A rough shaping assembly block and shaping method for high temperature and high pressure cultured diamond

Abstract

The invention discloses a roughcast molding assembly block for high-temperature and high-pressure cultured diamonds, comprising a pressure-transmitting sealing component, wherein the pressure-transmitting sealing component has a generation cavity, wherein a carbon source layer, a catalyst layer and a crystal bed are stacked in the generation cavity, wherein a plurality of molding cavities in the form of inverted frustums are provided on a side of the crystal bed facing the catalyst layer, a seed hole is provided at the center of the bottom of the molding cavity, and the catalyst layer protrudes toward the crystal bed to form a plurality of protrusions corresponding to the molding cavities one by one, for filling the molding cavities; the molding cavity provided in the invention is used for molding the lower part of the roughcast, so that the lower part of the roughcast is in a shape similar to an inverted pyramid, and the upper part of the roughcast grows in a shape similar to a pyramid under suitable temperature and pressure conditions, and the roughcast similar to a biconical shape can cut out two naked diamonds, thereby greatly improving the utilization rate of the roughcast, and the diamond yield rate reaches about 50%-70%.

Description

Technical Field

[0001] The invention belongs to the technical field of cultured diamonds, and in particular relates to a rough molding assembly block and a molding method for high-temperature and high-pressure cultured diamonds. Background Art

[0002] The artificial cultured diamond industry has developed rapidly in recent years. Both the high temperature and high pressure method and the vapor deposition method have made great progress. Among them, the high temperature and high pressure method is more popular and the related technological innovation is more frequent. With the diversification and precision of market positioning, the product types of high temperature and high pressure cultured diamonds are becoming more and more diverse. The rough particle size ranges from about 1 mm to more than 10 mm, and there are specific customer groups. Different technical routes are derived for different particle sizes.

[0003] At present, the spontaneous nucleation technology is mainly used for small particles below 3 mm, and the seed method is mainly used for particles above 3 mm. For the seed method of growing diamonds above 3 mm, it has become a technical problem for many production companies due to its long growth time, high color and clarity requirements, and high technical difficulty. The mainstream technology on the market is basically the traditional seed method. This method has no major problems in the production of small and medium-sized roughs, but as the particles become larger and larger, its disadvantages are becoming more and more obvious. For example, the shape of the crystal cannot be controlled artificially, and it becomes flat and irregular after growing up. The diamond yield of later cutting and grinding is very low, resulting in a lot of waste. Generally, a rough of about 3 carats can grind out a loose diamond of about 1 carat, and the diamond yield is about 33%. The excess part not only increases the time cost of grinding the diamond, but also increases the material cost of purchasing the rough. Summary of the invention

[0004] The object of the present invention is to provide a rough molding assembly block and molding method for high temperature and high pressure cultured diamonds to solve at least one of the above technical problems.

[0005] To achieve the above object, the technical solution adopted by the present invention is:

[0006] A rough molding assembly block for high-temperature and high-pressure cultured diamonds comprises a pressure-transmitting sealing component, wherein the pressure-transmitting sealing component has a generation cavity, in which a carbon source layer, a catalyst layer and a crystal bed are stacked, wherein a plurality of inverted frustum-shaped molding cavities are provided on a side of the crystal bed facing the catalyst layer, a seed hole is provided at the center of the bottom of the molding cavity, and the catalyst layer protrudes toward the crystal bed to form a plurality of protrusions corresponding to the molding cavities one by one, for filling the molding cavities.

[0007] The present invention sets a molding cavity, and a seed crystal starts to grow from a seed crystal hole at the bottom of the molding cavity. Under suitable temperature and pressure, and because the molding cavity is in the shape of an inverted frustum, the seed crystal gradually grows into a blank with a shape close to an inverted pyramid in the molding cavity. After the blank continues to grow outside the molding cavity, it loses the restriction of the molding cavity. The bottom growth time of the portion of the blank located outside the molding cavity is longer, and the top growth time is shorter, so that the shape of the portion of the blank located outside the molding cavity is close to a pyramid. Finally, the shape of the blank is similar to a double cone composed of an inverted pyramid and a pyramid. The blank similar to the double cone can cut out two naked diamonds, which greatly improves the utilization rate of the blank, and the drill yield rate reaches about 50%-70%.

