtain the initial temperature of the mainboard area A at the first moment; S260, calculating a predicted temperature of the mainboard region A at the second moment according to the instantaneous thermal power, the mainboard instantaneous power, the heat capacity, the second moment, the first moment, and the initial temperature corresponding to the first moment; the second moment is later than the first moment; S270, obtaining a first temperature setting range of the mainboard area A and a second temperature setting range of the lower housing 11; S280, determining whether the initial temperature corresponding to the first moment and the eighth temperature corresponding to the first moment meet a first preset condition, wherein the first preset condition is that the initial temperature is lower than an upper limit value of the first temperature setting range, and the eighth temperature corresponding to the first moment is lower than an upper limit value of the second temperature setting range; S290, if the first preset condition is met, determining whether the predicted temperature corresponding to the second moment and the eighth temperature corresponding to the second moment meet a second preset condition, the second preset condition being that the predicted temperature is lower than the first safety temperature, and the eighth temperature corresponding to the second moment is lower than the second safety temperature, the first safety temperature is equal to the difference between the upper limit value of the first temperature setting range and the first value, and the second safety temperature is equal to the difference between the upper limit value of the second temperature setting range and the second value; S295. If the second preset condition is not met, generate and send a third control signal to the micro control unit 80, so that the micro control unit 80 gradually reduces the output voltage and the output current provided to the active heat dissipation component 50 according to the third control signal.

[0045] Specifically, the second temperature data acquired by the system-level chip 40 at each moment includes the third temperature T3 of the first RF component, the fourth temperature T4 of the second RF component, the fifth temperature T5 of the system-level chip 40, the sixth temperature T6 of the camera, the seventh temperature T7 of the flash, the eighth temperature T8 of the lower housing 11, the ninth temperature T9 of the hot surface 51b of the thermoelectric cooling sheet 51, and the tenth temperature T10 of the battery 20. Then, the system-level chip 40 calculates the instantaneous thermal power of the thermoelectric cooling sheet 51 at the first moment according to the ninth temperature of the hot surface 51b of the thermoelectric cooling sheet 51 at the first moment and the fifth temperature of the system-level chip 40 at the first moment. The instantaneous power and thermal capacity of the motherboard area A at the first moment are measured and obtained by MCC-DAQ (Measurement Computing Corporation Data Acquisition System). The instantaneous power value corresponding to each heating element in the working state of the smart device 1 and the total instantaneous power value corresponding to all heating elements in the working state are measured and obtained by MCC-DAQ. In this way, the system-level chip 40 obtains the instantaneous power value corresponding to each heating element in the working state and the total instantaneous power value corresponding to all heating elements in the working state from MCC-DAQ. Then, the system-level chip 40 uses the instantaneous power value corresponding to each heating element in the working state as the dividend and the total instantaneous power value as the divisor to calculate the weight coefficient corresponding to each heating element, that is, the heating element, namely the first RF component, the second RF component, the camera, the flash, the thermoelectric cooling sheet 51 and the battery 20 and the system-level chip 40 have corresponding instantaneous power values ​​in the working state respectively P1, P2, P3, P4, P5, P6, P7, and the total instantaneous power Psum=P1+P2+P3+P4+P5+P6+P7. Thus, the weight systems corresponding to the first RF component, the second RF component, the camera, the flash, the thermoelectric cooling sheet 51, the battery 20 and the system-level chip 40 are P1 / Psum, P2 / Psum, P3 / Psum, P4 / Psum, P5 / Psum, P6 / Psum, P7 / Psum respectively.

[0046] The n second temperature sensors of the second temperature sensor group 70 are used to measure the temperature to obtain the third temperature of the first RF component, the fourth temperature of the second RF component, the fifth temperature of the system-level chip 40, the sixth temperature of the camera, the seventh temperature of the flash, the eighth temperature of the lower housing 11, the ninth temperature of the hot surface 51b of the thermoelectric cooling sheet 51, and the tenth temperature of the battery 20. The temperature corresponding to each heating element is multiplied by its corresponding weight coefficient, and then the sum is obtained to obtain the initial temperature at the first moment. The calculation formula is as follows: T0=(P1 / Psum×T3)+(P2 / Psum×T4)+(P3 / Psum×T5)+(P4 / Psum×T6)+(P5 / Psum×T7)+(P6 / Psum×T9)+(P7 / Psum×T10).

