Surface treatment equipment and method for a semiconductor device

Abstract

The present invention relates to the technical field of surface treatment of semiconductor laser chips, and discloses a surface treatment device and method for a semiconductor device. The surface treatment device includes a vacuum chamber, a light source irradiation device, a fixture, and a control device; the vacuum chamber has an accommodation space and a window, the fixture is located in the accommodation space, the fixture is used to fix at least one semiconductor laser chip to be processed, and the cleavage cavity surface of the semiconductor laser chip faces the window; the light source irradiation device includes a light source and a temperature detection component, the light source is arranged outside the window, the temperature detection component is used to detect the temperature of the cleavage cavity surface, and the photon energy corresponding to the light source is greater than the maximum bandgap width of the semiconductor laser chip; the control device is used to turn on the light source and to adjust the output power of the light source based on the temperature of the cleavage cavity surface detected by the temperature detection component, so that the temperature of the cleavage cavity surface is at a target temperature. The present invention can improve the situation of high-temperature failure of the core part of the semiconductor laser chip.

Description

Technical Field

[0001] The present invention relates to the technical field of surface treatment of semiconductor laser chips, and particularly to a surface treatment device and method for semiconductor devices. Background Art

[0002] II-VI, III-V and other compound semiconductor laser chips have advantages such as a wide wavelength range, high output power, and good beam quality, and can be applied to fields such as optical communication, laser processing, and image display. In the process of semiconductor laser technology, especially after the cleavage of semiconductor laser chips, the cleaved cavity surface exposed to air will adsorb a large amount of organic substances and water, and at the same time, oxidation will occur. Compounds such as II-O, VI-O, III-O, and V-O form a large number of defects on the cleaved cavity surface of semiconductor laser chips, which may cause the failure of semiconductor laser chips. Therefore, it is necessary to perform surface treatment on the cleaved cavity surface of semiconductor laser chips.

[0003] The surface treatment process removes these organic contaminants and defects through physical bombardment, chemical reactions and other treatment means. This process is usually accompanied by heating of the treated surface. By high temperature, the activity of surface organic substances, oxides and other contaminants and defects can be increased. Generally, the higher the surface temperature, the more beneficial to the treatment effect.

[0004] However, the currently commonly used infrared radiation heating method will also make the core parts (such as quantum wells, etc.) of semiconductor laser chips in a high-temperature state, which may cause irreversible damage to the core parts of semiconductor laser chips, such as over-alloying of metal electrodes, defect diffusion, etc. Summary of the Invention

[0005] In view of this, the present invention provides a surface treatment device and method for semiconductor devices to improve the problem of high-temperature failure of the core parts of semiconductor laser chips caused by the infrared radiation heating method.

[0006] In a first aspect, the present invention provides a surface treatment device for a semiconductor device, the surface treatment device comprising a vacuum chamber, a light source irradiation device, a fixture and a control device; the vacuum chamber has an accommodation space and a window, the fixture is located in the accommodation space, the fixture is used for fixing at least one semiconductor laser chip to be processed, and the cleavage cavity surface of the semiconductor laser chip faces the window; the light source irradiation device comprises a light source and a temperature detection component, the light source is arranged outside the window, the temperature detection component is used for detecting the temperature of the cleavage cavity surface, and the photon energy corresponding to the light source is greater than the maximum bandgap width of the semiconductor laser chip; the control device is used for turning on the light source to perform light irradiation on the cleavage cavity surface, and for adjusting the output power of the light source based on the temperature of the cleavage cavity surface detected by the temperature detection component, so that the temperature of the cleavage cavity surface is at a target temperature.

[0007] In this embodiment, by irradiating the cleavage cavity surface with a light source whose photon energy is greater than the maximum bandgap width of the semiconductor laser chip, the temperature rise in other regions of the semiconductor laser chip except the cavity surface can be made smaller, which can not only improve the surface treatment effect, but also improve the situation of high-temperature failure of the core part of the semiconductor laser chip.