[0008] Specifically, the pressure transmission sealing assembly includes a pressure transmission seal, and the pressure transmission seal includes a synthetic cavity. An insulation pipe is provided in the synthetic cavity. Two conductive insulation blocks, two conductive blocks and a heating pipe are provided in the insulation pipe. The heating pipe is located between the two conductive blocks. The two conductive blocks are located between the two conductive insulation blocks. Insulation layers are provided at both ends of the heating pipe, and the generating cavity is formed between the two insulation layers.

[0009] The assembly block of the present invention cooperates with a six-sided top press to realize the shaping of diamond blanks. The assembly block is loaded into the six-sided top press, and two conductive insulation blocks are energized. The pressure is transmitted to the heating tube through the pressure transmission seal, the insulation tube and the heating tube. The electricity is transmitted to the heating tube through the conductive insulation block and the conductive block, so that the heating tube is heated, and the seed crystal gradually grows under the conditions of high temperature and high pressure.

[0010] The present invention uses a pressure transmission seal to transmit pressure, a heat preservation tube to keep warm, a conductive heat preservation block to conduct electricity and keep warm, a conductive block to evenly conduct electricity to the end of a heating tube, and a heating tube to heat, thereby providing a high-temperature environment for the growth of a blank. A carbon source layer and a catalyst layer are provided to gradually grow a seed crystal on a crystal bed under high temperature and high pressure conditions to form a blank. A molding cavity is provided to mold the lower part of the blank so that the lower part of the blank is shaped like an inverted pyramid, and the upper part of the blank grows into a pyramid-like shape under suitable temperature and pressure conditions.

[0011] Furthermore, the plurality of molding cavities are evenly distributed in annular shape on the crystal bed, so that one assembly block can be used for the production of a plurality of blanks with similar growth conditions.

[0012] Furthermore, the bottom diameter of the molding cavity is 1-2 mm, the top diameter is 8-12 mm, and the height is 5-7 mm, so that the lower part of the blank can grow into a shape similar to a pyramid.

[0013] Furthermore, the seed hole has a diameter of 1 mm and a depth of 1 mm, so that the lower part of the blank can grow into a shape similar to a pyramid.

[0014] Furthermore, the conductive heat-insulating block comprises a conductive shell, and the conductive shell is filled with heat-insulating material.

[0015] The present invention also provides a rough shaping method for high temperature and high pressure cultured diamonds, based on the above-mentioned assembly block, comprising the following steps:

[0016] S1: placing a seed crystal into the seed crystal hole;

[0017] S2: Assemble the assembly blocks;

[0018] S3: Synthesis using a six-sided top press;

[0019] S4: Dissolve the synthesized column core with nitric acid to obtain a bi-conical diamond rough.

[0020] Further, in step S3, the synthesis pressure is set to 90-100 MPa.

[0021] Further, in step S3, the synthesis temperature is 1350-1400 degrees Celsius.

[0022] Further, in step S3, the synthesis time is 150-300 hours.

[0023] Compared with the prior art, the present invention has the following beneficial effects:

[0024] The assembly block of the present invention cooperates with a six-sided top press to realize the shaping of diamond blanks. The assembly block is installed in the six-sided top press, and two conductive heat-insulating blocks are energized. The pressure is transmitted to the heating tube through the pressure-transmitting seal, the heat-insulating tube and the heating tube. The electricity is transmitted to the heating tube through the conductive heat-insulating block and the conductive block, so that the heating tube is heated. The seed crystal gradually grows under the conditions of high temperature and high pressure. The seed crystal starts to grow from the seed crystal hole at the bottom of the molding cavity. Under the appropriate temperature and pressure, and because the molding cavity is in the shape of an inverted truncated cone, the seed crystal grows in the molding cavity. The blank gradually grows into a shape close to an inverted pyramid. After the blank continues to grow outside the molding cavity, it loses the restriction of the molding cavity. The bottom of the blank outside the molding cavity grows faster, and the top grows slower, so that the shape of the part of the blank outside the molding cavity is close to a pyramid. Finally, the shape of the blank is similar to a double pyramid composed of an inverted pyramid and a pyramid. This double pyramid-like blank can be cut into two naked diamonds, which greatly improves the utilization rate of the blank and the drill rate reaches about 50%-70%. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A cross-sectional view of a rough molding assembly block for high-temperature and high-pressure cultured diamonds in the present invention;

[0026] Figure 2A schematic diagram of cutting and polishing a rough diamond grown using the assembly block of the present invention into a finished diamond;