[0047] The system-level chip 40 calculates the predicted temperature of the motherboard area A at the second moment according to the instantaneous thermal power, the instantaneous power of the motherboard, the heat capacity value, the second moment, the first moment, and the initial temperature corresponding to the first moment. After the system-level chip 40 obtains the first temperature setting range of the motherboard area A and the second temperature setting range of the lower shell 11, the system-level chip 40 determines whether the initial temperature corresponding to the first moment and the eighth temperature corresponding to the lower shell 11 at the first moment meet the first preset condition, that is, the initial temperature corresponding to the first moment is lower than the upper limit of the first temperature setting range, and the eighth temperature corresponding to the first moment is lower than the upper limit of the second temperature setting range. The first preset condition can be expressed as T0∈T0ok and T8a∈Thok. For example, T0ok=(30℃, 50℃) can be set. If the first preset condition is met, the system-level chip 40 further determines whether the predicted temperature corresponding to the second moment and the eighth temperature corresponding to the second moment meet the second preset condition, that is, the predicted temperature corresponding to the second moment is lower than the first safety temperature, and the eighth temperature corresponding to the second moment is lower than the second safety temperature. The second preset condition can be expressed as T1∈T0ok and T8b∈Thok. If the second preset condition is not met, the system-level chip 40 generates a third control signal and sends it to the micro control unit 80. The micro control unit 80 gradually reduces the output voltage and output current provided to the active heat dissipation component 50 according to the received third control signal.

[0048] This application gradually lowers the output voltage and output current provided to the active heat dissipation component 50 when the temperature is too high, which can make the temperature control of the smart device 1 more delicate, avoid the smart device 1 from running for a long time in a high or low temperature environment, reduce the thermal stress and chemical reaction of the smart device 1, prevent the smart device 1 from overheating and damage, reduce safety risks, improve safety, and extend the service life of the smart device 1. When the temperature is too high, the output voltage and output current provided to the active heat dissipation component 50 are gradually lowered, so that the SOC can be cooled down in time and quickly, thereby allowing the smart device 1 to maintain high-performance operation, ensuring that the smart device 1 maintains the best performance and safety in various usage scenarios (such as charging with the screen on and playing while charging), and providing users with a more reliable and efficient usage experience.

[0049] In some embodiments, it also includes: If there is a target component among the monitored heating components, a fourth control signal is generated to the target component so that the target component is switched to a stop working state, and the target component is the heating component whose temperature value is lower than the corresponding maximum temperature.

[0050] Specifically, the SOC determines whether T0∈T0ok and T8a∈Thok are both true. If not, it means that the temperature of the mainboard area A exceeds the safe range. The SOC can monitor the temperature of each heating component at every moment in real time. At a certain moment, the temperature of one of the heating elements is too high, that is, the temperature exceeds its corresponding maximum temperature. Then, the SOC can directly shut down the operation of the heating element to reduce heat generation of the equipment.

[0051] For example, the normal operating temperature of the camera may be set to (-25° C., 70° C.). If the fifth temperature T5 of the SOC is greater than 70° C. at a certain moment, the SOC directly generates a fourth control signal to turn off the camera.

[0052] In some embodiments, the step of obtaining the instantaneous thermal power of the thermoelectric cooling sheet 51 at the first moment according to the ninth temperature at the first moment and the fifth temperature at the first moment comprises the following steps: Substitute the ninth temperature of the hot surface 51b of the thermoelectric cooling sheet 51 at the first moment and the fifth temperature of the system-level chip 40 at the first moment into the following formula (1) to calculate the instantaneous thermal power; (1) in, is the instantaneous thermal power, is the Seebeck coefficient of the thermoelectric cooling sheet 51, is the output current provided by the micro control unit 80 to the active heat dissipation component 50, is the equivalent resistance of the thermoelectric cooling sheet 51, is the temperature difference between the cold surface 51a and the hot surface 51b of the thermoelectric cooling sheet 51, which is equal to the difference between the ninth temperature of the hot surface 51b of the thermoelectric cooling sheet 51 at the first moment and the fifth temperature of the system-level chip 40 at the first moment.