[0008] In an optional implementation manner, the wavelength of the light source is less than 800 nm.

[0009] In an optional implementation manner, the wavelength of the light source is less than the ultraviolet light wavelength, and the surface treatment device further comprises a surface treatment device, and the surface treatment device and the light source irradiation device are located on the same side of the cleavage cavity surface; the surface treatment device comprises a surface treatment gas source, and the surface treatment gas source is arranged outside the window; the control device is further used for turning on the surface treatment gas source when the temperature of the cleavage cavity surface is at the target temperature, so as to remove the pollutants on the cleavage cavity surface based on a photochemical reaction.

[0010] In this embodiment, irradiating with light of a short wavelength (wavelength below 800 nm), that is, selecting a light source with photon energy greater than the maximum bandgap width of the semiconductor laser chip for light irradiation, can only involve surface heating and surface photochemistry. It can not only make the cleavage cavity surface obtain a very high temperature (target temperature), which is beneficial to removing organic pollution and oxides through surface treatment and photochemical reaction, but also make the temperature of the main area (core area) of the semiconductor laser chip lower, avoiding damage to metal electrodes and other material structures.

[0011] In an optional implementation manner, the surface treatment gas source comprises a plasma source and / or a reducing hydrogen atom source.

[0012] In an alternative embodiment, the light source irradiation device further includes a lens assembly and a charge-coupled device imaging assembly; the lens assembly is used to adjust the size and position of the light spot generated by the light source; the charge-coupled device imaging assembly is used to collect the image information of the window, and the control device is further used to determine the position of the cleavage cavity surface in the accommodation space based on the image information.

[0013] In an alternative embodiment, the surface treatment device further includes a surface coating device; the surface coating device includes a passivation material evaporation source, and the passivation material evaporation source is arranged outside the window; the control device is further used to turn on the passivation material evaporation source after the temperature of the cleavage cavity surface reaches the target temperature, so as to deposit a passivation protective film layer on the cleavage cavity surface.

[0014] In this embodiment, after removing the contaminants on the cleavage cavity surface, the passivation material evaporation source is turned on, and a passivation protective film layer is deposited on the cleavage cavity surface after removing the contaminants, so as to isolate the cavity surface from the external environment and prevent the cavity surface from being eroded by water vapor, oxygen, etc., thereby improving the stability and service life of the laser.

[0015] In an alternative embodiment, the surface treatment device further includes a heat dissipation device, and the heat dissipation device is connected to the fixture.

[0016] In this embodiment, the heat dissipation device is used for lateral heat dissipation of the heated semiconductor laser chip, which can avoid too high temperature in the main area of the semiconductor laser chip.

[0017] In an alternative embodiment, the thermal conductivity of the fixture is greater than or equal to 200 W / (m·K).

[0018] In a second aspect, the present invention provides a surface treatment method for a semiconductor device, which is applied to the control device of the surface treatment device of the semiconductor device in the first aspect or any corresponding embodiment thereof. The surface treatment method includes: turning on the light source to perform light irradiation on the cleavage cavity surface of the semiconductor laser chip to be processed; adjusting the output power of the light source based on the temperature of the cleavage cavity surface detected by the temperature detection component, so that the temperature of the cleavage cavity surface reaches the target temperature.

[0019] In this embodiment, heating the cleavage cavity surface of the semiconductor laser chip by a light source with a short wavelength can make the temperature rise of other regions of the semiconductor laser chip except the cavity surface smaller, and improve the situation of high-temperature failure of the core part of the semiconductor laser chip.