[0027] Figure 3 This is a schematic diagram of the rough shape of conventional high temperature and high pressure cultured diamonds;

[0028] Figure 4 This is a flow chart of a rough diamond shaping method for high temperature and high pressure cultured diamonds according to the present invention;

[0029] Figure 5 A finished diamond obtained in Example 2;

[0030] Figure 6 is another finished diamond obtained in Example 2;

[0031] Figure 7 This is a photo of the bottom perspective of the diamond rough obtained in Example 3;

[0032] Figure 8 This is a photo of the top view of the diamond rough obtained in Example 3;

[0033] Fig. 9 This is a photo of the finished diamond obtained in Example 3;

[0034] Fig.10 A photograph of the diamond rough obtained in Comparative Example 1 from the top perspective;

[0035] Fig.11 is a photo of the diamond rough obtained in Comparative Example 2;

[0036] In the figure: 1. pressure transmission seal; 2. insulation pipe; 3. conductive insulation block; 4. conductive block; 5. heating pipe; 6. insulation layer; 7. carbon source layer; 8. catalyst layer; 9. crystal bed; 10. molding cavity; 11. seed hole; 12. protrusion. DETAILED DESCRIPTION

[0037] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0038] like Figure 1As shown, this embodiment provides a rough molding assembly block for high-temperature and high-pressure cultured diamonds, including a pressure transmission sealing component, wherein the pressure transmission sealing component has a generation cavity, in which a carbon source layer 7, a catalyst layer 8 and a crystal bed 9 are stacked, wherein the crystal bed 9 is provided with a plurality of inverted frustum-shaped molding cavities 10 on one side facing the catalyst layer 8, a seed hole 11 is provided at the bottom center of the molding cavity 10, and the catalyst layer 8 protrudes toward the crystal bed 9 to form a plurality of protrusions corresponding to the molding cavities 10 one by one, for filling the molding cavities 10.

[0039] The present invention sets a molding cavity 10, and the seed crystal starts to grow from the seed hole 11 at the bottom of the molding cavity 10. Under appropriate temperature and pressure, and because the molding cavity 10 is in the shape of an inverted truncated cone, the seed crystal gradually grows into a blank with a shape close to an inverted pyramid in the molding cavity 10. After the blank continues to grow outside the molding cavity 10, it loses the restriction of the molding cavity 10. The bottom growth time of the portion of the blank outside the molding cavity 10 is longer, and the top growth time is shorter, so that the shape of the portion of the blank outside the molding cavity 10 is close to a pyramid, such as Figure 2 As shown in FIG. 1 , this biconical rough can be cut into two loose diamonds, greatly improving the utilization rate of the rough, and the diamond yield rate reaches about 50%-70%, where the diamond yield rate = finished diamond weight / diamond rough weight × 100%; the shape of the rough of conventional high temperature and high pressure cultured diamond is as follows Figure 3 As shown, generally only one finished diamond can be obtained by cutting and polishing, and the diamond yield is about 30%.

[0040] Specifically, Figure 1 As shown, the pressure transmission sealing assembly includes a pressure transmission seal 1, and the pressure transmission seal 1 includes a synthetic cavity, in which a thermal insulation tube 2 is arranged, in which two conductive thermal insulation blocks 3, two conductive blocks 4 and a heating tube 5 are arranged, the heating tube 5 is located between the two conductive blocks 4, and the two conductive blocks 4 are located between the two conductive thermal insulation blocks 3, and thermal insulation layers 6 are arranged at both ends of the heating tube 5, and the generating cavity is formed between the two thermal insulation layers 6.

[0041] The assembly block of the present invention cooperates with a six-sided top press to realize the shaping of diamond blanks. The assembly block is loaded into the six-sided top press, and two conductive insulation blocks 3 are energized. The pressure is transmitted to the heating tube 5 through the pressure transmission seal 1, the insulation tube 2 and the heating tube 5. The electricity is transmitted to the heating tube 5 through the conductive insulation block 3 and the conductive block 4, so that the heating tube 5 is heated, and the seed crystal gradually grows under the conditions of high temperature and high pressure.

