Light emitting device and display apparatus

Abstract

The invention discloses a light-emitting device and a display device, the light-emitting device comprises a substrate, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a current blocking layer and a first blocking part, and the first semiconductor layer is arranged on one side of the substrate; the light-emitting layer is arranged on the side, away from the substrate, of the first semiconductor layer and comprises a main body part and an edge part arranged around the main body part; the second semiconductor layer is arranged on one side of the light-emitting layer away from the first semiconductor layer; the current blocking layer is arranged on the side, away from the light-emitting layer, of the second semiconductor layer; the first blocking part is located on the side, away from the first semiconductor layer, of the light-emitting layer, the resistance of the first blocking part is larger than that of the current blocking layer, and the orthographic projection of the first blocking part on the substrate and the orthographic projection of the edge part on the substrate are overlapped; the orthographic projection of the first blocking part on the substrate is located on at least one side of the orthographic projection of the current blocking layer on the substrate. The side light leakage of the light-emitting device can be reduced, and the amount of light emitted by the light-emitting device in the forward direction can be improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting device and a display apparatus. Background Art

[0002] Micro Light Emitting Diode (Micro LED) has begun to attract widespread attention as a new generation of display technology. According to the definition, display units with a pixel pitch of less than 100 microns are classified as micro LEDs. The continuous advancement of manufacturing technology has led to a continuous reduction in the pixel size and pitch of micro LEDs, which have now reached a scale smaller than 100 microns.

[0003] As the size of the micro LED decreases, the proportion of the side wall area of ​​the micro LED in its overall surface area increases, and most of the light tends to leak out from the side of the micro LED, resulting in a decrease in the amount of forward emitted light.

[0004] Therefore, it is necessary to propose a new technical solution to solve the above technical problems. Summary of the invention

[0005] The purpose of the present application is to provide a light-emitting device and a display device, which can reduce the side light leakage of the light-emitting device and increase the amount of light emitted in the forward direction of the light-emitting device.

[0006] To solve the above problems, the technical solution of this application is as follows:

[0007] In a first aspect, the present application provides a light emitting device, comprising:

[0008] substrate;

[0009] A first semiconductor layer, disposed on one side of the substrate;

[0010] A light emitting layer is provided on a side of the first semiconductor layer away from the substrate, the light emitting layer comprising a main body and an edge portion arranged around the main body;

[0011] A second semiconductor layer is disposed on a side of the light emitting layer away from the first semiconductor layer; and

[0012] A current blocking layer, disposed on a side of the second semiconductor layer away from the light emitting layer;

[0013] a first blocking portion, located at a side of the light-emitting layer away from the first semiconductor layer, the resistance of the first blocking portion being greater than the resistance of the current blocking layer, and the orthographic projection of the first blocking portion on the substrate overlapping with the orthographic projection of the edge portion on the substrate;

[0014] An orthographic projection of the first blocking portion on the substrate is located on at least one side of an orthographic projection of the current blocking layer on the substrate.

[0015] In one embodiment of the present application, the first blocking portion includes a first sub-portion and a second sub-portion, the orthographic projection of the first sub-portion on the substrate and the orthographic projection of the second sub-portion on the substrate are respectively located at the periphery of the orthographic projection of the current blocking layer on the substrate, the orthographic projection of the first sub-portion on the substrate overlaps with the orthographic projection of the edge portion on the substrate, and the orthographic projection of the second sub-portion on the substrate overlaps with the orthographic projection of the edge portion on the substrate.

[0016] In an embodiment of the present application, the orthographic projection of the first blocking portion on the substrate is arranged around the periphery of the orthographic projection of the current blocking layer on the substrate.

[0017] In one embodiment of the present application, the first blocking portion is disposed on a side of the second semiconductor layer away from the light emitting layer, and is disposed on the same layer as the current blocking layer.

[0018] In an embodiment of the present application, the thickness of the first blocking portion is greater than the thickness of the current blocking layer.

[0019] In an embodiment of the present application, the first blocking portion includes at least two first sub-layers, and the at least two first sub-layers are stacked along the thickness direction of the light-emitting device, and the material of the first sub-layers is an insulating material.

[0020] In one embodiment of the present application, the first blocking portion is disposed on a side of the light emitting layer away from the first semiconductor layer, and is disposed on the same layer as the second semiconductor layer.

[0021] In one embodiment of the present application, a portion of the second semiconductor layer corresponding to the edge portion is provided with an opening, a portion of the first blocking portion is filled in the opening, and another portion of the first blocking portion is provided in the current blocking layer.

[0022] In one embodiment of the present application, the light emitting device further includes:

[0023] A first electrode connected to a side of the first semiconductor layer away from the substrate; and

[0024] A second blocking portion is disposed on the same layer as the first semiconductor layer;

[0025] The orthographic projection of the second blocking portion on the substrate is located at least on one side of the orthographic projection of the first semiconductor layer on the substrate, and the orthographic projection of the second blocking portion on the substrate overlaps with the orthographic projection of the edge portion on the substrate.

