A growth carrier for mercury cadmium telluride materials

Abstract

The present application discloses a mercury cadmium telluride material growth carrier, including: a base support unit, which is provided with four through holes for screw fixing, combined with a card, used to clamp the base plate and the substrate, and fixed with screws; a card groove is provided at the position of the card, and a through hole is provided on the card groove for placing the card; a base plate unit, which is a circular material with a diameter smaller than the base support diameter, is placed in the base plate groove, and the base plate unit is embedded in the base support unit; a card unit is provided with a long through hole for adjusting the position of the substrate. The mercury cadmium telluride material growth carrier provided in the embodiment of the present application has a simple substrate carrier structure, is easy to process, and is easy to operate. The embedded base plate has good thermal conductivity and temperature uniformity. At the same time, no additional fixing device is required, which reduces damage to the substrate and effectively improves the material yield.

Description

Technical Field

[0001] The present application relates to the field of infrared detection materials, and in particular to a mercury cadmium telluride material growth carrier. Background Art

[0002] The mercury cadmium telluride material used in focal plane detectors involves epitaxial growth technology, among which molecular beam epitaxy can achieve large-size, high-quality mercury cadmium telluride material epitaxy.

[0003] In molecular beam epitaxy technology, the way to fix (or bond) the substrate is one of the key technologies. On the one hand, during the material growth process, there are multiple high-temperature treatments in multiple steps, including sample chamber pretreatment, buffer chamber pretreatment, chamber pretreatment, secondary buffer layer growth, and extremely high temperature uniformity requirements during the growth of mercury cadmium telluride materials. The design and processing of the fixture will affect the radiation or heat transfer of the sample surface. On the other hand, the fixture that fixes the substrate is required to be simple to operate and easy to install and remove.

[0004] In view of this, how to provide a HgCdTe growth carrier that meets the demand for precise temperature control in the growth of HgCdTe materials while avoiding the risk of cavity contamination caused by the bonding substrate and the occurrence of uneven heating during the material growth process when the temperature changes has become a technical problem that urgently needs to be solved. Summary of the invention

[0005] The embodiment of the present application provides a mercury cadmium telluride growth carrier, which is used to solve the problem that the current substrate fixing fixture is inconvenient to install and remove, and also causes uneven heating when the temperature changes, which seriously affects the surface thickness and component uniformity of the material after epitaxy.

[0006] In a first aspect of an embodiment of the present application, a mercury cadmium telluride material growth carrier is provided, comprising:

[0007] The bottom bracket unit is provided with four through holes for screw fixing, and is combined with a card to clamp the bottom plate and the substrate and fix them with screws; a card groove is provided at the position of the card, and a through hole is provided on the card groove for placing the card;

[0008] The bottom plate unit is a circular material with a diameter smaller than that of the bottom bracket, and is placed in the bottom plate groove. The bottom plate unit is embedded in the bottom bracket unit;

[0009] The card unit is provided with a long through hole for adjusting the position of the substrate.

[0010] In an optional embodiment, the base unit is a circular structure, and has clips at equal intervals on its edge for fitting onto the manipulator.

[0011] In an optional embodiment, the base support unit is provided with a base plate groove on the front side for cooperating with and fixing the base plate, wherein the diameter of the base plate groove is larger than the diameter of the base plate, and the sum of the base plate thickness and the substrate thickness is the same as the depth of the slot reserved in the base support unit.

[0012] The present application provides a mercury cadmium telluride material growth carrier, including: a base unit, which is provided with four through holes for screw fixing, combined with a card, used to clamp the base plate and the substrate, and fixed with screws; a card groove is provided at the position of the card, and the card groove is provided with a through hole for placing the card; a base plate unit, which is a circular material with a diameter smaller than the base diameter, is placed in the base plate groove, and the base plate unit is embedded in the base unit; a card unit, which is provided with a long through hole for adjusting the position of the substrate.

[0013] The mercury cadmium telluride material growth carrier provided in the embodiment of the present application has a simple substrate carrier structure, is easy to process, and is easy to operate. The embedded base plate has good thermal conductivity and temperature uniformity. At the same time, no additional fixing device is required, which reduces damage to the substrate and effectively improves the material yield.