[0042] The present invention uses a pressure transmission seal 1 to transmit pressure, a heat preservation tube 2 to keep warm, a conductive heat preservation block 3 to conduct electricity and keep warm, a conductive block 4 to evenly conduct electricity to the end of a heating tube 5, and a heating tube 5 to heat, thereby providing a high-temperature environment for the growth of the blank. The carbon source layer 7 and the catalyst layer 8 are used to gradually grow the seed crystal on the crystal bed 9 under high temperature and high pressure conditions to form a blank. The molding cavity 10 is used to mold the lower part of the blank so that the lower part of the blank is shaped like an inverted pyramid, and the upper part of the blank grows into a pyramid-like shape under suitable temperature and pressure conditions.

[0043] Furthermore, the plurality of molding cavities 10 are evenly distributed in a ring shape on the crystal bed 9, so that one assembly block can be used for the production of a plurality of blanks with similar growth conditions.

[0044] Furthermore, the bottom diameter of the molding cavity 10 is 1-2 mm, preferably 1.5 mm, the top diameter of the molding cavity 10 is 8-12 mm, preferably 10 mm, and the height of the molding cavity 10 is 5-7 mm, preferably 6 mm, so as to facilitate the growth of the lower part of the blank into a shape similar to a pyramid.

[0045] Furthermore, the seed hole 11 has a diameter of 1 mm and a depth of 1 mm, so that the lower portion of the blank can grow into a shape similar to a pyramid.

[0046] Furthermore, the conductive heat-insulating block 3 comprises a conductive shell, and the conductive shell is filled with heat-insulating material.

[0047] Preferably, the pressure-transmitting seal 1 may be a pyrophyllite block, the side length of the pyrophyllite block may be 84 mm, and a through hole with a diameter of 60 mm is provided in the pyrophyllite block as a synthesis cavity.

[0048] Preferably, the conductive block 4 may be a steel ring, the outer diameter of the steel ring may be 50 mm, and the thickness may be 15 mm.

[0049] Preferably, the heating tube 5 may be a carbon tube, and the dimensions of the carbon tube may be: outer diameter 57 mm, inner diameter 50 mm, height 40 mm; preferably, a barrier tube may also be provided inside the heating tube 5 to separate the heating tube 5 from the carbon source layer 7, the catalyst layer 8 and the crystal bed 9, and the barrier tube may be a ceramic tube to facilitate the heat transfer of the heating tube 5 to the carbon source layer 7, the catalyst layer 8 and the crystal bed 9.

[0050] Preferably, the carbon source layer 7 may be a high-purity carbon sheet, and the diameter of the high-purity carbon sheet may be 50 mm and the thickness may be 10 mm.

[0051] Preferably, the catalyst layer 8 may be an iron-cobalt alloy disc, and the catalyst layer 8 may have a diameter of 50 mm and a thickness of 10 mm.

[0052] Preferably, the material of the crystal bed 9 may be ceramic, for example, the crystal bed 9 may be an alumina disc, the diameter of the crystal bed 9 may be 50 mm, the thickness may be 8 mm, and 10 molding cavities 10 may be opened on the crystal bed 9 .

[0053] like Figure 4 As shown, the present invention also provides a rough shaping method for high temperature and high pressure cultured diamonds, based on the above-mentioned assembly block, comprising the following steps:

[0054] S1: placing a seed crystal into the seed crystal hole 11;

[0055] S2: Assemble the assembly blocks;

[0056] S3: Synthesis using a six-sided top press;

[0057] S4: Dissolve the synthesized column core with nitric acid to obtain a bi-conical diamond rough.

[0058] Further, in step S3, the cylinder diameter of the six-sided top press is preferably 800 mm, and the combined pressure is set to 90-100 MPa, preferably 95 MPa.

[0059] Further, in step S3, the synthesis temperature is 1350-1400 degrees Celsius, and the synthesis temperature is preferably 1380 degrees Celsius.

[0060] Further, in step S3, the synthesis time is 150-300 hours, preferably 160 hours.

[0061] Further, in step S3, the carbon source layer 7 and the catalyst layer 8 are fused to form a column core, and the blank is located in the column core.

[0062] Example 1

[0063] Use Figure 1 The structure shown builds an assembly block, wherein the bottom diameter of the molding cavity 10 is 1.5 mm, the top diameter of the molding cavity 10 is 10 mm, and the height of the molding cavity 10 is 6 mm.

[0064] Based on the above assembly blocks, this embodiment provides a rough shaping method for high temperature and high pressure cultured diamonds, such as Figure 4 As shown, the following steps are included:

[0065] S1: placing a seed crystal into the seed crystal hole 11;

[0066] S2: Assemble the assembly blocks;

[0067] S3: Synthesis using a six-sided top press;

[0068] S4: Dissolve the synthesized column core with nitric acid to obtain a bi-conical diamond rough.