[0026] In one embodiment of the present application, the first blocking portion is disposed on a side of the second semiconductor layer away from the light emitting layer;

[0027] The light emitting device further comprises:

[0028] A first transparent conductive layer is provided on a side of the second semiconductor layer away from the light emitting layer and covers the first blocking portion, and the current blocking layer is provided on a side of the first transparent conductive layer away from the first semiconductor layer;

[0029] a second transparent conductive layer, disposed on a side of the first transparent conductive layer away from the first semiconductor layer and covering the current blocking layer;

[0030] The second electrode is connected to a side of the second transparent conductive layer away from the first transparent conductive layer.

[0031] In one embodiment of the present application, the light emitting device further comprises a light extraction structure, and the light extraction structure is disposed on a side of the substrate away from the first semiconductor layer;

[0032] The orthographic projection of the light extraction structure on the substrate overlaps with the orthographic projection of the main body on the substrate, and the orthographic projection of the first blocking portion on the substrate is located on at least one side of the orthographic projection of the light extraction structure on the substrate.

[0033] In a second aspect, the present application proposes a display device, comprising a light-emitting device, wherein the light-emitting device comprises a substrate, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a current blocking layer, and a first blocking portion. The first semiconductor layer is arranged on one side of the substrate; the light-emitting layer is arranged on the side of the first semiconductor layer away from the substrate, and the light-emitting layer comprises a main body and an edge portion arranged around the main body; the second semiconductor layer is arranged on the side of the light-emitting layer away from the first semiconductor layer; the current blocking layer is arranged on the side of the second semiconductor layer away from the light-emitting layer; the first blocking portion is located on the side of the light-emitting layer away from the first semiconductor layer, the resistance of the first blocking portion is greater than the resistance of the current blocking layer, the orthographic projection of the first blocking portion on the substrate overlaps with the orthographic projection of the edge portion on the substrate; the orthographic projection of the first blocking portion on the substrate is located on at least one side of the orthographic projection of the current blocking layer on the substrate.

[0034] In the present application, the first semiconductor layer transmits one type of carriers, electrons and holes, and the second semiconductor layer transmits another type of carriers, electrons and holes, and the two types of carriers, electrons and holes, are recombined in the light-emitting layer, and the recombined energy is emitted in the form of photons and generates light. In the present application, a first blocking portion is provided, and the orthographic projection of the first blocking portion on the substrate overlaps with the orthographic projection of the edge of the light-emitting layer on the substrate. During the transmission of carriers, the first blocking portion can hinder the lateral transmission of carriers to the side walls of the light-emitting device, thereby hindering the recombination of holes and electrons at the edge, reducing the amount of recombination of holes and electrons at the edge, thereby reducing the side light leakage of the light-emitting device. The current blocking layer is provided on the side of the second semiconductor layer away from the light-emitting layer, and is used to improve the current density distribution in the light-emitting device and alleviate the crowding phenomenon of current in the main body. The resistance of the first blocking part is greater than the resistance of the current blocking layer, so that the carriers tend to flow toward the main part during the longitudinal transmission process, increasing the number of carriers in the main part. At this time, the number of carriers transmitted to the main part is greater than the number of carriers in the edge part, and the light emission of the light-emitting layer is concentrated in the main part, which can converge the light emission angle and increase the amount of light emitted in the forward direction of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a schematic diagram of an embodiment of a light emitting device of the present application.

[0036] Figure 2 This is a first plan view of the light emitting device of the present application;

[0037] Figure 3 is a second plan view of the light emitting device of the present application;

[0038] Figure 4 is a third plan view of the light emitting device of the present application;

[0039] Figure 5 is a fourth plan view of the light emitting device of the present application;

[0040] Figure 6 is a fifth plan view of the light emitting device of the present application;

[0041] Figure 7 is a schematic diagram of a first embodiment of a light emitting device of the present application;

[0042] Figure 8 is a schematic diagram of a second embodiment of a light emitting device of the present application;

[0043] Fig. 9 is a schematic diagram of a third embodiment of a light emitting device of the present application;

[0044] Fig.10 is a schematic diagram of a fourth embodiment of the light emitting device of the present application. DETAILED DESCRIPTION

[0045] The meanings of the terms used in this specification and claims correspond to the meanings commonly understood by those of ordinary skill in the art to which this application belongs. The terms used in this specification and claims are only for the purpose of facilitating the description and understanding of this application, and are not intended to limit this application to the narrow interpretation of the specific terms used in the specification and claims.

[0046] The present application proposes a display device, which may be a mobile phone, a tablet computer, an e-reader, an electronic display screen, a laptop computer, an augmented reality (AR) or virtual reality (VR) device, a media player, a wearable device, a digital camera, a car navigation system, etc. The display device includes one of a display panel and a backlight module.

[0047] Optionally, the display device includes a backlight module. The display device also includes a liquid crystal panel, and the backlight module is used to provide a light source for the liquid crystal panel. The liquid crystal panel includes an array substrate, an opposing substrate, and a liquid crystal layer located between the array substrate and the opposing substrate. The liquid crystal panel realizes picture display by controlling the light transmittance of each pixel in the liquid crystal layer. Among them, the backlight module includes a light-emitting device 100. On the premise that the amount of light emitted from the front of the light-emitting device 100 is increased, the amount of light emitted from the front of the liquid crystal panel can be increased, thereby improving the display effect; on the premise that the side light leakage of the light-emitting device 100 is reduced, the power consumption of the backlight module can be reduced, thereby reducing the power consumption of the display device, and the service life of the light-emitting device 100 can also be extended.