[0020] In an alternative embodiment, the surface treatment method further includes: when the temperature of the cleavage cavity surface reaches the target temperature, turning on the surface treatment gas source to remove the contaminants on the cleavage cavity surface based on a photochemical reaction. Brief Description of the Drawings

[0021] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the related art, the following will briefly introduce the drawings required for use in the description of the specific embodiments or the related art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0022] Figure 1 is a structural block diagram of a surface treatment device for a semiconductor device according to an embodiment of the present invention;

[0023] Figure 2 is a schematic diagram of the photon heating cycle of a semiconductor surface material according to an embodiment of the present invention;

[0024] Figure 3 is a schematic diagram of the light source irradiation heating effect according to an embodiment of the present invention;

[0025] Figure 4 is a structural block diagram of another surface treatment device for a semiconductor device according to an embodiment of the present invention;

[0026] Figure 5 is a schematic flowchart of a surface treatment method for a semiconductor device according to an embodiment of the present invention.

[0027] Reference Numerals: 110, vacuum chamber; 111, accommodation space; 112, window; 120, light source irradiation device; 121, light source; 122, lens assembly; 130, fixture; 140, control device; 150, surface treatment device; 151, surface treatment gas source; 160, surface coating device; 161, passivation material evaporation source; 200, semiconductor laser chip; 201, irradiation strong absorption region; 210, cleavage cavity surface. Detailed Embodiments

[0028] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0029] The present invention provides a surface treatment device and method for a semiconductor device. By using a light source with a short wavelength (wavelength less than 800 nm) to heat the cleavage cavity surface of a semiconductor laser chip, the temperature during the surface treatment of the cavity surface of the semiconductor laser chip is increased. It can make the temperature rise of other regions of the semiconductor laser chip except the cavity surface smaller, and improve the situation of high-temperature failure of the core part of the semiconductor laser chip.

[0030] First, the surface treatment device for a semiconductor device provided by the present invention will be described in detail with reference to the accompanying drawings.

[0031] As Figure 1 shown, the surface treatment device for a semiconductor device includes a vacuum chamber 110, a light source irradiation device 120, a fixture 130, and a control device 140.

[0032] The vacuum chamber 110 has a receiving space 111 and a window 112. The fixture 130 is located in the receiving space 111. The fixture 130 is used to fix at least one semiconductor laser chip 200 to be processed, and the cleavage cavity surface 210 of the semiconductor laser chip 200 to be processed faces the window 112.

[0033] Specifically, when the number of semiconductor laser chips 200 to be processed is multiple, as Figure 1 shown, multiple semiconductor laser chips 200 to be processed can be stacked in sequence and then fixed on the fixture 130. Among them, the cleavage cavity surfaces 210 of the multiple semiconductor laser chips 200 stacked are on the same side.

[0034] The cleavage cavity surface 210 refers to the cavity surface with specific functions and effects formed on the chip through the cleavage process, and can correspond to the front cavity surface and the rear cavity surface of the semiconductor laser chip 200. In Figure 1 , the left side surface and the right side surface of the semiconductor laser chip 200 to be processed are cleavage cavity surfaces.

[0035] The vacuum chamber 110 can refer to the chamber that provides a vacuum environment for the semiconductor laser chip 200 to be processed. The fixture 130 can be fixedly arranged on the chamber wall of the chamber through a fixing component. After fixing the semiconductor laser chip 200 to be processed on the fixture 130, the chamber with the receiving space 111 and the window 112 can be evacuated (for example, the vacuum degree P < 1E - 9 torr) to form the vacuum chamber 110.

[0036] The window 112 can be made of a transparent material such as optical glass or quartz glass, so that the light generated by the light source irradiation device 120 can enter the receiving space 111 and irradiate the surface of the semiconductor laser chip 200 to be processed.

[0037] Exemplarily, the fixture 130 can be a mechanical fixture, a vacuum adsorption fixture, etc. The present invention does not make specific limitations, as long as it can fix the semiconductor laser chip 200 in the accommodation space.