[0053] In some embodiments, the step of calculating the predicted temperature of the mainboard region A at the second moment according to the instantaneous thermal power, the mainboard instantaneous power, the heat capacity value, the second moment, the first moment, and the initial temperature corresponding to the first moment comprises the steps of: Substitute the instantaneous thermal power, the instantaneous power of the mainboard, the heat capacity, the second moment, the first moment and the initial temperature corresponding to the first moment into the following formula (2) to calculate the predicted temperature; (2) in, is the predicted temperature corresponding to the second moment, is the heat capacity value of the mainboard area at the first moment, For the first moment, For the second moment, is the instantaneous power of the mainboard in the mainboard area at the first moment, is the instantaneous thermal power of the thermoelectric cooling sheet at the first moment, is the initial temperature of the mainboard area at the first moment.

[0054] In specific implementation, the above units or modules can be implemented as independent entities, or can be arbitrarily combined to be implemented as the same or several entities. The above units or modules can refer to the previous method embodiments to implement data collection for supply chain management projects, which will not be repeated here.

[0055] Those skilled in the art can understand that all or part of the steps in the various methods of the above embodiments can be completed by instructions, or by controlling related hardware through instructions, and the instructions can be stored in a computer-readable storage medium, and loaded and executed by a processor to implement the above method embodiments. The computer-readable storage medium may include: a read-only memory (ROM), a random access memory (RAM), a disk or an optical disk, etc.

[0056] In the above embodiments, the description of each embodiment has its own emphasis. For the part not described in detail in a certain embodiment, reference can be made to the relevant description of other embodiments. Those skilled in the art can clearly understand that for the convenience and simplicity of description, the specific working process and beneficial effects of the data acquisition system and its corresponding units described above can refer to the description of the temperature control implementation method in the above embodiment, and will not be repeated here.

[0057] The above is a detailed introduction to a temperature control implementation method and system provided in an embodiment of the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A smart device, characterized in that: include: A circuit board, the circuit board comprising a sub-board area, a main board area, and a battery area located between the sub-board area and the main board area; a battery, wherein the battery is located in the battery area; A charging integrated circuit, the charging integrated circuit is located in the sub-board area; A system-level chip, the system-level chip is located in the mainboard area, and the system-level chip is connected to the charging integrated circuit; An active heat dissipation component, the active heat dissipation component is arranged on the upper surface of the system-level chip; A first temperature sensor group, the first temperature sensor group is located in the sub-board area, and the first temperature sensor group is connected to the system-level chip; A second temperature sensor group, the second temperature sensor group is located in the mainboard area, and the second temperature sensor group is connected to the system-level chip; A micro control unit is located in the sub-board area and is connected to the active heat dissipation component and the system-level chip.

2. The smart device according to claim 1, characterized in that: The active heat dissipation component includes: a thermoelectric cooling sheet, a first heat-conducting layer, a second heat-conducting layer, a transfer structure, and heat dissipation fins; The circuit board is connected to the thermoelectric cooling sheet through the adapter structure; The cold surface of the thermoelectric cooling sheet is connected to the upper surface of the system-level chip, and the first heat-conducting layer is located between the cold surface and the upper surface of the system-level chip; the cold surface of the thermoelectric cooling sheet is close to the system-level chip along a stacking direction, and the stacking direction is perpendicular to the extension direction of the circuit board; The hot surface of the thermoelectric cooling sheet is connected to the heat sink fins, and the second heat conducting layer is located between the hot surface and the heat sink fins; the hot surface of the thermoelectric cooling sheet is away from the system-level chip along the stacking direction.

3. The smart device according to claim 2, characterized in that: The transfer structure includes a connecting line, a flexible printed circuit board transfer plate and a spring; The thermoelectric cooling sheet is connected to the flexible printed circuit board adapter plate through the connecting wire; The flexible printed circuit board adapter plate is connected to the circuit board via a spring sheet.

