A stable optoelectronic IC chip structure and processing method thereof

Abstract

The present invention relates to the technical field of optoelectronic integrated chips, and in particular to a stable optoelectronic IC chip structure and a processing method thereof. The following technical scheme is adopted: comprising an optoelectronic IC wafer and a substrate circuit, wherein the optoelectronic IC wafer is electrically connected to the substrate circuit via a connecting metal wire, and a transparent insulating protective layer is provided at the connection between the connecting metal wire and the optoelectronic IC wafer and the substrate circuit; the substrate circuit is a PCB circuit board or a lead frame. The beneficial effect is that by providing a transparent insulating protective layer made of transparent glue at the connection between the optoelectronic IC wafer, the metal wire and the substrate circuit, it can ensure that the optical signal acts on the optoelectronic IC wafer while providing a good packaging protection effect on the connection between the optoelectronic IC wafer, the metal wire and the lead frame, and has good waterproof and anti-oxidation properties, thereby improving the stability of the performance of the optoelectronic IC chip, and the metal wire therein no longer needs to use gold wire that is not easily oxidized, which can effectively reduce costs.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic integrated chips, and in particular to a stable optoelectronic IC chip structure and a processing method thereof. Background Art

[0002] IC chip, i.e., integrated circuit chip, is a chip that is composed of a large number of microelectronic components and packaged into an integrated circuit, and its function is different according to the type of its integrated circuit. IC chips can be divided into semiconductor wafers with integrated circuits and lead frames for packaging semiconductor wafers. Among IC chips, optoelectronic IC chips are chips that contain photoelectric sensors on an integrated circuit of a semiconductor wafer. The photoelectric sensors on the IC chips can receive light signals and convert them into electrical signals for processing, and are generally used in electronic devices such as mice. In current optoelectronic IC chips, in order to allow light signals to enter the chip and act on the optoelectronic IC wafer, an opening needs to be provided at the bottom of the lead frame used for packaging the optoelectronic IC chip. At the same time, in order to prevent the connection between the optoelectronic IC wafer and the lead frame from being easily oxidized, the optoelectronic IC wafer and the lead frame are connected by gold wires, which not only causes the optoelectronic IC chip to have no waterproof function, but also the connection between the optoelectronic IC wafer, the gold wire and the lead frame is exposed to the air and there is also a certain risk of oxidation, which causes the performance of the optoelectronic IC chip to be unstable, and there is also a problem of high cost when using gold wires for connection. Summary of the invention

[0003] The purpose of the present invention is to provide a photoelectric IC chip structure, which has good waterproof and anti-oxidation properties, can effectively solve the problem of unstable performance of current photoelectric IC chips, and at the same time provide a corresponding processing method.

[0004] To achieve the above-mentioned purpose, the present invention adopts the following technical scheme: a stable optoelectronic IC chip structure, including an optoelectronic IC wafer and a substrate circuit, wherein the optoelectronic IC wafer is electrically connected to the substrate circuit through a connecting metal wire, and a transparent insulating protective layer is provided at the connection between the connecting metal wire and the optoelectronic IC wafer and the substrate circuit; the substrate circuit is a PCB circuit board or a lead frame.

[0005] When the base circuit is a lead frame, an opening for light to enter is arranged at the bottom of the lead frame, and the optoelectronic IC wafer is fixedly arranged in the lead frame and aligned with the opening.

[0006] Specifically, the transparent insulating protective layer extends outward from the connection between the metal wire and the optoelectronic IC wafer in the lead frame to seal the opening at the bottom of the lead frame.

[0007] Specifically, the transparent insulating protective layer is made of transparent glue.

[0008] Specifically, the connecting metal wire is a copper wire, an aluminum wire, or an alloy wire.

[0009] A processing method for the above-mentioned stable optoelectronic IC chip structure, firstly, the optoelectronic IC wafer is welded on the base circuit through the connecting metal wire, and then transparent glue is dripped on the connection between the connecting metal wire and the optoelectronic IC wafer and the base circuit. After the transparent glue solidifies, a transparent insulating protective layer is formed at the connection between the optoelectronic IC wafer, the connecting metal wire and the lead frame, thereby completing the processing of the stable optoelectronic IC chip structure.

[0010] Specifically, when the base circuit is a lead frame, when dripping the transparent glue, the transparent glue is injected into the opening through the opening at the bottom of the lead frame.