[0048] Optionally, the display device includes a display panel, and the display panel may be a micro light emitting diode (Micro Light Emitting Diode, Micro LED) display panel, or a sub-millimeter light emitting diode (Mini Light Emitting Diode, Mini LED) display panel.

[0049] Optionally, the display panel is a micro light emitting diode display panel. Compared with a liquid crystal display panel, a micro light emitting diode display panel is a direct display panel. A backlight module and a liquid crystal layer are not provided in the micro light emitting diode display panel, but the light emitting device 100 is used as a sub-pixel to directly emit light, which has a higher contrast ratio than a liquid crystal display panel. Among them, the micro light emitting diode display panel includes a display module, and the display module includes a light emitting device 100. On the premise that the amount of light emitted from the front of the light emitting device 100 is increased, the front light emitting efficiency of the micro light emitting diode display panel can be improved, thereby improving the display effect; on the premise that the side light leakage of the light emitting device 100 is reduced, on the one hand, the side light leakage entering other film layers can be reduced to cause heat accumulation, thereby improving the heat dissipation efficiency of the display panel; on the other hand, the side light leakage is reduced, which can reduce the power consumption of the light emitting device 100, extend the service life of the light emitting device 100, reduce the large viewing angle of the light emitting device 100, converge the light emitting angle, and improve the display effect.

[0050] The embodiments of the present application are described by taking a micro light emitting diode display panel as an example.

[0051] The present application proposes a light emitting device 100. The light emitting device 100 may be a micro light emitting diode, or a sub-millimeter light emitting diode. The embodiments of the present application are described by taking a micro light emitting diode as an example. The light emitting device 100 may be a red light emitting device 100, a blue light emitting device 100, a green light emitting device 100, or a white light emitting device 100. The embodiments of the present application do not limit the light color of the light emitting device 100.

[0052] See also Figure 1 The light emitting device 100 of the present application includes a substrate 10, a first semiconductor layer 20, a light emitting layer 30, a second semiconductor layer 40, a current blocking layer 50 and a first blocking portion 60. The first semiconductor layer 20 is disposed on one side of the substrate 10. The light emitting layer 30 is disposed on a side of the first semiconductor layer 20 away from the substrate 10, and the light emitting layer 30 includes a main body 31 and an edge portion 32 disposed around the main body 31. The second semiconductor layer 40 is disposed on a side of the light emitting layer 30 away from the first semiconductor layer 20. The current blocking layer 50 is disposed on a side of the second semiconductor layer 40 away from the light emitting layer 30. The first blocking portion 60 is located on a side of the light emitting layer 30 away from the first semiconductor layer 20, the resistance of the first blocking portion 60 is greater than the resistance of the current blocking layer 50, and the orthographic projection of the first blocking portion 60 on the substrate 10 overlaps with the orthographic projection of the edge portion 32 on the substrate 10.

[0053] See also Figure 2 In a plan view of the light emitting device 100 , an orthographic projection of the first blocking portion 60 on the substrate 10 is located on at least one side of an orthographic projection of the current blocking layer 50 on the substrate 10 .

[0054] In the present application, the first semiconductor layer 20 transmits one type of carriers of electrons and holes, and the second semiconductor layer 40 transmits another type of carriers of electrons and holes. The two types of carriers of electrons and holes are recombined in the light-emitting layer 30, and the recombined energy is emitted in the form of photons and generates light. In the present application, a first blocking portion 60 is provided, and the first blocking portion 60 overlaps with the orthographic projection of the edge portion 32 of the light-emitting layer 30 on the substrate 10 in the orthographic projection on the substrate 10. During the transmission of carriers, the first blocking portion 60 can prevent the carriers from being transmitted to the side wall of the light-emitting device 100 along the lateral direction X, thereby preventing the two types of carriers of holes and electrons from recombining at the edge portion 32, reducing the amount of the two types of carriers of holes and electrons at the edge portion 32, thereby reducing the side light leakage of the light-emitting device 100. The current blocking layer 50 is provided on the side of the second semiconductor layer 40 away from the light-emitting layer 30, and is used to improve the current density distribution in the light-emitting device 100 and reduce the crowding phenomenon of the current in the main portion 31. The resistance of the first blocking portion 60 is greater than the resistance of the current blocking layer 50, so that the carriers tend to flow toward the main portion 31 during transmission along the longitudinal direction Z, thereby increasing the number of carriers in the main portion 31. At this time, the number of carriers transmitted to the main portion 31 is greater than the number of carriers in the edge portion 32, and the light emission of the light-emitting layer 30 is concentrated in the main portion 31, which can converge the light emission angle and increase the amount of light emitted in the forward direction of the light-emitting device 100.

[0055] The main body 31 and the edge 32 of the light emitting layer 30 are an integrated structure, and the main body 31 and the edge 32 are integrally formed.