4. The smart device according to claim 2, characterized in that: The smart device further comprises a charging protection circuit, a functional module, an upper shell, and a lower shell shaped to match the upper shell, wherein a housing space is formed inside the lower shell, and the upper shell comprises a plurality of air outlets; the functional module comprises a first radio frequency component, a second radio frequency component, a camera, and a flash; the functional module, the circuit board, the battery, the charging integrated circuit, the charging protection circuit, the active heat dissipation component, the first temperature sensor group, the second temperature sensor group, and the micro control unit are located in the housing space, the charging protection circuit is located in the secondary board area and away from the charging integrated circuit, and the functional module is located in the main board area; The first temperature sensor group includes m first temperature sensors, i of the m first temperature sensors are used to detect the first temperature of the charging protection circuit, and j of the m first temperature sensors are used to detect the second temperature of the charging integrated circuit; m, i and j are all positive integers, and m is equal to the sum of i and j; The second temperature sensor group includes n second temperature sensors, a second temperature sensor among the n second temperature sensors is used to detect a third temperature of the first RF component and a fourth temperature of the second RF component respectively, b second temperature sensors among the n second temperature sensors are used to detect a fifth temperature of the system-level chip, c second temperature sensors among the n second temperature sensors are used to detect a sixth temperature of the camera, d second temperature sensors among the n second temperature sensors are used to detect a seventh temperature of the flash, e second temperature sensors among the n second temperature sensors are used to detect an eighth temperature of the lower housing, f second temperature sensors among the n second temperature sensors are used to detect a ninth temperature of the hot surface of the thermoelectric cooling sheet, and g second temperature sensors among the n second temperature sensors are used to detect a tenth temperature of the battery; n, a, b, c, d, e, f and g are all positive integers, and n is equal to the sum of a, b, c, d, e, f and g.

5. A temperature control implementation method, characterized in that: Applied to the smart device according to any one of claims 1 to 4, the method comprises the steps of: The system-level chip obtains first temperature data from the first temperature sensor group, and controls the charging integrated circuit to charge the battery according to the first temperature data; The system-level chip obtains second temperature data from the second temperature sensor group, and adjusts the output voltage and output current provided by the microcontroller unit to the active heat dissipation component according to the second temperature data.

6. The temperature control method according to claim 5, characterized in that: The first temperature data includes a first temperature of the charging protection circuit and a second temperature of the charging integrated circuit; and controlling whether the charging integrated circuit charges the battery according to the first temperature data includes the steps of: Compare the first temperature with a first preset temperature upper limit value and a first preset temperature lower limit value, and compare the second temperature with a second preset temperature upper limit value and a second preset temperature lower limit value; If the first temperature is higher than the first preset temperature upper limit, and / or the second temperature is higher than the second preset temperature upper limit, a first control signal is generated and sent to the charging integrated circuit, so that the charging integrated circuit controls to stop charging the battery according to the first control signal; If the first temperature is higher than the second preset temperature lower limit and lower than the first temperature upper limit when the power is connected, the second temperature is higher than the second temperature lower limit and lower than the second preset temperature upper limit, and the second temperature is lower than the second preset temperature lower limit, a second control signal is generated and sent to the charging integrated circuit, so that the charging integrated circuit charges the battery according to the second control signal.