[0038] The light source irradiation device 120 includes a light source 121 and a temperature detection component (not shown in the figure). The light source 121 is disposed outside the window 112. The temperature detection component is used to detect the temperature of the cleavage cavity surface 210. The photon energy corresponding to the light source 121 is greater than the maximum bandgap width of the semiconductor laser chip 200 to be processed. That is, the wavelength of the light source in the light source irradiation device 120 is relatively short (for example, the light source wavelength is less than 800 nm).

[0039] The material of the semiconductor laser chip 200 is generally more than one kind. The maximum bandgap width refers to the maximum value of the bandgap widths corresponding to the respective materials of the semiconductor laser chip 200. The bandgap width refers to the energy difference between the valence band top and the conduction band bottom in the semiconductor material, and the unit is electron volts (eV).

[0040] For example, for a typical 915 nm semiconductor laser chip material, according to its material bandgap (bandgap width), the optional light source wavelengths determined can be as shown in Table 1.

[0041] Table 1

[0042]

[0043] Specifically, when the semiconductor laser chip 200 to be processed is a typical 915 nm semiconductor laser chip, as shown in Table 1, the light source wavelength can be green light, blue light, purple light, ultraviolet light, far ultraviolet light, etc.

[0044] Exemplarily, the light source 121 can be an edge-emitting laser, a surface-emitting laser, an LED light source, etc. The temperature detection component can be a temperature measurement element such as an infrared imaging thermometer or a temperature sensor.

[0045] Specifically, the light source 121 can be fixedly disposed outside the window 112 through a fixing component. The setting position of the temperature detection component is determined based on the type of the temperature detection component. For example, if the temperature detection component is an infrared imaging thermometer, the temperature detection component can also be disposed outside the window 112; if the temperature detection component is a temperature sensor, the temperature detection component can be disposed on the cleavage cavity surface 210.

[0046] The control device 140 is used to turn on the light source 121 to perform light irradiation on the cleavage cavity surface 210, and is used to adjust the output power of the light source 121 based on the temperature of the cleavage cavity surface 210 detected by the temperature detection component, so that the temperature of the cleavage cavity surface 210 is at a target temperature.

[0047] Exemplarily, the control device 140 can be a processor or a device such as a computer or a computer containing a processor.

[0048] After the control device 140 obtains the temperature value from the temperature detection component, it can adjust the output power of the light source 121 based on the correspondence between the temperature and the output power until the temperature value detected by the temperature detection component reaches the target temperature. The correspondence between the temperature and the output power can be determined based on experiments, and the target temperature can be set by the designer according to the requirements of the surface treatment.

[0049] Specifically, when heating the surface of the semiconductor laser chip 200 to be processed by the surface treatment device of the semiconductor device, at least one semiconductor laser chip 200 to be processed can be arranged and fixed on the fixture 130 in sequence, the fixture 130 can be fixedly arranged in the cavity, so that the cleavage cavity surface 210 of at least one semiconductor laser chip 200 to be processed faces the window, and the cavity is evacuated to form a vacuum cavity 110. Then, in response to the operation of the staff, the control device 140 turns on the light source 121 in the light source irradiation device 120, and the light generated by the light source 121 irradiates the cleavage cavity surface 210.

[0050] After the cleavage cavity surface 210 of the semiconductor laser chip 200 receives light, the semiconductor material can quickly absorb photons greater than its bandgap due to its band characteristics, the surface material of the semiconductor material quickly absorbs the photon energy, and the surface material temperature rises rapidly. Further, since the bandgap of the semiconductor material decreases with the increase of temperature, that is, the difference between the photon energy and the bandgap is larger, more heat absorption can be generated, thereby forming a cycle as shown in Figure 2 to greatly increase the surface temperature of the semiconductor, which is beneficial to the surface treatment. At the same time, the temperature of other regions of the semiconductor laser chip except the cavity surface is not irradiated by photons, and the temperature rise is small, ensuring that the semiconductor material does not change.