[0056] Optionally, the substrate 10 is a hard substrate 10, and the material of the substrate 10 includes glass.

[0057] Optionally, the substrate 10 is a flexible substrate 10 , and the material of the substrate 10 includes polyimide.

[0058] Optionally, the material of the first semiconductor layer 20 is one of N-type gallium nitride (GaN) and P-type gallium nitride, and the material of the second semiconductor layer 40 is the other of N-type gallium nitride and P-type gallium nitride. The subsequent embodiments of the present application are described by taking the material of the first semiconductor layer 20 as N-type gallium nitride and the material of the second semiconductor layer 40 as P-type gallium nitride as an example. In the subsequent embodiments, the first semiconductor layer 20 is used to transport electrons, and the second semiconductor layer 40 is used to transport holes.

[0059] Optionally, the material of the current blocking layer 50 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, and aluminum oxide.

[0060] Optionally, the material of the first barrier 60 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, and aluminum oxide.

[0061] Optionally, the thickness of the first semiconductor layer 20 is in the range of 100 nanometers to 5 micrometers.

[0062] Optionally, the light emitting layer 30 is a multi-quantum well layer. The thickness of the light emitting layer 30 is in the range of 100 nanometers to 400 nanometers.

[0063] Optionally, the thickness of the second semiconductor layer 40 is in the range of 100 μm to 1 μm. The thickness of the second semiconductor layer 40 is less than or equal to the thickness of the first semiconductor layer 20 .

[0064] Optionally, the thickness of the current blocking layer 50 is in the range of 100 nanometers to 1 micrometer.

[0065] Optionally, the thickness of the first blocking portion 60 is in the range of 500 nanometers to 2 micrometers. The thickness of the first blocking portion 60 is greater than the thickness of the current blocking layer 50 .

[0066] Optionally, the light emitting device 100 further includes a first electrode 91, a second electrode 92 and a first transparent conductive layer 81. The first electrode 91 is connected to a side of the first semiconductor layer 20 away from the substrate 10 and is spaced apart from the light emitting layer 30. The first electrode 91 is an N-pole metal and generates electrons.

[0067] Optionally, the first transparent conductive layer 81 is disposed on a side of the second semiconductor layer 40 away from the light emitting layer 30. The second electrode 92 is electrically connected to the first transparent conductive layer 81, the second electrode 92 generates holes, and the first transparent conductive layer 81 serves as a current spreading layer, electrically connecting the first electrode 91 and the second semiconductor layer 40. The material of the first transparent conductive layer 81 includes transparent indium tin oxide (ITO, Indium Tin Oxide).

[0068] Optionally, the thickness of the first transparent conductive layer 81 is in the range of 500 nanometers to 2 micrometers.

[0069] In the present application, the resistance of the first blocking part 60 and the current blocking layer 50 can be adjusted by adjusting the thickness of the first blocking part 60 and the current blocking layer 50, or selecting different materials for the first blocking part 60 and the current blocking layer 50, so that the resistance of the first blocking part 60 is greater than the resistance of the current blocking layer 50.

[0070] Optionally, the thickness of the first barrier 60 is greater than the thickness of the current blocking layer 50. In the present embodiment, when the materials of the first barrier 60 and the second barrier 70 are the same, the resistivity of the first barrier 60 is the same as the resistivity of the second barrier 70. Since the thickness of the first barrier 60 is greater than the thickness of the current blocking layer 50, the resistance of the first barrier 60 is greater than the resistance of the second barrier 70. At this time, the ability of the first barrier 60 to hinder hole transmission is greater than the ability of the current blocking layer 50 to hinder hole transmission. Since the first barrier 60 overlaps with the edge portion 32, the holes generated by the second electrode 92 tend to move from the portion of the second semiconductor layer 40 corresponding to the main body 31 to the main body 31 along the longitudinal direction Z, and hinder the holes generated by the second electrode 92 from moving from the portion of the second semiconductor layer 40 corresponding to the edge portion 32 to the edge portion 32 along the longitudinal direction Z, reducing the side light leakage of the light-emitting device 100, and can converge the light-emitting angle, so that the light emission of the light-emitting layer 30 is concentrated in the main body 31, and the amount of light emitted in the forward direction of the light-emitting device 100 is increased.

[0071] Optionally, the first blocking portion 60 includes at least two first sublayers, and the at least two first sublayers are stacked along the thickness direction of the light-emitting device 100. The material of the first sublayer is an insulating material. In the present embodiment, the current blocking layer 50 is a single-layer film layer, and the first blocking portion 60 is a multilayer film layer including at least two first sublayers. When the material and thickness of the current blocking layer 50 are consistent with those of the first blocking portion 60, the resistance of the first blocking portion 60 formed by the plurality of first sublayers is greater than that of the current blocking layer 50. Because there is a contact interface between two adjacent first sublayers, and the contact interface has a contact resistance, the formation of the contact resistance increases the overall resistance of the first blocking portion 60, thereby making the resistance of the first blocking portion 60 greater than the resistance of the current blocking layer 50. At this time, the ability of the first blocking portion 60 to block hole transmission is greater than the ability of the current blocking layer 50 to block hole transmission. Since the first blocking portion 60 overlaps with the edge portion 32, the holes generated by the second electrode 92 tend to move from the portion of the second semiconductor layer 40 corresponding to the main portion 31 to the main portion 31 along the longitudinal direction Z, and the holes generated by the second electrode 92 are blocked from moving from the portion of the second semiconductor layer 40 corresponding to the edge portion 32 to the edge portion 32 along the longitudinal direction Z, thereby reducing the side light leakage of the light-emitting device 100, converging the light-emitting angle, concentrating the light emission of the light-emitting layer 30 on the main portion 31, and increasing the amount of light emitted in the forward direction of the light-emitting device 100.