[0014] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, which can be implemented in accordance with the contents of the specification, and in order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present application. Also, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0016] Figure 1 A three-dimensional diagram of the assembly of a mercury cadmium telluride material growth carrier provided in an embodiment of the present application;

[0017] Figure 2 A front perspective view of a bottom support unit of a mercury cadmium telluride material growth carrier provided in an embodiment of the present application;

[0018] Figure 3 A three-dimensional diagram of a card unit of a mercury cadmium telluride material growth carrier provided in an embodiment of the present application;

[0019] Figure 4 A three-dimensional diagram of a bottom plate unit of a mercury cadmium telluride material growth carrier provided in an embodiment of the present application;

[0020] Figure 5A three-dimensional diagram of a screw of a mercury cadmium telluride material growth carrier provided in an embodiment of the present application;

[0021] Figure 6 A three-dimensional diagram of a nut of a mercury cadmium telluride material growth carrier provided in an embodiment of the present application;

[0022] Figure 7 A three-dimensional diagram of a silicon substrate for molecular beam epitaxial growth of a mercury cadmium telluride material growth carrier provided in an embodiment of the present application. DETAILED DESCRIPTION

[0023] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0024] The present application provides a substrate carrier used in a thin film epitaxial process, and is particularly directed to a carrier used when growing silicon-based mercury cadmium telluride materials using a molecular beam epitaxy method. The carrier can provide a fully covered temperature zone for the growth of silicon-based mercury cadmium telluride materials, and the temperature is stable and controllable. Through research, pyrolytic graphite is selected as a base material, and the base material can ensure temperature stability and will not deform or corrode due to long-term high temperature, and can be used for a long time and multiple times.

[0025] See also Figure 1 , Figure 1 This is a stereogram of an assembly of a mercury cadmium telluride material growth carrier provided in an embodiment of the present application. Figure 1 As shown, the HgCdTe material growth carrier includes three parts: a base unit, a base plate unit and a card unit.

[0026] Specifically, the bottom bracket unit is provided with four through holes for screw fixing, combined with a card, used to clamp the bottom plate and the substrate, and fixed with screws; the position of the card is provided with a card groove, and the card groove is provided with a through hole for placing the card, see Figure 2 .

[0027] The bottom plate unit is a circular material with a diameter smaller than the bottom bracket diameter, which is placed in the bottom plate groove, and the bottom plate unit is embedded in the bottom bracket unit. Figure 4 .

[0028] Card unit, provided with a long through hole for adjusting the position of the substrate, see Figure 3 .

[0029] In the embodiment of the present application, the base unit is a circular structure, and has clips at equal intervals on its edge for fitting onto the manipulator.

[0030] In an embodiment of the present application, the bottom support unit is provided with a bottom plate groove on the front side for cooperating with and fixing the bottom plate, wherein the diameter of the bottom plate groove is larger than the diameter of the bottom plate, and the sum of the bottom plate thickness and the substrate thickness is the same as the depth of the slot reserved in the bottom support unit.

[0031] In actual applications, the base part is a circular structure, with four clips on the edge every 90° for fitting on the manipulator; there is a circular groove on the front with a diameter slightly larger than the base plate and a depth of 1.5 mm, which is used to fit and fix the base plate; the card position on the base is designed with a 0.2 mm deep groove with a through hole on it.

[0032] The base plate is directly placed in the 1.5mm deep groove designed on the base; the base plate is completely embedded in the base, and its thickness plus the silicon substrate is the same as the depth of the card slot reserved in the base, and it will not protrude to affect the loading and unloading process; the card is used in conjunction with the base, one side of which has a long notch for clamping the substrate, and the center has a long through hole. This design can make the installation and transfer of the substrate more convenient, and at the same time can improve the repeatability and reliability of the substrate installation, so that it will not move or even fall or slide during use.

[0033] There are 4 through holes for screw fixing on the base, and a card is designed to clamp the base plate and the silicon substrate, and fix them with screws and nuts. There are long through holes on the card to facilitate position adjustment. Figure 5 ; See the nut schematic diagram Figure 6 .

[0034] The bottom plate is a round material with a diameter slightly smaller than the bottom support, the surface of the material is smooth, and it is in direct contact with the silicon substrate.