[0051] Among them, the light source irradiation heating effect can be as shown in Figure 3 The penetration of the selected light source wavelength in the light source irradiation device 120 is shorter than that of the long-wavelength infrared light (above 1000nm). When using this light source for surface heating, the range of the strong absorption region 201 of the irradiation is relatively narrow, which can avoid the temperature of the core region of the semiconductor laser chip being too high when the temperature of the surface layer near the cleavage cavity surface of the semiconductor laser chip is relatively high.

[0052] Moreover, during the above heating process, the temperature detection component can monitor the temperature of the cleavage cavity surface, the control device obtains the detected temperature value from the temperature detection component, and adjusts the output power of the light source based on the temperature value until the temperature of the cleavage cavity surface 210 of the semiconductor laser chip reaches the target temperature.

[0053] In this embodiment, by irradiating the cleavage cavity surface with a light source whose photon energy is greater than the maximum bandgap width of the semiconductor laser chip, the temperature rise in areas other than the cavity surface of the semiconductor laser chip can be made relatively small. This can not only improve the surface treatment effect but also prevent the core part of the semiconductor laser chip from failing due to high temperature.

[0054] Exemplarily, as Figure 4 shown, the light source irradiation device 120 may further include a lens assembly 122 and a Charge Coupled Device (CCD) imaging assembly (not shown in the figure).

[0055] Specifically, the lens assembly 122 is used to adjust the size and position of the light spot generated by the light source 121, enabling the device to match semiconductor laser chips of different sizes. The charge coupled device imaging assembly is used to collect image information in the window 112 area, and the control device 140 is further used to determine the position of the cleavage cavity surface 210 in the accommodation space 111 based on the image information.

[0056] In this embodiment, the surface treatment device further includes a moving device. After fixing the semiconductor laser chip 200 to be processed in the vacuum cavity 110, the control device 140 can determine the position of the cleavage cavity surface 210 in the accommodation space 111 through the automatic recognition and alignment device of the charge coupled device imaging assembly. Then, the control device can move the position of the light source through the moving device, so that the light generated by the light source 121 passes through the lens assembly 122 and the window 112 and precisely irradiates the cleavage cavity surface 210 of the semiconductor laser chip 200 to be processed.

[0057] Among them, the method of determining the position of the target area (i.e., the cleavage cavity surface 210) based on the collected image information can be the conventional target detection and recognition methods in image processing in this field, which will not be elaborated here.

[0058] In some embodiments, as Figure 4 shown, the wavelength of the light source is less than the ultraviolet light wavelength. The surface treatment device further includes a surface treatment device 150, and the surface treatment device 150 includes a surface treatment gas source 151, which is arranged outside the window 112. The control device 140 is further used to open the surface treatment gas source 151 when the temperature of the cleavage cavity surface 210 reaches the target temperature, so as to remove the pollutants on the cleavage cavity surface 210 based on the photochemical reaction.

[0059] Among them, the surface treatment device and the light source irradiation device are located on the same side of the cleavage cavity surface. For example, as Figure 4 shown, both the surface treatment device and the light source irradiation device are arranged on the left side of the cleavage cavity surface.

[0060] Specifically, traditional radiation heating devices generally have a filament structure and need to be close to the surface to be heated during heating. To avoid affecting the pollutants on the surface to be treated by the surface treatment device, traditional radiation heating devices are generally arranged on the back of the cleavage cavity surface and cannot be arranged on the same side as the surface treatment device. Compared with traditional radiation heating devices, the light source irradiation device in this embodiment can also achieve a good heating effect when far away from the surface of the heating material. The surface to be treated of the surface treatment device and the light source irradiation (heating / photochemical reaction) surface can be the same surface.

[0061] The surface treatment device 150 can remove organic contaminants, oxides, etc. on the high-temperature surface through physical bombardment by plasma, combined chemical reduction with reducing gas, and auxiliary photochemical reaction processes, etc.