[0072] Optionally, the light emitting device 100 further includes a light extraction structure 93. The light extraction structure 93 is disposed on a side of the substrate 10 away from the first semiconductor layer 20. The orthographic projection of the light extraction structure 93 on the substrate 10 overlaps with the orthographic projection of the main body 31 on the substrate 10. In a plan view of the light emitting device 100, the orthographic projection of the first blocking portion 60 on the substrate 10 is located on at least one side of the orthographic projection of the light extraction structure 93 on the substrate 10.

[0073] The light extraction structure 93 can converge the angle of light emitted from the main body 31, reduce the light output at a large viewing angle, and improve the light extraction efficiency, thereby improving the front light output efficiency and improving the display effect.

[0074] Optionally, the light extraction structure 93 includes at least one microlens. The shape of the microlens can be one of a main body, a cone, a table, and a hemisphere. When the wide-angle light emitted from the main body 31 passes through the microlens, the luminous angle will be reduced, achieving the effect of converging the luminous angle. Among them, when the shape of the microlens is a hemisphere, the convergence effect of the light is better.

[0075] Optionally, the light emitting device 100 further includes a second blocking portion 70 . The second blocking portion 70 is disposed in the same layer as the first semiconductor layer 20 .

[0076] See also Figure 1 , after the electrons generated by the first electrode 91 flow into the first semiconductor layer 20, they will move in the first semiconductor layer 20 along the horizontal direction X. After a part of the electrons move along the horizontal direction X to the first semiconductor layer 20 above the corresponding main body 31, they will move along the longitudinal direction Z to the main body 31 to recombine and emit light. Another part of the electrons will have a tendency to continue to move in the direction of the first semiconductor layer 20 above the corresponding edge portion 32. However, due to the setting of the second blocking portion 70, the second blocking portion 70 will prevent the part of the electrons from continuing to move along the horizontal direction X along the light-emitting layer 30, so that more electrons move from the first semiconductor layer 20 above the corresponding main body 31 along the longitudinal direction Z to the main body 31 to emit light, thereby increasing the number of electrons in the main body 31, so that the number of recombined photons in the main body 31 increases, thereby increasing the amount of light emitted in the forward direction of the light-emitting device 100, and reducing the number of electrons in the edge portion 32, thereby reducing the side light leakage of the light-emitting device 100.

[0077] Optionally, the material of the second blocking portion 70 includes at least one of silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, and aluminum oxide.

[0078] Optional, see Figure 2 In the plan view of the light emitting device 100 , the orthographic projection of the first blocking portion 60 on the substrate 10 is located on one side of the orthographic projection of the current blocking layer 50 on the substrate 10 , and the first blocking portion 60 only overlaps with the edge portion 32 on one side of the main body portion 31 .

[0079] In this embodiment, after the holes generated by the second electrode 92 flow into the first transparent conductive layer 81, they move in the first transparent conductive layer 81. Since the first blocking portion 60 overlaps with the edge portion 32 on one side of the main body portion 31, the first blocking portion 60 prevents the holes in the first transparent conductive layer 81 from moving along the longitudinal direction Z to the edge portion 32 overlapping with the first blocking portion 60, which can reduce the light emission of the side wall on one side of the light-emitting device 100, and make the holes that originally compounded and emitted light on the side wall concentrate to the main body portion 31, increase the number of compounded holes in the main body portion 31, make the light emission of the light-emitting layer 30 concentrate on the main body portion 31, converge the light emission angle, and increase the amount of light emitted in the forward direction of the light-emitting device 100.

[0080] Optional, see Figure 3 The first blocking portion 60 includes a first sub-portion 61 and a second sub-portion 62. The orthographic projection of the first sub-portion 61 on the substrate 10 and the orthographic projection of the second sub-portion 62 on the substrate 10 are respectively located at the periphery of the orthographic projection of the current blocking layer 50 on the substrate 10, the orthographic projection of the first sub-portion 61 on the substrate 10 overlaps with the orthographic projection of the edge portion 32 on the substrate 10, and the orthographic projection of the second sub-portion 62 on the substrate 10 overlaps with the orthographic projection of the edge portion 32 on the substrate 10.