7. The temperature control method according to claim 5, characterized in that: The smart device further includes a first RF component, a second RF component, a camera and a flash; the second temperature data includes a third temperature of the first RF component, a fourth temperature of the second RF component, a fifth temperature of the system-level chip, a sixth temperature of the camera, a seventh temperature of the flash, an eighth temperature of the lower housing, a ninth temperature of the hot surface of the thermoelectric cooling sheet and a tenth temperature of the battery; the output voltage and output current provided by the microcontroller to the active heat dissipation component according to the second temperature data include the following steps: According to the ninth temperature at the first moment and the fifth temperature at the first moment, acquiring the instantaneous thermal power of the thermoelectric cooling plate at the first moment; Obtaining the instantaneous power and thermal capacity of the motherboard in the motherboard area at the first moment; Obtaining the instantaneous power value corresponding to each heating element in the smart device in a working state, and the total instantaneous power value corresponding to all the heating elements in a working state; the heating element includes the first radio frequency component, the second radio frequency component, the camera, the flash, the thermoelectric cooling sheet, the battery, and the system-level chip; Taking the instantaneous power value corresponding to each of the heating elements in the working state as the dividend and the total instantaneous power value as the divisor to obtain the weight coefficient corresponding to each of the heating elements; The weight coefficient corresponding to the heating element is multiplied by the temperature corresponding to the heating element at the first moment, and the product results corresponding to all the heating elements are added together to obtain the initial temperature of the mainboard area at the first moment; The predicted temperature of the mainboard area at the second moment is calculated according to the instantaneous thermal power, the mainboard instantaneous power, the heat capacity value, the second moment, the first moment and the initial temperature corresponding to the first moment; the second moment is later than the first moment; Acquire a first temperature setting range of the mainboard area and a second temperature setting range of the lower housing; Determining whether the initial temperature corresponding to the first moment and the eighth temperature corresponding to the first moment meet a first preset condition, wherein the first preset condition is that the initial temperature is lower than an upper limit value of the first temperature setting range, and the eighth temperature corresponding to the first moment is lower than an upper limit value of the second temperature setting range; If the first preset condition is met, determining whether the predicted temperature corresponding to the second moment and the eighth temperature corresponding to the second moment meet a second preset condition, the second preset condition being that the predicted temperature is lower than the first safety temperature, and the eighth temperature corresponding to the second moment is lower than the second safety temperature, the first safety temperature is equal to the difference between the upper limit value of the first temperature setting range and the first value, and the second safety temperature is equal to the difference between the upper limit value of the second temperature setting range and the second value; If the second preset condition is not met, a third control signal is generated and sent to the micro control unit, so that the micro control unit gradually reduces the output voltage and the output current provided to the active heat dissipation component according to the third control signal.

8. The temperature control method according to claim 7, characterized in that: Also includes: If there is a target component among the monitored heating components, a fourth control signal is generated to the target component so that the target component is switched to a stop working state, and the target component is the heating component whose temperature value is lower than the corresponding maximum temperature.

9. The temperature control implementation method according to claim 7, characterized in that: The step of obtaining the instantaneous thermal power of the thermoelectric cooling plate at the first moment according to the ninth temperature at the first moment and the fifth temperature at the first moment comprises the following steps: Substituting the ninth temperature of the hot surface of the thermoelectric cooling plate at the first moment and the fifth temperature of the system-level chip at the first moment into the following formula (1) to calculate the instantaneous thermal power; （1） in, is the instantaneous thermal power, is the Seebeck coefficient of the thermoelectric cooling sheet, The output current provided by the microcontroller unit to the active heat dissipation component, is the equivalent resistance of the thermoelectric cooling sheet, is the temperature difference between the cold surface and the hot surface of the thermoelectric cooling plate, and the temperature difference is equal to the difference between the ninth temperature of the hot surface of the thermoelectric cooling plate at the first moment and the fifth temperature of the system-level chip at the first moment.

10. The temperature control implementation method according to claim 7, characterized in that: The step of calculating the predicted temperature of the mainboard area at the second moment according to the instantaneous thermal power, the mainboard instantaneous power, the heat capacity value, the second moment, the first moment, and the initial temperature corresponding to the first moment comprises the following steps: Substitute the instantaneous thermal power, the instantaneous power of the mainboard, the heat capacity, the second moment, the first moment and the initial temperature corresponding to the first moment into the following formula (2) to calculate the predicted temperature; （2） in, is the predicted temperature corresponding to the second moment, is the heat capacity value of the mainboard area at the first moment, For the first moment, For the second moment, is the instantaneous power of the motherboard in the motherboard area at the first moment, is the instantaneous thermal power of the thermoelectric cooling sheet at the first moment, is the initial temperature of the mainboard area at the first moment.

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