[0062] Exemplarily, the surface treatment gas source 151 includes a plasma source and / or a reducing hydrogen atom source.

[0063] During the above heating process, combined with plasma or atomic hydrogen, a photochemical reaction is simultaneously carried out. The absorption of short-wave photons generates an electron energy transition, forming an unstable excited state, which can reduce the oxides on the cleavage cavity surface of the semiconductor laser chip, such as indium gallium aluminum arsenide phosphide oxide (O-AsPInGaAl) and organic oxides (R-O-R'), with hydrogen atoms or ions, and remove the oxygen atoms on the surface.

[0064] Specifically, the reaction is to excite the chemical bonds in the oxide molecules to a high-energy state by high-energy photons such as ultraviolet light or violet light, and then the excited molecules in the high-energy state are dissociated into two or more molecules, atoms or free radicals to decompose the organic contaminants, usually by breaking and decomposing on the oxidation bond.

[0065] Among them, the excitation dissociation process of inorganic oxides is: O-AsPInGaAl + 2H + photon energy (hv) → AsPInGaAl + H2O; the excitation dissociation process of organic oxides is: R-O-R' + 2H + hv → R + R' + H2O.

[0066] In this embodiment, light irradiation with a short wavelength (wavelength below 800 nm) is adopted, that is, a light source with a photon energy greater than the maximum bandgap width of the semiconductor laser chip is selected for light irradiation, which can only involve surface heating and surface photochemistry. It can not only make the cleavage cavity surface obtain a very high temperature (target temperature), which is beneficial to removing organic contaminants and oxides through surface treatment and photochemical reaction, but also make the temperature of the main body area (core area) of the semiconductor laser chip lower, avoiding damage to metal electrodes and other material structures.

[0067] Exemplarily, such as Figure 4As shown, the surface treatment device further includes a surface coating device 160. The surface coating device 160 includes a passivation material evaporation source 161, and the passivation material evaporation source 161 is disposed outside the window 112. The control device is further configured to turn on the passivation material evaporation source 161 after the temperature of the cleavage cavity surface 210 reaches the target temperature, so as to deposit a passivation protection film layer on the cleavage cavity surface 210.

[0068] Exemplarily, the passivation material may be a sulfide, a selenide, a nitride, or the like.

[0069] In this embodiment, after removing the contaminants on the cleavage cavity surface, the passivation material evaporation source 161 is turned on, and a passivation protection film layer is deposited on the cleavage cavity surface 210 after removing the contaminants, isolating the cavity surface from the external environment to prevent the cavity surface from being eroded by water vapor, oxygen, etc., thereby improving the stability and service life of the laser.

[0070] In some alternative embodiments, the surface treatment device may further include a heat dissipation device. The heat dissipation device is connected to the fixture to perform lateral heat dissipation for the heated semiconductor laser chip, avoiding excessive temperature in the main area of the semiconductor laser chip.

[0071] Exemplarily, the thermal conductivity of the fixture is greater than or equal to 200 W / (m·K), which improves the speed of heat conduction to the heat dissipation state, thereby enhancing the heat dissipation effect. In this embodiment, the fixture may be a fixture made of a high-thermal-conductivity metal material such as copper.

[0072] In this embodiment, a surface treatment method for a semiconductor device is further provided, which can be used for the control device of the surface treatment device for a semiconductor device provided in any of the above embodiments. Figure 5 It is a schematic flowchart of a surface treatment method for a semiconductor device according to an embodiment of the present invention, as Figure 5 shown. The method includes the following steps:

[0073] Step S501: Turn on the light source to irradiate the cleavage cavity surface of the semiconductor laser chip to be processed with light.

[0074] Specifically, the control device may turn on the light source based on an indication message, so that the light generated by the light source irradiates the cleavage cavity surface of the semiconductor laser chip to be processed. The indication message may come from a user or an electronic device.