[0081] In this embodiment, after the holes generated by the second electrode 92 flow into the first transparent conductive layer 81, they move inside the first transparent conductive layer 81. Since the first sub-portion 61 and the second sub-portion 62 overlap with the edge portions 32 on both sides of the main body portion 31, the first sub-portion 61 plays a role in preventing the holes of the first transparent conductive layer 81 from moving along the longitudinal direction Z to the edge portion 32 on one side overlapping with the first sub-portion 61, and the second sub-portion 62 plays a role in preventing the holes of the first transparent conductive layer 81 from moving along the longitudinal direction Z to the edge portion 32 on the other side overlapping with the second sub-portion 62. The first sub-portion 61 and the second sub-portion 62 can reduce the light emission from the two side walls of the light-emitting device 100, and make the holes that originally compounded and emitted light on the two side walls concentrate toward the main body 31, thereby increasing the number of compounded holes in the main body 31. Compared with the embodiment in which the first blocking portion 60 is arranged on one side of the current blocking layer 50, the embodiment in which the first sub-portion 61 and the second sub-portion 62 are arranged on both sides of the current blocking layer 50 can make the light emission of the light-emitting layer 30 further concentrated in the main body 31, thereby achieving the effect of further converging the light emission angle, and further increasing the amount of light emitted in the forward direction of the light-emitting device 100.

[0082] Optional, see Figure 4 The orthographic projection of the first blocking portion 60 on the substrate 10 is arranged around the periphery of the orthographic projection of the current blocking layer 50 on the substrate 10 .

[0083] In this embodiment, after the holes generated by the second electrode 92 flow into the first transparent conductive layer 81, they will move inside the first transparent conductive layer 81. Since the first blocking portion 60 overlaps with the edge portion 32 of the outer periphery of the main body 31, the first blocking portion 60 plays a role in preventing the holes of the first transparent conductive layer 81 from moving along the longitudinal direction Z to the edge portion 32 overlapping with the first blocking portion 60. The first blocking portion 60 can reduce the light emission of all side walls of the light-emitting device 100, and make the holes that originally composite light emission on all side walls concentrate to the main body 31, thereby increasing the number of composite holes in the main body 31. Compared with the embodiment in which the first sub-portion 61 and the second sub-portion 62 are arranged on both sides of the current blocking layer 50, the embodiment in which the first blocking portion 60 is arranged around the outer periphery of the current blocking layer 50 can make the light emission of the light-emitting layer 30 further concentrated in the main body 31, thereby achieving the effect of further converging the light emission angle, and further increasing the amount of light emitted in the forward direction of the light-emitting device 100.

[0084] Optional, see Figure 5 , the orthographic projection of the second barrier 70 on the substrate 10 overlaps with the orthographic projection of the edge portion 32 on the substrate 10. In a plan view of the light emitting device 100, the orthographic projection of the second barrier 70 on the substrate 10 is located on at least one side of the orthographic projection of the first semiconductor layer 20 on the substrate 10.

[0085] In this embodiment, after the electrons generated by the first electrode 91 flow into the first semiconductor layer 20, they will move in the horizontal direction X in the first semiconductor layer 20. After a part of the electrons move in the horizontal direction X to the first semiconductor layer 20 above the corresponding main body 31, they will move in the longitudinal direction Z to the main body 31 to recombine and emit light. Another part of the electrons will have a tendency to continue to move in the direction of the first semiconductor layer 20 above the corresponding edge portion 32. However, due to the provision of the second blocking portion 70, the second blocking portion 70 will prevent the part of the electrons from continuing to move in the horizontal direction X along the light-emitting layer 30, so that more electrons move from the first semiconductor layer 20 above the corresponding main body 31 along the longitudinal direction Z to the main body 31 to emit light, thereby increasing the number of electrons in the main body 31, so that the number of recombined photons in the main body 31 increases, thereby increasing the amount of light emitted in the forward direction of the light-emitting device 100, and reducing the number of electrons in the edge portion 32, thereby reducing the side light leakage of the light-emitting device 100.

[0086] Optional, see Figure 6 In the plan view of the light emitting device 100, the orthographic projection of the second blocking portion 70 on the substrate 10 overlaps with the orthographic projection of the edge portions 32 on three sides of the main body 31 on the substrate 10, and the second blocking portion 70 and the first electrode 91 are arranged around the periphery of the main body 31. Figure 5This embodiment can further increase the number of electrons in the main body 31, so that the number of recombined photons in the main body 31 is further increased, thereby further increasing the amount of light emitted in the forward direction of the light-emitting device 100, and further reducing the number of electrons in the edge portion 32, thereby further reducing the side light leakage of the light-emitting device 100.

[0087] Optionally, in a plan view of the light-emitting device 100, the orthographic projection of the current blocking layer 50 on the substrate 10 overlaps with the orthographic projection of the second electrode 92 on the substrate 10. The current blocking layer 50 blocks the electrons generated by the first electrode 91 from crossing the second semiconductor layer 40 to reach the second electrode 92, weakens or prevents the current crowding effect, guides the current to a region away from the second electrode 92, and improves the internal quantum efficiency and light extraction efficiency.

[0088] Due to the design of the first blocking portion 60, in the plan view of the display panel, the holes generated by the second electrode 92 are concentrated in the portion of the main body 31 located outside the current blocking layer 50, which can reduce the side wall light emission of the light-emitting device 100 and increase the amount of forward emitted light while reducing current crowding.