[0069] Further, in step S3, the cylinder diameter of the six-sided top press is 800 mm, and the combined pressure is set to 95 MPa.

[0070] Further, in step S3, the synthesis temperature is about 1350 degrees Celsius.

[0071] Further, in step S3, the synthesis time is 160 hours.

[0072] According to the above method, 10 diamond roughs were obtained, one of which was randomly selected, weighing 3.32 carats. After cutting and polishing, two finished diamonds were obtained, one of which weighed 0.814 carats and the other weighed 0.899 carats. The diamond yield was about 51.6%.

[0073] Example 2

[0074] Based on the same assembly blocks as in Example 1, this embodiment provides a rough shaping method for high temperature and high pressure cultured diamonds, such as Figure 4 As shown, the following steps are included:

[0075] S1: placing a seed crystal into the seed crystal hole 11;

[0076] S2: Assemble the assembly blocks;

[0077] S3: Synthesis using a six-sided top press;

[0078] S4: Dissolve the synthesized column core with nitric acid to obtain a bi-conical diamond rough.

[0079] Further, in step S3, the cylinder diameter of the six-sided top press is 800 mm, and the combined pressure is set to 95 MPa.

[0080] Further, in step S3, the synthesis temperature is about 1380 degrees Celsius.

[0081] Further, in step S3, the synthesis time is 160 hours.

[0082] According to the above method, 10 diamond roughs were obtained. One of them weighing 3.52 carats was randomly selected and cut and polished to obtain the following Figure 8 and Fig. 9 The two polished diamonds shown, one weighs 1.294 carats and the other weighs 1.197 carats, with a diamond yield of approximately 70.8%.

[0083] Example 3

[0084] Based on the same assembly blocks as in Example 1, this embodiment provides a rough shaping method for high temperature and high pressure cultured diamonds, such as Figure 4As shown, the following steps are included:

[0085] S1: placing a seed crystal into the seed crystal hole 11;

[0086] S2: Assemble the assembly blocks;

[0087] S3: Synthesis using a six-sided top press;

[0088] S4: Dissolve the synthesized column core with nitric acid to obtain a bi-conical diamond rough.

[0089] Further, in step S3, the cylinder diameter of the six-sided top press is 800 mm, and the combined pressure is set to 95 MPa.

[0090] Further, in step S3, the synthesis temperature is about 1400 degrees Celsius.

[0091] Further, in step S3, the synthesis time is 160 hours.

[0092] According to the above method, 10 diamond roughs were obtained, and one of them was randomly selected. Figure 7 For this photo of the bottom view of the rough diamond, Figure 8 This is a photo of a rough diamond from the top. The rough diamond weighs 4.8 carats. After cutting and polishing, two diamonds are obtained. Fig. 9 The polished diamonds shown, one weighs 1.15 carats and the other weighs 1.33 carats, with a diamond yield of approximately 51.7%.

[0093] Comparative Example 1

[0094] like Figure 4 As shown, this embodiment provides a rough shaping method for high temperature and high pressure cultured diamond, comprising the following steps:

[0095] S1: placing a seed crystal into the seed crystal hole 11;

[0096] S2: Assemble the assembly blocks;

[0097] S3: Synthesis using a six-sided top press;

[0098] S4: Dissolve the synthesized column core with nitric acid to obtain a bi-conical diamond rough.

[0099] Further, in step S3, the cylinder diameter of the six-sided top press is 800 mm, and the combined pressure is set to 95 MPa.

[0100] Further, in step S3, the synthesis temperature is about 1300 degrees Celsius.

[0101] Further, in step S3, the synthesis time is 150 hours.

[0102] The difference between the assembly block used in this embodiment and the assembly block used in Embodiments 1-3 is that no molding cavity is provided on the crystal bed, and the seed hole is directly provided on the surface of the crystal bed.

[0103] According to the above method, 10 diamond roughs are obtained, and the better one is selected. Fig.10 This is a photo taken from the top perspective of a diamond rough. The diamond rough weighs 3.1 carats. After cutting and polishing, a finished diamond weighs 0.942 carats, with a diamond yield of approximately 30.4%.