[0075] Step S502: Adjust the output power of the light source based on the temperature of the cleavage cavity surface detected by the temperature detection component, so that the temperature of the cleavage cavity surface reaches the target temperature.

[0076] Specifically, after the control device obtains the temperature value from the temperature detection component, it may adjust the output power of the light source based on the correspondence between the temperature and the output power until the temperature value detected by the temperature detection component reaches the target temperature.

[0077] Among them, the corresponding relationship between temperature and output power can be determined based on experiments, and the target temperature can be set by the designer according to the requirements of surface treatment.

[0078] In this embodiment, by heating the cleavage cavity surface of the semiconductor laser chip with a short-wavelength light source, the temperature rise of other regions of the semiconductor laser chip except the cavity surface can be made smaller, improving the situation of high-temperature failure of the core part of the semiconductor laser chip.

[0079] In some alternative embodiments, when the temperature of the cleavage cavity surface reaches the target temperature, the control device can turn on the surface treatment gas source to remove the contaminants on the cleavage cavity surface based on photochemical reactions.

[0080] Furthermore, after the temperature of the cleavage cavity surface reaches the target temperature, the control device can also turn on the passivation material evaporation source to deposit a passivation protective film layer on the cleavage cavity surface.

[0081] Exemplarily, taking Figure 4 the surface treatment equipment of the semiconductor device shown as an example, the surface treatment method of the semiconductor device provided by the present invention will be described in detail.

[0082] Specifically, when the surface treatment of the semiconductor laser chip is required, first, the semiconductor laser chips 200 to be processed are arranged and fixed on the high-thermal conductivity (thermal conductivity greater than 200 W / (m·K)) fixture 130 in sequence, and then the high-thermal conductivity fixture 130 is fixedly arranged in the vacuum cavity 110 and connected to the heat dissipation device. Among them, the light source irradiation device 120 is fixed outside the window 112, and at the same time, the surface treatment device 150 and the surface coating device 160 are also fixed on the same side.

[0083] After that, the cavity is evacuated to a vacuum degree of P < 1E-9 torr. After the vacuum cavity 110 is formed, the automatic recognition and alignment device of the CCD imaging component is used to determine the target range (i.e., the position where the cleavage cavity surface is located) that needs to be irradiated by the light source.

[0084] Then, the control device 140 adjusts the position of the light source 121 based on the determined position of the cleavage cavity surface 210. After adjustment, the light source 121 is turned on. The light wave generated by the light source 121 irradiates the cleavage cavity surface 210 through the lens assembly 122. At the same time, the control device 140 adjusts the output power of the light source through the temperature feedback of the infrared imaging thermometer, so that the cavity surface (i.e., the cleavage cavity surface) of the semiconductor laser chip 200 reaches the specified high temperature (i.e., the target temperature).

[0085] When a specified high temperature is reached on the cavity surface, the surface treatment device 150 is turned on to generate a plasma source and a reducing hydrogen atom source. Using the high temperature and photochemical reaction, the organic contamination on the cavity surface of the semiconductor laser chip 200 is removed.

[0086] After that, the light source irradiation device 120 and the surface treatment device 150 stop working, and the surface coating device 160 is turned on to evaporate a passivation protective film material on the already cleaned cavity surface. After the evaporation is completed, the surface coating device 160 is turned off, and the processed high thermal conductivity fixture 130 and the semiconductor laser chip 200 on the high thermal conductivity fixture 130 are taken out, and then the next processing step can be carried out.

[0087] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0088] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0089] It should be understood that the various parts of the present invention can be implemented by hardware, software, firmware or a combination thereof. In the above embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, any one or a combination of the following well-known technologies in the art can be used: discrete logic circuits having logic gate circuits for implementing logic functions on data signals, application-specific integrated circuits having appropriate combinational logic gate circuits, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), etc.