[0089] In the first embodiment of the present application:

[0090] Optional, see Figure 7 The first blocking portion 60 is disposed on a side of the second semiconductor layer 40 away from the light emitting layer 30 and is disposed in the same layer as the current blocking layer 50. The first transparent conductive layer 81 is disposed on a side of the second semiconductor layer 40 away from the light emitting layer 30 and covers the first blocking portion 60 and the current blocking layer 50, and a portion of the first transparent conductive layer 81 is in direct contact with the second semiconductor layer 40.

[0091] In this embodiment, the resistance of the first blocking portion 60 is greater than the resistance of the second blocking portion 70. At this time, the ability of the first blocking portion 60 to block hole transmission is greater than the ability of the current blocking layer 50 to block hole transmission. Since the first blocking portion 60 overlaps with the edge portion 32, the holes generated by the second electrode 92 tend to flow into the portion of the second semiconductor layer 40 corresponding to the main body 31 when moving in the first transparent conductive layer 81, and move to the main body 31 along the longitudinal direction Z, which prevents the holes generated by the second electrode 92 from moving from the portion of the second semiconductor layer 40 corresponding to the edge portion 32 to the edge portion 32 along the longitudinal direction Z, thereby reducing the side light leakage of the light-emitting device 100, converging the light-emitting angle, concentrating the light emission of the light-emitting layer 30 on the main body 31, and increasing the amount of light emitted in the forward direction of the light-emitting device 100.

[0092] In the second embodiment of the present application:

[0093] In order to avoid redundancy, the second embodiment of the present application will describe parts different from the first embodiment of the present application.

[0094] The second embodiment of the present application is different from the first embodiment of the present application in that:

[0095] Optional, see Figure 8 The first blocking portion 60 is disposed on a side of the light emitting layer 30 away from the first semiconductor layer 20 , and is disposed on the same layer as the second semiconductor layer 40 .

[0096] In the second embodiment, the first barrier 60 is disposed in the same layer as the second semiconductor layer 40. Compared with the first embodiment, the first barrier 60 of the second embodiment can prevent holes from moving in the second semiconductor layer 40 along the horizontal direction X, and prevent holes from entering the second semiconductor layer 40, moving along the horizontal direction X to the portion of the second semiconductor layer 40 corresponding to the edge portion 32, and then moving along the vertical direction Z to the edge portion 32 for composite emission. Compared with the first embodiment, the second embodiment can further weaken the sidewall emission.

[0097] In the third embodiment of the present application:

[0098] In order to avoid redundancy, the third embodiment of the present application will describe parts different from the first embodiment of the present application.

[0099] The third embodiment of the present application is different from the first embodiment of the present application in that:

[0100] Optional, see Fig. 9 A portion of the second semiconductor layer 40 corresponding to the edge portion 32 is provided with an opening, a portion of the first blocking portion 60 is filled in the opening, and another portion of the first blocking portion 60 is provided in the current blocking layer 50 .

[0101] Compared with the first embodiment, the setting of the first blocking portion 60 of the third embodiment can prevent holes from moving in the second semiconductor layer 40 and the first transparent conductive layer 81 along the horizontal direction X, and prevent holes from entering the first transparent conductive layer 81 and the second semiconductor layer 40, and then moving along the horizontal direction X to the portion of the first transparent conductive layer 81 and the second semiconductor layer 40 corresponding to the edge portion 32, and then moving along the longitudinal direction Z to the edge portion 32 for composite emission. Compared with the first embodiment, the third embodiment can further weaken the side wall emission.

[0102] In the fourth embodiment of the present application:

[0103] In order to avoid redundancy, the fourth embodiment of the present application will describe the parts different from the first embodiment of the present application.

[0104] The fourth embodiment of the present application is different from the first embodiment of the present application in that:

[0105] Optional, see Fig.10The first transparent conductive layer 81 is disposed on a side of the second semiconductor layer 40 away from the light emitting layer 30 and covers the first blocking portion 60. The current blocking layer 50 is disposed on a side of the first transparent conductive layer 81 away from the first semiconductor layer 20. The light emitting device 100 further includes a second transparent conductive layer 82, which is disposed on a side of the first transparent conductive layer 81 away from the first semiconductor layer 20 and covers the current blocking layer 50. The second electrode 92 is connected to a side of the second transparent conductive layer 82 away from the first transparent conductive layer 81.

[0106] The fourth embodiment of the present application also includes a second transparent conductive layer 82, and the material of the second transparent conductive layer 82 includes transparent indium tin oxide. The second transparent conductive layer 82 also plays the role of expanding the current. The holes generated by the second electrode 92 flow through the second transparent conductive layer 82, the first transparent conductive layer 81 and the second semiconductor layer 40 in sequence, and then flow into the light-emitting layer 30 to recombine with the electrons to emit light. Compared with the first embodiment, the fourth embodiment of the present application sets the current blocking layer 50 on the side of the second transparent conductive layer 82 away from the first transparent conductive layer 81 to prevent the current blocking layer 50 from hindering the holes from moving to the center of the main body 31 as in the first embodiment, so that the number of holes in the main body 31 is further increased without the current crowding of the light-emitting device 100. The side light leakage of the light-emitting device 100 is reduced, the light-emitting angle can be converged, the light emission of the light-emitting layer 30 is concentrated in the main body 31, and the amount of light emitted in the forward direction of the light-emitting device 100 is increased.