[0035] In order to facilitate operation and reduce the possibility of damage to the substrate caused by redundant parts, the card is directly placed in the designed groove on the base and matched with the base. The base plate is fixed with screws to make the base plate fit tightly against the back of the substrate, which can fix the substrate and keep the substrate temperature consistent.

[0036] The number and size of placed substrates can be changed by deforming the carrier provided in the embodiment of the present application.

[0037] In the embodiment of the present application, the thickness of the base and the bottom plate of the carrier are designed to match the thickness of the substrate so that they can fit better and are more conducive to heat transfer.

[0038] All parts of the carrier except the base plate are made of high-purity molybdenum material that is resistant to high temperatures, has good thermal conductivity and corrosion resistance. The base plate is made of high-purity pyrolytic graphite, which has good corrosion resistance and machining performance, medium strength and hardness, and reduces plasticity, making it particularly suitable for use as a base plate.

[0039] The outer dimensions of the base and the bottom plate can be changed according to actual needs to adapt to the needs of different substrate materials and sizes.

[0040] For ease of understanding, an embodiment of the present invention is given below. In the embodiment, a silicon substrate is used as an example. The substrate size is 3 inches. The steps of the method are as follows:

[0041] Step 1: Place the carrier after standard cleaning into the equipment sample chamber for degassing at 180°C for 2 hours. At this time, there is no silicon substrate placed in the carrier;

[0042] Step 2: After the temperature drops to room temperature, transfer it to the equipment growth chamber and degas again at 900℃ for 1 hour, and then transfer it back to the equipment injection chamber after cooling down;

[0043] Step 3: Use polytetrafluoroethylene tweezers to take out the cleaned substrate from the MOS-II grade anhydrous ethanol, dry it in an ultra-clean environment or blow it dry with a nitrogen gun, and then place it in a substrate box;

[0044] Step 4: Place the substrate and sample in a glove box connected to the equipment injection chamber;

[0045] Step 5: In the glove box, use an Allen wrench to loosen the four screws so that the card can move backwards. Use a vacuum pen with a rubber head to place the silicon substrate in the substrate box onto the bottom bracket of the carrier in the equipment sample chamber, and place it in the center of the bottom plate. Use a card to clamp the silicon substrate, tighten the screws, and complete the loading without shaking the substrate.

[0046] Step 6: After confirmation, transfer the carrier to the equipment sample chamber for growth;

[0047] Step 7: After the growth is completed, take out the substrate carrier, and the carrier needs to be degassed again at high temperature before the next use.

[0048] See also Figure 7 , Figure 7 A three-dimensional image of a silicon substrate used for molecular beam epitaxial growth.

[0049] In summary, according to the design of the patent of the present invention, high-purity molybdenum and pyrolytic graphite are used as processing materials, which have ultra-high physical and chemical stability while having good mechanical strength and excellent thermal conductivity; the adopted design has the characteristics of easy installation and removal.

[0050] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0051] The preferred embodiments of this specification disclosed above are only used to help explain this specification. The optional embodiments do not describe all the details in detail, nor do they limit the invention to only the specific implementation methods described. Obviously, many modifications and changes can be made according to the content of the embodiments of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the embodiments of this specification, so that technicians in the relevant technical field can well understand and use this specification. This specification is only limited by the claims and their full scope and equivalents.

Claims

1. A mercury cadmium telluride material growth carrier, characterized in that: include: The bottom bracket unit is provided with four through holes for screw fixing, and is combined with a card to clamp the bottom plate and the substrate and fix them with screws; a card groove is provided at the position of the card, and a through hole is provided on the card groove for placing the card; The bottom plate unit is a circular material with a diameter smaller than that of the bottom bracket, and is placed in the bottom plate groove. The bottom plate unit is embedded in the bottom bracket unit; The card unit is provided with a long through hole for adjusting the position of the substrate.

2. The mercury cadmium telluride growth carrier according to claim 1, characterized in that: The bottom bracket unit is a circular structure, and has clamping angles at equal intervals arranged on the edge to match the manipulator.

3. The mercury cadmium telluride growth carrier according to claim 1, characterized in that: The bottom bracket unit is provided with a bottom plate groove on the front side for cooperating with and fixing the bottom plate, wherein the diameter of the bottom plate groove is larger than the diameter of the bottom plate, and the sum of the bottom plate thickness and the substrate thickness is the same as the depth of the slot reserved in the bottom bracket unit.

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