[0104] Comparative Example 2

[0105] Based on the same assembly blocks as in Example 1, this embodiment provides a rough shaping method for high temperature and high pressure cultured diamonds, such as Figure 4 As shown, the following steps are included:

[0106] S1: placing a seed crystal into the seed crystal hole 11;

[0107] S2: Assemble the assembly blocks;

[0108] S3: Synthesis using a six-sided top press;

[0109] S4: Dissolve the synthesized column core with nitric acid to obtain a bi-conical diamond rough.

[0110] Further, in step S3, the cylinder diameter of the six-sided top press is 800 mm, and the combined pressure is set to 95 MPa.

[0111] Further, in step S3, the synthesis temperature is about 1300 degrees Celsius.

[0112] Further, in step S3, the synthesis time is 160 hours.

[0113] According to the above method, 10 diamond roughs were obtained. Fig.11 As shown, a better one is selected. The rough diamond weighs 3.3 carats. After cutting and polishing, a finished diamond weighs 1.013 carats, and the diamond yield is about 30.7%.

[0114] Based on Examples 1-3 and Comparative Example 1, by opening a molding cavity on the crystal bed and synthesizing under appropriate conditions, a diamond rough with a diamond yield of 50%-70% can be obtained, which is a significant improvement over the diamond rough synthesized by the conventional high temperature and high pressure method. It can be seen from Comparative Example 2 that although a molding cavity is opened on the crystal bed, if the cultivation conditions are not appropriate, such as too low a temperature, only irregularly shaped diamond roughs can be obtained, and the diamond yield is about 30%.

[0115] It should be noted that although the present invention is disclosed as above by specific embodiments, the above embodiments are not intended to limit the present invention. Ordinary technicians in this field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the scope defined in the claims.

Claims

1. A rough molding assembly block for high temperature and high pressure cultured diamonds, characterized in that: It includes a pressure transmission sealing component, which has a generation cavity, in which a carbon source layer, a catalyst layer and a crystal bed are stacked, wherein a plurality of inverted frustum-shaped molding cavities are opened on one side of the crystal bed facing the catalyst layer, a seed hole is opened at the center of the bottom of the molding cavity, and the catalyst layer protrudes toward the crystal bed to form a plurality of protrusions corresponding to the molding cavities one by one for filling the molding cavities.

2. The rough forming assembly block for high temperature and high pressure cultured diamond according to claim 1, characterized in that: The pressure transmission sealing assembly includes a pressure transmission sealing member, and the pressure transmission sealing member includes a synthesis cavity, in which a heat preservation pipe is arranged, in which two conductive heat preservation blocks, two conductive blocks and a heating pipe are arranged, the heating pipe is located between the two conductive blocks, and the two conductive blocks are located between the two conductive heat preservation blocks, and heat preservation layers are arranged at both ends of the heating pipe, and the generation cavity is formed between the two heat preservation layers.

3. The rough shaping assembly block for high temperature and high pressure cultured diamond according to claim 1, characterized in that: The plurality of molding cavities are evenly distributed on the crystal bed in an annular shape.

4. The rough shaping assembly block for high-temperature and high-pressure cultured diamond according to claim 1, characterized in that: The bottom diameter of the molding cavity is 1-2 mm, the top diameter is 8-12 mm, and the height is 5-7 mm.

5. The rough shaping assembly block for high-temperature and high-pressure cultured diamond according to claim 1, characterized in that: The seed hole has a diameter of 1 mm and a depth of 1 mm.

6. The rough shaping assembly block for high-temperature and high-pressure cultured diamond according to claim 2, characterized in that: The conductive heat-insulating block comprises a conductive shell, and the conductive shell is filled with heat-insulating material.

7. A rough shaping method for high temperature and high pressure cultured diamonds, based on any assembly block in claims 1-6, characterized in that: The following steps are involved: S1: placing a seed crystal into the seed crystal hole; S2: Assemble the assembly blocks; S3: Synthesis using a six-sided top press; S4: Dissolve the synthesized column core with nitric acid to obtain a bi-conical diamond rough.

8. The rough diamond shaping method of high temperature and high pressure cultured diamond according to claim 7, characterized in that: In step S3, the synthesis pressure is set to 90-100 MPa.

9. The rough shaping method of high temperature and high pressure cultured diamond according to claim 7, characterized in that: In step S3, the synthesis temperature is 1350-1400 degrees Celsius.

10. The rough diamond shaping method of high temperature and high pressure cultured diamond according to claim 7, characterized in that: In step S3, the synthesis time is 150-300 hours.

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