[0107] Optionally, the thickness of the second transparent conductive layer 82 is in the range of 5 nanometers to 2 micrometers. The thickness of the second transparent conductive layer 82 is less than or equal to the thickness of the first transparent conductive layer 81. This shortens the carrier transmission path and improves the efficiency of front light emission.

[0108] The above is a detailed description of the specific implementation of the present application. The above implementation disclosed in the present application is only the preferred implementation of the present application. For ordinary technicians in this field, many modifications and improvements can be made without departing from the concept of the present application. These modifications and improvements all fall within the scope of protection defined by the claims of the present application.

Claims

1. A light emitting device, characterized in that: include: substrate; A first semiconductor layer, disposed on one side of the substrate; A light emitting layer is provided on a side of the first semiconductor layer away from the substrate, the light emitting layer comprising a main body and an edge portion arranged around the main body; A second semiconductor layer is disposed on a side of the light emitting layer away from the first semiconductor layer; as well as A current blocking layer, disposed on a side of the second semiconductor layer away from the light emitting layer; A first blocking portion is located at a side of the light emitting layer away from the first semiconductor layer, the resistance of the first blocking portion is greater than the resistance of the current blocking layer, and the orthographic projection of the first blocking portion on the substrate overlaps with the orthographic projection of the edge portion on the substrate; An orthographic projection of the first blocking portion on the substrate is located on at least one side of an orthographic projection of the current blocking layer on the substrate.

2. The light emitting device according to claim 1, characterized in that: The first blocking portion includes a first sub-portion and a second sub-portion, the orthographic projection of the first sub-portion on the substrate and the orthographic projection of the second sub-portion on the substrate are respectively located at the periphery of the orthographic projection of the current blocking layer on the substrate, the orthographic projection of the first sub-portion on the substrate overlaps with the orthographic projection of the edge portion on the substrate, and the orthographic projection of the second sub-portion on the substrate overlaps with the orthographic projection of the edge portion on the substrate.

3. The light emitting device according to claim 1, characterized in that: The orthographic projection of the first blocking portion on the substrate is arranged around the periphery of the orthographic projection of the current blocking layer on the substrate.

4. The light emitting device according to any one of claims 1 to 3, characterized in that: The first blocking portion is disposed on a side of the second semiconductor layer away from the light emitting layer and is disposed in the same layer as the current blocking layer.

5. The light emitting device according to claim 4, characterized in that: The thickness of the first blocking portion is greater than the thickness of the current blocking layer.

6. The light emitting device according to claim 4, characterized in that: The first barrier portion includes at least two first sub-layers, which are stacked along a thickness direction of the light emitting device, and the material of the first sub-layers is an insulating material.

7. The light emitting device according to any one of claims 1 to 3, characterized in that: The first blocking portion is disposed on a side of the light emitting layer away from the first semiconductor layer and is disposed on the same layer as the second semiconductor layer.

8. The light emitting device according to any one of claims 1 to 3, characterized in that: An opening is provided in a portion of the second semiconductor layer corresponding to the edge portion, a portion of the first blocking portion is filled in the opening, and another portion of the first blocking portion is provided in the current blocking layer.

9. The light emitting device according to any one of claims 1 to 3, characterized in that: The light emitting device further comprises: A first electrode connected to a side of the first semiconductor layer away from the substrate; and A second blocking portion is disposed on the same layer as the first semiconductor layer; The orthographic projection of the second blocking portion on the substrate is located at least on one side of the orthographic projection of the first semiconductor layer on the substrate, and the orthographic projection of the second blocking portion on the substrate overlaps with the orthographic projection of the edge portion on the substrate.

10. The light emitting device according to any one of claims 1 to 3, characterized in that: The first blocking portion is disposed on a side of the second semiconductor layer away from the light emitting layer; The light emitting device further comprises: A first transparent conductive layer is provided on a side of the second semiconductor layer away from the light emitting layer and covers the first blocking portion, and the current blocking layer is provided on a side of the first transparent conductive layer away from the first semiconductor layer; a second transparent conductive layer, disposed on a side of the first transparent conductive layer away from the first semiconductor layer and covering the current blocking layer; The second electrode is connected to a side of the second transparent conductive layer away from the first transparent conductive layer.

11. The light emitting device according to any one of claims 1 to 3, characterized in that: The light emitting device further comprises a light extraction structure, wherein the light extraction structure is arranged on a side of the substrate away from the first semiconductor layer; The orthographic projection of the light extraction structure on the substrate overlaps with the orthographic projection of the main body on the substrate, and the orthographic projection of the first blocking portion on the substrate is located on at least one side of the orthographic projection of the light extraction structure on the substrate.

12. A display device, characterized in that: The invention comprises a light emitting device as claimed in any one of claims 1 to 11.

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