[0011] The beneficial effects of the present invention are as follows: by arranging a transparent insulating protective layer made of transparent glue at the connection between the optoelectronic IC wafer, the connecting metal wire and the substrate circuit, it is possible to ensure that the optical signal acts on the optoelectronic IC wafer while providing good packaging protection for the optoelectronic IC wafer, the connecting metal wire and the lead frame connection, and it has good waterproof and anti-oxidation properties, thereby improving the stability of the performance of the optoelectronic IC chip, and the metal wire therein no longer needs to use gold wire which is not easily oxidized, thereby effectively reducing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Attached Figure 1 A schematic diagram of a specific connection structure of a stable optoelectronic IC chip structure in Example 1; Attached Figure 2 This is a schematic diagram of a specific connection structure of a stable optoelectronic IC chip structure in Example 2. DETAILED DESCRIPTION

[0013] Example 1, reference Figure 1 A stable optoelectronic IC chip structure comprises an optoelectronic IC wafer 1 and a lead frame 2, wherein an opening 21 for light to enter is arranged at the bottom of the lead frame 2, the optoelectronic IC wafer 1 is fixedly arranged in the lead frame 2 and aligned with the opening 21, the optoelectronic IC wafer 1 is electrically connected to the lead frame 2 through a connecting metal wire 3, and a transparent insulating protective layer 4 is arranged at the connection between the optoelectronic IC wafer 1, the metal wire 3 and the lead frame 2; the transparent insulating protective layer 4 is made of transparent glue; and the transparent insulating protective layer 4 extends outward from the connection between the metal wire 3 and the optoelectronic IC wafer 1 in the lead frame 2 to seal the opening 21 at the bottom of the lead frame 2.

[0014] In this embodiment, the transparent insulating protective layer 4 is formed by transparent glue at the connection of the optoelectronic IC wafer 1, the metal wire 3 and the lead frame 2. On the one hand, it can provide protection for the connection of the optoelectronic IC wafer 1, the metal wire 3 and the lead frame 2 on the basis of ensuring that the optical signal acts on the optoelectronic IC wafer 1, and play a role in waterproofing and anti-oxidation. On the other hand, since the metal wire 3 is already protected by the transparent insulating protective layer 4, it is no longer necessary to consider its metal stability, and only ordinary metal wires, such as copper wires or aluminum wires or other alloy metal wires, can be used, which can effectively reduce production costs. The processing method of the optoelectronic IC chip of this embodiment is as follows: first, the optoelectronic IC wafer 1 is welded in the lead frame 2 through the metal wire 3. After the welding is completed, the transparent glue is injected into the opening 21 at the bottom of the lead frame 2. After the transparent glue solidifies, a transparent insulating protective layer 4 is formed at the connection of the optoelectronic IC wafer 1, the metal wire 3 and the lead frame 2, thereby improving the overall protection performance of the optoelectronic IC chip.

[0015] Example 2, reference Figure 2 The difference between this embodiment and embodiment 1 is that the base circuit adopts a PCB circuit board 5.

[0016] Of course, the above are only preferred embodiments of the present invention, and are not intended to limit the scope of use of the present invention. Therefore, any equivalent changes made to the principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A stable optoelectronic IC chip structure, characterized in that: It includes a photoelectric IC wafer and a base circuit. The photoelectric IC wafer is electrically connected to the base circuit through a connecting metal wire. A transparent insulating protective layer is provided at the connection between the connecting metal wire, the photoelectric IC wafer and the base circuit. The base circuit is a PCB circuit board or a lead frame.

2. A stable optoelectronic IC chip structure according to claim 1, characterized in that: When the base circuit is a lead frame, an opening for light to enter is arranged at the bottom of the lead frame, and the optoelectronic IC wafer is fixedly arranged in the lead frame and aligned with the opening.

3. A stable optoelectronic IC chip structure according to claim 2, characterized in that: The transparent insulating protective layer extends outward from the connection between the metal wire and the optoelectronic IC wafer in the lead frame to seal the opening at the bottom of the lead frame.

4. A stable optoelectronic IC chip structure according to claim 1, characterized in that: The transparent insulating protective layer is made of transparent glue.

5. A stable optoelectronic IC chip structure according to claim 1, characterized in that: The connecting metal wire is made of copper wire, aluminum wire or alloy wire.

6. A method for processing a stable optoelectronic IC chip structure as claimed in any one of claims 1 to 5, characterized in that: First, the optoelectronic IC chip is welded to the base circuit through the connecting metal wire, and then transparent glue is dripped on the connection between the connecting metal wire, the optoelectronic IC chip and the base circuit. After the transparent glue solidifies, a transparent insulating protective layer is formed at the connection between the optoelectronic IC chip, the connecting metal wire and the lead frame, thereby completing the processing of stabilizing the optoelectronic IC chip structure.

7. A method for processing a stable optoelectronic IC chip structure according to claim 6, characterized in that: When the base circuit is a lead frame, when dripping the transparent glue, the transparent glue is injected into the opening through the opening at the bottom of the lead frame.

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