[0090] In the description of this specification, the descriptions referring to terms such as "this embodiment", "one embodiment", "some embodiments", "examples", "specific examples", or "some examples", etc., mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0091] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" can explicitly or implicitly include at least one of such features. In the description of the present invention, "a plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0092] Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations all fall within the scope defined by the present invention.

Claims

1. A surface treatment device for a semiconductor device, characterized in that: The surface treatment equipment includes a vacuum chamber, a light source irradiation device, a surface treatment device, a heat dissipation device, a fixture and a control device; The vacuum chamber has a containing space and a window, the fixture is located in the containing space, the fixture is used to fix at least one semiconductor laser chip to be processed, and the cleavage cavity surface of the semiconductor laser chip faces the window; The light source irradiation device comprises a light source and a temperature detection component, wherein the light source is arranged outside the window, and the temperature detection component is used to detect the temperature of the cleavage cavity surface. The photon energy corresponding to the light source is greater than the maximum bandgap width of the semiconductor laser chip, so that no photon irradiation is performed on other regions of the semiconductor laser chip except the surface of the cleavage cavity surface, and the wavelength of the light source is less than the wavelength of ultraviolet light. The control device is used to turn on the light source to irradiate the cleavage cavity surface with light, and to adjust the output power of the light source based on the temperature of the cleavage cavity surface detected by the temperature detection component, so that the temperature of the cleavage cavity surface is at a target temperature; The surface treatment device and the light source irradiation device are located on the same side of the cleavage cavity surface. The surface treatment device removes pollutants on the cleavage cavity surface by plasma physical bombardment, combined with chemical reduction of reducing gas and auxiliary photochemical reaction process. The surface treatment device includes a surface treatment gas source, and the surface treatment gas source is arranged outside the window; The control device is also used to open the surface treatment gas source when the temperature of the cleavage cavity surface is at a target temperature, so as to remove the pollutants on the cleavage cavity surface based on a photochemical reaction, wherein the photochemical reaction refers to exciting the oxide on the cleavage cavity surface by photons of the light source; The heat sink is connected to the fixture and is used for lateral heat dissipation for the heated semiconductor laser chip. The thermal conductivity of the fixture is greater than or equal to 200 W / (m·K).

2. The surface treatment equipment according to claim 1, characterized in that: The wavelength of the light source is less than 800 nm.

3. The surface treatment equipment according to claim 1, characterized in that: The surface treatment gas source includes a plasma source and / or a reducing hydrogen atom source.

4. The surface treatment device according to any one of claims 1 to 3, characterized in that: The light source irradiation device also includes a lens assembly and a charge coupled device imaging assembly; The lens assembly is used to adjust the size and position of the light spot generated by the light source; The charge coupled device imaging component is used to collect image information in the window, and the control device is also used to determine the position of the cleavage cavity surface in the accommodation space based on the image information.

5. The surface treatment equipment according to any one of claims 1 to 3, characterized in that: The surface treatment equipment also includes a surface coating device; The surface coating device comprises a passivation material evaporation source, and the passivation material evaporation source is arranged outside the window; The control device is also used to turn on the passivation material evaporation source after the temperature of the cleavage cavity surface reaches the target temperature, so as to evaporate a passivation protection film layer on the cleavage cavity surface.

6. A surface treatment method for a semiconductor device, characterized in that: A control device for a surface treatment equipment for a semiconductor device according to any one of claims 1 to 5, wherein the surface treatment method comprises: Turning on the light source to irradiate the cleavage cavity surface of the semiconductor laser chip to be processed; Based on the temperature of the cleavage cavity surface detected by the temperature detection component, adjusting the output power of the light source so that the temperature of the cleavage cavity surface is at a target temperature; When the temperature of the cleavage cavity surface is at a target temperature, a surface treatment gas source is turned on to remove pollutants on the cleavage cavity surface based on a photochemical reaction, wherein the photochemical reaction refers to exciting oxides on the cleavage cavity surface by photons of the light source.

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